JP2015518245A5 - - Google Patents
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- JP2015518245A5 JP2015518245A5 JP2015504841A JP2015504841A JP2015518245A5 JP 2015518245 A5 JP2015518245 A5 JP 2015518245A5 JP 2015504841 A JP2015504841 A JP 2015504841A JP 2015504841 A JP2015504841 A JP 2015504841A JP 2015518245 A5 JP2015518245 A5 JP 2015518245A5
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- tip
- thin film
- needle
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210107766.0 | 2012-04-13 | ||
| CN201210107766.0A CN102629538B (zh) | 2012-04-13 | 2012-04-13 | 具有低逸出功和高化学稳定性的电极材料 |
| PCT/CN2012/087966 WO2013152613A1 (zh) | 2012-04-13 | 2012-12-31 | 具有低逸出功和高化学稳定性的电极材料 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015518245A JP2015518245A (ja) | 2015-06-25 |
| JP2015518245A5 true JP2015518245A5 (enExample) | 2017-09-28 |
| JP6458727B2 JP6458727B2 (ja) | 2019-01-30 |
Family
ID=46587777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015504841A Expired - Fee Related JP6458727B2 (ja) | 2012-04-13 | 2012-12-31 | 低仕事関数及び高い化学的安定性を備えた電極材料 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9812279B2 (enExample) |
| EP (1) | EP2787522B1 (enExample) |
| JP (1) | JP6458727B2 (enExample) |
| CN (1) | CN102629538B (enExample) |
| WO (1) | WO2013152613A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629538B (zh) | 2012-04-13 | 2014-03-19 | 吴江炀晟阴极材料有限公司 | 具有低逸出功和高化学稳定性的电极材料 |
| JP6459135B2 (ja) * | 2015-03-02 | 2019-01-30 | 国立研究開発法人物質・材料研究機構 | エミッタの製造方法 |
| JP2016207319A (ja) * | 2015-04-17 | 2016-12-08 | 株式会社日立ハイテクノロジーズ | 電界放出型電子源及びその製造方法 |
| CN104880579B (zh) * | 2015-06-02 | 2019-02-12 | 苏州明志金科仪器有限公司 | 超高真空自旋极化扫描隧道显微镜探针的制备方法和装置 |
| US10083812B1 (en) * | 2015-12-04 | 2018-09-25 | Applied Physics Technologies, Inc. | Thermionic-enhanced field emission electron source composed of transition metal carbide material with sharp emitter end-form |
| JP6529920B2 (ja) | 2016-03-01 | 2019-06-12 | 株式会社日立ハイテクノロジーズ | 電界放出電子源、その製造方法および電子線装置 |
| US10545258B2 (en) * | 2016-03-24 | 2020-01-28 | Schlumberger Technology Corporation | Charged particle emitter assembly for radiation generator |
| US9984846B2 (en) * | 2016-06-30 | 2018-05-29 | Kla-Tencor Corporation | High brightness boron-containing electron beam emitters for use in a vacuum environment |
| US10784071B2 (en) * | 2016-08-08 | 2020-09-22 | Asml Netherlands B.V. | Electron emitter and method of fabricating same |
| KR102374925B1 (ko) * | 2016-09-06 | 2022-03-16 | 주식회사 히타치하이테크 | 전자원 및 전자선 조사 장치 |
| JP6694515B2 (ja) | 2016-10-13 | 2020-05-13 | 株式会社日立ハイテク | 電子線装置 |
| CN106783460A (zh) * | 2017-01-05 | 2017-05-31 | 武汉科技大学 | 一种低逸出功阴极 |
| WO2019107113A1 (ja) * | 2017-11-29 | 2019-06-06 | 国立研究開発法人物質・材料研究機構 | エミッタ、それを用いた電子銃、それを用いた電子機器、および、その製造方法 |
| CN111048383B (zh) * | 2018-10-12 | 2021-01-15 | 中国电子科技集团公司第三十八研究所 | 电子源和电子枪 |
| CN111048372B (zh) * | 2018-10-12 | 2021-04-27 | 中国电子科技集团公司第三十八研究所 | 一种电子源工作方法 |
| CN111048373B (zh) * | 2018-10-12 | 2021-04-27 | 中国电子科技集团公司第三十八研究所 | 一种电子源再生方法 |
| CN111048382B (zh) * | 2018-10-12 | 2021-03-23 | 中国电子科技集团公司第三十八研究所 | 电子源制造方法 |
| EP3948962A4 (en) * | 2019-04-05 | 2023-01-04 | Modern Electron, Inc. | THERMIONIC ENERGY CONVERTER WITH HEAT CONCENTRATED HOT SLEEV |
| GB2583359A (en) * | 2019-04-25 | 2020-10-28 | Aquasium Tech Limited | Electron beam emitting assembly |
