JP2015506641A5 - - Google Patents

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Publication number
JP2015506641A5
JP2015506641A5 JP2014553838A JP2014553838A JP2015506641A5 JP 2015506641 A5 JP2015506641 A5 JP 2015506641A5 JP 2014553838 A JP2014553838 A JP 2014553838A JP 2014553838 A JP2014553838 A JP 2014553838A JP 2015506641 A5 JP2015506641 A5 JP 2015506641A5
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JP
Japan
Prior art keywords
layer
electrode layer
transducer
dielectric film
patterning
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Application number
JP2014553838A
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English (en)
Japanese (ja)
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JP6190387B2 (ja
JP2015506641A (ja
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Priority claimed from PCT/IB2013/050572 external-priority patent/WO2013111063A1/en
Publication of JP2015506641A publication Critical patent/JP2015506641A/ja
Publication of JP2015506641A5 publication Critical patent/JP2015506641A5/ja
Application granted granted Critical
Publication of JP6190387B2 publication Critical patent/JP6190387B2/ja
Active legal-status Critical Current
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JP2014553838A 2012-01-27 2013-01-23 容量型微細加工トランスデューサ及びその製造方法 Active JP6190387B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261591308P 2012-01-27 2012-01-27
US61/591,308 2012-01-27
PCT/IB2013/050572 WO2013111063A1 (en) 2012-01-27 2013-01-23 Capacitive micro-machined transducer and method of manufacturing the same

Publications (3)

Publication Number Publication Date
JP2015506641A JP2015506641A (ja) 2015-03-02
JP2015506641A5 true JP2015506641A5 (cg-RX-API-DMAC7.html) 2016-03-10
JP6190387B2 JP6190387B2 (ja) 2017-08-30

Family

ID=47884432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014553838A Active JP6190387B2 (ja) 2012-01-27 2013-01-23 容量型微細加工トランスデューサ及びその製造方法

Country Status (8)

Country Link
US (1) US9828236B2 (cg-RX-API-DMAC7.html)
EP (1) EP2806983B1 (cg-RX-API-DMAC7.html)
JP (1) JP6190387B2 (cg-RX-API-DMAC7.html)
CN (1) CN104066520A (cg-RX-API-DMAC7.html)
BR (1) BR112014018080A8 (cg-RX-API-DMAC7.html)
MX (1) MX2014008852A (cg-RX-API-DMAC7.html)
RU (1) RU2627062C2 (cg-RX-API-DMAC7.html)
WO (1) WO2013111063A1 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5578810B2 (ja) * 2009-06-19 2014-08-27 キヤノン株式会社 静電容量型の電気機械変換装置
JP6416232B2 (ja) * 2013-09-24 2018-10-31 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Cmutデバイス製造方法、cmutデバイス、及び装置
JP6882890B2 (ja) * 2013-11-18 2021-06-02 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. 超音波トランスデューサアセンブリ
KR20160006494A (ko) * 2014-07-09 2016-01-19 삼성전자주식회사 와이어 본딩을 이용한 정전용량 미세가공 초음파 변환기 프로브
EP3316791B1 (en) 2015-07-02 2020-08-05 Koninklijke Philips N.V. Multi-mode capacitive micromachined ultrasound transducer and associated devices and systems
WO2018115226A1 (en) 2016-12-22 2018-06-28 Koninklijke Philips N.V. Systems and methods of operation of capacitive radio frequency micro-electromechanical switches
CA3098911A1 (en) * 2018-05-03 2019-11-07 Butterfly Network, Inc. Pressure port for ultrasonic transducer on cmos sensor
KR20210013152A (ko) 2018-05-24 2021-02-03 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 정전 용량 센서
CN109665488B (zh) * 2018-12-29 2024-07-19 杭州士兰集成电路有限公司 Mems器件及其制造方法
WO2020163595A1 (en) * 2019-02-07 2020-08-13 Butterfly Network, Inc Bi-layer metal electrode for micromachined ultrasonic transducer devices
US11684951B2 (en) 2019-08-08 2023-06-27 Bfly Operations, Inc. Micromachined ultrasonic transducer devices having truncated circle shaped cavities

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US20050177045A1 (en) * 2004-02-06 2005-08-11 Georgia Tech Research Corporation cMUT devices and fabrication methods
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
CN101223633A (zh) * 2005-05-18 2008-07-16 科隆科技公司 穿过晶片的互连
KR100648860B1 (ko) * 2005-09-08 2006-11-24 주식회사 하이닉스반도체 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
JP4961260B2 (ja) * 2007-05-16 2012-06-27 株式会社日立製作所 半導体装置
US20080315331A1 (en) * 2007-06-25 2008-12-25 Robert Gideon Wodnicki Ultrasound system with through via interconnect structure
US8203912B2 (en) * 2007-07-31 2012-06-19 Koninklijke Philips Electronics N.V. CMUTs with a high-k dielectric
CA2695454C (en) * 2007-08-23 2016-09-20 Purdue Research Foundation Intra-ocular pressure sensor
US10092270B2 (en) * 2007-09-17 2018-10-09 Koninklijke Philips Electronics N.V. Pre-collapsed CMUT with mechanical collapse retention
US8821794B2 (en) * 2008-03-31 2014-09-02 Nxp, B.V. Sensor chip and method of manufacturing the same
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
US9132693B2 (en) 2008-09-16 2015-09-15 Koninklijke Philps N.V. Capacitive micromachine ultrasound transducer
FR2939003B1 (fr) 2008-11-21 2011-02-25 Commissariat Energie Atomique Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules
JP2011054708A (ja) * 2009-09-01 2011-03-17 Elpida Memory Inc 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム
JP5355777B2 (ja) * 2010-03-12 2013-11-27 株式会社日立メディコ 超音波トランスデューサおよびそれを用いた超音波診断装置
US8530322B2 (en) * 2010-12-16 2013-09-10 Intermolecular, Inc. Method of forming stacked metal oxide layers
US20120228773A1 (en) * 2011-03-08 2012-09-13 International Business Machines Corporation Large-grain, low-resistivity tungsten on a conductive compound
US8794075B2 (en) * 2011-08-11 2014-08-05 Nxp, B.V. Multilayered NONON membrane in a MEMS sensor

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