JP2015162655A - 加熱処理容器、加熱処理容器集合体、及び、半導体素子製造装置 - Google Patents
加熱処理容器、加熱処理容器集合体、及び、半導体素子製造装置 Download PDFInfo
- Publication number
- JP2015162655A JP2015162655A JP2014038715A JP2014038715A JP2015162655A JP 2015162655 A JP2015162655 A JP 2015162655A JP 2014038715 A JP2014038715 A JP 2014038715A JP 2014038715 A JP2014038715 A JP 2014038715A JP 2015162655 A JP2015162655 A JP 2015162655A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- container
- sic substrate
- treatment container
- internal space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D11/00—Arrangement of elements for electric heating in or on furnaces
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D11/00—Arrangement of elements for electric heating in or on furnaces
- F27D11/02—Ohmic resistance heating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D5/0037—Supports specially adapted for semi-conductors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67386—Closed carriers characterised by the construction of the closed carrier
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D2005/0081—Details
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
- F27D2007/063—Special atmospheres, e.g. high pressure atmospheres
Abstract
【解決手段】加熱処理容器は、少なくとも表面が単結晶SiCで構成されるSiC基板40をSi蒸気圧下で加熱処理するための容器である。容器部30と、基板支持部50と、を備える。容器部30は、Si蒸気圧を実現するための内部空間33を有し、当該内部空間33の一部が開放される。基板支持部50は、SiC基板40を支持可能であり、当該SiC基板40を支持することで容器部30の開放された部分が覆われて内部空間33が密閉空間となる。
【選択図】図4
Description
3a〜3f 加熱処理容器
10 高温真空炉(半導体素子製造装置)
21 本加熱室
22 予備加熱室
30 容器部
31 底面部
32 側面部
34 第1ステップ
35 第2ステップ(容器支持部)
36 第3ステップ
40 SiC基板
41 被処理面
50 基板支持部
51 ベース部
52 切欠き
53 貫通孔
54 縁部
Claims (9)
- 少なくとも表面が単結晶SiCで構成されるSiC基板をSi蒸気圧下で加熱処理するための加熱処理容器において、
Si蒸気圧を実現するための内部空間を有し、当該内部空間の一部が開放された容器部と、
前記SiC基板を支持可能であり、当該SiC基板を支持することで前記容器部の開放された部分が覆われて前記内部空間が密閉空間となる基板支持部と、
を備えることを特徴とする加熱処理容器。 - 請求項1に記載の加熱処理容器であって、
前記容器部は、前記内部空間の上方が開放されており、
前記基板支持部が前記SiC基板を支持することで、前記内部空間の上方が覆われることを特徴とする加熱処理容器。 - 請求項2に記載の加熱処理容器であって、
別の加熱処理容器の下面を支持する容器支持部が上面に設けられていることを特徴とする加熱処理容器。 - 請求項3に記載の加熱処理容器であって、
前記基板支持部には貫通孔が形成され、当該基板支持部は前記貫通孔の外側の縁部で前記SiC基板を支持し、
前記容器部は、第1ステップと、当該第1ステップより上方にある第2ステップと、を備えており、
前記第1ステップは、前記基板支持部の外縁を支持し、前記貫通孔から露出する前記SiC基板を前記内部空間に対面させ、
前記第2ステップは、前記容器支持部に該当し、別の加熱処理容器の下面を支持することを特徴とする加熱処理容器。 - 請求項1から4までの何れか一項に記載の加熱処理容器であって、
少なくとも前記容器部は、タンタル金属を含み、当該タンタル金属の内部空間側に炭化タンタル層が設けられ、当該炭化タンタル層の更に内部空間側にタンタルシリサイド層が設けられることを特徴とする加熱処理容器。 - 請求項5に記載の加熱処理容器であって、
前記容器部の前記内部空間を形成する壁面の全体にわたって前記タンタルシリサイド層が設けられていることを特徴とする加熱処理容器。 - 請求項1から6までの何れか一項に記載の加熱処理容器であって、
前記容器部と前記基板支持部が分離可能であり、前記基板支持部が交換可能であることを特徴とする加熱処理容器。 - 請求項1から7までの何れか一項に記載の加熱処理容器を複数連結して構成される加熱処理容器集合体。
- 請求項1から8までの何れか一項に記載の加熱処理容器を備えることを特徴とする半導体素子製造装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014038715A JP6247566B2 (ja) | 2014-02-28 | 2014-02-28 | 加熱処理容器、加熱処理容器集合体、及び、半導体素子製造装置 |
US14/468,524 US9644894B2 (en) | 2014-02-28 | 2014-08-26 | Semiconductor device manufacturing apparatus |
KR1020140112282A KR102337551B1 (ko) | 2014-02-28 | 2014-08-27 | 가열 처리 용기, 가열 처리 용기 집합체, 및 반도체 소자 제조 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014038715A JP6247566B2 (ja) | 2014-02-28 | 2014-02-28 | 加熱処理容器、加熱処理容器集合体、及び、半導体素子製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015162655A true JP2015162655A (ja) | 2015-09-07 |
JP6247566B2 JP6247566B2 (ja) | 2017-12-13 |
