JP2015018885A - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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Publication number
JP2015018885A
JP2015018885A JP2013144118A JP2013144118A JP2015018885A JP 2015018885 A JP2015018885 A JP 2015018885A JP 2013144118 A JP2013144118 A JP 2013144118A JP 2013144118 A JP2013144118 A JP 2013144118A JP 2015018885 A JP2015018885 A JP 2015018885A
Authority
JP
Japan
Prior art keywords
film
gas
etching
magnetic film
plasma etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013144118A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015018885A5 (https=
Inventor
藤田　大介
Daisuke Fujita
大介 藤田
淳 須山
Atsushi Suyama
淳 須山
直広 山本
Naohiro Yamamoto
直広 山本
正人 石丸
Masato Ishimaru
正人 石丸
山田　健太郎
Kentaro Yamada
健太郎 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2013144118A priority Critical patent/JP2015018885A/ja
Priority to TW103100650A priority patent/TW201503257A/zh
Priority to KR1020140013015A priority patent/KR101578077B1/ko
Priority to US14/181,537 priority patent/US9269892B2/en
Publication of JP2015018885A publication Critical patent/JP2015018885A/ja
Priority to US14/995,897 priority patent/US9680090B2/en
Publication of JP2015018885A5 publication Critical patent/JP2015018885A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Drying Of Semiconductors (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
JP2013144118A 2013-07-10 2013-07-10 プラズマエッチング方法 Pending JP2015018885A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013144118A JP2015018885A (ja) 2013-07-10 2013-07-10 プラズマエッチング方法
TW103100650A TW201503257A (zh) 2013-07-10 2014-01-08 電漿蝕刻方法
KR1020140013015A KR101578077B1 (ko) 2013-07-10 2014-02-05 플라즈마 에칭 방법
US14/181,537 US9269892B2 (en) 2013-07-10 2014-02-14 Plasma etching method
US14/995,897 US9680090B2 (en) 2013-07-10 2016-01-14 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013144118A JP2015018885A (ja) 2013-07-10 2013-07-10 プラズマエッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017158982A Division JP6368837B2 (ja) 2017-08-22 2017-08-22 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
JP2015018885A true JP2015018885A (ja) 2015-01-29
JP2015018885A5 JP2015018885A5 (https=) 2016-04-28

Family

ID=52277394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013144118A Pending JP2015018885A (ja) 2013-07-10 2013-07-10 プラズマエッチング方法

Country Status (4)

Country Link
US (2) US9269892B2 (https=)
JP (1) JP2015018885A (https=)
KR (1) KR101578077B1 (https=)
TW (1) TW201503257A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016164955A (ja) * 2015-03-06 2016-09-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2018131215A1 (ja) * 2017-09-21 2018-07-19 株式会社日立ハイテクノロジーズ 磁気トンネル接合素子の製造方法および誘導結合型プラズマ処理装置

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* Cited by examiner, † Cited by third party
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JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20160072055A1 (en) * 2014-09-08 2016-03-10 Satoshi Seto Manufacturing method of semiconductor memory device
KR102409755B1 (ko) 2015-09-30 2022-06-16 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
KR102615694B1 (ko) 2016-11-02 2023-12-21 삼성전자주식회사 정보 저장 소자 및 그 제조방법
US10522749B2 (en) * 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10497567B2 (en) * 2017-08-07 2019-12-03 Applied Materials, Inc. Method of enhanced selectivity of hard mask using plasma treatments
KR102546091B1 (ko) * 2017-10-27 2023-06-22 도쿄엘렉트론가부시키가이샤 에칭 방법
CN109994476B (zh) * 2017-12-29 2021-03-16 上海磁宇信息科技有限公司 一种制备磁性随机存储器阵列单元的方法
US12374532B2 (en) * 2022-04-11 2025-07-29 Hitachi High-Tech Corporation Plasma processing method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278456A (ja) * 2005-03-28 2006-10-12 Ulvac Japan Ltd トンネル接合素子のエッチング加工方法
JP2008065944A (ja) * 2006-09-08 2008-03-21 Ulvac Japan Ltd 磁性層パターンの形成方法、磁気抵抗素子の製造方法、及び磁気記憶媒体の製造方法
US20120276657A1 (en) * 2011-04-27 2012-11-01 Olivier Joubert Method of patterning of magnetic tunnel junctions
WO2012176747A1 (ja) * 2011-06-24 2012-12-27 キヤノンアネルバ株式会社 機能素子の製造方法
JP2013051227A (ja) * 2011-08-30 2013-03-14 Hitachi High-Technologies Corp プラズマエッチング方法
US20130149499A1 (en) * 2011-12-07 2013-06-13 Hak-sun Lee Magnetic devices and methods of manufacturing the same

