JP2015136775A - 研磨方法および研磨装置 - Google Patents
研磨方法および研磨装置 Download PDFInfo
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- JP2015136775A JP2015136775A JP2014010800A JP2014010800A JP2015136775A JP 2015136775 A JP2015136775 A JP 2015136775A JP 2014010800 A JP2014010800 A JP 2014010800A JP 2014010800 A JP2014010800 A JP 2014010800A JP 2015136775 A JP2015136775 A JP 2015136775A
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- 238000005498 polishing Methods 0.000 title claims abstract description 199
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000004140 cleaning Methods 0.000 claims description 31
- 230000032258 transport Effects 0.000 claims description 18
- 238000001035 drying Methods 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 194
- 239000010408 film Substances 0.000 description 96
- 238000005259 measurement Methods 0.000 description 61
- 238000012546 transfer Methods 0.000 description 39
- 239000007788 liquid Substances 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 239000012788 optical film Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
【解決手段】研磨方法は、複数の基板を研磨し、研磨された複数の基板のうち予め指定された少なくとも1枚の基板の膜厚を測定し、複数の基板のうちのいずれか1つの基板を研磨しているときに研磨エラーが起きたときは、その基板の膜厚を測定する工程を含む。
【選択図】図5
Description
本発明の好ましい態様は、前記複数の基板のうちのいずれか1つの基板を研磨しているときに研磨エラーが起きたときは、その基板の研磨終了後に該基板の膜厚を測定することを特徴とする。
本発明の好ましい態様は、研磨エラーが起きたか否かの判断は、基板の研磨終了後に行われることを特徴とする。
2 ロード/アンロード部
3 研磨部
3A,3B,3C,3D 研磨ユニット
4 洗浄部
5 動作制御部
6 第1リニアトランスポータ
7 第2リニアトランスポータ
10 研磨パッド
11 リフタ
12 スイングトランスポータ
16 トップリングシャフト
19 テーブルモータ
20 フロントロード部
21 走行機構
22 搬送ロボット
30A,30B,30C,30D 研磨テーブル
31A,31B,31C,31D トップリング
32A,32B,32C,32D 研磨液供給ノズル
33A,33B,33C,33D ドレッサ
34A,34B,34C,34D アトマイザ
39 研磨終点検出装置
40 膜厚センサ
45 膜厚監視部
72 仮置き台
73 第1の洗浄ユニット
74 第2の洗浄ユニット
75 乾燥ユニット
77 第1搬送ロボット
78 第2搬送ロボット
80 膜厚測定器
85 基板カセット
90 研磨エラー検出部
Claims (6)
- 複数の基板を研磨し、
研磨された前記複数の基板のうち予め指定された少なくとも1枚の基板の膜厚を測定し、
前記複数の基板のうちのいずれか1つの基板を研磨しているときに研磨エラーが起きたときは、その基板の膜厚を測定することを特徴とする研磨方法。 - 研磨された前記複数の基板を洗浄し、
洗浄された前記複数の基板を乾燥させる工程をさらに含むことを特徴とする請求項1に記載の研磨方法。 - 前記複数の基板のうちのいずれか1つの基板を研磨しているときに研磨エラーが起きたときは、その基板の研磨終了後に該基板の膜厚を測定することを特徴とする請求項1に記載の研磨方法。
- 研磨エラーが起きたか否かの判断は、基板の研磨終了後に行われることを特徴とする請求項1に記載の研磨方法。
- 基板を研磨する研磨ユニットと、
研磨された前記基板の膜厚を測定する膜厚測定器と、
複数の基板を前記研磨ユニットに順次搬送し、さらに研磨された前記複数の基板のうち予め指定された少なくとも1枚の基板を前記膜厚測定器に搬送する搬送装置とを備え、
前記搬送装置は、前記複数の基板のうちのいずれか1つの基板を研磨しているときに研磨エラーが起きたときは、その基板を前記膜厚測定器に搬送することを特徴とする研磨装置。 - 基板を洗浄する洗浄ユニットと、
基板を乾燥させる乾燥ユニットとをさらに備えたことを特徴とする請求項5に記載の研磨装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014010800A JP6374169B2 (ja) | 2014-01-23 | 2014-01-23 | 研磨方法および研磨装置 |
KR1020150009142A KR101998453B1 (ko) | 2014-01-23 | 2015-01-20 | 연마 방법 및 연마 장치 |
TW104101917A TWI689373B (zh) | 2014-01-23 | 2015-01-21 | 研磨方法及研磨裝置 |
US14/602,254 US9524913B2 (en) | 2014-01-23 | 2015-01-21 | Polishing method and polishing apparatus |
SG10201500455QA SG10201500455QA (en) | 2014-01-23 | 2015-01-21 | Polishing method and polishing apparatus |
CN201510032404.3A CN104802069B (zh) | 2014-01-23 | 2015-01-22 | 研磨方法及研磨装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014010800A JP6374169B2 (ja) | 2014-01-23 | 2014-01-23 | 研磨方法および研磨装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015136775A true JP2015136775A (ja) | 2015-07-30 |
JP2015136775A5 JP2015136775A5 (ja) | 2016-12-15 |
JP6374169B2 JP6374169B2 (ja) | 2018-08-15 |
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JP2014010800A Active JP6374169B2 (ja) | 2014-01-23 | 2014-01-23 | 研磨方法および研磨装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9524913B2 (ja) |
