JP2014218750A - Vapor deposition mask, vapor deposition mask preparation body, and manufacturing method for organic semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition mask that is both higher in precision and lightweight even when made large-sized and can form a high-precision vapor deposition pattern while maintaining strength, a vapor deposition mask manufacturing method and a vapor deposition mask preparation body such that the vapor deposition mask can be easily manufactured, and a manufacturing method for organic semiconductor element in which a high-precision organic semiconductor element can be manufactured.SOLUTION: A metal mask 10 provided with a plurality of slits 15 and a resin mask 20 are stacked, and the resin mask 20 is provided with opening parts 25 needed for constituting a plurality of screens. The opening parts 25 correspond to a pattern to be manufactured by vapor deposition, and each slit 15 is provided at a position where the slit overlaps at least one entire screen.

Description

  The present invention relates to a deposition mask, a deposition mask preparation, and a method for manufacturing an organic semiconductor element.

  Conventionally, in the manufacture of an organic EL element, the organic layer or cathode electrode of the organic EL element is formed of, for example, a metal in which a large number of minute slits are arranged in parallel at minute intervals in a region to be deposited. A vapor deposition mask was used. When using this vapor deposition mask, the vapor deposition mask is placed on the surface of the substrate to be vapor-deposited and held by a magnet from the back side, but the rigidity of the slit is extremely small, so when holding the vapor deposition mask on the substrate surface In this case, the slits are easily distorted, which has been an obstacle to the increase in the size of products with high definition or a long slit length.

  Various studies have been made on the vapor deposition mask for preventing the distortion of the slit. For example, Patent Document 1 covers a base plate that also serves as a first metal mask having a plurality of openings, and covers the openings. There has been proposed a vapor deposition mask having a second metal mask having a large number of fine slits in the region and a mask tension holding means for positioning the second metal mask on the base plate in a state where the second metal mask is pulled in the longitudinal direction of the slit. That is, a vapor deposition mask in which two kinds of metal masks are combined has been proposed. According to this vapor deposition mask, it is said that the slit accuracy can be ensured without causing distortion in the slit.

  Recently, with the increase in size of products using organic EL elements or the increase in substrate size, there is an increasing demand for deposition masks, which are used in the manufacture of deposition masks made of metal. Metal plates are also getting bigger. However, with the current metal processing technology, it is difficult to accurately form a slit in a large metal plate, and even if the slit portion can be prevented from being distorted by the method proposed in Patent Document 1 above, Cannot cope with high definition of slits. Further, in the case of a vapor deposition mask made of only metal, the mass increases with an increase in size, and the total mass including the frame also increases, resulting in trouble in handling.

  In the vapor deposition mask proposed above, in order to reduce the weight of the vapor deposition mask, it is necessary to reduce the thickness of the vapor deposition mask made of metal. However, if the thickness of the vapor deposition mask made of metal is reduced, the strength of the vapor deposition mask will decrease, and the vapor deposition mask may be deformed or may be difficult to handle. Problems will arise.

JP 2003-332057 A

  The present invention has been made in view of such a situation, and even when the size is increased, both high definition and light weight can be satisfied, and formation of a high-definition deposition pattern while maintaining strength is achieved. To provide a vapor deposition mask capable of being manufactured, to provide a vapor deposition mask manufacturing method and a vapor deposition mask preparation capable of easily producing this vapor deposition mask, and to produce an organic semiconductor element with high accuracy An object of the present invention is to provide a method for manufacturing an organic semiconductor element that can be used.

  The present invention for solving the above problems is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, wherein a metal mask provided with a plurality of slits and a resin mask are laminated, and the resin mask Are provided with openings necessary for constituting a plurality of screens, the openings correspond to patterns to be deposited, and each slit is provided at a position overlapping at least one entire screen. It is characterized by that.

  Further, the present invention for solving the above problems is a vapor deposition mask, in which a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to a pattern to be produced by vapor deposition are laminated. In addition, all of the plurality of openings are provided at positions overlapping the one through hole.

  In addition, the present invention for solving the above-described problem is that a metal mask provided with a plurality of slits and a resin mask are laminated, and the resin mask is provided with openings necessary for configuring a plurality of screens. The opening corresponds to a pattern for vapor deposition, and the vapor deposition mask preparation for obtaining a vapor deposition mask in which each slit is provided at a position overlapping at least one entire screen, on one surface of the resin plate A metal mask provided with slits is laminated, and each of the slits is provided at a position overlapping with the entire opening constituting one screen finally provided on the resin plate.

  In addition, the present invention for solving the above-described problem is a laminate of a metal mask provided with one through-hole and a resin mask provided with a plurality of openings corresponding to a pattern to be vapor-deposited. In a vapor deposition mask preparing body for obtaining a vapor deposition mask provided at a position where all of the portions overlap with the one through hole, a metal mask having a slit provided on one surface of the resin plate is laminated. The one through hole is provided at a position overlapping the entire opening finally provided in the resin plate.

  Moreover, this invention for solving the said subject is a manufacturing method of a vapor deposition mask, Comprising: The process of preparing the metal mask with a resin plate by which the metal mask provided with the some slit and the resin plate were laminated | stacked, A resin mask forming step of forming a plurality of screens on the resin plate by irradiating a laser from the metal mask side, wherein the metal mask includes a plurality of screens. A metal mask having a slit provided at a position overlapping at least one entire screen is used.

  Moreover, this invention for solving the said subject is a manufacturing method of a vapor deposition mask, Comprising: The process of preparing the metal mask with the resin board on which the metal mask provided with one through-hole and the resin board were laminated | stacked And a resin mask forming step of irradiating a laser from the metal mask side and forming a plurality of openings at positions overlapping with the one through hole of the resin plate.

  In the above manufacturing method, the resin mask forming step may be performed after fixing the metal mask with a resin plate on a frame.

  In addition, the present invention for solving the above-described problem is a method for manufacturing an organic semiconductor element, including a step of forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask with a frame in which the vapor deposition mask is fixed to the frame. In the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame is formed by laminating a metal mask having a plurality of slits and a resin mask, and the resin mask forms a plurality of screens. An opening necessary for the above is provided, and each of the slits is a deposition mask provided at a position overlapping with at least one entire screen.

  In addition, the present invention for solving the above-described problem is a method for manufacturing an organic semiconductor element, including a step of forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask with a frame in which the vapor deposition mask is fixed to the frame. In the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame includes a metal mask provided with one through hole, and a resin mask provided with a plurality of openings corresponding to the pattern to be vapor deposited. Are stacked, and all of the plurality of openings are vapor deposition masks provided at positions overlapping with the one through-hole.

  According to the vapor deposition mask of the present invention, both high definition and light weight can be satisfied even when the size is increased, and a high definition vapor deposition pattern can be formed while maintaining the strength of the entire vapor deposition mask. Become. Moreover, according to the vapor deposition mask preparation of this invention and the manufacturing method of a vapor deposition mask, the vapor deposition mask of the said characteristic can be manufactured simply. Moreover, according to the manufacturing method of the organic semiconductor element of this invention, an organic semiconductor element can be manufactured with sufficient precision.

It is the front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is a partial expanded sectional view of the vapor deposition mask shown in FIG. It is the front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is the front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is the front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is a partial expanded sectional view of the vapor deposition mask of embodiment (A). It is the front view which looked at the vapor deposition mask of embodiment (A) from the resin mask side. It is a schematic sectional drawing which shows the relationship between a shadow and the thickness of a metal mask. It is the front view which looked at the vapor deposition mask of embodiment (A) from the metal mask side. It is process drawing for demonstrating the example of the manufacturing method of the vapor deposition mask of embodiment (A). Note that (a) to (c) are all cross-sectional views. It is the front view which looked at the vapor deposition mask of embodiment (B) from the metal mask side. It is a partial expanded sectional view of the vapor deposition mask shown in FIG. It is the front view which looked at the vapor deposition mask of embodiment (B) from the metal mask side. It is a partial expanded sectional view of the vapor deposition mask shown in FIG. It is the front view which looked at the vapor deposition mask of embodiment (B) from the metal mask side. It is a partial expanded sectional view of the vapor deposition mask of embodiment (B). It is a schematic sectional drawing which shows the relationship between a shadow and the thickness of a metal mask. It is the front view which looked at the vapor deposition mask of embodiment (B) from the metal mask side. It is process drawing for demonstrating the example of the manufacturing method of the vapor deposition mask of embodiment (B). In addition, (a)-(c) is sectional drawing. It is the front view which looked at the vapor deposition mask with a frame of one embodiment from the resin mask side. It is the front view which looked at the vapor deposition mask with a frame of one embodiment from the resin mask side.

  Below, the vapor deposition mask 100 of one Embodiment of this invention is divided into Embodiment (A) and Embodiment (B), and is concretely demonstrated using drawing.

<Deposition mask of embodiment (A)>
As shown in FIGS. 1 to 7 and 9, the vapor deposition mask 100 of the embodiment (A) is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, and is provided with a plurality of slits 15. The metal mask 10 and the resin mask 20 are laminated, and the resin mask 20 is provided with openings 25 necessary to form a plurality of screens, and each slit 15 is provided at a position overlapping at least one entire screen. It is characterized by. 1, FIG. 3 to FIG. 5 and FIG. 9 are front views of the vapor deposition mask of the embodiment (A) as viewed from the metal mask side, and FIG. 2 and FIG. 6 are portions of the vapor deposition mask shown in FIG. It is an expansion schematic sectional drawing.

  The vapor deposition mask 100 of the embodiment (A) is a vapor deposition mask used for simultaneously forming vapor deposition patterns for a plurality of screens, and the vapor deposition patterns corresponding to a plurality of products are simultaneously formed with one vapor deposition mask 100. Can do. The “opening” in the specification of the present application means a pattern to be produced using the vapor deposition mask of the embodiment (A) and the embodiment (B). For example, the vapor deposition mask is formed in an organic EL display. When used for forming a layer, the shape of the opening 25 is the shape of the organic layer. In the vapor deposition mask 100 of embodiment (A) and embodiment (B), the vapor deposition material discharge | released from the vapor deposition source passes the opening part 25, and the vapor deposition pattern corresponding to the opening part 25 is formed in a vapor deposition target object. Is done. In addition, “one screen” includes an assembly of openings 25 corresponding to one product. When the one product is an organic EL display, it is necessary to form one organic EL display. An aggregate of organic layers, that is, an aggregate of openings 25 serving as an organic layer is “one screen”. In the vapor deposition mask 100 of the embodiment (A), in order to simultaneously form vapor deposition patterns for a plurality of screens, the “one screen” is arranged on the resin mask 20 for a plurality of screens at predetermined intervals. Yes. That is, the resin mask 20 is provided with openings 25 necessary for forming a plurality of screens.

  In the vapor deposition mask of embodiment (A), the metal mask 10 provided with a plurality of slits 15 is laminated on one surface of the resin mask, and each slit of the metal mask 10 overlaps at least one entire screen. It is characterized by being provided. In other words, the length of the slit 15 is the same as that of the metal mask 10 between the openings 25 necessary for constituting one screen and between the openings 25 adjacent in the horizontal direction. There is no metal line portion having a thickness or the same length as the horizontal length of the slit 15 between the opening portions adjacent to each other in the vertical direction and having the same thickness as the metal mask 10. It is characterized by. Hereinafter, the same length as the length of the slit 15 in the vertical direction and the same thickness as the metal mask 10 or the length of the slit 15 in the horizontal direction and the same length as the metal mask 10 Metal wire portions having a thickness may be collectively referred to simply as metal portions.

  According to the vapor deposition mask 100 of the embodiment (A), when the size of the opening 25 necessary to configure one screen or the pitch between the openings 25 configuring one screen is narrowed, for example, exceeds 400 ppi. Even when the size of the openings 25 and the pitch between the openings 25 are extremely small in order to form a screen, interference by the metal portion can be prevented, and high-definition images can be formed. It becomes possible. When one screen is divided by a plurality of slits, in other words, when a metal line portion is present between the openings 25 constituting one screen, the openings 25 constituting one screen. As the pitch between them becomes narrower, it is necessary to thin the metal portion existing between the openings 25. However, when the metal part existing between the openings 25 constituting one screen is thinned, the frequency of the metal part breaking increases, and the broken metal part may adversely affect the deposition. .

  In addition, when a metal part exists between the openings 25 constituting one screen, the metal part causes a shadow and it is difficult to form a high-definition screen. Note that the shadow is thinner than the target deposition film thickness because a part of the deposition material released from the deposition source collides with the inner wall surface of the slit 15 of the metal mask 10 and does not reach the deposition target. This refers to a phenomenon in which an undeposited portion having a film thickness occurs. In particular, as the shape of the opening 25 is miniaturized, the influence of the shadow caused by the metal portion existing between the openings 25 in one screen increases. That is, in the vapor deposition mask of the embodiment (A), the slits are provided at positions that overlap at least the entire screen, that is, the metal portion is not present between the openings 25 constituting the single screen, thereby improving the durability of the vapor deposition mask. This is to prevent the influence of shadows.

  Moreover, according to the vapor deposition mask 100 of embodiment (A), weight reduction can be achieved compared with the conventional vapor deposition mask. Specifically, when comparing the mass of the vapor deposition mask 100 of the embodiment (A) with the mass of the vapor deposition mask composed of a conventionally known metal alone, assuming that the thickness of the entire vapor deposition mask is the same, The mass of the vapor deposition mask 100 of the embodiment (A) is lightened by the amount of replacing a part of the metal material of the conventionally known vapor deposition mask with a resin material. In addition, in order to reduce the weight by using a vapor deposition mask made of only metal, it is necessary to reduce the thickness of the vapor deposition mask. However, if the vapor deposition mask is thin, When the size is increased, the vapor deposition mask may be distorted or the durability may be reduced. On the other hand, according to the vapor deposition mask of the embodiment (A), even when the thickness of the entire vapor deposition mask is increased in order to satisfy distortion and durability when it is enlarged, the resin mask 20 By being present, the weight can be reduced as compared with a vapor deposition mask formed of only metal. Each will be described in detail below. The same applies to the vapor deposition mask of the embodiment (B) described later.

(Resin mask forming vapor deposition mask of embodiment (A))
For the resin mask 20 forming the vapor deposition mask of the embodiment (A), a conventionally known resin material can be appropriately selected and used. Although the material is not particularly limited, the formation of the high-definition opening 25 by laser processing or the like. It is preferable to use a lightweight material that has a small dimensional change rate and moisture absorption rate over time and with heat. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene- Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, and ionomer resin. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both conditions is particularly preferable. . By using this resin material as a resin mask, the dimensional accuracy of the opening 25 can be improved, and the dimensional change rate and moisture absorption rate over time can be reduced. In the vapor deposition mask of the embodiment (A), the resin mask 20 is made of a resin material capable of forming the high-definition opening 25 as compared with the metal material as described above. Therefore, the vapor deposition mask 100 having the high-definition opening 25 can be obtained. The same applies to the vapor deposition mask of the embodiment (B).

  There is no particular limitation on the thickness of the resin mask 20, but when vapor deposition is performed using the vapor deposition mask 100 of the embodiment (A), a vapor deposition portion that is thinner than a target vapor deposition film thickness, a so-called shadow. In order to prevent this from occurring, the resin mask 20 is preferably as thin as possible. However, when the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation and the like increases. On the other hand, if it exceeds 25 μm, shadows may occur. Considering this point, the thickness of the resin mask 20 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin mask 20 within this range, it is possible to reduce the risk of defects such as pinholes and deformation, and to effectively prevent the generation of shadows. In particular, by setting the thickness of the resin mask 20 to 3 μm or more and 10 μm or less, more preferably 4 μm or more and 8 μm or less, it is possible to more effectively prevent the influence of shadows when forming a high-definition pattern exceeding 400 ppi. . In the vapor deposition mask of the embodiment (A), even if the thickness of the resin mask 20 is reduced to the above preferable range, the vapor deposition mask is present due to the presence of the metal mask 10 provided on the resin mask 20. The durability and handling properties of the entire 100 can be satisfied. The same applies to the vapor deposition mask of the embodiment (B).

  In addition, in the vapor deposition mask 100 of embodiment (A), although the metal mask 10 and the resin mask 20 may be joined directly and may be joined via the adhesive layer, an adhesive layer In the case where the metal mask 10 and the resin mask 20 are bonded via the metal, the total thickness of the resin mask 20 and the pressure-sensitive adhesive layer is 3 μm or more and 25 μm or less, preferably 3 μm or more in consideration of the shadow point. The thickness is preferably set to 10 μm, particularly preferably in the range of 4 μm to 8 μm. The same applies to the vapor deposition mask of the embodiment (B).

