JP2015220382A - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
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- JP2015220382A JP2015220382A JP2014103987A JP2014103987A JP2015220382A JP 2015220382 A JP2015220382 A JP 2015220382A JP 2014103987 A JP2014103987 A JP 2014103987A JP 2014103987 A JP2014103987 A JP 2014103987A JP 2015220382 A JP2015220382 A JP 2015220382A
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- power module
- heat radiating
- radiating member
- module according
- frame member
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052742 iron Inorganic materials 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 238000004382 potting Methods 0.000 claims description 7
- 239000000498 cooling water Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 32
- 230000008646 thermal stress Effects 0.000 abstract description 12
- 230000007774 longterm Effects 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 7
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000005304 joining Methods 0.000 description 23
- 238000007789 sealing Methods 0.000 description 12
- 230000017525 heat dissipation Effects 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910018464 Al—Mg—Si Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45624—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
図1は、この発明の実施の形態1によるパワーモジュール100の断面図であり、図2は、この発明の実施の形態1によるパワーモジュール100の要部を説明するための分解斜視図である。
実施の形態1では、放熱部材1上部の接合ブロック12を矩形としたが、実施の形態2では、接合ブロックにテーパ型を用いた場合について説明する。
実施の形態1および実施の形態2では、ポッティング樹脂72によりパワー半導体素子91、92を絶縁封止する場合について示したが、実施の形態3では、モールド樹脂により絶縁封止する場合について説明する。
Claims (8)
- 半導体素子と、
前記半導体素子が配設される絶縁基板と、
一方の面に前記絶縁基板の裏面と接合する接合部が形成され、他方の面に冷却フィンが形成された放熱部材と
前記放熱部材よりも小さい熱膨張係数を有し、前記接合部の外周に固設される枠材と
を備えたことを特徴とするパワーモジュール。 - 前記接合部は、複数のブロックに分割されており、前記分割された各ブロックのそれぞれの外周に枠材が固設されていることを特徴とする請求項1に記載のパワーモジュール。
- 前記各ブロックの外周は、前記冷却フィンの方向に広がるテーパ状に形成されていることを特徴とする請求項2に記載のパワーモジュール。
- 前記放熱部材は、アルミニウムで形成され、前記枠材は、鉄で形成されていることを特徴とする請求項1から請求項3のいずれか1項に記載のパワーモジュール。
- 前記放熱部材は、前記冷却フィンのみが冷却水により冷却されることを特徴とする請求項1から請求項4のいずれか1項に記載のパワーモジュール。
- 前記半導体素子は、ポッティング樹脂またはモールド樹脂により封止されていることを特徴とする請求項1から請求項5のいずれか1項に記載のパワーモジュール。
- 前記半導体素子は、ワイドバンドギャップ半導体であることを特徴とする請求項1から請求項6のいずれか1項に記載のパワーモジュール。
- 前記ワイドバンドギャップ半導体は、炭化ケイ素、窒化ガリウム系材料または、ダイアモンドを用いた半導体であることを特徴とする請求項7に記載のパワーモジュール。
Priority Applications (1)
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JP2014103987A JP6300633B2 (ja) | 2014-05-20 | 2014-05-20 | パワーモジュール |
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JP2014103987A JP6300633B2 (ja) | 2014-05-20 | 2014-05-20 | パワーモジュール |
Publications (2)
Publication Number | Publication Date |
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JP2015220382A true JP2015220382A (ja) | 2015-12-07 |
JP6300633B2 JP6300633B2 (ja) | 2018-03-28 |
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JP2014103987A Active JP6300633B2 (ja) | 2014-05-20 | 2014-05-20 | パワーモジュール |
