JP2015228366A - 発光装置及び入出力装置 - Google Patents
発光装置及び入出力装置 Download PDFInfo
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- JP2015228366A JP2015228366A JP2015090086A JP2015090086A JP2015228366A JP 2015228366 A JP2015228366 A JP 2015228366A JP 2015090086 A JP2015090086 A JP 2015090086A JP 2015090086 A JP2015090086 A JP 2015090086A JP 2015228366 A JP2015228366 A JP 2015228366A
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Abstract
Description
本実施の形態では、本発明の一態様の発光装置について図面を用いて説明する。
図2(A)に示す発光装置は、カラーフィルタ方式を用いたトップエミッション構造の発光装置である。本実施の形態において、発光装置は、例えば、R(赤)、G(緑)、B(青)の3色の副画素で1つの色を表現する構成や、R(赤)、G(緑)、B(青)、W(白)の4色の副画素で1つの色を表現する構成、R(赤)、G(緑)、B(青)、Y(黄)の4色の副画素で1つの色を表現する構成等が適用できる。色要素としては特に限定はなく、RGBWY以外の色を用いてもよく、例えば、シアン、マゼンタなどで構成されてもよい。
図2(B)に図2(A)とは異なる、カラーフィルタ方式を用いたトップエミッション構造の発光装置を示す。以降の具体例では、先の具体例と異なる点のみ詳述し、共通する点は説明を省略する。
図3(A)に図2(A)とは異なる、カラーフィルタ方式を用いたトップエミッション構造の発光装置を示す。
図4に塗り分け方式を用いたトップエミッション構造の発光装置を示す。
次に、発光装置に用いることができる材料等を説明する。なお、本明細書中で先に説明した構成については説明を省略する場合がある。
本実施の形態では、本発明の一態様の入出力装置について図面を用いて説明する。
本実施の形態では、本発明の一態様の入出力装置について図面を用いて説明する。
図6は本発明の一態様の入出力装置の構成を説明する投影図である。
図7は本発明の一態様の入力部100の構成を説明する図である。
入力部の駆動方法について説明する。
第1のステップにおいて、第3のトランジスタM3を導通状態にした後に非導通状態にするリセット信号をゲートに供給し、検知素子Cの第1の電極11の電位を所定の電位にする(図7(C−1)期間T1参照)。
第2のステップにおいて、第2のトランジスタM2を導通状態にする選択信号をゲートに供給し、第1のトランジスタM1の第2の電極を信号線DLに電気的に接続する。
第3のステップにおいて、制御信号を検知素子Cの第2の電極12に供給し、制御信号及び検知素子Cの容量に基づいて変化する電位を第1のトランジスタM1のゲートに供給する。
第4のステップにおいて、第1のトランジスタM1のゲートの電位の変化がもたらす信号を信号線DLに供給する。
第5のステップにおいて、第2のトランジスタM2を非導通状態にする選択信号をゲートに供給する。
本発明の一態様では、第1の基板上に、第1の電極、EL層、及び第2の電極をこの順で形成し、かつ、第2の基板上に、アクティブマトリクス方式のタッチセンサ(検知素子、検知回路など)を形成する。また、第2の基板上には、第2の導電層(導電層853とも記す)、絶縁層、及び第1の導電層(導電層851とも記す)をこの順で形成する。このとき、第1の導電層及び第2の導電層を絶縁層の開口部を介して電気的に接続させる。そして、第2の電極と第1の導電層とが接続するように、第1の基板と第2の基板を対向させる。これにより、第1の導電層、第2の導電層、及び第2の電極を電気的に接続することができる。
図11(A)は、本発明の一態様の入出力装置の断面図の一例である。図11(B)は、トランジスタFET1及び検知素子C1の拡大図である。
図12(A)は、本発明の一態様の入出力装置の断面図の一例である。図12(B)は、トランジスタFET2及び検知素子C2の拡大図である。
本実施の形態では、本発明の一態様の入出力装置について図面を用いて説明する。
本実施の形態では、本発明の一態様の可撓性を有する発光装置の作製方法を例示する。なお、本実施の形態で説明する作製方法では、被剥離層として形成する層を変えることで、本発明の一態様の可撓性を有する入出力装置も作製することができる。
本実施の形態では、本発明の一態様を適用して作製できる電子機器及び照明装置について、図18及び図19を用いて説明する。
C1 検知素子
C2 検知素子
FET1 トランジスタ
FET2 トランジスタ
G1 走査線
M1 トランジスタ
M2 トランジスタ
M3 トランジスタ
M4 トランジスタ
10U 検知ユニット
11 第1の電極
12 第2の電極
14 窓部
16 可撓性基板
17 保護基材
17p 保護層
19 検知回路
80 枠
81 枠
100 入力部
201 作製基板
203 剥離層
205 被剥離層
207 接着層
221 作製基板
223 剥離層
225 被剥離層
231 基板
233 接着層
304 ゲート電極
304a 導電層
305 ゲート絶縁層
308a 半導体層
310 携帯情報端末
310a 電極
310b 電極
312 絶縁層
313 ヒンジ
