JP2014517498A5 - - Google Patents

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JP2014517498A5
JP2014517498A5 JP2014503180A JP2014503180A JP2014517498A5 JP 2014517498 A5 JP2014517498 A5 JP 2014517498A5 JP 2014503180 A JP2014503180 A JP 2014503180A JP 2014503180 A JP2014503180 A JP 2014503180A JP 2014517498 A5 JP2014517498 A5 JP 2014517498A5
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substrate
transfer chamber
reaction chamber
substrate transfer
chamber
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JP2014503180A
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JP2014517498A (ja
JP5885830B2 (ja
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Priority claimed from PCT/FI2011/050302 external-priority patent/WO2012136875A1/en
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いくつかの実施形態において、堆積反応炉は前記プラズマ源と前記反応室との間に基板移送室を備える。基板移送室は、ロードロック用のインタフェースを備えてもよい。
図１は、堆積反応炉（プラズマＡＬＤ反応炉など）の側面図である。本堆積反応炉は、基板移送室１２０の下方、ＡＬＤ反応炉モジュール１３０の内部に反応室（図１には図示せず）を備える。原料ガスは、原料ガス管路１０１を通って反応室の上側にあるプラズマ源１１０に流入する。プラズマ源１１０によって原料ガスから発生させたラジカルが管路１０２を通って反応室に向かって流れる。プラズマ源１１０と反応室との間に基板移送室１２０がある。少なくとも１つの基板が基板移送室１２０を介して反応室内に装填される。基板移送室１２０は、前記少なくとも１つの基板を装填するためのロードロックなどに対するインタフェースを備える。一例示的実施形態において、このインタフェースは、ゲート弁を有するロードロックを取り付け可能なロードロックフランジ１２２などでもよい。一例示的実施形態において、少なくとも１つの基板を移送室内へ装填する手順は、自動化されてもよい。あるいは、少なくとも１つの基板を手動で装填してもよい。移送室に組み込まれた大型ハッチ１２３は、手動装填および取り出しに特に適している。
JP2014503180A 2011-04-07 2011-04-07 プラズマ源を有する堆積反応炉 Active JP5885830B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2011/050302 WO2012136875A1 (en) 2011-04-07 2011-04-07 Deposition reactor with plasma source

Publications (3)

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JP2014517498A JP2014517498A (ja) 2014-07-17
JP2014517498A5 true JP2014517498A5 (ja) 2015-07-16
JP5885830B2 JP5885830B2 (ja) 2016-03-16

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JP2014503180A Active JP5885830B2 (ja) 2011-04-07 2011-04-07 プラズマ源を有する堆積反応炉

Country Status (9)

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US (1) US10494718B2 (ja)
EP (1) EP2694701B1 (ja)
JP (1) JP5885830B2 (ja)
KR (4) KR101923087B1 (ja)
CN (1) CN103459660B (ja)
RU (1) RU2571547C2 (ja)
SG (1) SG11201405415TA (ja)
TW (1) TWI519673B (ja)
WO (1) WO2012136875A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101923087B1 (ko) 2011-04-07 2018-11-28 피코순 오와이 플라즈마 소오스를 갖는 퇴적 반응기
SG11201503227XA (en) 2012-11-23 2015-06-29 Picosun Oy Substrate loading in an ald reactor
US9624578B2 (en) * 2014-09-30 2017-04-18 Lam Research Corporation Method for RF compensation in plasma assisted atomic layer deposition
FI126970B (en) * 2014-12-22 2017-08-31 Picosun Oy Atomic layer cultivation in which the first and second species of source materials are present simultaneously
CN109072430A (zh) * 2016-04-12 2018-12-21 皮考逊公司 通过ald进行涂覆以用于抑制金属晶须
KR20240028568A (ko) * 2016-09-16 2024-03-05 피코순 오와이 원자층 증착을 위한 장치 및 방법
DE17895903T1 (de) * 2017-02-08 2020-01-16 Picosun Oy Abscheidungs- oder Reinigungsvorrichtung mit beweglicher Struktur und Verfahren zum Betrieb
JP6445603B2 (ja) * 2017-03-07 2018-12-26 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ Ａｌｄ反応炉における基板の装填
CN106987826B (zh) * 2017-05-22 2019-03-12 沈阳拓荆科技有限公司 一种双腔式等离子体沉积镀膜方法
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
FI129609B (en) * 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT
RU2752059C1 (ru) * 2020-07-14 2021-07-22 Пикосан Ой Устройство для атомно-слоевого осаждения (ald)
RU2748658C1 (ru) * 2020-07-16 2021-05-28 Пикосан Ой Устройство для осаждения или очистки с подвижной конструкцией и способ его эксплуатации
JP7308330B2 (ja) * 2021-05-10 2023-07-13 ピコサン オーワイ 基板処理装置及び方法
FI130545B (en) * 2021-09-14 2023-11-08 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT AND METHOD

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2880902A (en) * 1957-06-03 1959-04-07 Owsen Peter Collapsible article
US3138483A (en) * 1960-01-11 1964-06-23 Polymer Processes Inc Apparatus for coating interior of hollow body
SU769834A1 (ru) * 1978-07-20 1981-09-07 Институт Физики Полупроволников Со Ан Ссср Устройство дл осождени слоев из газовой фазы
JPS63136921U (ja) * 1987-03-02 1988-09-08
US5088444A (en) * 1989-03-15 1992-02-18 Kabushiki Kaisha Toshiba Vapor deposition system
JPH0336274A (ja) 1989-06-30 1991-02-15 Sony Corp プラズマ装置
US5458685A (en) * 1992-08-12 1995-10-17 Tokyo Electron Kabushiki Kaisha Vertical heat treatment apparatus
JPH0845907A (ja) 1994-07-29 1996-02-16 Toshiba Corp 半導体装置のプラズマ処理方法
KR100239405B1 (ko) 1996-10-24 2000-01-15 김영환 반도체 제조장치
RU2099440C1 (ru) * 1997-01-24 1997-12-20 Плазма Текнололоджи Лимитед Способ обработки поверхностей и устройство для его осуществления
UA69453C2 (uk) * 2001-11-20 2004-09-15 Науковий Центр "Інститут Ядерних Досліджень" Національної Академії Наук України Плазмохімічний реактор
JP2004296490A (ja) 2003-03-25 2004-10-21 Tokyo Electron Ltd 処理装置
US7399388B2 (en) 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
JP4879509B2 (ja) 2004-05-21 2012-02-22 株式会社アルバック 真空成膜装置
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
KR100640550B1 (ko) * 2005-01-26 2006-10-31 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
FI119478B (fi) * 2005-04-22 2008-11-28 Beneq Oy Reaktori
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US8282334B2 (en) 2008-08-01 2012-10-09 Picosun Oy Atomic layer deposition apparatus and loading methods
US20100183825A1 (en) * 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101923087B1 (ko) 2011-04-07 2018-11-28 피코순 오와이 플라즈마 소오스를 갖는 퇴적 반응기

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