CN109585385B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN109585385B
CN109585385B CN201811109691.3A CN201811109691A CN109585385B CN 109585385 B CN109585385 B CN 109585385B CN 201811109691 A CN201811109691 A CN 201811109691A CN 109585385 B CN109585385 B CN 109585385B
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resin
semiconductor device
insulation layer
heat sink
resin insulation
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CN109585385A (zh
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田中洋树
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

提供具有对在树脂绝缘层与散热板的接合部的端部产生的裂纹、剥离进行了抑制的树脂绝缘层的半导体装置。本发明涉及的半导体装置设置：散热板(1)；树脂绝缘层(2)，其形成在散热板(1)之上；树脂块(11)，其是以将散热板(1)的端部(1a)和树脂绝缘层(2)的端部(2a)覆盖的方式环状地固接的，由树脂构成；壳体(8)，其配置为将树脂块(11)覆盖；以及封装材料(10)，其填充于壳体(8)的内部。

Description

半导体装置
技术领域
本发明涉及具有散热板的电力用半导体装置。
背景技术
就现有的具有散热板的电力用半导体装置而言，在具有向外部的散热功能的散热板隔着将散热板与装置内部的通电部绝缘的树脂绝缘层形成配线层，该配线层形成有电路图案。在配线层经由焊料而搭载有半导体元件，通过导线键合将半导体元件和配线层连接，呈现为通电部。存在下述技术，即，在树脂绝缘层经由粘接材料而粘接有壳体，通过线膨胀率小的封装树脂对处于壳体内部的通电部进行封装。
(例如，参照专利文献1)
专利文献1：日本特开2005-56873公报
就现有的半导体装置而言，使用与其他部件相比线膨胀率小的半导体元件。由此，在半导体元件与周边部件之间产生由温度变化时的伸缩量的不同导致的变形、应力，但通过线膨胀率小的封装树脂对半导体元件以及半导体元件周边部件进行封装，从而抑制了在半导体元件与周边部件之间产生的变形及应力。
另一方面，就通常具有仅次于半导体芯片的低线膨胀率的树脂绝缘层而言，在构造上无法通过封装树脂进行覆盖。这是由于，在一体型基板的树脂绝缘层的表面涂布粘接材料，通过粘接材料对壳体进行粘接，该一体型基板在散热板隔着树脂绝缘层而搭载了形成了电路图案的配线层，由于封装于半导体装置内部的树脂是在将壳体粘接之后进行封装的，因此虽然与粘接材料相比位于半导体装置内侧的树脂绝缘层的表面被封装树脂覆盖，但无法通过封装树脂覆盖与粘接材料相比位于半导体装置外周侧的树脂绝缘层的端部。因此，无法在树脂绝缘层与散热板的界面处抑制剥离、裂纹。由于电力用半导体装置本身的温度变化不断变大，从而需要抑制树脂绝缘层与散热板的界面的端部处的剥离、裂纹。
发明内容
本发明就是为了解决上述的问题而提出的，其目的在于提供具有能够对在树脂绝缘层与散热板的接合部的端部处产生的剥离、裂纹进行抑制的散热板的半导体装置。
本发明涉及的半导体装置具有：散热基板，其在散热板隔着树脂绝缘层而搭载有形成了电路图案的配线层；壳体，其经由粘接材料与树脂绝缘层粘接；树脂块，其固接于散热板的端部和树脂绝缘层的端部，呈环状，由树脂构成；以及封装材料，其填充于壳体内部。
发明的效果
根据本发明涉及的半导体装置，通过使呈环状的由树脂构成的树脂块固接于散热板的端部和树脂绝缘层的端部，从而能够抑制在半导体装置的动作时产生的温度变化所导致的散热板的端部与树脂绝缘层的端部之间的变形，抑制散热板与树脂绝缘层的界面部的剥离、裂纹。
附图说明
图1是本发明的实施方式1涉及的半导体装置的结构图。
图2是本发明的实施方式1涉及的半导体装置的剖视图。
图3是本发明的实施方式2涉及的半导体装置的结构图。
图4是本发明的实施方式2涉及的半导体装置的剖视图。
图5是本发明的实施方式3涉及的半导体装置的结构图。
图6是本发明的实施方式3涉及的半导体装置的剖视图。
图7是本发明的实施方式4涉及的半导体装置的结构图。
图8是本发明的实施方式4涉及的半导体装置的剖视图。
标号的说明
1 散热板
1a 散热板的端部
1b 散热板的上端
1c 散热板的中端
1d 散热板的下端
2 树脂绝缘层
2a 树脂绝缘层的端部
3 配线层
3a 配线层的端部
4 焊料
5 半导体元件
6 粘接材料
7 端子
8 壳体
9 键合导线
10 封装材料
11 树脂块
100 半导体装置
200 半导体装置
300 半导体装置
400 半导体装置
具体实施方式
实施方式1.
