JP6885439B2 - Thin-film mask, thin-film mask with frame, thin-film mask preparation, thin-film mask manufacturing method, and organic semiconductor element manufacturing method - Google Patents

Description

The present invention relates to a thin-film deposition mask, a thin-film deposition mask with a frame, a thin-film deposition mask preparation body, a method for manufacturing a thin-film deposition mask, and a method for manufacturing an organic semiconductor device.

Conventionally, in the manufacture of an organic EL element, the formation of an organic layer or a cathode electrode of an organic EL element is composed of, for example, a metal in which a large number of fine slits are arranged in parallel at minute intervals in a region to be vapor-deposited. A vapor deposition mask was used. When this vapor deposition mask is used, the vapor deposition mask is placed on the surface of the substrate to be vapor-deposited and held from the back surface using a magnet. However, since the rigidity of the slit is extremely small, when the vapor deposition mask is held on the surface of the substrate. The slits are easily distorted, which has been an obstacle to increasing the size of products with high definition or large slit lengths.

Various studies have been made on a vapor deposition mask for preventing distortion of the slit. For example, in Patent Document 1, a base plate also serving as a first metal mask having a plurality of openings and the openings are covered. A second metal mask having a large number of fine slits in the region and a vapor deposition mask provided with a mask tension holding means for positioning the second metal mask on the base plate in a state of being pulled in the longitudinal direction of the slits have been proposed. That is, a thin-film deposition mask that combines two types of metal masks has been proposed. According to this thin-film deposition mask, it is said that the slit accuracy can be ensured without causing distortion in the slit.

By the way, recently, with the increase in size of products using organic EL elements or the increase in substrate size, there is an increasing demand for larger vapor deposition masks, which are used in the manufacture of vapor deposition masks made of metal. The metal plate is also getting larger. However, with the current metal processing technology, it is difficult to accurately form a slit in a large metal plate, and even if the method proposed in Patent Document 1 can prevent the slit portion from being distorted. It is not possible to deal with high definition slits. Further, when the vapor deposition mask is made of only metal, its mass increases as the size increases, and the total mass including the frame also increases, which hinders handling.

In the vapor deposition mask proposed above, in order to reduce the weight of the vapor deposition mask, it is necessary to reduce the thickness of the vapor deposition mask made of metal. However, if the thickness of the thin-film deposition mask made of metal is reduced, the strength of the thin-film deposition mask will be reduced accordingly, and the vapor-film deposition mask will be deformed or it will be difficult to handle. Problems will arise.

Japanese Unexamined Patent Publication No. 2003-332057

The present invention has been made in view of such a situation, and can satisfy both high definition and light weight even when the size is increased, and can form a high-definition vapor deposition pattern while maintaining strength. To provide a thin-film deposition mask capable of producing a thin-film deposition mask, to provide a thin-film deposition mask preparation body capable of easily manufacturing the thin-film deposition mask, to provide a method for manufacturing the thin-film deposition mask, and to accurately manufacture an organic semiconductor device. The main subject is to provide a method for manufacturing an organic semiconductor device capable of the present invention.

The vapor deposition mask of the present invention for solving the above problems is necessary for forming a vapor deposition pattern at a position overlapping the metal layer having a slit defined by the space formed by the inner wall surface extending from the front surface to the back surface and the slit. a deposition mask and the resin layer are laminated with an open mouth, the metal layer has a general area, the general area thick region thicker than the slit of the metal layer It is located in a part of the general region and has a rectangular shape when the vapor deposition mask is viewed in a plan view, and the thick-walled region is either in the long side direction or the short side direction of the vapor deposition mask, or It is arranged so as to extend to both sides.
Further, in the vapor deposition mask, the thick-walled region is arranged so as to extend in the long side direction and the short side direction of the vapor deposition mask, and extends in the long side direction and the short side direction of the vapor deposition mask. located the thick regions may be continuous so as to surround the front KiHiraki opening.
Further, the deposition mask of the present invention to solve the above problems, a metal layer having a slit defined by the space shaped by the inner wall surface extending from the surface to the rear surface, the formation of the deposition pattern at a position overlapping the slit a deposition mask and the resin layer are laminated with an open mouth necessary, the metal layer, and the general area has a plurality of thick regions of thicker columnar than the general area, the slits , Is located in a part of the general region of the metal layer.
Further, the deposition mask is thick-walled region of the plurality of the columnar may be arranged with a predetermined interval so as to surround the front KiHiraki opening.
Also, metal deposition mask of the present invention for solving the above problems, to expose the resin layer having an open mouth necessary for the formation of the deposition pattern, is laminated with the resin layer, and a portion of the resin layer A thin-film deposition mask having a layer, wherein the metal layer has a general region and a columnar thick-walled region thicker than the general region, and when the vapor deposition mask is viewed from the metal layer side, the metal layer is arranged so that all look before KiHiraki opening.
Further, the deposition mask of the present invention to solve the above problems, a metal layer having a slit defined by the space shaped by the inner wall surface extending from the surface to the rear surface, the formation of the deposition pattern at a position overlapping the slit a deposition mask and the resin layer are laminated with an open mouth necessary, the metal layer has a general area, a thick region thicker than the general area, the slit, the metal It is located in a part of the general region of the layer, and when the vapor deposition mask is viewed in cross section, the thick region includes a portion where the thickness increases as the distance from the boundary between the thick region and the general region increases.
Further, in the thin-film deposition mask with a frame of the present invention for solving the above-mentioned problems, the above-mentioned thin-film deposition mask is fixed to the frame.
Further, in the thin-film deposition mask with a frame, at least a part of the thick region may overlap with the frame.
Further, in the vapor deposition mask of one embodiment, a metal mask provided with a slit and a resin mask provided with an opening corresponding to a pattern to be vapor-deposited at a position overlapping the slit are laminated. It is characterized by having a general region provided with the slit and a thick region thicker than the general region.

In the above-mentioned vapor deposition mask, the thickness of the general region may be 5 μm or more and 25 μm or less.

Further, the thin-film deposition mask preparation body of the present invention for solving the above-mentioned problems is a thin-film deposition mask preparation body for obtaining the above-mentioned thin-film deposition mask, and has a general region and a thick-walled region thicker than the general region. a, a metal layer located slit in a part of the general area, and the front of the resin layer before KiHiraki opening is formed are laminated.
Further, the vapor deposition mask preparation body of one embodiment is a vapor deposition mask obtained by laminating a metal mask provided with a slit and a resin mask provided with an opening corresponding to a pattern to be vapor-deposited at a position overlapping the slit. A vapor deposition mask preparation body for obtaining a metal mask, wherein a metal mask provided with a slit is laminated on one surface of a resin plate, and the metal mask is formed by a general region provided with the slit and the said metal mask. It is characterized by having a thick region thicker than a general region.

A method of manufacturing a deposition mask of the present invention to solve the above problems, before a metal layer having a slit defined by the space shaped by the inner wall surface extending from the surface to the rear surface, the open mouth is formed a step in which the resin layer is prepared with a resin layer metal layer laminated in, irradiated with a laser from the metal layer side, the open mouth required to form the deposition pattern on the resin layer of the resin layer with a metal layer The formed vapor deposition mask has a rectangular shape when viewed in a plan view, and the manufactured vapor deposition mask has a metal layer thicker than that of the general region and the general region. It has a thick thick region, the slit is located in a part of the general region of the metal layer, and the thick region is either the long side direction or the short side direction of the vapor deposition mask, or It is arranged so as to extend to both sides.
A method of manufacturing a deposition mask of the present invention to solve the above problems, before a metal layer having a slit defined by the space shaped by the inner wall surface extending from the surface to the rear surface, the open mouth is formed a step in which the resin layer is prepared with a resin layer metal layer laminated in, irradiated with a laser from the metal layer side, the open mouth required to form the deposition pattern on the resin layer of the resin layer with a metal layer In the vapor deposition mask manufactured by the step of forming the metal layer, the metal layer has a general region and a plurality of columnar thick-walled regions thicker than the general region, and the slit is formed by the metal layer. It is located in a part of the general area of.
A method of manufacturing a deposition mask of the present invention to solve the above problems, a resin layer before the opening mouth portion is formed, a resin layer and a metal layer are laminated to expose a portion of the resin layer comprising a step of preparing a metal layer attached was irradiated with a laser from the metal layer side, forming an open mouth required to form the deposition pattern on the resin layer of the resin layer with a metal layer, the manufacturing In the vapor deposition mask, the metal layer has a general region and a columnar thick-walled region thicker than the general region, and when the vapor deposition mask is viewed from the metal layer side, the metal layer is: are arranged so that all look before KiHiraki opening.
A method of manufacturing a deposition mask of the present invention to solve the above problems, before a metal layer having a slit defined by the space shaped by the inner wall surface extending from the surface to the rear surface, the open mouth is formed a step in which the resin layer is prepared with a resin layer metal layer laminated in, irradiated with a laser from the metal layer side, the open mouth required to form the deposition pattern on the resin layer of the resin layer with a metal layer In the vapor deposition mask manufactured by the step of forming the metal layer, the metal layer has a general region and a plurality of columnar thick-walled regions thicker than the general region, and the slit is formed by the metal layer. It is located in a part of the general region of the above, and includes a portion where the thick-walled region becomes thicker as the distance from the boundary between the thick-walled region and the general region increases when the vapor deposition mask is viewed in cross section.
Further, the method for manufacturing the vapor deposition mask of one embodiment includes a step of bonding a metal mask provided with a slit and a resin plate, and a pattern of irradiating a laser from the metal mask side to vaporize the vapor deposition mask on the resin plate. A metal mask comprising a step of forming a corresponding opening and having a general region provided with the slit and a thick region thicker than the general region is used as the metal mask. It is characterized by being able to be.

