CN108914076A - 利用预稳定等离子体的工艺的溅镀方法 - Google Patents
利用预稳定等离子体的工艺的溅镀方法 Download PDFInfo
- Publication number
- CN108914076A CN108914076A CN201810771113.XA CN201810771113A CN108914076A CN 108914076 A CN108914076 A CN 108914076A CN 201810771113 A CN201810771113 A CN 201810771113A CN 108914076 A CN108914076 A CN 108914076A
- Authority
- CN
- China
- Prior art keywords
- substrate
- plasma
- deposition
- magnetic assembly
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 100
- 238000004544 sputter deposition Methods 0.000 title abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 206
- 238000000151 deposition Methods 0.000 claims abstract description 155
- 230000008021 deposition Effects 0.000 claims abstract description 135
- 239000000463 material Substances 0.000 claims abstract description 86
- 230000003068 static effect Effects 0.000 claims abstract description 31
- 239000013077 target material Substances 0.000 claims abstract description 11
- 238000005137 deposition process Methods 0.000 claims description 40
- 238000005477 sputtering target Methods 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 238000007560 sedimentation technique Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 120
- 239000007789 gas Substances 0.000 description 12
- 230000006641 stabilisation Effects 0.000 description 11
- 238000011105 stabilization Methods 0.000 description 11
- 238000000429 assembly Methods 0.000 description 10
- 230000000712 assembly Effects 0.000 description 10
- 238000005546 reactive sputtering Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 230000003750 conditioning effect Effects 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910016909 AlxOy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810771113.XA CN108914076A (zh) | 2012-06-01 | 2012-06-01 | 利用预稳定等离子体的工艺的溅镀方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201280070347.2A CN104136652A (zh) | 2012-06-01 | 2012-06-01 | 利用预稳定等离子体的工艺的溅镀方法 |
| PCT/EP2012/060410 WO2013178288A1 (en) | 2012-06-01 | 2012-06-01 | Method for sputtering for processes with a pre-stabilized plasma |
| CN201810771113.XA CN108914076A (zh) | 2012-06-01 | 2012-06-01 | 利用预稳定等离子体的工艺的溅镀方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280070347.2A Division CN104136652A (zh) | 2012-06-01 | 2012-06-01 | 利用预稳定等离子体的工艺的溅镀方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108914076A true CN108914076A (zh) | 2018-11-30 |
Family
ID=46320903
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810771113.XA Pending CN108914076A (zh) | 2012-06-01 | 2012-06-01 | 利用预稳定等离子体的工艺的溅镀方法 |
| CN201280070347.2A Pending CN104136652A (zh) | 2012-06-01 | 2012-06-01 | 利用预稳定等离子体的工艺的溅镀方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280070347.2A Pending CN104136652A (zh) | 2012-06-01 | 2012-06-01 | 利用预稳定等离子体的工艺的溅镀方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20150136585A1 (enExample) |
| EP (1) | EP2855727A1 (enExample) |
| JP (1) | JP2015519477A (enExample) |
| KR (1) | KR20150016983A (enExample) |
| CN (2) | CN108914076A (enExample) |
| TW (1) | TW201402851A (enExample) |
| WO (1) | WO2013178288A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111334861A (zh) * | 2020-04-03 | 2020-06-26 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种用于制备PVT法AlN籽晶的化学气相沉积外延装置及方法 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI500796B (zh) * | 2014-03-14 | 2015-09-21 | China Steel Corp | 鈍化層之製造方法 |
| JP6535685B2 (ja) * | 2014-03-18 | 2019-06-26 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 静的反応性スパッタ処理のための処理ガスセグメンテーション |
| KR102005540B1 (ko) * | 2014-04-17 | 2019-07-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Pvd 어레이 코팅기들에서의 에지 균일성 개선 |
| WO2016050284A1 (en) * | 2014-09-30 | 2016-04-07 | Applied Materials, Inc. | Cathode sputtering mode |
| TWI567213B (zh) * | 2015-07-08 | 2017-01-21 | 精曜科技股份有限公司 | 鍍膜載台及鍍膜裝置 |
| WO2017032404A1 (en) * | 2015-08-24 | 2017-03-02 | Applied Materials, Inc. | Apparatus for vacuum sputter deposition and method therefor |
| CN108138314A (zh) * | 2015-09-21 | 2018-06-08 | 应用材料公司 | 基板载体、以及溅射沉积设备和其使用方法 |
| KR102637922B1 (ko) * | 2016-03-10 | 2024-02-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 안정화 방법 및 이를 이용한 증착 방법 |
| JP6886020B2 (ja) * | 2016-11-15 | 2021-06-16 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 移動基板の完全プラズマ被覆のための動的フェーズドアレイプラズマ源 |
| JP6966552B2 (ja) * | 2016-12-19 | 2021-11-17 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | スパッタ堆積源、スパッタ堆積装置、及び基板上に層を堆積させる方法 |
| WO2019001682A1 (en) * | 2017-06-26 | 2019-01-03 | Applied Materials, Inc. | DISPLACEABLE MASKING MEMBER |
| EP3684962B1 (en) * | 2017-09-20 | 2021-10-06 | C4E Technology GmbH | Method and device for carrying out a deposition process at the outer side and/or at the inner side of a body |
| JP6999380B2 (ja) * | 2017-11-27 | 2022-01-18 | 株式会社アルバック | スパッタ装置 |
| JP7097740B2 (ja) * | 2018-04-24 | 2022-07-08 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| WO2020001762A1 (en) * | 2018-06-27 | 2020-01-02 | Applied Materials, Inc. | Deposition apparatus, deposition system, and method of depositing a seed layer |
| JP7158098B2 (ja) | 2018-07-31 | 2022-10-21 | キヤノントッキ株式会社 | 成膜装置、および、電子デバイスの製造方法 |
| JP7328744B2 (ja) | 2018-07-31 | 2023-08-17 | キヤノントッキ株式会社 | 成膜装置、および、電子デバイスの製造方法 |
| CN109487225A (zh) * | 2019-01-07 | 2019-03-19 | 成都中电熊猫显示科技有限公司 | 磁控溅射成膜装置及方法 |
| CN115210846A (zh) * | 2020-03-13 | 2022-10-18 | 瑞士艾发科技 | 采用直流脉冲阴极阵列的设备和方法 |
| CN115885057B (zh) * | 2020-06-03 | 2025-09-16 | 应用材料公司 | 沉积设备、处理系统以及制造光电装置层的方法 |
| CN116195027B (zh) * | 2020-10-01 | 2025-11-04 | 应用材料公司 | 在基板上沉积材料的方法、被配置为能够连接到用于沉积材料的系统的控制器、和用于沉积材料的系统 |
| CN113061857B (zh) * | 2021-03-12 | 2023-01-13 | 浙江艾微普科技有限公司 | 一种离子辅助、倾斜溅射、反应溅射沉积薄膜的方法及设备 |
| JP7672921B2 (ja) * | 2021-08-30 | 2025-05-08 | 株式会社アルバック | 成膜方法及び成膜装置 |
| CN115747741A (zh) * | 2022-11-17 | 2023-03-07 | 深圳市华星光电半导体显示技术有限公司 | 溅射镀膜设备 |
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- 2012-06-01 CN CN201810771113.XA patent/CN108914076A/zh active Pending
- 2012-06-01 US US14/374,184 patent/US20150136585A1/en not_active Abandoned
- 2012-06-01 WO PCT/EP2012/060410 patent/WO2013178288A1/en not_active Ceased
- 2012-06-01 EP EP12728428.9A patent/EP2855727A1/en not_active Withdrawn
- 2012-06-01 JP JP2015514366A patent/JP2015519477A/ja active Pending
- 2012-06-01 CN CN201280070347.2A patent/CN104136652A/zh active Pending
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| CN1932072A (zh) * | 2005-09-15 | 2007-03-21 | 应用薄膜有限责任与两合公司 | 喷涂机和操作喷涂机的方法 |
| US20090178919A1 (en) * | 2008-01-16 | 2009-07-16 | Applied Materials, Inc. | Sputter coating device |
| WO2010051282A1 (en) * | 2008-10-27 | 2010-05-06 | University Of Toledo | Low-temperature pulsed dc reactive sputtering deposition of thin films from metal targets |
| US20100326818A1 (en) * | 2009-03-30 | 2010-12-30 | Canon Anelva Corporation | Method of manufacturing semiconductor device and sputtering apparatus |
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| CN111334861A (zh) * | 2020-04-03 | 2020-06-26 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种用于制备PVT法AlN籽晶的化学气相沉积外延装置及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150016983A (ko) | 2015-02-13 |
| EP2855727A1 (en) | 2015-04-08 |
| TW201402851A (zh) | 2014-01-16 |
| WO2013178288A1 (en) | 2013-12-05 |
| CN104136652A (zh) | 2014-11-05 |
| US20150136585A1 (en) | 2015-05-21 |
| JP2015519477A (ja) | 2015-07-09 |
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