首先，对本发明的实施方式1涉及的半导体装置100的结构进行说明。图1是本发明的实施方式1涉及的半导体装置的结构图。图2是在图1所记载的X-X线处剖断后的剖视图。
半导体装置100具有在由铜构成的散热板1隔着树脂绝缘层2而搭载有配线层3的散热基板，该配线层3形成了电路图案。在配线层3经由焊料4而接合半导体元件5。在树脂绝缘层2经由粘接材料6而接合具有端子7的壳体8。端子7、半导体元件5和配线层3通过键合导线9进行连接，壳体8的内部由封装材料10填充。此外，配线层3的端部3a与散热板1的端部1a及树脂绝缘层2的端部2a相比，位于半导体装置内侧。上述的端部的位置关系具有下述效果，即，确保配线层3与散热板1的沿面距离，提高配线层3与散热板1的绝缘性。散热板1的端部1a和树脂绝缘层2的端部2a为同一平面，以将散热板1的端部1a和树脂绝缘层2的端部2a整周覆盖的方式以环状配置有树脂块11，树脂块11分别固接于散热板1的端部1a和树脂绝缘层2的端部2a。树脂块11由与树脂绝缘层2及散热板1接合性良好的环氧类树脂构成，基于后述的理由，优选构成为杨氏模量大于或等于10[GPa]，线膨胀率小于或等于30×10-6[/K]。
在实施方式1涉及的半导体装置100设置的树脂块11实现下述效果，即，抑制由树脂绝缘层2与散热板1的线膨胀率的不同产生的树脂绝缘层2与散热板1的界面的剥离、裂纹。
首先，对在树脂绝缘层2与散热板1的界面产生剥离、裂纹的机理进行说明。剥离、裂纹是通过应力、变形而产生的，该应力、变形是在半导体装置的温度变化时由树脂绝缘层2与散热板1的线膨胀率的不同产生的。
本实施方式1涉及的半导体装置100进行如下动作，即，在半导体装置动作时将在半导体装置内部产生的热量从配线层3传热，经由树脂绝缘层2通过散热板1进行散热。在散热的过程中，半导体装置100升温。
另一方面，在半导体装置停止动作，通过与上述相同的路径进行散热之后，半导体装置100降温至与外部温度相等的温度。然后，在半导体装置的动作时再次升温。在此之后也反复升温和降温。
在将从升温直至下一次升温为止的热循环设为1个循环的情况下，在树脂绝缘层2与散热板1之间产生与循环数成正比地累积的变形。在累积的变形的大小超过接合强度的情况下，在树脂绝缘层2与散热板1之间的界面产生剥离、裂纹。
接下来，对在半导体装置100设置的树脂块11的作用和效果进行说明。树脂块11固接于呈同一平面的散热板1的端部1a和树脂绝缘层2的端部2a。即，树脂块11的散热板1与树脂绝缘层2的接合面呈现出无凹凸的平坦的面。通过使接合面呈现出无凹凸的平坦的面，从而树脂块11能够在接合面分散地承受从进行伸缩的散热板1及树脂绝缘层2受到的应力，抑制由应力引起的变形，因此能够承受更大的应力。另外，就树脂块11而言，由于试图将接合面保持平坦，因此施加应力以使伸缩量不同的散热板1的端部1a与树脂绝缘层2的端部2a返回至同一平面。
对本实施方式1涉及的半导体装置100的升温时的各部件的伸长动作进行说明。就将由平板构成的部件的外周L[m]升温之后的外周L’[m]而言，如果使用温度变化ΔT[℃]和线膨胀率α[/K]，则近似为L’＝L[1+(α×ΔT)]。
如果将升温前的树脂块11的内周长设为L1[m]，将升温前的散热板1的外周长设为L2[m]，将升温前的树脂绝缘层2的外周长设为L3[m]，则就本发明的实施方式1涉及的半导体装置100而言，成为L1＝L2＝L3。在假定L1＝L2＝L3＝1[m]，将树脂块11的线膨胀率设为A[/K]，将散热板1的线膨胀率设为B[/K]，将树脂绝缘层2的线膨胀率设为C[/K]的情况下，在从25[℃]升温至175[℃]的情况下，如果忽略各个接合部处的应力，则升温后的树脂块11的内周长L1’能够近似为L1’＝1+(A×150)[m]，升温后的散热板1的外周长L2’能够近似为L2’＝1+(B×150)[m]，升温后的树脂绝缘层2的外周长L3’能够近似为L3’＝1+(C×150)[m]。
即，在树脂块11的线膨胀率A比散热板1的线膨胀率B、树脂绝缘层2的线膨胀率C大的情况下，树脂块11的内周长变得比散热板1的外周长及树脂绝缘层2的外周长大。
如果考虑实际接合有各部件的情况，则在散热板1与树脂绝缘层2的接合部处产生应力以使外周长之差变小，因此与前述的公式相比外周长之差变小，但由于伸长时的应力而产生变形，散热板1的端部1a与树脂绝缘层2的端部2a的端部彼此也与变形的量对应地错开。
树脂块11试图使与各所述端部的接合面保持平坦，因此散热板1与树脂绝缘层2的端部各自也以抑制变形的方式作出动作。
在这里，如果考虑树脂块11所需的线膨胀率，则优选树脂块11的线膨胀率小于或等于30×10-6[/K]。由铜构成的散热板1的线膨胀率约为16×10-6[/K]，在将树脂块11的线膨胀率设为大于或等于30×10-6[/K]的情况下，由于伸缩量的不同，有可能在树脂块11与散热板1的界面产生剥离、裂纹。
另一方面，在树脂块11的线膨胀率A比散热板1的线膨胀率B、树脂绝缘层2的线膨胀率C小的情况下，树脂块11的内周长变得比散热板1的外周长、树脂绝缘层2的外周长小。
在上述的情况下，树脂块11向散热板1的端部1a和树脂绝缘层2的端部2a施加向与伸长方向相反侧压入的应力。
树脂块11试图使与各所述端部的接合面保持平坦，因此散热板1与树脂绝缘层2的端部各自也以抑制变形的方式作出动作。
下面，针对树脂块11的线膨胀率A、散热板1的线膨胀率B和树脂绝缘层2的线膨胀率C成为C＜A＜B的情况而对动作进行说明。
在上述的情况下，通过树脂块11将外周长最为伸长的散热板1的端部1a向与伸长方向相反侧压入，将外周长伸长最小的树脂绝缘层2的端部2a向与伸长方向相反侧拉拽，从而树脂块11试图使与各所述端部的接合面保持平坦。
接下来，对降温时的动作进行说明。降温后的由平板构成的部件的外周由L’＝L[1+(α×ΔT)]表示。如果将降温前的树脂块11的内周长设为L1[m]，将降温前的散热板1的外周长设为L2[m]，将降温前的树脂绝缘层2的外周长设为L3[m]，则就本发明的实施方式1涉及的半导体装置100而言，成为L1＝L2＝L3。如果假定L1＝L2＝L3＝1[m]，将树脂块11的线膨胀率假定为A[/K]，将散热板1的线膨胀率假定为B[/K]，将树脂绝缘层2的线膨胀率假定为C[/K]，则在从175[℃]降温至25[℃]的情况下，如果忽略各个接合部处的应力，则降温后的树脂块11的内周长L1’能够近似为L1’＝1－(A×150)[m]，降温后的散热板1的外周长L2’能够近似为L2’＝1－(B×150)[m]，降温后的树脂绝缘层2的外周长L3’能够近似为L3’＝1－(C×150)[m]。
在树脂块11的线膨胀率A比散热板1的线膨胀率B、树脂绝缘层2的线膨胀率C大的情况下，树脂块11的内周长变得比散热板1的外周长、树脂绝缘层2的外周长小，成为与升温时逆转的关系。
即，降温时的树脂块11的线膨胀率A比散热板1的线膨胀率B、树脂绝缘层2的线膨胀率C大的情况下的动作与升温时的树脂块11的线膨胀率A比散热板1的线膨胀率B、树脂绝缘层2的线膨胀率C小的情况下的动作相同。
同样地，降温时的树脂块11的线膨胀率A比散热板1的线膨胀率B、树脂绝缘层2的线膨胀率C小的情况下的动作与升温时的树脂块11的线膨胀率A比散热板1的线膨胀率B、树脂绝缘层2的线膨胀率C大的情况下的动作相同。
下面，对于降温时的树脂块11的线膨胀率A、散热板1的线膨胀率B和树脂绝缘层2的线膨胀率C成为C＜A＜B的情况，也能够根据前述的相同条件时的升温时的动作说明，通过使应力方向逆转而对动作进行说明。
接下来，针对本实施方式1涉及的半导体装置100涉及的树脂块11的对在散热板1的端部1a和树脂绝缘层2的端部2a产生的变形的抑制力进行说明。树脂块11的对变形的抑制力受到树脂块11的杨氏模量的影响。树脂块11的杨氏模量越高，对变形的抑制力变得越高。
树脂绝缘层2的杨氏模量与铜相比极小，树脂绝缘层2的伸缩量的抑制较容易。因此，如果从与散热板1的杨氏模量的比率考虑，则树脂块11所要求的杨氏模量优选最少为大于或等于10GPa。
由此，在温度变化时，无论树脂块11的线膨胀率、散热板1的线膨胀率和树脂绝缘层2的线膨胀率处于何种关系，树脂块11都作出对在散热板1的端部1a和树脂绝缘层2的端部2a产生的变形进行抑制的动作。
接下来，对具有树脂块11的散热基板的成型方法进行说明。树脂块11通过注塑成型而成型，固接于散热板1的端部1a及树脂绝缘层2的端部2a。
首先，准备在散热板1隔着树脂绝缘层2而搭载有由导体形成的配线层3的一体型树脂绝缘基板。然后，将一体型树脂绝缘基板设置于与具有树脂块11的散热基板的外形相匹配地加工出的模具，将高温熔化的环氧类树脂注射至模具内。通过冷却、使树脂固化之后取出，从而得到具有树脂块11的散热基板。
对于使用具有树脂块11的散热基板而对半导体装置100进行制造的方法，由于能够以现有技术进行制造，因此省略说明。
这样，根据本实施方式1涉及的半导体装置100，通过将散热板1的端部1a与树脂绝缘层2的端部2a这些端部设为同一平面，以将其整周覆盖的方式以环状配置树脂块11，从而能够抑制在温度变化时产生的散热板1的端部1a与树脂绝缘层2的端部2a的变形。
实施方式2.
