JP2010541246A5 - - Google Patents

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Publication number
JP2010541246A5
JP2010541246A5 JP2010526985A JP2010526985A JP2010541246A5 JP 2010541246 A5 JP2010541246 A5 JP 2010541246A5 JP 2010526985 A JP2010526985 A JP 2010526985A JP 2010526985 A JP2010526985 A JP 2010526985A JP 2010541246 A5 JP2010541246 A5 JP 2010541246A5
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JP
Japan
Prior art keywords
pillars
material layer
electrode
forming
phase change
Prior art date
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Application number
JP2010526985A
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English (en)
Japanese (ja)
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JP2010541246A (ja
JP5429644B2 (ja
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Publication date
Priority claimed from US11/864,246 external-priority patent/US7811851B2/en
Application filed filed Critical
Publication of JP2010541246A publication Critical patent/JP2010541246A/ja
Publication of JP2010541246A5 publication Critical patent/JP2010541246A5/ja
Application granted granted Critical
Publication of JP5429644B2 publication Critical patent/JP5429644B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010526985A 2007-09-28 2008-08-08 相変化メモリ構造 Active JP5429644B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/864,246 US7811851B2 (en) 2007-09-28 2007-09-28 Phase change memory structures
US11/864,246 2007-09-28
PCT/US2008/072547 WO2009045635A2 (en) 2007-09-28 2008-08-08 Phase change memory structures

Publications (3)

Publication Number Publication Date
JP2010541246A JP2010541246A (ja) 2010-12-24
JP2010541246A5 true JP2010541246A5 (OSRAM) 2011-09-22
JP5429644B2 JP5429644B2 (ja) 2014-02-26

Family

ID=40507136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526985A Active JP5429644B2 (ja) 2007-09-28 2008-08-08 相変化メモリ構造

Country Status (4)

Country Link
US (2) US7811851B2 (OSRAM)
JP (1) JP5429644B2 (OSRAM)
TW (1) TWI487156B (OSRAM)
WO (1) WO2009045635A2 (OSRAM)

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FR2664018B1 (fr) 1990-06-29 1993-08-13 Gen Electric Systeme de vanne de derivation.
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US8043888B2 (en) 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
US8563355B2 (en) * 2008-01-18 2013-10-22 Freescale Semiconductor, Inc. Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US8637847B2 (en) 2011-12-09 2014-01-28 Micron Technology, Inc. Memory cells having a plurality of heaters
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CN103378288B (zh) * 2012-04-28 2015-01-21 中芯国际集成电路制造(上海)有限公司 相变存储器的形成方法
US8951892B2 (en) * 2012-06-29 2015-02-10 Freescale Semiconductor, Inc. Applications for nanopillar structures
US10937961B2 (en) 2018-11-06 2021-03-02 International Business Machines Corporation Structure and method to form bi-layer composite phase-change-memory cell
US20240237560A1 (en) * 2023-01-06 2024-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Phase-change memory device with tapered thermal transfer layer

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