314 絶縁層
315 筐体
316 表示パネル
320 携帯情報端末
322 表示部
325 非表示部
330 携帯情報端末
333 表示部
335 筐体
336 筐体
337 情報
339 操作ボタン
340 携帯情報端末
345 携帯情報端末
354 筐体
355 情報
356 情報
357 情報
358 表示部
500 入出力装置
501 表示部
502 画素
502B 副画素
502G 副画素
502R 副画素
503g 走査線駆動回路
510 可撓性基板
511 配線
519 端子
567p 反射防止層
801 基板
803 基板
804 発光部
806 駆動回路部
808 FPC
811 接着層
812 絶縁層
813 絶縁層
815 絶縁層
817 絶縁層
817a 絶縁層
817b 絶縁層
820 トランジスタ
821 絶縁層
822 接着層
823 スペーサ
825 接続体
825a 接続体
825b 接続体
830 発光素子
831 第1の電極
832 光学調整層
833 EL層
835 第2の電極
841 接着層
842 絶縁層
843 絶縁層
845 着色層
846 接着層
847 遮光層
848 空間
849 オーバーコート
851 導電層
852 絶縁層
852a 絶縁層
852b 絶縁層
853 導電層
853a 導電層
853b 導電層
854 導電層
855 コンタクト部
856 導電層
857 導電層
857a 導電層
857b 導電層
857c 導電層
879 接着層
880 容量素子
888 基板
889 接着層
891 FPC
892 接続体
893 絶縁層
894 導電層
895 絶縁層
896 導電層
897 絶縁層
898 接着層
899 基板
7100 携帯情報端末
7101 筐体
7102 表示部
7103 バンド
7104 バックル
7105 操作ボタン
7106 入出力端子
7107 アイコン
7200 照明装置
7201 台部
7202 発光部
7203 操作スイッチ
7210 照明装置
7212 発光部
7220 照明装置
7222 発光部
7300 入出力装置
7301 筐体
7302 表示部
7303 操作ボタン
7304 部材
7305 制御部
7400 携帯電話機
7401 筐体
7402 表示部
7403 操作ボタン
7404 外部接続ポート
7405 スピーカ
7406 マイク
Claims (13)
- 第1の基板と、
前記第1の基板上の発光素子と、
前記発光素子上の第1の導電層と、
前記第1の導電層上の第1の絶縁層と、
前記第1の絶縁層上の第2の導電層と、
前記第2の導電層上の第2の基板と、を有し、
前記発光素子は、前記第1の基板上の第1の電極と、前記第1の電極上の第1の層と、前記第1の層上の第2の電極と、を有し、
前記第1の層は、発光性の有機化合物を有し、
前記第2の電極、前記第1の導電層、及び前記第2の導電層は、互いに電気的に接続し、
前記第1の導電層及び前記第2の電極は、それぞれ前記発光素子が発する光を透過し、
前記第2の導電層の抵抗値は、前記第2の電極の抵抗値よりも低い、発光装置。 - 請求項1において、
前記発光素子と前記第1の導電層の間に接着層を有する、発光装置。 - 請求項1又は2において、
前記第1の基板及び前記第2の基板は、それぞれ可撓性を有する、発光装置。 - 請求項1乃至3のいずれか一項において、
第1のトランジスタを有し、
前記第1のトランジスタは、前記第1の基板及び前記発光素子の間に位置し、
前記第1のトランジスタは、前記発光素子と電気的に接続する、発光装置。 - 請求項1乃至4のいずれか一項において、
着色層を有し、
前記着色層は、前記第1の絶縁層及び前記第1の導電層の間に位置し、
前記着色層は、前記発光素子と重なる、発光装置。 - 請求項1乃至5のいずれか一項において、
第1の遮光層を有し、
前記第1の遮光層は、前記第1の絶縁層及び前記第1の導電層の間に位置し、
前記第1の遮光層は、前記第2の導電層と重なる、発光装置。 - 請求項1乃至6のいずれか一項において、
第2の遮光層を有し、
前記第2の遮光層は、前記第2の基板及び前記第1の導電層の間に位置し、
前記第2の遮光層は、前記第2の導電層と重なる、発光装置。 - 請求項1乃至7のいずれか一項に記載の発光装置、第2のトランジスタ、及び容量素子を有し、
前記第2のトランジスタ及び前記容量素子は、電気的に接続し、
前記第2のトランジスタ及び前記容量素子は、それぞれ前記第1の導電層及び前記第2の基板の間に位置し、
前記第2の導電層は、前記第2のトランジスタのゲート電極、ソース電極、又はドレイン電極と、同一平面上に位置し、同一の材料を有する層である、入出力装置。 - 第1の基板と、
前記第1の基板上の第1のトランジスタと、
前記第1のトランジスタ上の発光素子と、
前記発光素子上の接着層と、
前記接着層上の第1の導電層と、
前記第1の導電層上の第1の絶縁層と、
前記第1の絶縁層上の第2の導電層と、
前記第2の導電層上の第2の基板と、
前記第1の導電層及び前記第2の基板の間の、第2のトランジスタ及び容量素子と、を有し、
前記発光素子は、前記第2の基板側に光を射出し、
前記第1のトランジスタ及び前記発光素子は、電気的に接続し、
前記第2のトランジスタ及び前記容量素子は、電気的に接続し、
前記第1の導電層は、前記発光素子と重なり、
前記第1の導電層は、前記発光素子が発する光を透過し、
前記第1の導電層は、前記第2の導電層と電気的に接続し、
前記第2の導電層は、前記第2のトランジスタのゲート電極、ソース電極、又はドレイン電極と、同一平面上に位置し、同一の材料を有する層であり、