  In addition, since the vapor deposition mask 100 of the embodiment (A) has a configuration in which the resin mask 20 and the metal mask 10 are laminated, the presence of the metal mask 10 improves the durability of the vapor deposition mask as a whole. Thereby, handling performance, breakage, and prevention of deformation are achieved. The same applies to the vapor deposition mask of the embodiment (B).

  Next, an example of the opening 25 constituting one screen will be described with reference to FIGS. 1 and 3 to 6. In the form shown in the figure, a region closed by a broken line is one screen. In the illustrated form, for convenience of description, a small number of openings 25 are aggregated as one screen. However, the present invention is not limited to this form. For example, when one opening 25 is defined as one pixel, one screen There may be an opening 25 of several million pixels.

  In the form shown in FIG. 1, one screen is constituted by an aggregate of openings 25 in which a plurality of openings 25 are provided in the vertical direction and the horizontal direction. In the form shown in FIG. 3, one screen is constituted by an aggregate of openings 25 in which a plurality of openings 25 are provided in the horizontal direction. In the form shown in FIG. 4, one screen is constituted by an aggregate of openings 25 in which a plurality of openings 25 are provided in the vertical direction. 1, 3, and 4, slits 15 are provided at positions that overlap the entire screen.

  As described above, the slit 15 of the metal mask 10 may be provided at a position overlapping only one screen. As shown in FIGS. 5A and 5B, the slit 15 has 2 You may provide in the position which overlaps with the above whole screen. 5A, in the resin mask shown in FIG. 1, a slit 15 is provided at a position overlapping the entire two screens that are continuous in the horizontal direction. In FIG. 5B, the slit 15 is provided at a position overlapping the entire three screens that are continuous in the vertical direction. In the case where the entire plurality of screens overlap with one slit, the proportion of the metal portion provided on the resin mask decreases as the proportion of the region occupied by the slit 15 increases with respect to the entire surface of the metal mask 10. The durability of the entire 100 tends to decrease. Therefore, when the entire plurality of screens are overlapped with one slit, it is necessary to appropriately set in consideration of the durability of the vapor deposition mask 100 as a whole.

Next, taking the form shown in FIG. 1 as an example, the pitch between the openings 25 constituting one screen and the pitch between the screens will be described. There is no particular limitation on the pitch between the openings 25 constituting one screen and the size of the openings 25, and they can be set as appropriate according to the pattern to be deposited. For example, when forming a high-definition deposition pattern of 400 ppi, the horizontal pitch (P1) and vertical pitch (P2) of the adjacent openings 25 in the openings 25 constituting one screen are about 60 μm. It becomes. The size of the opening becomes 500μm ² ~1000μm ² about. In addition, one opening 25 is not limited to corresponding to one pixel. For example, depending on the pixel arrangement, a plurality of pixels can be integrated into one opening 25.

  The horizontal pitch (P3) and the vertical pitch (P4) between the screens are not particularly limited. However, as shown in FIG. 1, when one slit 15 is provided at a position overlapping the entire screen. Will have a metal part between each screen. Accordingly, the horizontal pitch (P3) and the vertical pitch (P4) between the screens are the horizontal pitch (P1) and the vertical pitch (P2) of the openings 25 provided in one screen. If it is smaller than or substantially equal, the metal portion existing between the screens is easily disconnected. Therefore, in consideration of this point, it is preferable that the pitch (P3, P4) between the screens is wider than the pitch (P1, P2) between the openings 25 constituting one screen. An example of the pitch (P3, P4) between the screens is about 1 mm to 100 mm. Note that the pitch between the screens means a pitch between adjacent openings in one screen and another screen adjacent to the one screen.

  As shown in FIG. 5, when one slit 15 is provided at a position overlapping with two or more entire screens, a metal portion is provided between the plurality of screens provided in one slit 15. Will not exist. Therefore, in this case, the pitch between two or more screens provided at a position overlapping with one slit 15 may be substantially equal to the pitch between the openings 25 constituting one screen.

  There is no particular limitation on the cross-sectional shape of the opening 25, and the end faces facing each other of the resin mask forming the opening 25 may be substantially parallel to each other. However, as shown in FIGS. It is preferable that the cross-sectional shape has a shape that expands toward the vapor deposition source. In other words, it is preferable to have a tapered surface that expands toward the metal mask 10 side. By setting the cross-sectional shape of the opening 25 to the configuration, it is possible to prevent a shadow from being generated in a pattern to be formed when vapor deposition is performed using the vapor deposition mask of the embodiment (A). The taper angle θ can be appropriately set in consideration of the thickness of the resin mask 20 and the like, but the straight line connecting the lower bottom tip in the opening portion of the resin mask and the upper bottom tip in the opening portion of the resin mask. The angle formed with the bottom surface of the resin mask 20, in other words, in the cross section in the thickness direction of the inner wall surface constituting the opening 25 of the resin mask 20, does not contact the inner wall surface of the opening 25 and the metal mask 10 of the resin mask 20. The angle (θ) formed with the side surface (in the illustrated form, the lower surface of the resin mask) is preferably in the range of 5 ° to 85 °, and more preferably in the range of 15 ° to 80 °. Preferably, it is in the range of 25 ° to 65 °. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable. Further, in FIGS. 2 and 6, the end face forming the opening 25 has a linear shape, but is not limited to this, and has an outwardly convex curved shape, that is, an opening. The entire shape of the portion 25 may be a bowl shape. The opening 25 having such a cross-sectional shape is, for example, a multi-stage laser that appropriately adjusts the laser irradiation position and laser irradiation energy when the opening 25 is formed, or changes the irradiation position in stages. It can be formed by irradiation. 2 and 6 are partially enlarged cross-sectional views showing an example of the vapor deposition mask 100 having the configuration shown in FIG. The same applies to the vapor deposition mask of the embodiment (B), and FIG. 2 and FIG. 6 may be read as FIG. 12 and FIG.

  Since a resin material is used for the resin mask 20, the opening 25 can be formed regardless of a processing method used in conventional metal processing, for example, a processing method such as an etching method or cutting. That is, the forming method of the opening 25 is not particularly limited, and the opening is made using various processing methods, for example, a laser processing method capable of forming the high-definition opening 25, precision press processing, photolithography processing, or the like. The portion 25 can be formed. A method of forming the opening 25 by a laser processing method or the like will be described later. The same applies to the vapor deposition mask of the embodiment (B).

  Etching methods include, for example, a wet etching method such as a spray etching method in which an etching material is sprayed from a spray nozzle at a predetermined spray pressure, an immersion etching method in an etching solution filled with the etching material, or a spin etching method in which an etching material is dropped. An etching method or a dry etching method using gas, plasma, or the like can be used. The same applies to the vapor deposition mask of the embodiment (B).

  In the vapor deposition mask of the embodiment (A), the resin mask 20 is used as the configuration of the vapor deposition mask 100. Therefore, when the vapor deposition is performed using the vapor deposition mask 100, the opening 25 of the resin mask 20 is formed in the opening mask 25. Extremely high heat is applied, and gas may be generated from the end face (see FIG. 6) forming the opening 25 of the resin mask 20, which may reduce the degree of vacuum in the vapor deposition apparatus. Therefore, considering this point, it is preferable that a barrier layer 26 is provided on the end surface of the resin mask 20 where the opening 25 is formed, as shown in FIG. By forming the barrier layer 26, it is possible to prevent gas from being generated from the end face where the opening 25 of the resin mask 20 is formed. The same applies to the vapor deposition mask of the embodiment (B), and FIG. 6 may be read as FIG.

  As the barrier layer 26, an inorganic oxide, an inorganic nitride, a metal thin film layer, or a vapor deposition layer can be used. As the inorganic oxide, an oxide of aluminum, silicon, indium, tin, or magnesium can be used, and as the metal, aluminum or the like can be used. The thickness of the barrier layer 26 is preferably about 0.05 μm to 1 μm. The same applies to the vapor deposition mask of the embodiment (B).

  Furthermore, the barrier layer 26 preferably covers the deposition source side surface of the resin mask 20 (not shown). The barrier property is further improved by covering the deposition source side surface of the resin mask 20 with the barrier layer 26. The barrier layer is preferably formed by various PVD (physical vapor deposition) methods or CVD (chemical vapor deposition) methods in the case of inorganic oxides and inorganic nitrides. In the case of a metal, it is preferably formed by various PVD methods such as sputtering, ion plating, and vacuum deposition, particularly by vacuum deposition. The surface on the vapor deposition source side of the resin mask 20 referred to here may be the entire surface on the vapor deposition source side of the resin mask 20, and is exposed from the metal mask on the surface on the vapor deposition source side of the resin mask 20. It may be only the part which is. The same applies to the vapor deposition mask of the embodiment (B).

  Moreover, when performing vapor deposition on a vapor deposition object using the vapor deposition mask of the embodiment (A), a magnet or the like is disposed behind the vapor deposition object, and the vapor deposition mask 100 in front of the vapor deposition object is attracted by a magnetic force. When the deposition mask (A) and the deposition target are in close contact with each other, it is preferable to provide a magnetic layer (not shown) made of a magnetic material on the surface of the resin mask 20 that is not in contact with the metal mask 10. . By providing the magnetic layer, the magnetic layer and the vapor deposition object can be attracted by magnetic force, and the vapor deposition mask of the embodiment (A) and the vapor deposition object can be sufficiently adhered to each other without any gap. Embodiment (A) It is possible to prevent the deposition pattern from becoming thick due to the gap between the deposition mask and the deposition object. Specifically, in the vapor deposition mask of the embodiment (A), the metal portion is not present between the openings 25 constituting one screen, and therefore the vapor deposition of the embodiment (A) is performed in a region corresponding to one screen. The mask 100 and the deposition object cannot be brought into close contact with each other. On the other hand, when the magnetic layer is provided, the vapor deposition mask 100 of the embodiment (A) and the vapor deposition object can be brought into close contact with each other even in the region where the magnetic layer is provided. By providing the magnetic layer on the area corresponding to the screen, the adhesion between the vapor deposition mask 100 of the embodiment (A) and the vapor deposition object can be improved. Vapor deposition pattern thickening refers to a phenomenon in which a vapor deposition pattern having a shape larger than the intended vapor deposition pattern is formed. In addition, when making the vapor deposition mask 100 of embodiment (A) and the vapor deposition target object adhere | attach using methods other than attracting | sucking with a magnetic force, it does not require especially providing a magnetic layer. The same applies to the vapor deposition mask of the embodiment (B).

  Examples of the material for the magnetic layer include iron, nickel, cobalt, and alloys containing these metals. The thickness of the magnetic layer is not particularly limited, but is preferably 0.05 μm or more and 1 μm or less. The same applies to the vapor deposition mask of the embodiment (B).

  FIG. 7 is a front view of another embodiment of the resin mask. As shown in FIG. 7, it is preferable that a groove 28 extending in the vertical direction or the horizontal direction (vertical direction in the case of FIG. 7) of the resin mask 20 is formed on the resin mask 20. When heat is applied at the time of vapor deposition, the resin mask 20 may thermally expand, which may cause a change in the size and position of the opening 25. However, by forming the groove 28, the expansion of the resin mask is absorbed. It is possible to prevent the resin mask 20 from expanding in a predetermined direction as a whole and accumulating the thermal expansion occurring at various portions of the resin mask and changing the size and position of the opening 25. The formation position of the groove 28 is not limited, and the groove 28 may be provided between the openings 25 constituting one screen or at a position overlapping the opening 25, but is preferably provided between the screens. Further, the groove may be provided only on one surface of the resin mask, for example, the surface in contact with the metal mask, or may be provided only on the surface not in contact with the metal mask. Alternatively, it may be provided on both surfaces of the resin mask 20.

  In FIG. 7, the groove 28 extending in the vertical direction is formed between adjacent screens. However, the present invention is not limited to this, and a groove extending in the horizontal direction may be formed between adjacent screens. Furthermore, it is possible to form the grooves in a combination of these.

  The depth and width of the groove 28 are not particularly limited. However, if the depth of the groove 28 is too deep or too wide, the rigidity of the resin mask 20 tends to decrease. It is necessary to set in consideration of Further, the cross-sectional shape of the groove is not particularly limited, and may be arbitrarily selected in consideration of a processing method such as a U shape or a V shape. The same applies to the vapor deposition mask of the embodiment (B).

(Metal mask forming vapor deposition mask of embodiment (A))
The metal mask 10 constituting the vapor deposition mask of the embodiment (A) is made of metal, and is provided with a plurality of slits 15. In the vapor deposition mask of the embodiment (A), as described above, each slit 15 is provided at a position overlapping with at least one entire screen. In other words, the opening 25 constituting one screen is provided at a position overlapping with one slit 15.

  Next, referring to FIG. 8A to FIG. 8C, the generation of shadows, the generation of shadows that may occur depending on the thickness of the metal mask 10, and a slit provided at a position that overlaps at least one entire screen. The superiority of the vapor deposition mask 100 of the form (A) will be described. 8A is a partially enlarged cross-sectional view of a vapor deposition mask in which an opening 25a constituting one screen is divided by a plurality of slits 15a. FIG. 8B is a cross-sectional view of FIG. In the vapor deposition mask shown in FIG. FIG. 8C is a partial enlarged cross-sectional view showing an example of the vapor deposition mask 100 of the embodiment (A) in which one slit 15 is provided at a position overlapping the entire screen, and FIG. FIG. 9 is a partially enlarged cross-sectional view showing a state in which the thickness of the metal mask 10 is increased in the vapor deposition mask 100 in FIG. Further, in the illustrated form, an aggregate of openings 25 provided with five openings in the horizontal direction (the vertical direction is arbitrary) is used as one screen.

  As shown in FIG. 8A, when the opening 25a constituting one screen is divided by a plurality of slits 15a, a metal portion that forms a wall surface of the slit 15a in a part of the adjacent opening 25a. Will exist. In the case where the pitch of the openings 25a or the shape of the openings 25a is miniaturized to form a high-definition deposition pattern, a metal portion exists between the openings 25a constituting one screen. In this case, the metal portion prevents the vapor deposition material released from the vapor deposition source from passing through the opening 25a, making it difficult to produce a high-definition vapor deposition pattern. Further, when the thickness of the metal mask 10a is reduced, the durability of the entire vapor deposition mask is also lowered. When the thickness of the metal mask 10a is increased as shown in FIG. 8B in order to improve the durability of the entire vapor deposition mask, the vapor deposition material released from the vapor deposition source is more contained in the metal portion. It becomes easy to collide with the wall surface. As the amount of the vapor deposition material that collides with the inner wall surface increases, the amount of the vapor deposition material that cannot reach the vapor deposition object increases, and the generation of shadows becomes more prominent. Further, when the pitch between the openings 25a is narrowed, it is necessary to thin the metal portions existing between the openings 25a, and the risk of disconnection of the metal portions increases. In addition, when a metal part is disconnected, durability of the whole vapor deposition mask falls.

  On the other hand, in the vapor deposition mask of the embodiment (A), as shown in FIG. 8C, the entire screen, that is, all the openings 25 provided in the screen overlap with one slit 15. Is provided. Therefore, as shown in FIG. 8C, the vapor deposition material can be passed through the opening 25 without waste, and the generation of shadows can be prevented. Further, as shown in FIG. 8D, even when the thickness of the metal mask 10 is increased to some extent, the influence of shadow is small, and a high-definition deposition pattern can be formed. In particular, in the vapor deposition mask of the embodiment (A), even when the thickness of the metal mask 10 is about 100 μm, the generation of shadows can be prevented. Since the durability of the vapor deposition mask 100 as a whole is improved by increasing the thickness of the metal mask 10, the vapor deposition mask of the embodiment (A) allows the formation of a high-definition vapor deposition pattern while reducing the thickness. The durability can be improved by appropriately setting.

  The thickness of the metal mask 10 is not particularly limited, but is preferably 100 μm or less and more preferably 50 μm or less in order to more effectively prevent the occurrence of shadows in the opening 25 located near the inner wall surface of the slit 15. More preferably, it is particularly preferably 35 μm or less. The same applies to the vapor deposition mask of the embodiment (B), and the slit 15 may be read as a through hole.

  In addition, in the vapor deposition mask 100 of the embodiment (A), in order to sufficiently prevent the occurrence of shadows, as shown in FIGS. 2 and 6, the cross-sectional shape of the slit 15 has a spread toward the vapor deposition source. Such a shape is preferable. With such a cross-sectional shape, even if the thickness of the entire deposition mask is increased for the purpose of preventing distortion that may occur in the deposition mask 100 or improving durability, it is emitted from the deposition source. The deposited material can reach the deposition target without colliding with the surface of the slit 15 or the inner wall surface of the slit 15. Specifically, the angle formed by the straight line connecting the lower bottom end of the slit 15 of the metal mask 10 and the upper bottom end of the slit 15 of the metal mask 10 and the bottom surface of the metal mask 10, in other words, the metal mask 10. In the cross section in the thickness direction of the inner wall surface constituting the slit 15, the angle formed between the inner wall surface of the slit 15 and the surface of the metal mask 10 on the side in contact with the resin mask 20 (in the illustrated embodiment, the lower surface of the metal mask) is 5 It is preferably within the range of ° to 85 °, more preferably within the range of 15 ° to 80 °, and even more preferably within the range of 25 ° to 65 °. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable. With such a cross-sectional shape, even if the thickness of the metal mask 10 is relatively thick for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or improving durability, the metal is released from the vapor deposition source. The vapor deposition material can reach the vapor deposition object without colliding with the inner wall surface of the slit 15. As a result, the occurrence of shadows can be more effectively prevented. In addition, although the end surface which the opening part 25 of the resin mask 20 faces may be substantially parallel, as demonstrated above. Both the slit 15 of the metal mask 10 and the opening 25 of the resin mask 20 preferably have a shape in which the cross-sectional shape expands toward the vapor deposition source side.

  The material of the metal mask 10 is not particularly limited, and any conventionally known material can be appropriately selected and used in the field of the evaporation mask, and examples thereof include metal materials such as stainless steel, iron-nickel alloy, and aluminum alloy. . Among them, an invar material that is an iron-nickel alloy can be suitably used because it is less deformed by heat. The same applies to the vapor deposition mask of the embodiment (B).

  Further, when performing vapor deposition on the substrate using the vapor deposition mask 100 of the embodiment (A), if it is necessary to place a magnet or the like behind the substrate and attract the vapor deposition mask 100 in front of the substrate by magnetic force, The metal mask 10 is preferably formed of a magnetic material. Examples of the magnetic metal mask 10 include iron-nickel alloy, pure iron, carbon steel, tungsten (W) steel, chromium (Cr) steel, cobalt (Co) steel, and iron alloys including cobalt, tungsten, chromium, and carbon. List some KS steels, MK steels mainly composed of iron, nickel and aluminum, NKS steels with cobalt and titanium added to MK steels, Cu-Ni-Co steels, aluminum (Al) -iron (Fe) alloys, etc. Can do. When the material forming the metal mask 10 is not a magnetic material, the metal mask 10 may be magnetized by dispersing the magnetic powder in the material. The same applies to the vapor deposition mask of the embodiment (B).

  FIG. 9 is a front view showing another aspect of the vapor deposition mask 100 of the embodiment (A). As shown in FIG. 9, in the front view seen from the metal mask 10 side of the vapor deposition mask 100, the openings 25 constituting one screen may be alternately arranged in the horizontal direction. In other words, the openings 25 adjacent in the horizontal direction may be shifted in the vertical direction. By arranging in this way, even when the resin mask 20 is thermally expanded, the expansion generated in various places can be absorbed by the opening 25, and the expansion is prevented from accumulating and causing a large deformation. Can do.

<Deposition mask of embodiment (B)>
As shown in FIGS. 11 and 12, the vapor deposition mask of the embodiment (B) includes a metal mask 10 provided with one through hole 15 and a resin mask provided with a plurality of openings corresponding to the pattern to be produced by vapor deposition. 20 are stacked, and all of the plurality of openings 25 are provided at positions overlapping one through-hole provided in the metal mask 10. 11 is a front view of the vapor deposition mask of the embodiment (B) as viewed from the metal mask side, and FIG. 12 is a partially enlarged schematic sectional view of the vapor deposition mask shown in FIG.

  According to the vapor deposition mask 100 of Embodiment (B), since the metal mask 10 is provided on the resin mask 20, durability and handling property of the vapor deposition mask 100 can be improved. In addition, when it is set as the vapor deposition mask which consists only of a resin mask, without providing the metal mask 10 on the resin mask 20, durability and handling property of a vapor deposition mask will fall. In particular, in order to form a high-definition vapor deposition pattern, it is preferable that the thickness of the resin mask is thin, and when the thickness of the resin mask is reduced, the durability of the vapor deposition mask consisting only of the resin mask is reduced. The handling performance will be further reduced.

  According to the vapor deposition mask of the embodiment (B), even when the thickness of the resin mask 20 is reduced as described above, sufficient durability for the vapor deposition mask 100 is obtained due to the presence of the metal mask 10. , Handling properties can be imparted.

  In the vapor deposition mask of the embodiment (B), the metal mask 10 having one through hole 15 is provided on the resin mask 20 having the plurality of openings 25, and all of the plurality of openings 25 are provided. Is provided at a position overlapping the one through hole 15. In the vapor deposition mask 100 according to the embodiment (B) having this configuration, since there is no metal portion between the openings 25, the openings 25 provided in the resin mask 20 are not affected by the interference of the metal portions. A high-definition deposition pattern can be formed according to the dimensions.

  Hereinafter, the superiority of the vapor deposition mask of the embodiment (B) will be specifically described with reference to FIG. In FIG. 17A, the opening 25a of the resin mask 20a is divided by a plurality of through holes 15a, and there is a metal portion forming the wall surface of the through hole 15a between the openings 25a. It is a partial expanded sectional view of a vapor deposition mask. Moreover, FIG.17 (b) is the elements on larger scale of the vapor deposition mask which made the thickness of the metal mask 10a thick in FIG.17 (a).

  As shown in FIGS. 17A and 17B, when the metal portion forming the wall surface of the through hole 15a is present between the openings 25a, the vapor deposition masks shown in FIGS. 17A and 17B are used. During the formation of the used vapor deposition pattern, the vapor deposition material released from the vapor deposition source collides with the metal portion, and the accuracy of the vapor deposition pattern to be formed decreases due to the influence of shadows. The shadow is a part of the vapor deposition material released from the vapor deposition source that collides with the wall surface of the through hole of the metal mask and does not reach the vapor deposition target, thereby causing the vapor deposition pattern to have a thickness greater than the target vapor deposition thickness. This refers to a phenomenon in which an undeposited portion having a thin film thickness occurs. The collision of the vapor deposition material with the metal portion can be more prominent as the thickness of the metal portion is increased, in other words, as the thickness of the metal mask 10a is increased.

  In order to prevent the occurrence of shadows, it is effective to reduce the thickness of the metal mask 10a as shown in FIG. 17A. However, the size of the opening 25a is required to form a high-definition deposition pattern. When the pitch between the openings 25a is made finer, even if the thickness of the metal mask 10a is reduced and the thickness of the metal portion existing between the openings 25a is reduced, the influence of the shadow is affected. Formation of a high-definition vapor deposition pattern becomes difficult. Further, by reducing the thickness of the metal mask 10a, the durability of the entire vapor deposition mask is also lowered. Furthermore, when the pitch between the openings 25a is narrowed, it is necessary to thin the metal part existing between the openings 25a, and the risk of disconnection of the metal part increases.

  On the other hand, in the vapor deposition mask 100 of the embodiment (B), as shown in FIGS. 17C and 17D, the metal portion forming the wall surface of the through hole 15 does not exist between the openings 25, so that the shadow It is possible to form a high-definition deposition pattern without being affected by the above. In other words, since the metal portion forming the wall surface of the through hole 15 is located near the end of the vapor deposition mask 100, it is possible to form a high-definition vapor deposition pattern without affecting the formation of the vapor deposition pattern. It becomes possible. Furthermore, as shown in FIG. 17 (d), even when the thickness of the metal mask 10 is increased, the metal mask 10 is hardly affected by shadows. In addition, the thickness and the handling property can be sufficiently increased, and the durability and the handling property can be improved while enabling the formation of a high-definition deposition pattern.

(Resin mask forming vapor deposition mask of embodiment (B))
The resin mask 20 constituting the vapor deposition mask of the embodiment (B) is made of resin, and as shown in FIG. 12, a plurality of openings 25 corresponding to the pattern to be vapor deposited are provided at positions overlapping with one through hole 15. ing. The opening 25 corresponds to a pattern to be produced by vapor deposition, and the vapor deposition material released from the vapor deposition source passes through the opening 25 so that a vapor deposition pattern corresponding to the opening 25 is formed on the vapor deposition target. The In the illustrated form, an example in which the openings are arranged in a plurality of rows in the vertical and horizontal directions is described. However, the openings may be arranged only in the vertical or horizontal direction. The vapor deposition mask 100 of the embodiment (A) is provided with the slit 15 of the metal mask 10 at a position that overlaps at least one screen formed of an assembly of openings provided in the resin mask, while the embodiment (B The vapor deposition mask 100 is different from the vapor deposition mask of the embodiment (A) in that the through-holes 15 of the metal mask 10 are located at positions that overlap all the openings provided in the resin mask. Except for this difference, the mode described in the vapor deposition mask of the embodiment (A) can be appropriately selected. Hereinafter, the difference will be mainly described.

There is no particular limitation on the shape and size of the opening 25, and any shape and size corresponding to the pattern to be deposited may be used. Also, as shown in FIG. 11, the vertical pitch P1 and the horizontal pitch P2 of the adjacent openings 25 can be set as appropriate according to the pattern to be deposited. For example, when forming a high-definition vapor deposition pattern of 400 ppi, the vertical pitch (P1) and the horizontal pitch (P2) of adjacent openings 25 in the openings 25 constituting one screen are about 60 μm. It becomes. The size of the opening becomes 500μm ² ~1000μm ² about. In addition, one opening 25 is not limited to corresponding to one pixel. For example, depending on the pixel arrangement, a plurality of pixels can be integrated into one opening 25.

  The vapor deposition mask 100 of the embodiment (B) may be used for forming a vapor deposition pattern corresponding to one screen, or may be used for the simultaneous formation of vapor deposition patterns corresponding to two or more screens. Good. In this case, as shown in FIG. 15, it is preferable that the openings 25 are provided at predetermined intervals for each screen unit. In FIG. 15, an area enclosed by a broken line is “one screen”. In FIG. 15, one screen is constituted by twelve openings 25, but is not limited to this form. For example, when one opening 25 is one pixel, millions of One screen can be constituted by the opening 25. As an example of the pitch between the screens, both the vertical pitch and the horizontal pitch are about 1 mm to 100 mm. Note that the pitch between the screens means a pitch between adjacent openings in one screen and another screen adjacent to the one screen.

  FIG. 18 is a front view showing another aspect of the vapor deposition mask 100 of the embodiment (B). As shown in FIG. 18, in the front view seen from the metal mask 10 side of the vapor deposition mask 100, the openings 25 may be alternately arranged in the horizontal direction. In other words, the openings 25 adjacent in the horizontal direction may be shifted in the vertical direction. By arranging in this way, even when the resin mask 20 is thermally expanded, the expansion generated in various places can be absorbed by the opening 25, and the expansion is prevented from accumulating and causing a large deformation. Can do.

(Metal mask forming vapor deposition mask of embodiment (B))
The metal mask 10 constituting the vapor deposition mask of the embodiment (B) is made of metal and has one through hole 15. And in the vapor deposition mask of embodiment (B), the said one through-hole 15 is arrange | positioned in the resin mask 20 in the position which overlaps with all the opening parts 25 when it sees from the front of the metal mask 10, in other words. It arrange | positions in the position which can see all the opening parts 25. FIG.

  A metal part constituting the metal mask 10, that is, a part other than the through hole 15 may be provided along the outer edge of the vapor deposition mask 100 as shown in FIG. 11, and the size of the metal mask 10 as shown in FIG. The thickness may be smaller than that of the resin mask 20, and the outer peripheral portion of the resin mask 20 may be exposed. 14 is a partially enlarged schematic cross-sectional view of the vapor deposition mask shown in FIG. Further, the size of the metal mask 10 may be made larger than that of the resin mask 20, and a part of the metal portion may protrude outward in the horizontal direction or in the vertical direction of the resin mask. In any case, the size of the through hole 15 is smaller than the size of the resin mask 20.

  Although there is no particular limitation on the horizontal width (W1) and the vertical width (W2) of the metal portion forming the wall surface of the through hole of the metal mask 10 shown in FIG. 11, the widths of W1 and W2 are reduced. As time goes on, durability and handling properties tend to decrease. Therefore, it is preferable that W1 and W2 have widths that can sufficiently satisfy durability and handling properties. An appropriate width can be set as appropriate according to the thickness of the metal mask 10, but as an example of a preferable width, both W1 and W2 are about 1 mm to 100 mm.

  Further, in order to sufficiently prevent the occurrence of shadow in the opening 25 located in the vicinity of the inner wall surface of the through-hole 15, it is preferable that the cross-sectional shape of the through-hole 15 is a shape that expands toward the vapor deposition source. . By setting it as such a cross-sectional shape, the vapor deposition material discharge | released from the vapor deposition source can be passed through also in the opening part 25 located in the inner wall face vicinity of the through-hole 15 without waste. Specifically, the angle formed by the straight line connecting the lower bottom tip of the through hole 15 of the metal mask 10 and the upper bottom tip of the through hole 15 of the metal mask 10 and the bottom surface of the metal mask 10 is 25 ° to 65 °. It is preferable to be within the range. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable.

  The vapor deposition mask 100 according to the embodiment (B) of the present invention has been described mainly with respect to the example in which only one through hole 15 is provided in the metal mask 10, but the metal mask 10 has a plurality of through holes 15. May be provided. In this case, it is an essential condition that one through-hole 15 of the plurality of through-holes 15 is provided at a position overlapping with all the openings 25 provided in the resin mask 20.

(Method for Manufacturing Deposition Mask of Embodiment (A))
Next, the manufacturing method of the vapor deposition mask of embodiment (A) of this invention is demonstrated. As shown in FIG. 10A, the method for manufacturing the vapor deposition mask 100 of the embodiment (A) is a metal mask with a resin plate in which a metal mask 10 provided with a plurality of slits 15 and a resin plate 30 are laminated. And a resin mask forming step of forming openings 25 necessary for forming a plurality of screens on the resin plate 30 by irradiating a laser from the metal mask side as shown in FIG. In addition, as the metal mask 10 constituting the metal mask with a resin plate, a metal mask provided with a slit 15 that overlaps at least one entire screen among a plurality of screens is used. Hereinafter, the manufacturing method of the vapor deposition mask of embodiment (A) is demonstrated concretely.

(Process for preparing metal mask with resin plate)
In preparing a metal mask with a resin plate in which a metal mask 10 provided with slits and a resin plate 30 shown in FIG. 10A are prepared, first, a metal mask provided with a plurality of slits 15 is prepared. . In the vapor deposition mask manufacturing method of the embodiment (A), the metal mask 10 prepared here is the entire opening 25 provided in at least one entire screen described in the vapor deposition mask 100 of the above-described embodiment (A). The metal mask 10 provided with the slit 15 that overlaps with is used.

  The method for bonding the metal mask and the resin plate to form a metal mask with a resin plate and the forming method are also not particularly limited. A metal mask with a resin plate can be obtained by preparing a body and forming slits 15 in the metal plate in the state of a laminate. In the manufacturing method of the vapor deposition mask of embodiment (A), the resin layer which comprises the metal mask with a resin plate also includes the resin layer formed by coating as mentioned above. That is, the resin plate may be prepared in advance or may be formed by a conventionally known coating method or the like. Moreover, the metal mask 10 and the resin plate may be bonded together using various adhesives, or a resin plate having self-adhesiveness may be used. The metal mask 10 and the resin plate 30 may have the same size. If the resin plate 30 is made smaller than the metal plate 10 and the outer peripheral portion of the metal mask 10 is exposed in consideration of the optional fixing to the frame thereafter, the metal mask 10 and the frame This is preferable because it can be easily welded. The same applies to the method for manufacturing the vapor deposition mask of the embodiment (B), and the slit may be read as one through hole.

