TWM461881U - 圖案化發光元件基板 - Google Patents
圖案化發光元件基板 Download PDFInfo
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- TWM461881U TWM461881U TW102206774U TW102206774U TWM461881U TW M461881 U TWM461881 U TW M461881U TW 102206774 U TW102206774 U TW 102206774U TW 102206774 U TW102206774 U TW 102206774U TW M461881 U TWM461881 U TW M461881U
- Authority
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- Taiwan
- Prior art keywords
- substrate
- light
- patterned
- emitting element
- patterned light
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000001039 wet etching Methods 0.000 claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 210000003298 dental enamel Anatomy 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 5
- 238000007788 roughening Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Weting (AREA)
Description
本創作之實施例係關於圖案化發光元件基板,特別是,有關於有粗糙表面之圖案化發光元件基板以及使用此基板的發光元件。
業界大多會使用圖案化藍寶石基板(patterned sapphire substrate,PSS)做為發光元件的基板,其有提升亮度、減少差排密度並能有良好的光取出效率等等的優點。
然而,習知技術的圖案化發光元件基板上之圖案係為圓滑表面,由於其表面角度範圍限制,對於發光元件所發出的光常有特定範圍角度的反射。
因此,需要能減小表面角度範圍限制以增加光線漫射之方法以更增加亮度。
本創作之實施例提出了能減小表面角度範圍限制以增加光線漫射之方法以更增加亮度之圖案化發光元件基板,以及使用此基板的發光元件。
依據本創作之一觀點,提出了一種圖案化發光元件基板,其包括由複數個錐體所構成之一表面,其中各該錐體表面係使用一濕式
蝕刻程序進行一粗糙化處理而產生粗糙表面。
其中,圖案化發光元件基板為一藍寶石基材或是一矽質基材。
其中,濕式蝕刻程序為化學蝕刻(chemical etching)法。
其中,複數個錐體係均勻分布。
其中,複數個錐體係彼此不接觸。
依據本創作之另一觀點,提出了一種發光元件,包含一圖案化基板,其包括由複數個錐體所構成之一表面,各錐體表面係使用一濕式蝕刻程序進行一粗糙化處理而產生粗糙表面。一第一半導體層,係配置在圖案化基板上;一發光層,係配置在第一半導體層上;一第二半導體層,係配置在發光層上;一第一歐姆電極,係接觸第一半導體層;以及一第二歐姆電極,係接觸第二半導體層。
其中,圖案化基板為一藍寶石基材或是一矽質基材。
其中,濕式蝕刻程序為化學蝕刻(chemical etching)法。
其中,複數個錐體係均勻分布。
其中,複數個錐體係彼此不接觸。
10‧‧‧圖案化發光元件基板
11‧‧‧基板本體
12、220‧‧‧錐體
15‧‧‧濕式蝕刻程序
200‧‧‧圖案化基板
300‧‧‧第一半導體層
310‧‧‧發光層
320‧‧‧第二半導體層
330‧‧‧第一歐姆電極
340‧‧‧第二歐姆電極
第1圖係為本創作之圖案化發光元件基板進行濕式蝕刻程序之示意圖;第2圖係為本創作之圖案化發光元件基板所包含的錐體之粗糙表
面之示意圖;以及第3圖係為本創作之發光元件之示意圖。
接下來,本創作之實施例會參照本創化之示範性實施例之圖示更完整地說明。在此所使用的,詞彙「以及/或是」包含一或多個相關所列項目之任一或全部組合。像是在處理一列元素之「至少一」的表達,會修正該整列元素而不會修正該列中的個別元素。
將會說明依據本創作之實施例之圖案化發光元件基板。第1圖係為本創作之圖案化發光元件基板進行濕式蝕刻程序之示意圖。第2圖係為本創作之圖案化發光元件基板所包含的錐體之粗糙表面之示意圖。
如第1圖所示,本實施例之圖案化發光元件基板10包括一基板本體11以及一由複數個錐體12所構成之表面。其中,圖案化發光元件基板10可為一藍寶石基材或是一矽質基材所製成。複數個錐體12在基板本體11上可均勻分布,或是視需要而以特定方式分布。其中,複數個錐體12係彼此不接觸。
接著,對複數個錐體12使用濕式蝕刻程序15進行一粗糙化處理,以在錐體12上產生粗糙表面,如第2圖所示。錐體12之粗糙表面可提供較佳的漫射效果,進而增加本創作之發光元件的發光亮度。
本創作之實施例中使用之溼式蝕刻方法為常見的化學蝕刻(chemical etching)法。
