JP2015519477A - 事前に安定させたプラズマによるプロセスのためのスパッタリング方法 - Google Patents

事前に安定させたプラズマによるプロセスのためのスパッタリング方法 Download PDF

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Publication number
JP2015519477A
JP2015519477A JP2015514366A JP2015514366A JP2015519477A JP 2015519477 A JP2015519477 A JP 2015519477A JP 2015514366 A JP2015514366 A JP 2015514366A JP 2015514366 A JP2015514366 A JP 2015514366A JP 2015519477 A JP2015519477 A JP 2015519477A
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Japan
Prior art keywords
substrate
deposition
plasma
magnet assembly
target
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JP2015514366A
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Japanese (ja)
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JP2015519477A5 (enExample
Inventor
ジョン ダグラス ブッシュ，
ジョン ダグラス ブッシュ，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2015519477A publication Critical patent/JP2015519477A/ja
Publication of JP2015519477A5 publication Critical patent/JP2015519477A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2015514366A 2012-06-01 2012-06-01 事前に安定させたプラズマによるプロセスのためのスパッタリング方法 Pending JP2015519477A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/060410 WO2013178288A1 (en) 2012-06-01 2012-06-01 Method for sputtering for processes with a pre-stabilized plasma

Publications (2)

Publication Number Publication Date
JP2015519477A true JP2015519477A (ja) 2015-07-09
JP2015519477A5 JP2015519477A5 (enExample) 2015-08-20

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JP2015514366A Pending JP2015519477A (ja) 2012-06-01 2012-06-01 事前に安定させたプラズマによるプロセスのためのスパッタリング方法

Country Status (7)

Country Link
US (1) US20150136585A1 (enExample)
EP (1) EP2855727A1 (enExample)
JP (1) JP2015519477A (enExample)
KR (1) KR20150016983A (enExample)
CN (2) CN104136652A (enExample)
TW (1) TW201402851A (enExample)
WO (1) WO2013178288A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019094548A (ja) * 2017-11-27 2019-06-20 株式会社アルバック スパッタ装置
JP2020503436A (ja) * 2016-12-19 2020-01-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スパッタ堆積源、スパッタ堆積装置、及び基板上に層を堆積させる方法
JP2020019990A (ja) * 2018-07-31 2020-02-06 キヤノントッキ株式会社 成膜装置、および、電子デバイスの製造方法
KR20200014167A (ko) 2018-07-31 2020-02-10 캐논 톡키 가부시키가이샤 성막 장치 및 전자 디바이스의 제조 방법
CN115747741A (zh) * 2022-11-17 2023-03-07 深圳市华星光电半导体显示技术有限公司 溅射镀膜设备
JP2023033718A (ja) * 2021-08-30 2023-03-13 株式会社アルバック 成膜方法及び成膜装置

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TWI500796B (zh) * 2014-03-14 2015-09-21 中國鋼鐵股份有限公司 鈍化層之製造方法
WO2015139739A1 (en) * 2014-03-18 2015-09-24 Applied Materials, Inc. Process gas segmentation for static reactive sputter processes
WO2015158391A1 (en) * 2014-04-17 2015-10-22 Applied Materials, Inc. Edge uniformity improvement in pvd array coaters
WO2016050284A1 (en) * 2014-09-30 2016-04-07 Applied Materials, Inc. Cathode sputtering mode
TWI567213B (zh) * 2015-07-08 2017-01-21 精曜科技股份有限公司 鍍膜載台及鍍膜裝置
WO2017032404A1 (en) * 2015-08-24 2017-03-02 Applied Materials, Inc. Apparatus for vacuum sputter deposition and method therefor
CN108138314A (zh) * 2015-09-21 2018-06-08 应用材料公司 基板载体、以及溅射沉积设备和其使用方法
KR102637922B1 (ko) * 2016-03-10 2024-02-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 안정화 방법 및 이를 이용한 증착 방법
JP6886020B2 (ja) * 2016-11-15 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 移動基板の完全プラズマ被覆のための動的フェーズドアレイプラズマ源
WO2019001682A1 (en) * 2017-06-26 2019-01-03 Applied Materials, Inc. DISPLACEABLE MASKING MEMBER
EP3684962B1 (en) * 2017-09-20 2021-10-06 C4E Technology GmbH Method and device for carrying out a deposition process at the outer side and/or at the inner side of a body
JP7097740B2 (ja) * 2018-04-24 2022-07-08 東京エレクトロン株式会社 成膜装置および成膜方法
CN215163072U (zh) * 2018-06-27 2021-12-14 应用材料公司 沉积设备和沉积系统
CN109487225A (zh) * 2019-01-07 2019-03-19 成都中电熊猫显示科技有限公司 磁控溅射成膜装置及方法
US20230097276A1 (en) * 2020-03-13 2023-03-30 Evatec Ag Apparatus and process with a dc-pulsed cathode array
CN111334861A (zh) * 2020-04-03 2020-06-26 哈尔滨科友半导体产业装备与技术研究院有限公司 一种用于制备PVT法AlN籽晶的化学气相沉积外延装置及方法
KR102900823B1 (ko) * 2020-06-03 2025-12-15 어플라이드 머티어리얼스, 인코포레이티드 증착 장치, 프로세싱 시스템 및 광전자 디바이스의 층을 제조하는 방법
CN116195027B (zh) * 2020-10-01 2025-11-04 应用材料公司 在基板上沉积材料的方法、被配置为能够连接到用于沉积材料的系统的控制器、和用于沉积材料的系统
CN113061857B (zh) * 2021-03-12 2023-01-13 浙江艾微普科技有限公司 一种离子辅助、倾斜溅射、反应溅射沉积薄膜的方法及设备

