534854 A7 B7534854 A7 B7
五、發明説明G 發明領域 概括地説.，本發明是有關於用以量測物件表面研磨狀態 的方法和裝置。更特別地説，是有關於在化學機械研磨法 (CMP )中，用以量測晶圓表面的研磨狀態之方法和裝置。 發明背景 典型地，積體電路是在基板上所形成，特別是在矽晶 圓。積體電路是藉著置放分別具有導體、半導體或絕緣體 等性質的不同層而形成的。置放每一層後，接著會併入電 路的特徵，例如，藉著蝕刻。在循序的過程中，基板的上 表面變得越來越不平整。於是基板的表面要弄平整以提供 相當平整的表面。 例如，如此的平整工作可藉著化學機械研磨法（CMP )來 達成。一般來説，在CMP製程中，會裝載基板至一載體或 是研磨頭端，移動基板露出來的表面至研磨滾筒上的研磨 墊，散布研磨漿體於研磨墊上。該研磨漿體中包括了研磨 物的成分以及至少一種化學觸媒。於是在蟄和晶圓之間的 介面，提供了一種研磨用的化學溶劑，使研磨最佳化。 一般來説，爲了找到一個研磨端點或是要決定層的厚 度，會想去控制CMP製程。 依據先前技藝，是以手動或是自動回饋控制去執行先前 及/或後續的晶圓量測的控制過程。可以在緊接著研磨之前 和研磨之後去量測濕晶圓的系統是有效可利用的。因爲監 督了研磨前和研磨後的表面狀況，所以可能去改變研磨參 數。因而，在系列的生產中，使研磨最佳化是可能的。然 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 534854 五、發明説明（2 者=的先前及/或後續的量測方法有以下缺點。第一個 =者=的幾個晶圓沒有最佳化的參數_他們被盲目地研 前及/ = ϋ串的生產中’晶圓的外表會改變。該先 或後續的量測方法無法考慮到晶圓如此的改變。 二了找到正確的研磨端點，有幾種端點方法可使用。現 =万法包括量測溫度、磨擦、振動、聲音等級和頻率。 ，用各種光學*測，比如説，反射量測方法。不幸 =這些過程不對所有物質有用，特別是當研磨氧化物 本發明尋求提供-種方法和裝置以減輕或避免先前技術 的这些和其他的不利和限制。 圖式簡單説明_ 圖1係表示本發明，中化學機械研磨裝置的一部分之示音 圖； 〜 圖2顯7F晶圓的一部分； 圖3顯示圖2中一部分的放大視圖；以及 圖4顯示本發明之方法的流程圖。 較佳實施例的詳纟^^ 依據本發明，一種量測物件表面研磨情況的方法，包括 下列步驟：在表面上選擇量測位置的所在；在量測位置内 取得圖像；以及分析該圖像，藉此決定表面的研磨情況。 依據本發明的另一種組態，一種量測物件表面研磨情況 的裝置，包括：在表面選擇量測位置所在的裝置；在量^ 位置内，對表面取得圖像的裝置；分析圖像的裝置以及 <決V. Description of the Invention G Field of the Invention In summary, the present invention relates to a method and a device for measuring the surface grinding state of an object. More specifically, it relates to a method and apparatus for measuring the polishing state of a wafer surface in a chemical mechanical polishing method (CMP). BACKGROUND OF THE INVENTION Typically, integrated circuits are formed on substrates, especially silicon wafers. An integrated circuit is formed by placing different layers having properties such as a conductor, a semiconductor, or an insulator. After each layer is placed, circuit features are then incorporated, for example, by etching. In a sequential process, the upper surface of the substrate becomes increasingly uneven. The surface of the substrate is then flattened to provide a fairly flat surface. Such leveling work can be achieved, for example, by chemical mechanical polishing (CMP). Generally, in the CMP process, a substrate is loaded on a carrier or a polishing head, and the exposed surface of the substrate is moved to a polishing pad on a polishing drum, and a polishing slurry is distributed on the polishing pad. The abrasive slurry contains the components of the abrasive and at least one chemical catalyst. A chemical solvent for polishing is provided at the interface between the osmium and the wafer to optimize polishing. Generally, in order to find a polishing endpoint or to determine the layer thickness, one would want to control the CMP process. According to the prior art, the control process of performing previous and / or subsequent wafer measurement is performed manually or automatically with feedback control. A system that can measure wet wafers immediately before and after grinding is effectively available. Because the surface conditions before and after grinding are monitored, it is possible to change the grinding parameters. Therefore, in series production, it is possible to optimize grinding. Ran-4- This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) 534854 V. Description of the invention (2 = previous and / or subsequent measurement methods have the following disadvantages. The first = = Of several wafers have no optimized parameters _ they were blindly studied and / = the production of 'wafer's appearance will change. The first or subsequent measurement methods cannot take into account such changes in the wafer Second, to find the correct grinding endpoint, there are several endpoint methods that can be used. The current method includes measuring temperature, friction, vibration, sound level, and frequency. Using various optical * measurements, such as reflection measurement Method. Unfortunately = these processes are not useful for all substances, especially