JP2015509133A5 - - Google Patents
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- Publication number
- JP2015509133A5 JP2015509133A5 JP2014520733A JP2014520733A JP2015509133A5 JP 2015509133 A5 JP2015509133 A5 JP 2015509133A5 JP 2014520733 A JP2014520733 A JP 2014520733A JP 2014520733 A JP2014520733 A JP 2014520733A JP 2015509133 A5 JP2015509133 A5 JP 2015509133A5
- Authority
- JP
- Japan
- Prior art keywords
- deposition method
- vapor deposition
- vapor
- cracked
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims description 33
- 238000007740 vapor deposition Methods 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 238000005336 cracking Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical group [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910001416 lithium ion Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910001463 metal phosphate Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910001465 mixed metal phosphate Inorganic materials 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910008092 Li-Mn-P Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1112600.0A GB2493020B (en) | 2011-07-21 | 2011-07-21 | Vapour deposition process for the preparation of a chemical compound |
| GB1112600.0 | 2011-07-21 | ||
| PCT/GB2012/051741 WO2013011327A2 (en) | 2011-07-21 | 2012-07-20 | Vapour deposition process for the preparation of a chemical compound |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015509133A JP2015509133A (ja) | 2015-03-26 |
| JP2015509133A5 true JP2015509133A5 (enExample) | 2015-07-02 |
| JP6151690B2 JP6151690B2 (ja) | 2017-06-21 |
Family
ID=44652141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014520733A Active JP6151690B2 (ja) | 2011-07-21 | 2012-07-20 | 化合物の調製のための蒸着方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9067790B2 (enExample) |
| EP (1) | EP2734657A2 (enExample) |
| JP (1) | JP6151690B2 (enExample) |
| CN (1) | CN104093876B (enExample) |
| GB (1) | GB2493020B (enExample) |
| WO (1) | WO2013011327A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2493022B (en) * | 2011-07-21 | 2014-04-23 | Ilika Technologies Ltd | Vapour deposition process for the preparation of a phosphate compound |
| US9627680B2 (en) * | 2013-11-15 | 2017-04-18 | Sumitomo Metal Mining Co., Ltd. | Method for producing surface-treated oxide particles, and oxide particles produced by said production method |
| GB201400274D0 (en) | 2014-01-08 | 2014-02-26 | Ilika Technologies Ltd | Vapour deposition method for preparing amorphous lithium-containing compounds |
| GB201400276D0 (en) | 2014-01-08 | 2014-02-26 | Ilika Technologies Ltd | Vapour deposition method for fabricating lithium-containing thin film layered structures |
| GB201400277D0 (en) * | 2014-01-08 | 2014-02-26 | Ilika Technologies Ltd | Vapour deposition method for preparing crystalline lithium-containing compounds |
| FR3020503B1 (fr) * | 2014-04-24 | 2016-05-06 | Commissariat Energie Atomique | Electrolyte solide pour micro batterie |
| WO2016125230A1 (ja) * | 2015-02-02 | 2016-08-11 | 富士通株式会社 | 固体電解質、及び全固体電池 |
| US10177406B2 (en) | 2015-07-21 | 2019-01-08 | Samsung Electronics Co., Ltd. | Solid electrolyte and/or electroactive material |
| TWI618282B (zh) * | 2015-08-28 | 2018-03-11 | 行政院原子能委員會核能研究所 | 多晶粒電極製造方法 |
| CN105870434B (zh) * | 2016-06-06 | 2019-12-20 | 南昌大学 | 一种硅粉掺杂的方法 |
