JP2015506641A5 - - Google Patents
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- Publication number
- JP2015506641A5 JP2015506641A5 JP2014553838A JP2014553838A JP2015506641A5 JP 2015506641 A5 JP2015506641 A5 JP 2015506641A5 JP 2014553838 A JP2014553838 A JP 2014553838A JP 2014553838 A JP2014553838 A JP 2014553838A JP 2015506641 A5 JP2015506641 A5 JP 2015506641A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- transducer
- dielectric film
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 9
- 238000000059 patterning Methods 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 7
- 239000004020 conductor Substances 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 claims 1
- 241000877463 Lanio Species 0.000 claims 1
- 229910004121 SrRuO Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261591308P | 2012-01-27 | 2012-01-27 | |
| US61/591,308 | 2012-01-27 | ||
| PCT/IB2013/050572 WO2013111063A1 (en) | 2012-01-27 | 2013-01-23 | Capacitive micro-machined transducer and method of manufacturing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015506641A JP2015506641A (ja) | 2015-03-02 |
| JP2015506641A5 true JP2015506641A5 (OSRAM) | 2016-03-10 |
| JP6190387B2 JP6190387B2 (ja) | 2017-08-30 |
Family
ID=47884432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014553838A Active JP6190387B2 (ja) | 2012-01-27 | 2013-01-23 | 容量型微細加工トランスデューサ及びその製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9828236B2 (OSRAM) |
| EP (1) | EP2806983B1 (OSRAM) |
| JP (1) | JP6190387B2 (OSRAM) |
| CN (1) | CN104066520A (OSRAM) |
| BR (1) | BR112014018080A8 (OSRAM) |
| MX (1) | MX2014008852A (OSRAM) |
| RU (1) | RU2627062C2 (OSRAM) |
| WO (1) | WO2013111063A1 (OSRAM) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5578810B2 (ja) * | 2009-06-19 | 2014-08-27 | キヤノン株式会社 | 静電容量型の電気機械変換装置 |
| EP3049194B1 (en) * | 2013-09-24 | 2022-06-29 | Koninklijke Philips N.V. | Cmut device manufacturing method, cmut device and apparatus |
| JP6882890B2 (ja) * | 2013-11-18 | 2021-06-02 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 超音波トランスデューサアセンブリ |
| KR20160006494A (ko) * | 2014-07-09 | 2016-01-19 | 삼성전자주식회사 | 와이어 본딩을 이용한 정전용량 미세가공 초음파 변환기 프로브 |
| CN107735032B (zh) | 2015-07-02 | 2021-09-21 | 皇家飞利浦有限公司 | 多模式电容式微加工超声换能器以及相关联的设备、系统和方法 |
| EP3559972B1 (en) | 2016-12-22 | 2025-10-15 | Koninklijke Philips N.V. | Systems and methods of operation of capacitive radio frequency micro-electromechanical switches |
| AU2019263404A1 (en) * | 2018-05-03 | 2020-11-19 | Butterfly Network, Inc. | Pressure port for ultrasonic transducer on CMOS sensor |
| KR20210013152A (ko) | 2018-05-24 | 2021-02-03 | 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 | 정전 용량 센서 |
| CN109665488B (zh) * | 2018-12-29 | 2024-07-19 | 杭州士兰集成电路有限公司 | Mems器件及其制造方法 |
| TW202045099A (zh) * | 2019-02-07 | 2020-12-16 | 美商蝴蝶網路公司 | 用於微加工超音波傳感器裝置的雙層金屬電極 |
| US11684951B2 (en) | 2019-08-08 | 2023-06-27 | Bfly Operations, Inc. | Micromachined ultrasonic transducer devices having truncated circle shaped cavities |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050177045A1 (en) * | 2004-02-06 | 2005-08-11 | Georgia Tech Research Corporation | cMUT devices and fabrication methods |
| US7172947B2 (en) * | 2004-08-31 | 2007-02-06 | Micron Technology, Inc | High dielectric constant transition metal oxide materials |
| CA2607885A1 (en) * | 2005-05-18 | 2006-11-23 | Kolo Technologies, Inc. | Through-wafer interconnection |
| KR100648860B1 (ko) | 2005-09-08 | 2006-11-24 | 주식회사 하이닉스반도체 | 유전막 및 그 형성방법과, 상기 유전막을 구비한 반도체메모리 소자 및 그 제조방법 |
| JP4724505B2 (ja) * | 2005-09-09 | 2011-07-13 | 株式会社日立製作所 | 超音波探触子およびその製造方法 |
| JP4961260B2 (ja) * | 2007-05-16 | 2012-06-27 | 株式会社日立製作所 | 半導体装置 |
| US20080315331A1 (en) * | 2007-06-25 | 2008-12-25 | Robert Gideon Wodnicki | Ultrasound system with through via interconnect structure |
| CN101772383B (zh) * | 2007-07-31 | 2011-11-02 | 皇家飞利浦电子股份有限公司 | 具有高k电介质的cmut |
| WO2009026499A1 (en) * | 2007-08-23 | 2009-02-26 | Purdue Research Foundation | Intra-occular pressure sensor |
| EP2263078B1 (en) * | 2008-03-31 | 2015-05-13 | Nxp B.V. | A sensor chip and a method of manufacturing the same |
| JP5305993B2 (ja) * | 2008-05-02 | 2013-10-02 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子 |
| EP2326432A2 (en) | 2008-09-16 | 2011-06-01 | Koninklijke Philips Electronics N.V. | Capacitive micromachined ultrasound transducer |
| FR2939003B1 (fr) | 2008-11-21 | 2011-02-25 | Commissariat Energie Atomique | Cellule cmut formee d'une membrane de nano-tubes ou de nano-fils ou de nano-poutres et dispositif d'imagerie acoustique ultra haute frequence comprenant une pluralite de telles cellules |
| EP2400893B1 (en) * | 2009-02-27 | 2017-01-04 | Koninklijke Philips N.V. | Pre-collapsed cmut with mechanical collapse retention |
| JP2011054708A (ja) | 2009-09-01 | 2011-03-17 | Elpida Memory Inc | 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム |
| US8617078B2 (en) * | 2010-03-12 | 2013-12-31 | Hitachi Medical Corporation | Ultrasonic transducer and ultrasonic diagnostic device using same |
| US8530322B2 (en) * | 2010-12-16 | 2013-09-10 | Intermolecular, Inc. | Method of forming stacked metal oxide layers |
| US20120228773A1 (en) * | 2011-03-08 | 2012-09-13 | International Business Machines Corporation | Large-grain, low-resistivity tungsten on a conductive compound |
| US8794075B2 (en) * | 2011-08-11 | 2014-08-05 | Nxp, B.V. | Multilayered NONON membrane in a MEMS sensor |
-
2013
- 2013-01-23 RU RU2014134901A patent/RU2627062C2/ru not_active IP Right Cessation
- 2013-01-23 WO PCT/IB2013/050572 patent/WO2013111063A1/en not_active Ceased
- 2013-01-23 US US14/370,110 patent/US9828236B2/en active Active
- 2013-01-23 CN CN201380006571.XA patent/CN104066520A/zh active Pending
- 2013-01-23 MX MX2014008852A patent/MX2014008852A/es unknown
- 2013-01-23 BR BR112014018080A patent/BR112014018080A8/pt not_active IP Right Cessation
- 2013-01-23 JP JP2014553838A patent/JP6190387B2/ja active Active
- 2013-01-23 EP EP13709546.9A patent/EP2806983B1/en active Active
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