JP2015213175A - トンネル電界効果トランジスタ - Google Patents
トンネル電界効果トランジスタ Download PDFInfo
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- JP2015213175A JP2015213175A JP2015108813A JP2015108813A JP2015213175A JP 2015213175 A JP2015213175 A JP 2015213175A JP 2015108813 A JP2015108813 A JP 2015108813A JP 2015108813 A JP2015108813 A JP 2015108813A JP 2015213175 A JP2015213175 A JP 2015213175A
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- 230000005669 field effect Effects 0.000 title claims abstract description 47
- 230000007704 transition Effects 0.000 claims abstract description 45
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical group [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 14
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910000967 As alloy Inorganic materials 0.000 claims description 11
- 229910052787 antimony Inorganic materials 0.000 claims description 10
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 10
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- -1 arsenide Chemical compound 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical group [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 3
- 239000002140 antimony alloy Substances 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 43
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
Abstract
【解決手段】マイクロ電子トランジスタとして利用可能なトンネル電界効果トランジスタ200であって、トンネル電界効果トランジスタ200は、ソース構造110と真性チャネル130との間に遷移層(トンネル層)210が追加的に形成されている。
【選択図】図2
Description
Claims (18)
- ソース構造と、
複数の層から形成され前記ソース構造に隣接する遷移層と、
前記遷移層に隣接する真性チャネル層と、
前記真性チャネル層に隣接するドレイン構造と
を備え、
前記遷移層は、前記ソース構造および前記真性チャネル層における前記遷移層との近接部分よりも伝導帯のエネルギー準位が低く、
前記複数の層における第1の層は、前記ソース構造に隣接してヘテロ接合を形成し、
前記複数の層における第2の層は、前記真性チャネル層に隣接してヘテロ接合を形成し、
前記第1の層は、前記第2の層を前記ソース構造から分離させ、
前記第2の層は、前記第1の層を前記真性チャネル層から分離させ、
前記遷移層は、前記第1の層および前記第2の層の間のヘテロ接合を有する、トンネル電界効果トランジスタ。 - 前記ソース構造は、アルミ、アンチモン、ヒ化物、ガリウム、インジウム、窒素、またはリンの合金である、請求項1に記載のトンネル電界効果トランジスタ。
- 前記ソース構造はガリウム/ヒ素/アンチモン合金である、請求項2に記載のトンネル電界効果トランジスタ。
- 前記ソース構造はインジウム/ガリウム/ヒ素合金である、請求項2に記載のトンネル電界効果トランジスタ。
- 前記遷移層は、アルミ、アンチモン、ヒ化物、ガリウム、インジウム、窒素、またはリンの合金である、請求項1から4のいずれか1項に記載のトンネル電界効果トランジスタ。
- 前記第1の層および前記第2の層の少なくとも一方はヒ化インジウムである、請求項5に記載のトンネル電界効果トランジスタ。
- 前記第1の層および前記第2の層の少なくとも一方はインジウム/ガリウム/ヒ素合金である、請求項5に記載のトンネル電界効果トランジスタ。
- 前記真性チャネル層は、アルミ、アンチモン、ヒ化物、ガリウム、インジウム、窒素、またはリンの合金である、請求項1から7のいずれか1項に記載のトンネル電界効果トランジスタ。
- 前記真性チャネル層はリン化インジウムである、請求項2から8のいずれか1項に記載のトンネル電界効果トランジスタ。
- プロセッサと、
前記プロセッサとデータ通信を行うメモリデバイスと
を備え、
前記プロセッサおよび前記メモリデバイスのうち少なくとも一方が、1以上のトンネル電界効果トランジスタを有し、
前記1以上のトンネル電界効果トランジスタは、
ソース構造と、
複数の層から形成され前記ソース構造に隣接する遷移層と、
前記遷移層に隣接する真性チャネル層と、
前記真性チャネル層に隣接するドレイン構造と
を含み、
前記遷移層は、前記ソース構造および前記真性チャネル層における前記遷移層との近接部分よりも伝導帯のエネルギー準位が低く、
前記複数の層における第1の層は、前記ソース構造に隣接してヘテロ接合を形成し、
前記複数の層における第2の層は、前記真性チャネル層に隣接してヘテロ接合を形成し、
前記第1の層は、前記第2の層を前記ソース構造から分離させ、
前記第2の層は、前記第1の層を前記真性チャネル層から分離させ、
前記遷移層は、前記第1の層および前記第2の層の間のヘテロ接合を有する、電子システム。 - 前記ソース構造は、アルミ、アンチモン、ヒ化物、ガリウム、インジウム、窒素、またはリンの合金である、請求項10に記載の電子システム。
- 前記ソース構造はガリウム/ヒ素/アンチモン合金である、請求項11に記載の電子システム。
- 前記ソース構造はインジウム/ガリウム/ヒ素合金である、請求項11に記載の電子システム。
- 前記遷移層は、アルミ、アンチモン、ヒ化物、ガリウム、インジウム、窒素、またはリンの合金である、請求項10から13のいずれか1項に記載の電子システム。
- 前記第1の層および前記第2の層の少なくとも一方はヒ化インジウムである、請求項14に記載の電子システム。
- 前記第1の層および前記第2の層の少なくとも一方はインジウム/ガリウム/ヒ素合金である、請求項14に記載の電子システム。
- 前記真性チャネル層は、アルミ、アンチモン、ヒ化物、ガリウム、インジウム、窒素、またはリンの合金である、請求項10から16のいずれか1項に記載の電子システム。
- 前記真性チャネル層はリン化インジウムである、請求項11から17のいずれか1項に記載の電子システム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/972,057 US8890118B2 (en) | 2010-12-17 | 2010-12-17 | Tunnel field effect transistor |
US12/972,057 | 2010-12-17 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013543189A Division JP5757594B2 (ja) | 2010-12-17 | 2011-11-22 | トンネル電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015213175A true JP2015213175A (ja) | 2015-11-26 |
JP6045636B2 JP6045636B2 (ja) | 2016-12-14 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013543189A Expired - Fee Related JP5757594B2 (ja) | 2010-12-17 | 2011-11-22 | トンネル電界効果トランジスタ |
JP2015108813A Expired - Fee Related JP6045636B2 (ja) | 2010-12-17 | 2015-05-28 | トンネル電界効果トランジスタ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013543189A Expired - Fee Related JP5757594B2 (ja) | 2010-12-17 | 2011-11-22 | トンネル電界効果トランジスタ |
Country Status (8)
Country | Link |
---|---|
US (1) | US8890118B2 (ja) |
EP (1) | EP2652790A4 (ja) |
JP (2) | JP5757594B2 (ja) |
KR (1) | KR101487634B1 (ja) |
CN (1) | CN103262249B (ja) |
SG (1) | SG191001A1 (ja) |
TW (1) | TWI476920B (ja) |
WO (1) | WO2012082329A2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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US8890118B2 (en) | 2010-12-17 | 2014-11-18 | Intel Corporation | Tunnel field effect transistor |
JP2013038336A (ja) * | 2011-08-10 | 2013-02-21 | Toshiba Corp | 半導体装置 |
TWI556430B (zh) | 2013-07-16 | 2016-11-01 | 國立清華大學 | 非對稱閘極的穿隧式電晶體 |
JP6331375B2 (ja) * | 2013-12-17 | 2018-05-30 | 富士通株式会社 | 電界効果型半導体装置 |
WO2015099686A1 (en) * | 2013-12-23 | 2015-07-02 | Intel Corporation | Heterogeneous pocket for tunneling field effect transistors (tfets) |
KR20150085663A (ko) * | 2014-01-16 | 2015-07-24 | 삼성전자주식회사 | 터널링 전계 효과 트랜지스터 |
EP3123522A4 (en) * | 2014-03-27 | 2017-11-22 | Intel Corporation | Multiplexor logic functions implemented with circuits having tunneling field effect transistors (tfets) |
CN106062967B (zh) * | 2014-03-27 | 2019-12-31 | 英特尔公司 | 具有袋状部的p隧穿场效应晶体管器件 |
EP2993696B1 (en) | 2014-09-02 | 2020-08-05 | IMEC vzw | Heterosection tunnel field-effect transistor (TFET) |
EP3010044B1 (en) * | 2014-10-13 | 2019-02-13 | IMEC vzw | Layered structure of a p-TFET |
JP6429688B2 (ja) * | 2015-03-12 | 2018-11-28 | 国立研究開発法人物質・材料研究機構 | トンネル電界効果トランジスタ及びその使用方法 |
KR101703657B1 (ko) | 2015-04-17 | 2017-02-08 | 서울시립대학교 산학협력단 | 전계 강화 터널 전계 효과 트랜지스터 |
KR101639260B1 (ko) | 2015-05-07 | 2016-07-13 | 서울시립대학교 산학협력단 | 하이브리드 반도체 소자 및 그 제조 방법 |
CN105047719B (zh) * | 2015-08-11 | 2018-03-06 | 西安电子科技大学 | 基于InAsN‑GaAsSb材料的交错型异质结隧穿场效应晶体管 |
WO2017088186A1 (zh) * | 2015-11-27 | 2017-06-01 | 华为技术有限公司 | 隧穿场效应晶体管及其制造方法 |
US11264452B2 (en) * | 2015-12-29 | 2022-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hetero-tunnel field-effect transistor (TFET) having a tunnel barrier formed directly above channel region, directly below first source/drain region and adjacent gate electrode |
CN106783986B (zh) * | 2016-11-29 | 2020-06-26 | 林伟 | 一种硅基异质结遂穿场效应晶体管 |
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2010
- 2010-12-17 US US12/972,057 patent/US8890118B2/en not_active Expired - Fee Related
-
2011
- 2011-11-22 SG SG2013043294A patent/SG191001A1/en unknown
- 2011-11-22 WO PCT/US2011/061792 patent/WO2012082329A2/en unknown
- 2011-11-22 CN CN201180060425.6A patent/CN103262249B/zh not_active Expired - Fee Related
- 2011-11-22 EP EP11849724.7A patent/EP2652790A4/en not_active Withdrawn
- 2011-11-22 JP JP2013543189A patent/JP5757594B2/ja not_active Expired - Fee Related
- 2011-11-22 KR KR1020137015373A patent/KR101487634B1/ko active IP Right Grant
- 2011-11-23 TW TW100142912A patent/TWI476920B/zh active
-
2015
- 2015-05-28 JP JP2015108813A patent/JP6045636B2/ja not_active Expired - Fee Related
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TWI476920B (zh) | 2015-03-11 |
KR20130086243A (ko) | 2013-07-31 |
JP6045636B2 (ja) | 2016-12-14 |
CN103262249A (zh) | 2013-08-21 |
JP5757594B2 (ja) | 2015-07-29 |
SG191001A1 (en) | 2013-07-31 |
US20120153263A1 (en) | 2012-06-21 |
WO2012082329A3 (en) | 2012-09-07 |
CN103262249B (zh) | 2016-11-23 |
EP2652790A2 (en) | 2013-10-23 |
WO2012082329A2 (en) | 2012-06-21 |
KR101487634B1 (ko) | 2015-01-29 |
JP2014502429A (ja) | 2014-01-30 |
TW201244091A (en) | 2012-11-01 |
EP2652790A4 (en) | 2015-10-07 |
US8890118B2 (en) | 2014-11-18 |
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