when grinding oxides. The present invention seeks to provide a method and apparatus to mitigate or avoid these and other disadvantages and limitations of the prior art. Brief description of the drawings_ Figure 1 shows In the present invention, a sound diagram of a part of a chemical mechanical polishing device; ~ Fig. 2 shows a part of a 7F wafer; Fig. 3 shows an enlarged view of a part of Fig. 2; and Fig. 4 shows a flowchart of the method of the present invention. real Example details ^^ According to the present invention, a method for measuring the surface grinding of an object includes the following steps: selecting the location of the measurement location on the surface; obtaining an image within the measurement location; and analyzing the image, borrowing This determines the surface grinding condition. According to another configuration of the present invention, a device for measuring the surface grinding condition of an object includes: a device for selecting a measurement position on the surface; and within the measurement position, an image of the surface is obtained. Device; image analysis device < decision
534854 A7 _____ B7 五、發明説明（3 ) 定表面的研磨情況之裝置。 參照圖1，一研磨滚筒1 〇，上面载有研磨墊1 2。在研磨 浪筒10以及研磨墊12中有一個窗口 14。在研磨墊12上， 放置藉由研磨頭端（未顯示）負載的晶圓。在研磨滾筒1 〇下 有X Y堂架1 8，裝設有光源2 〇和光偵測器2 2。 圖示的元件可以有不同的配置。例如，光源2 0以及光偵 測器22可以放置得比圖1中的圖示更爲靠近，以及/或以不 同的角度對應於晶圓1 ό。配置的變化可以改變光學性質。 再者，也可以將光源2 〇以及光偵測器2 2放置得更靠近晶圓 16。這樣子可讓不同的研磨方法產生。 依據本發明的較佳實施例，載入晶圓至研磨頭端上之 可，會定位晶圓16的表面，可提供單一的研磨頭端或是複 數個研磨頭端。 、。研磨頭端的旋轉以及/或位移位置，可藉著包括於研磨頭 端^或是在研磨頭端的柄上之裝置來監視。再者，在研磨 滾筒上可包含裝置，用以監視研磨滚筒1〇的即時旋轉位 置。因此，可以得知研磨頭端的即時旋轉位置、研磨頭端 任何位移動作的即時位置以及研磨滾筒1 0的即時旋轉位 置。 41麼一來，可預測晶圓上16任何部分的位置以及和研磨 來同10上任何點的關係。這個資訊於尋找精準値在數個毫 米範圍内的量測位置24時可用上（量測位置24，圖2和3)。 因爲知悉晶圓16和研磨滾筒1〇上的窗口與研磨墊12的相 對位置。晶圓16的量測位置24何時在窗口 "上也可知 __ ·6_ ^張尺度_關家辟格(㈣χ挪公爱) 534854534854 A7 _____ B7 V. Description of the invention (3) Device for grinding the surface. Referring to FIG. 1, a polishing drum 10 is provided with a polishing pad 12 thereon. There is a window 14 in the polishing cylinder 10 and the polishing pad 12. On the polishing pad 12, a wafer loaded by a polishing head end (not shown) is placed. Below the grinding drum 10, there is a X Y frame 18, which is provided with a light source 20 and a light detector 22. The illustrated components can have different configurations. For example, the light source 20 and the light detector 22 may be placed closer than the illustration in FIG. 1 and / or correspond to the wafer 1 at different angles. Changes in configuration can change optical properties. Furthermore, the light source 20 and the light detector 22 can also be placed closer to the wafer 16. This allows different grinding methods to be produced. According to a preferred embodiment of the present invention, the wafer may be loaded on the polishing head end, the surface of the wafer 16 may be positioned, and a single polishing head end or a plurality of polishing head ends may be provided. . The rotation and / or displacement of the grinding head end can be monitored by means of a device included on the grinding head end ^ or on the handle of the grinding head end. Furthermore, the grinding drum may include a device for monitoring the instant rotation position of the grinding drum 10. Therefore, the instant rotation position of the polishing head end, the instant position of any displacement movement of the polishing head end, and the instant rotation position of the polishing drum 10 can be known. As a result, it is possible to predict the position of any part on the wafer and the relationship between any part on the wafer and any point on the wafer. This information is useful when looking for a measurement position 24 that is accurate within a few millimeters (measurement position 24, Figures 2 and 3). This is because the relative positions of the windows on the wafer 16 and the polishing drum 10 and the polishing pad 12 are known. When is the measurement position 24 of the wafer 16 on the window? You can also know __ · 6_ ^ 张 平面 _ Guan Jiapige (㈣χ㈣ 公 爱) 534854
悉。當晶圓1 6上的量測位置24在墊丨2上的時候，可經由 冒口 14取得晶圓16表面上的圖像，最好使用高解析度的數 位相機22。因爲一般研磨過程每秒有15至2〇〇轉，照相機 2 2必/員是同速照相機2 2。像這樣，在即時的情況下，對特 足的量測位置24取得圖像的時間是非常短的，也可使用顯 微鏡作爲頭端的光學收集系統。 、 爲了獲得一清楚之圖像，晶圓丨6上之量測位置2 4係由一 光源2 0照明。 較佳地，裝载光源20和光偵測器22至小χγ臺架18以微 周足可以裝載光源2 0和照相機2 〇至彼此和晶圓1 6之 間任何有利的相對位置。 使用的光波長可穿透研磨墊12上的窗口 14是重要的。再 者必7員考慮研磨漿體對光學行爲的影響。一般説來，最 好使用比較短的光波長，因爲比較短的光波長可以提供較 好的光解析度。然而，必須考慮到光波長度必須和窗口的 質料和使用在研磨漿體中的化學物質相容。 對預測會包含量測位置的晶圓丨6部分取得圖像後，分析 此圖像。在孩的分析中，將圖像送至有圖像識別軟體的電 腦去決定精準的量測位置。接著，分析適當的意欲像素。 像素的分析會提供例如反射率和顏色的資訊。在金屬研磨 的過程中，可用反射率找到端點。當反射率因金屬層的移 除而，變時，就獲致這樣的端點。氧化物或氮化物層的厚 度可藉著測定所分析的區域顏色而獲得。 本發明的各實施例中，有多處可作修改。例如，可同時 ·； 裝 訂Learned. When the measurement position 24 on the wafer 16 is on the pad 2, the image on the surface of the wafer 16 can be obtained through the feeder 14, and a high-resolution digital camera 22 is preferably used. Because the general grinding process has 15 to 200 revolutions per second, the camera 22 must be the same speed camera 22. As such, in an instant situation, the time required to acquire an image at a specific measurement position 24 is very short, and a microscope can also be used as the optical collection system at the head end. In order to obtain a clear image, the measurement positions 24 on the wafer 6 are illuminated by a light source 20. Preferably, the light source 20 and the light detector 22 to the small χγ stage 18 can be loaded with a micro-perimeter to load the light source 20 and the camera 20 to any favorable relative position between each other and the wafer 16. It is important that the wavelength of light used can penetrate the window 14 on the polishing pad 12. Furthermore, 7 members must consider the influence of the grinding slurry on the optical behavior. Generally speaking, it is best to use shorter wavelengths because shorter wavelengths provide better light resolution. However, it must be considered that the length of the light wave must be compatible with the material of the window and the chemicals used in the grinding slurry. After obtaining an image of the part of the wafer predicted to include the measurement position, analyze the image. In the analysis of the child, the image is sent to a computer with image recognition software to determine the precise measurement position. Next, the appropriate intended pixels are analyzed. Pixel analysis provides information such as reflectance and color. During metal grinding, the reflectivity can be used to find the end point. Such an end point is obtained when the reflectivity changes with the removal of the metal layer. The thickness of the oxide or nitride layer can be obtained by measuring the color of the analyzed area. In the embodiments of the present invention, there are various modifications that can be made. For example, you can simultaneously;
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534854 A7 ____B7 五、發明説明（5 ) 量測晶圓上許多個點，這方面只受限於電腦的速度和視訊 掏取的速度。 圖2係示意地顯示將被研磨的晶圓1 6之典型表面。區域 26，28，30，32 ’ 34表示晶圓16上不同的電路特性。數 字24標明了 一個在研磨中將被分析的量測位置。經由研磨 墊12的窗口 14取得圖像後，用圖像識別軟體去分析這張寬 視野的圖像。 圖3係顯示一個量測位置24的放大視圖。依照圖像識別 軟體的訊息基礎，可獲致微細的平面圖。同時可記錄在定 我區域内思欲像素的資訊’例如顏色和強度。對記錄下來 的資訊可做適當的處理，包括分析光譜、顏色改變率、顏 色本身、強度等。 '' 於是，當過程在執行時，提供了方法和裝置以量測晶圓 上可度量的量測位置上任何的特定點。藉著即時量測實際 上仍存在的膜厚度或是特定結構的反射率。而且，請注咅 的疋此裝置可以提供先前和後續的研磨量測。 圖4係顯示方法1〇〇，用以量測物件（例如，晶圓}幻表面 (例如，厚度）的研磨情況之流程圖。 方法100包括了在表面上選擇11〇量測位置24之所在；在 量測位置24内取得圖像120 ;以及分析13〇圖像以測定 的研磨情形。 