JP2014524158A5 - - Google Patents
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- Publication number
- JP2014524158A5 JP2014524158A5 JP2014522943A JP2014522943A JP2014524158A5 JP 2014524158 A5 JP2014524158 A5 JP 2014524158A5 JP 2014522943 A JP2014522943 A JP 2014522943A JP 2014522943 A JP2014522943 A JP 2014522943A JP 2014524158 A5 JP2014524158 A5 JP 2014524158A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- silicon compound
- metal
- forming
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000003377 silicon compounds Chemical group 0.000 claims 31
- 239000002184 metal Substances 0.000 claims 24
- 229910052751 metal Inorganic materials 0.000 claims 24
- 238000000034 method Methods 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161512226P | 2011-07-27 | 2011-07-27 | |
| US61/512,226 | 2011-07-27 | ||
| US13/547,527 US8987102B2 (en) | 2011-07-27 | 2012-07-12 | Methods of forming a metal silicide region in an integrated circuit |
| US13/547,527 | 2012-07-12 | ||
| PCT/US2012/047986 WO2013016341A2 (en) | 2011-07-27 | 2012-07-24 | Methods of forming a metal silicide region in an integrated circuit |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014524158A JP2014524158A (ja) | 2014-09-18 |
| JP2014524158A5 true JP2014524158A5 (enExample) | 2015-09-10 |
| JP5992521B2 JP5992521B2 (ja) | 2016-09-14 |
Family
ID=47596561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014522943A Expired - Fee Related JP5992521B2 (ja) | 2011-07-27 | 2012-07-24 | 集積回路内に金属ケイ素化合物領域を形成する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8987102B2 (enExample) |
| JP (1) | JP5992521B2 (enExample) |
| KR (1) | KR102030676B1 (enExample) |
| CN (1) | CN103650112A (enExample) |
| TW (1) | TWI564993B (enExample) |
| WO (1) | WO2013016341A2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140065819A1 (en) * | 2012-09-03 | 2014-03-06 | Intermolecular, Inc. | Methods and Systems for Low Resistance Contact Formation |
| US11012461B2 (en) | 2016-10-27 | 2021-05-18 | Accenture Global Solutions Limited | Network device vulnerability prediction |
| WO2020191068A1 (en) * | 2019-03-20 | 2020-09-24 | Tokyo Electron Limited | Method of selectively forming metal silicides for semiconductor devices |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106566A (ja) * | 1993-10-01 | 1995-04-21 | Nippondenso Co Ltd | 半導体装置の製造方法 |
| JPH0923005A (ja) * | 1995-07-06 | 1997-01-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JPH0964349A (ja) * | 1995-08-22 | 1997-03-07 | Sony Corp | 高融点シリサイドを持つ半導体装置とその製造方法 |
| KR100273271B1 (ko) * | 1998-01-16 | 2001-02-01 | 김영환 | 실리사이드제조방법 |
| US6403472B1 (en) | 1999-06-23 | 2002-06-11 | Harris Corporation | Method of forming resistive contacts on intergrated circuits with mobility spoiling ions including high resistive contacts and low resistivity silicide contacts |
| JP2001053017A (ja) * | 1999-08-06 | 2001-02-23 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2003188274A (ja) * | 2001-12-19 | 2003-07-04 | Toshiba Corp | 半導体装置及びその製造方法 |
| FR2856514A1 (fr) | 2003-06-20 | 2004-12-24 | St Microelectronics Sa | Procede de formation selective de siliciure sur une plaque de materiau semi-conducteur |
| JP2005093907A (ja) * | 2003-09-19 | 2005-04-07 | Sharp Corp | 半導体装置およびその製造方法 |
| JP2006196646A (ja) * | 2005-01-13 | 2006-07-27 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| JP2007019205A (ja) * | 2005-07-07 | 2007-01-25 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US7576407B2 (en) * | 2006-04-26 | 2009-08-18 | Samsung Electronics Co., Ltd. | Devices and methods for constructing electrically programmable integrated fuses for low power applications |
| US7807556B2 (en) * | 2006-12-05 | 2010-10-05 | General Electric Company | Method for doping impurities |
| JP2010016302A (ja) * | 2008-07-07 | 2010-01-21 | Panasonic Corp | 半導体装置及びその製造方法 |
| US20100164001A1 (en) * | 2008-12-30 | 2010-07-01 | Joodong Park | Implant process for blocked salicide poly resistor and structures formed thereby |
| KR101149043B1 (ko) * | 2009-10-30 | 2012-05-24 | 에스케이하이닉스 주식회사 | 매립형 비트라인을 구비하는 반도체 장치 및 그 제조방법 |
-
2012
- 2012-07-12 US US13/547,527 patent/US8987102B2/en active Active
- 2012-07-18 TW TW101125845A patent/TWI564993B/zh not_active IP Right Cessation
- 2012-07-24 CN CN201280034286.4A patent/CN103650112A/zh active Pending
- 2012-07-24 KR KR1020147005108A patent/KR102030676B1/ko active Active
- 2012-07-24 WO PCT/US2012/047986 patent/WO2013016341A2/en not_active Ceased
- 2012-07-24 JP JP2014522943A patent/JP5992521B2/ja not_active Expired - Fee Related
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