KR20150016983A - 사전 안정화된 플라즈마를 이용하는 프로세스들을 위한 스퍼터링을 위한 방법 - Google Patents

사전 안정화된 플라즈마를 이용하는 프로세스들을 위한 스퍼터링을 위한 방법 Download PDF

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KR20150016983A
KR20150016983A KR1020147036842A KR20147036842A KR20150016983A KR 20150016983 A KR20150016983 A KR 20150016983A KR 1020147036842 A KR1020147036842 A KR 1020147036842A KR 20147036842 A KR20147036842 A KR 20147036842A KR 20150016983 A KR20150016983 A KR 20150016983A
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South Korea
Prior art keywords
substrate
deposition
plasma
depositing
layer
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KR1020147036842A
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Korean (ko)
Inventor
존 더글라스 부시
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20150016983A publication Critical patent/KR20150016983A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147036842A 2012-06-01 2012-06-01 사전 안정화된 플라즈마를 이용하는 프로세스들을 위한 스퍼터링을 위한 방법 Ceased KR20150016983A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/060410 WO2013178288A1 (en) 2012-06-01 2012-06-01 Method for sputtering for processes with a pre-stabilized plasma

Publications (1)

Publication Number Publication Date
KR20150016983A true KR20150016983A (ko) 2015-02-13

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KR1020147036842A Ceased KR20150016983A (ko) 2012-06-01 2012-06-01 사전 안정화된 플라즈마를 이용하는 프로세스들을 위한 스퍼터링을 위한 방법

Country Status (7)

Country Link
US (1) US20150136585A1 (enExample)
EP (1) EP2855727A1 (enExample)
JP (1) JP2015519477A (enExample)
KR (1) KR20150016983A (enExample)
CN (2) CN108914076A (enExample)
TW (1) TW201402851A (enExample)
WO (1) WO2013178288A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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KR20190072676A (ko) * 2016-11-15 2019-06-25 어플라이드 머티어리얼스, 인코포레이티드 이동하는 기판의 완전한 플라즈마 커버리지를 위한 동적 단계적 어레이 플라즈마 소스
KR20190094223A (ko) * 2016-12-19 2019-08-12 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 증착 소스, 스퍼터 증착 장치, 및 기판 상에 층을 증착하는 방법
KR20200020868A (ko) * 2017-06-26 2020-02-26 어플라이드 머티어리얼스, 인코포레이티드 이동가능 마스킹 엘리먼트

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TWI500796B (zh) * 2014-03-14 2015-09-21 China Steel Corp 鈍化層之製造方法
CN106103787B (zh) * 2014-03-18 2019-06-28 应用材料公司 用于静态反应溅射的工艺气体分段
KR102005540B1 (ko) * 2014-04-17 2019-07-30 어플라이드 머티어리얼스, 인코포레이티드 Pvd 어레이 코팅기들에서의 에지 균일성 개선
WO2016050284A1 (en) * 2014-09-30 2016-04-07 Applied Materials, Inc. Cathode sputtering mode
TWI567213B (zh) * 2015-07-08 2017-01-21 精曜科技股份有限公司 鍍膜載台及鍍膜裝置
CN107924802A (zh) * 2015-08-24 2018-04-17 应用材料公司 用于真空溅射沉积的设备及其方法
CN108138314A (zh) * 2015-09-21 2018-06-08 应用材料公司 基板载体、以及溅射沉积设备和其使用方法
KR102637922B1 (ko) * 2016-03-10 2024-02-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 안정화 방법 및 이를 이용한 증착 방법
EP3684962B1 (en) * 2017-09-20 2021-10-06 C4E Technology GmbH Method and device for carrying out a deposition process at the outer side and/or at the inner side of a body
JP6999380B2 (ja) * 2017-11-27 2022-01-18 株式会社アルバック スパッタ装置
JP7097740B2 (ja) * 2018-04-24 2022-07-08 東京エレクトロン株式会社 成膜装置および成膜方法
WO2020001762A1 (en) * 2018-06-27 2020-01-02 Applied Materials, Inc. Deposition apparatus, deposition system, and method of depositing a seed layer
JP7328744B2 (ja) 2018-07-31 2023-08-17 キヤノントッキ株式会社 成膜装置、および、電子デバイスの製造方法
JP7158098B2 (ja) * 2018-07-31 2022-10-21 キヤノントッキ株式会社 成膜装置、および、電子デバイスの製造方法
CN109487225A (zh) * 2019-01-07 2019-03-19 成都中电熊猫显示科技有限公司 磁控溅射成膜装置及方法
KR20220153636A (ko) * 2020-03-13 2022-11-18 에바텍 아크티엔게젤샤프트 Dc 펄스 캐소드 어레이를 사용한 장치 및 공정
CN111334861A (zh) * 2020-04-03 2020-06-26 哈尔滨科友半导体产业装备与技术研究院有限公司 一种用于制备PVT法AlN籽晶的化学气相沉积外延装置及方法
CN115885057B (zh) * 2020-06-03 2025-09-16 应用材料公司 沉积设备、处理系统以及制造光电装置层的方法
WO2022069050A1 (en) * 2020-10-01 2022-04-07 Applied Materials, Inc. Method of depositing a material on a substrate
CN113061857B (zh) * 2021-03-12 2023-01-13 浙江艾微普科技有限公司 一种离子辅助、倾斜溅射、反应溅射沉积薄膜的方法及设备
JP7672921B2 (ja) * 2021-08-30 2025-05-08 株式会社アルバック 成膜方法及び成膜装置
CN115747741A (zh) * 2022-11-17 2023-03-07 深圳市华星光电半导体显示技术有限公司 溅射镀膜设备

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WO2010116560A1 (ja) * 2009-03-30 2010-10-14 キヤノンアネルバ株式会社 半導体装置の製造方法及びスパッタ装置
JP5563377B2 (ja) * 2009-12-22 2014-07-30 キヤノンアネルバ株式会社 スパッタリング装置
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KR20190072676A (ko) * 2016-11-15 2019-06-25 어플라이드 머티어리얼스, 인코포레이티드 이동하는 기판의 완전한 플라즈마 커버리지를 위한 동적 단계적 어레이 플라즈마 소스
US11948783B2 (en) 2016-11-15 2024-04-02 Applied Materials, Inc. Dynamic phased array plasma source for complete plasma coverage of a moving substrate
KR20190094223A (ko) * 2016-12-19 2019-08-12 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 증착 소스, 스퍼터 증착 장치, 및 기판 상에 층을 증착하는 방법
KR20200020868A (ko) * 2017-06-26 2020-02-26 어플라이드 머티어리얼스, 인코포레이티드 이동가능 마스킹 엘리먼트

Also Published As

Publication number Publication date
TW201402851A (zh) 2014-01-16
JP2015519477A (ja) 2015-07-09
CN108914076A (zh) 2018-11-30
US20150136585A1 (en) 2015-05-21
WO2013178288A1 (en) 2013-12-05
CN104136652A (zh) 2014-11-05
EP2855727A1 (en) 2015-04-08

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