JP2015088650A - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP2015088650A JP2015088650A JP2013226685A JP2013226685A JP2015088650A JP 2015088650 A JP2015088650 A JP 2015088650A JP 2013226685 A JP2013226685 A JP 2013226685A JP 2013226685 A JP2013226685 A JP 2013226685A JP 2015088650 A JP2015088650 A JP 2015088650A
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- solar cell
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
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Abstract
【解決手段】半導体基板の一方の面にプリウェット用組成物をスピンコートする第1塗布工程と、第1の不純物元素を有する拡散剤と溶剤とを含む拡散材料を、前記プリウェット用組成物がスピンコートされた前記一方の面にスピンコートし、前記拡散剤の塗膜を形成する第2塗布工程と、前記塗膜が形成された前記半導体基板を熱処理し、前記拡散剤が有する不純物元素を拡散させた第1不純物拡散層を形成する第1不純物拡散層形成工程と、を有する太陽電池の製造方法。
【選択図】図2
Description
第1の不純物元素を有する拡散剤と溶剤とを含む拡散材料を、前記プリウェット用組成物がスピンコートされた前記一方の面にスピンコートし、前記拡散剤の塗膜を形成する第2塗布工程と、前記塗膜が形成された前記半導体基板を熱処理し、前記拡散剤が有する不純物元素を拡散させた第1不純物拡散層を形成する第1不純物拡散層形成工程と、を有する。
この方法によれば、基板表面がプリウェット用組成物で濡れた状態で拡散材料をスピンコートするため、容易にかつ短時間で拡散材料を濡れ広げることができる。
この方法によれば、凹凸形状が形成された一方の面は、プリウェット用組成物を保持しやすく、一方の面の全面が膜状のプリウェット用組成物で濡れた状態を維持しやすい。そのため、拡散材料のスピンコートが容易となる。
この方法によれば、塗膜を完全に乾燥させた後に基板回転を停止させる場合と比べ、タクトタイムを短縮することができる。また、基板回転時間が短くなるため、塗膜に風切りによる悪影響が生じにくい。
この方法によれば、一方の面に塗布されるプリウェット用組成物及び拡散材料には常に遠心力が加わる。そのため、プリウェット用組成物及び拡散材料は他方の面に回り込むことなく周囲に飛散し、他方の面の汚染を抑制することができる。
この方法によれば、拡散材料の塗りムラが生じにくくなる。
この方法によれば、高性能な太陽電池を製造することができる。
以下、図2〜5を参照しながら、太陽電池の製造方法を説明する。
図3(a)に示すように、本実施形態の太陽電池の製造方法で用いる基板Wは、平面視円形状のウエハWAについて、円弧の一部を切り取った角が丸い略矩形状を有している。このような基板Wの加工は、太陽電池の製造工程の一部であってもよく、予め略矩形に加工された基板Wを用いて太陽電池の製造工程を実施してもよい。
次いで、図3(c)に示すように、基板Wの一方の面Waに向けて、ノズル26からプリウェット用組成物210を供給し、スピンコートすることで、一方の面Waの全面にプリウェット用組成物210の膜を形成する(図2のステップS121)。詳細な塗布条件については後述する。
メチル−3−メトキシプロピオネート、及びエチル−3−エトキシプロピオネート等のアルキルカルボン酸エステル;
エチレングリコール、ジエチレングリコール、及びプロピレングリコール等の多価アルコール;
エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノプロピルエーテル、エチレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールモノブチルエーテル、3−メトキシ−3−メチル−1−ブタノール、3−メトキシ−1−ブタノール、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、及びプロピレングリコールモノメチルエーテルアセテート等の多価アルコール誘導体;