图3是本发明的实施方式2涉及的半导体装置的结构图。图4是在图3所记载的X-X线处剖断后的剖视图。实施方式2涉及的半导体装置200与实施方式1涉及的半导体装置的不同之处在于，散热板1的端部的形状和树脂块11的形状。此外，在本发明的实施方式2中，省略针对与本发明的实施方式1相同或对应的部分的说明。
就在本发明的实施方式2涉及的半导体装置200搭载的散热板1的端部而言，散热板1的上端1b、散热板1的中端1c、散热板1的下端1d形成为在端部侧面的中央部成为凸部，树脂绝缘层2的端部2a和散热板1的上端1b位于同一平面。树脂块11具有与上述的凸部对应的凹部而以环状固接于树脂绝缘层2的端部2a、散热板1的上端1b、中端1c和下端1d。
接下来，对实施方式2涉及的半导体装置200的作用和效果进行说明。散热板1的端部形成为在端部侧面的中央部成为凸部，利用具有与凸部对应的凹部的树脂块11进行覆盖，从而能够增强散热板1与树脂块11的接合力，抑制在散热板1与树脂块11的界面处的剥离、裂纹。另外，通过将树脂绝缘层2的端部2a和散热板1的上端1b配置在同一平面，从而能够抑制在伸缩时产生的应力的集中，树脂块11以将树脂绝缘层2的端部2a和散热板1的上端1b保持在同一平面的方式作出动作。
这样，根据本实施方式2涉及的半导体装置200，通过使散热板1的上端1b和树脂绝缘层2的端部2a为同一平面，在散热板1的以端部侧面的中央部成为凸部的方式而形成的端部和树脂绝缘层2的端部2a以将整周覆盖的方式环状地配置具有与凸部对应的凹部的树脂块11，从而抑制了在温度变化时产生的散热板1的上端1b和树脂绝缘层2的端部2a的变形，由此实现抑制树脂绝缘层2与散热板1的界面的剥离、裂纹的效果。
实施方式3.
图5是本发明的实施方式3涉及的半导体装置的结构图。图6是在图5所记载的X-X线处剖断后的剖视图。实施方式3涉及的半导体装置300与实施方式1涉及的半导体装置的不同之处在于，粘接材料6的配置位置。
在实施方式1涉及的半导体装置100中，在树脂绝缘层2经由焊料4而粘接有壳体8，与此相对，在本发明的实施方式3涉及的半导体装置300中，在树脂块11经由粘接材料6而粘接壳体8。
接下来，对实施方式3涉及的半导体装置300的作用和效果进行说明。就实施方式3涉及的半导体装置300而言，与实施方式1相比，能够提高针对树脂绝缘层2与散热板1的剥离、裂纹的抑制力。
作为使树脂绝缘层2与散热板1的界面的剥离、裂纹得以产生的应力，存在下述应力，即，由前述的树脂绝缘层2与散热板1的线膨胀率的不同产生的应力和从与树脂绝缘层2相邻的壳体8及封装材料10受到的应力。本发明的实施方式1及本发明的实施方式2涉及的半导体装置能够抑制前者的应力，但本发明的实施方式3涉及的半导体装置300能够抑制后者的特别是从壳体8受到的应力。
具体而言，针对本发明的实施方式3涉及的半导体装置300的、树脂绝缘层2从壳体8受到的应力的抑制作用进行说明。
上述的抑制作用是由于图2与图6的粘接材料6的配置部位的不同而获得的，该图2是本发明的实施方式1涉及的半导体装置100的剖视图，该图6是本发明的实施方式3涉及的半导体装置300的剖视图。
在温度变化时，壳体8发生伸缩。就本发明的实施方式1涉及的半导体装置100而言，在壳体8发生了伸缩的情况下，壳体8将应力分散成2个路径而传递。一个是经由粘接材料6而将应力传递至树脂绝缘层2的路径，另一个是经由封装材料10而将应力传递至树脂绝缘层2的路径。另一方面，就本发明的实施方式3涉及的半导体装置300而言，在壳体8发生了伸缩的情况下，将应力分散至下述路径而进行传递，即，经由粘接材料6而将应力传递至树脂块11的路径和经由封装材料10而将应力传递至树脂绝缘层2的路径。
即，在本发明的实施方式1涉及的半导体装置100中，由与散热板1的界面对剥离、裂纹的影响度高的树脂绝缘层2承受壳体8从2个路径传递的应力，与此相对，在本发明的实施方式3涉及的半导体装置300中，由树脂绝缘层2和与散热板1的界面对剥离、裂纹的影响度低的树脂块11分散地承受壳体8所传递的应力。由此，由树脂绝缘层2和与散热板1的界面对剥离、裂纹的影响度低的树脂块11分散地承受壳体8所传递的应力，因此本发明的实施方式3涉及的半导体装置300能够抑制树脂绝缘层2与散热板1的界面的剥离、裂纹。
实施方式4.