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Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106793718A (zh) * | 2017-03-28 | 2017-05-31 | 京东方科技集团股份有限公司 | 移动终端壳体、移动终端 |
JP2018056556A (ja) * | 2016-09-26 | 2018-04-05 | ゼロックス コーポレイションXerox Corporation | 冷却性能を高めるためのdmd基板における集積マイクロチャネルヒートシンク |
WO2018163599A1 (ja) * | 2017-03-08 | 2018-09-13 | 三菱電機株式会社 | 半導体装置、その製造方法および半導体モジュール |
DE112016006908T5 (de) | 2016-05-26 | 2019-02-14 | Mitsubishi Electric Corporation | Leistungshalbleitervorrichtung |
CN110265374A (zh) * | 2016-02-02 | 2019-09-20 | 英飞凌科技股份有限公司 | 功率半导体器件、功率半导体模块和加工方法 |
US10468333B2 (en) | 2018-03-06 | 2019-11-05 | Fuji Electric Co., Ltd. | Cooling apparatus, semiconductor module, and vehicle |
JP2020533796A (ja) * | 2017-09-21 | 2020-11-19 | アマゾン テクノロジーズ インコーポレイテッド | ヒートシンクを備えるプリント回路基板 |
US11158563B2 (en) | 2018-08-13 | 2021-10-26 | Fuji Electric Co., Ltd. | Power semiconductor module and vehicle |
WO2022064599A1 (ja) * | 2020-09-24 | 2022-03-31 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
DE212021000233U1 (de) | 2020-10-14 | 2022-05-17 | Rohm Co., Ltd. | Halbleitermodul |
DE212021000237U1 (de) | 2020-10-14 | 2022-05-19 | Rohm Co., Ltd. | Halbleitermodul |
DE212021000235U1 (de) | 2020-10-14 | 2022-05-19 | Rohm Co., Ltd. | Halbleitermodul |
DE212021000238U1 (de) | 2020-10-14 | 2022-05-19 | Rohm Co., Ltd. | Halbleitermodul |
DE212021000236U1 (de) | 2020-10-14 | 2022-05-19 | Rohm Co., Ltd. | Halbleitermodul |
CN114566468A (zh) * | 2022-04-29 | 2022-05-31 | 深圳正为格智能科技有限公司 | 一种具有防护功能的半导体器件 |
DE212021000239U1 (de) | 2020-10-14 | 2022-06-07 | Rohm Co., Ltd. | Halbleitermodul |
DE112020005132T5 (de) | 2019-10-24 | 2022-07-07 | Rohm Co., Ltd. | Halbleiterbauteil |
DE112022002551T5 (de) | 2021-06-15 | 2024-03-21 | Rohm Co., Ltd. | Halbleiterbauteil |
DE112022003321T5 (de) | 2021-08-10 | 2024-04-18 | Rohm Co., Ltd. | Halbleiterbauteil |
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JP2005191502A (ja) * | 2003-12-26 | 2005-07-14 | Nichicon Corp | 電子部品冷却装置 |
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2014
- 2014-05-20 JP JP2014103987A patent/JP6300633B2/ja active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005191502A (ja) * | 2003-12-26 | 2005-07-14 | Nichicon Corp | 電子部品冷却装置 |
Cited By (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265374B (zh) * | 2016-02-02 | 2022-11-29 | 英飞凌科技股份有限公司 | 功率半导体器件、功率半导体模块和加工方法 |
CN110265374A (zh) * | 2016-02-02 | 2019-09-20 | 英飞凌科技股份有限公司 | 功率半导体器件、功率半导体模块和加工方法 |
US10403559B2 (en) | 2016-05-26 | 2019-09-03 | Mitsubishi Electric Corporation | Power semiconductor device |
DE112016006908T5 (de) | 2016-05-26 | 2019-02-14 | Mitsubishi Electric Corporation | Leistungshalbleitervorrichtung |
JP2018056556A (ja) * | 2016-09-26 | 2018-04-05 | ゼロックス コーポレイションXerox Corporation | 冷却性能を高めるためのdmd基板における集積マイクロチャネルヒートシンク |
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