JP2015065194A - 配線基板およびその製造方法 - Google Patents
配線基板およびその製造方法 Download PDFInfo
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- JP2015065194A JP2015065194A JP2013196451A JP2013196451A JP2015065194A JP 2015065194 A JP2015065194 A JP 2015065194A JP 2013196451 A JP2013196451 A JP 2013196451A JP 2013196451 A JP2013196451 A JP 2013196451A JP 2015065194 A JP2015065194 A JP 2015065194A
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- wiring
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- support substrate
- hole
- insulating layer
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- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 176
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 91
- 229910052710 silicon Inorganic materials 0.000 claims description 91
- 239000010703 silicon Substances 0.000 claims description 91
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 230000008569 process Effects 0.000 abstract description 32
- 239000010410 layer Substances 0.000 description 160
- 238000005530 etching Methods 0.000 description 46
- 230000015572 biosynthetic process Effects 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 11
- 239000003550 marker Substances 0.000 description 10
- 238000011161 development Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- VUTZJLBCAXKGCR-UHFFFAOYSA-N C1CCCCCCC1.F.F.F.F.F.F.F.F Chemical compound C1CCCCCCC1.F.F.F.F.F.F.F.F VUTZJLBCAXKGCR-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
Abstract
【解決手段】配線基板を、支持基板31と、絶縁層32と、配線層33とを備える構成とする。支持基板31は、一方の面に開口部を有する穴34が形成されている。絶縁層32は、支持基板31の開口部を有する面とは反対側の面に形成されている。配線層33は、絶縁層32上に形成された所定の構造の配線パターンを有する。また、配線パターンを支持基板31の所定の面に投影した場合の正射影と、穴34を支持基板31の所定の面に投影した場合の正射影が共通部分を有する。
【選択図】 図7
Description
12 BOX層
13 SOI層
14 絶縁層
15 配線層
16 穴
21 支持基板
22 絶縁層
23 配線層
24 穴
31 支持基板
32 絶縁層
33 配線層
34 穴
41 信号配線
42 GND配線
Claims (8)
- 一方の面に開口部を有する穴が形成された支持基板と、
前記支持基板の前記開口部を有する面とは反対側の面に形成された絶縁層と、
前記絶縁層上に形成された所定の構造の配線パターンを有する配線層とを備え、
前記配線パターンを前記支持基板の所定の面に投影した場合の正射影と、前記穴を前記支持基板の前記所定の面に投影した場合の正射影が共通部分を有することを特徴とする配線基板。 - 前記穴は格子状に配置されていることを特徴とする請求項1に記載の配線基板。
- 前記支持基板および前記絶縁層の間に、シリコン酸化膜層と、単結晶シリコン層とを前記シリコン基板の側から順に備え、
前記穴は、前記シリコン酸化膜側の面まで前記支持基板を貫通していることを特徴とする請求項1または2いずれかに記載の配線基板。 - 前記穴は前記支持基板を貫通していないことを特徴とする請求項1または2いずれかに記載の配線基板。
- 支持基板に一方の面の側から穴を形成する工程と、
前記支持基板の前記穴を形成した側とは反対側の面に絶縁層を形成する工程と、
前記絶縁層上に所定の構造の配線パターンを形成する工程とを含み、
前記穴および前記配線パターンは、前記配線パターンを前記支持基板の所定の面に投影した場合の正射影と、前記穴を前記支持基板の前記所定の面に投影した場合の正射影が共通部分を有するように形成することを特徴とする配線基板の製造方法。 - 前記穴は格子状に配置することを特徴とする請求項5に記載の配線基板の製造方法。
- 前記支持基板上にシリコン酸化膜層を形成する工程と、
前記シリコン酸化膜層上に前記単結晶シリコン層を形成する工程とをさらに含み、
前記穴を形成する工程は前記シリコン酸化膜層を形成する工程よりも後に実施され、
前記穴は前記支持基板を貫通するように形成されることを特徴とする請求項5または6いずれかに記載の配線基板の製造方法。 - 前記穴は前記支持基板を貫通しないように形成されることを特徴とする請求項5または6いずれかに記載の配線基板の製造方法。
Priority Applications (2)
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---|---|---|---|
JP2013196451A JP5880508B2 (ja) | 2013-09-24 | 2013-09-24 | 配線基板およびその製造方法 |
US14/494,974 US9666542B2 (en) | 2013-09-24 | 2014-09-24 | Wiring substrate and manufacturing method thereof |
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JP2013196451A JP5880508B2 (ja) | 2013-09-24 | 2013-09-24 | 配線基板およびその製造方法 |
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JP2015065194A true JP2015065194A (ja) | 2015-04-09 |
JP5880508B2 JP5880508B2 (ja) | 2016-03-09 |
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US (1) | US9666542B2 (ja) |
JP (1) | JP5880508B2 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168288A (ja) * | 1999-12-13 | 2001-06-22 | Seiko Epson Corp | 半導体装置 |
JP2005509286A (ja) * | 2001-11-09 | 2005-04-07 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 高周波測定用集積半導体素子およびその使用 |
JP2007507093A (ja) * | 2003-09-26 | 2007-03-22 | ユニべルシテ・カトリック・ドゥ・ルベン | 抵抗損を低減させた積層型半導体構造の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6492719B2 (en) * | 1999-07-30 | 2002-12-10 | Hitachi, Ltd. | Semiconductor device |
US6765298B2 (en) * | 2001-12-08 | 2004-07-20 | National Semiconductor Corporation | Substrate pads with reduced impedance mismatch and methods to fabricate substrate pads |
US20060238984A1 (en) * | 2005-04-20 | 2006-10-26 | Belady Christian L | Thermal dissipation device with thermal compound recesses |
JPWO2007083354A1 (ja) | 2006-01-17 | 2009-06-11 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP2009135430A (ja) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP4946796B2 (ja) * | 2007-10-29 | 2012-06-06 | ヤマハ株式会社 | 振動トランスデューサおよび振動トランスデューサの製造方法 |
US7851318B2 (en) * | 2007-11-01 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device |
JP5195192B2 (ja) | 2008-09-11 | 2013-05-08 | 沖電気工業株式会社 | コプレーナ線路及びその製造方法 |
JP5617835B2 (ja) * | 2009-02-24 | 2014-11-05 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US9117797B2 (en) * | 2011-11-14 | 2015-08-25 | Fuji Electric Co., Ltd. | High-voltage semiconductor device |
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2013
- 2013-09-24 JP JP2013196451A patent/JP5880508B2/ja active Active
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2014
- 2014-09-24 US US14/494,974 patent/US9666542B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168288A (ja) * | 1999-12-13 | 2001-06-22 | Seiko Epson Corp | 半導体装置 |
JP2005509286A (ja) * | 2001-11-09 | 2005-04-07 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 高周波測定用集積半導体素子およびその使用 |
JP2007507093A (ja) * | 2003-09-26 | 2007-03-22 | ユニべルシテ・カトリック・ドゥ・ルベン | 抵抗損を低減させた積層型半導体構造の製造方法 |
Also Published As
Publication number | Publication date |
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JP5880508B2 (ja) | 2016-03-09 |
US20150083470A1 (en) | 2015-03-26 |
US9666542B2 (en) | 2017-05-30 |
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