JP2014525989A5 - - Google Patents
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- Publication number
- JP2014525989A5 JP2014525989A5 JP2014520732A JP2014520732A JP2014525989A5 JP 2014525989 A5 JP2014525989 A5 JP 2014525989A5 JP 2014520732 A JP2014520732 A JP 2014520732A JP 2014520732 A JP2014520732 A JP 2014520732A JP 2014525989 A5 JP2014525989 A5 JP 2014525989A5
- Authority
- JP
- Japan
- Prior art keywords
- deposition method
- vapor
- vapor deposition
- phosphate compound
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims description 35
- 238000007740 vapor deposition Methods 0.000 claims description 31
- 229910019142 PO4 Inorganic materials 0.000 claims description 20
- 239000010452 phosphate Substances 0.000 claims description 20
- -1 phosphate compound Chemical class 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 239000011593 sulfur Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical group [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 238000005336 cracking Methods 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910001416 lithium ion Inorganic materials 0.000 claims description 2
- 229910001386 lithium phosphate Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910001463 metal phosphate Inorganic materials 0.000 claims description 2
- 229910001465 mixed metal phosphate Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 4
- 229910008092 Li-Mn-P Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1112604.2 | 2011-07-21 | ||
| GB1112604.2A GB2493022B (en) | 2011-07-21 | 2011-07-21 | Vapour deposition process for the preparation of a phosphate compound |
| PCT/GB2012/051740 WO2013011326A1 (en) | 2011-07-21 | 2012-07-20 | Vapour deposition process for the preparation of a phosphate compound |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014525989A JP2014525989A (ja) | 2014-10-02 |
| JP2014525989A5 true JP2014525989A5 (enExample) | 2015-07-02 |
| JP6117200B2 JP6117200B2 (ja) | 2017-04-19 |
Family
ID=44652144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014520732A Active JP6117200B2 (ja) | 2011-07-21 | 2012-07-20 | リン酸塩化合物の調製のための蒸着方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9533886B2 (enExample) |
| EP (1) | EP2734656B1 (enExample) |
| JP (1) | JP6117200B2 (enExample) |
| CN (1) | CN103703161B (enExample) |
| GB (1) | GB2493022B (enExample) |
| WO (1) | WO2013011326A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015072359A1 (ja) * | 2013-11-15 | 2015-05-21 | 住友金属鉱山株式会社 | 表面処理された酸化物粒子の製造方法とその製造方法で得られる酸化物粒子 |
| GB201400277D0 (en) * | 2014-01-08 | 2014-02-26 | Ilika Technologies Ltd | Vapour deposition method for preparing crystalline lithium-containing compounds |
| GB201400274D0 (en) * | 2014-01-08 | 2014-02-26 | Ilika Technologies Ltd | Vapour deposition method for preparing amorphous lithium-containing compounds |
| GB201400276D0 (en) * | 2014-01-08 | 2014-02-26 | Ilika Technologies Ltd | Vapour deposition method for fabricating lithium-containing thin film layered structures |
| JP6455529B2 (ja) | 2015-02-02 | 2019-01-23 | 富士通株式会社 | 固体電解質、及び全固体電池 |
| KR102435872B1 (ko) * | 2016-06-15 | 2022-08-23 | 이리카 테크놀로지스 리미티드 | 전해질 및 전극 보호층으로서의 리튬 보로실리케이트 유리 |
| US20180127875A1 (en) * | 2016-11-04 | 2018-05-10 | National Chung Shan Institute Of Science And Technology | Apparatus for performing selenization and sulfurization process on glass substrate |
| CN106757352B (zh) * | 2016-12-26 | 2019-03-01 | 江南大学 | 一种六磷酸根合锗酸镉蓝色荧光晶体材料的制备方法及用途 |
| KR101895290B1 (ko) * | 2017-01-23 | 2018-09-05 | 영남대학교 산학협력단 | 금속-유기 화학 기상 증착에 의한 삼차원 고체 배터리용 리튬 포스페이트 박막 전해질의 균일한 증착 방법 및 장치 |
| WO2018168963A1 (ja) * | 2017-03-15 | 2018-09-20 | キヤノンオプトロン株式会社 | 親水性蒸着膜及び蒸着材料 |
| DE102017205339A1 (de) * | 2017-03-29 | 2018-10-04 | Forschungszentrum Jülich GmbH | Chemisch beständiger, oxidischer Elektrokatalysator für die Sauerstoffentwicklung während der alkalischen Wasserelektrolyse basierend auf BaCoO3-delta, Verfahren zu seiner Herstellung und ihn umfassende Anode sowie katalytisch aktives und chemisch stabiles Reaktionsprodukt davon |
| GB201814039D0 (en) | 2018-08-29 | 2018-10-10 | Ilika Tech Ltd | Method |
| GB2589626A (en) | 2019-12-05 | 2021-06-09 | Ilika Tech Ltd | Method |
| GB202204894D0 (en) * | 2022-04-04 | 2022-05-18 | Ucl Business Ltd | Solid electrolyte film |
| CN115998158B (zh) * | 2022-12-29 | 2025-04-29 | 武汉苏泊尔炊具有限公司 | 一种不粘炊具及其制造方法 |
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| US2792285A (en) * | 1953-07-17 | 1957-05-14 | Monsanto Chemicals | Production of alkali metal phosphates |
| US4596721A (en) * | 1981-12-30 | 1986-06-24 | Stauffer Chemical Company | Vacuum evaporating films of alkali metal polyphosphide |
| US4649024A (en) | 1983-06-29 | 1987-03-10 | Stauffer Chemical Company | Method for forming evaporated pnictide and alkali metal polypnictide films |
| US4878989A (en) | 1986-11-26 | 1989-11-07 | Texas Instruments Incorporated | Chemical beam epitaxy system |
| US6541695B1 (en) * | 1992-09-21 | 2003-04-01 | Thomas Mowles | High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production |
| US5730852A (en) | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
| US6982132B1 (en) * | 1997-10-15 | 2006-01-03 | Trustees Of Tufts College | Rechargeable thin film battery and method for making the same |
| CA2311061C (en) | 1999-06-11 | 2009-10-06 | National Research Council Of Canada | Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan |
| EP1305838B8 (en) * | 2000-03-24 | 2007-10-03 | Cymbet Corporation | Low-temperature fabrication of thin-film energy-storage devices |
| US6911129B1 (en) | 2000-05-08 | 2005-06-28 | Intematix Corporation | Combinatorial synthesis of material chips |
| JP3650328B2 (ja) | 2000-12-01 | 2005-05-18 | Ｔｄｋ株式会社 | Ｈ２ｓクラッキングセル、それを用いた硫化物の製造方法、無機ｅｌ素子の製造方法および無機ｅｌ素子 |
| CN1293664C (zh) * | 2001-09-03 | 2007-01-03 | 松下电器产业株式会社 | 电化学元件的制造方法 |
| US6911280B1 (en) * | 2001-12-21 | 2005-06-28 | Polyplus Battery Company | Chemical protection of a lithium surface |
| US6863999B1 (en) * | 2002-01-23 | 2005-03-08 | Innovative Technology Licensing, Llc | Monazite-based thermal barrier coatings |
| JP2003277915A (ja) | 2002-03-26 | 2003-10-02 | Matsushita Electric Ind Co Ltd | 薄膜の製造方法及び製造装置 |
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| CN1191654C (zh) * | 2003-03-06 | 2005-03-02 | 复旦大学 | 一种能够大面积制备锂离子固体电解质薄膜的方法 |
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| RU2435874C2 (ru) | 2006-04-14 | 2011-12-10 | СИЛИКА ТЕК, ЭлЭлСи | Установка плазменного осаждения и способ изготовления солнечных элементов |
| KR101234233B1 (ko) | 2006-05-18 | 2013-02-18 | 삼성에스디아이 주식회사 | 포스페이트를 포함하는 반도체 전극 및 이를 채용한태양전지 |
| JP5246839B2 (ja) | 2006-08-24 | 2013-07-24 | 独立行政法人産業技術総合研究所 | 半導体薄膜の製造方法、半導体薄膜の製造装置、光電変換素子の製造方法及び光電変換素子 |
| JP2008120632A (ja) | 2006-11-13 | 2008-05-29 | Sharp Corp | 分子線源，分子線結晶成長装置，分子線結晶成長方法 |
| JP4963679B2 (ja) | 2007-05-29 | 2012-06-27 | キヤノン株式会社 | 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド |
| JP4941754B2 (ja) * | 2007-09-05 | 2012-05-30 | ソニー株式会社 | 蒸着装置 |
| CA2703288A1 (en) * | 2007-11-20 | 2009-05-28 | Mosaic Crystals Ltd. | Amorphous group iii-v semiconductor material and preparation thereof |
| US9564629B2 (en) * | 2008-01-02 | 2017-02-07 | Nanotek Instruments, Inc. | Hybrid nano-filament anode compositions for lithium ion batteries |
| US20090325340A1 (en) | 2008-06-30 | 2009-12-31 | Mohd Aslami | Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels |
| US20100037824A1 (en) | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Plasma Reactor Having Injector |
| US20110272786A1 (en) | 2008-10-09 | 2011-11-10 | Nxp B.V. | Energy storage system |
| KR101245371B1 (ko) | 2009-06-19 | 2013-03-19 | 한국전자통신연구원 | 태양전지 및 그 제조방법 |
| JP4523666B1 (ja) * | 2009-07-31 | 2010-08-11 | 富士フイルム株式会社 | 有機電界発光素子成膜用組成物及び蒸着膜の製造方法 |
| GB2493020B (en) * | 2011-07-21 | 2014-04-23 | Ilika Technologies Ltd | Vapour deposition process for the preparation of a chemical compound |
-
2011
- 2011-07-21 GB GB1112604.2A patent/GB2493022B/en active Active
-
2012
- 2012-07-20 EP EP12740395.4A patent/EP2734656B1/en active Active
- 2012-07-20 CN CN201280036100.9A patent/CN103703161B/zh active Active
- 2012-07-20 WO PCT/GB2012/051740 patent/WO2013011326A1/en not_active Ceased
- 2012-07-20 US US14/117,823 patent/US9533886B2/en active Active
- 2012-07-20 JP JP2014520732A patent/JP6117200B2/ja active Active
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