JP2015149451A - アライメント方法、電子部品の接続方法、接続体の製造方法、接続体、異方性導電フィルム - Google Patents
アライメント方法、電子部品の接続方法、接続体の製造方法、接続体、異方性導電フィルム Download PDFInfo
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- JP2015149451A JP2015149451A JP2014022861A JP2014022861A JP2015149451A JP 2015149451 A JP2015149451 A JP 2015149451A JP 2014022861 A JP2014022861 A JP 2014022861A JP 2014022861 A JP2014022861 A JP 2014022861A JP 2015149451 A JP2015149451 A JP 2015149451A
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0266—Marks, test patterns or identification means
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
- C09J171/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
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- C09J171/12—Polyphenylene oxides
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1339—Gaskets; Spacers; Sealing of cells
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/28—Adhesive materials or arrangements
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- H—ELECTRICITY
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- H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
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- H—ELECTRICITY
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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Abstract
【解決手段】透明基板12の表面に、導電性接着剤1を介して電子部品18を搭載し、透明基板12の裏面側から基板側アライメントマーク21及び部品側アライメントマーク22を撮像し、撮像画像から両アライメントマーク21,22の位置を調整し、透明基板12に対する電子部品18の搭載位置を合わせるアライメント方法において、導電性接着剤1は、平面視において導電性粒子4が規則的に配列され、撮像画像において、両アライメントマーク21,22の外側縁の仮想線分に沿って、導電性粒子4間から臨む両アライメントマーク21,22の外側縁が線分Sとして断続的に表れている。
【選択図】図6
Description
以下では、本発明が適用されたアライメント方法を用いて電子部品が透明基板上にCOG接続された接続体として、液晶表示パネルのガラス基板に、電子部品として液晶駆動用のICチップを実装する場合を例に説明する。この液晶表示パネル10は、図1に示すように、ガラス基板等からなる二枚の透明基板11,12が対向配置され、これら透明基板11,12が枠状のシール13によって互いに貼り合わされている。そして、液晶表示パネル10は、透明基板11,12によって囲繞された空間内に液晶14が封入されることによりパネル表示部15が形成されている。
基板側アライメントマーク21及びIC側アライメントマーク22は、例えば外側マーク及びこの外側マーク内に位置合わせされる内側マークからなる。図3に示すように、透明基板12は、基板側アライメントマーク21として例えば四角形の開口部を有する四角形状の外側マーク21aが形成され、液晶駆動用IC18は、IC側アライメントマーク22として外側マーク21aの開口部に収まる大きさの四角形からなる内側マーク22aが形成される。
次いで、異方性導電フィルム1について説明する。異方性導電フィルム(ACF:Anisotropic Conductive Film)1は、図4に示すように、通常、基材となる剥離フィルム2上に導電性粒子4を含有するバインダー樹脂層(接着剤層)3が形成されたものである。異方性導電フィルム1は、熱硬化型あるいは紫外線等の光硬化型の接着剤であり、液晶表示パネル10の透明基板12に形成された透明電極17上に貼着されるとともに液晶駆動用IC18が搭載され、熱圧着ヘッド33により熱加圧されることにより流動化して導電性粒子4が相対向する透明電極17の端子部17aと液晶駆動用IC18の電極端子19間で押し潰され、加熱あるいは紫外線照射により、導電性粒子が押し潰された状態で硬化する。これにより、異方性導電フィルム1は、透明基板12と液晶駆動用IC18とを接続し、導通させることができる。
導電性粒子4としては、異方性導電フィルム1において使用されている公知の何れの導電性粒子を挙げることができる。導電性粒子4としては、例えば、ニッケル、鉄、銅、アルミニウム、錫、鉛、クロム、コバルト、銀、金等の各種金属や金属合金の粒子、金属酸化物、カーボン、グラファイト、ガラス、セラミック、プラスチック等の粒子の表面に金属をコートしたもの、或いは、これらの粒子の表面に更に絶縁薄膜をコートしたもの等が挙げられる。樹脂粒子の表面に金属をコートしたものである場合、樹脂粒子としては、例えば、エポキシ樹脂、フェノール樹脂、アクリル樹脂、アクリロニトリル・スチレン(AS)樹脂、ベンゾグアナミン樹脂、ジビニルベンゼン系樹脂、スチレン系樹脂等の粒子を挙げることができる。