Family
ID=54007108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014038715A Active JP6247566B2 (ja) | 2014-02-28 | 2014-02-28 | 加熱処理容器、加熱処理容器集合体、及び、半導体素子製造装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9644894B2 (ja) |
JP (1) | JP6247566B2 (ja) |
KR (1) | KR102337551B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021053906A1 (ja) * | 2019-09-18 | 2021-03-25 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6751874B2 (ja) * | 2014-11-18 | 2020-09-09 | 東洋炭素株式会社 | SiC基板のエッチング方法 |
JP6401293B2 (ja) * | 2014-11-27 | 2018-10-10 | アキレス株式会社 | リングスペーサー |
US10832927B2 (en) * | 2015-12-18 | 2020-11-10 | Texas Instruments Incorporated | Interlocking nest wafer protector |
JP1565116S (ja) * | 2016-02-10 | 2016-12-12 | ||
CN112930422A (zh) * | 2018-09-21 | 2021-06-08 | 东洋炭素株式会社 | 器件制作用晶圆的制造方法 |
RU191198U1 (ru) * | 2019-04-26 | 2019-07-29 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" | Блок фиксации нагреваемой подложки в вакуумной камере с жёсткими зажимами фиксирующих керамических пластин |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0758041A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | サセプタ |
US20020083890A1 (en) * | 1996-01-22 | 2002-07-04 | Vodakov Yury Alexandrovich | Tantalum crucible fabrication and treatment |
JP2008016691A (ja) * | 2006-07-07 | 2008-01-24 | Kwansei Gakuin | 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板 |
JP2008230944A (ja) * | 2007-03-23 | 2008-10-02 | Kwansei Gakuin | 単結晶炭化ケイ素基板の表面平坦化方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板 |
JP2012028446A (ja) * | 2010-07-21 | 2012-02-09 | Kwansei Gakuin | SiC半導体ウエーハ熱処理装置 |
WO2013127530A1 (de) * | 2012-02-27 | 2013-09-06 | Centrotherm Thermal Solutions Gmbh & Co. Kg | Verfahren zur thermischen behandlung von siliziumcarbidsubstraten |
JP2014103180A (ja) * | 2012-11-16 | 2014-06-05 | Toyo Tanso Kk | 収容容器、収容容器の製造方法、半導体の製造方法、及び半導体製造装置。 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05203369A (ja) * | 1992-01-25 | 1993-08-10 | Murata Mfg Co Ltd | セラミックス焼成用さや鉢 |
US6228173B1 (en) * | 1998-10-12 | 2001-05-08 | Tokyo Electron Limited | Single-substrate-heat-treating apparatus for semiconductor process system |
US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
US6576572B2 (en) * | 2000-12-28 | 2003-06-10 | Schott Lithotec Ag | Method of heating a substrate using a variable surface hot plate for improved bake uniformity |
JP3825277B2 (ja) * | 2001-05-25 | 2006-09-27 | 東京エレクトロン株式会社 | 加熱処理装置 |
JP2003246700A (ja) * | 2002-02-22 | 2003-09-02 | Japan Science & Technology Corp | シリコンナノニードルの製法 |
JP4016823B2 (ja) * | 2002-12-06 | 2007-12-05 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
US20060249073A1 (en) * | 2003-03-10 | 2006-11-09 | The New Industry Research Organization | Method of heat treatment and heat treatment apparatus |
JP4666496B2 (ja) * | 2005-12-07 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
JP4827569B2 (ja) * | 2006-03-23 | 2011-11-30 | 大日本スクリーン製造株式会社 | 基板支持構造とこれを用いた熱処理装置と基板支持構造に用いられるシート状物と基板支持構造の製造方法 |
US8361227B2 (en) * | 2006-09-26 | 2013-01-29 | Ii-Vi Incorporated | Silicon carbide single crystals with low boron content |
WO2010140508A1 (ja) * | 2009-06-01 | 2010-12-09 | 東洋炭素株式会社 | タンタル部材の浸炭処理方法及びタンタル部材 |
JP5875143B2 (ja) * | 2011-08-26 | 2016-03-02 | 学校法人関西学院 | 半導体ウエハの製造方法 |
JP6091932B2 (ja) * | 2012-03-22 | 2017-03-08 | 株式会社ニューフレアテクノロジー | 炭化珪素の成膜装置および炭化珪素の成膜方法 |
US9765271B2 (en) * | 2012-06-27 | 2017-09-19 | James J. Myrick | Nanoparticles, compositions, manufacture and applications |
-
2014
- 2014-02-28 JP JP2014038715A patent/JP6247566B2/ja active Active
- 2014-08-26 US US14/468,524 patent/US9644894B2/en active Active
- 2014-08-27 KR KR1020140112282A patent/KR102337551B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0758041A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | サセプタ |
US20020083890A1 (en) * | 1996-01-22 | 2002-07-04 | Vodakov Yury Alexandrovich | Tantalum crucible fabrication and treatment |
JP2008016691A (ja) * | 2006-07-07 | 2008-01-24 | Kwansei Gakuin | 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板 |
JP2008230944A (ja) * | 2007-03-23 | 2008-10-02 | Kwansei Gakuin | 単結晶炭化ケイ素基板の表面平坦化方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板 |
JP2012028446A (ja) * | 2010-07-21 | 2012-02-09 | Kwansei Gakuin | SiC半導体ウエーハ熱処理装置 |
WO2013127530A1 (de) * | 2012-02-27 | 2013-09-06 | Centrotherm Thermal Solutions Gmbh & Co. Kg | Verfahren zur thermischen behandlung von siliziumcarbidsubstraten |
JP2014103180A (ja) * | 2012-11-16 | 2014-06-05 | Toyo Tanso Kk | 収容容器、収容容器の製造方法、半導体の製造方法、及び半導体製造装置。 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021053906A1 (ja) * | 2019-09-18 | 2021-03-25 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP2021048231A (ja) * | 2019-09-18 | 2021-03-25 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP7280154B2 (ja) | 2019-09-18 | 2023-05-23 | 株式会社日立製作所 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US9644894B2 (en) | 2017-05-09 |
KR102337551B1 (ko) | 2021-12-10 |
KR20150102670A (ko) | 2015-09-07 |
US20150249025A1 (en) | 2015-09-03 |
JP6247566B2 (ja) | 2017-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6247566B2 (ja) | 加熱処理容器、加熱処理容器集合体、及び、半導体素子製造装置 | |
JP5564682B2 (ja) | 半導体素子の製造方法 | |
WO2014076963A1 (ja) | 単結晶SiC基板の表面処理方法及び単結晶SiC基板 | |
JP6232329B2 (ja) | SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 | |
KR102422305B1 (ko) | 온도 균일도의 증가를 위한 서셉터 히터의 국부적 온도 제어 | |
JP6751874B2 (ja) | SiC基板のエッチング方法 | |
JP6093154B2 (ja) | 収容容器の製造方法 | |
JP6310571B2 (ja) | SiC基板処理方法 | |
JP5224256B2 (ja) | 単結晶炭化ケイ素基板の処理方法、半導体素子の製造方法 | |
US10665485B2 (en) | Heat treatment vessel for single-crystal silicon carbide substrate and etching method | |
JP5946124B2 (ja) | 半導体デバイスの製造方法 | |
JP6291615B1 (ja) | 窒化アルミニウム単結晶製造装置 | |
JP5934633B2 (ja) | 単結晶SiC基板の表面処理方法及び単結晶SiC基板の製造方法 | |
JP2015000824A (ja) | 単結晶SiC基板の表面処理方法及び単結晶SiC基板 | |
JP2019511121A (ja) | 負圧で圧締された基板を有するサセプタおよびエピタキシャル成長のための反応器 | |
JP2013201333A (ja) | 基板処理装置、半導体装置の製造方法及び基板処理方法 | |
JP2018197173A (ja) | 窒化アルミニウム単結晶製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160920 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170522 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170525 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170724 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171102 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171117 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6247566 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |