JP6394877B2 - Vapor deposition mask, vapor deposition mask manufacturing method, vapor deposition mask preparation, framed vapor deposition mask, and organic semiconductor element manufacturing method - Google Patents

Description

  The present invention relates to a vapor deposition mask, a method for producing a vapor deposition mask, a vapor deposition mask preparation, a vapor deposition mask with a frame, and a method for producing an organic semiconductor element.

  Conventionally, in the manufacture of an organic EL element, the organic layer or cathode electrode of the organic EL element is formed of, for example, a metal in which a large number of minute slits are arranged in parallel at minute intervals in a region to be deposited. A vapor deposition mask was used. When using this vapor deposition mask, the vapor deposition mask is placed on the surface of the substrate to be vapor-deposited and held by a magnet from the back side, but the rigidity of the slit is extremely small, so when holding the vapor deposition mask on the substrate surface In this case, the slits are easily distorted, which has been an obstacle to the increase in the size of products with high definition or a long slit length.

  Various studies have been made on the vapor deposition mask for preventing the distortion of the slit. For example, Patent Document 1 covers a base plate that also serves as a first metal mask having a plurality of openings, and covers the openings. There has been proposed a vapor deposition mask having a second metal mask having a large number of fine slits in the region and a mask tension holding means for positioning the second metal mask on the base plate in a state where the second metal mask is pulled in the longitudinal direction of the slit. That is, a vapor deposition mask in which two kinds of metal masks are combined has been proposed. According to this vapor deposition mask, it is said that the slit accuracy can be ensured without causing distortion in the slit.

  Recently, with the increase in size of products using organic EL elements or the increase in substrate size, there is an increasing demand for deposition masks, which are used in the manufacture of deposition masks made of metal. Metal plates are also getting bigger. However, with the current metal processing technology, it is difficult to accurately form a slit in a large metal plate, and even if the slit portion can be prevented from being distorted by the method proposed in Patent Document 1 above, Cannot cope with high definition of slits. Further, in the case of a vapor deposition mask made of only metal, the mass increases with an increase in size, and the total mass including the frame also increases, resulting in trouble in handling.

  In the vapor deposition mask proposed above, in order to reduce the weight of the vapor deposition mask, it is necessary to reduce the thickness of the vapor deposition mask made of metal. However, if the thickness of the vapor deposition mask made of metal is reduced, the strength of the vapor deposition mask will decrease, and the vapor deposition mask may be deformed or may be difficult to handle. Problems will arise.

  Patent Document 2 proposes an evaporation mask in which a resin mask and a metal mask are laminated.

JP 2003-332057 A Japanese Patent No. 5288072

  The present invention has been made in view of such a situation, and it is possible to satisfy both high definition and light weight even when the size is increased, and a deposition mask capable of forming a high definition deposition pattern, Providing a deposition mask with a frame, providing a method of manufacturing the deposition mask, providing a deposition mask preparation used for manufacturing the deposition mask, and further providing an organic semiconductor element It is a main object to provide a method for manufacturing an organic semiconductor element that can be manufactured with high accuracy. Further, to improve the invention described in Patent Document 2, to provide a vapor deposition mask capable of forming a higher-definition vapor deposition pattern, a method for producing this vapor deposition mask, and to produce this vapor deposition mask It is a main subject to provide a vapor deposition mask preparation used for the above, and to provide a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high accuracy.

In order to solve the above problems, the present invention is formed by laminating a metal mask provided with a slit overlapping the opening on one surface of a resin mask provided with an opening corresponding to a pattern to be deposited. It is a vapor deposition mask, and is located on either one surface of the region corresponding to the position overlapping with the slit on the one surface of the resin mask and the other surface of the resin mask, or both surfaces, It has a metal layer that is thinner than the metal mask and does not contact the metal mask.
The vapor deposition mask of one embodiment is a vapor deposition obtained by laminating a metal mask provided with a slit overlapping the opening on one surface of a resin mask provided with an opening corresponding to a pattern to be produced by vapor deposition. A mask having a thickness greater than that of the metal mask on one or both of a region corresponding to a position overlapping with the slit on one surface of the resin mask and the other surface of the resin mask. Is provided with a thin metal layer.

The present invention for solving the above problems is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, wherein the vapor deposition mask is provided with a plurality of slits on one surface of a resin mask. A metal mask is laminated, and the resin mask is provided with openings necessary for constituting a plurality of screens, the openings correspond to patterns to be deposited, and each slit is at least It is provided at a position that overlaps the entire screen, and is located on one or both surfaces of the area corresponding to the position overlapping the slit on the one surface of the resin mask and the other surface of the resin mask. A metal layer that is positioned and is thinner than the metal mask and is not in contact with the metal mask.
The vapor deposition mask of one embodiment is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens, and the vapor deposition mask is a metal having a plurality of slits provided on one surface of a resin mask. A mask is laminated, and the resin mask is provided with openings necessary for constituting a plurality of screens. The openings correspond to a pattern to be deposited, and each slit has at least one slit. The metal is provided on a position overlapping with the entire screen and on one or both of the area corresponding to the position overlapping with the slit on one surface of the resin mask and the other surface of the resin mask. A metal layer having a thickness smaller than that of the mask is provided.

  In the above invention, the metal layer is provided in a region corresponding to a position overlapping the slit on one surface of the resin mask, and the metal layer is not in contact with the inner wall surface of the slit. It is preferable.

Moreover, this invention for solving the said subject is a vapor deposition mask for forming a vapor deposition pattern , Comprising: The said vapor deposition mask is one side of the resin mask provided with two or more openings corresponding to the pattern produced by vapor deposition. A metal mask is laminated on the surface, and the metal mask has one through hole that overlaps all of the plurality of openings corresponding to the pattern to be deposited, and the one surface of the resin mask In the region corresponding to the position overlapping with the one through hole and the other surface of the resin mask, or on both surfaces, and is thinner than the metal mask and the metal It has a metal layer that is not in contact with the mask.
The vapor deposition mask of an embodiment is a vapor deposition mask for forming a vapor deposition pattern , and the vapor deposition mask is formed on one surface of a resin mask provided with a plurality of openings corresponding to the pattern to be vapor deposited. A metal mask provided with one through hole is laminated, and all of the plurality of openings are provided at a position overlapping the one through hole, and the one through hole is formed on one surface of the resin mask. A metal layer having a thickness smaller than that of the metal mask is provided on one or both of the region corresponding to the position overlapping with the hole and the other surface of the resin mask. .

  In the above invention, the metal layer is provided in a region corresponding to a position overlapping with the one through hole on one surface of the resin mask, and the metal layer is formed of the one through hole. It is preferable not to contact the inner wall surface.

Moreover, this invention for solving the said subject is a manufacturing method of a vapor deposition mask, Comprising: The metal mask with a resin plate by which the metal mask provided with the slit was laminated | stacked on one surface of the resin plate is prepared. A preparatory step, a resin mask forming step of irradiating a laser on one surface of the resin plate through the slit from the metal mask side to form an opening corresponding to a pattern to be deposited on the resin plate, and the resin The region corresponding to the position overlapping with the slit on the one surface of the mask and the one surface of the other surface of the resin mask, or both surfaces are thinner than the metal mask, and A metal layer forming step of forming a metal layer not in contact with the metal mask.
Moreover, this invention for solving the said subject is a manufacturing method of a vapor deposition mask, Comprising: The metal mask with a resin plate by which the metal mask provided with the several slit was laminated | stacked on one surface of the resin plate. A preparatory step of preparing, and a resin mask forming step of irradiating a laser on one surface of the resin plate from the metal mask side through the slit to form openings necessary for constituting a plurality of screens in the resin plate And the thickness corresponding to the position overlapping with the slit on the one surface of the resin mask and the other surface of the resin mask, or on both surfaces, is thicker than the metal mask. A metal layer forming step of forming a thin metal layer that is not in contact with the metal mask, and the metal mask is formed at a position overlapping with at least one entire screen of the plurality of screens. Metal mask bets is provided is used.
According to another embodiment of the present invention, there is provided a vapor deposition mask manufacturing method comprising: a preparation step of preparing a metal mask with a resin plate in which a metal mask provided with a plurality of slits is laminated on one surface of a resin plate; A resin mask forming step of irradiating one side of the resin plate from the side through the slit to form openings necessary for forming a plurality of screens on the resin plate; and one side of the resin mask A metal material is attached to one or both of the region corresponding to the position overlapping with the slit and the other surface of the resin mask, and overlaps the slit on one surface of the resin mask. A metal layer forming step of forming a metal layer having a thickness smaller than that of the metal mask on one or both of the region corresponding to the position and the other surface of the resin mask; Comprising, as the metal mask, the plurality of screens at least one screen metal mask slit is provided on the entire overlaps position of the is characterized by being used.

Moreover, this invention for solving the said subject is a manufacturing method of a vapor deposition mask , Comprising: The metal mask with a resin plate by which the metal mask provided with one through-hole was laminated | stacked on one surface of the resin plate And preparing a plurality of openings in the resin plate at a position overlapping with the one through hole by irradiating a laser on one surface of the resin plate through the one through hole from the metal mask side. Resin mask formation step, on one surface of the resin mask, the region corresponding to the position overlapping the one through hole, and the other surface of the resin mask, or both surfaces, And a metal layer forming step of forming a metal layer that is thinner than the metal mask and is not in contact with the metal mask.
Moreover, the manufacturing method of the vapor deposition mask of one Embodiment is a preparatory process of preparing the metal mask with a resin plate by which the metal mask provided with one through-hole was laminated | stacked on one surface of the resin plate, and the said metal A resin mask forming step of irradiating a laser on one surface of the resin plate from the mask side through the one through-hole to form a plurality of openings in the resin plate at a position overlapping the one through-hole; and the resin mask One of the resin masks is formed by attaching a metal material to one or both of a region corresponding to a position overlapping with the one through-hole on the one surface and the other surface of the resin mask. A metal layer that forms a metal layer having a thickness smaller than that of the metal mask on one or both of a region corresponding to a position overlapping with the one through hole and the other surface of the resin mask. Formation Characterized in that it comprises a degree, the.

  In the above manufacturing method, the resin mask forming step may be performed after fixing the metal mask with a resin plate on a frame.

Further, the present invention for solving the above-mentioned problems is a deposition mask preparation, which is a metal mask provided with a slit, and a pattern which is deposited on the surface of the metal mask and deposited on the surface overlapping the slit. A slit is provided on one surface of the resin plate before the opening is formed, and is used to manufacture a vapor deposition mask formed by laminating a resin mask provided with a corresponding opening. A metal mask is provided, located on one of the surfaces of the resin plate corresponding to the position overlapping with the slit and the other surface of the resin mask, or on both surfaces; It has a metal layer that is thinner than the metal mask and does not contact the metal mask.
Further, the vapor deposition mask preparation of one embodiment includes a metal mask provided with a slit, and a resin provided with openings corresponding to a pattern to be deposited on the surface of the metal mask and overlapping the slit. A metal mask provided with a slit is provided on one surface of the resin plate, and overlaps the slit on one surface of the resin plate. A metal layer having a thickness smaller than that of the metal mask is provided on one or both of the region corresponding to the position and the other surface of the resin plate.

Moreover, this invention for solving the said subject is a vapor deposition mask with a flame | frame with which the vapor deposition mask was fixed to the flame | frame, Comprising: Said vapor deposition mask is used as a vapor deposition mask.
In one embodiment of the vapor deposition mask with a frame, a metal mask provided with a slit overlapping the opening is laminated on one surface of a resin mask provided with an opening corresponding to a pattern to be produced by vapor deposition. In the vapor deposition mask with a frame in which the vapor deposition mask is fixed to the frame, either one of the region corresponding to the position overlapping with the slit on one surface of the resin mask and the other surface of the resin mask, or A metal layer having a thickness smaller than that of the metal mask is provided on both surfaces.

Moreover, this invention for solving the said subject is a manufacturing method of an organic-semiconductor element, Comprising: The process of forming a vapor deposition pattern in a vapor deposition target object using a vapor deposition mask with a flame | frame, As said vapor deposition mask with a flame | frame, Use a vapor deposition mask with a frame.
The manufacturing method of an organic semiconductor device of an embodiment includes a step of deposition mask to the frame to form a deposition pattern on the deposition target object by using a framed deposition mask which is fixed, in the step of forming the deposition pattern, The vapor deposition mask fixed to the frame is formed by laminating a metal mask provided with a slit overlapping the opening on one surface of a resin mask provided with an opening corresponding to a pattern to be produced by vapor deposition. It is a vapor deposition mask, and the region corresponding to the position overlapping with the slit on one surface of the resin mask, and the other surface of the resin mask, on one or both surfaces, than the metal mask It is a vapor deposition mask provided with a thin metal layer.

The manufacturing method of an organic semiconductor device of an embodiment includes a step of deposition mask to the frame to form a deposition pattern on the deposition target object by using a framed deposition mask which is fixed, in the step of forming the deposition pattern, The vapor deposition mask fixed to the frame is formed by laminating a metal mask provided with a plurality of slits on one surface of a resin mask, and the resin mask is necessary for constituting a plurality of screens. An opening is provided, the opening corresponds to a pattern to be deposited, and each slit is provided at a position that overlaps at least one entire screen, and a position that overlaps the slit on one surface of the resin mask. A metal layer having a thickness smaller than that of the metal mask is provided on one or both of the region corresponding to the above and the other surface of the resin mask. Characterized in that it is a vignetting in which evaporation mask.

The manufacturing method of an organic semiconductor device of an embodiment includes a step of deposition mask to the frame to form a deposition pattern on the deposition target object by using a framed deposition mask which is fixed, in the step of forming the deposition pattern, The vapor deposition mask fixed to the frame is formed by laminating a metal mask provided with one through hole on one surface of a resin mask provided with a plurality of openings corresponding to a pattern to be produced by vapor deposition. All of the plurality of openings are provided at a position overlapping with the one through hole, a region corresponding to a position overlapping with the one through hole on one surface of the resin mask, and the other surface of the resin mask. This is a vapor deposition mask in which a metal layer having a thickness smaller than that of the metal mask is provided on one or both surfaces.

  According to the vapor deposition mask and the frame-equipped vapor deposition mask of the present invention, both high definition and light weight can be satisfied even when the size is increased, and a high-definition vapor deposition pattern can be formed. Moreover, according to the vapor deposition mask manufacturing method of the present invention, the vapor deposition mask having the above characteristics can be easily manufactured. Moreover, according to the vapor deposition mask preparation of this invention, said vapor deposition mask can be manufactured accurately. Moreover, according to the manufacturing method of the organic semiconductor element of this invention, an organic semiconductor element can be manufactured with sufficient precision.

It is the front view which looked at the vapor deposition mask of 1st Embodiment from the metal mask side. (A) is an example of AA sectional drawing of the vapor deposition mask shown in FIG. 1, (b), (c) is sectional drawing which shows the modification of the vapor deposition mask of 1st Embodiment. It is a modification of AA sectional drawing of the vapor deposition mask shown in FIG. It is a modification of AA sectional drawing of the vapor deposition mask shown in FIG. It is the elements on larger scale which show an example which expanded the 1 screen part in FIG. It is the front view which looked at the vapor deposition mask of 1st Embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of 1st Embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of 1st Embodiment from the metal mask side. It is a modification of AA sectional drawing of the vapor deposition mask shown in FIG. It is a front view which shows an example of a resin mask. It is a schematic sectional drawing which shows the relationship between a shadow and the thickness of a metal mask. It is the front view which looked at the vapor deposition mask of 1st Embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of 2nd Embodiment from the metal mask side. It is BB sectional drawing of the vapor deposition mask shown in FIG. It is the front view which looked at the vapor deposition mask of 2nd Embodiment from the metal mask side. It is the front view which looked at the vapor deposition mask of 2nd Embodiment from the metal mask side. It is B1-B1 sectional drawing of the vapor deposition mask shown in FIG. It is a schematic sectional drawing which shows the relationship between a shadow and the thickness of a metal mask. It is a schematic sectional drawing which shows an example of the manufacturing method of the vapor deposition mask of 1st Embodiment. It is a schematic sectional drawing which shows an example of the manufacturing method of the vapor deposition mask of 2nd Embodiment. It is a schematic sectional drawing which shows an example of a vapor deposition mask preparation body. It is a modification of AA sectional drawing of the vapor deposition mask shown in FIG. It is the front view which looked at the vapor deposition mask with a frame of one embodiment from the resin mask side. It is the front view which looked at the vapor deposition mask with a frame of one embodiment from the resin mask side.

  Hereinafter, the vapor deposition mask 100 of the present invention will be described in detail with reference to the drawings divided into the first embodiment and the second embodiment. In addition, the vapor deposition mask 100 of 1st Embodiment and 2nd Embodiment respond | corresponds to the position which overlaps with the slit 15 of the metal mask 10, and the one through-hole 16 on one surface of the resin mask 20, so that it may mention later. A common feature is that the metal layer 40 is provided on the other area of the resin mask 20 or on the other surface of the resin mask 20.

<Deposition Mask of First Embodiment>
As shown in FIG. 1 to FIG. 9 and FIG. 12, the vapor deposition mask 100 of the first embodiment of the present invention is a vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens. A metal mask 10 provided with a plurality of slits 15 is laminated on the surface, and the resin mask 20 is provided with openings 25 necessary to form a plurality of screens, and each slit 15 includes at least one slit 15. It is provided at a position overlapping with the entire screen. Furthermore, the vapor deposition mask 100 of 1st Embodiment is on the surface corresponding to the position which overlaps with the slit 15 in one surface of the resin mask 20, and the other surface of the resin mask 20, or both surfaces. A metal layer 40 having a thickness smaller than that of the metal mask is provided. Hereinafter, an example in which the metal layer 40 is provided on a region corresponding to the position overlapping the slit 15 on one surface of the resin mask 20 will be mainly described. 1, FIG. 6 to FIG. 8 and FIG. 12 are front views of the vapor deposition mask showing an example of the vapor deposition mask of the first embodiment as seen from the metal mask side. 2A is a cross-sectional view taken along the line AA of the vapor deposition mask of the first embodiment shown in FIG. 1, and FIGS. 2B and 2C are cross-sectional views showing modifications of the vapor deposition mask of the first embodiment. It is. 3 and 4 are sectional views showing modifications of the vapor deposition mask of the first embodiment shown in FIG. FIG. 5 is a partial enlarged view showing an example in which one screen portion in FIG. 1 is enlarged. In the form shown in each drawing, the thickness of the metal layer 40 is exaggerated.

  The vapor deposition mask 100 of 1st Embodiment is a vapor deposition mask used in order to form the vapor deposition pattern for several screens simultaneously, and can form the vapor deposition pattern corresponding to several products simultaneously with one vapor deposition mask 100. FIG. it can. The “opening” referred to in the vapor deposition mask of the first embodiment means a pattern to be produced using the vapor deposition mask 100 of the first embodiment. For example, the vapor deposition mask is formed as an organic layer in an organic EL display. When used for the above, the shape of the opening 25 is the shape of the organic layer. In the vapor deposition mask 100 of 1st Embodiment, the vapor deposition material discharge | released from the vapor deposition source passes the opening part 25, and the vapor deposition pattern corresponding to the opening part 25 is formed in a vapor deposition target object. In addition, “one screen” includes an assembly of openings 25 corresponding to one product. When the one product is an organic EL display, it is necessary to form one organic EL display. An aggregate of organic layers, that is, an aggregate of openings 25 serving as an organic layer is “one screen”. And the vapor deposition mask 100 of 1st Embodiment arrange | positions the said "one screen" for several screens at predetermined intervals in the resin mask 20 in order to form the vapor deposition pattern for multiple screens simultaneously. . That is, the resin mask 20 is provided with openings 25 necessary for forming a plurality of screens.

  The vapor deposition mask of the first embodiment is formed by laminating a metal mask 10 provided with a plurality of slits 15 on one surface of a resin mask 20, and each slit is provided at a position overlapping at least one entire screen. It is characterized by that. In other words, between the openings 25 necessary to form one screen, between the openings 25 adjacent in the horizontal direction, the length of the slit 15 is the same as the length in the vertical direction, and the metal mask 10 There is a metal line part having the same thickness as that of the metal mask 10 or a metal line part having the same thickness as that of the metal mask 10 between the openings 25 adjacent in the vertical direction. It is characterized by not doing. Hereinafter, the same length as the length of the slit 15 in the vertical direction and the same thickness as the metal mask 10 or the length of the slit 15 in the horizontal direction and the same length as the metal mask 10 Metal wire portions having a thickness may be collectively referred to simply as metal wire portions.

  According to the vapor deposition mask 100 of the first embodiment, when the size of the opening 25 necessary to configure one screen and the pitch between the openings 25 configuring one screen are narrowed, for example, a screen exceeding 400 ppi. Therefore, even when the size of the openings 25 and the pitch between the openings 25 are extremely small, it is possible to prevent interference due to the metal line portion and to form a high-definition image. It becomes possible. In addition, when one screen is divided by a plurality of slits, in other words, when a metal line portion having the same thickness as the metal mask 10 exists between the openings 25 constituting one screen, As shown in FIGS. 11 (a) and 11 (b), as the pitch between the openings 25a constituting one screen becomes narrower, the metal line portion existing between the openings 25a is deposited on the deposition object. This makes it difficult to form a high-definition deposition pattern. In other words, when there is a metal line portion having the same thickness as the metal mask 10 between the openings 25 constituting one screen, the metal line portion causes the generation of a shadow and forms a high-definition screen. It becomes difficult. In addition, the shadow means that a part of the vapor deposition material released from the vapor deposition source collides with the inner wall surface of the slit 15 of the metal mask 10 and the inner wall surface of the metal wire portion and does not reach the vapor deposition target. This refers to a phenomenon in which an undeposited portion having a thickness thinner than the target deposition thickness occurs. In particular, as the shape of the opening 25 is miniaturized, the influence of the shadow due to the metal line portion existing between the openings 25 in one screen increases.

  Formation of a vapor deposition pattern on a vapor deposition object using a vapor deposition mask, for example, formation of a vapor deposition pattern on a glass substrate or silicon substrate, the vapor deposition object and the resin mask provided with an opening are opposed to each other. In such a state, the vapor deposition object and the vapor deposition mask are overlapped, and then the vapor deposition object and the vapor deposition mask 100 located in front of the vapor deposition object are attracted by the magnet disposed behind the vapor deposition object. Done. By the way, in the above-described vapor deposition mask configuration in which the metal line portion is not present between the openings 25 in one screen, the magnet is attached to the vapor deposition object and the vapor deposition mask only on the metal portion constituting the inner wall surface of the slit 15. Is called. In other words, the attraction by the magnet is performed only in the vicinity of the outer periphery of one screen or a plurality of screens.

  When the size of one screen that overlaps with one slit 15 is increased in the above-described magnet attracting mode, or when one slit 15 overlaps with a plurality of screens, By attracting only the vicinity of the periphery of one screen or a plurality of screens, each opening 25 constituting each screen and the deposition target cannot be sufficiently adhered, and each opening 25 and the deposition target There will be a gap between the two. This gap can be particularly prominent in the vicinity of the center position of the slit 15 where the influence of attraction by the magnet is small.

  If there is a gap between the vapor deposition object and the vapor deposition mask, in other words, if there is a gap between each opening 25 constituting one screen of the resin mask and the vapor deposition object. When forming the vapor deposition pattern on the vapor deposition object, the vapor deposition material traveling in the direction of the vapor deposition object turns around in a direction perpendicular to the traveling direction from the gap formed between the vapor deposition object and the vapor deposition mask. And, originally, the respective vapor deposition patterns to be formed with a predetermined interval are connected by the vapor deposition material that has circulated in the direction perpendicular to the traveling direction from the gap, or the vapor deposition pattern size is increased, etc. This causes problems and hinders the formation of high-definition deposition patterns. In addition, vapor deposition pattern fattening means the phenomenon in which the vapor deposition pattern of a shape larger than the target vapor deposition pattern is formed.

  Therefore, in the vapor deposition mask of the first embodiment, as shown in each drawing, a metal is formed on a region corresponding to the position overlapping with the slit 15 on one surface of the resin mask 20 or on the other surface of the resin mask 20. It is characterized in that a layer 40 is provided. According to the vapor deposition mask 100 of the first embodiment having this feature, when the metal layer 40 is provided in a region corresponding to the position overlapping the slit 15 on one surface of the resin mask 20, as shown in FIG. In the vicinity of the outer periphery of the screen, that is, not only in the metal portion of the metal mask 10 constituting the inner wall surface of the slit 15 but also in the periphery of each opening 25 existing in the slit 15, the metal layer 40 and the deposition object are deposited. The mask 100 can be attracted by a magnet. In summary, the deposition mask and the deposition object can be attracted in a wide range. Thereby, each opening part 25 provided in the resin mask 20 and a vapor deposition target object can fully be stuck, and generation | occurrence | production of a clearance gap can be prevented effectively. Moreover, since the thickness of the metal layer 40 is thinner than the thickness of the metal mask 10, the vapor deposition mask of 1st Embodiment provides the metal line part of the same thickness as the metal mask between the openings 25 of the resin mask 20. Compared with the deposited vapor deposition mask, it is less likely to cause shadows. Further, even when the metal layer 40 is provided on the other surface of the resin mask 20, it is possible to attract the vapor deposition object and the vapor deposition mask in the region where the metal layer 40 is provided, thereby preventing the generation of a gap. be able to. Therefore, according to the vapor deposition mask of the first embodiment, it is possible to form a high-definition vapor deposition pattern. Hereinafter, the metal layer 40 will be described. In addition, the metal layer 40 demonstrated below is the same also about the vapor deposition mask of 2nd Embodiment mentioned later.

  Although there is no limitation in particular about the material of the metal layer 40, it should just contain the magnetic material which can be attracted with a magnet. Invar materials that are pure iron, nickel, carbon steel, W steel, Cr steel, Co steel, KS steel, MK steel, NKS steel, Cunico steel, Al-Fe alloy, iron nickel alloy, iron nickel alloy as magnetic materials Etc. In addition, the metal layer 40 in the present invention may be composed of only a magnetic material, or may be a material in which a magnetic material is contained in a material that does not have magnetism. Examples of the material that does not have magnetism include a resin material. That is, the metal layer 40 only needs to have magnetism as a result. For example, a resin material serving as a binder in which a magnetic metal is dispersed can be used as the metal material of the metal layer 40.

  Although the thickness of the metal layer 40 is not particularly limited, it is an essential condition that the vapor deposition mask of the first embodiment is thinner than at least the thickness of the metal mask 10. This is because when the thickness of the metal layer 40 is the same as the thickness of the metal mask 10 or thicker than the thickness of the metal mask 10, the metal layer 40 causes the generation of shadows and the formation of a high-definition screen. By not being able to do.

  The thickness of the metal layer 40 is not particularly limited as long as it satisfies the condition that it is thinner than the thickness of the metal mask 10, but it is preferably 0.01 μm or more and 10 μm or less, and 0.05 μm or more and 5 μm or less. More preferably, it is 0.1 μm or more and 1 μm or less. At least by making the thickness thinner than the thickness of the metal mask 10, compared to the case where a metal line portion having the same thickness as the metal mask 10 or thicker than the thickness of the metal mask is present in one screen, The influence of shadow can be reduced.

  In the vapor deposition mask of the present embodiment, “the metal layer is provided in a region corresponding to the position overlapping with the slit on one surface of the resin mask” means that the position overlapping with the slit 15 on one surface of the resin mask. Does not mean that the entire surface of the “metal layer forming surface” is covered with the metal layer 40. That is, a region that is not covered with the metal layer 40 may exist on a part of the surface of the “metal layer forming surface”. In other words, a part of the surface of the “metal layer forming surface” may be exposed. The same applies to the vapor deposition mask of the second embodiment in which the metal layer 40 is provided on the resin mask corresponding to the position overlapping with one through-hole 16.

  For example, when the metal layer 40 is provided in a region corresponding to the position overlapping with the slit 15 on one surface of the resin mask 20, a metal is formed between the openings 25 adjacent in the lateral direction on the “metal layer forming surface”. A region not covered by the layer 40 may be present so as to extend in the vertical direction, or a region where the metal layer 40 is not provided may be provided so as to extend in the horizontal direction between the openings 25 adjacent in the vertical direction. Good. In the form shown in FIG. 5A, the “metal layer forming surface” which is a part of the surface of the resin mask 20 is exposed in the vertical direction between the openings 25 adjacent in the horizontal direction. The metal layer 40 is provided on the “metal layer forming surface”. In the form shown in FIG. 5B, the metal layer 40 is provided on the “metal layer forming surface” so that the “metal layer forming surface” which is a part of the surface of the resin mask 20 is exposed in a spot shape. Yes. Further, instead of the illustrated form, a plurality of metal layers 40 may be provided in a pattern on the “metal layer forming surface” with a predetermined interval. 5A and 5B are partial enlarged views showing an example in which one screen portion in FIG. 1 is enlarged.

  Depending on the thickness and material of the metal layer 40, there is a possibility that the dimension of the opening 25 provided in the resin mask 20 may vary due to the film stress of the metal layer 40. An area where the metal layer 40 is not provided exists on a part of the “surface”, in other words, the metal layer 40 is provided on the “metal layer formation surface” so that a part of the “metal layer formation surface” is exposed. Thus, the film stress due to the metal layer 40 can be reduced. This does not make the presence of the region where the metal layer 40 is not provided on the “metal layer forming surface” be an indispensable condition for reducing the film stress. By making the thickness within a preferable range, or by forming the metal layer 40 using a metal material having a small influence of the film stress, the influence of the film stress of the metal layer 40 can be reduced.

  In the case where the region where the metal layer 40 is not provided is present in a part on the “metal layer forming surface” as described above, the metal layer in contact with the “metal layer forming surface” occupies the total surface area of the “metal layer forming surface” When the ratio of the surface area of 40 is less than 10%, the adhesion between the vapor deposition mask of this embodiment and the vapor deposition object may be insufficient. Therefore, on the “metal layer forming surface”, when the total surface area of the “metal layer forming surface” is 100%, the area of the metal layer 40 in contact with the “metal layer forming surface” is 10% or more, particularly The metal layer 40 is preferably provided so as to be 50% or more. In addition, irrespective of the ratio of the area in which the metal layer 40 is provided, the adhesion to the object to be deposited is compared with the deposition mask in which the metal layer 40 is not provided, as much as the metal layer 40 is provided. And a high-definition deposition pattern can be formed using the deposition mask of the first embodiment.

  In the form shown in FIG. 2A, the metal layer 40 is provided only on the “metal layer forming surface”. However, the vapor deposition mask of the first embodiment is not limited to this form. As shown in FIG. 3, a metal layer 40 may be provided on the metal mask 10. Although not shown, the metal layer 40 may be provided on the inner wall surface of the slit 15 of the metal mask 10. Further, as shown in FIG. 4, the metal layer 40 can be provided not only on the “metal layer forming surface” but also between the resin mask 20 and the metal mask 10.

  In the above description, the example in which the metal layer 40 is provided on one surface of the resin mask, that is, on the surface of the resin mask 20 on the side in contact with the metal mask 10 has been mainly described. As described above, the metal layer 40 can be provided on the other surface of the resin mask 20. Further, the metal layer 40 can be provided on both the surface corresponding to the position overlapping with the slit 15 (“metal layer forming surface”) on one surface of the resin mask 20 and the other surface of the resin mask ( Not shown).

  The vapor deposition mask is attracted so that the other surface of the resin mask and the object to be vapor-deposited face each other. Therefore, when the metal layer 40 is provided on the other surface of the resin mask 20, the metal layer When the smoothness of 40 is low, a gap is generated between the vapor deposition mask 100 and the vapor deposition object depending on the case where the adhesion between the vapor deposition mask 100 and the vapor deposition object is insufficient or depending on the smoothness. Concern can arise. Further, as the thickness of the metal layer 40 is increased, the gap between the vapor deposition mask and the vapor deposition object is increased, and the pattern accuracy to be formed tends to be lowered. Therefore, when the metal layer 40 is provided on the other surface of the resin mask 20, it is preferable to provide the metal layer 40 with high smoothness in consideration of this point. The preferable thickness of the metal layer 40 when the metal layer 40 is provided on the other surface of the resin mask 20 is the same as the preferable thickness described in the case where the metal layer 40 is provided on the “metal layer forming surface”. In addition, the form in which the metal layer 40 is provided on the “metal layer forming surface” which is one surface of the vapor deposition mask allows the vapor deposition mask 100 and the vapor deposition object to be closely adhered to each other regardless of the smoothness of the metal layer 40. It can be said that it is a preferable form in that it can be made.

  Further, when the metal layer 40 is formed on the other surface of the resin mask 20 and there is a region where the metal layer 40 is not provided on a part of the other surface, the vapor deposition mask and the vapor deposition are formed in the region. A gap is generated between the object and the object. Therefore, when the metal layer 40 is provided on the other surface of the resin mask 20, at least on the surface corresponding to the area constituting each screen of the other surface of the resin mask 20, at least FIG. As shown in FIG. 2, it is preferable that the metal layer 40 is provided in the vicinity of the opening 25 on the other surface of the resin mask 20.

  In the present invention, since the resin mask 20 is used as the configuration of the vapor deposition mask 100, when the vapor deposition is performed using the vapor deposition mask 100, very high heat is applied to the opening 25 of the resin mask 20. Further, gas may be generated from an end face (inner wall surface of the opening 25) (see FIG. 9) that forms the opening 25 of the resin mask 20, and there is a possibility that the degree of vacuum in the vapor deposition apparatus is reduced. Therefore, considering this point, it is preferable that a metal layer 40 is also provided on the end surface of the resin mask 20 where the opening 25 is formed, as shown in FIG. By providing the metal layer 40 on the end face where the opening 25 is formed, it is possible to prevent gas from being generated from the end face where the opening 25 of the resin mask 20 is formed.

  Instead of providing the metal layer 40 on the end face where the opening 25 of the resin mask 20 is formed as described above, a layer different from the metal layer 40, for example, on the end face where the opening 25 of the resin mask 20 is formed, for example, An inorganic oxide layer or an inorganic nitride layer can also be provided. Providing these layers can also prevent gas from being generated from the end face where the opening 25 is formed. As the inorganic oxide, for example, an oxide such as silicon, indium, or tin can be used.

  In the vapor deposition mask of the form shown in each figure (FIG. 2 (a), FIG. 3, FIG. 9), the metal layer 40 formed in the position which overlaps with the slit 15 on one surface of the resin mask 20 is the slit 15's. Although in contact with the inner wall surface, as shown in FIG. 22, the metal layer 40 formed at a position overlapping the slit 15 on one surface of the resin mask 20 is not in contact with the inner wall surface of the slit 15. Is preferred. This is because, when the inner wall surfaces of the metal layer 40 and the slit 15 are in contact with each other, the contacted portion becomes a so-called “peeling trigger”, and when the evaporation mask is used repeatedly or when the evaporation mask is cleaned. This is because the metal layer 40 in contact with the inner wall surface of the slit 15 tends to easily fall off from the vapor deposition mask. On the other hand, the vapor deposition mask 100 according to a preferred embodiment can prevent the metal layer 40 from dropping from the vapor deposition mask 100 because the inner wall surface of the slit 15 and the metal layer 40 are not in contact with each other. In addition, when the metal layer 40 is removed from the deposition mask 100, the removed metal layer 40 acts as a foreign substance, which may hinder the production of a high-definition deposition pattern, or the metal layer 40 may have fallen off. In the portion, the adhesion between the vapor deposition mask and the vapor deposition object is lowered. This also applies to the second embodiment and other embodiments described later. In the vapor deposition mask of the second embodiment, the description of the slit 15 may be read as one through hole 16. FIG. 22 is a modification of the AA cross-sectional view of the vapor deposition mask shown in FIG. 1, and this embodiment can also be applied to the vapor deposition mask 100 of the second embodiment shown in FIG. 14 and FIG.

  The vapor deposition mask of the form shown in FIG. 4 is provided with a metal layer 40 between the resin mask 20 and the metal mask 10, and the inner wall surfaces of the metal layer 40 and the slit 15 do not contact each other. Also in the vapor deposition mask 100, the drop-off of the metal layer 40 can be suppressed similarly to the vapor deposition mask shown in FIG. When the metal layer 40 is provided on the other surface of the resin mask 20, the metal layer 40 does not contact the inner wall surface of the slit 15. In this case, the inner wall surface of the slit and the metal layer 40 are not in contact with each other. The above-mentioned problem that the metal layer 40 easily falls off due to the contact does not occur.

  Next, an example of a method for forming the metal layer 40 will be described. In addition, the metal layer 40 in the vapor deposition mask of this embodiment is not limited to what was formed by this method, A metal layer on the "metal layer formation surface" or the other surface of the resin mask 20 Various methods that can provide 40 can be used. Hereinafter, the method for forming the metal layer 40 on the “metal layer forming surface” will be mainly described.

  As a method for forming the metal layer 40 as an example, a laminate in which a resin mask provided with an opening 25 and a metal mask provided with a plurality of slits 15 at positions overlapping the opening is prepared, In this method, the metal layer 40 is formed by attaching a metal material to the surface of the resin mask through a slit from the metal mask side of the laminate. According to this method, a vapor deposition mask having the form shown in FIG. 3 can be obtained. Examples of the method for attaching a metal material to the surface of the resin mask include various PVD methods such as a vacuum deposition method, a sputtering method, and an ion plating method, a CVD method, and a plating method.

  As another example of the formation method of the metal layer 40, the metal layer 40 is formed on a resin plate, and the metal layer 40 is formed from the metal layer 40 side using a conventionally known method such as a laser processing method or an etching method. A through-hole penetrating the metal layer 40 and the resin plate 30 is formed from the 40 side. This through hole corresponds to the opening 25 of the resin mask. Thereby, the metal layer 40 in which the through-hole corresponding to the opening part 25 of the resin mask 20 was provided in the surface of the resin mask 20 is obtained. Then, by laminating the resin mask 20 provided with the metal layer 40 on the surface and the metal mask provided with the slit 15 so that the metal layer 40 and the metal mask 10 face each other, the configuration shown in FIG. A vapor deposition mask can be obtained. Further, after forming a metal layer on the other surface of the resin plate, a through-hole penetrating the resin plate 30 and the metal layer 40 is formed from one surface side of the resin plate, and the metal layer 40 of the resin mask 20 is provided. By laminating so that the surface on the side not provided and the metal mask 10 face each other, the vapor deposition mask 100 having the form shown in FIG. 2B can be obtained. As a method for forming the metal layer 40 on the resin plate, it can be formed by using various coating methods in addition to the above-described vacuum deposition method, sputtering method, various PVD methods, and CVD methods. In various coating methods, a coating liquid in which a metal material is dispersed in a binder resin or the like is used. Moreover, the metal layer 40 can also be formed on a resin board by bonding metal foil on a resin board. In the case where the opening 25 is formed in the resin plate using the etching processing method, the etching material that can form the opening 25 in the resin plate is a material that can erode the material of the metal layer 40. In this case, a single etching material can be used to form the metal layer 40 and a through-hole serving as the opening 25 in the resin plate. On the other hand, when the etching material that can form the opening 25 in the resin plate is a material that cannot erode the material of the metal layer 40, the etching material that can erode the material of the metal layer 40 is used. A through-hole corresponding to the opening is formed in the layer 40, and then the resin plate is etched using an etching material that can erode the resin plate using the metal layer 40 with the through-hole formed as an anti-etching mask. Thus, the opening 25 can be formed in the resin plate. On the other hand, according to the laser processing method, a through hole penetrating the metal layer 40 and the resin plate can be formed at a time.

  According to the vapor deposition mask 100 of 1st Embodiment demonstrated above, weight reduction can be achieved compared with the conventional vapor deposition mask. Specifically, when comparing the mass of the vapor deposition mask 100 of the first embodiment with the mass of a vapor deposition mask made of only a conventionally known metal, assuming that the thickness of the entire vapor deposition mask is the same, The mass of the vapor deposition mask 100 of the first embodiment is reduced by replacing the metal material of the known vapor deposition mask with a resin material. In addition, in order to reduce the weight by using a vapor deposition mask made of only metal, it is necessary to reduce the thickness of the vapor deposition mask. However, if the vapor deposition mask is thin, When the size is increased, the vapor deposition mask may be distorted or the durability may be reduced. On the other hand, according to the vapor deposition mask of 1st Embodiment, even when it is a case where the thickness of the whole vapor deposition mask is made thick in order to satisfy the distortion | strain when it enlarged, and durability, presence of the resin mask 20 exists. Thus, the weight can be reduced as compared with the vapor deposition mask formed of only metal. The same applies to the vapor deposition mask of the second embodiment described later. Each will be described in detail below.

(Resin mask in the first embodiment)
For the resin mask 20, a conventionally known resin material can be appropriately selected and used, and the material is not particularly limited. However, a high-definition opening 25 can be formed by laser processing or the like. It is preferable to use a lightweight material having a small dimensional change rate and moisture absorption rate. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene- Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, and ionomer resin. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both conditions is particularly preferable. . In the vapor deposition mask of the first embodiment, the resin mask 20 is made of a resin material capable of forming the openings 25 with higher definition than the metal material as described above. Therefore, the vapor deposition mask 100 having the high-definition opening 25 can be obtained. The same applies to the vapor deposition mask of the second embodiment described later.

  The thickness of the resin mask 20 is not particularly limited, but when vapor deposition is performed using the vapor deposition mask 100 of the first embodiment, there is a vapor deposition portion that is thinner than the target vapor deposition film thickness, so-called shadow. In order to prevent the occurrence, the resin mask 20 is preferably as thin as possible. However, when the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation and the like increases. On the other hand, if it exceeds 25 μm, shadows may occur. Considering this point, the thickness of the resin mask 20 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin mask 20 within this range, it is possible to reduce the risk of defects such as pinholes and deformation, and to effectively prevent the generation of shadows. In particular, by setting the thickness of the resin mask 20 to 3 μm or more and less than 10 μm, more preferably 4 μm or more and 8 μm or less, it is possible to more effectively prevent the influence of shadows when forming a high-definition pattern exceeding 400 ppi. . In addition, in the vapor deposition mask 100 of 1st Embodiment, although the metal mask 10 and the resin mask 20 may be joined directly and may be joined via the adhesive layer, an adhesive layer is used. When the metal mask 10 and the resin mask 20 are joined together, the total thickness of the resin mask 20 and the pressure-sensitive adhesive layer is 3 μm or more and 25 μm or less, preferably 3 μm or more and 10 μm, in consideration of the shadow point. It is preferable to set it within a range of 4 μm or more and 8 μm or less. The same applies to the resin mask of the vapor deposition mask of the second embodiment described later.

  Moreover, since the vapor deposition mask 100 of the first embodiment has a configuration in which the resin mask 20 and the metal mask 10 are laminated, the presence of the metal mask 10 improves the durability of the vapor deposition mask as a whole. Thus, handling performance, and prevention of breakage and deformation are achieved.

  Next, an example of the opening 25 constituting one screen will be described with reference to FIGS. 1 and 6 to 8. In the form shown in the figure, a region closed by a broken line is one screen. In the illustrated form, for convenience of description, a small number of openings 25 are aggregated as one screen. However, the present invention is not limited to this form. For example, when one opening 25 is defined as one pixel, one screen There may be an opening 25 of several million pixels.

  In the form shown in FIG. 1, one screen is constituted by an aggregate of openings 25 in which a plurality of openings 25 are provided in the vertical direction and the horizontal direction. In the form shown in FIG. 6, one screen is constituted by an aggregate of openings 25 in which a plurality of openings 25 are provided in the horizontal direction. Moreover, in the form shown in FIG. 7, one screen is constituted by an aggregate of openings 25 in which a plurality of openings 25 are provided in the vertical direction. 1, 6, and 7, a slit 15 is provided at a position that overlaps the entire screen. Further, a metal layer 40 is provided on a region corresponding to a position overlapping with each metal slit 15 on one surface of the resin mask 20, that is, on the “metal layer forming surface” of the resin mask 20 described above. ing.

  As described above, the slit 15 may be provided at a position overlapping only one screen, or as illustrated in FIGS. 8A and 8B, provided at a position overlapping two or more entire screens. It may be. 8A, in the resin mask 10 shown in FIG. 1, a slit 15 is provided at a position that overlaps the entire two screens that are continuous in the horizontal direction. In FIG. 8B, the slit 15 is provided at a position overlapping the entire three screens that are continuous in the vertical direction.

Next, taking the form shown in FIG. 1 as an example, the pitch between the openings 25 constituting one screen and the pitch between the screens will be described. There is no particular limitation on the pitch between the openings 25 constituting one screen and the size of the openings 25, and they can be set as appropriate according to the pattern to be deposited. For example, when forming a high-definition deposition pattern of 400 ppi, the horizontal pitch (P1) and vertical pitch (P2) of the adjacent openings 25 in the openings 25 constituting one screen are about 60 μm. It becomes. The size of the opening becomes 500μm ² ~1000μm ² about. In addition, one opening 25 is not limited to corresponding to one pixel. For example, depending on the pixel arrangement, a plurality of pixels can be integrated into one opening 25.

  There is no particular limitation on the horizontal pitch (P3) and the vertical pitch (P4) between the screens, but as shown in FIG. 1, when one slit 15 is provided at a position overlapping the entire screen, A metal line portion exists between the screens. Accordingly, the vertical pitch (P4) and horizontal pitch (P3) between the screens are smaller than the vertical pitch (P2) and horizontal pitch (P1) of the openings 25 provided in one screen. In this case, or when they are substantially equivalent, the metal wire portion existing between the screens is easily broken. Therefore, in consideration of this point, it is preferable that the pitch (P3, P4) between the screens is wider than the pitch (P1, P2) between the openings 25 constituting one screen. An example of the pitch (P3, P4) between the screens is about 1 mm to 100 mm. Note that the pitch between the screens means a pitch between adjacent openings in one screen and another screen adjacent to the one screen. The same applies to the pitch of the openings 25 and the pitch between the screens in the vapor deposition mask of the second embodiment to be described later.

  8A and 8B, when one slit 15 is provided at a position overlapping two or more entire screens, a plurality of slits 15 provided in one slit 15 are provided. Between the screens, there is no metal wire portion that constitutes the inner wall surface of the slit. Therefore, in this case, the pitch between two or more screens provided at a position overlapping with one slit 15 may be substantially equal to the pitch between the openings 25 constituting one screen.

  The cross-sectional shape of the opening 25 is not particularly limited, and the end faces facing each other of the resin mask forming the opening 25 may be substantially parallel to each other. However, as shown in FIGS. 25 is preferably a shape whose cross-sectional shape has an extension toward the vapor deposition source. In other words, it is preferable to have a tapered surface that expands toward the metal mask 10 side. By setting the cross-sectional shape of the opening 25 to the configuration, it is possible to prevent a shadow from being generated in the pattern to be deposited when vapor deposition is performed using the vapor deposition mask of the first embodiment. The taper angle can be appropriately set in consideration of the thickness of the resin mask 20 and the like, but the angle between the bottom end of the bottom of the resin mask and the top of the top of the resin mask is 5 It is preferably within the range of ° to 85 °, more preferably within the range of 15 ° to 80 °, and even more preferably within the range of 25 ° to 65 °. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable. Furthermore, in FIG. 2 to FIG. 4 and FIG. 9, the end surface forming the opening 25 has a linear shape, but is not limited to this, and has an outwardly convex curved shape. That is, the entire shape of the opening 25 may be a bowl shape. The opening 25 having such a cross-sectional shape is, for example, a multi-stage laser that appropriately adjusts the laser irradiation position and laser irradiation energy when the opening 25 is formed, or changes the irradiation position in stages. It can be formed by irradiation. The same applies to the vapor deposition mask of the second embodiment described later.

  Since a resin material is used for the resin mask 20, the opening 25 can be formed regardless of a processing method used in conventional metal processing, for example, a processing method such as an etching method or cutting. That is, the forming method of the opening 25 is not particularly limited, and the opening is made using various processing methods, for example, a laser processing method capable of forming the high-definition opening 25, precision press processing, photolithography processing, or the like. The portion 25 can be formed. The same applies to the vapor deposition mask of the second embodiment described later. A method of forming the opening 25 by a laser processing method or the like will be described later.

  Etching methods include, for example, a wet etching method such as a spray etching method in which an etching material is sprayed from a spray nozzle at a predetermined spray pressure, an immersion etching method in an etching solution filled with the etching material, or a spin etching method in which an etching material is dropped. An etching method or a dry etching method using gas, plasma, or the like can be used.

  FIG. 10 is a front view of another embodiment of the resin mask, in which the metal mask 10 and the metal layer 40 are omitted. As shown in FIG. 10, the resin mask 20 is preferably formed with a groove 28 extending in the vertical direction or the horizontal direction (vertical direction in the case of FIG. 10) of the resin mask 20. When heat is applied at the time of vapor deposition, the resin mask 20 may thermally expand, which may cause a change in the size and position of the opening 25. However, by forming the groove 28, the expansion of the resin mask is absorbed. It is possible to prevent the resin mask 20 from expanding in a predetermined direction as a whole and accumulating the thermal expansion occurring at various portions of the resin mask and changing the size and position of the opening 25. Moreover, the film stress of the metal layer 40 can be reduced by providing the metal layer 40 on the resin mask 20 in which the groove 28 is formed. The formation position of the groove 28 is not limited, and the groove 28 may be provided between the openings 25 constituting one screen or at a position overlapping with the openings 25, but is preferably provided between the vertical screens. Further, the groove 28 may be provided only on one surface of the resin mask, for example, the surface on the side in contact with the metal mask, or may be provided only on the surface on the side not in contact with the metal mask. Alternatively, it may be provided on both surfaces of the resin mask 20.

  In FIG. 10, the grooves 28 extending in the vertical direction are formed between adjacent screens, but the present invention is not limited to this, and grooves extending in the horizontal direction may be formed between adjacent screens. Furthermore, it is possible to form the grooves in a combination of these.