前記第1の導電層に所定の電位を供給することができる、入出力装置。 - 請求項9において、
前記第1の基板及び前記第2の基板は、それぞれ可撓性を有する、入出力装置。 - 請求項9又は10において、
着色層を有し、
前記着色層は、前記第1の絶縁層及び前記第1の導電層の間に位置し、
前記着色層は、前記発光素子と重なる、入出力装置。 - 請求項9乃至11のいずれか一項において、
第1の遮光層を有し、
前記第1の遮光層は、前記第1の絶縁層及び前記第1の導電層の間に位置し、
前記第1の遮光層は、前記第2の導電層と重なる、入出力装置。 - 請求項9乃至12のいずれか一項において、
第2の遮光層を有し、
前記第2の遮光層は、前記第2の基板及び前記第1の導電層の間に位置し、
前記第2の遮光層は、前記第2の導電層と重なる、入出力装置。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020529047A (ja) * | 2017-08-21 | 2020-10-01 | 深▲せん▼市華星光電半導体顕示技術有限公司Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.,Ltd. | フレキシブルディスプレイパネルの製造方法及びフレキシブルディスプレイパネル |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9779588B2 (en) * | 2013-12-19 | 2017-10-03 | Ncr Corporation | Media replenishment management |
TWI765679B (zh) | 2014-05-30 | 2022-05-21 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
JP6518133B2 (ja) | 2014-05-30 | 2019-05-22 | 株式会社半導体エネルギー研究所 | 入力装置 |
US9455281B2 (en) | 2014-06-19 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, touch panel, touch panel module, and display device |
CN106158909B (zh) * | 2015-04-28 | 2019-04-26 | 上海和辉光电有限公司 | 一种显示器件结构及其制备方法 |
DE102016206922A1 (de) | 2015-05-08 | 2016-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Touchscreen |
JP6728152B2 (ja) | 2015-05-28 | 2020-07-22 | 株式会社半導体エネルギー研究所 | タッチパネル |
KR102381647B1 (ko) * | 2015-10-29 | 2022-04-04 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR101730537B1 (ko) | 2015-11-30 | 2017-04-26 | 엘지디스플레이 주식회사 | 표시장치와 그의 제조방법 |
KR102536146B1 (ko) * | 2016-04-07 | 2023-05-24 | 삼성전자주식회사 | 디스플레이 장치, 이를 포함하는 전자 장치 및 이의 동작 방법 |
KR102470044B1 (ko) * | 2016-05-13 | 2022-11-24 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 및 이의 제조 방법 |
JP6595444B2 (ja) * | 2016-08-31 | 2019-10-23 | エルジー ディスプレイ カンパニー リミテッド | 表示装置 |
KR102636734B1 (ko) * | 2016-09-07 | 2024-02-14 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
JP2018063669A (ja) * | 2016-10-14 | 2018-04-19 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2018128106A1 (ja) * | 2017-01-06 | 2018-07-12 | シャープ株式会社 | 湾曲表示パネル |
WO2018128107A1 (ja) * | 2017-01-06 | 2018-07-12 | シャープ株式会社 | 湾曲表示パネル |
CN108336107A (zh) * | 2017-01-19 | 2018-07-27 | 京东方科技集团股份有限公司 | 有机发光二极管(oled)阵列基板及其制备方法、显示装置 |
CN106847827A (zh) * | 2017-02-08 | 2017-06-13 | 京东方科技集团股份有限公司 | 显示基板、显示面板、显示装置及邦定方法 |
CN109085726B (zh) | 2017-06-13 | 2021-10-22 | 元太科技工业股份有限公司 | 可挠性叠层结构及显示器 |
CN107394052B (zh) * | 2017-08-31 | 2024-01-09 | 京东方科技集团股份有限公司 | 一种有机发光二极管器件及其制备方法、显示装置 |
