JP2015135960A5 - - Google Patents
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- Publication number
- JP2015135960A5 JP2015135960A5 JP2014255131A JP2014255131A JP2015135960A5 JP 2015135960 A5 JP2015135960 A5 JP 2015135960A5 JP 2014255131 A JP2014255131 A JP 2014255131A JP 2014255131 A JP2014255131 A JP 2014255131A JP 2015135960 A5 JP2015135960 A5 JP 2015135960A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrostatic
- chuck assembly
- support surface
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 claims 32
- 239000004065 semiconductor Substances 0.000 claims 30
- 238000000034 method Methods 0.000 claims 14
- 229910010293 ceramic material Inorganic materials 0.000 claims 10
- 239000004020 conductor Substances 0.000 claims 4
- 238000007599 discharging Methods 0.000 claims 4
- 230000003068 static effect Effects 0.000 claims 2
- 239000006227 byproduct Substances 0.000 claims 1
- 238000004891 communication Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/136,826 | 2013-12-20 | ||
| US14/136,826 US9101038B2 (en) | 2013-12-20 | 2013-12-20 | Electrostatic chuck including declamping electrode and method of declamping |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015135960A JP2015135960A (ja) | 2015-07-27 |
| JP2015135960A5 true JP2015135960A5 (enExample) | 2018-01-18 |
| JP6633275B2 JP6633275B2 (ja) | 2020-01-22 |
Family
ID=53401700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014255131A Active JP6633275B2 (ja) | 2013-12-20 | 2014-12-17 | デクランプ電極を備えた静電チャックと脱離方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9101038B2 (enExample) |
| JP (1) | JP6633275B2 (enExample) |
| KR (1) | KR102130180B1 (enExample) |
| TW (1) | TWI651799B (enExample) |
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| US9754765B2 (en) | 2013-09-30 | 2017-09-05 | Applied Materials, Inc. | Electrodes for etch |
| KR20160015510A (ko) * | 2014-07-30 | 2016-02-15 | 삼성전자주식회사 | 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법 |
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| KR102649333B1 (ko) * | 2015-12-07 | 2024-03-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 정전 척들을 사용하여 기판들을 클램핑 및 디클램핑하기 위한 방법 및 장치 |
| DE102016200506B4 (de) * | 2016-01-17 | 2024-05-02 | Robert Bosch Gmbh | Ätzvorrichtung und Ätzverfahren |
| US11532497B2 (en) * | 2016-06-07 | 2022-12-20 | Applied Materials, Inc. | High power electrostatic chuck design with radio frequency coupling |
| JP6789099B2 (ja) * | 2016-12-26 | 2020-11-25 | 東京エレクトロン株式会社 | 計測方法、除電方法及びプラズマ処理装置 |
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| JP6924618B2 (ja) * | 2017-05-30 | 2021-08-25 | 東京エレクトロン株式会社 | 静電チャック及びプラズマ処理装置 |
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| US10904996B2 (en) | 2017-09-20 | 2021-01-26 | Applied Materials, Inc. | Substrate support with electrically floating power supply |
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| US10811296B2 (en) | 2017-09-20 | 2020-10-20 | Applied Materials, Inc. | Substrate support with dual embedded electrodes |
| KR102450476B1 (ko) * | 2018-02-28 | 2022-10-05 | 주식회사 미코세라믹스 | 정전척 히터 및 그 제조 방법 |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| KR20250100790A (ko) | 2019-01-22 | 2025-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| CN113439330A (zh) * | 2019-02-12 | 2021-09-24 | 朗姆研究公司 | 具有陶瓷单体的静电卡盘 |
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| WO2020229302A1 (en) * | 2019-05-10 | 2020-11-19 | Asml Netherlands B.V. | Apparatus comprising an electrostatic clamp and method |
| JP7712269B2 (ja) * | 2019-10-29 | 2025-07-23 | エーエスエムエル ホールディング エヌ．ブイ． | リソグラフィ装置および静電クランプの設計 |
| US11043387B2 (en) | 2019-10-30 | 2021-06-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US20210159107A1 (en) * | 2019-11-21 | 2021-05-27 | Applied Materials, Inc. | Edge uniformity tunability on bipolar electrostatic chuck |
| KR102234220B1 (ko) * | 2020-07-24 | 2021-03-30 | 이준호 | 도전성의 정전척 리프트 핀, 이를 포함하는 정전척 및 이들을 이용한 반도체 생산방법 |
| US11462388B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Plasma processing assembly using pulsed-voltage and radio-frequency power |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US12033881B2 (en) * | 2021-03-18 | 2024-07-09 | Applied Materials, Inc. | Reduced localized force in electrostatic chucking |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
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| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| TWI802407B (zh) * | 2022-05-12 | 2023-05-11 | 宏貿科技有限公司 | 靜電卡盤 |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| US20240408712A1 (en) * | 2023-06-06 | 2024-12-12 | Applied Materials, Inc. | Ceramic cooling base |
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| US20250317077A1 (en) * | 2024-04-04 | 2025-10-09 | Applied Materials, Inc. | Electrostatic chuck with perforated or screened chucking electrode |
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-
2013
- 2013-12-20 US US14/136,826 patent/US9101038B2/en active Active
-
2014
- 2014-12-17 JP JP2014255131A patent/JP6633275B2/ja active Active
- 2014-12-19 KR KR1020140184790A patent/KR102130180B1/ko active Active
- 2014-12-19 TW TW103144452A patent/TWI651799B/zh active
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