JP2015219196A - 放射線像変換パネルの製造方法及び放射線像変換パネル - Google Patents
放射線像変換パネルの製造方法及び放射線像変換パネル Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 79
- 230000005855 radiation Effects 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 40
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical class [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 30
- 239000011147 inorganic material Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 6
- 206010073306 Exposure to radiation Diseases 0.000 claims description 4
- 238000000576 coating method Methods 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 description 128
- 239000007789 gas Substances 0.000 description 21
- 238000012545 processing Methods 0.000 description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 13
- 238000012546 transfer Methods 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 7
- 230000000644 propagated effect Effects 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
- G21K2004/06—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens with a phosphor layer
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
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Abstract
Description
Claims (11)
- 放射線の露光により発光する蛍光物質を含む蛍光体層を備える放射線像変換パネルの製造方法であって、基材の一方の面に蛍光物質を柱状に夫々形成して一群の柱状構造で構成される蛍光体層を得る工程を含むものにおいて、
柱状構造の外表面を、互いに隣り合う柱状構造間に隙間を残して所定波長の光を反射する反射膜で夫々覆う反射膜形成工程を更に含み、前記隙間の屈折率が前記柱状構造の屈折率より低い場合、反射膜が、前記柱状構造の屈折率より高い屈折率の無機材料で構成されることを特徴とする放射線像変換パネルの製造方法。 - 請求項1記載の放射線像変換パネルの製造方法であって、前記柱状構造が潮解性を有するものにおいて、
前記反射膜形成工程に先立ち、柱状構造の外表面を防湿膜で覆う防湿膜形成工程を更に有し、防湿膜が、前記反射膜の屈折率より低い屈折率の無機材料で構成されることを特徴とする放射線像変換パネルの製造方法。 - 放射線の露光により発光する蛍光物質を含む蛍光体層を備える放射線像変換パネルの製造方法であって、基材の一方の面に蛍光物質を柱状に夫々形成して一群の柱状構造で構成される蛍光体層を得る工程を含むものにおいて、
柱状構造の外表面を、互いに隣り合う柱状構造間に隙間を残して所定波長の光を反射する反射膜で夫々覆う反射膜形成工程を更に含み、前記隙間の屈折率が前記柱状構造の屈折率より高い場合、反射膜が、前記柱状構造の屈折率より低い屈折率の無機材料で構成されることを特徴とする放射線像変換パネルの製造方法。 - 前記隙間に前記柱状構造よりも高い屈折率の反射材を充填する工程を更に含むことを特徴とする請求項3記載の放射線像変換パネルの製造方法。
- 請求項3又は4記載の放射線像変換パネルの製造方法であって、前記柱状構造が潮解性を有するものにおいて、
前記反射膜形成工程に先立ち、柱状構造の外表面を防湿膜で覆う防湿膜形成工程を更に有し、防湿膜が、前記反射膜の屈折率より高い屈折率の無機材料で構成されることを特徴とする放射線像変換パネルの製造方法。 - 前記反射膜形成工程にて、原子層堆積法によって前記反射膜を形成することを特徴とする請求項1〜5の何れか1項記載の放射線像変換パネルの製造方法。
- 基材と、基材の一方の面に夫々蛍光物質が柱状に形成してなる一群の柱状構造で構成される蛍光体層とを備える放射線像変換パネルにおいて、
柱状構造の外表面を夫々覆う、所定波長の光を反射する反射膜を更に備え、互いに隣り合う柱状構造間の隙間の屈折率より柱状構造の屈折率が高い場合、反射膜が、前記柱状構造の屈折率より高い屈折率の無機材料で構成されることを特徴とする放射線像変換パネル。 - 請求項7記載の放射線像変換パネルであって、前記柱状構造が潮解性を有するものにおいて、
柱状構造の外表面と反射膜との間に、柱状構造の外表面を覆う防湿膜を更に備え、防湿膜が、前記反射膜の屈折率よりも低い屈折率の無機材料で構成されることを特徴とする放射線像変換パネル。 - 基材と、基材の一方の面に夫々蛍光物質が柱状に形成してなる一群の柱状構造で構成される蛍光体層とを備える放射線像変換パネルにおいて、
柱状構造の外表面を夫々覆う、所定波長の光を反射する反射膜を更に備え、互いに隣り合う柱状構造間の隙間の屈折率より柱状構造の屈折率が低い場合、反射膜が、前記柱状構造の屈折率より低い屈折率の無機材料で構成されることを特徴とする放射線像変換パネル。 - 前記隙間に充填される、前記柱状構造よりも高い屈折率の反射材を更に備えることを特徴とする請求項9記載の放射線像変換パネル。
- 請求項9又は10記載の放射線像変換パネルであって、前記柱状構造が潮解性を有するものにおいて、
柱状構造の外表面と反射膜との間に、柱状構造の外表面を覆う防湿膜を更に備え、防湿膜が、前記反射膜の屈折率よりも高い屈折率の無機材料で構成されることを特徴とする放射線像変換パネル。
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US14/713,681 US9851453B2 (en) | 2014-05-20 | 2015-05-15 | Method of manufacturing radiological image conversion panel and radiological image conversion panel |
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JP2016095189A (ja) * | 2014-11-13 | 2016-05-26 | コニカミノルタ株式会社 | シンチレータパネル及び放射線検出器 |
JP2018513982A (ja) * | 2015-03-20 | 2018-05-31 | ヴァレックス イメージング コーポレイション | シンチレータ |
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IL260956B (en) * | 2018-08-02 | 2022-01-01 | Applied Materials Israel Ltd | Electron detection sensor |
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JPH05203755A (ja) * | 1991-09-23 | 1993-08-10 | General Electric Co <Ge> | 光収集効率を高めた光検出器シンチレータ放射線撮像装置 |
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JP2016095189A (ja) * | 2014-11-13 | 2016-05-26 | コニカミノルタ株式会社 | シンチレータパネル及び放射線検出器 |
JP2018513982A (ja) * | 2015-03-20 | 2018-05-31 | ヴァレックス イメージング コーポレイション | シンチレータ |
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