JP2014517498A - プラズマ源を有する堆積反応炉 - Google Patents
プラズマ源を有する堆積反応炉 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 127
- 238000006243 chemical reaction Methods 0.000 claims abstract description 93
- 238000011068 loading method Methods 0.000 claims abstract description 28
- 230000007246 mechanism Effects 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 8
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 8
- 239000000376 reactant Substances 0.000 claims abstract description 6
- 238000006557 surface reaction Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 17
- 238000012546 transfer Methods 0.000 claims description 17
- 230000003028 elevating effect Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 52
- 238000000231 atomic layer deposition Methods 0.000 description 33
- 239000007789 gas Substances 0.000 description 28
- 239000002243 precursor Substances 0.000 description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 238000010926 purge Methods 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 239000010409 thin film Substances 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 7
- 229910001882 dioxygen Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000003877 atomic layer epitaxy Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007175 bidirectional communication Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Abstract
【選択図】図10
Description
反応物をプラズマ源から反応室に向けて上から下への流れとして導くように構成された拡張空間を画成する供給部であって、この拡張空間が反応室に向かって広がる供給部と、
少なくとも1つの基板を反応室の上側から反応室に装填するための昇降機構と、
を備え、
本堆積反応炉は、反応室内の前記少なくとも1つの基板に連続自己飽和表面反応によって材料を堆積させるように構成される。
上記実施形態の何れかによる堆積反応炉を作動させること、
を含む方法が提供される。
Claims (15)
- 堆積反応炉であって、
反応物をプラズマ源から反応室に向けて上から下への流れとして導くように構成された拡張空間を画成する供給部であって、前記拡張空間が前記反応室に向かって広がる供給部と、
少なくとも1つの基板を前記反応室の上側から前記反応室に装填するための昇降機構と、
を備え、
前記堆積反応炉は、前記反応室内の前記少なくとも1つの基板上に連続自己飽和表面反応によって材料を堆積させるように構成される、
堆積反応炉。 - 前記昇降機構は前記供給部の寸法を変えるように構成される、請求項1に記載の堆積反応炉。
- 前記供給部は収縮形状と伸長形状とを有し、前記昇降機構は前記供給部を前記伸長形状から前記収縮形状に移行させるよう、該供給部を押すまたは引くように構成され、前記供給部がその収縮形状のときに前記少なくとも1つの基板の前記装填を可能にする、請求項1または2に記載の堆積反応炉。
- 前記供給部は鉛直方向に変形するように構成される、請求項1から3の何れか1項に記載の堆積反応炉。
- 前記供給部は相互に嵌入するよう移動可能な1組の入れ子部分またはリング状部材を備える、請求項1から4の何れか1項に記載の堆積反応炉。
- 前記供給部は2つの入れ子部分で構成される、請求項1から5の何れか1項に記載の堆積反応炉。
- 前記供給部は拡張空間のフランジに取り付けられ、前記フランジは、堆積中、前記反応室の上側フランジに嵌着される、請求項1から6の何れか1項に記載の堆積反応炉。
- 前記昇降機構は、前記少なくとも1つの基板を担持する基板ホルダを装填または取り出しのための上方位置と堆積のための下方位置との間で移動させるように構成される、請求項1から7の何れか1項に記載の堆積反応炉。
- 前記プラズマ源と前記反応室との間に基板移送室を備える、請求項1から8の何れか1項に記載の堆積反応炉。
- 前記基板移送室は、ロードロック用の界面を備える、請求項8に記載の堆積反応炉。
- 前記供給部に手動式アクセスハッチを備える、請求項1に記載の堆積反応炉。
- 前記昇降機構は、対称的に載置された複数の昇降機を備える、請求項1から11の何れか1項に記載の堆積反応炉。
- 前記堆積反応炉は、前記少なくとも1つの基板を担持する基板ホルダを前記反応空間内の前記ガス流に対する一次障害物として使用するように構成される、請求項1から12の何れか1項に記載の堆積反応炉。
- 前記基板ホルダと反応室壁との間に流れ調整部を備える、請求項1から13の何れか1項に記載の堆積反応炉。
- 請求項1から14の何れか1項に記載の堆積反応炉を作動させること、
を含む方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/FI2011/050302 WO2012136875A1 (en) | 2011-04-07 | 2011-04-07 | Deposition reactor with plasma source |
