JP2014522561A - アイソレータおよびアイソレータの製造方法 - Google Patents
アイソレータおよびアイソレータの製造方法 Download PDFInfo
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Abstract
【解決手段】アイソレータは、受信回路、送信回路12、トランス13によって構成される。送信回路12は、半導体基板20のおもて面に設けられている。トランス13は、半導体基板20の裏面に設けられ、送信回路12から入力された信号を電気的に絶縁した状態で受信回路に伝達する。トランス13は、一次コイル31−1および二次コイル32−1で構成される。一次コイル31−1は、コイル用トレンチ31−2の内部の酸化膜21−3の内側に埋め込まれた金属膜で構成される。二次コイル32−1は、一次コイル31−1を覆う絶縁膜22の内部に、一次コイル31−1と対向して設けられ、絶縁膜22によって一次コイル31−1と絶縁されている。
【選択図】図2
Description
図1は、実施の形態1にかかるアイソレータを適用した半導体装置の全体構成の一例を示すブロック図である。まず、本発明にかかるアイソレータを適用した半導体装置の全体構成の一例について説明する。図1に示す半導体装置は、直列に接続された2つの第1,2MOSFET(Metal−Oxide−Semiconductor Field Effect Transistor:絶縁ゲート型電界効果トランジスタ)1,2で構成されたブリッジ回路3と、上側アームの第1MOSFET1を駆動する第1駆動回路11を備えたアイソレータ10と、下側アームの第2MOSFET2を駆動する第2駆動回路21と、によって構成される。
図15は、実施の形態2にかかるアイソレータを模式的に示す断面図である。実施の形態2にかかるアイソレータ100が実施の形態1にかかるアイソレータと異なるのは、トランス搭載チップ20のバンプ電極32−2を、信号受信チップ50の受信回路11の端子51に直接接続したことである。すなわち、実施の形態2においては、トランス搭載チップ20に設けられた二次コイル32−1と、信号受信チップ50に設けられた受信回路11との接続にボンディングワイヤを用いていない。
図16は、実施の形態3にかかるアイソレータを適用した半導体装置の全体構成の一例を示すブロック図である。実施の形態3にかかるアイソレータ110が実施の形態1にかかるアイソレータと異なるのは、次の2点である。1つ目の相違点は、信号制御回路(以下、第1信号制御回路とする)121の基本的な回路部に、送信回路だけでなく、さらに他の信号制御回路(以下、第2信号制御回路とする)122からの信号を受信する受信回路が構成されていることである。そして、2つ目の相違点は、第1駆動回路に代えて、さらに第2信号制御回路122および第2トランス123を備え、アイソレータ110に設けた2つの第1,2トランス13,123によりレベルアップ機能とレベルダウン機能とを実現したことである。
12 信号制御回路(送信回路)
13 トランス
20 半導体基板
21−1,21−2 酸化膜
22 絶縁膜
31−1 一次コイル
31−1a,31−1b 一次コイルの端部
31−2 コイル用トレンチ
31−2a,31−2b コイル用トレンチの端部
31−3 一次コイルの端子
31−4 ビア用トレンチ
32−1 二次コイル
32−2 バンプ電極
t 絶縁膜の、一次コイルと二次コイルとに挟まれた部分の厚さ
Claims (11)
- 第1半導体基板の第1主面に設けられた送信回路と、
前記送信回路に電気的に接続された一次コイルと、受信回路に電気的に接続された二次コイルとが互いに電気的に絶縁された状態で対向する構成を有し、前記送信回路の信号を電気的に絶縁した状態で前記受信回路に伝送するトランスと、
を備え、
前記トランスは、前記第1半導体基板の、前記送信回路が設けられた領域の第2主面側に配置されていることを特徴とするアイソレータ。 - 前記第1半導体基板の第2主面に設けられたトレンチと、
前記トレンチの側壁および底面に沿って設けられた酸化膜と、
