JP2015131748A5 - - Google Patents

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Publication number
JP2015131748A5
JP2015131748A5 JP2014005043A JP2014005043A JP2015131748A5 JP 2015131748 A5 JP2015131748 A5 JP 2015131748A5 JP 2014005043 A JP2014005043 A JP 2014005043A JP 2014005043 A JP2014005043 A JP 2014005043A JP 2015131748 A5 JP2015131748 A5 JP 2015131748A5
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JP
Japan
Prior art keywords
single crystal
silicon carbide
crucible lid
carbide single
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014005043A
Other languages
English (en)
Japanese (ja)
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JP6237248B2 (ja
JP2015131748A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2014005043A external-priority patent/JP6237248B2/ja
Priority to JP2014005043A priority Critical patent/JP6237248B2/ja
Priority to US15/111,013 priority patent/US10184191B2/en
Priority to CN201480073219.2A priority patent/CN105917034A/zh
Priority to DE112014006171.9T priority patent/DE112014006171T5/de
Priority to PCT/JP2014/080849 priority patent/WO2015107772A1/ja
Publication of JP2015131748A publication Critical patent/JP2015131748A/ja
Publication of JP2015131748A5 publication Critical patent/JP2015131748A5/ja
Publication of JP6237248B2 publication Critical patent/JP6237248B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014005043A 2014-01-15 2014-01-15 炭化珪素単結晶の製造方法 Expired - Fee Related JP6237248B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014005043A JP6237248B2 (ja) 2014-01-15 2014-01-15 炭化珪素単結晶の製造方法
PCT/JP2014/080849 WO2015107772A1 (ja) 2014-01-15 2014-11-21 炭化珪素単結晶の製造方法
CN201480073219.2A CN105917034A (zh) 2014-01-15 2014-11-21 碳化硅单晶的制造方法
DE112014006171.9T DE112014006171T5 (de) 2014-01-15 2014-11-21 Verfahren für die Herstellung eines Siliziumcarbid-Einkristalls
US15/111,013 US10184191B2 (en) 2014-01-15 2014-11-21 Method for manufacturing silicon carbide single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014005043A JP6237248B2 (ja) 2014-01-15 2014-01-15 炭化珪素単結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2015131748A JP2015131748A (ja) 2015-07-23
JP2015131748A5 true JP2015131748A5 (OSRAM) 2016-10-20
JP6237248B2 JP6237248B2 (ja) 2017-11-29

Family

ID=53542676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014005043A Expired - Fee Related JP6237248B2 (ja) 2014-01-15 2014-01-15 炭化珪素単結晶の製造方法

Country Status (5)

Country Link
US (1) US10184191B2 (OSRAM)
JP (1) JP6237248B2 (OSRAM)
CN (1) CN105917034A (OSRAM)
DE (1) DE112014006171T5 (OSRAM)
WO (1) WO2015107772A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7735658B2 (ja) * 2020-12-28 2025-09-09 株式会社レゾナック 炭化珪素単結晶製造装置および炭化珪素単結晶の製造方法
JP7639335B2 (ja) * 2020-12-28 2025-03-05 株式会社レゾナック 炭化珪素単結晶製造装置および炭化珪素単結晶の製造方法
CN112981524B (zh) * 2021-02-23 2023-03-07 芜湖予秦半导体科技有限公司 一种物理气相传输法用坩埚盖及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
US6328796B1 (en) * 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
FR2849714B1 (fr) * 2003-01-07 2007-03-09 Recyclage par des moyens mecaniques d'une plaquette comprenant une structure multicouches apres prelevement d'une couche mince
JP2005255420A (ja) * 2004-03-09 2005-09-22 Ngk Insulators Ltd 炭化珪素単結晶膜の製造方法および炭化珪素単結晶膜
JP4556634B2 (ja) * 2004-11-18 2010-10-06 パナソニック株式会社 種結晶固定部及び種結晶固定方法
JP4894717B2 (ja) 2007-10-23 2012-03-14 株式会社デンソー 炭化珪素単結晶基板の製造方法
JP5012655B2 (ja) * 2008-05-16 2012-08-29 三菱電機株式会社 単結晶成長装置
JP5061038B2 (ja) * 2008-06-13 2012-10-31 株式会社ブリヂストン 炭化ケイ素単結晶の研削方法
JP2010064918A (ja) * 2008-09-10 2010-03-25 Showa Denko Kk 炭化珪素単結晶の製造方法、炭化珪素単結晶ウェーハ及び炭化珪素単結晶半導体パワーデバイス
JP4985625B2 (ja) * 2008-12-02 2012-07-25 三菱電機株式会社 炭化珪素単結晶の製造方法
JP5346788B2 (ja) * 2009-11-30 2013-11-20 昭和電工株式会社 炭化珪素単結晶の製造方法
JP2011251884A (ja) * 2010-06-03 2011-12-15 Bridgestone Corp 炭化ケイ素単結晶の製造装置
KR20130014272A (ko) * 2011-07-29 2013-02-07 엘지이노텍 주식회사 잉곳 제조 장치
JP2013067522A (ja) * 2011-09-21 2013-04-18 Sumitomo Electric Ind Ltd 炭化珪素結晶の製造方法

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