CN109427998B (zh) * | 2017-09-01 | 2020-01-14 | 京东方科技集团股份有限公司 | 用于有机电致发光显示器件的盖板及其制作方法、有机电致发光显示器件以及显示设备 |
JP6942602B2 (ja) * | 2017-10-19 | 2021-09-29 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
KR102528943B1 (ko) * | 2018-09-28 | 2023-05-03 | 엘지디스플레이 주식회사 | 자체 발광소자 |
TWI722331B (zh) * | 2018-11-12 | 2021-03-21 | 友達光電股份有限公司 | 半導體疊層結構及其製造方法 |
KR20200104974A (ko) * | 2019-02-27 | 2020-09-07 | 삼성디스플레이 주식회사 | 표시패널 |
US11355564B2 (en) * | 2019-12-04 | 2022-06-07 | Arolltech Co., Ltd. | AMOLED and micro-OLED for augmented reality and autostereoscopic 3D displays |
US11980046B2 (en) * | 2020-05-27 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming an isolation structure having multiple thicknesses to mitigate damage to a display device |
CN112732129B (zh) * | 2021-01-12 | 2022-11-29 | 业成科技(成都)有限公司 | 触控结构及电子装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010043046A1 (en) * | 2000-05-08 | 2001-11-22 | Takeshi Fukunaga | Luminescent apparatus and method of manufacturing the same |
JP2002033198A (ja) * | 2000-05-08 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
US20050212413A1 (en) * | 2004-03-19 | 2005-09-29 | Hiroyasu Matsuura | Organic electroluminescence display apparatus |
JP2010140919A (ja) * | 2008-12-09 | 2010-06-24 | Hitachi Ltd | 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板 |
JP2011237489A (ja) * | 2010-05-06 | 2011-11-24 | Toshiba Mobile Display Co Ltd | 有機el表示装置 |
JP2013196919A (ja) * | 2012-03-21 | 2013-09-30 | Sony Corp | 有機el表示装置、有機el表示装置の製造方法およびカラーフィルタ基板 |
JP2015187852A (ja) * | 2014-03-13 | 2015-10-29 | 株式会社半導体エネルギー研究所 | タッチパネル |
US20160233458A1 (en) * | 2013-12-31 | 2016-08-11 | Boe Technology Group Co., Ltd. | Organic light emitting display panel and display apparatus |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7663607B2 (en) | 2004-05-06 | 2010-02-16 | Apple Inc. | Multipoint touchscreen |
TW564471B (en) | 2001-07-16 | 2003-12-01 | Semiconductor Energy Lab | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
JP4027740B2 (ja) | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4507480B2 (ja) | 2001-12-27 | 2010-07-21 | ソニー株式会社 | 表示装置 |
US7026658B2 (en) * | 2003-03-13 | 2006-04-11 | Samsung Sdi, Co., Ltd. | Electrical conductors in an electroluminescent display device |
US20050200292A1 (en) | 2004-02-24 | 2005-09-15 | Naugler W. E.Jr. | Emissive display device having sensing for luminance stabilization and user light or touch screen input |
US7812523B2 (en) | 2005-11-15 | 2010-10-12 | Samsung Electronics Co., Ltd. | Display device having an auxiliary electrode for improved common voltage and fabricating method thereof |
JP2007207460A (ja) | 2006-01-31 | 2007-08-16 | Seiko Epson Corp | 有機el装置および電子機器、有機el装置の製造方法 |
CN101305338B (zh) | 2006-03-08 | 2012-04-25 | 夏普株式会社 | 显示装置 |
US8243027B2 (en) | 2006-06-09 | 2012-08-14 | Apple Inc. | Touch screen liquid crystal display |
KR101254644B1 (ko) * | 2006-06-30 | 2013-04-15 | 엘지디스플레이 주식회사 | 유기 전계발광 표시장치와 그의 제조 방법 |
JP4957597B2 (ja) | 2007-05-18 | 2012-06-20 | セイコーエプソン株式会社 | センシング回路、その駆動方法、表示装置および電子機器 |
TWI350474B (en) | 2007-09-29 | 2011-10-11 | Au Optronics Corp | Capacitive touch panel with low impedance and method of manufacturing capacitive touch panels with low impedance |
JP5443679B2 (ja) * | 2007-10-10 | 2014-03-19 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
JP5368014B2 (ja) * | 2008-06-24 | 2013-12-18 | 共同印刷株式会社 | フレキシブル有機elディスプレイの製造方法 |
JP5587591B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
EP2202802B1 (en) | 2008-12-24 | 2012-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
CN102667678A (zh) * | 2009-11-20 | 2012-09-12 | 夏普株式会社 | 带触摸传感器功能的挠性显示面板 |
KR101735386B1 (ko) | 2010-06-25 | 2017-05-30 | 엘지디스플레이 주식회사 | 터치 센서가 내장된 액정 표시 장치 및 그 구동 방법과 그 제조 방법 |
JP5513308B2 (ja) | 2010-08-19 | 2014-06-04 | 株式会社ジャパンディスプレイ | タッチ検出機能付き表示装置、および電子機器 |
TWI427522B (zh) | 2010-09-15 | 2014-02-21 | Au Optronics Corp | 觸碰感測裝置與觸碰感測方法 |
KR20120092019A (ko) | 2011-02-09 | 2012-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
KR101890876B1 (ko) | 2011-03-23 | 2018-08-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치의 제작 방법 |
JP5789113B2 (ja) * | 2011-03-31 | 2015-10-07 | 株式会社Joled | 表示装置および電子機器 |
US9470941B2 (en) | 2011-08-19 | 2016-10-18 | Apple Inc. | In-cell or on-cell touch sensor with color filter on array |
JP6167903B2 (ja) * | 2011-10-26 | 2017-07-26 | 大日本印刷株式会社 | 有機エレクトロルミネッセンス表示装置用カラーフィルタおよび有機エレクトロルミネッセンス表示装置 |
KR101860880B1 (ko) | 2011-11-18 | 2018-05-25 | 삼성디스플레이 주식회사 | 표시 장치 |
WO2013150777A1 (ja) | 2012-04-05 | 2013-10-10 | テルモ株式会社 | 血管挿入型治療デバイス |
KR102079188B1 (ko) | 2012-05-09 | 2020-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
KR102082793B1 (ko) * | 2012-05-10 | 2020-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
US9478590B2 (en) | 2012-05-22 | 2016-10-25 | Superc-Touch Corporation | In-cell OLED touch display panel structure with metal layer for sensing |
TWI669835B (zh) * | 2012-07-05 | 2019-08-21 | 日商半導體能源研究所股份有限公司 | 發光裝置 |
US9535277B2 (en) | 2012-09-05 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Conductive oxide film, display device, and method for forming conductive oxide film |
CN102955636B (zh) | 2012-10-26 | 2015-09-09 | 北京京东方光电科技有限公司 | 一种电容式内嵌触摸屏及显示装置 |
KR102239367B1 (ko) | 2013-11-27 | 2021-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 |
-
2015
- 2015-04-27 JP JP2015090086A patent/JP6596224B2/ja not_active Expired - Fee Related
- 2015-04-30 US US14/700,652 patent/US9859300B2/en active Active
-
2017
- 2017-12-27 US US15/855,074 patent/US10217764B2/en not_active Expired - Fee Related
-
2019
- 2019-09-30 JP JP2019179018A patent/JP6915012B2/ja active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010043046A1 (en) * | 2000-05-08 | 2001-11-22 | Takeshi Fukunaga | Luminescent apparatus and method of manufacturing the same |
JP2002033198A (ja) * | 2000-05-08 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
US20050212413A1 (en) * | 2004-03-19 | 2005-09-29 | Hiroyasu Matsuura | Organic electroluminescence display apparatus |
JP2005268062A (ja) * | 2004-03-19 | 2005-09-29 | Hitachi Displays Ltd | 有機エレクトロルミネッセンス表示装置 |
JP2010140919A (ja) * | 2008-12-09 | 2010-06-24 | Hitachi Ltd | 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板 |
JP2011237489A (ja) * | 2010-05-06 | 2011-11-24 | Toshiba Mobile Display Co Ltd | 有機el表示装置 |
JP2013196919A (ja) * | 2012-03-21 | 2013-09-30 | Sony Corp | 有機el表示装置、有機el表示装置の製造方法およびカラーフィルタ基板 |
US20140077171A1 (en) * | 2012-03-21 | 2014-03-20 | Sony Corporation | Organic electroluminescence display unit, method of manufacturing organic electroluminescence display unit, and color filter substrate |
US20160233458A1 (en) * | 2013-12-31 | 2016-08-11 | Boe Technology Group Co., Ltd. | Organic light emitting display panel and display apparatus |
JP2015187852A (ja) * | 2014-03-13 | 2015-10-29 | 株式会社半導体エネルギー研究所 | タッチパネル |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020529047A (ja) * | 2017-08-21 | 2020-10-01 | 深▲せん▼市華星光電半導体顕示技術有限公司Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.,Ltd. | フレキシブルディスプレイパネルの製造方法及びフレキシブルディスプレイパネル |
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JP6596224B2 (ja) | 2019-10-23 |
JP6915012B2 (ja) | 2021-08-04 |
JP2020079928A (ja) | 2020-05-28 |
US20180138201A1 (en) | 2018-05-17 |
US10217764B2 (en) | 2019-02-26 |
US20150318339A1 (en) | 2015-11-05 |
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