JP2015012294A - 大きなチャネル周縁部を備えた金属酸化膜半導体(mos)デバイス及びその製造方法 - Google Patents
大きなチャネル周縁部を備えた金属酸化膜半導体(mos)デバイス及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000002019 doping agent Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 25
- 238000013461 design Methods 0.000 claims description 13
- 230000001413 cellular effect Effects 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000003252 repetitive effect Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 22
- 230000000903 blocking effect Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 241000264877 Hippospongia communis Species 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/41725—Source or drain electrodes for field effect devices
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Abstract
【解決手段】半導体デバイスは、基板上14に配置されたドリフト層16を含む。ドリフト層16は、半導体デバイスのチャネルの長さに平行に向けられた複数の繰り返し特徴要素を備えた非平面のプロファイル52を有する。更に、各繰り返し特徴要素は、ドリフト層16の残りの部分よりも高いドーパント濃度を有する。本構成により、素子抵抗が低減される。
【選択図】図10
Description
N<2Qc/(距離155)
従って、特定の実施形態において、特定のMOSFETデバイス寸法(例えば、距離150、154、156、158、160、及び角度152)を利用して、作製中にドーピング(例えば、ドリフト層16及びドープ領域172において)を行うことにより、より深いトレンチ特徴部56を達成することができ、デバイスの阻止容量を犠牲にすることなく低いデバイス抵抗(低チャネル抵抗)を可能にすることができる点は理解することができる。
30 抵抗Rs(n+領域20の抵抗及びソースコンタクト22の抵抗)
32 抵抗Rch(ウェル領域18の反転チャネル抵抗)
34 抵抗Racc(ゲート酸化物24とウェル領域18間に位置するドリフト層16の一部との間の蓄積層の抵抗)
36 抵抗RJFET(ウェル領域18間のネック領域の抵抗)
38 抗Rdrift(ドリフト層16の周りの抵抗)
40 抵抗Rsub(基板層14の周りの抵抗)
Claims (21)
- 基板上に配置されたドリフト層を備えた半導体デバイスであって、前記ドリフト層が、前記半導体デバイスのチャネルの長さに平行に向けられた複数の繰り返し特徴要素を含む非平面の面を有し、前記繰り返し特徴要素の各々が、前記ドリフト層の残りの部分よりも高いドーパント濃度を有する、半導体デバイス。
- 前記ドリフト層の非平面の面の一部に沿って共形に配置された非平面ウェル領域を更に備える、請求項1に記載の半導体デバイス。
- 前記複数の繰り返し特徴要素の各々の高さが、前記ドリフト層の厚みの約10%以下である、請求項2に記載の半導体デバイス。
- 前記非平面ウェル領域の少なくとも一部にわたって共形に配置された非平面ソースコンタクトを更に備える、請求項2に記載の半導体デバイス。
- 前記ドリフト層の非平面の面の第2の部分に沿って共形に配置された第2の非平面ウェル領域を更に備え、前記第2の非平面ウェル領域の少なくとも一部にわたって共形に配置された非平面ドレインコンタクトを備える、請求項2に記載の半導体デバイス。
- 前記ドリフト層の少なくとも一部と前記ウェル領域の一部にわたって共形に配置された非平面誘電層と、前記非平面誘電層の少なくとも一部にわたって共形に配置された非平面ゲートとを更に備える、請求項2に記載の半導体デバイス。
- 前記ドリフト層が、炭化ケイ素(SiC)ドリフト層を含む、請求項1に記載の半導体デバイス。
- 前記繰り返し特徴要素が、繰り返し矩形ピーク特徴要素を含む、請求項1に記載の半導体デバイス。
- 前記繰り返し矩形ピーク特徴要素が、2a/bにほぼ等しいチャネルの幅の増大をもたらし、ここでaは前記矩形ピーク特徴要素の一辺の長さであり、bは前記矩形ピーク特徴要素の底辺の長さ又はピッチである、請求項8に記載の半導体デバイス。
- 前記繰り返し特徴要素が、繰り返し矩形又は台形のピーク特徴部を含む、請求項1に記載の半導体デバイス。
- 前記繰り返し矩形ピーク特徴要素が、2(a+b)/bにほぼ等しいチャネルの幅の増大をもたらし、ここでaは前記繰り返し矩形ピーク特徴要素の高さであり、bは前記繰り返し矩形ピーク特徴要素のピッチである、請求項10に記載の半導体デバイス。
- 前記繰り返し特徴要素のドーパント濃度は、前記ドリフト層の臨界電荷の2倍を前記繰り返し特徴要素の幅で除算したものよりも小さいか又はほぼ等しい、請求項1に記載の半導体デバイス。
- 前記半導体デバイスが、矩形、方形、又はハニカムのセル状設計を有するセル状半導体デバイスである、請求項1に記載の半導体デバイス。
- 半導体デバイスを製造する方法であって、
残りの部分よりも高いドープを有する複数の繰り返しの三角形、矩形、又は円形特徴要素を含む非平面の面を有するエピタキシャル半導体層を形成するステップと、
前記エピタキシャル半導体層の非平面の面の少なくとも一部から非平面ウェル領域を形成するステップと、
前記非平面ウェル領域の少なくとも一部から非平面n+又はp+領域を形成するステップと、
を含む、方法。 - 前記エピタキシャル半導体層の少なくとも一部にわたって共形に非平面誘電層を堆積するステップと、
前記非平面誘電層の少なくとも一部にわたって共形に非平面ゲートを堆積するステップと、
を更に含む、請求項15に記載の方法。 - 前記非平面の面を有するエピタキシャル半導体層を形成するステップが、傾斜レジストマスク法、グレースケールリソグラフィー技術、又はこれらの組み合わせを用いることを含む、請求項14に記載の方法。
- 前記エピタキシャル半導体層を形成するステップが、前記エピタキシャル半導体層の臨界電荷の2倍を繰り返しの三角形、矩形、又は円形の特徴要素の幅で除算した値よりも小さいか又はほぼ等しいドーパント濃度を有する前記特徴要素を形成するステップを含む、請求項14に記載の方法。
- 前記エピタキシャル半導体層を形成するステップ、前記非平面ウェル領域を形成するステップ、及び前記非平面n+又はp+領域を形成するステップが各々、イオン注入を用いて前記エピタキシャル半導体層のそれぞれの部分のドーパント濃度を変えるステップを含む、請求項14に記載の方法。
- 半導体デバイスであって、
ある厚みを有するドリフト層を備え、前記ドリフト層が、該ドリフト層内にある深さまで延びた複数のトレンチ特徴部を有する非平面の面を備え、前記深さは、前記ドリフト層の厚みの約10%以下であり、
前記半導体デバイスが更に、
前記ドリフト層の非平面の面の少なくとも一部に共形に配置された非平面のp型ウェルと、
前記非平面のp型ウェルの少なくとも一部に共形に配置された非平面のn+領域と、
前記ドリフト層の少なくとも一部、前記p型ウェル領域の一部、及び前記n+領域の一部にわたって共形に配置された非平面の誘電層と、
前記非平面の誘電層の少なくとも一部にわたって共形に配置された非平面ゲートと、
を備える、半導体デバイス。 - 前記複数のトレンチ特徴部の各々の間に配置された前記ドリフト層の一部が、前記ドリフト層の残りの部分のドーパント濃度よりも高く、且つ記ドリフト層の臨界電荷の2倍を前記複数のトレンチ特徴部の幅で除算したものよりも小さいか又はほぼ等しいドーパント濃度を有する、請求項19に記載の半導体デバイス。
- 前記ドリフト層が、ケイ素(Si)、炭化ケイ素(SiC)、窒化アルミニウム(AIN)、窒化ガリウム(GaN)、ガリウムヒ素(GaAs)、ダイアモンド(C)、又はゲルマニウム(Ge)ドリフト層を含む、請求項19に記載の半導体デバイス。
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JP2020038944A (ja) * | 2018-09-05 | 2020-03-12 | 株式会社日立製作所 | 半導体装置およびその製造方法、電力変換装置、3相モータシステム、自動車並びに鉄道車両 |
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US9716144B2 (en) | 2014-12-19 | 2017-07-25 | General Electric Company | Semiconductor devices having channel regions with non-uniform edge |
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CN108155240A (zh) * | 2017-12-22 | 2018-06-12 | 电子科技大学 | 一种SiC VDMOS器件 |
CN116682859B (zh) * | 2023-08-03 | 2023-10-27 | 南京第三代半导体技术创新中心有限公司 | 多沟道碳化硅mosfet器件及其制造方法 |
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JP2020155486A (ja) * | 2019-03-18 | 2020-09-24 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
JP6992021B2 (ja) | 2019-03-18 | 2022-01-13 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
Also Published As
Publication number | Publication date |
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FR3008232A1 (fr) | 2015-01-09 |
US20150008448A1 (en) | 2015-01-08 |
GB201411795D0 (en) | 2014-08-13 |
GB2518267B (en) | 2016-08-31 |
GB2518267A (en) | 2015-03-18 |
FR3008232B1 (fr) | 2022-08-05 |
CA2855324A1 (en) | 2015-01-02 |
US9748341B2 (en) | 2017-08-29 |
CN104282758A (zh) | 2015-01-14 |
BR102014016376A2 (pt) | 2015-11-17 |
CN104282758B (zh) | 2018-06-26 |
CA2855324C (en) | 2017-08-08 |
JP6693691B2 (ja) | 2020-05-13 |
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