較佳地，選擇步驟110包含了定位112將被研磨的表面. =入114物件於研磨頭端；以及監視116研磨頭端的相對位 -8 -534854 A7 ____B7 V. Description of the Invention (5) Measuring many points on the wafer, this aspect is limited only by the speed of the computer and the speed of video extraction. FIG. 2 schematically shows a typical surface of a wafer 16 to be polished. The regions 26, 28, 30, 32 '34 indicate different circuit characteristics on the wafer 16. The number 24 indicates a measurement location to be analyzed during grinding. After acquiring the image through the window 14 of the polishing pad 12, the wide-field image is analyzed using image recognition software. FIG. 3 shows an enlarged view of a measurement position 24. According to the information base of the image recognition software, a fine floor plan can be obtained. At the same time, information such as color and intensity of desired pixels in a fixed area can be recorded. The recorded information can be appropriately processed, including analysis of spectrum, color change rate, color itself, intensity, etc. '' Thus, while the process is in progress, methods and devices are provided to measure any specific point on a wafer at a measurable measurement location. By real-time measurement of the actual film thickness or reflectance of a specific structure. Also, please note that this device can provide previous and subsequent grinding measurements. Figure 4 shows a flowchart of method 100 for measuring the grinding of an object (eg, wafer) on a magic surface (eg, thickness). Method 100 includes selecting 11 measurement locations 24 on the surface. ; Obtain an image 120 in the measurement position 24; and analyze the 13 image to determine the grinding situation. Preferably, the selection step 110 includes positioning 112 the surface to be ground. = 114 objects at the grinding head end; And monitor the relative position of 116 grinding heads-8-
五、發明説明（6 件=二’二得圖像12°的步驟包含了在研磨滾筒1。上提 供122冒口 1 4 (圖1的由& 土^、 時取得⑵數位圖像。央^刀）；經由窗口14照明124 ;同 人=地® :析130步驟包含了使用圖像識別軟體(技藝爲 134意欲的像素。 思奴的像素；以及分析 r主Π刀析130的步驟包含了測定136反射率作爲研磨 況，或是視情沉測定138顏色(例如，晶圓的)作爲研磨； r競:丰万法100更包含了以下步驟：旋轉物件；以及於 得圖像。視需要地，旋轉研磨滾筒10,同時V. Description of the invention (6 pieces = 2 '2 to get the image 12 ° The step includes providing a 122 riser 1 4 on the grinding drum 1. (Figure 1 is obtained from & soil ^, when the digital image is obtained. ^ Knife); lighting 124 through window 14; fan = ground®: analysis of 130 steps includes the use of image recognition software (technical pixels of 134 intended. Sinu's pixels; and analysis of r master knife analysis 130 steps include Determine the reflectance of 136 as the polishing condition, or measure the color of 138 (eg, of the wafer) as the polishing according to the condition; r: The Fengwan method 100 further includes the following steps: rotating the object; and obtaining an image. As required Ground, rotating the grinding drum 10 while
疋來问時同步取得圖像。旋轉可以合併，使得方、去中 =要包含旋轉物件和研磨滚筒，同時於旋轉U 旋轉位^監最好包含監視研磨頭端的即時 磨滾筒的即時旋轉位^'Γ的即時位移位置；同時’監視研 雖然本發明已用特殊的結構、裝置和方法描 將了解到，這裏所描述到的不僅止受限：： 二。於疋’本發明的範圍是由以下的申請專利範園所$ 本紙張尺歧财(CNS) -9- 534854 A7 B7 五、發明説明（7疋 Come and ask for images synchronously. The rotations can be combined so that the square and the center = include the rotating object and the grinding drum, while rotating at the U rotation position ^ The monitor preferably includes the instant rotation position of the real-time grinding roller monitoring the grinding head end ^ 'Γ's instant displacement position; at the same time' Surveillance research Although the present invention has been described using special structures, devices, and methods, what is described here is not only limited: Yu 疋 ’The scope of the present invention is covered by the following patent application parks: Paper ruler (CNS) -9- 534854 A7 B7 V. Description of the invention (7
SC0147WD 圖4 方法100 110選擇位置 112表面定位 114載入物件 116監視相對位置 120取得圖像 122提供窗口 124照亮表面 125取得數位圖像 130分析圖像 132測定像素 134分析像素 136測定反射率 138測定顏色 140旋轉物件/滾筒 -10-本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)SC0147WD Figure 4 Method 100 110 Select position 112 Surface positioning 114 Load object 116 Monitor relative position 120 Get image 122 Provide window 124 Illuminate surface 125 Get digital image 130 Analyze image 132 Measure pixel 134 Analyze pixel 136 Measure reflectance 138 Measuring color 140 rotating object / roller-10- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm)