KR20140138083A - 비휘발성 메모리 반도체 소자 및 그 제조방법 - Google Patents

비휘발성 메모리 반도체 소자 및 그 제조방법 Download PDF

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Publication number
KR20140138083A
KR20140138083A KR1020140062560A KR20140062560A KR20140138083A KR 20140138083 A KR20140138083 A KR 20140138083A KR 1020140062560 A KR1020140062560 A KR 1020140062560A KR 20140062560 A KR20140062560 A KR 20140062560A KR 20140138083 A KR20140138083 A KR 20140138083A
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KR
South Korea
Prior art keywords
layer
interface
igd
dielectric
interface layer
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Withdrawn
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KR1020140062560A
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English (en)
Korean (ko)
Inventor
주디트 레이예스 (글로리아) 리소니
로뢍 브뢰유
피터 블롬
얀 반하우트
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아이엠이씨
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Publication of KR20140138083A publication Critical patent/KR20140138083A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020140062560A 2013-05-24 2014-05-23 비휘발성 메모리 반도체 소자 및 그 제조방법 Withdrawn KR20140138083A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP13169160.2 2013-05-24
EP13169160 2013-05-24
EP13186665.9 2013-09-30
EP13186665.9A EP2806452B1 (en) 2013-05-24 2013-09-30 Non-volatile memory semiconductor devices and method for making thereof

Publications (1)

Publication Number Publication Date
KR20140138083A true KR20140138083A (ko) 2014-12-03

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ID=49263096

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140062560A Withdrawn KR20140138083A (ko) 2013-05-24 2014-05-23 비휘발성 메모리 반도체 소자 및 그 제조방법

Country Status (4)

Country Link
US (1) US9362296B2 (https=)
EP (1) EP2806452B1 (https=)
JP (1) JP2014229905A (https=)
KR (1) KR20140138083A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190206691A1 (en) * 2018-01-04 2019-07-04 Applied Materials, Inc. High-k gate insulator for a thin-film transistor
TWI707343B (zh) * 2019-07-11 2020-10-11 力晶積成電子製造股份有限公司 Nand快閃記憶體的寫入方法
KR102733324B1 (ko) * 2019-08-30 2024-11-25 에스케이하이닉스 주식회사 캐패시터 및 그 제조 방법
CN114220865A (zh) * 2021-12-13 2022-03-22 深圳市华星光电半导体显示技术有限公司 薄膜晶体管及其制作方法、显示面板

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617639B1 (en) * 2002-06-21 2003-09-09 Advanced Micro Devices, Inc. Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling
EP1903602A3 (en) 2005-07-28 2009-04-01 Interuniversitair Microelektronica Centrum Vzw Non-volatile memory transistor
JP4928890B2 (ja) * 2005-10-14 2012-05-09 株式会社東芝 不揮発性半導体記憶装置
JP4575320B2 (ja) 2006-03-15 2010-11-04 株式会社東芝 不揮発性半導体記憶装置
US8686490B2 (en) * 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
JP4594973B2 (ja) * 2007-09-26 2010-12-08 株式会社東芝 不揮発性半導体記憶装置
EP2068351A1 (en) 2007-12-03 2009-06-10 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Floating gate non-volatile memory device and method for manufacturing same
US7989289B2 (en) 2008-05-13 2011-08-02 Intel Corporation Floating gate structures
KR20100000652A (ko) * 2008-06-25 2010-01-06 삼성전자주식회사 비휘발성 메모리 소자, 이를 포함하는 메모리 카드 및시스템
US7968406B2 (en) * 2009-01-09 2011-06-28 Micron Technology, Inc. Memory cells, methods of forming dielectric materials, and methods of forming memory cells
EP2284870B1 (en) * 2009-08-12 2012-02-22 Imec Method for forming a floating gate non-volatile memory cell
KR20110048614A (ko) * 2009-11-03 2011-05-12 삼성전자주식회사 게이트 구조물 및 그 형성 방법
JP5150606B2 (ja) * 2009-11-16 2013-02-20 株式会社東芝 不揮発性半導体記憶装置
JP5823354B2 (ja) * 2012-06-20 2015-11-25 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US9064902B2 (en) * 2013-02-27 2015-06-23 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing same

Also Published As

Publication number Publication date
US20140346582A1 (en) 2014-11-27
EP2806452B1 (en) 2018-12-26
JP2014229905A (ja) 2014-12-08
US9362296B2 (en) 2016-06-07
EP2806452A1 (en) 2014-11-26

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20140523

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid