JP2015214448A5 - - Google Patents

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Publication number
JP2015214448A5
JP2015214448A5 JP2014097751A JP2014097751A JP2015214448A5 JP 2015214448 A5 JP2015214448 A5 JP 2015214448A5 JP 2014097751 A JP2014097751 A JP 2014097751A JP 2014097751 A JP2014097751 A JP 2014097751A JP 2015214448 A5 JP2015214448 A5 JP 2015214448A5
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JP
Japan
Prior art keywords
semiconductor substrate
single crystal
angle
epitaxial
manufacturing
Prior art date
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JP2014097751A
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English (en)
Japanese (ja)
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JP2015214448A (ja
JP6253150B2 (ja
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Publication date
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Priority claimed from JP2014097751A external-priority patent/JP6253150B2/ja
Priority to JP2014097751A priority Critical patent/JP6253150B2/ja
Priority to PCT/JP2015/063523 priority patent/WO2015170774A1/ja
Priority to US15/309,956 priority patent/US10676841B2/en
Priority to EP15789328.0A priority patent/EP3141635B1/en
Priority to TW104114927A priority patent/TWI721945B/zh
Priority to CN201580024046.XA priority patent/CN106471163B/zh
Publication of JP2015214448A publication Critical patent/JP2015214448A/ja
Publication of JP2015214448A5 publication Critical patent/JP2015214448A5/ja
Publication of JP6253150B2 publication Critical patent/JP6253150B2/ja
Application granted granted Critical
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JP2014097751A 2014-05-09 2014-05-09 エピタキシャルウエハ及びその製造方法 Active JP6253150B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014097751A JP6253150B2 (ja) 2014-05-09 2014-05-09 エピタキシャルウエハ及びその製造方法
TW104114927A TWI721945B (zh) 2014-05-09 2015-05-11 半導體基板、以及磊晶晶圓及其製造方法
US15/309,956 US10676841B2 (en) 2014-05-09 2015-05-11 Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
EP15789328.0A EP3141635B1 (en) 2014-05-09 2015-05-11 Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
PCT/JP2015/063523 WO2015170774A1 (ja) 2014-05-09 2015-05-11 半導体基板、並びにエピタキシャルウエハ及びその製造方法
CN201580024046.XA CN106471163B (zh) 2014-05-09 2015-05-11 半导体衬底、外延片及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014097751A JP6253150B2 (ja) 2014-05-09 2014-05-09 エピタキシャルウエハ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015214448A JP2015214448A (ja) 2015-12-03
JP2015214448A5 true JP2015214448A5 (OSRAM) 2017-08-10
JP6253150B2 JP6253150B2 (ja) 2017-12-27

Family

ID=54392621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014097751A Active JP6253150B2 (ja) 2014-05-09 2014-05-09 エピタキシャルウエハ及びその製造方法

Country Status (6)

Country Link
US (1) US10676841B2 (OSRAM)
EP (1) EP3141635B1 (OSRAM)
JP (1) JP6253150B2 (OSRAM)
CN (1) CN106471163B (OSRAM)
TW (1) TWI721945B (OSRAM)
WO (1) WO2015170774A1 (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5984069B2 (ja) * 2013-09-30 2016-09-06 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体
JP6744523B2 (ja) * 2015-12-16 2020-08-19 株式会社タムラ製作所 半導体基板、並びにエピタキシャルウエハ及びその製造方法
WO2020194763A1 (ja) * 2019-03-28 2020-10-01 日本碍子株式会社 半導体膜
CN113394079A (zh) * 2021-06-18 2021-09-14 中国电子科技集团公司第四十六研究所 一种采用卤化物气相外延法生长氧化镓外延层的方法
CN117941041A (zh) * 2021-09-03 2024-04-26 三菱电机株式会社 晶体层叠构造体、半导体装置及晶体层叠构造体的制造方法
JPWO2024048710A1 (OSRAM) * 2022-08-31 2024-03-07

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7008839B2 (en) * 2002-03-08 2006-03-07 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor thin film
US20070134833A1 (en) 2005-12-14 2007-06-14 Toyoda Gosei Co., Ltd. Semiconductor element and method of making same
JP4680762B2 (ja) 2005-12-14 2011-05-11 株式会社光波 発光素子及びその製造方法
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
KR100969127B1 (ko) * 2010-02-18 2010-07-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN101967680B (zh) * 2010-11-04 2012-02-01 山东大学 一种在氧化镁衬底上制备单斜晶型氧化镓单晶薄膜的方法
JP5612216B2 (ja) * 2011-09-08 2014-10-22 株式会社タムラ製作所 結晶積層構造体及びその製造方法
US9437689B2 (en) 2011-09-08 2016-09-06 Tamura Corporation Ga2O3 semiconductor element
WO2013035472A1 (ja) 2011-09-08 2013-03-14 株式会社タムラ製作所 エピタキシャル成長用基板及び結晶積層構造体
EP2765610B1 (en) * 2011-09-08 2018-12-26 Tamura Corporation Ga2o3 semiconductor element
JP2013229554A (ja) * 2012-03-30 2013-11-07 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物半導体結晶の製造方法、それに用いるノズルおよび製造装置
JP2013227202A (ja) * 2012-03-30 2013-11-07 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物半導体結晶の製造方法、および、当該製造方法によって得られた周期表第１３族金属窒化物半導体結晶を用いた半導体発光デバイス
CN103489967B (zh) * 2013-09-05 2016-07-13 大连理工大学 一种氧化镓外延膜的制备方法及氧化镓外延膜
JP5984069B2 (ja) 2013-09-30 2016-09-06 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体

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