酢酸、及びプロピオン酸等の脂肪酸;
アセトン、メチルエチルケトン、2−ヘプタノンのようなケトン;
を用いることができる。
本実施形態においては、プリウェット用組成物210としてPGME:DIW=1:1混合溶媒を用いることとして説明する。
次いで、図3(d)に示すように、基板Wの一方の面Waに向けて、ノズル23から拡散剤を含む拡散材料200を供給し、スピンコートすることで、一方の面Waの全面に拡散剤の塗膜を形成する(図2のステップS122)。詳細な塗布条件については後述する。
(RO)3Ga、RGa(OH)、RGa(OH)2、R2Ga〔OC(CH3)=CH−CO−(CH3)〕等のガリウム化合物;
P2O5、NH4H2・PO4、(RO)3P、(RO)2P(OH)、(RO)3PO、(RO)2P2O3(OH)3、(RO)P(OH)2等のリン化合物;
H3AsO3、H2AsO4、(RO)3As、(RO)5As、(RO)2As(OH)、R3AsO、RAs=AsR等のヒ素化合物;
H3SbO4、(RO)3Sb、SbX3、SbOX、Sb4O5X等のアンチモン化合物;
Zn(OR)2、ZnX2、Zn(NO2)2等の亜鉛化合物;
が挙げられる。上記式中、Rはハロゲン原子、アルキル基、アルケニル基又はアリール基、Xはハロゲン原子を表す。これらの化合物の中では、酸化ホウ素(B2O3)、酸化リン(P2O5)等を好ましく用いることができる。
本実施形態においては、拡散剤として酸化ホウ素を用いることとして説明する。
フェニルトリメトキシシラン、及びフェニルトリエトキシシラン等のフェニルトリアルコキシシラン;等
ジフェニルメトキシシラン、及びジフェニルエトキシシラン等のジフェニルジアルコキシシラン;等
トリフェニルメトキシシラン、トリフェニルエトキシシラン等のトリフェニルアルコキシシラン;等
次いで、図3(e)に示すように、拡散剤の塗膜を形成した基板Wを熱処理し、基板Wに不純物元素を拡散させて、基板の表面に不純物拡散層を形成する(図2のステップS13)。
次いで、図5に示すように、基板の他方の面に第2の不純物元素を拡散させて、不純物拡散層を形成する(図2のステップS14)。
T1〜T2間は、例えば0.5秒以上5秒以下である。本実施形態の製造方法においては、T1〜T2間は5秒である。
T2〜T3間は、例えば0.5秒以上1秒以下である。本実施形態の製造方法においては、T2〜T3間は1秒である。
T3〜T4間は、例えば0.1秒以上1秒以下である。
T4〜T5間は、例えば3秒以上8秒以下である。本実施形態の製造方法においては、T4〜T5間は5秒である。
T5〜T6間は、例えば0.1秒以上1秒以下である。
図8(a)は本実施形態の太陽電池の製造方法を実施する基板処理装置の平面図であり、図8(b)は図8(a)のA−A線矢視による断面図である。図9は基板処理装置100の電気的構成を示すブロック図である。
ノズル部21は、図11に示すように、拡散材料200を滴下する開口部23aが形成された第1ノズル23と、プリウェット用組成物210を滴下する開口部26aが形成された第2ノズル26と、第1ノズル23及び第2ノズル26を収容する収容部24と、を有している。
また、第2ノズル26の内部にはプリウェット用組成物210を開口部63aに流通させる図示しない流通路が設けられており、この流通路には図示しないプリウェット用組成物供給源が接続されている。このプリウェット用組成物供給源は例えば図示しないポンプを有しており、当該ポンプでプリウェット用組成物を開口部26aへと押し出すことで開口部26aからプリウェット用組成物210を滴下させる。
塗布装置10における拡散材料の塗布工程は、載置工程S1と、ノズル移動工程S2と、ノズル下降工程S3と、プリウェット用組成物滴下工程S4と、拡散材料滴下工程S5と、ノズル上昇工程S6と、ノズル退避工程S7と、を含む。
塗布装置10で行う塗布工程は、上述の図2で示すステップS12に対応する。
ノズル移動工程S2は、基板載置位置にあるチャック部20の上方にノズル部21を移動する工程である。
ノズル下降工程S3は、基板Wが載置されたチャック部20を基板載置ポジションからカップ部22内で回転動作を行う回転ポジションへと移動するとともにノズル部21を下降させる工程である。
