JP2014229905A - 不揮発性メモリ半導体デバイスおよびその製造方法 - Google Patents

不揮発性メモリ半導体デバイスおよびその製造方法 Download PDF

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Publication number
JP2014229905A
JP2014229905A JP2014103455A JP2014103455A JP2014229905A JP 2014229905 A JP2014229905 A JP 2014229905A JP 2014103455 A JP2014103455 A JP 2014103455A JP 2014103455 A JP2014103455 A JP 2014103455A JP 2014229905 A JP2014229905 A JP 2014229905A
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Japan
Prior art keywords
layer
interface
interface layer
dielectric
igd
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JP2014103455A
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English (en)
Japanese (ja)
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JP2014229905A5 (https=
Inventor
フディット・グロリア・リソニ・レイエス
Judit Gloria Lisoni Reyes
ローラン・ブルイユ
Breuil Laurent
ピーテル・ブロム
Blomme Pieter
ヤン・ファン・ハウト
Van Houdt Jan
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of JP2014229905A publication Critical patent/JP2014229905A/ja
Publication of JP2014229905A5 publication Critical patent/JP2014229905A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2014103455A 2013-05-24 2014-05-19 不揮発性メモリ半導体デバイスおよびその製造方法 Pending JP2014229905A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP13169160.2 2013-05-24
EP13169160 2013-05-24
EP13186665.9 2013-09-30
EP13186665.9A EP2806452B1 (en) 2013-05-24 2013-09-30 Non-volatile memory semiconductor devices and method for making thereof

Publications (2)

Publication Number Publication Date
JP2014229905A true JP2014229905A (ja) 2014-12-08
JP2014229905A5 JP2014229905A5 (https=) 2017-06-29

Family

ID=49263096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014103455A Pending JP2014229905A (ja) 2013-05-24 2014-05-19 不揮発性メモリ半導体デバイスおよびその製造方法

Country Status (4)

Country Link
US (1) US9362296B2 (https=)
EP (1) EP2806452B1 (https=)
JP (1) JP2014229905A (https=)
KR (1) KR20140138083A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190206691A1 (en) * 2018-01-04 2019-07-04 Applied Materials, Inc. High-k gate insulator for a thin-film transistor
TWI707343B (zh) * 2019-07-11 2020-10-11 力晶積成電子製造股份有限公司 Nand快閃記憶體的寫入方法
KR102733324B1 (ko) * 2019-08-30 2024-11-25 에스케이하이닉스 주식회사 캐패시터 및 그 제조 방법
CN114220865A (zh) * 2021-12-13 2022-03-22 深圳市华星光电半导体显示技术有限公司 薄膜晶体管及其制作方法、显示面板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617639B1 (en) * 2002-06-21 2003-09-09 Advanced Micro Devices, Inc. Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling
JP2007134681A (ja) * 2005-10-14 2007-05-31 Toshiba Corp 不揮発性半導体記憶装置
JP2009081316A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 不揮発性半導体記憶装置
JP2010045395A (ja) * 2009-11-16 2010-02-25 Toshiba Corp 不揮発性半導体記憶装置
US20100176432A1 (en) * 2009-01-09 2010-07-15 Ramaswamy D V Nirmal Memory Cells, Methods Of Forming Dielectric Materials, And Methods Of Forming Memory Cells
JP2011040733A (ja) * 2009-08-12 2011-02-24 Imec 不揮発性メモリセルのフローティングゲート形成方法
JP2012505546A (ja) * 2008-10-08 2012-03-01 ナノシス・インク． 電子素子の電子ブロック層

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1903602A3 (en) 2005-07-28 2009-04-01 Interuniversitair Microelektronica Centrum Vzw Non-volatile memory transistor
JP4575320B2 (ja) 2006-03-15 2010-11-04 株式会社東芝 不揮発性半導体記憶装置
EP2068351A1 (en) 2007-12-03 2009-06-10 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Floating gate non-volatile memory device and method for manufacturing same
US7989289B2 (en) 2008-05-13 2011-08-02 Intel Corporation Floating gate structures
KR20100000652A (ko) * 2008-06-25 2010-01-06 삼성전자주식회사 비휘발성 메모리 소자, 이를 포함하는 메모리 카드 및시스템
KR20110048614A (ko) * 2009-11-03 2011-05-12 삼성전자주식회사 게이트 구조물 및 그 형성 방법
JP5823354B2 (ja) * 2012-06-20 2015-11-25 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US9064902B2 (en) * 2013-02-27 2015-06-23 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617639B1 (en) * 2002-06-21 2003-09-09 Advanced Micro Devices, Inc. Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling
JP2007134681A (ja) * 2005-10-14 2007-05-31 Toshiba Corp 不揮発性半導体記憶装置
JP2009081316A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 不揮発性半導体記憶装置
JP2012505546A (ja) * 2008-10-08 2012-03-01 ナノシス・インク． 電子素子の電子ブロック層
US20100176432A1 (en) * 2009-01-09 2010-07-15 Ramaswamy D V Nirmal Memory Cells, Methods Of Forming Dielectric Materials, And Methods Of Forming Memory Cells
JP2011040733A (ja) * 2009-08-12 2011-02-24 Imec 不揮発性メモリセルのフローティングゲート形成方法
JP2010045395A (ja) * 2009-11-16 2010-02-25 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US20140346582A1 (en) 2014-11-27
KR20140138083A (ko) 2014-12-03
EP2806452B1 (en) 2018-12-26
US9362296B2 (en) 2016-06-07
EP2806452A1 (en) 2014-11-26

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