| US12081145B2 (en) | 2019-10-09 | 2024-09-03 | Modern Hydrogen, Inc. | Time-dependent plasma systems and methods for thermionic conversion |
| US11948769B2 (en) | 2022-01-12 | 2024-04-02 | Applied Physics Technologies, Inc. | Monolithic heater for thermionic electron cathode |
| TWI856768B (zh) * | 2023-08-07 | 2024-09-21 | 埃爾思科技股份有限公司 | 半導體製程線上電子束檢測方法及應用於半導體製程線上電子束檢測設備之具有奈米級凸出結構的冷場發電子源發射極及其製法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3374386A (en) | 1964-11-02 | 1968-03-19 | Field Emission Corp | Field emission cathode having tungsten miller indices 100 plane coated with zirconium, hafnium or magnesium on oxygen binder |
| GB1210007A (en) * | 1968-07-05 | 1970-10-28 | Mullard Ltd | Cathode |
| US3817592A (en) | 1972-09-29 | 1974-06-18 | Linfield Res Inst | Method for reproducibly fabricating and using stable thermal-field emission cathodes |
| JPS5617780B2 (enExample) * | 1973-03-26 | 1981-04-24 | ||
| JPS53114660A (en) * | 1977-03-16 | 1978-10-06 | Jeol Ltd | Cathode for thermal electron emission |
| US4137476A (en) * | 1977-05-18 | 1979-01-30 | Denki Kagaku Kogyo Kabushiki Kaisha | Thermionic cathode |
| JPS5588233A (en) * | 1978-12-26 | 1980-07-03 | Denki Kagaku Kogyo Kk | Hexaboride single crystal cathode |
| JPS57128436A (en) * | 1981-02-02 | 1982-08-10 | Koichi Kanetani | Manufacture of lanthanum-boride thermionic emission electrode |
| US4468586A (en) * | 1981-05-26 | 1984-08-28 | International Business Machines Corporation | Shaped electron emission from single crystal lanthanum hexaboride with intensity distribution |
| JPS5971232A (ja) * | 1982-10-14 | 1984-04-21 | Natl Inst For Res In Inorg Mater | 表面酸化型炭化物フィールドエミッターの製造法 |
| US6190579B1 (en) * | 1997-09-08 | 2001-02-20 | Integrated Thermal Sciences, Inc. | Electron emission materials and components |
| JP2000021290A (ja) * | 1998-07-03 | 2000-01-21 | Canon Inc | 電子放出素子、電子源、画像形成装置及びそれらの製造方法 |
| US6680562B1 (en) | 1999-08-20 | 2004-01-20 | Fei Company | Schottky emitter having extended life |
| US6387717B1 (en) * | 2000-04-26 | 2002-05-14 | Micron Technology, Inc. | Field emission tips and methods for fabricating the same |
| JP3996774B2 (ja) | 2002-01-09 | 2007-10-24 | 株式会社日立ハイテクノロジーズ | パターン欠陥検査方法及びパターン欠陥検査装置 |
| US7431856B2 (en) | 2005-05-18 | 2008-10-07 | National Research Council Of Canada | Nano-tip fabrication by spatially controlled etching |
| CN100372047C (zh) * | 2005-09-09 | 2008-02-27 | 清华大学 | 一种薄膜场发射显示器件及其场发射阴极的制备方法 |
| US7888654B2 (en) * | 2007-01-24 | 2011-02-15 | Fei Company | Cold field emitter |
| JP2009146705A (ja) * | 2007-12-13 | 2009-07-02 | Sumitomo Electric Ind Ltd | 電子放出素子、電子源、電子線装置、及び電子放出素子の製造方法 |
| CN102394204B (zh) * | 2008-03-19 | 2014-10-08 | 清华大学 | 场发射电子源 |
| JP2010157490A (ja) * | 2008-12-02 | 2010-07-15 | Canon Inc | 電子放出素子および該電子放出素子を用いた表示パネル |
| JP5660564B2 (ja) * | 2009-04-20 | 2015-01-28 | 独立行政法人物質・材料研究機構 | 希土類六ホウ化物冷陰極電界放出型電子源 |
| CN102629538B (zh) * | 2012-04-13 | 2014-03-19 | 吴江炀晟阴极材料有限公司 | 具有低逸出功和高化学稳定性的电极材料 |
-
2012
- 2012-04-13 CN CN201210107766.0A patent/CN102629538B/zh active Active
- 2012-12-31 US US14/386,884 patent/US9812279B2/en active Active - Reinstated
- 2012-12-31 WO PCT/CN2012/087966 patent/WO2013152613A1/zh not_active Ceased
- 2012-12-31 JP JP2015504841A patent/JP6458727B2/ja not_active Expired - Fee Related
- 2012-12-31 EP EP12874231.9A patent/EP2787522B1/en active Active
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