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JP2014517498A true JP2014517498A (ja) | 2014-07-17 |
JP2014517498A5 JP2014517498A5 (ja) | 2015-07-16 |
JP5885830B2 JP5885830B2 (ja) | 2016-03-16 |
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JP2014503180A Active JP5885830B2 (ja) | 2011-04-07 | 2011-04-07 | プラズマ源を有する堆積反応炉 |
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CN (1) | CN103459660B (ja) |
RU (1) | RU2571547C2 (ja) |
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KR102265704B1 (ko) | 2011-04-07 | 2021-06-16 | 피코순 오와이 | 플라즈마 소오스를 갖는 퇴적 반응기 |
RU2620230C2 (ru) * | 2012-11-23 | 2017-05-23 | Пикосан Ой | Способ загрузки подложки в реактор асо |
US9624578B2 (en) * | 2014-09-30 | 2017-04-18 | Lam Research Corporation | Method for RF compensation in plasma assisted atomic layer deposition |
FI126970B (en) * | 2014-12-22 | 2017-08-31 | Picosun Oy | Atomic layer cultivation in which the first and second species of source materials are present simultaneously |
JP6839206B2 (ja) * | 2016-04-12 | 2021-03-03 | ピコサン オーワイPicosun Oy | 金属ウィスカの軽減のためのaldによる被覆 |
JP7037551B2 (ja) * | 2016-09-16 | 2022-03-16 | ピコサン オーワイ | 原子層堆積のための装置および方法 |
JP6697640B2 (ja) * | 2017-02-08 | 2020-05-20 | ピコサン オーワイPicosun Oy | 可動構造をもつ堆積またはクリーニング装置および動作方法 |
JP6445603B2 (ja) * | 2017-03-07 | 2018-12-26 | ピコサン オーワイPicosun Oy | Ald反応炉における基板の装填 |
CN106987826B (zh) * | 2017-05-22 | 2019-03-12 | 沈阳拓荆科技有限公司 | 一种双腔式等离子体沉积镀膜方法 |
US10697059B2 (en) | 2017-09-15 | 2020-06-30 | Lam Research Corporation | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching |
FI129609B (en) * | 2020-01-10 | 2022-05-31 | Picosun Oy | SUBSTRATE PROCESSING EQUIPMENT |
RU2752059C1 (ru) * | 2020-07-14 | 2021-07-22 | Пикосан Ой | Устройство для атомно-слоевого осаждения (ald) |
RU2748658C1 (ru) * | 2020-07-16 | 2021-05-28 | Пикосан Ой | Устройство для осаждения или очистки с подвижной конструкцией и способ его эксплуатации |
JP7308330B2 (ja) * | 2021-05-10 | 2023-07-13 | ピコサン オーワイ | 基板処理装置及び方法 |
FI130545B (en) * | 2021-09-14 | 2023-11-08 | Picosun Oy | SUBSTRATE PROCESSING EQUIPMENT AND METHOD |
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EP2694701B1 (en) | 2015-11-25 |
US10494718B2 (en) | 2019-12-03 |
KR101807231B1 (ko) | 2017-12-08 |
CN103459660A (zh) | 2013-12-18 |
EP2694701A1 (en) | 2014-02-12 |
SG11201405415TA (en) | 2014-11-27 |
JP5885830B2 (ja) | 2016-03-16 |
EP2694701A4 (en) | 2014-10-22 |
KR20140023321A (ko) | 2014-02-26 |
WO2012136875A1 (en) | 2012-10-11 |
TWI519673B (zh) | 2016-02-01 |
RU2013148924A (ru) | 2015-05-20 |
KR20170137224A (ko) | 2017-12-12 |
WO2012136875A8 (en) | 2012-12-06 |
KR20200118244A (ko) | 2020-10-14 |
CN103459660B (zh) | 2016-01-06 |
KR102265704B1 (ko) | 2021-06-16 |
TW201243099A (en) | 2012-11-01 |
RU2571547C2 (ru) | 2015-12-20 |
US20140087093A1 (en) | 2014-03-27 |
KR20180128514A (ko) | 2018-12-03 |
KR101923087B1 (ko) | 2018-11-28 |
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