| WO2017216532A1 (en) | 2016-06-15 | 2017-12-21 | Ilika Technologies Limited | Lithium borosilicate glass as electrolyte and electrode protective layer |
| US20180127875A1 (en) * | 2016-11-04 | 2018-05-10 | National Chung Shan Institute Of Science And Technology | Apparatus for performing selenization and sulfurization process on glass substrate |
| WO2018168963A1 (ja) * | 2017-03-15 | 2018-09-20 | キヤノンオプトロン株式会社 | 親水性蒸着膜及び蒸着材料 |
| GB2575786B (en) | 2018-07-20 | 2021-11-03 | Dyson Technology Ltd | Stack for an energy storage device |
| GB201814039D0 (en) | 2018-08-29 | 2018-10-10 | Ilika Tech Ltd | Method |
| CN109160501A (zh) * | 2018-11-06 | 2019-01-08 | 中山大学 | 用微波等离子体化学气相沉积制备过渡金属磷化物的方法 |
| GB2589626A (en) | 2019-12-05 | 2021-06-09 | Ilika Tech Ltd | Method |
| CN114774886B (zh) * | 2022-06-21 | 2022-09-13 | 柔电（武汉）科技有限公司 | 一种耐氧化抗盐雾吸波材料粉体及制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE895514A (nl) * | 1981-12-30 | 1983-06-30 | Stauffer Chemical Co | Kettingvormige fosformaterialen, de bereiding en toepassing daarvan alsmede halfgeleiders en andere inrichtingen waarin zij worden toegepast |
| US4649024A (en) * | 1983-06-29 | 1987-03-10 | Stauffer Chemical Company | Method for forming evaporated pnictide and alkali metal polypnictide films |
| US4878989A (en) * | 1986-11-26 | 1989-11-07 | Texas Instruments Incorporated | Chemical beam epitaxy system |
| US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
| CA2311061C (en) * | 1999-06-11 | 2009-10-06 | National Research Council Of Canada | Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan |
| US6852139B2 (en) | 2003-07-11 | 2005-02-08 | Excellatron Solid State, Llc | System and method of producing thin-film electrolyte |
| GB2406860A (en) | 2003-10-09 | 2005-04-13 | Univ Southampton | Vapour deposition method |
| US20050229856A1 (en) * | 2004-04-20 | 2005-10-20 | Malik Roger J | Means and method for a liquid metal evaporation source with integral level sensor and external reservoir |
| CA2649520A1 (en) * | 2006-04-14 | 2007-10-25 | Silica Tech, Llc | Plasma deposition apparatus and method for making solar cells |
| KR101234233B1 (ko) * | 2006-05-18 | 2013-02-18 | 삼성에스디아이 주식회사 | 포스페이트를 포함하는 반도체 전극 및 이를 채용한태양전지 |
| JP5246839B2 (ja) * | 2006-08-24 | 2013-07-24 | 独立行政法人産業技術総合研究所 | 半導体薄膜の製造方法、半導体薄膜の製造装置、光電変換素子の製造方法及び光電変換素子 |
| JP4963679B2 (ja) * | 2007-05-29 | 2012-06-27 | キヤノン株式会社 | 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド |
| CA2703288A1 (en) * | 2007-11-20 | 2009-05-28 | Mosaic Crystals Ltd. | Amorphous group iii-v semiconductor material and preparation thereof |
| US20090325340A1 (en) * | 2008-06-30 | 2009-12-31 | Mohd Aslami | Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels |
| US20100037824A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Plasma Reactor Having Injector |
| KR101245371B1 (ko) * | 2009-06-19 | 2013-03-19 | 한국전자통신연구원 | 태양전지 및 그 제조방법 |
-
2011
- 2011-07-21 GB GB1112600.0A patent/GB2493020B/en active Active
-
2012
- 2012-07-20 US US14/117,827 patent/US9067790B2/en active Active
- 2012-07-20 CN CN201280036116.XA patent/CN104093876B/zh active Active
- 2012-07-20 JP JP2014520733A patent/JP6151690B2/ja active Active
- 2012-07-20 EP EP12740396.2A patent/EP2734657A2/en not_active Withdrawn
- 2012-07-20 WO PCT/GB2012/051741 patent/WO2013011327A2/en not_active Ceased
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