JP2015177034A - 固体撮像装置、その製造方法、及びカメラ - Google Patents

固体撮像装置、その製造方法、及びカメラ Download PDF

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Publication number
JP2015177034A
JP2015177034A JP2014052431A JP2014052431A JP2015177034A JP 2015177034 A JP2015177034 A JP 2015177034A JP 2014052431 A JP2014052431 A JP 2014052431A JP 2014052431 A JP2014052431 A JP 2014052431A JP 2015177034 A JP2015177034 A JP 2015177034A
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semiconductor region
region
semiconductor
solid
state imaging
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JP2015177034A5 (enExample
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篠原　真人
Masato Shinohara
真人 篠原
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Canon Inc
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Canon Inc
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Priority to JP2014052431A priority Critical patent/JP2015177034A/ja
Priority to US14/635,035 priority patent/US9437647B2/en
Priority to CN201510103713.5A priority patent/CN104916654B/zh
Publication of JP2015177034A publication Critical patent/JP2015177034A/ja
Publication of JP2015177034A5 publication Critical patent/JP2015177034A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014052431A 2014-03-14 2014-03-14 固体撮像装置、その製造方法、及びカメラ Pending JP2015177034A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014052431A JP2015177034A (ja) 2014-03-14 2014-03-14 固体撮像装置、その製造方法、及びカメラ
US14/635,035 US9437647B2 (en) 2014-03-14 2015-03-02 Solid-state image capturing apparatus, method of manufacturing the same, and camera
CN201510103713.5A CN104916654B (zh) 2014-03-14 2015-03-10 固态图像捕获装置、其制造方法和照相机

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JP2014052431A JP2015177034A (ja) 2014-03-14 2014-03-14 固体撮像装置、その製造方法、及びカメラ

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JP2015177034A true JP2015177034A (ja) 2015-10-05
JP2015177034A5 JP2015177034A5 (enExample) 2017-03-23

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US (1) US9437647B2 (enExample)
JP (1) JP2015177034A (enExample)
CN (1) CN104916654B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6552479B2 (ja) 2016-12-28 2019-07-31 キヤノン株式会社 固体撮像装置及び撮像システム
JP6953263B2 (ja) 2017-10-05 2021-10-27 キヤノン株式会社 固体撮像装置および撮像システム
JP7108421B2 (ja) 2018-02-15 2022-07-28 キヤノン株式会社 撮像装置及び撮像システム
JP6814762B2 (ja) * 2018-03-16 2021-01-20 株式会社日立製作所 撮像装置
JP7134781B2 (ja) 2018-08-17 2022-09-12 キヤノン株式会社 光電変換装置及び撮像システム
US11503234B2 (en) 2019-02-27 2022-11-15 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, radioactive ray imaging system, and movable object
JP7652543B2 (ja) 2020-07-29 2025-03-27 キヤノン株式会社 光電変換装置
JP7534902B2 (ja) 2020-09-23 2024-08-15 キヤノン株式会社 光電変換装置、撮像装置、半導体装置及び光電変換システム
JP2023023218A (ja) 2021-08-04 2023-02-16 キヤノン株式会社 光電変換装置
JP2024004306A (ja) 2022-06-28 2024-01-16 キヤノン株式会社 光電変換装置
JP2024017294A (ja) 2022-07-27 2024-02-08 キヤノン株式会社 光電変換装置

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JPS6372151A (ja) * 1986-09-13 1988-04-01 Semiconductor Res Found 固体撮像装置及びその製造方法
JPS63244771A (ja) * 1987-03-31 1988-10-12 Canon Inc 光電変換装置
JPH07211882A (ja) * 1994-01-26 1995-08-11 Hamamatsu Photonics Kk 固体撮像装置
JP2000188262A (ja) * 1998-12-21 2000-07-04 Sony Corp 半導体装置のウェル形成方法
JP2000260972A (ja) * 1999-03-05 2000-09-22 Toshiba Corp 固体撮像装置およびその製造方法
JP2001036062A (ja) * 1999-07-23 2001-02-09 Sony Corp 固体撮像素子の製造方法および固体撮像素子
JP2004193547A (ja) * 2002-06-27 2004-07-08 Canon Inc 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP2006019487A (ja) * 2004-07-01 2006-01-19 Nikon Corp 増幅型固体撮像素子
JP2006147757A (ja) * 2004-11-18 2006-06-08 Sony Corp 固体撮像装置およびその製造方法
JP2007207891A (ja) * 2006-01-31 2007-08-16 Sony Corp 固体撮像装置、及び固体撮像装置の製造方法
JP2011238768A (ja) * 2010-05-10 2011-11-24 Canon Inc 固体撮像装置およびその駆動方法
JP2012208350A (ja) * 2011-03-30 2012-10-25 Lapis Semiconductor Co Ltd レジストパターンの形成方法、立体構造の製造方法、及び半導体装置の製造方法

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US4879470A (en) 1987-01-16 1989-11-07 Canon Kabushiki Kaisha Photoelectric converting apparatus having carrier eliminating means
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KR101363532B1 (ko) * 2009-10-05 2014-02-14 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 반도체 소자 및 고체 촬상 장치
JP5651982B2 (ja) * 2010-03-31 2015-01-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP5767465B2 (ja) 2010-12-15 2015-08-19 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
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Publication number Priority date Publication date Assignee Title
JPS6372151A (ja) * 1986-09-13 1988-04-01 Semiconductor Res Found 固体撮像装置及びその製造方法
JPS63244771A (ja) * 1987-03-31 1988-10-12 Canon Inc 光電変換装置
JPH07211882A (ja) * 1994-01-26 1995-08-11 Hamamatsu Photonics Kk 固体撮像装置
JP2000188262A (ja) * 1998-12-21 2000-07-04 Sony Corp 半導体装置のウェル形成方法
JP2000260972A (ja) * 1999-03-05 2000-09-22 Toshiba Corp 固体撮像装置およびその製造方法
JP2001036062A (ja) * 1999-07-23 2001-02-09 Sony Corp 固体撮像素子の製造方法および固体撮像素子
JP2004193547A (ja) * 2002-06-27 2004-07-08 Canon Inc 固体撮像装置及び固体撮像装置を用いたカメラシステム
JP2006019487A (ja) * 2004-07-01 2006-01-19 Nikon Corp 増幅型固体撮像素子
JP2006147757A (ja) * 2004-11-18 2006-06-08 Sony Corp 固体撮像装置およびその製造方法
JP2007207891A (ja) * 2006-01-31 2007-08-16 Sony Corp 固体撮像装置、及び固体撮像装置の製造方法
JP2011238768A (ja) * 2010-05-10 2011-11-24 Canon Inc 固体撮像装置およびその駆動方法
JP2012208350A (ja) * 2011-03-30 2012-10-25 Lapis Semiconductor Co Ltd レジストパターンの形成方法、立体構造の製造方法、及び半導体装置の製造方法

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CN104916654A (zh) 2015-09-16
US20150263062A1 (en) 2015-09-17
US9437647B2 (en) 2016-09-06
CN104916654B (zh) 2017-12-01

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