プリウェット用組成物滴下工程S4は、回転ポジションまで移動したチャック部20上の基板Wに対して第2ノズル26の開口部26aからプリウェット用組成物210を滴下するとともにチャック部20を回転させる工程である。
拡散材料滴下工程S5は、プリウェット用組成物210を滴下した基板Wに対して第1ノズル23の開口部23aから拡散材料200を滴下するとともにチャック部20を回転させる工程である。
ノズル上昇工程S6は、ノズル部21を上昇させることでチャック部20から退避させる工程である。
ノズル退避工程S7は、カップ部22内からノズル部21を退避させる工程である。
まず、図13(a)に示すように、基板処理装置100は搬入部1に搬入された基板Wを第1搬送装置6により塗布装置10へと受け渡す(載置工程S1)。このとき、チャック部20は基板支持部材62により搬送される基板Wを載置する載置ポジションまで上昇している。また、基板処理装置100は、次の塗布工程に備えて、搬入部1内に他の基板Wを搬入しておく。
これにより、基板Wの中央部WCに滴下された拡散材料200は、基板Wの全面へと濡れ拡がる。これにより、基板Wの表面から拡散材料200を振り切ることができる。
また、基板W上に形成される拡散剤の塗膜を半乾燥状態とすることができる。
以下に本発明を実施例により説明するが、本発明はこれらの実施例に限定されるものではない。
n型単結晶シリコン基板(対角:200mm、辺(直線部分):156mm、厚み:180μm)の一面をアルカリ溶液で異方性エッチングし、一面に凹凸形状を形成した。
拡散材料としては、ボロン拡散剤を含有しPGMEを溶媒とするボロン系拡散材料(EPLUS(登録商標)、SC−1008、東京応化工業社製)を用いた。
プリウェットを行わないこと以外は実施例と同様にして、比較例の太陽電池基板を製造した。
Claims (6)
- 半導体基板の一方の面にプリウェット用組成物をスピンコートする第1塗布工程と、
第1の不純物元素を有する拡散剤と溶剤とを含む拡散材料を、前記プリウェット用組成物がスピンコートされた前記一方の面にスピンコートし、前記拡散剤の塗膜を形成する第2塗布工程と、
前記塗膜が形成された前記半導体基板を熱処理し、前記拡散剤が有する不純物元素を拡散させた第1不純物拡散層を形成する第1不純物拡散層形成工程と、を有する太陽電池の製造方法。 - 前記第1塗布工程に先立って、少なくとも前記一方の面に凹凸形状を形成する工程を有する請求項1に記載の太陽電池の製造方法。
- 前記第2塗布工程において、半乾燥状態の前記塗膜を形成する請求項1または2に記載の太陽電池の製造方法。
- 前記第1塗布工程の開始から前記第2塗布工程の終了まで、前記半導体基板の回転を止めることなく連続してスピンコートを行う請求項1から3のいずれか1項に記載の太陽電池の製造方法。
- 前記第2塗布工程における最大基板回転数は、前記第1塗布工程における最大基板回転数よりも大きく、
前記第2塗布工程においては、前記拡散材料を前記一方の面に供給した後に、前記第1塗布工程の基板回転数から前記第2塗布工程の基板回転数に増加させる請求項4に記載の太陽電池の製造方法。 - 前記第1不純物拡散層形成工程の後に、前記半導体基板の他方の面に第2の不純物元素を拡散させた第2不純物拡散層を形成する工程を有する請求項1から5のいずれか1項に記載の太陽電池の製造方法。
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CN108110090B (zh) * | 2018-01-11 | 2020-03-06 | 江苏顺风光电科技有限公司 | 一种n型双面电池制备方法 |
US20220148820A1 (en) * | 2019-01-30 | 2022-05-12 | Tégula Soluções Para Telhados Ltda | Photovoltaic cell, method for manufacturing an encapsulated photovoltaic cell, electrical connection unit for a photovoltaic tile, and photovoltaic tile |
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