JP2015503849A - 選択的な領域粗化による制御されたled光出力 - Google Patents
選択的な領域粗化による制御されたled光出力 Download PDFInfo
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- JP2015503849A JP2015503849A JP2014550792A JP2014550792A JP2015503849A JP 2015503849 A JP2015503849 A JP 2015503849A JP 2014550792 A JP2014550792 A JP 2014550792A JP 2014550792 A JP2014550792 A JP 2014550792A JP 2015503849 A JP2015503849 A JP 2015503849A
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- 238000007788 roughening Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 59
- 230000008569 process Effects 0.000 claims abstract description 37
- 238000005530 etching Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000010329 laser etching Methods 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims 2
- 238000000605 extraction Methods 0.000 abstract description 32
- 238000000206 photolithography Methods 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910003923 SiC 4 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
Claims (15)
- 第1の領域を持つ定義された発光面を通して光を発するように構成された発光素子を生成するステップと、
前記定義された発光面において1つ以上の選択領域を特定するステップであって、前記選択領域は前記第1の領域よりも小さな第2の領域を占有するステップと、
前記第2の領域において粗化された領域を、及び前記第1の領域の残りに対応する第3の領域において粗化されていない領域を生成するように、前記発光面を変質させるステップと、
を有する方法。 - 前記特定するステップは、前記選択領域を定義するマスク材料を適用するステップを有する、請求項1に記載の方法。
- 前記マスク材料を適用するステップは、光リソグラフィ工程を含む、請求項2に記載の方法。
- 前記発光素子は、前記第2の表面領域から第1の光出力レベルで光を発し、前記第3の表面領域から前記第1の光出力レベルよりも小さな第2の光出力レベルで光を発する、請求項1に記載の方法。
- 前記第1の光出力レベルは、前記第2の光出力レベルの略2倍である、請求項4に記載の方法。
- 前記選択領域は、識別可能な光学的効果をもたらすようにパターニングされる、請求項1に記載の方法。
- 前記変質させるステップは、前記選択領域の少なくとも1つを、別の前記選択領域の粗さの度合いとは異なる粗さの度合いにまで粗化するステップを含む、請求項1に記載の方法。
- 前記変質させるステップは化学エッチングを含む、請求項1に記載の方法。
- 前記化学エッチングは光電子化学エッチングを含む、請求項8に記載の方法。
- 前記変質させるステップはレーザエッチングを含む、請求項1に記載の方法。
- 第1の表面領域を持つ発光面を通して光を発するように構成された発光構造と、
前記第1の表面領域よりも小さな第2の表面領域において粗化され、第3の表面領域においては粗化されていない、発光面と、
を有する、発光素子。 - 前記第2の表面領域は、識別可能な光学的効果をもたらすようにパターニングされた、請求項11に記載の発光素子。
- 前記発光素子は、前記第2の表面領域から第1の光出力レベルで光を発し、前記第3の表面領域から前記第1の光出力レベルよりも小さな第2の光出力レベルで光を発する、請求項11に記載の発光素子。
- 前記第1の光出力レベルは、前記第2の光出力レベルの略2倍である、請求項13に記載の発光素子。
- 前記第2の表面領域は複数の選択領域を含み、前記選択領域の少なくとも1つは、別の前記選択領域の粗さの度合いとは異なる粗さの度合いにまで粗化された、請求項11に記載の発光素子。
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US201261584836P | 2012-01-10 | 2012-01-10 | |
US61/584,836 | 2012-01-10 | ||
PCT/IB2013/050055 WO2013105004A1 (en) | 2012-01-10 | 2013-01-03 | Controlled led light output by selective area roughening |
Publications (2)
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JP2015503849A true JP2015503849A (ja) | 2015-02-02 |
JP6535465B2 JP6535465B2 (ja) | 2019-06-26 |
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JP2014550792A Active JP6535465B2 (ja) | 2012-01-10 | 2013-01-03 | 選択的な領域粗化による制御されたled光出力 |
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Country | Link |
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US (2) | US10074772B2 (ja) |
EP (1) | EP2803093B1 (ja) |
JP (1) | JP6535465B2 (ja) |
KR (2) | KR20140117515A (ja) |
CN (2) | CN104040734B (ja) |
TW (2) | TWI646704B (ja) |
WO (1) | WO2013105004A1 (ja) |
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DE102014201885A1 (de) * | 2014-02-03 | 2015-08-06 | Johnson Controls Automotive Electronics Gmbh | Abdeckscheibe für mindestens ein Anzeigeinstrument in einem Fahrzeug |
KR101630799B1 (ko) * | 2014-11-12 | 2016-06-16 | 주식회사 레이토피아 | 발광 소자 및 그의 제조방법 |
Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030119218A1 (en) * | 2001-12-20 | 2003-06-26 | Lg Electronics Inc. | Light emitting device and manufacturing method thereof |
US20050023549A1 (en) * | 2003-08-01 | 2005-02-03 | Gardner Nathan F. | Semiconductor light emitting devices |
JP2005150261A (ja) * | 2003-11-12 | 2005-06-09 | Matsushita Electric Works Ltd | 多重反射防止構造を備えた発光素子とその製造方法 |
JP2006191103A (ja) * | 2005-01-03 | 2006-07-20 | Samsung Electro Mech Co Ltd | 窒化物半導体発光素子 |
JP2007150304A (ja) * | 2005-11-24 | 2007-06-14 | Samsung Electro Mech Co Ltd | 垂直構造の窒化ガリウム系発光ダイオード素子 |
JP2007165515A (ja) * | 2005-12-13 | 2007-06-28 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP2007521641A (ja) * | 2003-12-09 | 2007-08-02 | ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | 表面粗化による高効率の(B,Al,Ga,In)Nベースの発光ダイオード |
WO2007094490A1 (ja) * | 2006-02-16 | 2007-08-23 | Sumitomo Chemical Company, Limited | 3族窒化物半導体発光素子及びその製造方法 |
JP2007273975A (ja) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
JP2008066557A (ja) * | 2006-09-08 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
US20080102549A1 (en) * | 2006-10-31 | 2008-05-01 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor light emitting device |
WO2009084670A1 (ja) * | 2007-12-28 | 2009-07-09 | Nichia Corporation | 半導体発光素子およびその製造方法 |
WO2009084325A1 (ja) * | 2007-12-28 | 2009-07-09 | Mitsubishi Chemical Corporation | Led素子およびled素子の製造方法 |
US20100044732A1 (en) * | 2008-08-20 | 2010-02-25 | Au Optronics Corporation | Light Emitting Diode Structure and Method of Forming the Same |
JP2010056459A (ja) * | 2008-08-29 | 2010-03-11 | Kyocera Corp | 発光素子の製造方法 |
US20100151602A1 (en) * | 2008-12-17 | 2010-06-17 | Palo Alto Research Center Incorporated | Laser roughening to improve led emissions |
JP2011066453A (ja) * | 2010-12-27 | 2011-03-31 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
JP2011066048A (ja) * | 2009-09-15 | 2011-03-31 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子 |
US20110114966A1 (en) * | 2009-11-06 | 2011-05-19 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Light emitting diode device |
JP2011100829A (ja) * | 2009-11-05 | 2011-05-19 | Toshiba Corp | 半導体発光装置の製造方法および半導体発光装置 |
JP2011526083A (ja) * | 2008-06-27 | 2011-09-29 | ブリッジラックス インコーポレイテッド | 発光ダイオードにおいて使用するための表面にテクスチャが施されたカプセル |
US20110266518A1 (en) * | 2010-04-28 | 2011-11-03 | Lg Innotek Co., Ltd. | Light Emitting Device, Light Emitting Device Package, and Lighting System |
US20110300337A1 (en) * | 2010-06-08 | 2011-12-08 | Chuan-Cheng Tu | Substrate for light-emitting diode |
JP2012195321A (ja) * | 2011-03-14 | 2012-10-11 | Toshiba Corp | 半導体発光素子 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0738146A (ja) * | 1993-07-20 | 1995-02-07 | Victor Co Of Japan Ltd | 半導体発光装置 |
US7102175B2 (en) * | 2003-04-15 | 2006-09-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and method for fabricating the same |
KR100649494B1 (ko) | 2004-08-17 | 2006-11-24 | 삼성전기주식회사 | 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드 |
US7256483B2 (en) | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
JP2006253298A (ja) | 2005-03-09 | 2006-09-21 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
KR100691177B1 (ko) * | 2005-05-31 | 2007-03-09 | 삼성전기주식회사 | 백색 발광소자 |
TWI288979B (en) | 2006-02-23 | 2007-10-21 | Arima Optoelectronics Corp | Light emitting diode bonded with metal diffusion and manufacturing method thereof |
KR101030659B1 (ko) * | 2006-03-10 | 2011-04-20 | 파나소닉 전공 주식회사 | 발광 소자 |
CN101079460B (zh) * | 2006-05-23 | 2010-05-12 | 台达电子工业股份有限公司 | 发光装置 |
TW200822788A (en) | 2006-11-09 | 2008-05-16 | Univ Nat Central | Method of using laser in fabricating GaN device |
US20080277682A1 (en) * | 2007-03-29 | 2008-11-13 | The Regents Of The University Of California | Dual surface-roughened n-face high-brightness led |
US8114698B2 (en) | 2007-11-30 | 2012-02-14 | The Regents Of The University Of California | High light extraction efficiency nitride based light emitting diode by surface roughening |
CN101226977A (zh) * | 2007-12-18 | 2008-07-23 | 西安电子科技大学 | GaN基发光二极管表面粗化的处理方法 |
US8471288B2 (en) * | 2009-09-15 | 2013-06-25 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer |
TWI411135B (zh) | 2009-12-24 | 2013-10-01 | Walsin Lihwa Corp | 發光裝置及增益發光裝置的電注入效率和出光效率的方法 |
US8154042B2 (en) | 2010-04-29 | 2012-04-10 | Koninklijke Philips Electronics N V | Light emitting device with trenches and a top contact |
US20120023516A1 (en) * | 2010-07-21 | 2012-01-26 | Robert Wolinsky | System and method for verifying home television audience viewership via a set-top box |
CN102169936A (zh) * | 2011-02-16 | 2011-08-31 | 亚威朗光电(中国)有限公司 | 图形衬底和led芯片 |
CN104160520A (zh) * | 2012-02-01 | 2014-11-19 | 松下电器产业株式会社 | 半导体发光元件、其制造方法和光源装置 |
-
2013
- 2013-01-03 CN CN201380005153.9A patent/CN104040734B/zh active Active
- 2013-01-03 KR KR1020147022241A patent/KR20140117515A/ko active Application Filing
- 2013-01-03 CN CN201810745910.0A patent/CN108767076B/zh active Active
- 2013-01-03 EP EP13705009.2A patent/EP2803093B1/en active Active
- 2013-01-03 WO PCT/IB2013/050055 patent/WO2013105004A1/en active Application Filing
- 2013-01-03 US US14/363,354 patent/US10074772B2/en active Active
- 2013-01-03 JP JP2014550792A patent/JP6535465B2/ja active Active
- 2013-01-03 KR KR1020197031019A patent/KR102158440B1/ko active IP Right Grant
- 2013-01-10 TW TW106122206A patent/TWI646704B/zh active
- 2013-01-10 TW TW102100977A patent/TWI646703B/zh active
-
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- 2018-03-28 US US15/938,826 patent/US20180219128A1/en active Pending
Patent Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030119218A1 (en) * | 2001-12-20 | 2003-06-26 | Lg Electronics Inc. | Light emitting device and manufacturing method thereof |
US20050023549A1 (en) * | 2003-08-01 | 2005-02-03 | Gardner Nathan F. | Semiconductor light emitting devices |
