JP2014512693A - 環境の影響の変動を伴う基準スペクトルの構築 - Google Patents
環境の影響の変動を伴う基準スペクトルの構築 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8411—Application to online plant, process monitoring
- G01N2021/8416—Application to online plant, process monitoring and process controlling, not otherwise provided for
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
Description
として計算することができ、式中、Ep +は入射光ビームの電磁場の強度を表わし、Ep −は出射光ビームの電磁場の強度を表わす。
Ep +=(Ep+Hp/μp)/2 Ep −=(Ep−Hp/μp)/2
として計算することができる。
として計算することができ、μj=(nj−ikj)・cosφj、およびgj=2π(nj−ikj)・tj・cosφj/λであり、式中、njは層jの屈折率、kjは層jの減衰係数、tjは層jの厚さ、φjは層jに対する光の入射角、λは波長である。スタックにおける最下層、すなわち層j=0に対しては、E0=1、およびH0=μ0=(n0−ik0)・cosφ0である。各層に対する屈折率nおよび減衰係数kは、科学文献から求めることができ、波長の関数になりうる。入射角φは、スネルの法則から計算することができる。
μ’j=(nj−i(kj+mj))・cosφj g’j=2π(nj−i(kj+mj))・tj・cosφj/λ
として計算され、式中、mjは層jの減衰係数を増加させる量である。一般に、mjは0以上であり、最大1になりえる。スタックの上部に近い層に対しては、mjは小さく、例えば0になりえる。より深い層に対しては、mjはより大きく、例えば0.2、0.4または0.6になりえる。量mjは、jの減少とともに単調に増加することができる。量mjは、例えば、特定の層に対しては波長の関数となる場合があり、mjは、より長い波長でより大きくなることがあり、またはより短い波長でより大きくなることがある。
として計算することができ、式中、Aは追加のスペクトル、DAは暗条件下でパッド耐用期間において追加のスペクトルと同時にインシトゥモニタシステムが受け取るスペクトル、Bは基本スペクトル、DBは暗条件下でパッド耐用期間において基本スペクトルと同時にインシトゥモニタシステムが受け取るスペクトルである。
Claims (14)
- 基準スペクトルのライブラリを生成する方法であって、
少なくとも1つの基準スペクトルを記憶することと、
基板表面の前の光路中の構成要素の変動によってもたらされるスペクトルに対するひずみを表す、複数の異なる透過率曲線を記憶することと、
前記複数の異なる透過率曲線のうちの少なくとも2つの透過率曲線に対して、前記基準スペクトルおよび前記透過率曲線から修正された基準スペクトルを計算して複数の修正された基準スペクトルを生成することと
を含む方法。 - 前記異なる透過率曲線が1つまたは複数のウインドウの透過率の変動を表す、請求項1に記載の方法。
- 前記異なる透過率曲線が研磨パッドのウインドウの異なる経時期間におけるスペクトルに対するひずみを表す、請求項2に記載の方法。
- 前記異なる透過率曲線が異なるウインドウを表す、請求項2に記載の方法。
- 前記異なる透過率曲線が光源からのバルブの異なる経時期間におけるスペクトルに対するひずみを表す、請求項1に記載の方法。
- 前記複数の異なる透過率曲線を生成することをさらに含む、請求項1に記載の方法。
- 前記複数の異なる透過率曲線を生成することが、インシトゥ光学モニタシステムを使用してテスト基板からの基本スペクトルを測定することと、異なる時間に前記インシトゥ光学モニタシステムを使用して、同一のテスト基板または同一材料の別のテスト基板からの1つまたは複数の追加のスペクトルを測定することと、前記基本スペクトルおよび前記1つまたは複数の追加のスペクトルから前記透過率曲線を計算することとを含む、請求項6に記載の方法。
- 前記透過率曲線を計算することが、前記追加のスペクトルが分子にあり、前記基本スペクトルが分母にある除算演算を含む、請求項7に記載の方法。
- 前記テスト基板がベアのシリコンウエハを含む、請求項7に記載の方法。
- 前記複数の異なる透過率曲線を生成することが光学モデルから前記透過率曲線を計算することを含む、請求項6に記載の方法。
- 前記修正された基準スペクトルを計算することが前記基準スペクトルを前記透過率曲線で乗算することを含む、請求項1に記載の方法。
- 前記透過率曲線が波長の関数として0と1の間の比として記憶される、請求項12に記載の方法。
- 研磨を制御する方法であって、
請求項1に記載の前記方法に従って基準スペクトルのライブラリを生成することと、
基板を研磨することと、
研磨中に前記基板からの光のスペクトルのシーケンスを測定することと、
前記スペクトルのシーケンスの測定スペクトルそれぞれに対して、最良一致の基準スペクトルを見いだし、最良一致の基準スペクトルのシーケンスを生成することと、
前記最良一致の基準スペクトルのシーケンスに基づいて研磨終点および研磨速度に対する調節のうちの少なくとも1つを決定することと
を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US13/091,965 US8547538B2 (en) | 2011-04-21 | 2011-04-21 | Construction of reference spectra with variations in environmental effects |
US13/091,965 | 2011-04-21 | ||