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US6893893B2 (en) * 2002-03-19 2005-05-17 Applied Materials Inc Method of preventing short circuits in magnetic film stacks
US6911346B2 (en) * 2002-04-03 2005-06-28 Applied Materials, Inc. Method of etching a magnetic material
US7115517B2 (en) * 2003-04-07 2006-10-03 Applied Materials, Inc. Method of fabricating a dual damascene interconnect structure
JP2004356179A (ja) 2003-05-27 2004-12-16 Sony Corp ドライエッチング方法及びその装置
JP2005079258A (ja) * 2003-08-29 2005-03-24 Canon Inc 磁性体のエッチング加工方法、磁気抵抗効果膜、および磁気ランダムアクセスメモリ
KR100814901B1 (ko) * 2007-05-22 2008-03-19 한국전자통신연구원 건식 식각 공정을 이용한 산화물 박막 트랜지스터 소자의제조방법
US7948044B2 (en) * 2008-04-09 2011-05-24 Magic Technologies, Inc. Low switching current MTJ element for ultra-high STT-RAM and a method for making the same
KR20120058113A (ko) 2010-11-29 2012-06-07 삼성전자주식회사 자기 터널 접합 구조체의 제조 방법 및 이를 이용하는 자기 메모리 소자의 제조 방법
KR101950004B1 (ko) * 2012-03-09 2019-02-19 삼성전자 주식회사 자기 소자
JP5883772B2 (ja) * 2012-11-27 2016-03-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6208017B2 (ja) * 2014-01-07 2017-10-04 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US9390923B2 (en) * 2014-07-03 2016-07-12 Applied Materials, Inc. Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278456A (ja) * 2005-03-28 2006-10-12 Ulvac Japan Ltd トンネル接合素子のエッチング加工方法
JP2008065944A (ja) * 2006-09-08 2008-03-21 Ulvac Japan Ltd 磁性層パターンの形成方法、磁気抵抗素子の製造方法、及び磁気記憶媒体の製造方法
US20120276657A1 (en) * 2011-04-27 2012-11-01 Olivier Joubert Method of patterning of magnetic tunnel junctions
WO2012176747A1 (ja) * 2011-06-24 2012-12-27 キヤノンアネルバ株式会社 機能素子の製造方法
JP2013051227A (ja) * 2011-08-30 2013-03-14 Hitachi High-Technologies Corp プラズマエッチング方法
US20130149499A1 (en) * 2011-12-07 2013-06-13 Hak-sun Lee Magnetic devices and methods of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016164955A (ja) * 2015-03-06 2016-09-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2018131215A1 (ja) * 2017-09-21 2018-07-19 株式会社日立ハイテクノロジーズ 磁気トンネル接合素子の製造方法および誘導結合型プラズマ処理装置
JPWO2018131215A1 (ja) * 2017-09-21 2019-01-17 株式会社日立ハイテクノロジーズ 磁気トンネル接合素子の製造方法および誘導結合型プラズマ処理装置
US10833255B2 (en) 2017-09-21 2020-11-10 Hitachi High-Tech Corporation Method for manufacturing magnetic tunnel junction element, and inductively coupled plasma processing apparatus

Also Published As

Publication number Publication date
US20160133834A1 (en) 2016-05-12
US20150017741A1 (en) 2015-01-15
US9680090B2 (en) 2017-06-13
US9269892B2 (en) 2016-02-23
KR20150007199A (ko) 2015-01-20
TW201503257A (zh) 2015-01-16
KR101578077B1 (ko) 2015-12-16
TWI562229B (https=) 2016-12-11

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