201145579 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明是有關於一稂發光二極體基板，尤指一種令跨接 結構之底部之厚度均勻，進而提高了製程良率之發光二 極體基板。 [0002] [先前技術] 發光二極體係為一種以半導體為材料之發光元件，主要 發’光原理係因半導體中之載子產生復合而發出光子；發 〇 光二極體亦被稱為第四代照明光源或綠色光源，係為眾 所矚目之熱門明星產品。 [0003] 〇 一般係於例如藍寶石、矽、碳化矽或砷化鎵等材料之發 光二極體基板上層設複數個半導體層，以構成發光二極 體晶片，而為了有效提升發光二極體晶片之外部量子效 率，眾多之改善方法陸續被提出，其中，將發光二極體 基板表面予以粗糙化，或者於發光二極體基板表面設置 凸出、凹陷之微結構，以破壞發光二極體晶片内部之光 波導效應，進而提升其外部量子效率，實為眾多改善方 法中之效果顯著者。 [0004] 請參閱第1圖所示，其係缯'示發光二極禮基板及跨接結構 099118631 示意圖’由下而上分別為基板1、設於基板上之半導體層 5及設於半導體層5上之跨接結構3，然而，進行半導體跨 接製程時，發光二極體基板設置之凸出、凹陷之微結構4 容易造成跨接結構3之底部31凹凸不平，亦即其厚度 勻，當底部31之厚度太小時（如第1圖内雙向箭碩所于） 跨接結構3之底部31非常容易斷裂，進而降低了製 程良率 表單煸號A0101 第3頁/共15頁 201145579 ，實有改善進步之空間。 【發明内容】 [0005] [0006] [0007] 有鑑於習知技術之各項問題，本發明人基於多年研究開 發與諸多實務經驗，提出一種發光二極體基板，以作為 改善上述缺點之實現方式與依據。 本發明之其一目的在於，提供一令跨接結構之底部之厚 度均勻之發光二極體基板。 本發明之另一目的在於，提供一提高磊晶或製程良率之 發光二極體基板。 本發明之再一目的在於，提供一發光二極體基板，基板 之表面劃分為複數個第一單元及複數個第二單元，各該 第一單元具有複數個微結構，各該第二單元具有相異於 各該第一單元之該些第一微結構之複數個第二微結構， 例如微粗輪化表面，該微粗縫化表面之表面粗链度小於 2〇 nm，各該第一單元之間設有第二單元，而該些第二單 元更環設於各該第一單元之外邊由於各該第二單元係 為表面粗糙度小於2〇 nm之槪粗糙化表面，因此使得跨接 結構之底部之厚度均勻’進而提高了製程良率。 兹為使貴審查委員對本發明之技術特徵及所達到之功效 有更進一步之瞭解與認識，謹佐以較佳之實施例及配合 詳細之說明如後。 【實施方式】 以下將參照相關圖式，說明本發明發光二極體基板之較 佳實施例，為使便於理解’下述實施例中之相同元件係 以相同之符號標示來說明。 099118631 表單編號A0101 第4頁/共15頁 0992032980-0 [0008] 201145579 闺料’請參_20料，錢㈣本判[較佳實施 例之俯視圖，本發明之發光二極體基板1之表面11係分為 複數個第—單元12及複數個第二單元13，前述該表面U 可為一長晶面，各該第一單元12具有凸出之複數個第一 微結構，例如凸出結構121，該些凸出結構121之剖面係 , 例如為圓形或梯形或錐形，該些凸出結構121之最高處與 最低處之平均高度差係為0.2 Mm以上，各該第二單元13 具有相異於各該第一單元12之該些第—微結構之複數個 第一微結構，例如微粗糙化表面131，該微粗糙化表面 〇 131之表面粗糙度小於2〇 nm *請再一併參閱第3圖所示 ，各該第一早元12之間設有該些第二單元13，而該些第 二單元13更環設於各該第一單元12之外邊，前述基板 材料係為例如藍寶石、矽、碳化矽、鍺或坤化鎵等。 [0010] 凊再參閱第4圖所示’其係繪不本發明發光二極體基板及 跨接結構示意圖’由上而下分別為發光二锋體基板1、設 於基板上之半導體層5及設於半導體層5上之跨接結構2， Q 其中半導體層5係具有穿孔且跨：,接結構2係設於穿孔中而 使得跨接結構2之底部21恰可接觸各該第二單元13，由於 各該第二單元13係為表面粗糙度小於20 nm之微粗糙化表 面131，因此使得跨接結構2之底部21之厚度均勻，進而 提高了製程良率。 [0011] 請參閱第5圖所示，其係繪示本發明第二較佳實施例之示 意圖，由上而下分別為本發明之發光二極體基板1、設於 基板上之半導體層5及設於半導體層5上之跨接結構2，基 板1之一表面11分為複數個第一單元12及複數個第二單元 099118631 表單編號A0101 第5頁/共15頁 0992032980-0 201145579 13，前述該表面U可為一長晶面，而與上述較佳實施例 之不同處在於，各該第-單元12具有凹陷之複數個微結 構，例如凹陷結構122，該些凹陷結構122之剖面係例如 為圓形或梯形或錐形，該些凹陷結構122之最高處與最低 處之平均高度差係為〇·2 μιη以上，各該第二單元13具有 相異於各該第-單心之該些第_微結構之複數個第二 微結構，例如微粗糙化表面131，該粗糙化表面131之表 面粗Hj、於2G nm，各該第-單元之間設冑第二單元 13，而6玄些第二單元η更環設於各該第—單元丨^之外邊（ 如第2圖所示），前埤基板1之材料係為例如藍寶石、矽、 碳化矽、鍺或砷化鎵等，而跨接結構2之底部恰可位於各 該第二單元13，由於各該第二單元13係為表面粗糙度小 於20 nm之微粗糙化表面131，因此使得跨接結構2之底 邓21之厚度均勻，進而提高了製程良率。 [0012] 明參閱第6圖所示，其係繪示本發明第三較佳實施例之示 意圖，由上而下分別為本發明之發羌二極體基板i、設於 : ：：... - ... 基板上之半導體層I及設於半導體層5上之跨接結構2，基 板1之一表面11分為複數個第一單元12及複數個第二單元 ，前述該表面Η可為一長晶面，而與上述較佳實施例 之不同處在於’各該第一單元丨2具有粗糙化表面丨23，該 粗縫化表面123之最高處與最低處之平均高度差為〇.2 μ m以上’各該第二單元13具有相異於各該第一單元12之粗 糖化表面123之複數個第二微結構，例如微粗糙化表面 131 ’該微粗糙化表面ι31之表面粗糙度小於2〇 nni，各 該第—單元12之間設有各該第二單元13，而該些第二單 099118631 表單編號A0101 第6頁/共15頁 0992032980-0 201145579 凡13更環設於各該第一單元12之外邊（如第2圖所示），而 前述基板1之材料係為例如藍寶石、矽、碳化矽、鍺或砷 化鎵等’由於各該第二單元13係為表面粗糙度小於2〇 nm 之微粗糙化表面131，因此使得跨接結構2之底部21之厚 度均勻，進而提高了製程良率。 [0013]201145579 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a light-emitting diode substrate, and more particularly to a light-emitting layer having a uniform thickness at the bottom of the jumper structure, thereby improving process yield. Diode substrate. [0002] [Prior Art] A light-emitting diode system is a light-emitting element made of a semiconductor material, and the main principle of light is that a photon is emitted by a carrier in a semiconductor; a light-emitting diode is also called a fourth Generation lighting source or green light