異方性導電フィルム1は、導電性粒子4が平面視において所定の配列パターンで規則的に配列され、例えば図5に示すように、格子状かつ均等に配列される。導電性粒子4が平面視において規則的に配列されることにより、異方性導電フィルム1は、導電性粒子4が高密度に充填されていても、撮像カメラ30によるアライメントマークの識別が可能とされている。導電性粒子4の均等配列パターンは、平面視で四方格子や六方格子等、任意に設定することができる。導電性粒子4は、視認性即ち透過性を阻害しないように、同一層内で単一に分散しているものであってもよいが、配列しているものの方が視認性の確保の上では好ましい。アライメント工程については後に詳述する。
次いで、異方性導電フィルム1を介して液晶駆動用IC18が透明基板12の透明電極17上に接続された接続体の製造工程について説明する。先ず、異方性導電フィルム1を透明電極17上に仮圧着する。異方性導電フィルム1を仮圧着する方法は、透明基板12の透明電極17上に、バインダー樹脂層3が透明電極17側となるように、異方性導電フィルム1を配置する。
次に、バインダー樹脂層3が仮貼りされた透明基板12が透明ステージ31上に載置され、透明基板12の透明電極17と液晶駆動用IC18の電極端子19とがバインダー樹脂層3を介して対向するように、透明基板12と液晶駆動用IC18とのアライメントを行う。
ここで、撮像カメラ30の撮像画像において、導電性粒子4の間から臨むアライメントマーク21,22の外側縁の線分Sは、数十〜数百μm程度となる。また、導電性粒子4間から臨む両アライメントマーク21,22の外側縁の線分Sは、線分として認識できる長さを有し、トータルで撮像画像における仮想線分の長さの25%以上、好ましくは33%以上の長さを有すれば、アライメントマーク21,22の外側縁として捉えることができる。これは、導電性粒子4が配列されているため、断続した線分が、その延長上にあることで実質的に線であると認識できるからである。同一層内、つまり同一平面内に所定距離で単一に導電性粒子4が存在していても同様の効果をもたらすが、配列しているものは上記の認識が予想できるため、ソフトウェア上での処理が容易になるという有利な効果を有する。そして、当該撮像画像を用いて所定の画像処理を行うことにより透明基板12に対する液晶駆動用ICの位置を座標上で高精度に特定することができる。
また、撮像カメラ30の撮像画像において、導電性粒子4間の領域が50%より大きく、好ましくは55%以上、より好ましくは60%以上、更により好ましくは65%以上となること、すなわち、導電性粒子4の面積占有率が50%未満、好ましくは45%以下、より好ましくは40%以下、更により好ましくは35%以下となることが好ましい。導電性粒子4がこれ以上高密度に配列されていると、撮像カメラ30の撮像画像において、導電性粒子4間から臨む線分Sを境にコントラストの差を認識しアライメントマーク21,22の外側縁として捉えることが困難となり、高精度に位置検出を行うことができない。
アライメント工程の後、バインダー樹脂層3を硬化させる所定の温度に加熱された熱圧着ヘッド33によって、所定の圧力、時間で液晶駆動用IC18上から熱加圧する。これにより、異方性導電フィルム1のバインダー樹脂は流動性を示し、液晶駆動用IC18の電極端子19と透明基板12の端子部17aとの間から流出するとともに、バインダー樹脂層3中の導電性粒子4は、電極端子19及び端子部17a間に挟持されて押し潰される。
評価用ICの接続に用いる異方性導電フィルムのバインダー樹脂層は、フェノキシ樹脂(商品名YP50、新日鐵化学社製)60質量部、エポキシ樹脂(商品名jER828、三菱化学社製)40質量部、硬化剤(商品名SI‐60L、三新化学工業社製)2質量部を溶剤に加えたバインダー樹脂組成物を調整し、このバインダー樹脂組成物を剥離フィルム上に塗布、焼成した。実施例1〜3、比較例1,2では、導電性粒子(商品名AUL704、積水化学工業社製)を所定の面積占有率となるように格子状に規則配列した後、これを剥離フィルムに支持されたバインダー樹脂層に転写することにより、導電性粒子が規則配列された異方性導電フィルムを得た(図5参照)。また、比較例3では、バインダー樹脂組成物に導電性粒子を分散させ、剥離フィルム上に塗布、焼成することにより、導電性粒子がランダムに分散された異方性導電フィルムを得た。
評価素子として、外形;1.5mm×13mm、厚み0.5mm、バンプ;25μ×140μm、バンプ間スペース;7.5μm、バンプ高さ;15μm(Au‐plated)の評価用ICを用いた。
評価用ICが接続される評価用ガラス基板として、外形;30mm×50mm、厚み0.5mm、評価用ICのバンプと同サイズ同ピッチの櫛歯状の電極パターンが形成されたITOパターングラスを用いた。
実施例1では、導電性粒子が面積占有率1%となるように規則配列された異方性導電フィルムを用いた。また、実施例1では、評価用ICの実装面に設けられたIC側アライメントマークと、評価用ガラス基板に設けられた基板側アライメントマークとは、平面視でほぼ同じ位置に形成されている。
実施例2では、導電性粒子が面積占有率15%となるように規則配列された異方性導電フィルムを用いた他は、実施例1と同じ条件とした。
実施例3では、導電性粒子が面積占有率35%となるように規則配列された異方性導電フィルムを用いた他は、実施例1と同じ条件とした。
比較例1では、基板側アライメントマークを異方性導電フィルムの転着領域外のIC側アライメントマークと離れた位置に設けた他は、実施例2と同じ条件とした。
比較例2では、導電性粒子が面積占有率50%となるように規則配列された異方性導電フィルムを用いた他は、実施例1と同じ条件とした。
比較例3では、導電性粒子が面積占有率35%となるようにランダムに分散された異方性導電フィルムを用いた他は、実施例1と同じ条件とした。
Claims (10)
- 基板側アライメントマークが設けられた透明基板の表面に、導電性粒子を含有した接着剤を介して部品側アライメントマークが設けられた電子部品を搭載し、
