JP6535465B2 - 選択的な領域粗化による制御されたled光出力 - Google Patents
選択的な領域粗化による制御されたled光出力 Download PDFInfo
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- JP6535465B2 JP6535465B2 JP2014550792A JP2014550792A JP6535465B2 JP 6535465 B2 JP6535465 B2 JP 6535465B2 JP 2014550792 A JP2014550792 A JP 2014550792A JP 2014550792 A JP2014550792 A JP 2014550792A JP 6535465 B2 JP6535465 B2 JP 6535465B2
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- 238000007788 roughening Methods 0.000 title description 23
- 238000000034 method Methods 0.000 claims description 64
- 230000008569 process Effects 0.000 claims description 42
- 238000000605 extraction Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000010329 laser etching Methods 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910003923 SiC 4 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
Claims (10)
- 発光素子の目標光取り出し効率を決定し、
粗化されていない表面領域に対する粗化された表面領域の割合であって、決定された当該割合に基づいて構成されたときに前記発光素子が前記目標光取り出し効率で発光することになる割合を、出力関数に基づいて決定し、
発光面を通して光を発するように構成された前記発光素子を生成し、前記発光面は、コンタクトによって被覆されない前記発光素子の頂面であり、
前記発光面に表面エッチングプロセスを適用して、前記粗化された表面領域を作り出し、粗化されない表面領域に対する粗化される表面領域が前記決定された割合に基づき、且つ
前記発光面上にエッチング阻止パターンを適用して、前記粗化されていない領域を作り出し、粗化された表面領域の量に対する粗化されていない表面領域の量は前記決定された割合に基づき、前記粗化されていない表面領域は、前記粗化された表面領域を取り囲む、
ことを有する方法。 - 前記エッチング阻止パターンを適用することは、マスク材料を適用することを含む、請求項1に記載の方法。
- 前記マスク材料を適用することは、光リソグラフィプロセスを含む、請求項2に記載の方法。
- 前記発光素子は、前記粗化された表面領域から第1の光出力レベルで光を発し、前記粗化されていない表面領域から前記第1の光出力レベルよりも小さな第2の光出力レベルで光を発する、請求項1に記載の方法。
- 前記第1の光出力レベルは、前記第2の光出力レベルの略2倍である、請求項4に記載の方法。
- 前記粗化された表面領域は、識別可能な光学的効果をもたらすようにパターニングされる、請求項1に記載の方法。
- 前記粗化された表面領域は複数の選択領域を含み、前記選択領域の少なくとも1つは、別の前記選択領域の粗さの度合いとは異なる粗さの度合いにまで粗化される、請求項1に記載の方法。
- 前記表面エッチングプロセスは化学エッチングを含む、請求項1に記載の方法。
- 前記化学エッチングは光電子化学エッチングを含む、請求項8に記載の方法。
- 前記表面エッチングプロセスはレーザエッチングを含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261584836P | 2012-01-10 | 2012-01-10 | |
US61/584,836 | 2012-01-10 | ||
PCT/IB2013/050055 WO2013105004A1 (en) | 2012-01-10 | 2013-01-03 | Controlled led light output by selective area roughening |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015503849A JP2015503849A (ja) | 2015-02-02 |
JP6535465B2 true JP6535465B2 (ja) | 2019-06-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014550792A Active JP6535465B2 (ja) | 2012-01-10 | 2013-01-03 | 選択的な領域粗化による制御されたled光出力 |
Country Status (7)
Country | Link |
---|---|
US (2) | US10074772B2 (ja) |
EP (1) | EP2803093B1 (ja) |
JP (1) | JP6535465B2 (ja) |
KR (2) | KR102158440B1 (ja) |
CN (2) | CN108767076B (ja) |
TW (2) | TWI646703B (ja) |
WO (1) | WO2013105004A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102014201885A1 (de) * | 2014-02-03 | 2015-08-06 | Johnson Controls Automotive Electronics Gmbh | Abdeckscheibe für mindestens ein Anzeigeinstrument in einem Fahrzeug |
KR101630799B1 (ko) * | 2014-11-12 | 2016-06-16 | 주식회사 레이토피아 | 발광 소자 및 그의 제조방법 |
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-
2013
- 2013-01-03 KR KR1020197031019A patent/KR102158440B1/ko active IP Right Grant
- 2013-01-03 KR KR1020147022241A patent/KR20140117515A/ko active Application Filing
- 2013-01-03 CN CN201810745910.0A patent/CN108767076B/zh active Active
- 2013-01-03 WO PCT/IB2013/050055 patent/WO2013105004A1/en active Application Filing
- 2013-01-03 EP EP13705009.2A patent/EP2803093B1/en active Active
- 2013-01-03 US US14/363,354 patent/US10074772B2/en active Active
- 2013-01-03 CN CN201380005153.9A patent/CN104040734B/zh active Active
- 2013-01-03 JP JP2014550792A patent/JP6535465B2/ja active Active
- 2013-01-10 TW TW102100977A patent/TWI646703B/zh active
- 2013-01-10 TW TW106122206A patent/TWI646704B/zh active
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2018
- 2018-03-28 US US15/938,826 patent/US20180219128A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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US20140327030A1 (en) | 2014-11-06 |
KR20140117515A (ko) | 2014-10-07 |
CN104040734B (zh) | 2018-07-20 |
US20180219128A1 (en) | 2018-08-02 |
EP2803093B1 (en) | 2019-06-26 |
KR20190122271A (ko) | 2019-10-29 |
CN108767076B (zh) | 2021-10-15 |
JP2015503849A (ja) | 2015-02-02 |
KR102158440B1 (ko) | 2020-09-23 |
US10074772B2 (en) | 2018-09-11 |
TWI646704B (zh) | 2019-01-01 |
EP2803093A1 (en) | 2014-11-19 |
CN108767076A (zh) | 2018-11-06 |
TWI646703B (zh) | 2019-01-01 |
TW201826562A (zh) | 2018-07-16 |
WO2013105004A1 (en) | 2013-07-18 |
TW201340393A (zh) | 2013-10-01 |
CN104040734A (zh) | 2014-09-10 |
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