source is a popular star product. [0003] A plurality of semiconductor layers are generally laminated on a light-emitting diode substrate such as sapphire, germanium, tantalum carbide or gallium arsenide to form a light-emitting diode wafer, and in order to effectively enhance the light-emitting diode wafer The external quantum efficiency, a number of improvement methods have been proposed, in which the surface of the light-emitting diode substrate is roughened, or a convex or concave microstructure is disposed on the surface of the light-emitting diode substrate to destroy the light-emitting diode chip. The internal optical waveguide effect, which in turn enhances its external quantum efficiency, is a significant effect in many improved methods. [0004] Please refer to FIG. 1 , which is a schematic diagram of a light-emitting diode substrate and a jumper structure 099118631. The bottom surface is a substrate 1, a semiconductor layer 5 disposed on the substrate, and a semiconductor layer. 5, the jumper structure 3, however, when performing the semiconductor bridging process, the protruding and recessed microstructures 4 provided by the light-emitting diode substrate are likely to cause the bottom portion 31 of the jumper structure 3 to be uneven, that is, the thickness thereof is uniform. When the thickness of the bottom portion 31 is too small (as shown in Fig. 1 for the two-way arrow), the bottom portion 31 of the jumper structure 3 is very easy to break, thereby reducing the process yield form nickname A0101, page 3/15 pages, 201145579, There is room for improvement. SUMMARY OF THE INVENTION [0006] In view of various problems of the prior art, the inventors have proposed a light-emitting diode substrate based on years of research and development and many practical experiences, as an improvement of the above disadvantages. Ways and basis. It is an object of the present invention to provide a light-emitting diode substrate having a uniform thickness at the bottom of the jumper structure. Another object of the present invention is to provide a light-emitting diode substrate having improved epitaxial or process yield. A further object of the present invention is to provide a light emitting diode substrate having a surface divided into a plurality of first cells and a plurality of second cells, each of the first cells having a plurality of microstructures, each of the second cells having Different from the plurality of second microstructures of the first microstructures of the first unit, such as a micro-roughened surface, the surface roughness of the slightly roughened surface is less than 2 〇 nm, each of the first A second unit is disposed between the units, and the second units are further disposed outside the first unit. Since each of the second units is a roughened surface having a surface roughness of less than 2 〇 nm, the cross is The thickness of the bottom of the structure is uniform, which in turn improves the process yield. For a better understanding and understanding of the technical features and the efficacies of the present invention, the preferred embodiments and the detailed description are as follows. [Embodiment] Hereinafter, preferred embodiments of the light-emitting diode substrate of the present invention will be described with reference to the accompanying drawings, and the same elements in the following embodiments are denoted by the same reference numerals. 099118631 Form No. A0101 Page 4 / Total 15 Page 0992032980-0 [0008] 201145579 闺 ' 请 请 请 20 20 20 20 , 请 请 请 [ [ [ [ [ [ [ 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视 俯视The 11 series is divided into a plurality of first unit 12 and a plurality of second units 13. The surface U may be an elongated surface, and each of the first units 12 has a plurality of first microstructures protruding, such as a protruding structure. 121. The cross-sections of the protruding structures 121 are, for example, circular or trapezoidal or tapered. The average height difference between the highest and lowest points of the protruding structures 121 is 0.2 Mm or more, and each of the second units 13 And having a plurality of first microstructures different from the first microstructures of the first unit 12, such as the micro-roughened surface 131, the surface roughness of the micro-roughened surface 〇131 is less than 2 〇nm * Please As shown in FIG. 3, the second units 13 are disposed between the first early elements 12, and the second units 13 are further disposed outside the first unit 12, and the substrate material is It is, for example, sapphire, samarium, tantalum carbide, niobium or gallium arsenide. [0010] Referring to FIG. 4, the schematic diagram of the light-emitting diode substrate and the bridging structure of the present invention is a light-emitting two-front substrate 1 and a semiconductor layer 5 disposed on the substrate. And a bridging structure 2, Q disposed on the semiconductor layer 5, wherein the semiconductor layer 5 has a perforation and a span: the connecting structure 2 is disposed in the through hole such that the bottom portion 21 of the bridging structure 2 can directly contact each of the second unit 13. Since each of the second units 13 is a micro-roughened surface 131 having a surface roughness of less than 20 nm, the thickness of the bottom portion 21 of the bridging structure 2 is made uniform, thereby improving the process yield. [0011] Referring to FIG. 5, there is shown a schematic view of a second preferred embodiment of the present invention, which is a light-emitting diode substrate 1 of the present invention and a semiconductor layer 5 disposed on a substrate. And the bridging structure 2 disposed on the semiconductor layer 5, one surface 11 of the substrate 1 is divided into a plurality of first units 12 and a plurality of second units 099118631 Form No. A0101 Page 5 / Total 15 Page 0992032980-0 201145579 13, The surface U may be an elongated surface, and the difference from the above preferred embodiment is that each of the first unit 12 has a plurality of microstructures, such as a recess structure 122, and a profile of the recess structure 122. For example, it is circular or trapezoidal or tapered, and the average height difference between the highest and lowest points of the recessed structures 122 is 〇·2 μιη or more, and each of the second units 13 has a different origin from each of the first-single hearts. a plurality of second microstructures of the first _ microstructure, such as a micro-roughened surface 131, a surface roughness Hj of the roughened surface 131, at 2G nm, and a second unit 13 between each of the first units 6 Xuan some second unit η is further arranged outside each of the first unit 丨^ As shown in FIG. 2, the material of the front