  As a method of forming the metal mask 10 provided with the slit 15, a masking member, for example, a resist material is applied to the surface of the metal plate, a predetermined portion is exposed and developed, and finally the slit 15 is formed. A resist pattern is formed leaving the position to be formed. As the resist material used as the masking member, those having good processability and desired resolution are preferable. Next, etching is performed by an etching method using this resist pattern as an etching resistant mask. After the etching is completed, the resist pattern is removed by washing. Thereby, the metal mask 10 provided with the plurality of slits 15 is obtained. Etching for forming the slit 15 may be performed from one side of the metal plate or from both sides. In addition, when the slit 15 is formed in the metal plate using the laminate in which the resin plate is provided on the metal plate, the resist pattern is applied after coating the masking member on the surface of the metal plate that is not in contact with the resin plate. Next, the slit 15 is formed by etching from one side. In addition, when the resin plate has etching resistance to the etching material of the metal plate, it is not necessary to mask the surface of the resin plate, but when the resin plate does not have resistance to the etching material of the metal plate. Needs to be coated with a masking member on the surface of the resin plate. In the above description, the resist material is mainly described as the masking member. However, instead of coating the resist material, a dry film resist may be laminated and the same patterning may be performed. The same applies to the method for manufacturing the vapor deposition mask of the embodiment (B), and the slit may be read as one through hole.

(Process to fix the metal mask with resin plate to the frame)
This step is an optional step in the method of manufacturing the vapor deposition mask according to the embodiment (A). Since the opening is provided later, the positional accuracy can be improved remarkably. In addition, when fixing the completed vapor deposition mask 100 to a frame, in order to fix a metal mask with an opening determined with respect to the frame, the opening position coordinate accuracy is higher than in the case of having this process. Will be reduced.

  There is no particular limitation on the method for fixing the metal mask with a resin plate to the frame. For example, a conventionally known process method such as spot welding may be appropriately employed.

(Process of forming an opening corresponding to the pattern to be deposited on the resin plate of the metal mask with resin plate by irradiating the laser from the metal mask side)
Next, as shown in FIG. 10B, a laser is irradiated from the metal mask 10 side of the metal mask with a resin plate through the slit 15 to form an opening 25 corresponding to the pattern to be deposited on the resin plate 30. The resin mask 20 is used. The laser device used here is not particularly limited, and a conventionally known laser device may be used. Thereby, the vapor deposition mask 100 of embodiment (A) as shown in FIG.10 (c) is obtained.

  In the manufacturing method of the embodiment (A), since the metal mask 10 in which the slit 15 is provided in advance at the position overlapping the entire screen or two or more entire screens is used, one slit 15 is used in this step. An opening 25 necessary for configuring one screen or an opening 25 necessary for configuring two or more screens is formed therein. That is, one slit 15 is provided so as to overlap with an opening constituting the entire screen or an opening 25 constituting two or more entire screens.

  Further, when the opening 25 is provided in the resin plate of the metal mask with the resin plate fixed to the frame, a reference plate (not shown) in which a pattern for vapor deposition, that is, a pattern corresponding to the opening 25 to be formed is provided in advance. In a state where the reference plate is bonded to the surface of the resin plate where the metal mask 10 is not provided, laser irradiation corresponding to the pattern of the reference plate may be performed from the metal mask 10 side. . According to this method, the opening 25 can be formed in a so-called facing-off state in which laser irradiation is performed while observing the pattern of the reference plate bonded to the metal mask with the resin plate, and the dimensional accuracy of the opening is extremely high. The high-definition opening 25 can be formed. Moreover, since this method forms the opening part 25 in the state fixed to the flame | frame, it can be set as the vapor deposition mask excellent in not only a dimensional accuracy but a positional accuracy.

  In the case of using the above method, it is necessary that the pattern of the reference plate can be recognized by a laser irradiation device or the like through the resin plate 30 from the metal mask 10 side. As the resin plate, when it has a certain thickness, it is necessary to use a transparent one. However, as described above, a preferable thickness considering the influence of shadow, for example, about 3 μm to 25 μm. In the case of the thickness, the reference plate pattern can be recognized even with a colored resin plate. The same method can be used also for the manufacturing method of the vapor deposition mask of embodiment (B).

  The method for bonding the metal mask with resin plate and the reference plate is not particularly limited. For example, when the metal mask 10 is a magnetic body, a magnet or the like is disposed behind the reference plate, and the metal with resin plate is provided. They can be bonded together by attracting the resin plate 30 of the mask and the reference plate. In addition, it can also be bonded using an electrostatic adsorption method or the like. Examples of the reference plate include a TFT substrate having a predetermined opening pattern and a photomask. The same method can be used also for the manufacturing method of the vapor deposition mask of embodiment (B).

  In addition, a slimming process may be performed between the processes described above or after the processes. For example, when a resin plate 30 that finally becomes the resin mask 20 or a metal mask 10 that is thicker than the preferred thickness described above is used, the metal mask 10 or the resin plate 30 is removed during the manufacturing process. When transporting alone, excellent durability and transportability can be imparted. On the other hand, in order to prevent the generation of shadows and the like, it is preferable that the thickness of the vapor deposition mask 100 obtained by the manufacturing method of the embodiment (A) is an optimum thickness. The slimming process is a useful process for optimizing the thickness of the vapor deposition mask 100 while satisfying durability and transportability during or after the manufacturing process.

  The slimming of the metal mask 10 is the surface of the metal mask 10 that does not contact the resin plate 30 or the surface of the metal mask 10 that does not contact the resin plate 30 or the resin mask 20 during or after the above-described steps. Can be realized by etching using an etching material capable of etching the metal mask 10.

  The same applies to the resin plate 30 to be the resin mask 20 and the slimming of the resin mask 20, that is, the optimization of the thickness of the resin plate 30 and the resin mask 20, and during or after any of the above-described steps, The surface of the resin plate 30 that is not in contact with the metal mask 10 or the surface of the resin mask 20 that is not in contact with the metal mask 10 is etched using an etching material that can etch the material of the resin plate 30 and the resin mask 20. This is possible. Moreover, after forming the vapor deposition mask 100, both the metal mask 10 and the resin mask 30 can be etched, and both thicknesses can also be optimized. The above slimming process can also be applied as it is in the method for manufacturing a vapor deposition mask of the embodiment (B).

(Method for manufacturing vapor deposition mask of embodiment (B))
Next, the manufacturing method of the vapor deposition mask of embodiment (B) of this invention is demonstrated. The manufacturing method of the vapor deposition mask 100 of embodiment (B) prepares the metal mask with a resin plate by which the metal mask 10 provided with one through-hole and the resin plate 30 were laminated | stacked, as shown in FIG. A process (see FIG. 19A) and a resin mask forming process for forming a plurality of openings 25 at positions overlapping with one through hole 15 of the resin plate 30 by irradiating laser from the metal mask 10 side (FIG. 19 ( and b)). Hereinafter, the manufacturing method of the vapor deposition mask of embodiment (B) is demonstrated concretely.

(Process for preparing metal mask with resin plate)
This step is a step of preparing a metal mask with a resin plate in which the metal mask 10 and the resin plate 30 are laminated by bonding the metal mask 10 provided with one through hole 15 and the resin plate 30 together. .

(Process to fix the metal mask with resin plate to the frame)
This step is an optional step in the method for manufacturing the vapor deposition mask of the embodiment (B), and the method described in the method for manufacturing the vapor deposition mask in the above embodiment (A) can be used as it is. Description is omitted.

(Process of irradiating a laser from the metal mask side to form a plurality of openings overlapping one through hole in the metal mask with a resin plate)
Next, as shown in FIG. 19B, a laser beam is irradiated from the metal mask 10 side through one through hole 15 to form an opening 25 corresponding to a pattern to be deposited on the resin plate 30, thereby forming a resin mask. 20 In this step, since laser irradiation is performed through one through hole 15, a plurality of openings 25 are finally formed at positions overlapping with one through hole 15. The laser device used here is not particularly limited, and a conventionally known laser device may be used. Thereby, the vapor deposition mask 100 of embodiment (B) as shown in FIG.19 (c) is obtained.

(Deposition mask preparation)
Next, the vapor deposition mask preparation body of one Embodiment of this invention is demonstrated. The vapor deposition mask preparation of one embodiment of the present invention is a laminate of a metal mask provided with a plurality of slits and a resin mask, and the resin mask is provided with openings necessary to form a plurality of screens. The portion corresponds to the pattern to be produced by vapor deposition, and each of the slits is a vapor deposition mask preparation for obtaining a vapor deposition mask provided at a position overlapping at least one entire screen, on one surface of the resin plate A metal mask provided with slits is laminated, and each slit is provided at a position overlapping with the entire opening constituting one screen finally provided on the resin plate.

