JP2015177149A - 放熱板付きリードフレーム、放熱板付きリードフレームの製造方法、半導体装置、および半導体装置の製造方法 - Google Patents
放熱板付きリードフレーム、放熱板付きリードフレームの製造方法、半導体装置、および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
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- 229910052751 metal Inorganic materials 0.000 description 11
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- 230000017525 heat dissipation Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 239000002826 coolant Substances 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
20;放熱板付きリードフレーム
21;かしめ部材
22;かしめ孔
30;放熱板
31;表面
32;裏面
33;凹部
40;裏面側リードフレーム
41;表面
42;裏面
43;貫通孔
44;凹部
45;開口部
46;信号端子
47;バスバー
50;半導体チップ
60;封止樹脂
61;接合材
62;プライマー樹脂
71;冷却器
72;ボンディングワイヤ
80;表面側リードフレーム
87;バスバー
91;金属部材
92;金型
93;マスク
94;開口部
141;中央部
142;突出部
191;下型
192;上型
193;凸部
Claims (8)
- 半導体チップが実装される、放熱板付きリードフレームであって、
放熱板と、
一方面と前記一方面と反対側の他方面を備え、前記他方面が前記放熱板に接触するように前記放熱板に重ねて固定されたリードフレームであって、前記放熱板と重なる位置に、前記一方面から前記他方面に貫通する貫通孔が形成されており、前記他方面における前記貫通孔の開口面積が、前記一方面における前記貫通孔の開口面積より大きい前記リードフレームと、からなる放熱板付きリードフレーム。 - 請求項1に記載の放熱板付きリードフレームと、
前記放熱板付きリードフレームに実装された半導体チップと、
前記半導体チップおよび前記リードフレームを封止する封止樹脂と、を備え、
前記貫通孔に前記封止樹脂が充填されている、半導体装置。 - 前記リードフレームに形成された前記貫通孔の内面にプライマー樹脂が塗布されている、請求項2に記載の半導体装置。
- 前記他方面に、前記放熱板と重なる位置に凹部が形成されており、
前記凹部の底面に前記貫通孔が開口している、請求項2又は3に記載の半導体装置。 - 半導体チップが実装される、放熱板付きリードフレームを製造する方法であって、
リードフレームに、その一方面から前記一方面と反対側の他方面に貫通する貫通孔を形成する貫通孔形成工程であって、前記他方面における前記貫通孔の開口面積が前記一方面における前記貫通孔の開口面積より大きくなるように前記貫通孔を形成する前記貫通孔形成工程と、
前記他方面が放熱板に接触するように、前記貫通孔が形成された前記リードフレームを前記放熱板に重ねて固定する固定工程であって、前記他方面における前記貫通孔が前記放熱板によって塞がれる前記固定工程と、からなる方法。 - 請求項5に記載の方法により製造された前記放熱板付きリードフレームに半導体チップを実装する実装工程を備える、半導体装置を製造する方法。
- 前記半導体チップおよび前記リードフレームを封止樹脂により封止する封止工程を更に備え、
前記封止工程では、前記貫通孔に前記封止樹脂が充填される、請求項6に記載の方法。 - 前記固定工程の前に、前記貫通孔の内面にプライマー樹脂を塗布するプライマー工程を更に備える、請求項6又は7に記載の方法。
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JP2014054403A JP5910653B2 (ja) | 2014-03-18 | 2014-03-18 | 放熱板付きリードフレーム、放熱板付きリードフレームの製造方法、半導体装置、および半導体装置の製造方法 |
US14/635,319 US9214418B2 (en) | 2014-03-18 | 2015-03-02 | Lead frame with radiator plate, method for manufacturing lead frame with radiator plate, semiconductor device, and method for manufacturing semiconductor device |
DE102015103897.8A DE102015103897B4 (de) | 2014-03-18 | 2015-03-17 | Leitungsrahmen mit Kühlerplatte, Verfahren zur Herstellung eines Leitungsrahmens mit Kühlerplatte, Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung |
CN201510121206.4A CN105047635B (zh) | 2014-03-18 | 2015-03-18 | 附带散热板的引脚框架及其制造方法、以及半导体装置及其制造方法 |
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JP2014054403A JP5910653B2 (ja) | 2014-03-18 | 2014-03-18 | 放熱板付きリードフレーム、放熱板付きリードフレームの製造方法、半導体装置、および半導体装置の製造方法 |
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JP5910653B2 JP5910653B2 (ja) | 2016-04-27 |
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JP (1) | JP5910653B2 (ja) |
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DE (1) | DE102015103897B4 (ja) |
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US20180286702A1 (en) * | 2017-03-29 | 2018-10-04 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
JP2020136369A (ja) * | 2019-02-15 | 2020-08-31 | 富士電機株式会社 | 半導体モジュール及び半導体モジュールの製造方法 |
JP2021099072A (ja) * | 2019-12-23 | 2021-07-01 | ダイヤモンド電機株式会社 | イグナイタ |
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JP6565542B2 (ja) * | 2015-09-25 | 2019-08-28 | トヨタ自動車株式会社 | 半導体装置 |
US10083899B2 (en) | 2017-01-23 | 2018-09-25 | Infineon Technologies Ag | Semiconductor package with heat slug and rivet free die attach area |
CN107180799A (zh) * | 2017-04-26 | 2017-09-19 | 东莞市柏尔电子科技有限公司 | 一种大功率三极管的封装基板 |
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US20180286702A1 (en) * | 2017-03-29 | 2018-10-04 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
JP2020136369A (ja) * | 2019-02-15 | 2020-08-31 | 富士電機株式会社 | 半導体モジュール及び半導体モジュールの製造方法 |
JP7298177B2 (ja) | 2019-02-15 | 2023-06-27 | 富士電機株式会社 | 半導体モジュール及び半導体モジュールの製造方法 |
JP2021099072A (ja) * | 2019-12-23 | 2021-07-01 | ダイヤモンド電機株式会社 | イグナイタ |
JP7388912B2 (ja) | 2019-12-23 | 2023-11-29 | ダイヤゼブラ電機株式会社 | イグナイタ |
Also Published As
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US20150270204A1 (en) | 2015-09-24 |
US9214418B2 (en) | 2015-12-15 |
CN105047635B (zh) | 2018-01-12 |
DE102015103897A1 (de) | 2015-09-24 |
CN105047635A (zh) | 2015-11-11 |
DE102015103897B4 (de) | 2020-01-09 |
JP5910653B2 (ja) | 2016-04-27 |
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