JP (1) | JP6374169B2 (ja) |
KR (1) | KR101998453B1 (ja) |
CN (1) | CN104802069B (ja) |
SG (1) | SG10201500455QA (ja) |
TW (1) | TWI689373B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9505101B1 (en) * | 2015-06-24 | 2016-11-29 | The Boeing Company | Automated sanding system and method |
US11400563B2 (en) * | 2018-12-07 | 2022-08-02 | Disco Corporation | Processing method for disk-shaped workpiece |
KR20210041654A (ko) * | 2019-10-07 | 2021-04-16 | 삼성전자주식회사 | 반도체 기판 측정 장치, 이를 이용한 반도체 기판 처리 장치 및 반도체 소자 형성 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1140537A (ja) * | 1997-07-10 | 1999-02-12 | Samsung Electron Co Ltd | ウェーハポリシング装置及びウェーハポリシング方法 |
US20050191942A1 (en) * | 2004-02-27 | 2005-09-01 | Chen-Shien Chen | CMP apparatus and process sequence method |
JP2006093180A (ja) * | 2004-09-21 | 2006-04-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US7097534B1 (en) * | 2000-07-10 | 2006-08-29 | Applied Materials, Inc. | Closed-loop control of a chemical mechanical polisher |
JP2009274139A (ja) * | 2008-05-12 | 2009-11-26 | Ebara Corp | 研磨方法及び研磨装置、並びに研磨装置制御用プログラム |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US5885138A (en) * | 1993-09-21 | 1999-03-23 | Ebara Corporation | Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device |
US6447370B1 (en) * | 2001-04-17 | 2002-09-10 | Speedfam-Ipec Corporation | Inline metrology device |
US6967715B2 (en) * | 2002-12-06 | 2005-11-22 | International Business Machines Corporation | Method and apparatus for optical film measurements in a controlled environment |
JP2006231471A (ja) * | 2005-02-25 | 2006-09-07 | Speedfam Co Ltd | 両面ポリッシュ加工機とその定寸制御方法 |
ITBO20070504A1 (it) * | 2007-07-20 | 2009-01-21 | Marposs Spa | Apparecchiatura e metodo per il controllo dello spessore di un elemento in lavorazione |
JP2009050944A (ja) * | 2007-08-24 | 2009-03-12 | Disco Abrasive Syst Ltd | 基板の厚さ測定方法および基板の加工装置 |
US20140141694A1 (en) * | 2012-11-21 | 2014-05-22 | Applied Materials, Inc. | In-Sequence Spectrographic Sensor |
-
2014
- 2014-01-23 JP JP2014010800A patent/JP6374169B2/ja active Active
-
2015
- 2015-01-20 KR KR1020150009142A patent/KR101998453B1/ko active IP Right Grant
- 2015-01-21 SG SG10201500455QA patent/SG10201500455QA/en unknown
- 2015-01-21 TW TW104101917A patent/TWI689373B/zh active
- 2015-01-21 US US14/602,254 patent/US9524913B2/en active Active
- 2015-01-22 CN CN201510032404.3A patent/CN104802069B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1140537A (ja) * | 1997-07-10 | 1999-02-12 | Samsung Electron Co Ltd | ウェーハポリシング装置及びウェーハポリシング方法 |
US7097534B1 (en) * | 2000-07-10 | 2006-08-29 | Applied Materials, Inc. | Closed-loop control of a chemical mechanical polisher |
US20050191942A1 (en) * | 2004-02-27 | 2005-09-01 | Chen-Shien Chen | CMP apparatus and process sequence method |
JP2006093180A (ja) * | 2004-09-21 | 2006-04-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2009274139A (ja) * | 2008-05-12 | 2009-11-26 | Ebara Corp | 研磨方法及び研磨装置、並びに研磨装置制御用プログラム |
Also Published As
Publication number | Publication date |
---|---|
CN104802069B (zh) | 2018-09-28 |
CN104802069A (zh) | 2015-07-29 |
US9524913B2 (en) | 2016-12-20 |
US20150221562A1 (en) | 2015-08-06 |
SG10201500455QA (en) | 2015-08-28 |
KR101998453B1 (ko) | 2019-07-09 |
JP6374169B2 (ja) | 2018-08-15 |
TW201536477A (zh) | 2015-10-01 |
TWI689373B (zh) | 2020-04-01 |
KR20150088193A (ko) | 2015-07-31 |
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