TWI564993B - 在積體電路中形成金屬矽化物區域的方法 - Google Patents

在積體電路中形成金屬矽化物區域的方法 Download PDF

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Publication number
TWI564993B
TWI564993B TW101125845A TW101125845A TWI564993B TW I564993 B TWI564993 B TW I564993B TW 101125845 A TW101125845 A TW 101125845A TW 101125845 A TW101125845 A TW 101125845A TW I564993 B TWI564993 B TW I564993B
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TW
Taiwan
Prior art keywords
region
metal
telluride
germanide
layer
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TW101125845A
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English (en)
Chinese (zh)
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TW201306174A (zh
Inventor
沃德麥克Ｇ
佩德斯伊格Ｖ
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應用材料股份有限公司
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Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201306174A publication Critical patent/TW201306174A/zh
Application granted granted Critical
Publication of TWI564993B publication Critical patent/TWI564993B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW101125845A 2011-07-27 2012-07-18 在積體電路中形成金屬矽化物區域的方法 TWI564993B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161512226P 2011-07-27 2011-07-27
US13/547,527 US8987102B2 (en) 2011-07-27 2012-07-12 Methods of forming a metal silicide region in an integrated circuit

Publications (2)

Publication Number Publication Date
TW201306174A TW201306174A (zh) 2013-02-01
TWI564993B true TWI564993B (zh) 2017-01-01

Family

ID=47596561

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101125845A TWI564993B (zh) 2011-07-27 2012-07-18 在積體電路中形成金屬矽化物區域的方法

Country Status (6)

Country Link
US (1) US8987102B2 (enExample)
JP (1) JP5992521B2 (enExample)
KR (1) KR102030676B1 (enExample)
CN (1) CN103650112A (enExample)
TW (1) TWI564993B (enExample)
WO (1) WO2013016341A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140065819A1 (en) * 2012-09-03 2014-03-06 Intermolecular, Inc. Methods and Systems for Low Resistance Contact Formation
US11012461B2 (en) 2016-10-27 2021-05-18 Accenture Global Solutions Limited Network device vulnerability prediction
WO2020191068A1 (en) * 2019-03-20 2020-09-24 Tokyo Electron Limited Method of selectively forming metal silicides for semiconductor devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5635746A (en) * 1995-07-06 1997-06-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising a salicide structure
US20080132047A1 (en) * 2006-12-05 2008-06-05 General Electric Company Method for doping impurities
US20100237440A1 (en) * 2008-07-07 2010-09-23 Panasonic Corporation Semiconductor device and method for manufacturing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106566A (ja) * 1993-10-01 1995-04-21 Nippondenso Co Ltd 半導体装置の製造方法
JPH0964349A (ja) * 1995-08-22 1997-03-07 Sony Corp 高融点シリサイドを持つ半導体装置とその製造方法
KR100273271B1 (ko) * 1998-01-16 2001-02-01 김영환 실리사이드제조방법
US6403472B1 (en) 1999-06-23 2002-06-11 Harris Corporation Method of forming resistive contacts on intergrated circuits with mobility spoiling ions including high resistive contacts and low resistivity silicide contacts
JP2001053017A (ja) * 1999-08-06 2001-02-23 Hitachi Ltd 半導体装置の製造方法
JP2003188274A (ja) * 2001-12-19 2003-07-04 Toshiba Corp 半導体装置及びその製造方法
FR2856514A1 (fr) 2003-06-20 2004-12-24 St Microelectronics Sa Procede de formation selective de siliciure sur une plaque de materiau semi-conducteur
JP2005093907A (ja) * 2003-09-19 2005-04-07 Sharp Corp 半導体装置およびその製造方法
JP2006196646A (ja) * 2005-01-13 2006-07-27 Renesas Technology Corp 半導体装置及びその製造方法
JP2007019205A (ja) * 2005-07-07 2007-01-25 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7576407B2 (en) * 2006-04-26 2009-08-18 Samsung Electronics Co., Ltd. Devices and methods for constructing electrically programmable integrated fuses for low power applications
US20100164001A1 (en) * 2008-12-30 2010-07-01 Joodong Park Implant process for blocked salicide poly resistor and structures formed thereby
KR101149043B1 (ko) * 2009-10-30 2012-05-24 에스케이하이닉스 주식회사 매립형 비트라인을 구비하는 반도체 장치 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5635746A (en) * 1995-07-06 1997-06-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising a salicide structure
US20080132047A1 (en) * 2006-12-05 2008-06-05 General Electric Company Method for doping impurities
US20100237440A1 (en) * 2008-07-07 2010-09-23 Panasonic Corporation Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
WO2013016341A2 (en) 2013-01-31
KR20140063644A (ko) 2014-05-27
US8987102B2 (en) 2015-03-24
KR102030676B1 (ko) 2019-10-10
JP2014524158A (ja) 2014-09-18
TW201306174A (zh) 2013-02-01
WO2013016341A3 (en) 2013-04-18
JP5992521B2 (ja) 2016-09-14
CN103650112A (zh) 2014-03-19
US20130026617A1 (en) 2013-01-31

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