  The vapor deposition mask preparation of one embodiment of the present invention is common to the vapor deposition mask 100 of the above-described embodiment (A) except that the opening 25 is not provided in the resin plate, and a specific description is as follows. Omitted. As a specific configuration of the vapor deposition mask preparation of one embodiment, a metal mask with a resin plate (see FIG. 10A) prepared in the preparation step in the vapor deposition mask manufacturing method of the above embodiment (A) is given. be able to.

  According to the vapor deposition mask preparation of the above-described embodiment, by forming an opening in the resin plate of the vapor deposition mask preparation, both high definition and light weight can be achieved even when the size is increased, and high definition vapor deposition is achieved. A vapor deposition mask capable of forming a pattern can be obtained.

  The vapor deposition mask preparation of another embodiment is formed by laminating a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to a pattern to be produced by vapor deposition, and all of the plurality of openings. Is a vapor deposition mask preparation for obtaining a vapor deposition mask provided at a position overlapping with one through-hole, and a metal mask having one through-hole is laminated on one surface of the resin plate. Thus, one through hole is provided at a position overlapping with all the openings finally provided in the resin plate.

  The vapor deposition mask preparation of another embodiment is common to the vapor deposition mask 100 of the embodiment (B) described above except that the opening 25 is not provided in the resin plate, and a specific description is omitted. . As a specific configuration of the vapor deposition mask preparation of another embodiment, a metal mask with a resin plate (see FIG. 19A) prepared in the preparation step in the vapor deposition mask manufacturing method of the above embodiment (B). Can be mentioned.

  According to the vapor deposition mask preparation of the other embodiment described above, by forming the opening in the resin plate of the vapor deposition mask preparation, both high definition and light weight can be satisfied even when the size is increased, and high definition is achieved. A vapor deposition mask capable of forming a vapor deposition pattern can be obtained.

(Method for manufacturing organic semiconductor element)
Next, the manufacturing method of the organic-semiconductor element of one Embodiment of this invention is demonstrated. The manufacturing method of the organic-semiconductor element of one Embodiment of this invention has the process of forming a vapor deposition pattern by the vapor deposition method using the vapor deposition mask with a flame | frame, In the process of forming the said organic semiconductor element, the following vapor deposition mask with a flame | frame It is characterized in that is used.

  An organic semiconductor device manufacturing method according to an embodiment having a step of forming a vapor deposition pattern by a vapor deposition method using a vapor deposition mask with a frame includes an electrode forming step of forming an electrode on a substrate, an organic layer forming step, and a counter electrode forming step. The deposition pattern is formed on the substrate by a deposition method using a deposition mask with a frame in each optional step. For example, when the vapor deposition method using a vapor deposition mask with a frame is applied to the R, G, B light emitting layer forming step of the organic EL device, vapor deposition patterns of the respective color light emitting layers are formed on the substrate. In addition, the manufacturing method of the organic-semiconductor element of one Embodiment of this invention is not limited to these processes, It is applicable to the arbitrary processes in manufacture of the conventionally well-known organic-semiconductor element using a vapor deposition method.

  In the method of manufacturing an organic semiconductor element of one embodiment of the present invention, in the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame is the vapor deposition mask of the embodiment (A) described above or the embodiment. It is a vapor deposition mask of (B).

  As the vapor deposition mask constituting the vapor deposition mask with a frame, the vapor deposition mask 100 of the embodiment (A) or the embodiment (B) described above can be used as it is, and detailed description thereof is omitted here. According to the manufacturing method of the organic semiconductor element using the vapor deposition mask of the embodiment (A) of the present invention described above and the frame-equipped vapor deposition mask including the vapor deposition mask of the embodiment (B), it has a high-definition pattern. An organic semiconductor element can be formed. As an organic semiconductor element manufactured with the manufacturing method of the organic semiconductor element of one Embodiment of this invention, the organic layer, light emitting layer, cathode electrode, etc. of an organic EL element can be mentioned, for example. In particular, the method for manufacturing an organic semiconductor element according to an embodiment of the present invention can be suitably used for manufacturing R, G, and B light emitting layers of organic EL elements that require high-definition pattern accuracy.

  If the vapor deposition mask with a frame used for manufacturing an organic semiconductor element satisfies the condition that the vapor deposition mask of the embodiment (A) or the embodiment (B) described above is fixed to the frame, the condition is satisfied. The other conditions are not particularly limited. The frame is not particularly limited and may be any member that can support the vapor deposition mask. For example, a metal frame, a ceramic frame, or the like can be used. Among these, the metal frame is preferable in that it can be easily welded to the metal mask of the vapor deposition mask and the influence of deformation or the like is small. Hereinafter, an example using a metal frame as a frame will be mainly described. For example, as illustrated in FIG. 20, a metal frame-attached vapor deposition mask 200 in which one vapor deposition mask 100 is fixed to the metal frame 60 may be used. As illustrated in FIG. A metal frame-equipped vapor deposition mask 200 in which vapor deposition masks (four vapor deposition masks in the illustrated form) are arranged in the vertical direction or in the horizontal direction and fixed (in the illustrated form, arranged in the horizontal direction) may be used. 20 and 21 are front views of the vapor deposition mask 200 with a metal frame of one embodiment as viewed from the resin mask 20 side.

  The metal frame 60 is a substantially rectangular frame member, and has an opening for exposing the opening 25 provided in the resin mask 20 of the vapor deposition mask 100 to be finally fixed to the vapor deposition source side. The material of the metal frame is not particularly limited, but a metal material having high rigidity, for example, SUS or Invar material is preferable.

  The thickness of the metal frame is not particularly limited, but is preferably about 10 mm to 30 mm from the viewpoint of rigidity and the like. The width between the inner peripheral end face of the opening of the metal frame and the outer peripheral end face of the metal frame is not particularly limited as long as the metal frame and the metal mask of the vapor deposition mask can be fixed. A width of about 50 mm can be exemplified.

  Further, a reinforcing frame 65 or the like may be present in the opening of the metal frame as long as the exposure of the opening 25 of the resin mask 20 constituting the vapor deposition mask 100 is not disturbed. In other words, the opening of the metal frame 60 may be divided by the reinforcing frame or the like. In the form shown in FIG. 20, a plurality of reinforcing frames 65 extending in the horizontal direction are arranged in the vertical direction. Instead of this reinforcing frame 65, or in parallel with this, reinforcing frames extending in the vertical direction are arranged in a plurality of rows in the horizontal direction. May be. Further, in the form shown in FIG. 21, a plurality of reinforcing frames 65 extending in the vertical direction are arranged in the horizontal direction. However, instead of or in addition to the reinforcing frame 65, the reinforcing frames extending in the horizontal direction are arranged in the vertical direction. A plurality of them may be arranged. By using the metal frame 60 in which the reinforcing frame 65 is disposed, a plurality of the vapor deposition masks 100 of the embodiment (A) or the embodiment (B) described above are arranged in the metal frame 60 in the vertical direction and the horizontal direction. When fixing, the vapor deposition mask can be fixed to the metal frame 60 even at a position where the reinforcing frame and the vapor deposition mask overlap.

  There is no particular limitation on the method for fixing the metal frame 60 to the vapor deposition mask 100 of the embodiment (A) or the embodiment (B) described above, and spot welding, adhesive, and screwing that are fixed by laser light or the like. Etc. can be used for fixing.

DESCRIPTION OF SYMBOLS 100 ... Deposition mask 10 ... Metal mask 15 ... Slit, through-hole 20 ... Resin mask 25 ... Opening 28 ... Groove 60 ... Metal frame 200 ... Deposition mask with frame

Claims (3)

A metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to the pattern to be deposited are laminated,
The vapor deposition mask, wherein all of the plurality of openings are provided at positions overlapping the one through hole. A position in which a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to the pattern to be deposited are stacked, and all of the plurality of openings overlap with the one through hole. In the vapor deposition mask preparation for obtaining the vapor deposition mask provided in
A metal mask provided with a slit is laminated on one surface of the resin plate,
Each said one through-hole is provided in the position which overlaps with the whole opening part finally provided in the said resin board, The vapor deposition mask preparation body characterized by the above-mentioned. A method for producing an organic semiconductor element, comprising:
Forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask with a frame having a vapor deposition mask fixed to the frame;
In the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame,
A position in which a metal mask provided with one through hole and a resin mask provided with a plurality of openings corresponding to the pattern to be deposited are stacked, and all of the plurality of openings overlap with the one through hole. A method for producing an organic semiconductor element, characterized by being a vapor deposition mask provided on the substrate.

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