JP2015065219A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2015065219A JP2015065219A JP2013196963A JP2013196963A JP2015065219A JP 2015065219 A JP2015065219 A JP 2015065219A JP 2013196963 A JP2013196963 A JP 2013196963A JP 2013196963 A JP2013196963 A JP 2013196963A JP 2015065219 A JP2015065219 A JP 2015065219A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 235
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000010248 power generation Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
Description
図1は、第1の実施形態における太陽電池の模式的平面図である。図2は、図1に示すII−II線に沿う断面の一部を拡大して示す模式的断面図である。
図2に示すように、n型の半導体積層構造12は、p型の領域R2まで延びるように形成されている。具体的には、絶縁層18のp型の領域R2側の端部18aから、さらにp型の領域R2側に突き出るように、n型の半導体積層構造12が形成されている。このため、p型の領域R2の両端部においては、n型の半導体積層構造12の上に直接p型の半導体積層構造13が形成された重なり領域R4が設けられている。重なり領域R4においては、n型の半導体基板10の上に、n型の半導体積層構造12及びp型の半導体積層構造13が、この順序で積層されている。したがって、p/i/n/i/nの半導体積層構造が形成されている。
以下、図4〜図11を参照して、本実施形態の太陽電池1の製造方法について説明する。
図12は、第2の実施形態における重なり領域R4を示す模式的平面図である。図13は、図12に示すXIII−XIII線に沿うn型の領域R1とp型の領域R2の断面を示す模式的断面図である。
図14は、第3の実施形態における重なり領域R4を示す模式的平面図である。本実施形態では、図14に示すように、平面視において、絶縁層18に、端部18aを有する凸部と、端部18bを有する凹部とが形成されている。本実施形態では、第1の方向(y方向)に沿って凹部が複数形成されており、第1の方向(y方向)において隣接する凹部間の間隔d1〜d5(重なり領域R4を含む凸部のy方向の幅)が異なるようにそれぞれの凹部が形成されている。また、凹部間の間隔は、3種類以上の互いに異なる間隔d1〜d5となるように形成されている。
図15は、第4の実施形態におけるn型の領域R1とp型の領域R2a及びR2bの断面を示す模式的断面図である。
10…半導体基板
10a…第2の主面(受光面)
10b…第1の主面(裏面)
11…光
12…n型の半導体積層構造
12i…i型非晶質半導体層
12n…n型非晶質半導体層
13…p型の半導体積層構造
13i…i型非晶質半導体層
13p…p型非晶質半導体層
14…n側電極
14A,15A…バスバー
14B,15B…フィンガー
15…p側電極
16…絶縁層
17i…i型非晶質半導体層
17n…n型非晶質半導体層
18…絶縁層
18a,18b…絶縁層の端部
19a〜19d…第1〜第4の導電層
21…i型非晶質半導体層
22…n型非晶質半導体層
23…絶縁層
23a…絶縁層の周辺部
23b…絶縁層の端部
24…i型非晶質半導体層
25…p型非晶質半導体層
R1…n型の領域
R2…p型の領域
R3…絶縁領域
R4…重なり領域
R5…ターン領域
Claims (8)
- 第1の主面及び第2の主面を有し、かつ一導電型である半導体基板と、
前記第1の主面上に設けられる一導電型の半導体層構造を有する一導電型の領域と、
前記第1の主面上に設けられる他導電型の半導体層構造を有する他導電型の領域とを備え、
前記一導電型の半導体層構造が前記他導電型の領域まで延びるように形成されており、これによって前記一導電型の半導体層構造の上に前記他導電型の半導体層構造が形成された重なり領域が設けられている、太陽電池。 - 前記一導電型の半導体層構造が、前記第1の主面上に設けられる第1の真性半導体層と、前記第1の真性半導体層の上に設けられる一導電型の半導体層とを有する一導電型の半導体積層構造であり、
前記他導電型の半導体層構造が、前記第1の主面上に設けられる第2の真性半導体層と、前記第2の真性半導体層の上に直接設けられる他導電型の半導体層とを有する他導電型の半導体積層構造である、請求項1に記載の太陽電池。 - 前記一導電型の領域及び前記他導電型の領域が、第1の方向に延びるように形成されており、前記重なり領域も、前記第1の方向に延びるように形成されている、請求項1または2に記載の太陽電池。
- 前記重なり領域の一部が、前記第1の方向と交差する方向である第2の方向に延びるように形成されている、請求項3に記載の太陽電池。
- 前記重なり領域に、前記一導電型の領域に向かってくぼむ凹部が形成されることにより、前記第1の方向に延びる領域と前記第2の方向に延びる領域が形成されている、請求項4に記載の太陽電池。
- 前記第1の方向に沿って前記凹部が複数形成されており、第1の方向において隣接する凹部間の間隔が異なるように前記凹部が形成されている、請求項5に記載の太陽電池。
- 前記凹部間の間隔が、3種類以上の互いに異なる間隔となるように前記凹部が形成されている、請求項6に記載の太陽電池。
- 前記一導電型がn型であり、前記他導電型がp型である、請求項1〜7のいずれか一項に記載の太陽電池。
Priority Applications (3)
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JP2013196963A JP6425195B2 (ja) | 2013-09-24 | 2013-09-24 | 太陽電池 |
EP14185957.9A EP2851963A1 (en) | 2013-09-24 | 2014-09-23 | Solar cell |
US14/493,393 US9780241B2 (en) | 2013-09-24 | 2014-09-23 | Solar cell |
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JP2013196963A JP6425195B2 (ja) | 2013-09-24 | 2013-09-24 | 太陽電池 |
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JP2015065219A true JP2015065219A (ja) | 2015-04-09 |
JP6425195B2 JP6425195B2 (ja) | 2018-11-21 |
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JP2013196963A Active JP6425195B2 (ja) | 2013-09-24 | 2013-09-24 | 太陽電池 |
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US (1) | US9780241B2 (ja) |
EP (1) | EP2851963A1 (ja) |
JP (1) | JP6425195B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017168977A1 (ja) * | 2016-03-29 | 2017-10-05 | パナソニックIpマネジメント株式会社 | 太陽電池 |
WO2021166748A1 (ja) * | 2020-02-17 | 2021-08-26 | パナソニック株式会社 | 太陽電池セル |
WO2021230227A1 (ja) * | 2020-05-13 | 2021-11-18 | 株式会社カネカ | 太陽電池および太陽電池製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
WO2012017914A1 (ja) * | 2010-08-02 | 2012-02-09 | 三洋電機株式会社 | 太陽電池の製造方法 |
WO2012018119A1 (ja) * | 2010-08-06 | 2012-02-09 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
WO2012132729A1 (ja) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
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FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
JP5230222B2 (ja) | 2008-02-21 | 2013-07-10 | 三洋電機株式会社 | 太陽電池 |
JP5485062B2 (ja) | 2010-07-30 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池 |
JP2013033832A (ja) | 2011-08-01 | 2013-02-14 | Sanyo Electric Co Ltd | 太陽電池モジュール |
-
2013
- 2013-09-24 JP JP2013196963A patent/JP6425195B2/ja active Active
-
2014
- 2014-09-23 US US14/493,393 patent/US9780241B2/en active Active
- 2014-09-23 EP EP14185957.9A patent/EP2851963A1/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
WO2012017914A1 (ja) * | 2010-08-02 | 2012-02-09 | 三洋電機株式会社 | 太陽電池の製造方法 |
WO2012018119A1 (ja) * | 2010-08-06 | 2012-02-09 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
WO2012132729A1 (ja) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017168977A1 (ja) * | 2016-03-29 | 2017-10-05 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JPWO2017168977A1 (ja) * | 2016-03-29 | 2019-01-10 | パナソニックIpマネジメント株式会社 | 太陽電池 |
US10672931B2 (en) | 2016-03-29 | 2020-06-02 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell |
WO2021166748A1 (ja) * | 2020-02-17 | 2021-08-26 | パナソニック株式会社 | 太陽電池セル |
WO2021230227A1 (ja) * | 2020-05-13 | 2021-11-18 | 株式会社カネカ | 太陽電池および太陽電池製造方法 |
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Publication number | Publication date |
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US9780241B2 (en) | 2017-10-03 |
US20150083214A1 (en) | 2015-03-26 |
EP2851963A1 (en) | 2015-03-25 |
JP6425195B2 (ja) | 2018-11-21 |
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