JP2005150261A (ja) * | 2003-11-12 | 2005-06-09 | Matsushita Electric Works Ltd | 多重反射防止構造を備えた発光素子とその製造方法 |
JP2007521641A (ja) * | 2003-12-09 | 2007-08-02 | ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | 表面粗化による高効率の(B,Al,Ga,In)Nベースの発光ダイオード |
JP2006191103A (ja) * | 2005-01-03 | 2006-07-20 | Samsung Electro Mech Co Ltd | 窒化物半導体発光素子 |
JP2007150304A (ja) * | 2005-11-24 | 2007-06-14 | Samsung Electro Mech Co Ltd | 垂直構造の窒化ガリウム系発光ダイオード素子 |
JP2007165515A (ja) * | 2005-12-13 | 2007-06-28 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
WO2007094490A1 (ja) * | 2006-02-16 | 2007-08-23 | Sumitomo Chemical Company, Limited | 3族窒化物半導体発光素子及びその製造方法 |
JP2007273975A (ja) * | 2006-03-10 | 2007-10-18 | Matsushita Electric Works Ltd | 発光素子 |
JP2008066557A (ja) * | 2006-09-08 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
US20080102549A1 (en) * | 2006-10-31 | 2008-05-01 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor light emitting device |
WO2009084325A1 (ja) * | 2007-12-28 | 2009-07-09 | Mitsubishi Chemical Corporation | Led素子およびled素子の製造方法 |
WO2009084670A1 (ja) * | 2007-12-28 | 2009-07-09 | Nichia Corporation | 半導体発光素子およびその製造方法 |
JP2011526083A (ja) * | 2008-06-27 | 2011-09-29 | ブリッジラックス インコーポレイテッド | 発光ダイオードにおいて使用するための表面にテクスチャが施されたカプセル |
US20100044732A1 (en) * | 2008-08-20 | 2010-02-25 | Au Optronics Corporation | Light Emitting Diode Structure and Method of Forming the Same |
JP2010056459A (ja) * | 2008-08-29 | 2010-03-11 | Kyocera Corp | 発光素子の製造方法 |
US20100151602A1 (en) * | 2008-12-17 | 2010-06-17 | Palo Alto Research Center Incorporated | Laser roughening to improve led emissions |
JP2011066048A (ja) * | 2009-09-15 | 2011-03-31 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子 |
JP2011100829A (ja) * | 2009-11-05 | 2011-05-19 | Toshiba Corp | 半導体発光装置の製造方法および半導体発光装置 |
US20110114966A1 (en) * | 2009-11-06 | 2011-05-19 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Light emitting diode device |
US20110266518A1 (en) * | 2010-04-28 | 2011-11-03 | Lg Innotek Co., Ltd. | Light Emitting Device, Light Emitting Device Package, and Lighting System |
US20110300337A1 (en) * | 2010-06-08 | 2011-12-08 | Chuan-Cheng Tu | Substrate for light-emitting diode |
JP2011066453A (ja) * | 2010-12-27 | 2011-03-31 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
JP2012195321A (ja) * | 2011-03-14 | 2012-10-11 | Toshiba Corp | 半導体発光素子 |
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CN104040734B (zh) | 2018-07-20 |
TWI646703B (zh) | 2019-01-01 |
TW201340393A (zh) | 2013-10-01 |
US10074772B2 (en) | 2018-09-11 |
CN108767076B (zh) | 2021-10-15 |
EP2803093B1 (en) | 2019-06-26 |
WO2013105004A1 (en) | 2013-07-18 |
US20140327030A1 (en) | 2014-11-06 |
EP2803093A1 (en) | 2014-11-19 |
CN108767076A (zh) | 2018-11-06 |
KR20140117515A (ko) | 2014-10-07 |
CN104040734A (zh) | 2014-09-10 |
TWI646704B (zh) | 2019-01-01 |
KR20190122271A (ko) | 2019-10-29 |
TW201826562A (zh) | 2018-07-16 |
JP6535465B2 (ja) | 2019-06-26 |
US20180219128A1 (en) | 2018-08-02 |
KR102158440B1 (ko) | 2020-09-23 |
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