TWI562229B - - Google Patents

Info

Publication number
TWI562229B
TWI562229B TW103100650A TW103100650A TWI562229B TW I562229 B TWI562229 B TW I562229B TW 103100650 A TW103100650 A TW 103100650A TW 103100650 A TW103100650 A TW 103100650A TW I562229 B TWI562229 B TW I562229B
Authority
TW
Taiwan
Application number
TW103100650A
Other languages
Chinese (zh)
Other versions
TW201503257A (zh
Inventor
Daisuke Fujita
Makoto Suyama
Naohiro Yamamoto
Masato Ishimaru
Kentarou Yamada
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW201503257A publication Critical patent/TW201503257A/zh
Application granted granted Critical
Publication of TWI562229B publication Critical patent/TWI562229B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Drying Of Semiconductors (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
TW103100650A 2013-07-10 2014-01-08 電漿蝕刻方法 TW201503257A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013144118A JP2015018885A (ja) 2013-07-10 2013-07-10 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
TW201503257A TW201503257A (zh) 2015-01-16
TWI562229B true TWI562229B (https=) 2016-12-11

Family

ID=52277394

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103100650A TW201503257A (zh) 2013-07-10 2014-01-08 電漿蝕刻方法

Country Status (4)

Country Link
US (2) US9269892B2 (https=)
JP (1) JP2015018885A (https=)
KR (1) KR101578077B1 (https=)
TW (1) TW201503257A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20160072055A1 (en) * 2014-09-08 2016-03-10 Satoshi Seto Manufacturing method of semiconductor memory device
JP2016164955A (ja) * 2015-03-06 2016-09-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102409755B1 (ko) 2015-09-30 2022-06-16 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
KR102615694B1 (ko) 2016-11-02 2023-12-21 삼성전자주식회사 정보 저장 소자 및 그 제조방법
US10522749B2 (en) * 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10497567B2 (en) * 2017-08-07 2019-12-03 Applied Materials, Inc. Method of enhanced selectivity of hard mask using plasma treatments
JP6637612B2 (ja) * 2017-09-21 2020-01-29 株式会社日立ハイテクノロジーズ 磁気トンネル接合素子の製造方法およびプラズマ処理装置
KR102546091B1 (ko) * 2017-10-27 2023-06-22 도쿄엘렉트론가부시키가이샤 에칭 방법
CN109994476B (zh) * 2017-12-29 2021-03-16 上海磁宇信息科技有限公司 一种制备磁性随机存储器阵列单元的方法
US12374532B2 (en) * 2022-04-11 2025-07-29 Hitachi High-Tech Corporation Plasma processing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201230142A (en) * 2010-11-29 2012-07-16 Samsung Electronics Co Ltd Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same
US20120276657A1 (en) * 2011-04-27 2012-11-01 Olivier Joubert Method of patterning of magnetic tunnel junctions
TW201327676A (zh) * 2011-12-07 2013-07-01 三星電子股份有限公司 磁性元件及其製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893893B2 (en) * 2002-03-19 2005-05-17 Applied Materials Inc Method of preventing short circuits in magnetic film stacks
US6911346B2 (en) * 2002-04-03 2005-06-28 Applied Materials, Inc. Method of etching a magnetic material
US7115517B2 (en) * 2003-04-07 2006-10-03 Applied Materials, Inc. Method of fabricating a dual damascene interconnect structure
JP2004356179A (ja) 2003-05-27 2004-12-16 Sony Corp ドライエッチング方法及びその装置
JP2005079258A (ja) * 2003-08-29 2005-03-24 Canon Inc 磁性体のエッチング加工方法、磁気抵抗効果膜、および磁気ランダムアクセスメモリ
JP2006278456A (ja) * 2005-03-28 2006-10-12 Ulvac Japan Ltd トンネル接合素子のエッチング加工方法
JP2008065944A (ja) * 2006-09-08 2008-03-21 Ulvac Japan Ltd 磁性層パターンの形成方法、磁気抵抗素子の製造方法、及び磁気記憶媒体の製造方法
KR100814901B1 (ko) * 2007-05-22 2008-03-19 한국전자통신연구원 건식 식각 공정을 이용한 산화물 박막 트랜지스터 소자의제조방법
US7948044B2 (en) * 2008-04-09 2011-05-24 Magic Technologies, Inc. Low switching current MTJ element for ultra-high STT-RAM and a method for making the same
WO2012176747A1 (ja) * 2011-06-24 2012-12-27 キヤノンアネルバ株式会社 機能素子の製造方法
JP2013051227A (ja) * 2011-08-30 2013-03-14 Hitachi High-Technologies Corp プラズマエッチング方法
KR101950004B1 (ko) * 2012-03-09 2019-02-19 삼성전자 주식회사 자기 소자
JP5883772B2 (ja) * 2012-11-27 2016-03-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6208017B2 (ja) * 2014-01-07 2017-10-04 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US9390923B2 (en) * 2014-07-03 2016-07-12 Applied Materials, Inc. Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201230142A (en) * 2010-11-29 2012-07-16 Samsung Electronics Co Ltd Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same
US20120276657A1 (en) * 2011-04-27 2012-11-01 Olivier Joubert Method of patterning of magnetic tunnel junctions
TW201327676A (zh) * 2011-12-07 2013-07-01 三星電子股份有限公司 磁性元件及其製造方法

Also Published As

Publication number Publication date
US20160133834A1 (en) 2016-05-12
US20150017741A1 (en) 2015-01-15
US9680090B2 (en) 2017-06-13
US9269892B2 (en) 2016-02-23
KR20150007199A (ko) 2015-01-20
TW201503257A (zh) 2015-01-16
JP2015018885A (ja) 2015-01-29
KR101578077B1 (ko) 2015-12-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees