JP2014531512A - 基板の特定の場所に蒸着するための転写マスク及び当該転写マスクを製造するための方法 - Google Patents
基板の特定の場所に蒸着するための転写マスク及び当該転写マスクを製造するための方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
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Abstract
Description
2 中間キャリア
3 部分層
4 反射層
6 吸熱層
7 吸熱増大層
8 中間層
10 カバー層
11 付着抑制層
12 蒸発層
13 多層スタック
14 後面
15 前面
16 反射防止膜
20 基板
22 光源
24 シャッタ
26 被膜
Claims (16)
- 基板(20)の特定の場所に蒸着するための、透明な中間キャリア(2)を有する転写マスクであって、多層スタック(13)が、この中間キャリア(2)の後面(14)上に配置されていて、この多層スタック(13)は、放射熱を吸収する材料から成る吸熱層(6)を有し、この吸熱層(6)の上に一続きのカバー層(10)を有し、且つこのカバー層(10)の上に蒸発させるべき材料の一続きの蒸発層(12)を有する当該転写マスクにおいて、
前記多層スタック(13)は、反射層(4)を有さず、そのマスクパターンが、パターン化された吸熱層(6)によって、又は前記中間キャリア(2)中に埋設されているパターン化された反射層(4)によって形成されていることを特徴とする転写マスク。 - 前記吸熱層(6)は、その融点温度が前記蒸発層(12)の材料の沸点より少なくとも20%、好ましくは少なくとも25%より上にある材料から成ることを特徴とする請求項1に記載の転写マスク。
- 前記蒸発層は、耐熱金属又は耐熱金属の合金から成り、この蒸発層(12)の材料の反射率が、前記吸熱層(6)の材料の反射率より高いことを特徴とする請求項2に記載の転写マスク。
- 前記中間キャリア(2)の1つの部分層(3)に続く部分層の材料のそのほとんどの成分において一致する材料から成る前記中間キャリア(2)の前記1つの部分層(3)が、当該埋設された反射層(4)の上に存在することを特徴とする請求項1に記載の転写マスク。
- 前記中間キャリア(2)は、石英ガラスから成ることを特徴とする請求項1〜4のいずれか1項に記載の転写マスク。
- 前記吸熱層(6)は、金属又は合金から成り、吸熱増大層(7)が、前記中間キャリア(2)と前記吸熱層(6)との間に配置されていて、且つ前記吸熱層(6)に接触して配置されていることを特徴とする請求項1〜5のいずれか1項に記載の転写マスク。
- 前記吸熱増大層(7)は、単層又は複層に形成されていて、且つ誘電材料から成り、好ましくは耐熱金属の酸化物、窒化物、酸窒化物、炭化物若しくは珪化物又は二酸化ケイ素から成ることを特徴とする請求項6に記載の転写マスク。
- 前記吸熱層(6)の反射率が、前記埋設された反射層(4)の反射率より少なくとも20%小さいことを特徴とする請求項1〜7のいずれか1項に記載の転写マスク。
- 一続きで、透明な中間層(8)が、前記吸熱層(6)と前記中間キャリア(2)との間に配置されていることを特徴とする請求項1〜8のいずれか1項に記載の転写マスク。
- 付着抑制層(11)が、カバー層(10)と蒸発層(12)との間の付着を阻止するために前記カバー層(10)と前記蒸発層(12)との間に配置されていることを特徴とする請求項1〜9のいずれか1項に記載の転写マスク。
- 前記中間キャリア(2)は、その前面(15)上に反射防止膜(16)を有することを特徴とする請求項1〜10のいずれか1項に記載の転写マスク。
- 吸熱層(6)、中間層(8)及び/又はカバー層(10)のうちの少なくとも1つの層が、熱伝導率に異方性を有することを特徴とする請求項1〜11のいずれか1項に記載の転写マスク。
- 請求項1〜11のいずれか1項に記載の、中間キャリア(2)の後面上に多層スタックを有する透明な中間キャリア(2)が製造されることによって、基板(20)の特定の場所に蒸着するための転写マスク(1)を製造する方法。
- 前記多層スタック(13)を前記中間キャリア(2)上に被膜形成する前に、前記反射層(4)を前記中間キャリア(2)中に埋設するため、反射層(4)が、被膜形成されてパターン化され、次いで前記中間キャリア(2)の透明な部分層(3)が、この反射層(4)を覆うように、この反射層(4)の上に被膜形成されることを特徴とする請求項13に記載の転写マスク(1)を製造する方法。
- 前記部分層(3)を製作するため、ガラスの原料が、スピンコートによって被膜形成され、その後に硬化されることを特徴とする請求項14に記載の転写マスク(1)を製造する方法。
- 吸収層(6)、中間層(8)及び/又はカバー層(10)のうちの少なくとも1つの層の製作中に、該当する層が、熱伝導率に異方性を有して製造されるように、パラメータである中間キャリアの温度、蒸着速度、ガス流つまりガス流の挙動及びガス圧が調整されることを特徴とする請求項13〜15のいずれか1項に記載の転写マスク(1)を製造する方法。
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PCT/EP2012/066798 WO2013041336A1 (de) | 2011-09-19 | 2012-08-29 | Transfermasken zur lokalen bedampfung von substraten und verfahren zu deren herstellung |
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DE102012110343A1 (de) | 2012-10-29 | 2014-04-30 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur lokal differenzierbaren Bedampfung von Substraten |
DE102013108315B4 (de) * | 2013-08-01 | 2016-08-04 | Von Ardenne Gmbh | Beschichtungsvorrichtung und Verfahren zum Herstellen einer Beschichtungsvorrichtung |
DE102014109046A1 (de) | 2014-06-27 | 2015-12-31 | Von Ardenne Gmbh | Transferlithographiemaske und Transferlithographieanlage |
KR102181239B1 (ko) | 2014-09-03 | 2020-11-23 | 삼성디스플레이 주식회사 | 박막 형성 장치 및 그를 이용한 박막 형성 방법 |
DE102014113944A1 (de) | 2014-09-26 | 2016-04-14 | Von Ardenne Gmbh | Transfermaske mit hohem Auflösungsvermögen und Verfahren zu deren Herstellung |
DE102016105796B4 (de) | 2016-03-30 | 2024-09-26 | Leander Kilian Gross | Verfahren zur lokal differenzierten Abscheidung eines Materials auf ein Substrat und Verwendung eines solchen Verfahrens |
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JP2006123546A (ja) * | 2004-10-19 | 2006-05-18 | Samsung Sdi Co Ltd | ドナー基板,有機電界発光表示装置の製造方法 |
JP2008066147A (ja) * | 2006-09-07 | 2008-03-21 | Fuji Electric Holdings Co Ltd | 蒸着によるパターン形成方法、該方法を含む色変換フィルタ基板およびカラー有機el素子の製造方法 |
JP2009212083A (ja) * | 2008-02-04 | 2009-09-17 | Semiconductor Energy Lab Co Ltd | 成膜方法および発光装置の作製方法 |
JP2011023731A (ja) * | 2009-09-15 | 2011-02-03 | Von Ardenne Anlagentechnik Gmbh | 微細構造を製造するための方法及び装置 |
JP2012109638A (ja) * | 2008-06-16 | 2012-06-07 | Toray Ind Inc | デバイス |
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JP2006123546A (ja) * | 2004-10-19 | 2006-05-18 | Samsung Sdi Co Ltd | ドナー基板,有機電界発光表示装置の製造方法 |
JP2008066147A (ja) * | 2006-09-07 | 2008-03-21 | Fuji Electric Holdings Co Ltd | 蒸着によるパターン形成方法、該方法を含む色変換フィルタ基板およびカラー有機el素子の製造方法 |
JP2009212083A (ja) * | 2008-02-04 | 2009-09-17 | Semiconductor Energy Lab Co Ltd | 成膜方法および発光装置の作製方法 |
JP2012109638A (ja) * | 2008-06-16 | 2012-06-07 | Toray Ind Inc | デバイス |
JP2011023731A (ja) * | 2009-09-15 | 2011-02-03 | Von Ardenne Anlagentechnik Gmbh | 微細構造を製造するための方法及び装置 |
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DE102011082956B4 (de) | 2015-10-15 |
KR101485842B1 (ko) | 2015-01-26 |
JP5685350B2 (ja) | 2015-03-18 |
CN103958724A (zh) | 2014-07-30 |
WO2013041336A9 (de) | 2013-05-30 |
DE102011082956A1 (de) | 2013-03-21 |
KR20140066769A (ko) | 2014-06-02 |
WO2013041336A1 (de) | 2013-03-28 |
CN103958724B (zh) | 2016-05-11 |
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