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JP2008069402A (ja) * 2006-09-13 2008-03-27 Shincron:Kk スパッタリング装置及びスパッタリング方法
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WO2010116560A1 (ja) * 2009-03-30 2010-10-14 キヤノンアネルバ株式会社 半導体装置の製造方法及びスパッタ装置
JP5563377B2 (ja) * 2009-12-22 2014-07-30 キヤノンアネルバ株式会社 スパッタリング装置

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Publication number Priority date Publication date Assignee Title
JP2007077493A (ja) * 2005-09-15 2007-03-29 Applied Materials Gmbh & Co Kg コーティング機及びコーティング機の動作方法
JP2008069402A (ja) * 2006-09-13 2008-03-27 Shincron:Kk スパッタリング装置及びスパッタリング方法
WO2010051282A1 (en) * 2008-10-27 2010-05-06 University Of Toledo Low-temperature pulsed dc reactive sputtering deposition of thin films from metal targets
JP2013064171A (ja) * 2011-09-15 2013-04-11 Ulvac Japan Ltd スパッタリング装置、成膜方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020503436A (ja) * 2016-12-19 2020-01-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スパッタ堆積源、スパッタ堆積装置、及び基板上に層を堆積させる方法
JP2019094548A (ja) * 2017-11-27 2019-06-20 株式会社アルバック スパッタ装置
JP6999380B2 (ja) 2017-11-27 2022-01-18 株式会社アルバック スパッタ装置
JP2020019990A (ja) * 2018-07-31 2020-02-06 キヤノントッキ株式会社 成膜装置、および、電子デバイスの製造方法
KR20200014169A (ko) 2018-07-31 2020-02-10 캐논 톡키 가부시키가이샤 성막 장치 및 전자 디바이스의 제조 방법
KR20200014167A (ko) 2018-07-31 2020-02-10 캐논 톡키 가부시키가이샤 성막 장치 및 전자 디바이스의 제조 방법
JP7158098B2 (ja) 2018-07-31 2022-10-21 キヤノントッキ株式会社 成膜装置、および、電子デバイスの製造方法
KR102659918B1 (ko) 2018-07-31 2024-04-22 캐논 톡키 가부시키가이샤 성막 장치 및 전자 디바이스의 제조 방법
JP2023033718A (ja) * 2021-08-30 2023-03-13 株式会社アルバック 成膜方法及び成膜装置
JP7672921B2 (ja) 2021-08-30 2025-05-08 株式会社アルバック 成膜方法及び成膜装置
CN115747741A (zh) * 2022-11-17 2023-03-07 深圳市华星光电半导体显示技术有限公司 溅射镀膜设备

Also Published As

Publication number Publication date
CN108914076A (zh) 2018-11-30
WO2013178288A1 (en) 2013-12-05
US20150136585A1 (en) 2015-05-21
KR20150016983A (ko) 2015-02-13
CN104136652A (zh) 2014-11-05
EP2855727A1 (en) 2015-04-08
TW201402851A (zh) 2014-01-16

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