图7是本发明的实施方式4涉及的半导体装置的结构图。图8是在图7所记载的X-X线处剖断后的剖视图。实施方式4涉及的半导体装置400与实施方式1涉及的半导体装置的不同之处在于，树脂块11的形状。
就本发明的实施方式4涉及的半导体装置400而言，在实施方式1涉及的半导体装置100中，以将散热板1的端部1a和树脂绝缘层2的端部2a整周覆盖的方式环状地配置有树脂块11，与此相对，发明的实施方式3涉及的半导体装置400是以将散热板1的端部1a和树脂绝缘层2的端部2a整周覆盖，并且将树脂绝缘层2的表面的外周侧也覆盖的方式环状地配置树脂块11。根据需要，在壳体8设置凹陷，以在粘接之后，与树脂块11嵌合。
接下来，对实施方式4涉及的半导体装置400的作用和效果进行说明。就实施方式4涉及的半导体装置400而言，以将散热板1的端部1a和树脂绝缘层2的端部2a整周覆盖，并且将树脂绝缘层2的表面的外周侧也覆盖的方式环状地配置树脂块11。通过利用树脂块11将树脂绝缘层2的表面覆盖，从而能够增加树脂绝缘层2与树脂块11的接合力，抑制树脂绝缘层2与树脂块11的界面处的剥离、裂纹。另外，即使在本发明的实施方式3所记载的壳体8及封装材料10产生对树脂绝缘层2进行拉拽的应力的情况下，也能够抑制以在树脂绝缘层2与散热板1的界面处产生剥离、裂纹的方式而移动。由此，与实施方式1相比，能够提高针对树脂绝缘层2与散热板1的剥离、裂纹的抑制力。
在本发明的实施方式1～4中，也能够由SiC构成半导体元件5。SiC半导体元件与Si半导体元件相比导热率高，根据该特征，使用了SiC半导体元件的半导体装置与Si半导体装置相比，能够实现在高温动作下的使用。在高温动作时，由于构成半导体装置的各部件间的线膨胀率的不同，在各部件间产生的应力和变形变大，由此在由SiC半导体元件构成半导体元件5的情况下，本发明有效地发挥作用。
对于本发明的实施方式1～4，能够通过将各个实施方式组合，从而提高针对树脂绝缘层2与散热板1的剥离、裂纹的抑制力。
在本发明的实施方式1～4中，树脂块11并不是必须将散热板1的端部1a和树脂绝缘层2的端部2a整周覆盖，也可以根据需要设置间隔。
在本发明的实施方式1～4中，在将封装材料10设为环氧类树脂的情况下，有效地发挥作用。环氧类树脂和树脂绝缘层2的接合力高，且环氧类树脂的杨氏模量高，由此将树脂绝缘层2相对于散热板1以产生剥离、裂纹的方式进行拉拽的应力强。在这种情况下，能够实现对树脂绝缘层2与散热板1的界面的剥离、裂纹的抑制的本发明会有效地发挥作用。

Claims (6)

1.一种半导体装置，其具有：
散热板；
树脂绝缘层，其形成在所述散热板之上；
树脂块，其是以将所述散热板的端部和所述树脂绝缘层的端部无间隙地覆盖的方式环状地固接的，由树脂构成；
壳体，其将所述树脂块覆盖；以及
封装材料，其填充于所述壳体内部。
2.根据权利要求1所述的半导体装置，其特征在于，
所述散热板的端部呈在端部侧面的中央部成为凸部的形状，
所述树脂块具有与所述端部侧面的凸形状对应的凹部。
3.根据权利要求1或2所述的半导体装置，其特征在于，
所述树脂块是以将所述树脂绝缘层的表面的一部分也无间隙地覆盖的方式固接的。
4.根据权利要求1或2所述的半导体装置，其特征在于，
所述壳体经由粘接材料而与所述树脂块粘接。
5.根据权利要求1或2所述的半导体装置，其特征在于，
所述封装材料由环氧类树脂构成。
6.根据权利要求1或2所述的半导体装置，其特征在于，
在所述树脂绝缘层之上形成配线层，
所述半导体装置还具有半导体元件，该半导体元件经由焊料而与所述配线层接合，由SiC构成。
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