PCT/US2012/034109 WO2012145418A2 (en) | 2011-04-21 | 2012-04-18 | Construction of reference spectra with variations in environmental effects |
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JP2014512693A true JP2014512693A (ja) | 2014-05-22 |
JP2014512693A5 JP2014512693A5 (ja) | 2015-06-11 |
JP6017538B2 JP6017538B2 (ja) | 2016-11-02 |
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US (1) | US8547538B2 (ja) |
JP (1) | JP6017538B2 (ja) |
KR (1) | KR101930111B1 (ja) |
TW (1) | TWI465314B (ja) |
WO (1) | WO2012145418A2 (ja) |
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KR20190142571A (ko) * | 2018-06-18 | 2019-12-27 | 주식회사 케이씨텍 | 패드 모니터링 장치 및 이를 포함하는 패드 모니터링 시스템, 패드 모니터링 방법 |
CN112936090A (zh) * | 2019-12-10 | 2021-06-11 | 株式会社荏原制作所 | 研磨方法及研磨装置 |
WO2022059708A1 (ja) * | 2020-09-15 | 2022-03-24 | 国立大学法人長岡技術科学大学 | 研磨状態解析予測プログラム、記憶装置、カソードルミネセンス装置、および研磨状態解析予測方法 |
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US8747189B2 (en) * | 2011-04-26 | 2014-06-10 | Applied Materials, Inc. | Method of controlling polishing |
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US20150055132A1 (en) * | 2012-04-05 | 2015-02-26 | Renishaw Diagnostics Limited | Method for calibrating spectroscopy apparatus and equipment for use in the method |
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CN110617786A (zh) * | 2018-06-18 | 2019-12-27 | 凯斯科技股份有限公司 | 垫监测装置及包括其的垫监测系统、垫监测方法 |
KR102580487B1 (ko) * | 2018-06-18 | 2023-09-21 | 주식회사 케이씨텍 | 패드 모니터링 장치 및 이를 포함하는 패드 모니터링 시스템, 패드 모니터링 방법 |
CN112936090A (zh) * | 2019-12-10 | 2021-06-11 | 株式会社荏原制作所 | 研磨方法及研磨装置 |
JP2021091038A (ja) * | 2019-12-10 | 2021-06-17 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
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JP7469032B2 (ja) | 2019-12-10 | 2024-04-16 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
WO2022059708A1 (ja) * | 2020-09-15 | 2022-03-24 | 国立大学法人長岡技術科学大学 | 研磨状態解析予測プログラム、記憶装置、カソードルミネセンス装置、および研磨状態解析予測方法 |
JPWO2022059708A1 (ja) * | 2020-09-15 | 2022-03-24 | ||
JP7503740B2 (ja) | 2020-09-15 | 2024-06-21 | 国立大学法人長岡技術科学大学 | 研磨状態解析予測プログラム、記憶装置、カソードルミネセンス装置、および研磨状態解析予測方法 |
Also Published As
Publication number | Publication date |
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TW201249599A (en) | 2012-12-16 |
KR101930111B1 (ko) | 2018-12-17 |
WO2012145418A3 (en) | 2013-01-24 |
US8547538B2 (en) | 2013-10-01 |
US20120268738A1 (en) | 2012-10-25 |
WO2012145418A2 (en) | 2012-10-26 |
JP6017538B2 (ja) | 2016-11-02 |
TWI465314B (zh) | 2014-12-21 |
KR20140025487A (ko) | 2014-03-04 |
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