  The depth and width of the groove 28 are not particularly limited. However, if the depth of the groove 28 is too deep or too wide, the rigidity of the resin mask 20 tends to decrease. It is necessary to set in consideration of Further, the cross-sectional shape of the groove is not particularly limited, and may be arbitrarily selected in consideration of a processing method such as a U shape or a V shape. The groove 28 can be similarly applied to the vapor deposition mask of the second embodiment.

(Metal mask in the first embodiment)
The metal mask 10 is made of metal and has a plurality of slits 15. In the vapor deposition mask of the first embodiment, as described above, each slit 15 is provided at a position that overlaps at least one entire screen. In other words, the opening 25 constituting one screen is provided at a position overlapping with one slit 15. The slit 15 is synonymous with the opening.

  Next, referring to FIG. 11A to FIG. 11D, the generation of shadows, the generation of shadows that may be caused by the thickness of the metal mask 10, and slits are provided at positions that overlap at least one entire screen. The superiority of the vapor deposition mask 100 of one embodiment will be described. FIG. 11A is a partially enlarged cross-sectional view of a vapor deposition mask in which an opening 25a constituting one screen is divided by a plurality of slits 15a, and FIG. It is a partial expanded sectional view which shows the state which made the thickness of the metal mask thick in the vapor deposition mask shown to). FIG. 11C is a partially enlarged cross-sectional view showing an example of the vapor deposition mask 100 of the first embodiment in which one slit 15 is provided at a position overlapping the entire screen. FIG.11 (d) is the elements on larger scale which show the state which made the thickness of the metal mask 10 thick in the vapor deposition mask 100 in FIG.11 (c). Further, in the illustrated form, an aggregate of openings 25 provided with five openings in the horizontal direction (the vertical direction is arbitrary) is used as one screen.

  As shown in FIG. 11A, when the opening 25a constituting one screen is divided by a plurality of slits 15a, the metal that forms the wall surface of the slit 15a in a part between the adjacent openings 25a. A line part will exist. In the case where the pitch of the openings 25a and the shape of the openings 25a are miniaturized in order to form a high-definition deposition pattern, a metal line portion exists between the openings 25a constituting one screen. In this case, the metal line portion prevents the vapor deposition material emitted from the vapor deposition source from passing through the opening 25a, and it becomes difficult to produce a high-definition vapor deposition pattern. Further, when the thickness of the metal mask 10a is reduced, the durability of the entire vapor deposition mask is also lowered. In order to improve the durability of the entire deposition mask, when the thickness of the metal mask 10a is increased as shown in FIG. 11B, the deposition material released from the deposition source is more It becomes easy to collide with the inner wall surface. As the amount of the vapor deposition material that collides with the inner wall surface of the metal wire portion increases, the amount of the vapor deposition material that cannot reach the vapor deposition target increases, and the generation of shadows becomes more prominent.

  On the other hand, in the vapor deposition mask of the first embodiment, as shown in FIG. 11C, the entire one screen, that is, all the openings 25 provided in one screen overlap with one slit 15. Is provided. Furthermore, on the surface of the resin mask 20 that overlaps with the slit 15, that is, on the metal layer 40 provided on the “metal layer forming surface”, or on the other surface of the resin mask 20 as shown in FIG. Since the metal layer 40 provided in is thinner than the metal mask, the vapor deposition material can be passed through the opening 25 without waste as shown in FIG. be able to. Further, as shown in FIG. 11D, even when the thickness of the metal mask 10 is increased to some extent, the influence of the shadow is small, and a high-definition deposition pattern can be formed. In particular, in the present invention, even when the thickness of the metal mask 10 is about 100 μm, the generation of shadows can be prevented. Furthermore, with the form shown to FIG.11 (c), (d), a vapor deposition mask and a vapor deposition target object can be closely_contact | adhered using the metal layer 40 without gap. In addition, since the durability of the vapor deposition mask 100 as a whole is improved by increasing the thickness of the metal mask 10, the vapor deposition mask of the first embodiment enables the formation of a high-definition vapor deposition pattern, but its thickness. The durability can be improved by appropriately setting. That is, according to the vapor deposition mask of this embodiment shown in FIGS. 2-4, FIG.11 (c), (d), compared with the vapor deposition mask of the form shown to FIG.11 (a), (b), vapor deposition material. It is possible to suppress the occurrence of shadows with little or no influence due to the collision of the film, and to adhere the vapor deposition mask and the vapor deposition object in this form without gaps using the metal layer 40.

  The thickness of the metal mask 10 is not particularly limited, but it is preferably 100 μm or less, more preferably 50 μm or less, and particularly preferably 35 μm or less in order to more effectively prevent the occurrence of shadows. preferable. When the thickness is less than 5 μm, the risk of breakage and deformation increases and handling tends to be difficult. The same applies to the metal mask of the second embodiment.

  In addition, in the vapor deposition mask 100 of the first embodiment, in order to sufficiently prevent the occurrence of shadows, as shown in FIGS. 2 to 4 and 9, the cross-sectional shape of the slit 15 is expanded toward the vapor deposition source. It is preferable to have a shape having With such a cross-sectional shape, even if the thickness of the entire deposition mask is increased for the purpose of preventing distortion that may occur in the deposition mask 100 or improving durability, it is emitted from the deposition source. The deposited material can reach the deposition object without colliding with the surface of the slit 15 or the inner wall surface of the slit 15. More specifically, the angle formed by the straight line connecting the lower bottom tip of the slit 15 of the metal mask 10 and the upper bottom tip of the slit 15 of the metal mask 10 and the bottom surface of the metal mask 10 is 5 ° to 85 °. It is preferably within the range, more preferably within the range of 15 ° to 80 °, and even more preferably within the range of 25 ° to 65 °. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable. With such a cross-sectional shape, even if the thickness of the metal mask 10 is relatively thick for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or improving durability, the metal is released from the vapor deposition source. The vapor deposition material can reach the vapor deposition object without colliding with the inner wall surface of the slit 15. As a result, the occurrence of shadows can be more effectively prevented. In addition, although the end surface which the opening part 25 of the resin mask 20 faces may be substantially parallel, as demonstrated above. Both the slit 15 of the metal mask 10 and the opening 25 of the resin mask 20 preferably have a shape in which the cross-sectional shape expands toward the vapor deposition source side. The same applies to the metal mask of the second embodiment.

  In the illustrated embodiment, the opening shape of the slit 15 has a rectangular shape, but the opening shape is not particularly limited, and the opening shape of the slit 15 may be any shape such as a trapezoidal shape or a circular shape. . The same applies to the opening shape of the slit 15 of the metal mask of the second embodiment.

  The material of the metal mask 10 is not particularly limited, and any conventionally known material can be appropriately selected and used in the field of the evaporation mask, and examples thereof include metal materials such as stainless steel, iron-nickel alloy, and aluminum alloy. . Among them, an invar material that is an iron-nickel alloy can be suitably used because it is less deformed by heat. The metal mask 10 and the metal layer 40 may be made of the same material or different materials. The same applies to the metal mask of the second embodiment.

  FIG. 12 is a front view showing another aspect of the vapor deposition mask 100 of the first embodiment. As shown in FIG. 12, in the front view seen from the metal mask 10 side of the vapor deposition mask 100, the openings 25 constituting one screen may be alternately arranged in the horizontal direction. In other words, the openings 25 adjacent in the horizontal direction may be shifted in the vertical direction. By arranging in this way, even when the resin mask 20 is thermally expanded, the expansion generated in various places can be absorbed by the opening 25, and the expansion is prevented from accumulating and causing a large deformation. Can do. The same applies to the vapor deposition mask of the second embodiment described later.

<Deposition Mask of Second Embodiment>
Next, the vapor deposition mask of 2nd Embodiment is demonstrated. As shown in FIGS. 13 and 14, the vapor deposition mask according to the second embodiment of the present invention has one penetration on one surface of the resin mask 20 provided with a plurality of openings 25 corresponding to the pattern to be produced by vapor deposition. The metal mask 10 provided with the holes 16 is laminated, and all of the plurality of openings 25 are provided at positions overlapping one through-hole provided in the metal mask 10. Furthermore, the vapor deposition mask of the second embodiment has a region corresponding to a position overlapping one through-hole 16 on one surface of the resin mask and the other surface of the resin mask, on one or both surfaces. The metal layer 40 having a thickness smaller than that of the metal mask 10 is provided. The opening 25 referred to in the vapor deposition mask of the second embodiment means an opening necessary for forming the vapor deposition pattern on the vapor deposition object, and is not necessary for forming the vapor deposition pattern on the vapor deposition target. May be provided at a position that does not overlap one through-hole 16. FIG. 13 is a front view of the vapor deposition mask showing an example of the vapor deposition mask of the second embodiment as seen from the metal mask side, and FIG. 14 is a cross-sectional view taken along the line BB of the vapor deposition mask shown in FIG.

  According to the vapor deposition mask 100 of 2nd Embodiment, since the metal mask 10 is provided on one surface of the resin mask 20, durability and handling property of the vapor deposition mask 100 can be improved. In addition, when it is set as the vapor deposition mask which consists only of a resin mask, without providing the metal mask 10 on the resin mask 20, durability and handling property of a vapor deposition mask will fall. In particular, in order to form a high-definition vapor deposition pattern, it is preferable that the thickness of the resin mask is thin, and when the thickness of the resin mask is reduced, the durability of the vapor deposition mask consisting only of the resin mask is reduced. The handling performance will be further reduced.

  Specifically, in the vapor deposition mask 100 of the second embodiment, as shown in FIGS. 18A and 18B, there is no metal line portion that forms the wall surface of the through hole 16 between the openings 25. As a result, it is possible to form a high-definition vapor deposition pattern. Further, since the metal line portion forming the wall surface of the through hole 16 is located near the end of the vapor deposition mask 100, it is possible to form a high-definition vapor deposition pattern without affecting the formation of the vapor deposition pattern. It becomes.

  Moreover, according to the vapor deposition mask of 2nd Embodiment, even if it is a case where the thickness of the metal mask 10 is made thick as shown in FIG.18 (b), it is hardly influenced by a shadow. Thus, the thickness of the metal mask 10 can be increased until the durability and handling properties can be sufficiently satisfied, and the durability and handling properties can be improved while enabling the formation of a high-definition deposition pattern. Can be improved.

  Also in the vapor deposition mask of the second embodiment, as with the vapor deposition mask of the first embodiment, the presence of the metal mask 10 is sufficient for the vapor deposition mask 100 even when the thickness of the resin mask 20 is reduced. Durability and handling properties can be imparted. Moreover, according to the vapor deposition mask 100 of 2nd Embodiment, the weight reduction of a vapor deposition mask can be achieved. These reasons are the same as those explained in the vapor deposition mask of the first embodiment.

  In the vapor deposition mask 100 of the second embodiment, the metal mask 10 having one through hole 16 is provided on the resin mask 20 having the plurality of openings 25, and all of the plurality of openings 25 are It is provided at a position overlapping with the one through hole 16. In the vapor deposition mask 100 of the second embodiment having this configuration, there is no metal line portion between the openings 25 that is the same as the thickness of the metal mask or thicker than the thickness of the metal mask. As described in the vapor deposition mask of the embodiment, it is possible to form a high-definition vapor deposition pattern according to the size of the opening 25 provided in the resin mask 20 without receiving interference from the metal line portion.

  Further, as described above, similarly to the vapor deposition mask of the first embodiment, also in the vapor deposition mask 100 of the second embodiment, on one surface of the resin mask 20 corresponding to the position overlapping with one through hole 16, That is, on the "metal layer forming surface" referred to in the vapor deposition mask of the first embodiment, or on the other surface of the resin mask 20, or on the "metal layer forming surface" and on the other surface of the resin mask 20. A metal layer 40 is provided on both surfaces. Therefore, also in the vapor deposition mask of the second embodiment, it is possible to prevent the occurrence of a gap that may be generated between the vapor deposition object and the vapor deposition mask 100. In other words, the vapor deposition object and the opening 25 can be sufficiently adhered. Thereby, also in the vapor deposition mask 100 of 2nd Embodiment, formation of a high-definition vapor deposition pattern is attained. Moreover, also in the vapor deposition mask of 2nd Embodiment, as shown to Fig.18 (a), (b), on the area | region corresponding to the position which overlaps with the one through-hole 16 among the one surfaces of the resin mask 20. FIG. The thickness of the provided metal layer 40 is on condition that the thickness is thinner than the metal mask 15 provided with the through holes 16. The same applies to the thickness of the metal layer 40 when the metal layer 40 is provided on the other surface of the resin mask 20. Therefore, according to the vapor deposition mask of the second embodiment, a vapor deposition mask having a metal line portion that is the same as or thicker than the metal mask between the openings 25 (see FIG. 11B of the first embodiment). As compared with the above, it is possible to reduce the influence of the shadow and to obtain a vapor deposition mask capable of forming a high-definition vapor deposition pattern. As long as there is no notice in particular about the metal layer 40, what was demonstrated with the vapor deposition mask of the said 1st Embodiment can be used as it is, and detailed description here is abbreviate | omitted.

  For example, in the form shown in FIG. 14, the metal layer 40 is provided only on the resin mask 20 that overlaps with one through-hole 16. However, as described in the vapor deposition mask of the first embodiment, the metal mask is used. The metal layer 40 may be provided on 10 (refer FIG. 3 of 1st Embodiment). Further, the metal layer 40 may be provided on the inner wall surface of the through hole 16 of the metal mask 10. Moreover, the metal layer 40 can also be provided between the resin mask 20 and the metal mask 10 (refer FIG. 4 of 1st Embodiment). Moreover, the metal layer 40 or the layer of an inorganic oxide or an inorganic nitride can also be provided in the edge part (inner wall surface of the opening part 25) of the opening part 25 (refer FIG. 9 of 1st Embodiment).

  Similarly to the vapor deposition mask of the first embodiment, in the vapor deposition mask of the second embodiment, a region that is not covered by the metal layer 40 may be present in a part on the “metal layer forming surface” (the first layer). FIG. 5 of one embodiment). In this case, on the “metal layer forming surface”, when the total surface area of the “metal layer forming surface” is 100%, the area of the metal layer 40 in contact with the “metal layer forming surface” is 10% or more, particularly It is preferable that the metal layer 40 is provided so as to be 50% or more.

  In the vapor deposition mask of the second embodiment, the metal layer 40 can also be provided on the other surface of the resin mask 20. The metal layer 40 can also be provided on both the “metal layer forming surface” and the other surface of the resin mask. The configuration in which the metal layer 40 is provided on the other surface of the resin mask 20 is the same as that described in the vapor deposition mask of the first embodiment, and detailed description thereof is omitted here.

(Resin mask in the second embodiment)
The resin mask 20 in the vapor deposition mask of the second embodiment is made of resin, and as shown in FIGS. 13 and 14, a plurality of openings 25 corresponding to the pattern for vapor deposition are provided at positions overlapping one through-hole 16. ing. The opening 25 corresponds to a pattern to be produced by vapor deposition, and the vapor deposition material released from the vapor deposition source passes through the opening 25 so that a vapor deposition pattern corresponding to the opening 25 is formed on the vapor deposition target. The In the illustrated embodiment, an example in which the openings are arranged in a plurality of rows in the vertical and horizontal directions is described. However, the openings may be arranged only in the vertical or horizontal direction.

  There is no particular limitation on the shape and size of the opening 25, and any shape and size corresponding to the pattern to be deposited may be used.

  The vapor deposition mask 100 of 2nd Embodiment may be used for formation of the vapor deposition pattern corresponding to 1 screen, and may be used for simultaneous formation of the vapor deposition pattern corresponding to two or more screens. . “One screen” in the vapor deposition mask of the second embodiment means an aggregate of openings 25 corresponding to one product, and when the one product is an organic EL display, one organic EL display. An aggregate of organic layers necessary to form the film, that is, an aggregate of the openings 25 serving as the organic layer is “one screen”. In this case, as shown in FIG. 15, it is preferable that the openings 25 are provided at predetermined intervals for each screen unit. In FIG. 15, an area enclosed by a broken line is “one screen”. In FIG. 15, one screen is constituted by twelve openings 25, but is not limited to this form. For example, when one opening 25 is one pixel, millions of One screen can be constituted by the opening 25. As an example of the pitch between the screens, both the vertical pitch and the horizontal pitch are about 1 mm to 100 mm. Note that the pitch between the screens means a pitch between adjacent openings in one screen and another screen adjacent to the one screen.

(Metal mask in the second embodiment)
The metal mask 10 in the vapor deposition mask 100 of the second embodiment is made of metal and has one through hole 16. In the present invention, when the one through hole 16 is viewed from the front of the metal mask 10, the position overlaps all the openings 25, in other words, all the openings 25 arranged in the resin mask 20. It is placed in a visible position.

  Metal parts constituting the metal mask 10, that is, parts other than the through holes 16 may be provided along the outer edge of the vapor deposition mask 100 as shown in FIGS. 13 and 14, and as shown in FIGS. Alternatively, the size of the metal mask 10 may be made smaller than that of the resin mask 20 to expose the outer peripheral portion of the resin mask 20. FIG. 17 is a B1-B1 sectional view of the vapor deposition mask shown in FIG. Further, the size of the metal mask 10 may be made larger than that of the resin mask 20, and a part of the metal portion may protrude outward in the horizontal direction or in the vertical direction of the resin mask. In any case, the size of the through hole 16 is configured to be smaller than the size of the resin mask 20.

  Although there is no particular limitation on the width (W1) in the horizontal direction and the width (W2) in the vertical direction of the metal portion forming the wall surface of the through hole of the metal mask 10 shown in FIG. 13, the widths of W1 and W2 are reduced. As time goes on, durability and handling properties tend to decrease. Therefore, it is preferable that W1 and W2 have widths that can sufficiently satisfy durability and handling properties. An appropriate width can be set as appropriate according to the thickness of the metal mask 10, but as an example of a preferable width, both W1 and W2 are about 1 mm to 100 mm. A preferable pitch (P1, P2) between the openings is about 1 mm to 100 mm as in the metal mask of the first embodiment.

(Manufacturing method of the vapor deposition mask of 1st Embodiment)
Next, the manufacturing method of the vapor deposition mask of 1st Embodiment is demonstrated. The manufacturing method of the vapor deposition mask 100 of 1st Embodiment is the resin board by which the metal mask 10 with which the several slit 15 was provided on the one surface of the resin board 30 was laminated | stacked, as shown to Fig.19 (a). A preparatory process for preparing a metal mask with attachment, and as shown in FIG. 19B, one surface of the resin plate 30 is irradiated with a laser through the slit 15 from the metal mask side, and a plurality of the masks as shown in FIG. A resin mask forming step for forming openings 25 necessary for configuring the screen in the resin plate 30, a region corresponding to a position overlapping with the slit 15 on one surface of the resin mask 20, and the other surface of the resin mask 20 A region corresponding to a position that overlaps the slit 15 on one surface of the resin mask (see FIG. 19D), and the resin mask 20 A metal layer forming step of forming a metal layer 40 having a thickness smaller than that of the metal mask on one or both of the surfaces (see FIG. 2B), and constituting a metal mask with a resin plate As the metal mask 10 to be used, a metal mask provided with a slit 15 that overlaps at least one of the plurality of screens is used. Hereinafter, the manufacturing method of the vapor deposition mask of 1st Embodiment is demonstrated concretely.

(Preparation process)
In preparing a metal mask with a resin plate in which a metal mask 10 provided with a plurality of slits is laminated on the resin plate 30 shown in FIG. 19A, a manufacturing method for obtaining the metal mask with a resin plate is described. An example will be described.

(First production example of metal mask with resin plate)
In the first method of manufacturing a metal mask with a resin plate, first, a metal mask provided with a plurality of slits 15 and a resin plate 30 are prepared. In the present invention, the metal mask 10 prepared here is a metal provided with the slit 15 that overlaps with the entire opening 25 provided on at least one entire screen described in the vapor deposition mask 100 of the first embodiment. A mask 10 is used. Subsequently, the resin plate 30 prepared above and the metal mask 10 are bonded together to obtain a metal mask with a resin plate.

  In the above method, the resin plate 30 constituting the metal mask with a resin plate includes not only a plate-like resin but also a resin layer or a resin film formed by coating as described above. That is, the resin plate may be prepared in advance or may be formed by a conventionally known coating method or the like. The resin plate is a concept including a resin film and a resin sheet. Moreover, there is no limitation also about the hardness of a resin board, A hard board may be sufficient and a soft board may be sufficient. Moreover, there is no limitation in particular about the bonding method of the resin board 30 and the metal mask 10, The metal mask 10 and the resin board 30 may be bonded together using various adhesives, and the resin board which has self-adhesiveness is used. May be. The sizes of the metal mask 10 and the resin plate 30 may be the same or different. In consideration of the optional fixing to the frame thereafter, the size of the resin plate 30 is made smaller than that of the metal mask 10 so that the outer peripheral portion of the metal mask 10 is exposed. It is preferable because it can be easily welded to the frame.

"Method of forming a metal mask with slits"
As a method of forming the metal mask 10 provided with the slit 15, a masking member, for example, a resist material is applied to the surface of the metal plate, a predetermined portion is exposed and developed, and finally the slit 15 is formed. A resist pattern is formed leaving the position to be formed. As the resist material used as the masking member, those having good processability and desired resolution are preferable. Next, etching is performed by an etching method using this resist pattern as an etching resistant mask. After the etching is completed, the resist pattern is removed by washing. Thereby, the metal mask 10 provided with the plurality of slits 15 is obtained. Etching for forming the slit 15 may be performed from one side of the metal plate or from both sides. In addition, when the slit 15 is formed in the metal plate using a laminate in which the resin plate is provided on the metal plate, a masking member is applied to the surface of the metal plate that is not in contact with the resin plate. A slit 15 is formed by etching from the side. In addition, when the resin plate has etching resistance to the etching material of the metal plate, it is not necessary to mask the surface of the resin plate, but when the resin plate does not have resistance to the etching material of the metal plate. Needs to be coated with a masking member on the surface of the resin plate. In the above description, the resist material is mainly described as the masking member. However, instead of coating the resist material, a dry film resist may be laminated and the same patterning may be performed.

(Second production example of metal mask with resin plate)
A second method for obtaining a metal mask with a resin plate is to prepare a laminate in which a resin layer is previously formed by coating a metal plate to be a metal mask, and a masking member such as a resist material is formed on the surface of the metal plate. Is applied, and a predetermined portion is exposed and developed to form a resist pattern that leaves a position where the slit 15 is finally formed. Next, using this resist pattern as an etching resistant mask, etching is performed by an etching method. After the etching is completed, the resist pattern is washed and removed to obtain a metal mask with a resin plate on which a metal mask is provided on the resin plate.

(Process to fix the metal mask with resin plate to the frame)
This step is an optional step in the method of manufacturing the vapor deposition mask of the first embodiment, but the completed vapor deposition mask is not fixed to the frame, but to the metal mask with a resin plate fixed to the frame, Since the opening is provided later, the positional accuracy can be improved significantly. In addition, when fixing the completed vapor deposition mask 100 to a frame, in order to fix a metal mask with an opening determined with respect to the frame, the opening position coordinate accuracy is higher than in the case of having this process. Will be reduced.

  The method for fixing the metal mask with a resin plate to the frame is not particularly limited, and for example, it can be fixed using spot welding with a laser beam, an adhesive, screwing, or the like.

  The frame used here is a substantially rectangular frame member, and has an opening for exposing the opening 25 provided in the resin mask of the vapor deposition mask 100 to be finally fixed to the vapor deposition source side. The material of the frame is not particularly limited, and any member that can support the vapor deposition mask may be used. For example, a metal frame, a ceramic frame, or the like can be used. Among these, the metal frame is preferable in that it can be easily welded to the metal mask of the vapor deposition mask and the influence of deformation or the like is small. As the material of the metal frame, a metal material having high rigidity, for example, SUS or Invar material is suitable.

  Although there is no limitation in particular also about the thickness of a flame | frame, it is preferable that it is about 10-30 mm from points, such as rigidity. The width between the inner peripheral end face of the opening of the frame and the outer peripheral end face of the frame is not particularly limited as long as the frame and the metal mask of the vapor deposition mask can be fixed. For example, the width is about 10 mm to 70 mm. The width can be exemplified.

  There is no particular limitation on the width between the inner peripheral surfaces of the opening of the frame and the width between the outer peripheral end surfaces of the frame. The width is smaller than the lateral width of the mask. Similarly, the width between the vertical directions of the inner peripheral surfaces of the openings in the frame is smaller than the vertical width of the vapor deposition mask or the metal mask with resin plate. There is no particular limitation on the width between the lateral end faces of the frame.

  Further, a reinforcing frame or the like may exist in the opening of the frame as long as the exposure of the opening 25 of the resin mask 20 is not hindered. In other words, the opening may have a configuration divided by a reinforcing frame or the like. In the form shown in FIG. 23, a plurality of reinforcing frames 65 extending in the horizontal direction are arranged in the vertical direction. Instead of this reinforcing frame 65, or in parallel therewith, a plurality of reinforcing frames extending in the vertical direction are arranged in the horizontal direction. May be. In the form shown in FIG. 24, a plurality of reinforcing frames 65 extending in the vertical direction are arranged in the horizontal direction. However, instead of or together with the reinforcing frame 65, the reinforcing frames extending in the horizontal direction are arranged in the vertical direction. A plurality of them may be arranged. By using the frame 60 on which the reinforcing frame 65 is disposed, when the deposition mask 100 of the various embodiments described above is fixed to the frame 60 in a plurality of vertical and horizontal directions, The vapor deposition mask can be fixed to the metal frame 60 even at the position where the vapor deposition masks overlap. FIG. 23 is a front view showing a vapor deposition mask with a frame in which one vapor deposition mask 100 is fixed to a frame 60 having a reinforcement frame 65, and FIG. 24 shows a plurality of frames 60 having a reinforcement frame 65. It is the front view which shows the vapor deposition mask with a frame by which the vapor deposition mask 100 of this is fixed, and it is the figure seen from the resin mask side.

(Process of forming an opening corresponding to the pattern to be deposited on the resin plate of the metal mask with resin plate by irradiating the laser from the metal mask side)
Next, as shown in FIG. 19B, a laser is irradiated through the slit 15 from the metal mask 10 side of the metal mask with a resin plate to form an opening 25 corresponding to the pattern to be deposited on the resin plate 30, The resin mask 20 is used. The laser device used here is not particularly limited, and a conventionally known laser device may be used. Thereby, as shown in FIG. 19C, a laminated body is obtained in which the resin mask provided with the opening 25 and the metal mask provided with the slit 15 are laminated.

  In the vapor deposition mask manufacturing method according to the first embodiment of the present invention, the metal mask 10 in which the slit 15 is provided in advance at the position overlapping the entire screen or two or more entire screens in advance is used. In each of the slits 15, an opening 25 required to configure one screen or an opening 25 required to configure two or more screens is formed. That is, one slit 15 is provided so as to overlap with an opening constituting the entire screen or an opening 25 constituting two or more entire screens.

  Further, when the opening 25 is provided in the resin plate of the metal mask with the resin plate fixed to the frame, a reference plate (not shown) in which a pattern for vapor deposition, that is, a pattern corresponding to the opening 25 to be formed is previously provided. In a state where the reference plate is bonded to the surface of the resin plate where the metal mask 10 is not provided, laser irradiation corresponding to the pattern of the reference plate may be performed from the metal mask 10 side. . According to this method, the opening 25 can be formed in a so-called facing-off state in which laser irradiation is performed while looking at the pattern of the reference plate bonded to the metal plate with the resin plate, and the dimensional accuracy of the opening is extremely high. The high-definition opening 25 can be formed. Moreover, since this method forms the opening part 25 in the state fixed to the flame | frame, it can be set as the vapor deposition mask excellent in not only a dimensional accuracy but a positional accuracy.

  In the case of using the above method, it is necessary that the pattern of the reference plate can be recognized by a laser irradiation device or the like through the resin plate 30 from the metal mask 10 side. As the resin plate, when it has a certain thickness, it is necessary to use a transparent one. However, as described above, a preferable thickness considering the influence of shadow, for example, about 3 μm to 25 μm. In the case of the thickness, the reference plate pattern can be recognized even with a colored resin plate.

  The method for bonding the metal mask with resin plate and the reference plate is not particularly limited. For example, when the metal mask 10 is a magnetic body, a magnet or the like is disposed behind the reference plate, and the metal with resin plate is provided. They can be bonded together by attracting the resin plate 30 of the mask and the reference plate. In addition, it can also be bonded using an electrostatic adsorption method or the like. Examples of the reference plate include a TFT substrate having a predetermined opening pattern and a photomask.

(Metal layer forming process)
Next, the laminate obtained by laminating the metal mask 10 provided with the slit 15 on one surface of the resin mask provided with the opening 25 obtained as described above is passed through the slit 15 from the metal mask 10 side. A metal material is attached on one surface of the resin mask 20, and a metal layer 40 having a thickness smaller than that of the metal mask is formed on one surface of the resin mask 20 corresponding to the position overlapping the slit 15. Thereby, the vapor deposition mask of 1st Embodiment is obtained. In the configuration shown in FIG. 19D, the metal layer 40 is also provided on the top surface of the metal mask 10 and the slit inner wall surface (not shown) of the metal mask 10. The metal layer 40 can be provided only on the surface of the resin mask 20 that overlaps the slit 15 by masking the region other than the surface of the resin mask 20 that overlaps the slit 15. Further, by masking a part of the surface of the resin mask corresponding to the position overlapping with the slit 15, a part on the “metal layer forming surface” may not be covered with the metal layer 40. (See FIG. 5 of the first embodiment)

  Moreover, as described above, the vapor deposition mask 100 of a preferred embodiment is characterized in that the metal layer 40 is not in contact with the inner wall surface of the slit 15 (see FIG. 22). Therefore, in the case where the vapor deposition mask of the preferred form is used, a masking process is performed on a region other than the “metal layer forming surface” on the one surface of the resin mask 20 and the vicinity of the inner wall surface of the slit 15. The metal layer 40 that does not contact the inner wall surface of the slit 15 can be obtained by adhering a metal material on one surface of 20. In addition to this, after forming the metal layer 40 so as to be in contact with the inner wall surface of the slit 15 once, laser processing or etching is performed on the portion where the metal layer 40 and the inner wall surface of the slit 15 are in contact with each other. An arbitrary process such as processing may be performed to remove a part of the metal layer 40, so that the metal layer 40 and the inner wall surface of the slit 15 are not in contact with each other.

  In another form of the metal layer forming step, a metal material is attached on the other surface of the resin mask 20, and the metal layer 40 having a thickness smaller than that of the metal mask is formed on the other surface of the resin mask 20. .

  A method for forming the metal layer 40 by attaching a metal material is not particularly limited, and examples thereof include various PVD methods such as a vacuum deposition method, a sputtering method, and an ion plating method, a CVD method, and a plating method. About the adhesion amount of a metal material, it can set suitably in the range which satisfy | fills the conditions that the thickness of the metal layer 40 is thinner than the thickness of the metal mask 10. FIG. Preferably, the thickness of the metal layer 40 is preferably 0.01 μm to 10 μm, more preferably 0.05 μm to 5 μm, and particularly preferably 0.1 μm to 1 μm.

  Moreover, the metal layer 40 can also be formed by methods other than those described above. For example, the metal layer 40 can also be formed by applying a coating liquid containing a metal material in a pattern on one surface or the other surface of the resin mask 20. In addition, a coating liquid is applied to one surface of the resin mask 20 or the other entire surface to form a coating layer, and the coating layer is etched, laser processed, or the like to form a metal layer. The metal layer 40 can also be formed by removing a part of the coating layer so as to leave a portion to be 40.

  In addition, a slimming process may be performed between the processes described above or after the processes. For example, when a resin plate 30 that finally becomes the resin mask 20 or a metal mask 10 that is thicker than the preferred thickness described above is used, the metal mask 10 or the resin plate 30 is removed during the manufacturing process. When transporting alone, excellent durability and transportability can be imparted. On the other hand, in order to prevent the occurrence of shadows and the like, the thickness of the vapor deposition mask 100 obtained by the production method of the present invention is preferably an optimum thickness. The slimming process is a useful process for optimizing the thickness of the vapor deposition mask 100 while satisfying durability and transportability during or after the manufacturing process.

  The slimming of the metal mask 10 is the surface of the metal mask 10 that does not contact the resin plate 30 or the surface of the metal mask 10 that does not contact the resin plate 30 or the resin mask 20 during or after the above-described steps. Can be realized by etching using an etching material capable of etching the metal mask 10.

  The same applies to the resin plate 30 to be the resin mask 20 and the slimming of the resin mask 20, that is, the optimization of the thickness of the resin plate 30 and the resin mask 20, and during or after any of the above-described steps, The surface of the resin plate 30 that is not in contact with the metal mask 10 or the surface of the resin mask 20 that is not in contact with the metal mask 10 is etched using an etching material that can etch the material of the resin plate 30 and the resin mask 20. This is possible. Moreover, after forming the vapor deposition mask 100, the thickness of both the metal mask 10 and the resin mask 20 can be optimized by etching.

(Modified example of the manufacturing method of the vapor deposition mask of 1st Embodiment)
Next, a modified example (hereinafter, referred to as a modified manufacturing method) of the vapor deposition mask manufacturing method of the first embodiment will be described. The manufacturing method of the modified example includes a step of forming a metal plate on the surface of the resin plate by forming a metal layer on the resin plate, and a metal of the resin plate with the metal layer. The process of bonding the metal plate with the metal layer and the metal mask provided with the slit so that the layer and the metal mask face each other, and laser irradiation from the metal mask side through the slit, the resin of the resin plate with the metal layer Forming an opening corresponding to the pattern to be deposited on the plate. According to this method, as shown in FIG. 4, the metal layer 40 is provided between the metal mask 10 and the resin mask 20, and the metal is formed on the surface of the resin mask 20 corresponding to the position overlapping the slit 15. A vapor deposition mask provided with the layer 40 can be obtained. As a method of forming a resin plate with a metal layer, the metal layer is formed on the resin plate by using various PVD methods such as the vacuum evaporation method, the sputtering method, and the ion plating method described above, the CVD method, the plating method, and the like. In addition to the forming method, the coating liquid containing the material of the metal layer is coated and dried on the resin plate by using various coating methods, and the method of laminating the metal foil on the resin plate is exemplified. be able to.

  In the manufacturing method of the above modification, a laser beam is applied to penetrate the metal layer 40 and the resin plate, and finally a through hole that becomes the opening 25 is formed in the resin plate. Instead of this method, etching is performed. By the processing method, the metal layer 40 and the resin plate can be penetrated, and a through hole that finally becomes the opening 25 can be formed in the resin plate.

  Further, in the manufacturing method of the above modification, the metal mask 10 provided with the slit is bonded to the resin plate with the metal layer. However, the metal plate is bonded to the resin plate with the metal layer, and the first embodiment is performed. The metal mask 10 can also be formed from a metal plate using the “method for forming a metal mask provided with slits” described in the vapor deposition mask of the embodiment.

(Manufacturing method of the vapor deposition mask of 2nd Embodiment)
Next, the manufacturing method of the vapor deposition mask of 2nd Embodiment is demonstrated. As shown in FIG. 20A, the method for manufacturing the vapor deposition mask 100 of the second embodiment is a resin plate in which a metal mask provided with one through hole 16 is laminated on one surface of the resin plate 30. 20A, a laser beam is irradiated on one surface of the resin plate 30 through one through hole 16 from the metal mask 10 side as shown in FIG. One of the step of forming a plurality of openings 25 at a position overlapping with the through hole 16, a region corresponding to a position overlapping with one through hole 16 on one surface of the resin mask 20, and the other surface of the resin mask 20 A region corresponding to a position overlapping one through-hole 16 on one surface of the resin mask (see FIG. 20C) by attaching a metal material on one or both surfaces, and the other side of the resin mask Surface (see Fig. 2 (b)) Either one, or on both surfaces, characterized in that it comprises a metal layer formation step of forming a thin metal layer 40 thickness than the metal mask.

  The manufacturing method of the second embodiment is the same as the manufacturing method of the first embodiment except that the metal mask used in the manufacturing method of the first embodiment is different. Is omitted.

  As the metal mask 10 provided with one through-hole 16, the metal mask described in the vapor deposition mask of the second embodiment can be used as it is. For the method of manufacturing the metal mask, the method described in the manufacturing method of the first embodiment can be used as it is.

<Deposition mask of other embodiment>
Next, the vapor deposition mask of other embodiment is demonstrated. In the vapor deposition mask of another embodiment, the metal mask 10 provided with the slit 15 overlapping the opening 20 is laminated on one surface of the resin mask 20 provided with the opening 25 corresponding to the pattern to be produced by vapor deposition. A metal mask on one or both of the region corresponding to the position overlapping the slit 15 on one surface of the resin mask 20 and the other surface of the resin mask 20. A metal layer 40 having a thickness less than 10 is provided.

  The vapor deposition mask of another embodiment is (i) a metal mask 10 in which a slit 15 overlapping with the opening 20 is provided on one surface of the resin mask 20 provided with an opening 25 corresponding to a pattern to be produced by vapor deposition. (Ii) a region corresponding to a position overlapping with the slit 15 on one surface of the resin mask 20 and the other surface of the resin mask 20, or on both surfaces In addition, any material that satisfies the condition that the metal layer 40 thinner than the metal mask 10 is provided may be used. Therefore, the vapor deposition mask of another embodiment is an essential requirement for the vapor deposition mask of the first embodiment, and the resin mask is provided with openings necessary for configuring a plurality of screens. The slits correspond to the requirement that each slit is provided at a position that overlaps at least one entire screen, and the requirement for the vapor deposition mask of the second embodiment, which corresponds to the pattern for vapor deposition. A metal mask provided with one through hole is laminated on one surface of a resin mask provided with a plurality of openings, and all of the plurality of openings are provided at positions overlapping one through hole. It is not limited to the requirements.