請參照第3圖,圖中係以一使用本創作之圖案化基板200的發光二極體作為發光元件之一實施例說明。發光二極體包括一圖案化基板200、配置在圖案化基板200上的一第一半導體層300、配置在第一半導體層300上的一發光層310、配置在發光層310上的一第二半導體層320、接觸第一半導體層300的一第一歐姆電極330、以及接觸第二半導體層320的一第二歐姆電極340。圖案化基板200包括由複數個錐體220所構成之一表面,且此些錐體220之表面係經過溼式蝕刻程序進行一粗糙化處理而產生粗糙表面。
錐體220之粗糙表面對於發光層310朝向圖案化基板200發射的光可提供較佳的漫射效果,進而增加本創作之發光二極體的發光亮度。
其中,圖案化基板200可為一藍寶石基材或是一矽質基材。複數個錐體220在圖案化基板200上可均勻分布,或是視需要而以特定方式分布。複數個錐體12可彼此不接觸。
其中,第一半導體層300、發光層310與第二半導體層320可為III-V族系半導體,如氮化鎵系半導體。至於第一與第二歐姆電極330和340可各自選自包含鎳、鉛、鈷、鐵、鈦、銅、銠、金、釕、鎢、鋯、鉬、鉭、銀及此等之氧化物、氮化物所構成之群中所選出的至少一種合金或多層膜。另外,第一與第二歐姆電極330和340也可以各自選自包含銠、銥、銀、鋁所構成之群中所選出的一種合金或多層膜。
以上所述僅為舉例性,而非為限制性者。任何未脫離本創作之精
神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。
10‧‧‧圖案化發光元件基板
11‧‧‧基板本體
12‧‧‧錐體
15‧‧‧濕式蝕刻程序
Claims (10)
- 一種圖案化發光元件基板,該圖案化發光元件基板包括由複數個錐體所構成之一表面,其中各該錐體表面係使用一濕式蝕刻程序進行一粗糙化處理而產生粗糙表面。
- 如申請專利範圍第1項所述之圖案化發光元件基板,其中該圖案化發光元件基板為一藍寶石基材或是一矽質基材。
- 如申請專利範圍第1項所述之圖案化發光元件基板,其中該濕式蝕刻程序為化學蝕刻(chemical etching)法。
- 如申請專利範圍第1項所述之圖案化發光元件基板,其中該複數個錐體係均勻分布。
- 如申請專利範圍第4項所述之圖案化發光元件基板,其中該複數個錐體係彼此不接觸。
- 一種圖案化發光元件,包含:一圖案化基板,該圖案化基板包括由複數個錐體所構成之一表面,其中各該錐體表面係使用一濕式蝕刻程序進行一粗糙化處理,以產生粗糙表面;一第一半導體層,係配置在該圖案化基板上;一發光層,係配置在該第一半導體層上;一第二半導體層,係配置在該發光層上;一第一歐姆電極,係接觸該第一半導體層;以及一第二歐姆電極,係接觸該第二半導體層。
- 如申請專利範圍第6項所述之圖案化發光元件,其中該圖案化基板為一藍寶石基材或是一矽質基材。
- 如申請專利範圍第6項所述之圖案化發光元件,其中該濕式蝕刻 程序為化學蝕刻(chemical etching)法。
- 如申請專利範圍第6項所述之圖案化發光元件,其中該複數個錐體係均勻分布。
- 如申請專利範圍第9項所述之圖案化發光元件,其中該複數個錐體係彼此不接觸。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102206774U TWM461881U (zh) | 2013-04-12 | 2013-04-12 | 圖案化發光元件基板 |
US13/910,447 US20140306251A1 (en) | 2013-04-12 | 2013-06-05 | Patterned light emitting element substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102206774U TWM461881U (zh) | 2013-04-12 | 2013-04-12 | 圖案化發光元件基板 |
Publications (1)
Publication Number | Publication Date |
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TWM461881U true TWM461881U (zh) | 2013-09-11 |
Family
ID=49629465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW102206774U TWM461881U (zh) | 2013-04-12 | 2013-04-12 | 圖案化發光元件基板 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20140306251A1 (zh) |
TW (1) | TWM461881U (zh) |
-
2013
- 2013-04-12 TW TW102206774U patent/TWM461881U/zh not_active IP Right Cessation
- 2013-06-05 US US13/910,447 patent/US20140306251A1/en not_active Abandoned
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Publication number | Publication date |
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US20140306251A1 (en) | 2014-10-16 |
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