JP2015153870A - 半導体装置の製造方法、光電変換装置 - Google Patents

半導体装置の製造方法、光電変換装置 Download PDF

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Publication number
JP2015153870A
JP2015153870A JP2014025732A JP2014025732A JP2015153870A JP 2015153870 A JP2015153870 A JP 2015153870A JP 2014025732 A JP2014025732 A JP 2014025732A JP 2014025732 A JP2014025732 A JP 2014025732A JP 2015153870 A JP2015153870 A JP 2015153870A
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Japan
Prior art keywords
insulating layer
conductive member
insulating
etching
semiconductor device
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Pending
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JP2014025732A
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English (en)
Japanese (ja)
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JP2015153870A5 (https=
Inventor
愛子 加藤
Aiko Kato
愛子 加藤
優 西村
Masaru Nishimura
優 西村
裕章 成瀬
Hiroaki Naruse
裕章 成瀬
慶大 鳥居
Keita Torii
慶大 鳥居
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014025732A priority Critical patent/JP2015153870A/ja
Priority to US14/618,937 priority patent/US9559136B2/en
Publication of JP2015153870A publication Critical patent/JP2015153870A/ja
Publication of JP2015153870A5 publication Critical patent/JP2015153870A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/0888—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures wherein via-level dielectrics are compositionally different than trench-level dielectrics

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2014025732A 2014-02-13 2014-02-13 半導体装置の製造方法、光電変換装置 Pending JP2015153870A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014025732A JP2015153870A (ja) 2014-02-13 2014-02-13 半導体装置の製造方法、光電変換装置
US14/618,937 US9559136B2 (en) 2014-02-13 2015-02-10 Semiconductor device manufacturing method, and photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014025732A JP2015153870A (ja) 2014-02-13 2014-02-13 半導体装置の製造方法、光電変換装置

Publications (2)

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JP2015153870A true JP2015153870A (ja) 2015-08-24
JP2015153870A5 JP2015153870A5 (https=) 2017-03-16

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US (1) US9559136B2 (https=)
JP (1) JP2015153870A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018147976A (ja) * 2017-03-03 2018-09-20 キヤノン株式会社 固体撮像装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3120156B1 (fr) * 2021-02-25 2023-02-10 Commissariat Energie Atomique Procédé de gravure d’une couche diélectrique tridimensionnelle

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311939A (ja) * 1999-04-27 2000-11-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2008091643A (ja) * 2006-10-02 2008-04-17 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2010087190A (ja) * 2008-09-30 2010-04-15 Canon Inc 光電変換装置及び光電変換装置の製造方法
JP2011009770A (ja) * 2010-08-23 2011-01-13 Fujitsu Semiconductor Ltd 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077625A (ja) 1998-08-31 2000-03-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004134498A (ja) 2002-10-09 2004-04-30 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP5055768B2 (ja) * 2006-01-16 2012-10-24 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2008147588A (ja) 2006-12-13 2008-06-26 Nec Electronics Corp 回路パターン設計システム、回路パターン設計方法、及び回路パターン設計プログラム
JP2009004633A (ja) 2007-06-22 2009-01-08 Fujitsu Microelectronics Ltd 多層配線構造および製造方法
JP4697258B2 (ja) * 2008-05-09 2011-06-08 ソニー株式会社 固体撮像装置と電子機器
JP2011077468A (ja) * 2009-10-02 2011-04-14 Panasonic Corp 半導体装置の製造方法および半導体装置
JP2011249583A (ja) * 2010-05-27 2011-12-08 Elpida Memory Inc 半導体装置及びその製造方法
JP2012104667A (ja) 2010-11-10 2012-05-31 Panasonic Corp 半導体装置の製造方法および半導体装置
JP5709564B2 (ja) * 2011-02-09 2015-04-30 キヤノン株式会社 半導体装置の製造方法
KR20130107628A (ko) * 2012-03-22 2013-10-02 삼성디스플레이 주식회사 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311939A (ja) * 1999-04-27 2000-11-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2008091643A (ja) * 2006-10-02 2008-04-17 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2010087190A (ja) * 2008-09-30 2010-04-15 Canon Inc 光電変換装置及び光電変換装置の製造方法
JP2011009770A (ja) * 2010-08-23 2011-01-13 Fujitsu Semiconductor Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018147976A (ja) * 2017-03-03 2018-09-20 キヤノン株式会社 固体撮像装置及びその製造方法

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US9559136B2 (en) 2017-01-31
US20150228683A1 (en) 2015-08-13

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