substrate 1 is, for example, sapphire, germanium, tantalum carbide, niobium or gallium arsenide, and the bottom of the bridging structure 2 can be located in each of the second units 13, due to The second unit 13 is a micro-roughened surface 131 having a surface roughness of less than 20 nm, thereby making the thickness of the bottom portion 21 of the bridging structure 2 uniform, thereby improving the process yield. [0012] Referring to FIG. 6, there is shown a schematic view of a third preferred embodiment of the present invention, which is a top-down diode substrate i of the present invention from top to bottom, and is located at: ::.. a semiconductor layer I on the substrate and a bridging structure 2 disposed on the semiconductor layer 5, one surface 11 of the substrate 1 is divided into a plurality of first cells 12 and a plurality of second cells, the surface being It is a long crystal face, and differs from the above preferred embodiment in that each of the first unit turns 2 has a roughened surface 丨23, and the average height difference between the highest and lowest points of the roughened surface 123 is 〇 . . 2 μ m or more 'each of the second units 13 has a plurality of second microstructures different from the coarsely saccharified surface 123 of each of the first units 12, such as a surface of the micro-roughened surface 131 'the micro-roughened surface ι 31 The roughness is less than 2〇nni, and each of the second units 13 is disposed between each of the first units 12, and the second ones are 099118631 Form No. A0101 Page 6/15 pages 0992032980-0 201145579 Outside the first unit 12 (as shown in FIG. 2), and the material of the substrate 1 is, for example, blue Stone, tantalum, tantalum carbide, niobium or gallium arsenide, etc. 'Because each of the second units 13 is a micro-roughened surface 131 having a surface roughness of less than 2 〇 nm, the thickness of the bottom portion 21 of the bridging structure 2 is made uniform, In turn, the process yield is improved. [0013]
請參閱第7圖所示，其係繪示本發明第四較佳實施例之示 意圖’由上而下分別為本發明之發光二極體基板1、設於 基板上之半導體層5及設於半導體層5上之跨接結構2，基 板1之一表面11分為複數個第一單元】2及複數個第二單元 13 ’前述該表面丨1可為長晶面_而與上述較佳實施例 之不同處在於’各該第一單元12具有複數個第一微結構 ，例如複數個凸出結構121及複數個凹.陷結構122，該些 凸出結構121或凹陷結構122之最高處與最低處之平均高 度差係為0.2 μιη以上，各該第二單元13具有相異於各該 第一單元12之凸出結構121及凹陷結構122之複數個第二 微結構’例如微粗糙化表面131，該微粗糙化表面131之 表面粗糙度小於20 nm，各該第一單元12之間設有各該第 二單元13，而該些第二單元13更環設於各該第一單元12 之外邊（如第2圖所示），而前述基板1之材料係為例如藍 寶石、矽、碳化矽、鍺或砷化鎵等，由於各該第二單元 13係為表面粗糙度小於20 nm之微粗糙化表面131，因此 使得跨接結構2之底部21之厚度均勻，進而提高了製程良 率。 在此需特別說明，一般而言，發光二極體基板上更層設 至少例如N型半導體層、一層設於N型半導體層上之發光 099118631 表單編號A0101 第7頁/共15頁 0992032980-0 [0014] 201145579 層、一層設於發光層上之p型半導體層等，由於非本發明 之要點，文中一併以半導體層5示意或省略，而不多作贅 述。 [0015] 綜上所述，本發明發光二極體基板至少具有提高製程良 率之優點，由於各該第二單元13係為表面粗糙度小於 20nm之微粗糙化表面131，因此使得跨接結構2之底部21 之厚度均勻，進而提高了製程良率。 [0016] 以上所述僅為舉例性，而非為限制性者。任何未脫離本 發明之精神與範疇，而對其進行之等效修改或變更，均 應包含於後附之申請專利範圍中。 【圖式簡單說明】 [0017] 第1圖係為習用發光二極體基板及跨接結構示意圖； 第2圖係為本發明之第一較佳實施例之示意圖； 第3圖係為本發明之第一較佳實施例之示意圖； 第4圖係為本發明之第一較佳實施例之示意圖； 第5圖係為本發明之第二較佳實施例之示意圖； 第6圖係為本發明之第三較佳實施树之示意圖；及 第7圖係為本發明之第四較佳實施例之示意圖。 【主要元件符號說明】 [0018] 1 基板 11表面 12第一單元 121凸出結構 122凹陷結構 1 2 3粗縫化表面 099118631 表單編號A0101 第8頁/共15頁 0992032980-0 201145579 13第二單元 131微粗糙化表面 2跨接結構 21底部 3跨接結構 31底部 4微結構 5半導體層 〇 099118631 表單編號A0101 第9頁/共15頁 0992032980-0Please refer to FIG. 7 , which is a schematic view showing a fourth preferred embodiment of the present invention. The light-emitting diode substrate 1 of the present invention, the semiconductor layer 5 disposed on the substrate, and the semiconductor layer 5 are disposed on the substrate. The cross-over structure 2 on the semiconductor layer 5, the surface 11 of the substrate 1 is divided into a plurality of first cells 2 and a plurality of second cells 13 'the surface 丨 1 may be an elongated surface _ The difference in the example is that each of the first units 12 has a plurality of first microstructures, such as a plurality of protrusion structures 121 and a plurality of concave structures 122, and the highest points of the protrusion structures 121 or the recess structures 122 are The lowest average height difference is 0.2 μm or more, and each of the second units 13 has a plurality of second microstructures different from the protruding structures 121 and the recessed structures 122 of the first unit 12, such as a micro-roughened surface. The surface roughness of the micro-roughened surface 131 is less than 20 nm, and each of the second units 13 is disposed between the first units 12, and the second units 13 are further disposed around the first unit 12 Outside (as shown in Fig. 2), and the material of the substrate 1 is an example Sapphire, bismuth, tantalum carbide, niobium or gallium arsenide, etc., since each of the second units 13 is a micro-roughened surface 131 having a surface roughness of less than 20 nm, so that the thickness of the bottom portion 21 of the bridging structure 2 is uniform, and further Increased process yield. In particular, in general, the light-emitting diode substrate is further provided with at least, for example, an N-type semiconductor layer and a layer of light-emitting layer provided on the N-type semiconductor layer. 099118631 Form No. A0101 Page 7 / Total 15 Page 0992032980-0 [0014] The 201145579 layer, a p-type semiconductor layer or the like provided on the light-emitting layer, which is not the main point of the present invention, is collectively shown or omitted in the semiconductor layer 5, and will not be further described. [0015] In summary, the light-emitting diode substrate of the present invention has at least the advantage of improving the process yield. Since each of the second cells 13 is a micro-roughened surface 131 having a surface roughness of less than 20 nm, the jumper structure is made. The thickness of the bottom 21 of 2 is uniform, thereby improving the process yield. [0016] The foregoing is illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS [0017] FIG. 1 is a schematic view of a conventional light-emitting diode substrate and a bridging structure; FIG. 2 is a schematic view of a first preferred embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a schematic view of a first preferred embodiment of the present invention; FIG. 5 is a schematic view of a second preferred embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 7 is a schematic view showing a fourth preferred embodiment of the present invention; and FIG. [Description of main component symbols] [0018] 1 substrate 11 surface 12 first unit 121 protruding structure 122 recessed structure 1 2 3 rough stitched surface 099118631 Form No. A0101 Page 8 / Total 15 Page 0992032980-0 201145579 13 Second unit 131 micro roughened surface 2 jumper structure 21 bottom 3 jumper structure 31 bottom 4 microstructure 5 semiconductor layer 〇 099118631 Form No. A0101 Page 9 / Total 15 Page 0992032980-0