  According to the vapor deposition mask of other embodiment, the area | region corresponding to the position which overlaps with the slit 15 in one surface of the resin mask 20 similarly to the vapor deposition mask of the said 1st Embodiment or 2nd Embodiment, and a resin mask By providing the metal layer 40 having a thickness smaller than that of the metal mask 10 on either one or both surfaces of the other surface 20, each opening 25 provided in the resin mask 20, and a deposition target Can be sufficiently adhered to each other, and the generation of a gap can be effectively prevented. For example, in the vapor deposition mask of another embodiment, the slit 15 of the metal mask 10 may be provided at a position that does not overlap the entire screen. Further, the slits 15 formed in the metal mask 10 may have a stripe shape (not shown).

(Deposition mask preparation)
Next, the vapor deposition mask preparation of the present invention will be described. The vapor deposition mask preparation 150 of the present invention includes a metal mask 10 provided with a slit, a resin mask provided with an opening corresponding to a pattern to be deposited and formed at a position overlapping the slit 15 on the surface of the metal mask. Is a vapor deposition mask preparation used for manufacturing a vapor deposition mask formed by laminating a metal mask 10 provided with a slit on one surface of a resin plate 30 as shown in FIG. A metal layer having a thickness smaller than that of the metal mask on one or both of the region corresponding to the position overlapping the slit 15 on one surface of the resin plate 30 and the other surface of the resin plate 30 40 is provided. FIG. 21 is a cross-sectional view showing an example in which the metal layer 40 is provided in a region corresponding to a position overlapping with the slit 15 on one surface of the resin plate 30.

(Resin plate in vapor deposition mask preparation)
As the resin plate 30, those described in the vapor deposition mask manufacturing method of the first embodiment and the second embodiment can be used as they are, and detailed description thereof is omitted here.

(Metal mask in deposition mask preparation)
As the metal mask, the metal mask 10 described in the vapor deposition masks of the first embodiment and the second embodiment can be used as they are, and detailed description thereof is omitted here.

(Metal layer in deposition mask preparation)
The material of the metal layer is the same as that described in the vapor deposition masks of the first embodiment and the second embodiment, and detailed description thereof is omitted here.

  As a method for forming the metal layer, the metal mask with a resin plate described in the method for manufacturing the vapor deposition mask of the first embodiment is prepared, and then the slit 15 is formed from the metal mask 10 side through a slit or one through hole. Or it can form by making a metal material adhere on one surface of the resin board 30 which overlaps with one through-hole. Further, as described in the modification of the method for manufacturing the vapor deposition mask of the first embodiment, a resin plate with a metal layer in which the metal layer 40 is provided on the resin plate is prepared, and the resin plate with the metal layer and the metal mask are prepared. Can also be obtained by pasting together. Alternatively, the metal layer 40 can be formed by attaching a metal material on the other surface of the resin plate 30.

  According to the vapor deposition mask preparation of one embodiment of the present invention, the opening 25 is formed in the resin plate constituting the vapor deposition mask preparation using the etching processing method or the laser processing method for the vapor deposition mask preparation. By doing so, it is possible to obtain the vapor deposition mask capable of forming the high-definition vapor deposition pattern described in the first embodiment and the second embodiment. Moreover, it is good also as a vapor deposition mask preparation body for obtaining the vapor deposition mask of other embodiment demonstrated above instead of the vapor deposition mask preparation body of one Embodiment.

(Method for manufacturing organic semiconductor element)
Next, the manufacturing method of the organic-semiconductor element of one Embodiment of this invention is demonstrated. The method for producing an organic semiconductor element of the present invention includes a step of forming a vapor deposition pattern on a vapor deposition object by a vapor deposition method using a vapor deposition mask with a frame, and the following vapor deposition with a frame in the step of forming the organic semiconductor element. It is characterized in that a mask is used. The vapor deposition method using the frame-equipped vapor deposition mask is not limited in any way. For example, physical vapor deposition methods such as reactive sputtering, vacuum vapor deposition, ion plating, and electron beam vapor deposition (Physical Vapor Deposition). ), Chemical vapor deposition methods such as thermal CVD, plasma CVD, and photo-CVD methods.

  An organic semiconductor device manufacturing method according to an embodiment having a step of forming a vapor deposition pattern by a vapor deposition method using a vapor deposition mask with a frame includes an electrode forming step of forming an electrode on a substrate, an organic layer forming step, and a counter electrode forming step. The deposition pattern is formed on the substrate by a deposition method using a deposition mask with a frame in each optional step. For example, when the vapor deposition method using a vapor deposition mask with a frame is applied to the R, G, B light emitting layer forming step of the organic EL device, vapor deposition patterns of the respective color light emitting layers are formed on the substrate. In addition, the manufacturing method of the organic-semiconductor element of one Embodiment of this invention is not limited to these processes, It is applicable to the arbitrary processes of the conventionally well-known organic-semiconductor element using a vapor deposition method.

  In one embodiment of the vapor deposition mask with a frame used in the method for manufacturing the organic semiconductor element, a slit overlapping the opening is provided on one surface of the resin mask provided with the opening corresponding to the pattern to be deposited. The vapor deposition mask formed by laminating the metal mask is a frame-equipped vapor deposition mask fixed to the frame, and the vapor deposition mask fixed to the frame overlaps the slit 15 on one surface of the resin mask 20 Is a vapor deposition mask in which a metal layer 40 having a thickness smaller than that of the metal mask 10 is provided on one or both of the region corresponding to the above and the other surface of the resin mask 20. To do.

  Moreover, the vapor deposition mask with a frame according to another embodiment used in the method for manufacturing an organic semiconductor element has a slit overlapping with the opening on one surface of a resin mask provided with an opening corresponding to a pattern to be deposited. The vapor deposition mask formed by laminating the metal mask provided with is a vapor deposition mask with a frame fixed to the frame, and a plurality of vapor deposition masks fixed to the frame are formed on one surface of the resin mask. A metal mask provided with slits is laminated, and the resin mask is provided with openings necessary to form a plurality of screens, and the openings correspond to the patterns to be formed by vapor deposition. Is provided at a position that overlaps at least one entire screen, a region corresponding to a position that overlaps the slit on one surface of the resin mask, and the other of the resin mask Of, either one or on both surfaces, wherein the thickness than the metal mask is a thin deposition mask metal layer is provided.

  Moreover, the vapor deposition mask with a frame according to another embodiment used in the method for manufacturing an organic semiconductor element has a slit overlapping with the opening on one surface of a resin mask provided with an opening corresponding to a pattern to be deposited. The vapor deposition mask formed by laminating the metal mask provided with is a vapor deposition mask with a frame fixed to the frame, and the vapor deposition mask fixed to the frame has an opening corresponding to the pattern to be produced by vapor deposition A metal mask having one through hole is laminated on one surface of a plurality of resin masks, and all of the plurality of openings are provided at positions overlapping one through hole. The thickness corresponding to the position overlapping with one through-hole on one surface of the resin and the other surface of the resin mask, or on both surfaces, is thicker than the metal mask. Wherein the thin metal layer is a vapor deposition mask is provided.

  Regarding the vapor deposition mask constituting the vapor deposition mask with a frame, the vapor deposition mask 100 of the first embodiment, the second embodiment, and other embodiments described above can be used as they are, and detailed description thereof is omitted here. . According to the vapor deposition mask of the present invention described above, an organic semiconductor element having a high-definition pattern can be formed. As an organic semiconductor element manufactured with the manufacturing method of this invention, the organic layer, light emitting layer, cathode electrode, etc. of an organic EL element can be mentioned, for example. In particular, the method for producing an organic semiconductor element of the present invention can be suitably used for producing R, G, and B light emitting layers of organic EL elements that require high-definition pattern accuracy.

DESCRIPTION OF SYMBOLS 100 ... Deposition mask 10 ... Metal mask 15 ... Slit 16 ... Through-hole 20 ... Resin mask 25 ... Opening 28 ... Groove 40 ... Metal layer 150 ... Deposition mask preparation body

Claims (10)

A vapor deposition mask in which a metal mask provided with a slit overlapping the opening is laminated on one surface of a resin mask provided with an opening corresponding to a pattern to be produced by vapor deposition,
Region corresponding to a position overlapping the slit in the one surface of the resin mask, and one side of the other surface of the resin mask, or located on both surfaces, thicker than the metal mask thin rather, and has a metal layer which is not in contact with the metal mask,
Deposition mask. A vapor deposition mask for simultaneously forming vapor deposition patterns for a plurality of screens,
The vapor deposition mask is formed by laminating a metal mask provided with a plurality of slits on one surface of a resin mask,
The resin mask is provided with openings necessary to configure a plurality of screens,
The opening corresponds to the pattern to be deposited,
Each of the slits is provided at a position overlapping at least one entire screen,
Region corresponding to a position overlapping the slit in the one surface of the resin mask, and one side of the other surface of the resin mask, or located on both surfaces, thicker than the metal mask thin rather, and has a metal layer which is not in contact with the metal mask,
Deposition mask. A vapor deposition mask for forming a vapor deposition pattern,
The vapor deposition mask is formed by laminating a metal mask on one surface of a resin mask provided with a plurality of openings corresponding to a pattern for vapor deposition.
The metal mask has one through hole that overlaps all of the plurality of openings corresponding to the pattern to be created by vapor deposition,
The region corresponding to the position overlapping with the one through-hole on the one surface of the resin mask and the other surface of the resin mask, or on both surfaces, from the metal mask Has a metal layer that is thin and not in contact with the metal mask,
Deposition mask.   A method of manufacturing a vapor deposition mask,
  A preparation step of preparing a metal mask with a resin plate in which a metal mask provided with a slit is laminated on one surface of the resin plate;
  A resin mask forming step of forming an opening in the resin plate corresponding to a pattern to be deposited by irradiating a laser on one surface of the resin plate through the slit from the metal mask side;
  The region corresponding to the position overlapping with the slit on the one surface of the resin mask, and the other surface of the resin mask, or both surfaces are thinner than the metal mask, And a metal layer forming step of forming a metal layer not in contact with the metal mask;
  Comprising
  A method for manufacturing a vapor deposition mask.   A method of manufacturing a vapor deposition mask,
  A preparation step of preparing a metal mask with a resin plate in which a metal mask provided with a plurality of slits is laminated on one surface of the resin plate;
  A resin mask forming step for forming a plurality of openings in the resin plate by irradiating a laser on one surface of the resin plate through the slit from the metal mask side; and
  The region corresponding to the position overlapping with the slit on the one surface of the resin mask, and the other surface of the resin mask, or both surfaces are thinner than the metal mask, And a metal layer forming step of forming a metal layer not in contact with the metal mask;
  With
  As the metal mask, a metal mask in which a slit is provided at a position overlapping with at least one of the plurality of screens is used.
  A method for manufacturing a vapor deposition mask.   A method of manufacturing a vapor deposition mask,
  A preparation step of preparing a metal mask with a resin plate in which a metal mask provided with one through hole is laminated on one surface of the resin plate;
  A resin mask forming step of irradiating one surface of the resin plate through the one through hole from the metal mask side, and forming a plurality of openings in the resin plate at a position overlapping the one through hole;
  On one surface of the resin mask, the region corresponding to the position overlapping with the one through hole, and the other surface of the resin mask, or on both surfaces, the thickness is greater than that of the metal mask. Forming a metal layer that is thin and does not contact the metal mask; and
  Comprising
  A method for manufacturing a vapor deposition mask.   After fixing the metal mask with a resin plate on a frame, the resin mask forming step is performed.
  The manufacturing method of the vapor deposition mask of any one of Claims 4 thru | or 6.   Produces a vapor deposition mask in which a metal mask provided with a slit and a resin mask provided on the surface of the metal mask and provided with an opening corresponding to a pattern to be vapor deposited at a position overlapping the slit are laminated. Used to
  On one surface of the resin plate before the opening is formed, a metal mask provided with a slit is provided,
  The region corresponding to the position overlapping with the slit on the one surface of the resin plate and the other surface of the resin mask are located on one or both surfaces, and the thickness is larger than that of the metal mask. A thin metal layer that does not contact the metal mask;
  Deposition mask preparation.   A vapor deposition mask with a frame in which a vapor deposition mask is fixed to the frame,
  The evaporation mask is the evaporation mask according to any one of claims 1 to 3.
  Vapor deposition mask with frame.   A method for producing an organic semiconductor element, comprising:
  Including a step of forming a vapor deposition pattern on a vapor deposition object using a vapor deposition mask with a frame,
  As a vapor deposition mask with a frame, the vapor deposition mask with a frame according to claim 9 is used.
  A method for producing an organic semiconductor element.

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