前記トレンチの内部の前記酸化膜の内側に埋め込まれ、前記第1半導体基板の第2主面に露出した金属膜で構成された前記一次コイルと、
前記一次コイルを覆う絶縁膜と、
前記絶縁膜の内部に前記一次コイルに対向して設けられ、かつ前記絶縁膜によって前記一次コイルと電気的に絶縁された金属膜で構成された前記二次コイルと、
を備えることを特徴とする請求項1に記載のアイソレータ。 - 前記第1半導体基板の第1主面から前記トレンチに達するビアホールをさらに備え、
前記ビアホールに埋め込まれた金属膜によって、前記送信回路と前記一次コイルとが電気的に接続されていることを特徴とする請求項1または2に記載のアイソレータ。 - 前記二次コイルに設けられたバンプ電極をさらに備え、
前記第1半導体基板は、前記バンプ電極を介して実装されていることを特徴とする請求項1〜3のいずれか一つに記載のアイソレータ。 - 前記送信回路からの信号を受信する受信回路をさらに備え、
前記受信回路は、前記第1半導体基板と異なる第2半導体基板に設けられていることを特徴とする請求項1〜4のいずれか一つに記載のアイソレータ。 - 第1半導体基板の第1主面に設けられた第1送信回路と、
第2半導体基板の第1主面に設けられた第2送信回路と、
第1半導体基板の第1主面に設けられ、前記第2送信回路からの信号を受信する第1受信回路と、
前記第2半導体基板の第1主面に設けられ、前記第1送信回路からの信号を受信する第2受信回路と、
前記第1送信回路に電気的に接続された一次コイルと、前記第2受信回路に電気的に接続された二次コイルとが互いに電気的に絶縁された状態で対向する構成を有し、前記第1送信回路から前記第2受信回路への信号の電位レベルをシフトする第1トランスと、
前記第2送信回路に電気的に接続された一次コイルと、前記第1受信回路に電気的に接続された二次コイルとが互いに電気的に絶縁された状態で対向する構成を有し、前記第2送信回路から前記第1受信回路への信号の電位レベルをシフトする第2トランスと、
を備え、
前記第1トランスは、前記第1半導体基板の、前記第1送信回路が設けられた領域の第2主面側に配置され、
前記第2トランスは、前記第2半導体基板の、前記第2送信回路が設けられた領域の第2主面側に配置されていることを特徴とするアイソレータ。 - 半導体基板の第1主面に送信回路を形成する送信回路形成工程と、
前記半導体基板の、前記送信回路が形成された領域の第2主面にトレンチを形成するトレンチ形成工程と、
前記トレンチの側壁および底面に沿って酸化膜を形成する酸化膜形成工程と、
前記トレンチの内部の前記酸化膜の内側に、前記半導体基板の第2主面に露出するように第1金属膜を埋め込む第1金属膜形成工程と、
前記半導体基板の第2主面に、前記第1金属膜を覆うように絶縁膜を形成する絶縁膜形成工程と、
前記絶縁膜の内部に、前記第1金属膜に対向し、かつ前記絶縁膜によって前記第1金属膜と電気的に絶縁された第2金属膜を形成する第2金属膜形成工程と、
を含むことを特徴とするアイソレータの製造方法。 - 前記トレンチ形成工程では、前記半導体基板の第1主面から前記トレンチに達するビアホールを形成し、
前記酸化膜形成工程では、さらに前記ビアホールの側壁に沿って前記酸化膜を形成し、
前記第1金属膜形成工程では、前記ビアホールの内部の前記酸化膜の内側にも前記第1金属膜を埋め込むことを特徴とする請求項7に記載のアイソレータの製造方法。 - 前記第1金属膜形成工程では、前記トレンチの内部に前記第1金属膜を埋め込むと同時に、前記ビアホールの内部に前記第1金属膜を埋め込むことを特徴とする請求項8に記載のアイソレータの製造方法。
- 前記第1金属膜形成工程では、電解めっき処理によって前記第1金属膜を形成することを特徴とする請求項7〜9のいずれか一つに記載のアイソレータの製造方法。
- 前記第2金属膜形成工程では、電解めっき処理によって前記第2金属膜を形成することを特徴とする請求項7〜10のいずれか一つに記載のアイソレータの製造方法。
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