Further, the metal mask used in the above manufacturing method masks the portion of the metal plate to be the thick-walled region, and the unmasked region of the metal plate is slimmed to form the general region. The metal mask may be obtained by the step of forming the slit in the general region.

Further, in the above manufacturing method, after fixing the metal mask to which the resin plate is attached on the frame, the laser is irradiated from the metal mask side to provide an opening corresponding to the pattern to be vapor-deposited on the resin plate. The step of forming may be performed.

Further, the present invention for solving the above-mentioned problems is a method for manufacturing an organic semiconductor element, which includes a step of forming a thin-film deposition pattern on a thin-film deposition object using a thin-film deposition mask, and the above-mentioned thin-film deposition as the thin-film deposition mask. Any of a mask, a thin-film deposition mask with a frame, and a thin-film deposition mask manufactured by the above-mentioned thin-film deposition mask manufacturing method is used.

According to the thin-film deposition mask of one embodiment of the present invention, it is possible to satisfy both high definition and light weight even when the size is increased, and it is possible to form a high-definition vapor deposition pattern while maintaining strength. Become. Further, according to the vapor deposition mask preparation body of one embodiment of the present invention and the method for manufacturing a vapor deposition mask, the vapor deposition mask having the above characteristics can be easily manufactured. Further, according to the method for manufacturing an organic semiconductor device according to an embodiment of the present invention, the organic semiconductor device can be manufactured with high accuracy.

(A) is a front view of the vapor deposition mask of one embodiment as viewed from the metal mask side, and (b) is a schematic cross-sectional view of the vapor deposition mask of one embodiment. (A) to (d) are front views of the vapor deposition mask of one embodiment as viewed from the metal mask side. It is a front view which looked at the vapor deposition mask of one Embodiment from the metal mask side. It is a front view which looked at the vapor deposition mask of one Embodiment from the metal mask side. It is a front view which looked at the vapor deposition mask of one Embodiment from the metal mask side. It is a partially enlarged sectional view of the vapor deposition mask 100 of one embodiment. (A) is a perspective view of another aspect of the resin mask, and (b) is a cross-sectional view thereof. It is the schematic sectional drawing which shows the relationship between the shadow and the thickness of a metal mask. It is a partial schematic cross-sectional view which shows the relationship between the slit of a metal mask and the opening of a resin mask. It is a partial schematic cross-sectional view which shows the relationship between the slit of a metal mask and the opening of a resin mask. It is a front view which looked at the vapor deposition mask of one Embodiment from the metal mask side. It is a front view which looked at the vapor deposition mask of one Embodiment from the metal mask side. It is a front view which looked at the vapor deposition mask of one Embodiment from the metal mask side. It is the schematic sectional drawing of the vapor deposition mask of one Embodiment. It is a front view which looked at the vapor deposition mask of one Embodiment from the metal mask side. It is a process drawing for demonstrating the manufacturing method of the vapor deposition mask of one Embodiment. Note that (a) to (c) are all cross-sectional views. It is a process drawing for demonstrating an example of the method of forming a metal mask. Note that (a) to (h) are all cross-sectional views. It is a front view which looked at the vapor deposition mask with a frame of one Embodiment from the resin mask side. It is a front view which looked at the vapor deposition mask with a frame of one Embodiment from the resin mask side.

Hereinafter, the vapor deposition mask 100 according to the embodiment of the present invention will be specifically described with reference to the drawings.

FIG. 1A is a front view of the vapor deposition mask according to the embodiment of the present invention as viewed from the metal mask side, and FIG. 1B is a schematic cross-sectional view of FIG. 1A. Further, FIGS. 2 to 4 are front views of the vapor deposition mask of one embodiment as viewed from the metal mask side. The regions shown by shades in FIGS. 1 (a) and 1 (b) and FIGS. 2 to 4 are thick-walled regions 10b, and the metal mask 10 is integrated by a general region 10a and a thick-walled region 10b. I'm doing it. Hereinafter, the vapor deposition mask in the illustrated form will be mainly described, but the present invention is not limited to the illustrated form.

As shown in FIG. 1 (b), the vapor deposition mask 100 of one embodiment includes a metal mask 10 provided with a slit 15 and a metal on the surface of the metal mask 10 (in the case shown in FIG. 1 (b), a metal). A resin mask 20 is laminated with a resin mask 20 located on the lower surface of the mask 10) and provided with an opening 25 corresponding to a pattern to be vapor-deposited at a position overlapping the slit 15.

Here, when the mass of the vapor deposition mask 100 of one embodiment and the mass of the vapor deposition mask composed of only conventionally known metals are compared on the assumption that the thickness of the entire vapor deposition mask is the same, the conventionally known vapor deposition is compared. The weight of the vapor-deposited mask 100 of the present invention is reduced by the amount that a part of the metal material of the mask is replaced with the resin material. Further, in order to reduce the weight by using a thin-film deposition mask composed of only metal, it is necessary to reduce the thickness of the thin-film deposition mask. However, when the thickness of the thin-film deposition mask is reduced, the thin-film deposition mask is used. When the size is increased, the vapor deposition mask may be distorted or its durability may be reduced. On the other hand, according to the vapor deposition mask of one embodiment of the present invention, the resin mask 20 is used even when the thickness of the entire vapor deposition mask is increased in order to satisfy the distortion when the size is increased and the durability. Due to the presence of, the weight can be reduced as compared with the vapor deposition mask formed only of metal. Hereinafter, each will be specifically described.

(Resin mask)
The resin mask 20 is made of resin, and as shown in FIG. 1B, an opening 25 corresponding to a pattern to be vapor-deposited is provided at a position overlapping the slit 15. In the specification of the present application, the pattern to be produced by vapor deposition means a pattern to be produced using the vapor deposition mask. For example, when the vapor deposition mask is used to form an organic layer of an organic EL element, the organic material is used. The shape of the layer. Further, in the illustrated form, an example in which a plurality of rows of openings are arranged vertically and horizontally is described, but the openings 25 may be provided at positions overlapping the slits 15, and the slits 15 may be provided. When only one row is arranged in the vertical direction or the horizontal direction, the opening 25 may be provided at a position overlapping the slit 15 in the one row.

As the resin mask 20, a conventionally known resin material can be appropriately selected and used, and the material is not particularly limited, but a high-definition opening 25 can be formed by laser processing or the like, and the opening 25 can be formed by heat or aging. It is preferable to use a lightweight material having a small dimensional change rate and hygroscopicity. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, and ethylene-. Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylate copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin and the like. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a hygroscopicity of 1.0% or less is preferable, and a resin material having both of these conditions is particularly preferable. .. By using a resin mask using this resin material, the dimensional accuracy of the opening 25 can be improved, and the dimensional change rate and the moisture absorption rate with heat and aging can be reduced. In the present invention, the resin mask 20 is made of a resin material capable of forming a high-definition opening 25 as compared with the metal material as described above. Therefore, the vapor deposition mask 100 having a high-definition opening 25 can be obtained.