上記透明基板の裏面側から上記基板側アライメントマーク及び上記部品側アライメントマークを撮像し、
上記撮像した画像から上記基板側アライメントマーク及び上記部品側アライメントマークの位置を調整し、上記透明基板に対する上記電子部品の搭載位置を合わせるアライメント方法において、
上記接着剤は、平面視において上記導電性粒子が規則的に配列され、
上記撮像した画像において、上記基板側アライメントマーク又は上記部品側アライメントマークの外側縁の仮想線分に沿って、上記導電性粒子間から臨む上記基板側アライメントマーク又は上記部品側アライメントマークの外側縁が線分として断続的に表れているアライメント方法。 - 上記仮想線分に沿って、上記導電性粒子間から臨む上記線分が、上記仮想線分の25%以上の長さで表れる請求項1記載のアライメント方法。
- 上記撮像した画像において、上記接着剤の上記導電性粒子間領域が65%以上である請求項1又は2に記載のアライメント方法。
- 上記撮像した画像において、上記導電性粒子の面積占有率は35%以内である請求項1又は2に記載のアライメント方法。
- 上記基板側アライメントマーク及び上記部品側アライメントマークを撮像する撮像カメラの分解能は上記導電性粒子の平均粒径以下である請求項1〜4のいずれか1項に記載のアライメント方法。
- 上記基板側アライメントマークは、上記接着剤が設けられる位置に形成されている請求項1〜5のいずれか1項に記載のアライメント方法。
- 基板側アライメントマークが設けられた透明基板の表面に、導電性粒子を含有した接着剤を介して部品側アライメントマークが設けられた電子部品を搭載し、
上記透明基板の裏面側から上記基板側アライメントマークと上記部品側アライメントマークを撮像し、
上記撮像した画像から上記基板側アライメントマーク及び上記部品側アライメントマークの位置を調整し、上記透明基板に対する上記電子部品の搭載位置を合わせた後、上記電子部品を接続する電子部品の接続方法において、
上記接着剤は、平面視において上記導電性粒子が規則的に配列され、
上記撮像した画像において、上記基板側アライメントマーク又は上記部品側アライメントマークの外側縁の仮想線分に沿って、上記導電性粒子間から臨む上記基板側アライメントマーク又は上記部品側アライメントマークの外側縁が線分として断続的に表れている電子部品の接続方法。 - 基板側アライメントマークが設けられた透明基板の表面に、導電性粒子を含有した接着剤を介して部品側アライメントマークが設けられた電子部品を搭載し、
上記透明基板の裏面側から上記基板側アライメントマークと上記部品側アライメントマークを撮像し、
上記撮像した画像から上記基板側アライメントマーク及び上記部品側アライメントマークの位置を調整し、上記透明基板に対する上記電子部品の搭載位置を合わせた後、上記電子部品を接続する上記透明基板に上記電子部品が接続された接続体の製造方法において、
上記接着剤は、平面視において上記導電性粒子が規則的に配列され、
上記撮像した画像において、上記基板側アライメントマーク又は上記部品側アライメントマークの外側縁の仮想線分に沿って、上記導電性粒子間から臨む上記基板側アライメントマーク又は上記部品側アライメントマークの外側縁が線分として断続的に表れている接続体の製造方法。 - 請求項8に記載の方法により製造された接続体。
- 平面視において導電性粒子が規則的に配列された異方性導電フィルムにおいて、
単位面積当たりの上記導電性粒子の面積密度が50%未満とされている異方性導電フィルム。
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- 2014-02-07 JP JP2014022861A patent/JP2015149451A/ja active Pending
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2015
- 2015-02-03 KR KR1020167019759A patent/KR20160118238A/ko active Application Filing
- 2015-02-03 CN CN202110438784.6A patent/CN113382556A/zh active Pending
- 2015-02-03 CN CN201580007486.4A patent/CN105940486A/zh active Pending
- 2015-02-03 US US15/117,326 patent/US20160351532A1/en not_active Abandoned
- 2015-02-03 TW TW104103515A patent/TWI672543B/zh active
- 2015-02-03 WO PCT/JP2015/052924 patent/WO2015119093A1/ja active Application Filing
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Also Published As
Publication number | Publication date |
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WO2015119093A1 (ja) | 2015-08-13 |
KR20160118238A (ko) | 2016-10-11 |
CN105940486A (zh) | 2016-09-14 |
US11049842B2 (en) | 2021-06-29 |
TW201535017A (zh) | 2015-09-16 |
CN113382556A (zh) | 2021-09-10 |
KR20220158082A (ko) | 2022-11-29 |
US20160351532A1 (en) | 2016-12-01 |
US20190206831A1 (en) | 2019-07-04 |
TWI672543B (zh) | 2019-09-21 |
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