The thickness of the resin mask 20 is also not particularly limited, but when vapor deposition is performed using the vapor deposition mask 100 according to the embodiment of the present invention, the vapor deposition portion is insufficient for the pattern to be deposited, that is, the target vapor deposition film. The resin mask 20 is preferably as thin as possible in order to prevent the formation of a thin-film vapor-deposited portion, that is, a so-called shadow, which is thinner than the thickness. However, when the thickness of the resin mask 20 is less than 3 μm, defects such as pinholes are likely to occur, and the risk of deformation and the like increases. On the other hand, if it exceeds 25 μm, shadows may occur. Considering this point, the thickness of the resin mask 20 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin mask 20 within this range, the risk of defects such as pinholes and deformation can be reduced, and the generation of shadows can be effectively prevented. In particular, by setting the thickness of the resin mask 20 to 3 μm or more and 10 μm or less, more preferably 4 μm or more and 8 μm or less, the influence of shadows when forming a high-definition pattern exceeding 300 ppi can be more effectively prevented. .. In the vapor deposition mask 100 of the embodiment of the present invention, the metal mask 10 and the resin mask 20 may be directly bonded or may be bonded via an adhesive layer, but the pressure-sensitive adhesive. When the metal mask 10 and the resin mask 20 are joined via the layer, the total thickness of the resin mask 20 and the pressure-sensitive adhesive layer is 3 μm or more and 25 μm or less, preferably 3 μm, in consideration of the above shadow points. It is preferable to set it within the range of 10 μm or more, particularly preferably 4 μm or more and 8 μm or less.

The shape and size of the opening 25 are not particularly limited, and may be any shape and size corresponding to the pattern to be vapor-deposited. Further, as shown in FIG. 1A, the pitch P1 in the horizontal direction and the pitch P2 in the vertical direction of the adjacent openings 25 can be appropriately set according to the pattern to be vapor-deposited.

The position where the openings 25 are provided and the number of openings 25 are not particularly limited, and one may be provided at a position where it overlaps with the slit 15, or a plurality of openings 25 may be provided in the vertical direction or the horizontal direction. For example, as shown in FIG. 5, when the slit extends in the vertical direction, two or more openings 25 overlapping the slit 15 may be provided in the horizontal direction.

The cross-sectional shape of the opening 25 is also not particularly limited, and the facing end faces of the resin masks forming the opening 25 may be substantially parallel to each other. However, as shown in FIGS. 1B and 6, the opening 25 is formed. It is preferable that the cross-sectional shape of No. 25 has a shape that spreads toward the vapor deposition source. In other words, it is preferable to have a tapered surface that spreads toward the metal mask 10 side. By adopting the cross-sectional shape of the opening 25 as such, it is possible to prevent shadows from being generated in the pattern to be vapor-deposited when vapor deposition is performed using the thin-film deposition mask according to the embodiment of the present invention. The taper angle θ can be appropriately set in consideration of the thickness of the resin mask 20 and the like, but is a straight line connecting the lower bottom tip at the opening of the resin mask and the upper bottom tip at the opening of the resin mask. , The angle (θ) formed by the bottom surface of the resin mask, in other words, in the thickness direction cross section of the inner wall surface forming the opening 25 of the resin mask 20, the inner wall surface of the opening 25 is in contact with the metal mask 10 of the resin mask 20. The angle (θ) formed with the surface on the non-side (in the illustrated form, the lower surface of the resin mask) is preferably in the range of 5 ° to 85 °, and preferably in the range of 15 ° to 80 °. More preferably, it is in the range of 25 ° to 65 °. In particular, even within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used. Further, in FIGS. 1B and 6, the end face 25a forming the opening 25 has a linear shape, but is not limited to this, and has an outwardly convex curved shape. That is, the entire shape of the opening 25 may be a bowl shape. The opening 25 having such a cross-sectional shape is, for example, a multi-stage laser that appropriately adjusts the laser irradiation position and the laser irradiation energy at the time of forming the opening 25, or changes the irradiation position stepwise. It can be formed by irradiation. FIG. 6 is a partially enlarged cross-sectional view showing an example of the vapor deposition mask 100 according to the embodiment of the present invention.

Since the resin mask 20 uses a resin material, the opening 25 can be formed regardless of the processing method used for conventional metal processing, for example, an etching processing method or a processing method such as cutting. That is, the method of forming the opening 25 is not particularly limited, and an opening is made by using various processing methods, for example, a laser processing method capable of forming a high-definition opening 25, precision press processing, photolithography processing, or the like. The part 25 can be formed. The method of forming the opening 25 by a laser processing method or the like will be described later.

Examples of the etching processing method include a spray etching method in which an etching material is sprayed from an injection nozzle at a predetermined spray pressure, a dipping etching method in an etching solution filled with the etching material, and a spin etching method in which the etching material is dropped. An etching method or a dry etching method using gas, plasma, or the like can be used.

Further, in the present invention, since the resin mask 20 is used as the configuration of the vapor deposition mask 100, very high heat is applied to the opening 25 of the resin mask 20 when vapor deposition is performed using the vapor deposition mask 100. , Gas may be generated from the end face 25a (see FIG. 6) forming the opening 25 of the resin mask 20, which may reduce the degree of vacuum in the vapor deposition apparatus. Therefore, in consideration of this point, as shown in FIG. 6, it is preferable that the end face 25a forming the opening 25 of the resin mask 20 is provided with the barrier layer 26. By forming the barrier layer 26, it is possible to prevent gas from being generated from the end face 25a forming the opening 25 of the resin mask 20.

As the barrier layer 26, an inorganic oxide, an inorganic nitride, a metal thin film layer or a vapor-deposited layer can be used. As the inorganic oxide, oxides of aluminum, silicon, indium, tin, and magnesium can be used, and as the metal, aluminum and the like can be used. The thickness of the barrier layer 26 is preferably about 0.05 μm to 1 μm.

Further, the barrier layer preferably covers the surface of the resin mask 20 on the vapor deposition source side. By covering the surface of the resin mask 20 on the vapor deposition source side with the barrier layer 26, the barrier property is further improved. The barrier layer is preferably formed by various PVD (physical vapor deposition) methods and CVD (chemical vapor deposition) methods in the case of inorganic oxides and inorganic nitrides. In the case of a metal, it is preferably formed by various PVD methods such as a sputtering method, an ion plating method, and a vacuum deposition method, particularly by a vacuum deposition method. The surface of the resin mask 20 on the vapor deposition source side may be the entire surface of the resin mask 20 on the vapor deposition source side, and is exposed from the metal mask on the surface of the resin mask 20 on the vapor deposition source side. It may be only the part that is.

FIG. 7A is a perspective view of another aspect of the resin mask, and FIG. 7B is a cross-sectional view thereof.

As shown in FIG. 7, it is preferable that a groove 28 extending in the vertical direction or the horizontal direction (vertical direction in the case of FIG. 7) of the resin mask 20 is formed on the resin mask 20. When heat is applied during vapor deposition, the resin mask 20 thermally expands, which may cause a change in the size and position of the opening 25. However, the expansion of the resin mask is absorbed by forming the groove 28. It is possible to prevent the resin mask 20 from expanding in a predetermined direction as a whole and changing the size and position of the opening 25 due to the accumulation of thermal expansion generated at various parts of the resin mask.

In FIG. 7, a groove 28 extending in the vertical direction is formed between the openings 25, but the present invention is not limited to this, and a groove extending in the horizontal direction may be formed between the openings 25. Good. Furthermore, the groove is not limited to the space between the openings 25, and a groove may be formed at a position overlapping the opening 25. Furthermore, it is also possible to form a groove in a mode in which these are combined.

The depth and width of the groove 28 are not particularly limited, but if the depth of the groove 28 is too deep or the width is too wide, the rigidity of the resin mask 20 tends to decrease. It is necessary to set in consideration of. Further, the cross-sectional shape of the groove is not particularly limited, and may be arbitrarily selected in consideration of a processing method such as a U-shape or a V-shape.

Further, when vapor deposition is performed on the vapor deposition target using the vapor deposition mask of the embodiment, a magnet or the like is arranged behind the vapor deposition target and the vapor deposition mask 100 in front of the vapor deposition target is attracted by a magnetic force. When the vapor deposition mask and the vapor deposition object are brought into close contact with each other, it is preferable to provide a magnetic layer (not shown) made of a magnetic material on the surface of the resin mask 20 on the side not in contact with the metal mask 10. By providing the magnetic layer, the magnetic layer and the thin-film deposition object can be attracted by a magnetic force, and the thin-film deposition mask and the thin-film deposition object of one embodiment can be sufficiently adhered to each other without a gap. It is possible to prevent the thickening of the vapor deposition pattern that may occur due to the gap between the two. The thin-film deposition pattern thickening refers to a phenomenon in which a thin-film deposition pattern having a shape larger than the target vapor deposition pattern is formed.

(Metal mask)
The metal mask 10 is made of metal and is vertically located at a position where it overlaps with the openings 25 when viewed from the front of the metal mask 10, in other words, at a position where all the openings 25 arranged in the resin mask 20 can be seen. A plurality of rows of slits 15 extending in the directional direction or the lateral direction are arranged. It should be noted that this does not limit the fact that the slits 15 of the metal mask 10 in the present invention are arranged at positions where all the openings 25 can be seen, and the slits so that a part of the openings 25 cannot be seen. 15 may be arranged. In FIGS. 1B and 2 to 4, slits 15 extending in the vertical direction of the metal mask 10 are continuously arranged in the horizontal direction. Further, in the present invention, an example in which the slits 15 extend in the vertical direction or the horizontal direction are arranged in a plurality of rows is described, but the slits 15 have only one row in the vertical direction or the horizontal direction. It may be arranged. Further, when the slits 15 are arranged in a plurality of rows in the horizontal direction, a part of the slits 15 arranged in the plurality of rows may be arranged at a position not overlapping with the opening 25 as shown in FIG. .. In FIG. 15, the lateral width of the slit that does not overlap with the opening 25 is narrower than the lateral width of the slit that overlaps with the opening 25, but the lateral direction of the slit 15 that does not overlap with the opening 25. The width of the slit may be the same as the width of the slit overlapping the opening 25 in the lateral direction, or may be wide. Further, the slits 15 that do not overlap with the openings may be arranged in a plurality of rows as shown in FIG. 15, or may be arranged in only one row in the horizontal direction. Further, although not shown, the slit 15 that does not overlap with the opening 15 may be provided so as to straddle the boundary between the general region 10a and the thick region 10b. Alternatively, it may be provided in the thick region 10b.

In explaining the metal mask 10 in the present invention, the relationship between the generation of shadows and the thickness of the metal mask 10 will be specifically described with reference to FIGS. 8 (a) to 8 (c). As shown in FIG. 8A, when the thickness of the metal mask 10 is thin, the vapor deposition material discharged from the vapor deposition source toward the vapor deposition target is the inner wall surface of the slit 15 of the metal mask 10 or the metal mask. The metal mask 10 passes through the slit 15 of the metal mask 10 and the opening 25 of the resin mask 20 without colliding with the surface on the side where the resin mask 20 is not provided, and reaches the vapor deposition target. This makes it possible to form a vapor deposition pattern with a uniform film thickness on the vapor deposition object. That is, it is possible to prevent the occurrence of shadows. On the other hand, as shown in FIG. 8B, when the thickness of the metal mask 10 is thick, for example, when the thickness of the metal mask 10 exceeds 25 μm, the durability of the metal mask 10 is determined by the thickness. It has the advantage that it can be improved, the handling performance can be improved, and the risk of breakage and deformation can be reduced. However, a part of the vapor deposition material discharged from the vapor deposition source is inside the slit 15 of the metal mask 10. It collides with the wall surface or the surface of the metal mask 10 on the side where the resin mask 20 is not formed, and cannot reach the vapor deposition target. As the number of vapor-deposited materials that cannot reach the object to be vapor-deposited increases, shadows are generated in which the object to be vapor-deposited has an undeposited portion having a film thickness thinner than the target film thickness. That is, in a metal mask, it can be said that there is a trade-off relationship between improving durability and preventing the generation of shadows.

Therefore, from the viewpoint of preventing the generation of shadows, the thickness of the metal mask 10 is preferably as thin as possible, specifically 25 μm or less, and particularly preferably 15 μm or less. However, as the thickness of the entire metal mask 10 becomes less than 25 μm, the durability of the metal mask, for example, the rigidity decreases, the metal mask 10 is liable to be broken or deformed, and handling becomes difficult. Occurs. In particular, when the size of the vapor deposition mask is increased, these problems occur more prominently.

Therefore, in the present invention, as shown in FIGS. 1A and 2 to 4, the metal mask 10 has a general region 10a in which the slit 15 is formed and a thick wall thicker than the general region 10a. It has a region 10b. The thick region 10b improves the durability of the metal mask 10. Further, since the slit 15 is formed in the general region 10a which is thinner than the thick region 10b, the slit 15 can be formed so as to prevent the generation of shadows while maintaining the durability of the metal mask.

In the form of the metal mask shown in FIG. 1A, a slit 15 is formed in the general region 10a, and a thick region 10b extending in the vertical direction is provided along the outer edge of the metal mask 10. The location of the thick region 10b is not limited to the illustrated form, and may be appropriately disposed at a location where the influence of shadow is unlikely to occur. The location where the shadow is less likely to occur is determined by the positional relationship between the vapor deposition source and the vapor deposition mask, and there is no limitation on the location of the thick-walled region 10b. For example, in a place where the thin-film deposition material discharged from the thin-film deposition source passes through the slit 15 of the metal mask 10 at an angle of 90 ° ± 20 °, even if the thick-walled region 10b is arranged in the vicinity thereof. Almost unaffected by shadows. Therefore, in such a case, as shown in FIGS. 2 (c) and 2 (d) and FIG. 3, the thick region 10b can be arranged at a position other than the vicinity of the end portion of the metal mask 10. Further, since the vicinity of the end portion of the metal mask 10 is a region where slits are not formed regardless of the positional relationship between the vapor deposition source and the vapor deposition mask 100, it is preferable as a location where the thick-walled region 10b is arranged.

Further, in the form of the metal mask shown in FIG. 1A, a thick region 10b extending in the vertical direction is arranged along the outer edge of the metal mask 10, but in this form, the thickness is as shown in FIG. The general region 10a may be present laterally outside the meat region 10b. That is, the fact that the thick-walled region 10b is arranged near the end of the metal mask means that the thick-walled region 10b is not only arranged along the outer edge of the metal mask 10 but also generally along the outer edge of the metal mask. It is a concept including the fact that the thick-walled region 10b is arranged in the vicinity of the outer periphery of the metal mask 10 so that the region 10a is arranged. This also applies to the metal mask 10 illustrated below.

2 (a) to 2 (d) are front views seen from the metal mask side showing an example of the arrangement position of the thick region 10b, and in FIG. 2 (a), laterally along the outer edge of the metal mask 10. A thick region 10b extending in the direction is arranged.

In FIG. 2B, a thick region 10b extending in the vertical direction and the horizontal direction is arranged along the outer edge of the metal mask 10. That is, the thick region 10b is arranged along the entire outer edge of the metal mask 10. According to this form, the durability of the vapor deposition mask 100 can be further improved as compared with the metal mask 10 having the thick region 10b shown in FIGS. 1 and 2. That is, the larger the region where the thick region 10b is arranged, the more the durability of the vapor deposition mask 100 can be improved. It should be noted that this does not limit the size of the arrangement region of the thick region 10b, and the vapor deposition mask including the metal mask in which the thick region 10b is not arranged as much as the thick region 10b is arranged. Durability can be improved.

In FIG. 2C, a thick region 10b extending in the vertical direction is arranged at the center position in the horizontal direction of the metal mask 10, and in FIG. 2D, the thick region 10b extending in the vertical direction is arranged at the center position in the vertical direction of the metal mask 10 in the horizontal direction. A thick region 10b extending to is arranged. In addition, in FIGS. 2C and 2D, the thickness is shown in FIG. 2B, that is, the entire circumference of the outer edge of the metal mask 10 and the thickness at the horizontal center position or the vertical center position of the metal mask 10. Although the meat region 10b is arranged, it can be combined with the forms shown in FIGS. 1 (a) and 2 (b).

In addition, in FIG. 2C and FIG. 2D, one row of thick-walled regions 10b extending in the horizontal direction or the vertical direction is arranged at the vertical center position or the horizontal center position. There may be a plurality of rows of thick regions extending in the directional direction or the lateral direction. Further, the thick region 10b extending in the horizontal direction or the vertical direction may be arranged at a position other than the vertical center position or the horizontal center position.

Further, as shown in FIG. 3, the thick region 10b can be arranged in a grid pattern. This form is suitable when the vapor deposition mask 100 becomes large. In FIG. 3, slits 15 are provided not only in the general region 10a but also in the thick region 10b. Specifically, in FIG. 3, a plurality of rows of slits 15 extending in the vertical direction are provided so as to straddle the thick region 10b extending in the horizontal direction at a substantially central position in the vertical direction of the metal mask 10. That is, in this case, it can be said that the slit 15 is provided in the general region 10a and the thick region 10b.

As shown in FIGS. 1 (a), 2 and 3, the thick region 10b may extend in the vertical direction or the horizontal direction, in other words, may be continuous in a strip shape, and is shown in FIG. As described above, the columnar thick-walled regions 10b may be arranged at predetermined intervals. Although FIG. 4 is a modified example of the thick-walled region 10b shown in FIG. 1A, it can also be diverted to various arrangement examples of the thick-walled region 10b.

The cross-sectional shape of the thick-walled region 10b at the boundary with the general region 10a is also not particularly limited, and as shown in FIG. 1B, the cross-sectional shape is such that the thick-walled region 10b steeply enters the general region 10a. Also, as shown in FIGS. 14A and 14B, the cross-sectional shape of the thick-walled region is tapered or stepped, and the difference in thickness at the boundary between the general region 10a and the thick-walled region 10b is apparent. May be calm.

The thickness of each of the general region 10a and the thick region 10b is not particularly limited, but the thickness of the general region 10a in which the slit 15 is formed is not affected by shadows and forms a high-definition vapor deposition pattern. The thickness of the film is preferably 25 μm or less, more preferably 15 μm or less. The lower limit value is not particularly limited, but is preferably 5 μm or more, and more preferably 10 μm or more from the viewpoint of metal processing accuracy. In a metal mask that does not have a thick region 10b, if the thickness of the metal mask is reduced to a thickness of 15 μm or less in order to prevent the influence of shadows, not only handling becomes difficult, but also breakage occurs. , The risk of deformation increases. As described above, in the present invention, the durability of the metal mask 10 is improved by the presence of the thick region 10b, and as a result, handling performance and prevention of breakage and deformation are achieved. That is, according to the metal mask 10 having the general region 10a and the thick region 10b, both the demand for preventing the occurrence of shadows and the demand for improving the durability of the vapor deposition mask, which are in a trade-off relationship, are satisfied at the same time. Can be made to.

The thickness of the thick region 10b is not particularly limited, and if the condition that it is thicker than the thickness of the general region 10a is satisfied, the thickness of the general region 10a, the size of the metal mask 10, the arrangement position of the thick region 10b, and the thick wall are satisfied. It can be appropriately set according to the arrangement pattern of the region 10b and the like. From the viewpoint of improving handling performance and reducing the risk of breakage and deformation, the thickness of the thick region 10b satisfies the condition of "thickness of general region 10a + 5 μm" or more, and is 15 μm or more, preferably 25 μm or more. The thickness is preferable. The upper limit of the thickness of the thick region 10b is not particularly limited, but is preferably 100 μm or less, more preferably 50 μm or less, and particularly preferably 35 μm or less. The thickness of the thick region 10b means "t" in FIG. 1 (b).

The method for forming the metal mask 10 having the general region 10a and the thick region 10b is not particularly limited. For example, a metal plate having or not having a slit is prepared, and the metal plate is prepared. By joining a metal member to a portion of the thick region 10b using a conventionally known joining method such as welding or bonding, a metal mask in which the thick region 10b and the general region 10a are integrated, or An integrated metal plate can be obtained. In this case, the total thickness of the metal plate and the metal member becomes the thickness of the thick region 10b, and the thickness of the metal plate becomes the thickness of the general region 10a as it is. Further, when a metal plate having no slit 15 is used to form an integrated metal plate in which the thick region 10b and the general region 10a are integrated, a conventionally known method, for example, etching is subsequently performed. By forming a slit 15 in the general region 10a or, if necessary, the thick region 10b by a processing method or a laser processing method, a metal mask 10 in which the general region 10a and the thick region 10b are integrated is obtained. be able to.

In addition to this, a metal plate with or without slits is prepared, and the surface of the metal plate that finally becomes the thick region 10b is masked, and the surface of the unmasked metal plate is masked. By slimming, a metal mask in which the thick region 10b and the general region 10a are integrated, or an integrated metal plate can be obtained. Details of the formation of the metal mask by slimming will be described later. In this case, the thickness of the metal plate is the thickness of the thick region 10b, and the thickness obtained by subtracting the thickness of the slimmed portion from the thickness of the metal plate is the thickness of the general region 10a.

Further, in the metal mask having the general region 10a and the thick region 10b, in order to sufficiently prevent the occurrence of shadows, as shown in FIGS. 1B and 6, the cross-sectional shape of the slit 15 is vapor-deposited. It is preferable to have a shape that spreads toward the source. By adopting such a cross-sectional shape, even if the thickness of the entire vapor deposition mask is increased for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or improving durability, the vapor deposition mask is discharged from the vapor deposition source. The thin-film deposition material can reach the object to be vapor-deposited without colliding with the surface of the slit 15 or the inner wall surface of the slit 15. More specifically, the angle formed by the lower bottom tip of the slit 15 of the metal mask 10 and the upper bottom tip of the slit 15 of the metal mask 10 and the bottom surface of the metal mask 10, in other words, the metal mask. In the thickness direction cross section of the inner wall surface forming the slit 15 of 10, the angle formed by the inner wall surface of the slit 15 and the surface of the metal mask 10 on the side in contact with the resin mask 20 (in the illustrated embodiment, the lower surface of the metal mask) is determined. It is preferably in the range of 5 ° to 85 °, more preferably in the range of 15 ° to 80 °, and even more preferably in the range of 25 ° to 65 °. In particular, even within this range, it is preferable that the angle is smaller than the vapor deposition angle of the vapor deposition machine used. With such a cross-sectional shape, even when the thickness of the metal mask 10 is relatively increased for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or improving durability, the metal mask 10 is discharged from the vapor deposition source. The vapor-deposited material can reach the object to be vapor-deposited without colliding with the inner wall surface of the slit 15. Thereby, the occurrence of shadow can be prevented more effectively. Note that FIG. 8 is a partial schematic cross-sectional view for explaining the relationship between the generation of shadows and the slit 15 of the metal mask 10. In FIG. 8C, the slit 15 of the metal mask 10 has a cross-sectional shape that expands toward the vapor deposition source side, and the end faces of the openings 25 of the resin mask 20 facing each other are substantially parallel. In order to more effectively prevent the generation of shadows, both the slit of the metal mask 10 and the opening 25 of the resin mask 20 have a cross-sectional shape in which the cross-sectional shape expands toward the vapor deposition source side. It is preferable to have.

The width W of the slit 15 (see FIG. 1A) is not particularly limited, but it is preferably designed to be at least shorter than the pitch between the adjacent openings 25. Specifically, as shown in FIG. 1A, when the slit 15 extends in the vertical direction, the width W in the horizontal direction of the slit 15 is shorter than the pitch P1 of the openings 25 adjacent in the horizontal direction. It is preferable to do so. Similarly, although not shown, when the slit 15 extends in the horizontal direction, the vertical width of the slit 15 is preferably shorter than the pitch P2 of the openings 25 adjacent in the vertical direction. On the other hand, the length L in the vertical direction when the slit 15 extends in the vertical direction is not particularly limited, and the vertical length of the metal mask 10 and the opening 25 provided in the resin mask 20 are not particularly limited. It may be appropriately designed according to the position.

Further, as shown in FIG. 11, the slit 15 extending continuously in the vertical direction or the horizontal direction may be divided into a plurality of slits 15 by the bridge 18. 11 is a front view of the vapor deposition mask 100 viewed from the metal mask 10 side, and one slit 15 continuously extending in the vertical direction shown in FIG. 1A is formed by the bridge 18 (slits 15a, An example divided into 15b) is shown. According to this form, the durability of the metal mask 10 can be further improved by the synergistic effect of the thick region 10b and the bridge 18, and the handling performance and the risk of breakage and deformation can be reduced. The width of the bridge 18 is not particularly limited, but is preferably about 5 μm to 20 μm. By setting the width of the bridge 18 within this range, the rigidity of the metal mask 10 can be effectively increased. The arrangement position of the bridge 18 is also not particularly limited, but it is preferable that the bridge 18 is arranged so that the slits after division overlap with the two or more openings 25.

The cross-sectional shape of the slit 15 formed in the metal mask 10 is not particularly limited, but as shown in FIGS. 1 (b) and 6 as in the opening 25 in the resin mask 20, the vapor deposition source is used. It is preferable that the shape is such that it spreads toward it.

The material of the metal mask 10 is not particularly limited, and conventionally known materials in the field of vapor deposition masks can be appropriately selected and used. Examples thereof include metal materials such as stainless steel, iron-nickel alloys, and aluminum alloys. .. Among them, the Invar material, which is an iron-nickel alloy, can be preferably used because it is less deformed by heat.

Further, when the vapor deposition mask 100 of the embodiment of the present invention is used to perform vapor deposition on the substrate, when it is necessary to arrange a magnet or the like behind the substrate and attract the vapor deposition mask 100 in front of the substrate by magnetic force. , It is preferable that the metal mask 10 is made of a magnetic material. The magnetic metal mask 10 is an iron-nickel alloy, pure iron, carbon steel, tungsten (W) steel, chromium (Cr) steel, cobalt (Co) steel, and an iron alloy containing cobalt, tungsten, chromium, and carbon. Some KS steels, MK steels containing iron, nickel and aluminum as main components, NKS steels made by adding cobalt and titanium to MK steels, Cu-Ni-Co steels, aluminum (Al) -iron (Fe) alloys, etc. Can be done. When the material itself forming the metal mask 10 is not a magnetic material, magnetism may be imparted to the metal mask 10 by dispersing the powder of the magnetic material in the material.

FIG. 12 is a front view showing another aspect of the vapor deposition mask 100 of the embodiment of the present invention including the metal mask 10 having the general region 10a and the thick region 10b. As shown in FIG. 12, in the front view of the vapor deposition mask 100 viewed from the metal mask 10 side, the openings 25 formed in the resin mask 20 seen from the slit 15 of the metal mask may be arranged alternately in the lateral direction. .. That is, the openings 25 adjacent to each other in the horizontal direction may be arranged so as to be displaced in the vertical direction. By arranging in this way, even when the resin mask 20 is thermally expanded, the expansion generated in each place can be absorbed by the opening 25, and the expansion can be prevented from accumulating and causing a large deformation. Can be done. Further, as shown in FIG. 12, the opening 25 formed in the resin mask 20 does not need to correspond to one pixel, and for example, 2 to 10 pixels may be combined into one opening 25.

9 (a) to 9 (d) are partial schematic cross-sectional views showing the relationship between the slit of the metal mask and the opening of the resin mask. In the illustrated form, the slit 15 of the metal mask and the opening of the resin mask are shown. The cross-sectional shape of the entire opening formed by 25 is stepped. As shown in FIG. 9, the generation of shadows can be effectively prevented by forming the cross-sectional shape of the entire opening into a stepped shape that spreads toward the vapor deposition source side. The cross-sectional shapes of the slit 15 of the metal mask and the resin mask 20 may be substantially parallel to each other as shown in FIGS. 9 (a), but as shown in FIGS. 9 (b) and 9 (c). In addition, only one of the slit 15 of the metal mask and the opening of the resin mask may have a cross-sectional shape that expands toward the vapor deposition source side. As described above, in order to more effectively prevent the generation of shadows, the slit 15 of the metal mask and the opening 25 of the resin mask are provided with FIGS. 1 (b), 6 and 9 (B). As shown in d), it is preferable that both have a cross-sectional shape that spreads toward the vapor deposition source side.

The width of the flat portion (reference numeral (X) in FIG. 9) in the stepped cross section is not particularly limited, but when the width of the flat portion (X) is less than 1 μm, the slit of the metal mask Due to the interference, the effect of preventing the generation of shadows tends to decrease. Therefore, in consideration of this point, the width of the flat portion (X) is preferably 1 μm or more. The preferable upper limit value is not particularly limited, and can be appropriately set in consideration of the size of the openings of the resin mask, the distance between the adjacent openings, and the like, and is, for example, about 20 μm.

9 (a) to 9 (d) show an example in which one opening 25 overlapping the slit 15 is provided in the horizontal direction when the slit extends in the vertical direction. As shown, when the slit extends in the vertical direction, two or more openings 25 overlapping the slit 15 may be provided in the horizontal direction. In FIG. 10, both the slit 15 of the metal mask and the opening 25 of the resin mask have a cross-sectional shape that expands toward the vapor deposition source side, and the opening 25 that overlaps with the slit 15 is laterally oriented. Two or more are provided.

(Manufacturing method of thin-film mask)
Next, a method for manufacturing a vapor deposition mask according to an embodiment of the present invention will be described. As shown in FIG. 16, the method for manufacturing the vapor deposition mask 100 according to the embodiment of the present invention includes a step of bonding the metal mask 10 provided with the slit 15 and the resin plate 30 (see FIG. 16A). A step of irradiating a laser from the metal mask side (see FIG. 16B) to form an opening corresponding to a pattern to be vapor-deposited on the resin plate 30 (see FIG. 16C). As the mask 10, a metal mask having a general region 10a provided with a slit 15 and a thick region 10b thicker than the general region 10a is used. Hereinafter, a method for producing a vapor deposition mask according to an embodiment of the present invention will be specifically described.

FIG. 16 is a process diagram for explaining a method for manufacturing a vapor deposition mask. 16 (a) to 16 (c) and 17 (a) to 17 (h) are all cross-sectional views.

(The process of bonding a metal mask with slits and a resin plate)
In preparing the laminate in which the metal mask 10 provided with the slit and the resin plate 30 are bonded together as shown in FIG. 16A, first, the metal mask provided with the slit is prepared. In the present invention, as the metal mask 10 prepared here, the metal mask 10 having the general region 10a and the thick-walled region 10b described in the vapor deposition mask 100 of the embodiment of the present invention is used. Hereinafter, an example of a preferable method for forming the metal mask 10 in which the slit 15 is provided and has the general region 10a and the thick region 10b will be described.

As an example of the method of forming the metal mask 10, the metal plate 11 is prepared as shown in FIG. 17 (a). Next, as shown in FIG. 17B, a part of the surface of the metal plate 11 is masked by the masking member 12. As the masking member 12, for example, a resist material, a dry film, or the like can be used. The masked portion finally becomes the thick region 10b. Next, as shown in FIG. 17 (c), the unmasked region on the surface of the metal plate 11 is removed by slimming processing within a range that does not penetrate the unmasked metal plate 11, thereby forming a general region. A metal plate 11a is obtained in which the 10a and the thick region 10b are integrated. If the masking member 12 has resistance to the processing method used for forming the slit 15, removal here is not particularly necessary.

In the slimming process for forming the general region 10a, a conventionally known method capable of removing the surface of the metal plate up to the thickness of the general region 10a can be appropriately selected and used. For example, an etching processing method using an etching material capable of etching the metal plate 11 can be mentioned.

Next, as shown in FIG. 17D, the metal plate 11a in which the general region 10a and the thick region 10b are integrated, and the resin plate 30 are bonded together. This method is also not particularly limited, and for example, various adhesives may be used, or a self-adhesive resin plate may be used. The size of the metal plate 11a and the resin plate 30 may be the same, but the size of the resin plate 30 is made smaller than that of the metal plate 11a in consideration of the subsequent fixing to the frame. , It is preferable to leave the outer peripheral portion of the metal plate 11a exposed.

Next, as shown in FIG. 17 (e), a masking member 12, for example, a resist material is applied to the surface of the general region 10a on the side of the metal plate 11a that does not come into contact with the resin plate 30. When the masking member used in the slimming step is removed, the masking member is also applied to the surface of the thick region 10b. The masking member 12 described with reference to FIG. 17B and the masking member described here may be the same or different. As the resist material used as the masking member, a resist material having good processability and desired resolution is used. Then, the resist pattern 13 is formed as shown in FIG. 17 (f) by exposing and developing using a mask on which the slit pattern is formed. Next, as shown in FIG. 17 (g), this resist pattern is used as an etching resistant mask and etched by an etching method. After the etching is completed, the resist pattern is washed and removed. As a result, as shown in FIG. 17 (h), a metal mask 10 in which a desired slit 15 is formed in a metal plate 11a having a general region 10a and a thick-walled region 10b can be obtained.

In the above, an example in which the metal plate 11a having the general region 10a and the thick region 10b is bonded to the resin plate 30 and then the slit 15 is formed in the metal plate 11a has been described, but before the metal plate 11a is bonded to the resin plate. , The slit 15 may be formed in the metal plate 11a. In this case, a method of simultaneously etching from both sides of the metal plate 11a may be used. As a method of forming the metal mask 10 in advance and then attaching it to the resin plate 30, the method described above can be used as it is.

(Step of fixing the metal mask to which the resin plate is attached to the frame)
This step is an arbitrary step in the manufacturing method according to the embodiment of the present invention, but instead of fixing the completed vapor deposition mask to the frame, the resin plate in the state of being fixed to the frame is opened later. Therefore, the position accuracy can be remarkably improved. When the completed vapor deposition mask 100 is fixed to the frame, the metal mask whose opening has been determined is fixed while being pulled with respect to the frame. Therefore, the aperture position coordinate accuracy is higher than that in the case of having this step. It will decrease.

The method of fixing the metal mask to which the resin plate is attached to the frame is not particularly limited, and for example, a conventionally known process method such as spot welding may be appropriately adopted.

Further, instead of this method, the metal mask 10 in which the slit 15 is formed and has the general region 10a and the thick region 10b is fixed to the frame, and then the metal mask 10 fixed to the frame and the resin plate 30 are used. May be pasted together. Also in this method, the position accuracy of the opening can be remarkably improved in the same manner as described above.

(A step of irradiating a laser from the metal mask side to form an opening corresponding to a pattern to be vapor-deposited on the resin plate)
Next, as shown in FIG. 16B, a laser is irradiated from the metal mask 10 side through the slit 15 to form an opening 25 corresponding to the pattern to be vapor-deposited on the resin plate 30, and the resin mask 20 is used. .. The laser device used here is not particularly limited, and a conventionally known laser device may be used. As a result, the vapor deposition mask 100 according to the embodiment of the present invention is obtained as shown in FIG. 16 (c).

Further, when the opening 25 is provided in the resin plate fixed to the frame, a reference plate (not shown) in which a pattern to be vapor-deposited, that is, a pattern corresponding to the opening 25 to be formed is provided in advance is prepared. With this reference plate attached to the surface of the resin plate on the side where the metal mask 10 is not provided, laser irradiation corresponding to the pattern of the reference plate may be performed from the metal mask 10 side. According to this method, the opening 25 can be formed in a so-called facing-to-face state in which laser irradiation is performed while observing the pattern of the reference plate bonded to the resin plate, and the dimensional accuracy of the opening is extremely high and high definition. Opening 25 can be formed. Further, in this method, since the opening 25 is formed while being fixed to the frame, it is possible to obtain a vapor deposition mask having excellent not only dimensional accuracy but also position accuracy.

When the above method is used, it is necessary that the pattern of the reference plate can be recognized by a laser irradiation device or the like from the metal mask 10 side via the resin plate 30. When the resin plate has a certain thickness, it is necessary to use a transparent plate, but as described above, a preferable thickness considering the influence of shadow, for example, about 3 μm to 25 μm. When the thickness is set, the pattern of the reference plate can be recognized even if the resin plate is colored.

The method of bonding the resin plate and the reference plate is also not particularly limited. For example, when the metal mask 10 is a magnetic material, a magnet or the like is arranged behind the reference plate to form the resin plate 30 and the reference plate. It can be pasted together by attracting. In addition to this, it is also possible to bond them by using an electrostatic adsorption method or the like. Examples of the reference plate include a TFT substrate having a predetermined opening pattern, a photomask, and the like.

Further, in the above, the slimming step has been described as a method for forming the general region 10a, but in the production method of one embodiment of the present invention, the slimming step may be performed between or after the steps described above. .. For example, in the method for forming the metal mask 10 described above, the thickness of the metal plate 11 becomes the thickness of the thick region 10b as it is, but if necessary, slimming is performed to adjust the thickness of the thick region 10b. You can also do it. Similarly, the thickness of the general region 10a can be adjusted.

For example, as the resin plate 30 serving as the resin mask 20 and the metal plate 11 serving as the metal mask 10, a metal plate having a thickness thicker than the preferable thickness described above, for example, a metal plate having a thickness further than the thickness of the thick region 10b may be used. When used, excellent durability and transportability can be imparted when the metal plate 11 or the resin plate 30 is transported alone during the manufacturing process. On the other hand, in order to prevent the generation of shadows and the like, it is preferable that the thickness of the vapor deposition mask 100 obtained by the production method of one embodiment of the present invention is the optimum thickness. The slimming step is a useful step for optimizing the thickness of the vapor deposition mask 100 while satisfying durability and transportability during or after the manufacturing process.

The slimming of the metal mask 10 and the thick region 10b of the metal plate 11 is performed during or after the steps described above on the surface of the metal plate 11 that does not come into contact with the resin plate 30, or the resin plate 30 of the metal mask 10. Alternatively, it can be realized by etching the surface on the side not in contact with the resin mask 20 with an etching material capable of etching the metal plate 11 or the metal mask 10. In this case, the general region 10a may be masked so that the thickness of the general region 10a does not fluctuate further, and the thickness of the general region 10a is adjusted at the same time as the slimming of the thick region 10b. You may go. In this case, masking to the general area 10a becomes unnecessary.

The same applies to the slimming of the resin plate 30 serving as the resin mask 20 and the slimming of the resin mask 20, that is, the optimization of the thickness of the resin plate 30 and the resin mask 20. An etching material capable of etching the material of the resin plate 30 or the resin mask 20 is applied to the surface of the resin plate 30 that does not come into contact with the metal plate 11 or the metal mask 10 or the surface of the resin mask 20 that does not come into contact with the metal mask 10. This can be achieved by using and etching. Further, after forming the thin-film deposition mask 100, both the metal mask 10 and the resin mask 30 can be etched to optimize the thickness of both.

(Evaporation mask preparation body)
Next, the vapor deposition mask preparation body according to the embodiment of the present invention will be described. The vapor deposition mask preparation body of the embodiment of the present invention is a vapor deposition mask obtained by laminating a metal mask provided with slits and a resin mask provided with an opening corresponding to a pattern to be vapor-deposited at a position overlapping the slits. A vapor-deposited mask preparation body for obtaining a metal mask, wherein a metal mask having a slit is laminated on one surface of a resin plate, and the metal mask has a general region provided with a slit and the general region. It is characterized by having a thicker thick region.

The vapor deposition mask preparation body of the embodiment of the present invention is common to the vapor deposition mask 100 of the embodiment of the present invention described above, except that the resin plate 30 is not provided with the opening 25, and is specific. The description is omitted. As a specific configuration of the thin-film deposition mask preparation body, a metal mask with a resin plate (see FIG. 17 (h)) prepared in the preparation step in the above-mentioned thin-film deposition mask manufacturing method can be mentioned.

According to the thin-film deposition mask preparation body of one embodiment of the present invention, by forming an opening in the resin plate of the thin-film deposition mask preparation body, both high definition and light weight can be satisfied even when the size is increased, and high definition is achieved. It is possible to obtain a thin-film deposition mask capable of forming a thin-film deposition pattern.

(Manufacturing method of organic semiconductor device)
The method for manufacturing an organic semiconductor device according to an embodiment of the present invention includes a step of forming a vapor deposition pattern by a vapor deposition method using a thin-film deposition mask with a frame, and the frame described below in the step of manufacturing the organic semiconductor device. It is characterized in that a thin-film deposition mask is used.

The method for manufacturing an organic semiconductor element of one embodiment, which comprises a step of forming a vapor deposition pattern by a vapor deposition method using a thin-film deposition mask with a frame, includes an electrode forming step of forming an electrode on a substrate, an organic layer forming step, and a counter electrode forming step. , A sealing layer forming step and the like, and a thin-film deposition pattern is formed on the substrate by a thin-film deposition method using a thin-film deposition mask with a frame in each arbitrary step. For example, when a vapor deposition method using a thin-film vapor deposition mask with a frame is applied to the light-emitting layer forming steps of each of the R, G, and B colors of the organic EL device, a thin-film deposition pattern of each color-emitting layer is formed on the substrate. The method for manufacturing an organic semiconductor device according to an embodiment of the present invention is not limited to these steps, and can be applied to any conventionally known step in manufacturing an organic semiconductor device using a vapor deposition method.

In the method for manufacturing an organic semiconductor device according to an embodiment of the present invention, the vapor deposition mask fixed to the frame in the step of forming the vapor deposition pattern is the vapor deposition mask according to the embodiment of the present invention described above. It is a feature.

Examples of the organic semiconductor device manufactured by the manufacturing method of the present invention include an organic layer, a light emitting layer, and a cathode electrode of an organic EL device. In particular, the method for manufacturing an organic semiconductor device of the present invention can be suitably used for manufacturing R, G, and B light emitting layers of an organic EL device that requires high-definition pattern accuracy.

The thin-film vapor deposition mask with a frame used for manufacturing an organic semiconductor device may satisfy the condition that the thin-film deposition mask according to the embodiment of the present invention described above is fixed to the frame, and other conditions. There is no particular limitation. The frame is not particularly limited as long as it is a member capable of supporting the vapor deposition mask, and for example, a metal frame, a ceramic frame, or the like can be used. Above all, the metal frame is preferable because it is easy to weld the vapor deposition mask to the metal mask and the influence of deformation and the like is small. Hereinafter, an example in which a metal frame is used as the frame will be mainly described. For example, as shown in FIG. 18, a vapor deposition mask 200 with a metal frame in which one vapor deposition mask 100 is fixed to the metal frame 60 may be used, and as shown in FIG. 19, a plurality of vapor deposition masks 60 may be used. You may use the thin-film deposition mask 200 with a frame in which the vapor deposition masks (four vapor deposition masks in the illustrated form) are fixed side by side in the vertical direction or the horizontal direction (fixed side by side in the horizontal direction in the illustrated form). 18 and 19 are front views of the vapor deposition mask 200 with a metal frame of one embodiment as viewed from the resin mask 20 side.

The metal frame 60 is a frame member having a substantially rectangular shape, and has an opening for exposing the opening 25 provided in the resin mask 20 of the vapor deposition mask 100 to be finally fixed to the vapor deposition source side. The material of the metal frame is not particularly limited, but a metal material having high rigidity, for example, SUS or an invar material is suitable.

The thickness of the metal frame is also not particularly limited, but is preferably about 10 mm to 30 mm from the viewpoint of rigidity and the like. The width between the inner peripheral end surface of the opening of the metal frame and the outer peripheral end surface of the metal frame is not particularly limited as long as the width can fix the metal frame and the metal mask of the vapor deposition mask, for example, 10 mm to A width of about 50 mm can be exemplified.

Further, the reinforcing frame 65 or the like may be present in the opening of the metal frame as long as the exposure of the opening 25 of the resin mask 20 constituting the vapor deposition mask 100 is not hindered. In other words, the opening of the metal frame 60 may have a structure divided by a reinforcing frame or the like. In the form shown in FIG. 18, a plurality of reinforcing frames 65 extending in the horizontal direction are arranged in the vertical direction, but a plurality of reinforcing frames extending in the vertical direction are arranged in place of the reinforcing frame 65 or in a plurality of rows in the horizontal direction. It may have been done. Further, in the form shown in FIG. 19, a plurality of reinforcing frames 65 extending in the vertical direction are arranged in the horizontal direction, but instead of or together with the reinforcing frame 65, the reinforcing frames extending in the horizontal direction are arranged in the vertical direction. A plurality of them may be arranged. By using the metal frame 60 in which the reinforcing frame 65 is arranged, when a plurality of the vapor deposition masks 100 according to the embodiment of the present invention are arranged and fixed to the metal frame 60 in the vertical direction and the horizontal direction, the reinforcing frame and the reinforcing frame 60 are used. The vapor deposition mask can be fixed to the metal frame 60 even at the position where the vapor deposition masks overlap.

The method for fixing the metal frame 60 and the vapor deposition mask 100 according to the embodiment of the present invention is also not particularly limited, and the metal frame 60 can be fixed by spot welding, adhesive, screwing or the like which is fixed by laser light or the like.

10 ... Metal mask 10a ... General area 10b ... Thick area 15 ... Slit 18 ... Bridge 20 ... Resin mask 25 ... Opening 60 ... Metal frame 100 ... Vapor deposition mask 200 ... Vapor deposition mask with frame

Claims (14)

A metal layer having a slit defined by the space shaped by the inner wall surface extending to the rear surface from the surface, the deposition mask and the resin layer are laminated with an open mouth portion required to form the deposition pattern at a position overlapping the slit And
The metal layer has a general region and a thick region thicker than the general region.
The slit is located in a part of the general area of the metal layer and
The shape of the vapor deposition mask when viewed in a plan view is rectangular, and the thick-walled region is arranged so as to extend in either the long side direction and the short side direction of the vapor deposition mask, or both. mask. The thick region is arranged so as to extend in the long side direction and the short side direction of the vapor deposition mask, and the thick region is arranged so as to extend in the long side direction and the short side direction of the vapor deposition mask. is continuous so as to surround the front KiHiraki opening, deposition mask according to claim 1. A metal layer having a slit defined by the space shaped by the inner wall surface extending to the rear surface from the surface, the deposition mask and the resin layer are laminated with an open mouth portion required to form the deposition pattern at a position overlapping the slit And
The metal layer has a general region and a plurality of columnar thick-walled regions thicker than the general region.
The slit is a vapor deposition mask located in a part of the general region of the metal layer. Thick regions of a plurality of the columnar-shaped, are arranged with a predetermined interval so as to surround the front KiHiraki opening, deposition mask according to claim 3. And a resin layer having an open mouth necessary for the formation of the deposition pattern, the laminated with a resin layer, a and deposition mask having a metal layer to expose a portion of the resin layer,
The metal layer has a general region and a columnar thick-walled region thicker than the general region.
When viewed the deposition mask from the metal layer side, the metal layer is arranged so that all look before KiHiraki opening, the deposition mask. A metal layer having a slit defined by the space shaped by the inner wall surface extending to the rear surface from the surface, the deposition mask and the resin layer are laminated with an open mouth portion required to form the deposition pattern at a position overlapping the slit And
The metal layer has a general region and a thick region thicker than the general region.
The slit is located in a part of the general area of the metal layer and
A thin-film deposition mask including a portion in which the thick-walled region becomes thicker as the distance from the boundary between the thick-walled region and the general region increases when the vapor-deposited mask is viewed in cross section. A thin-film deposition mask with a frame in which the thin-film deposition mask according to any one of claims 1 to 6 is fixed to a frame. The framed vapor deposition mask according to claim 7, wherein at least a part of the thick region overlaps with the frame. A vapor deposition mask preparation body for obtaining the vapor deposition mask according to any one of claims 1 to 6.
And the general area, the general area has a thick region thicker than the metal layer located slit in a part of the general area, and the front of the resin layer before KiHiraki opening is formed Laminated vapor deposition mask preparation. It is a method of manufacturing a thin-film mask.
A step of preparing a metal layer having a slit defined by the space shaped by the inner wall surface extending to the rear surface from its surface, a resin layer with a metal layer and a resin layer are laminated before the open mouth portion is formed,
The metal layer-side is irradiated with a laser from and a step of forming a open mouth required to form the deposition pattern on the resin layer of the resin layer with a metal layer,
The shape of the manufactured vapor deposition mask when viewed in a plan view is rectangular.
In the manufactured vapor deposition mask, the metal layer has a general region and a thick region thicker than the general region, and the slit is located in a part of the general region of the metal layer. A method for manufacturing a thin-film deposition mask, wherein the thick-walled region is arranged so as to extend in either one or both of the long side direction and the short side direction of the vapor deposition mask. It is a method of manufacturing a thin-film mask.
A step of preparing a metal layer having a slit defined by the space shaped by the inner wall surface extending to the rear surface from its surface, a resin layer with a metal layer and a resin layer are laminated before the open mouth portion is formed,
The metal layer-side is irradiated with a laser from and a step of forming a open mouth required to form the deposition pattern on the resin layer of the resin layer with a metal layer,
In the manufactured vapor deposition mask, the metal layer has a general region and a plurality of columnar thick-walled regions thicker than the general region, and the slit is formed in a part of the general region of the metal layer. A method of manufacturing a vapor deposition mask that is located. It is a method of manufacturing a thin-film mask.
And the resin layer before the opening mouth portion is formed, a step of a metal layer to expose a portion of the resin layer to prepare a resin layer-metal layer laminated,
The metal layer-side is irradiated with a laser from and a step of forming a open mouth required to form the deposition pattern on the resin layer of the resin layer with a metal layer,
In the manufactured vapor deposition mask, the metal layer has a general region and a columnar thick-walled region thicker than the general region.
When viewed the deposition mask from the metal layer side, the metal layer, prior to all KiHiraki opening is arranged to be visible, the manufacturing method of the deposition mask. It is a method of manufacturing a thin-film mask.
A step of preparing a metal layer having a slit defined by the space shaped by the inner wall surface extending to the rear surface from its surface, a resin layer with a metal layer and a resin layer are laminated before the open mouth portion is formed,
The metal layer-side is irradiated with a laser from and a step of forming a open mouth required to form the deposition pattern on the resin layer of the resin layer with a metal layer,
In the manufactured vapor deposition mask, the metal layer has a general region and a plurality of columnar thick-walled regions thicker than the general region, and the slit is formed in a part of the general region of the metal layer. Located and
A method for producing a thin-film deposition mask, which comprises a portion in which the thick-walled region becomes thicker as the distance from the boundary between the thick-walled region and the general region increases when the vapor-deposited mask is viewed in cross section. A method for manufacturing organic semiconductor devices.
Including the step of forming a thin-film deposition pattern on a thin-film deposition object using a thin-film deposition mask.
As the vapor deposition mask, the vapor deposition mask according to any one of claims 1 to 6, the vapor deposition mask with a frame according to claim 7 or 8, and the vapor deposition mask according to any one of claims 10 to 13. A method for manufacturing an organic semiconductor element using any of the vapor deposition masks manufactured by the above manufacturing method.

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