WO2013039196A1 - Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method - Google Patents

Vapor-deposition mask, vapor-deposition mask manufacturing method, and thin-film pattern forming method Download PDF

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Publication number
WO2013039196A1
WO2013039196A1 PCT/JP2012/073617 JP2012073617W WO2013039196A1 WO 2013039196 A1 WO2013039196 A1 WO 2013039196A1 JP 2012073617 W JP2012073617 W JP 2012073617W WO 2013039196 A1 WO2013039196 A1 WO 2013039196A1
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Prior art keywords
pattern
thin film
vapor deposition
deposition mask
substrate
Prior art date
Application number
PCT/JP2012/073617
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French (fr)
Japanese (ja)
Inventor
重人 杉本
梶山　康一
水村　通伸
修二 工藤
江梨子 木村
マハール アジズ ハニー
佳敬 梶山
Original Assignee
株式会社ブイ・テクノロジー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from JP2011203155A external-priority patent/JP5935101B2/en
Priority claimed from JP2011232538A external-priority patent/JP5953566B2/en
Priority claimed from JP2011242089A external-priority patent/JP6078741B2/en
Priority claimed from JP2011242090A external-priority patent/JP5899585B2/en
Priority claimed from JP2011255298A external-priority patent/JP5517308B2/en
Priority claimed from JP2012033657A external-priority patent/JP5884543B2/en
Priority claimed from JP2012038101A external-priority patent/JP2013173968A/en
Priority claimed from JP2012080707A external-priority patent/JP5958804B2/en
Priority to CN201280044893.9A priority Critical patent/CN103797149B/en
Priority to KR1020147009752A priority patent/KR102078888B1/en
Application filed by 株式会社ブイ・テクノロジー filed Critical 株式会社ブイ・テクノロジー
Publication of WO2013039196A1 publication Critical patent/WO2013039196A1/en
Priority to US14/214,428 priority patent/US9334556B2/en
Priority to US14/746,727 priority patent/US9586225B2/en
Priority to US15/071,125 priority patent/US9555434B2/en
Priority to US15/071,116 priority patent/US9555433B2/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to a vapor deposition mask for forming a plurality of striped thin film patterns on a substrate in parallel with a constant arrangement pitch, and particularly to a vapor deposition mask and vapor deposition mask capable of forming a high-definition thin film pattern.
  • the present invention relates to a manufacturing method and a thin film pattern forming method.
  • this type of vapor deposition mask has an opening having a shape corresponding to a predetermined pattern. After aligning the substrate, the mask is brought into close contact with the substrate and then patterned on the substrate through the opening. Vapor deposition was performed (for example, refer to Patent Document 1).
  • the other vapor deposition mask is a metal mask made of a ferromagnetic material provided with a plurality of openings corresponding to a predetermined vapor deposition pattern, and is in close contact with the substrate so as to cover one surface of the substrate and the other surface of the substrate. It was fixed using the magnetic force of the magnet arranged on the side, and the deposition material was attached to one surface of the substrate through the opening in the vacuum chamber of the vacuum deposition apparatus to form a thin film pattern (for example, patent Reference 2).
  • the vapor deposition mask described in Patent Document 1 is generally formed by forming an opening corresponding to a thin film pattern on a thin metal plate by, for example, etching or the like.
  • etching for example, it is difficult to form a high-definition thin film pattern of 300 dpi or more due to the influence of misalignment and warpage due to thermal expansion of the metal plate.
  • the vapor deposition mask described in Patent Document 2 has a thinner metal plate as in the vapor deposition mask described in Patent Document 1, although the adhesion to the substrate is improved as compared with the vapor deposition mask described in Patent Document 1. Since the opening corresponding to the thin film pattern is formed by, for example, etching or the like, it is difficult to form the opening with high accuracy. For example, it is difficult to form a high-definition thin film pattern of 300 dpi or more.
  • an object of the present invention is to provide a vapor deposition mask, a vapor deposition mask manufacturing method, and a thin film pattern forming method capable of coping with such problems and forming a high-definition thin film pattern.
  • a vapor deposition mask is a vapor deposition mask for vapor-depositing a thin film pattern having a predetermined shape on a substrate, and forming the predetermined thin-film pattern on the substrate.
  • it is configured to include a resin film that transmits visible light and has an opening pattern that penetrates the same thin film pattern and shape.
  • a metal member is provided on the outer side of the opening pattern of the film.
  • the metal member may be a thin plate that has an opening having a larger size than the opening pattern corresponding to the opening pattern and is in close contact with one surface of the film.
  • the metal member may be a plurality of thin pieces distributed on one surface or inside of the film.
  • a method of manufacturing a vapor deposition mask wherein a resin film that transmits visible light has the same shape and dimension as a thin film pattern corresponding to a predetermined thin film pattern formation region on a substrate.
  • a method of manufacturing a vapor deposition mask that is produced by forming an opening pattern, wherein the thin film pattern is arranged on a substrate to be vapor deposited, or arranged at the same arrangement pitch as the thin film pattern, and the thin film pattern and shape dimensions A first step of closely contacting the film on a reference substrate provided with the same plurality of reference patterns, and a film formation region on the substrate to be deposited or on the reference substrate or the film corresponding to the reference pattern And a second step of forming an opening pattern having the same shape and dimension as the thin film pattern.
  • the first step includes forming a mask member on one surface of the film by closely contacting a metal member provided with an opening having a shape dimension larger than that of the thin film pattern corresponding to the thin film pattern. It is desirable that the thin film pattern formation region on the deposition target substrate or the reference substrate or a portion corresponding to the reference pattern is positioned so as to be positioned in the opening.
  • the second step is performed by irradiating the film portion with laser light.
  • the second step is to irradiate a laser beam with a constant energy density to process the film at a constant speed to form a hole with a constant depth, and then lower the energy density at the bottom of the hole.
  • the laser beam is irradiated and processed at a speed slower than the speed to penetrate the hole.
  • the hole is formed in the film by irradiating a laser beam having a constant energy density, and then the reactive gas reacts with the carbon of the film to vaporize the carbon, or is reactive.
  • the opening portion may be formed by etching the bottom of the hole with radical ions generated by converting the gas into a plasma and penetrating the hole.
  • the laser light used here has a wavelength of 400 nm or less.
  • a method of manufacturing a vapor deposition mask wherein a resin film that transmits visible light has the same shape and dimension as the thin film pattern corresponding to a predetermined thin film pattern formation region on the substrate.
  • the film is etched from the other surface side of the film, the opening area on the one surface side of the film is the same as the area of the thin film pattern, and the opening area on the other surface side of the film It is desirable to form the opening pattern having a larger opening area on the one surface side.
  • a thin film pattern forming method that penetrates a resin film that transmits visible light and has the same shape and dimension as a predetermined thin film pattern formation region on a substrate.
  • a thin film pattern forming method for forming a vapor deposition mask by forming an opening pattern, and forming a thin film pattern using the vapor deposition mask, the first step of closely contacting the film on the substrate, and on the substrate A second step of irradiating a portion of the film corresponding to the formation region of the thin film pattern with a laser beam, forming an opening pattern having the same shape and dimension as the thin film pattern on the film of the portion;
  • a fourth step of separating the disk is intended to include.
  • the substrate is placed on a stage having an internal chuck means, and a shape dimension is larger on one surface of the film than the thin film pattern corresponding to the thin film pattern.
  • a mask member formed by closely contacting a metal member made of a magnetic material or a non-magnetic material provided with an opening so that a formation region of the thin film pattern on the substrate is located in the opening. It is preferable that the metal member is adsorbed onto the substrate by the chuck means to sandwich the film.
  • the thin film pattern forming method according to the fifth aspect of the present invention penetrates through a resin film that transmits visible light and has the same shape and dimension as a predetermined thin film pattern formation region on the substrate.
  • a second step of forming a thin film pattern is forming a thin film pattern.
  • the thin film pattern of the substrate placed on the chuck means is placed with the opening pattern in a state where the metal member side of the vapor deposition mask is attracted to and held by the flat surface of the holding means.
  • the metal member is adsorbed by the chuck means, and the vapor deposition mask is preferably transferred from the holding means onto the substrate.
  • the thin film pattern is a plurality of types of thin film patterns and the opening pattern formed in the film is formed corresponding to one thin film pattern among the plurality of types of thin film patterns
  • the step of peeling the vapor deposition mask from the substrate, and the opening pattern of the vapor deposition mask on the other thin film pattern of the substrate After aligning with the formation region, placing the vapor deposition mask on the substrate, and depositing on the formation region of the other thin film pattern through the opening pattern of the vapor deposition mask to form another thin film pattern And step.
  • the thin film patterns are a plurality of types of thin film patterns formed by arranging at a constant arrangement pitch, and the opening pattern formed in the film corresponds to one thin film pattern among the plurality of types of thin film patterns. If formed, the first step to the second step are performed to form the one thin film pattern, and then the vapor deposition mask is moved to the plurality of types by the same dimension as the arrangement pitch of the plurality of types of thin film patterns. Sliding on the substrate in the direction in which the thin film patterns are aligned, and depositing another thin film pattern on the substrate through the opening pattern of the deposition mask to form another thin film pattern; , May be performed.
  • the opening pattern through which the vapor deposition material passes is processed and formed into a film having a thickness smaller than that of the metal mask, the formation accuracy of the opening pattern can be improved. Therefore, it is possible to form a high-definition thin film pattern.
  • vapor deposition mask used as the foundation of this invention, (a) is a top view, (b) is a side view. It is a figure explaining the manufacturing method of 3rd Embodiment of the vapor deposition mask by this invention, Comprising: It is sectional drawing which shows the process of forming the member for masks. It is a figure explaining the manufacturing method of 3rd Embodiment of the vapor deposition mask by this invention, Comprising: It is a top view which shows an opening pattern formation process. It is a top view which shows the modification of 3rd Embodiment of the vapor deposition mask by this invention.
  • FIG. 4 is a partially enlarged view of (c). It is process drawing explaining manufacture of 4th Embodiment of the vapor deposition mask by this invention. It is a top view which shows one structural example of the film used for 4th Embodiment of the vapor deposition mask of this invention. It is a top view which shows the other structural example of the film used for the vapor deposition mask of this invention.
  • FIG. 51 is a cross-sectional view showing a configuration example of a TFT substrate used in the thin film pattern forming method of FIGS. 48 to 50.
  • FIG. 1 is a cross-sectional explanatory view showing a first embodiment of a thin film pattern forming method performed using a vapor deposition mask according to the present invention.
  • the vapor deposition mask according to the present invention includes a resin film that transmits visible light and has an opening pattern that penetrates the thin film pattern and has the same shape and dimension as a predetermined thin film pattern formation region on the substrate.
  • the thin film pattern forming method is manufactured in the implementation process of the first embodiment.
  • the substrate is the TFT substrate 1 of the organic EL display device and the thin film pattern is the R organic EL layer 3R formed on the anode electrode 2R corresponding to red (R)
  • the R organic EL layer 3R is The first embodiment of the vapor deposition mask according to the present invention will be described while explaining the first embodiment of the thin film pattern forming method for forming.
  • the R organic EL layer 3R is formed by sequentially vapor-depositing on the R-compatible anode electrode 2R so as to have a general laminated structure such as a hole injection layer, a hole transport layer, an R light emitting layer, and an electron transport layer.
  • a general laminated structure such as a hole injection layer, a hole transport layer, an R light emitting layer, and an electron transport layer.
  • the R organic EL layer 3R will be described as being formed by a single vapor deposition step.
  • a first step of installing a resin film 4 that transmits visible light on a TFT substrate (also simply referred to as “substrate”) 1 and an R on the TFT substrate 1 are described.
  • a portion of the corresponding anode electrode 2R is irradiated with a laser beam L1 having a constant energy density, and the film 4 in the portion is dug down to a certain depth at a constant speed to form a hole portion 5.
  • the hole portion 5 is formed at the bottom of the hole portion 5.
  • the laser beam L2 having a reduced energy density is irradiated, the bottom of the hole 5 is slowly processed at a speed slower than the above speed to penetrate the hole 5, and an opening pattern 6 having the same shape and dimension as the R organic EL layer 3 is formed.
  • a second step of forming the first embodiment of the vapor deposition mask 7 according to the present invention, and a third step of vapor-depositing the R organic EL layer 3 on the R corresponding anode electrode 2R through the opening pattern 6 of the vapor deposition mask 7 Ste And flop, a fourth step of separating the deposition mask 7, and the execution.
  • ultraviolet light such as polyethylene terephthalate (PET) or polyimide having a thickness of about 10 ⁇ m to 30 ⁇ m is formed above the surface of the TFT substrate 1 where the anode electrodes 2R to 2B for each color are formed.
  • PET polyethylene terephthalate
  • polyimide having a thickness of about 10 ⁇ m to 30 ⁇ m is formed above the surface of the TFT substrate 1 where the anode electrodes 2R to 2B for each color are formed.
  • the film 4 is placed on the surface of the TFT substrate 1 as shown in FIG.
  • the upper surface of the film 4 is preferably pressed uniformly with an elastic member such as urethane rubber so that the film 4 is in close contact with the surface of the TFT substrate 1.
  • an adhesive layer may be provided on the adhesion surface of the film 4 with the TFT substrate 1, and the film 4 may be adhered to the TFT substrate 1 surface via this adhesion layer.
  • the film which provided the self-adhesion function can also be utilized.
  • the film 4 may be electrostatically attracted to the surface of the TFT substrate 1 using an electrostatic chuck or the like.
  • a metal member that is configured to include a magnetic material and that has an opening having a shape dimension larger than the pattern of the organic EL layer Is placed on the TFT substrate 1 so that the anode electrode 2R corresponding to R is positioned in the opening, and the metal member is adsorbed onto the TFT substrate 1 by the static magnetic field of the magnet to form the film 4 May be adhered to the surface of the TFT substrate 1.
  • the position of the anode electrode 2R corresponding to R is detected by an imaging means (not shown) through the film 4, and the irradiation position of the laser beam is positioned on the anode electrode 2R corresponding to R. .
  • an excimer laser having a wavelength of 400 nm or less, for example, KrF248 nm first, as shown in FIG. 1B, energy is applied to the portion of the film 4 corresponding to the anode electrode 2R corresponding to R on the TFT substrate 1.
  • the laser beam L1 having a density of 1 J / cm 2 to 20 J / cm 2 is irradiated and the hole 5 is formed at high speed, leaving a layer having a thickness of, for example, about 2 ⁇ m immediately before the anode electrode 2R of the underlayer is exposed.
  • the irradiation with the laser beam L1 is temporarily stopped.
  • the bottom of the hole 5 is irradiated with laser light L2 having an energy density reduced to 0.1 J / cm 2 or less, preferably 0.06 J / cm 2 or less,
  • the bottom part of the part 5 is slowly processed to penetrate the hole part 5 to form the vapor deposition mask 7 of the present invention having the opening pattern 6 (first embodiment).
  • the film 4 Since the carbon bonds of the film 4 are broken and removed in an instant by the light energy of the ultraviolet laser beams L1 and L2, clean drilling without residue can be performed.
  • the film 4 is processed at a high speed by irradiating the laser beam L1 having a high energy density, and thereafter, the processing is performed slowly by the laser beam L2 having a reduced energy density. Without sacrificing, it is possible to efficiently process only the film 4 while suppressing damage to the anode electrode 2R, which is the underlayer.
  • the second step can be performed as follows. That is, while stepping the TFT substrate 1 in a certain direction, the anode electrode 2R corresponding to R is passed through a microlens array in which a plurality of microlenses are arranged in a row in a direction crossing the moving direction of the TFT substrate 1.
  • the opening patterns 6 may be formed on the film 4 by irradiating the laser beams L1 and L2. Alternatively, the opening pattern 6 may be formed on the film 4 by irradiating the laser beams L1 and L2 while stepping the TFT substrate 1 in a two-dimensional direction in a plane parallel to the substrate surface.
  • the opening patterns 6 may be formed in the film 4 by irradiating the laser beams L1 and L2 through a microlens array provided with a plurality of microlenses corresponding to the plurality of anode electrodes 2R. Further, the elongated laser beams L1 and L2 may be generated by a cylindrical lens to form the stripe-shaped opening pattern 6 in the film 4, and the stripe-shaped R organic EL layer 3R (thin film pattern) may be formed.
  • FIG. 2 is a cross-sectional view showing another manufacturing method of the first embodiment of the vapor deposition mask according to the present invention, which is performed in the second step of the first embodiment of the thin film pattern forming method.
  • this manufacturing method first, as shown in FIG. 2 (a), the laser beam L1 of the energy density in the portion of the anode electrode 2R of R corresponding on the TFT substrate 1 is 1J / cm 2 ⁇ 20J / cm 2 After irradiating and forming the hole 5 by digging the film 4 of the part to a certain depth, the reactive gas 8 reacts with the carbon of the film 4 to vaporize the carbon, as shown in FIG.
  • the bottom of the hole 5 is irradiated with laser light L2 having an energy density reduced to 0.1 J / cm 2 or less, preferably 0.06 J / cm 2 or less, and the bottom of the hole 5 is slowly processed. Then, the hole 5 is penetrated to form an opening pattern 6 as shown in FIG.
  • the reactive gas 8 for example, ozone (O 3 ) gas, a mixed gas of tetrafluoromethane (CF 4 ) and ozone, or the like can be used.
  • the scattered material by the laser processing adheres to the surface of the film 4 or the opening pattern 6, the scattered material is removed by etching with the reactive gas 8 so that the surface of the anode electrode 2 ⁇ / b> R in the opening pattern 6 is removed.
  • the organic EL layer 3 can be washed and the adhesion of the organic EL layer 3 to the surface of the anode electrode 2R can be enhanced to improve the yield when forming the organic EL layer.
  • FIG. 3 is a cross-sectional view showing still another manufacturing method of the first embodiment of the vapor deposition mask according to the present invention, which is performed in the second step of the first embodiment of the thin film pattern forming method.
  • this manufacturing method first, 3 to a portion of the anode electrode 2R e.g. R corresponding on the TFT substrate 1 (a), the example 1 J / cm 2 ⁇ laser beam energy density of 20 J / cm 2 After irradiating L1 and digging up the film 4 of the part to a certain depth at a constant speed to form the hole 5, the irradiation of the laser beam L1 is stopped, and then the film 4 as shown in FIG.
  • the film 4 is etched by a reactive gas 8 such as ozone (O 3 ) gas or a mixed gas of carbon tetrafluoride (CF 4 ) and ozone, which reacts with carbon to vaporize the carbon. As shown in c), it is carried out so as to penetrate the hole 5 of the film 4 to form an opening pattern 6 having a fixed shape.
  • a reactive gas 8 such as ozone (O 3 ) gas or a mixed gas of carbon tetrafluoride (CF 4 ) and ozone
  • the film 4 is efficiently etched using the etching selectivity between the film 4 of the reactive gas 8 and the anode electrodes 2R to 2B without damaging the anode electrodes 2R to 2B.
  • the surface of the anode electrodes 2R to 2B in the opening pattern 6 can be cleaned by etching with the reactive gas 8, and the adhesion of the organic EL layer to the anode electrodes 2R to 2B can be enhanced to form the organic EL layer.
  • the yield can be improved.
  • the bottom of the hole 5 is slowly processed by etching to penetrate the hole 5, so that the processing time is sacrificed. Without damaging, it is possible to efficiently process only the film 4 while suppressing damage to the anode electrodes 2R to 2B as the underlayer.
  • the film 4 is plasmatized with oxygen (O 2 ) gas or a mixed gas of carbon tetrafluoride (CF 4 ) and oxygen, etc. instead of the reactive gas 8 and is etched with the generated radical ions. Also good.
  • oxygen O 2
  • CF 4 carbon tetrafluoride
  • an opening pattern 6 having the same shape and dimension as the thin film pattern is formed corresponding to a predetermined thin film pattern formation region on the substrate.
  • the resin film 4 is composed of only the resin film 4 that transmits visible light.
  • an R organic EL layer is formed on the R corresponding anode electrode 2R of the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 7 using a vacuum vapor deposition apparatus.
  • 3R is formed by vapor deposition.
  • the deposition mask 7 moves and the opening pattern 6 of the deposition mask 7 and the R corresponding anode electrode 2R of the TFT substrate 1 are not displaced, there is no possibility that the anode electrode 2G, 2B is electrostatically attracted and fixed. .
  • the vapor deposition mask 7 since there is no possibility that the vapor deposition mask 7 is in close contact with the surface of the TFT substrate 1 and a gap is formed between the lower surface of the vapor deposition mask 7 and the upper surface of the TFT substrate 1, the vapor deposition molecules wrap around and adhere to the gap. The problem of deteriorating the formation accuracy of the film can also be avoided.
  • the third step before the R organic EL layer 3R is formed, it is preferable to remove impurities from the anode electrode 2R corresponding to R.
  • the impurities here include, for example, residues such as the film 4 ablated in the second step.
  • etching or laser is used.
  • a mixed gas of O 2 (oxygen), O 2 and Ar (argon), or a mixed gas of O 2 , Ar and CF 4 (carbon tetrafluoride) was used as an etching gas. It is preferable to remove impurities by dry etching.
  • a laser a green laser having an energy density of about 0.5 J / cm 2 and a wavelength of 532 nm, a 355 nm UV laser, a 266 nm DUV laser, or the like can be used.
  • O 2 a mixed gas of O 2 and Ar, the gas mixture of O 2 and Ar and CF 4, or O 3 (ozone) is preferably used in combination as the assist gas and the like.
  • an electrode material may be deposited on the R-compatible anode electrode 2R from which impurities have been removed.
  • An electrode material here means the material which forms an anode electrode, for example, Al (aluminum), Mg (magnesium), etc. are contained.
  • the electrode material is deposited on the surface of the anode electrode 2R corresponding to R through the opening pattern 6 formed in the film 4 by a method such as sputtering, vacuum deposition, and ion plating.
  • the edge of the vapor deposition mask 7 is lifted upward to mechanically peel the vapor deposition mask 7 from the surface of the TFT substrate 1.
  • the R organic EL layer 3R remains on the R corresponding anode electrode 2R, and the R organic EL layer forming step is completed.
  • the thickness of the vapor deposition mask 7 is about 10 ⁇ m to 30 ⁇ m, whereas the thickness of the R organic EL layer 3R is about 100 nm.
  • the R organic EL layer 3R attached to the sidewall of the opening pattern 6 of the vapor deposition mask 7 Since the thickness of is very thin, when the vapor deposition mask 7 is peeled off, the vapor deposition mask 7 and the R organic EL layer 3R on the anode electrode 2R corresponding to R are easily separated. Therefore, there is no possibility that the R organic EL layer 3R on the R-compatible anode electrode 2R is peeled off when the vapor deposition mask 7 is peeled off.
  • each anode electrode 2G is removed when the deposition mask 7 is peeled off.
  • 2B may be turned off or a reverse polarity voltage may be applied.
  • peeling of the vapor deposition mask 7 can be performed easily.
  • a force larger than the adhesive force of the adhesive may be applied to the vapor deposition mask 7 and mechanically peeled off.
  • the pressure-sensitive adhesive when the pressure-sensitive adhesive is cured by irradiation with ultraviolet rays, the pressure-sensitive adhesive is cured by irradiating with ultraviolet rays to reduce the adhesive force at the interface between the vapor deposition mask 7 and the TFT substrate 1 surface. It is good to peel.
  • organic EL layers 3G and 3B of corresponding colors are formed on the anode electrodes 2G and 2B for G and B, respectively.
  • a transparent conductive film of ITO is formed on the TFT substrate 1, and a transparent protective substrate is further bonded thereon to form an organic EL display device.
  • the film 4 is in the form of a sheet.
  • the present invention is not limited to this and is a material capable of ultraviolet laser ablation. If it exists, it may be liquid.
  • the film 4 is formed by spin-coating or dip-coating a liquid material on the surface of the TFT substrate 1 and then drying it.
  • a transparent electrode layer may be further formed on the organic EL layer 3R when the organic EL layer 3R is formed in the third step.
  • the transparent electrode layer functions as a barrier layer, and it is possible to prevent the organic EL layer 3R from being dissolved by the liquid film 4.
  • FIGS. 4 to 8 are process diagrams showing a second embodiment of a thin film pattern forming method performed using the second embodiment of the vapor deposition mask according to the present invention.
  • a method of manufacturing an organic EL display device according to the second embodiment will be described in which the thin film pattern is an organic EL layer.
  • This organic EL display device manufacturing method is a method of manufacturing an organic EL display device by forming an organic EL layer of a corresponding color on an anode electrode on a TFT substrate, and a red (R) organic EL layer forming step, It consists of a green (G) organic EL layer forming step, a blue (B) organic EL layer forming step, and a cathode electrode forming step.
  • FIG. 4 is a cross-sectional explanatory view showing the R organic EL layer forming step.
  • This R organic EL layer forming step is a step in which an organic material is heated in a vacuum to form an R organic EL layer 3R on the R-compatible anode electrode 2R of the TFT substrate 1, and is formed on a thin plate made of a magnetic material.
  • the second embodiment of the vapor deposition mask according to the present invention is formed by irradiating the film 4 corresponding to the anode electrode 2R with the laser beam L and providing the opening 4 with the same shape and dimension as the pattern of the R organic EL layer 3R on the film 4 of the portion.
  • a fifth step for forming a form (hereinafter referred to as “evaporation mask 14”) and an R pattern corresponding to the R electrode on the TFT substrate 1 through the opening pattern 6 of the deposition mask 14 R
  • a sixth step for forming the organic EL layer 3R by vapor deposition, and a seventh step (see (g) in the same figure) for lifting the vapor deposition mask 14 in the arrow + Z direction shown in the figure and peeling it off.
  • the It is intended to row.
  • a plurality of rows R of the TFT substrate 1 are applied to a metal member 10 having a thickness of about 15 ⁇ m to 50 ⁇ m made of a magnetic material such as nickel, nickel alloy, invar or invar alloy.
  • a plurality of elongated strips having a size sufficient to accommodate a plurality of R-compatible anode electrodes 2R arranged in a single row as shown in FIG. 5A at the same pitch as the arrangement pitch of the anode electrodes 2R.
  • an adhesive is provided on one surface of the metal member 10 as shown in FIG.
  • a film 4 capable of ultraviolet laser ablation such as polyethylene terephthalate (PET) or polyimide having a thickness of about 10 ⁇ m to 30 ⁇ m is pasted, and then partially enlarged in FIG. And the film 4, for example, dry etching the metal member 10 side Suyo, a mask member 11 is thinned to a few ⁇ m, for example, about the thickness of the film 4 of the portion corresponding to the opening 9. This makes it possible to form a fine opening pattern with high accuracy.
  • the etching of the film 4 may be performed from the side opposite to the metal member 10 or from both sides. Further, the etching of the film 4 may be wet etching instead of dry etching.
  • the metal member 10 may be formed by plating in an outer region of a portion corresponding to the opening 9 on one surface of the film 4.
  • the anode electrodes 2R, 2G, 2B of the TFT substrate 1 are placed on a magnetic chuck stage 13 provided with, for example, a permanent magnet as the static magnetic field generating means 12 inside. It is placed with the surface on which is formed facing upward.
  • the magnetic chuck stage 13 has, for example, a smooth attracting surface.
  • the static magnetic field generating means 12 is moved up and down by a lifting means (not shown).
  • the static magnetic field generating means 12 is lowered to the bottom of the magnetic chuck stage 13.
  • the mask member 11 is magnetically arranged so that the plurality of R-compatible anode electrodes 2 ⁇ / b> R completely fit within the opening 9 of the metal member 10. Positioning is performed by moving and rotating in a two-dimensional direction within a plane parallel to the upper surface of the chuck stage 13.
  • the mask member 11 can freely move on the surface of the TFT substrate 1.
  • the TFT substrate 1 is positioned on the top surface of the magnetic chuck stage 13 to form a recess so that the TFT substrate 1 can be placed.
  • a positioning pin is provided outside the recess, and a positioning hole is formed in the metal member 10 corresponding to the positioning pin. If formed, the TFT substrate 1 and the mask member 11 can be aligned only by fitting the positioning hole into the positioning pin.
  • the static magnetic field generating means 12 is raised to the top of the magnetic chuck stage 13 to cause the static magnetic field to act on the metal member 10, and the metal member 10 is moved to the TFT substrate.
  • the film 4 is adhered to the upper surface of the TFT substrate 1 by adsorbing to the 1 side.
  • the R-compatible anode electrode 2R on the TFT substrate 1 is irradiated with the laser light L, and the film 4 on the anode electrode 2R is R-compatible.
  • An opening pattern 6 having substantially the same shape and dimension as the anode electrode 2R is provided to form a vapor deposition mask 14 (second embodiment) according to the present invention.
  • the laser used here is an excimer laser having a wavelength of 400 nm or less, for example, a KrF248 nm laser.
  • the carbon bonds of the film 4 such as polyethylene terephthalate (PET) or polyimide are broken and removed in an instant, so a clean drilling process that suppresses the generation of residues It can be performed.
  • PET polyethylene terephthalate
  • polyimide polyimide
  • the thermal process by the irradiation of the laser beam L is not used, a penetration pattern having substantially the same cross-sectional shape and shape as the beam of the laser beam L can be processed. It is also possible to form the vapor deposition mask 14 having the opening pattern 6. Therefore, it is possible to form a thin film pattern with higher definition than before.
  • FIG. 9 is a front view showing a configuration example of the laser processing apparatus used in the fifth step.
  • This laser processing apparatus irradiates the mask member 11 on the TFT substrate 1 with the laser light L while conveying the TFT substrate 1 at a constant speed in the direction indicated by the arrow X in FIG.
  • This is for forming the vapor deposition mask 14 by providing the opening pattern 6 having substantially the same shape and dimensions as the patterns of the organic EL layers 3R to 3B.
  • the transfer means 15 mounts the TFT substrate 1 and the magnetic chuck stage 13 integrated on a transfer stage 20 having a plurality of air ejection holes and air suction holes formed on the upper surface thereof. And the edge parallel to the arrow X direction of the magnetic chuck stage 13 is held by a transport mechanism (not shown) while the TFT substrate 1 and the magnetic chuck stage 13 are floated on the transport stage 20 by a certain amount. And transport it.
  • a laser optical unit 16 is provided above the conveying means 15.
  • the laser optical unit 16 irradiates selected laser electrodes L on the TFT substrate 1 with ultraviolet laser light L.
  • an excimer laser 21 that emits laser light L of KrF 248 nm, and laser light
  • a coupling optical unit 22 for enlarging the L beam diameter and making the intensity distribution uniform to irradiate parallel light onto a photomask 23 (described later) and an upper surface of the transfer stage 20 are disposed opposite to the transfer stage 20.
  • a photomask 23 having a plurality of openings 24 (see FIG. 10) formed in a direction crossing the arrow X direction in a plane parallel to the upper surface is provided.
  • the photomask 23 will be described in detail.
  • the photomask 23 is formed on a light shielding film 26 such as chromium (Cr) provided on one surface of a transparent substrate 25 with the TFT substrate 1.
  • the openings 24 are formed in a row at an arrangement pitch 3P that is three times the arrangement pitch P of the anode electrodes 2R to 2B in the direction crossing the arrow X direction, and the center and the central axis of each opening 24 are matched on the other surface.
  • a plurality of microlenses 27 are formed, and the opening 24 is reduced and projected onto the TFT substrate 1 by the microlens 27.
  • the size of the opening 24 is M times the pattern size of the organic EL layers 3R to 3B, where M is the reduction magnification of the microlens 27.
  • region which attached the oblique line is an area
  • an elongated viewing window 28 having a longitudinal central axis intersecting the arrow X direction is formed at a position away from the center of the plurality of openings 24 by a certain distance in the direction opposite to the arrow X.
  • This viewing window 28 is for enabling the surface of the TFT substrate 1 passing under the photomask 23 to be photographed by the imaging means 17 described later from above the photomask 23.
  • the imaging means 17 is provided above the conveying means 15.
  • This imaging means 17 is for photographing the surface of the TFT substrate 1 through the viewing window 28 of the photomask 23 and is a line camera having a plurality of light receiving elements arranged in a straight line in a direction crossing the arrow X direction.
  • the central axis in the direction in which the plurality of light receiving elements are arranged is arranged to coincide with the longitudinal central axis of the viewing window 28 of the photomask 23.
  • illumination means (not shown) is provided so that the imaging region of the imaging means 17 can be illuminated from above the TFT substrate 1.
  • reference numeral 30 denotes a reflection mirror that bends the optical path of the imaging system.
  • Alignment means 18 is provided so that the photomask 23 can be moved in a direction crossing the arrow X in a plane parallel to the upper surface of the transfer stage 20.
  • the alignment means 18 aligns the photomask 23 with respect to the moving TFT substrate 1, and a direction in which the photomask 23 intersects the arrow X by a transport mechanism including an electromagnetic actuator, a motor, and the like. It can be moved to.
  • a control means 19 is provided in electrical connection with the transport means 15, the excimer laser 21, the imaging means 17, and the alignment means 18.
  • the control unit 19 controls the transport unit 15 to transport the TFT substrate 1 at a constant speed in the direction of the arrow X, and controls the excimer laser 21 to emit light at regular intervals, and processes an image input from the imaging unit 17. Then, a reference position preset on the TFT substrate 1 is detected, and a horizontal distance between the reference position and the alignment mark 29 of the photomask 23 is calculated, and the horizontal distance becomes a predetermined distance.
  • the alignment means 18 is controlled to move the photomask 23.
  • the fifth step is executed as follows. First, the TFT substrate 1 integrated with the magnetic chuck stage 13 is positioned and placed on the upper surface of the transfer stage 20 of the transfer means 15 so that the long axis of the opening 9 of the metal member 10 is parallel to the arrow X direction. To do. Next, the transport unit 15 is controlled by the control unit 19 in a state where the magnetic chuck stage 13 and the TFT substrate 1 are integrally floated on the transport stage 20 and transported at a constant speed in the arrow X direction. Start.
  • the TFT substrate 1 is transported, reaches the lower side of the photomask 23, passes through the viewing window 28 of the photomask 23, and intersects with the arrow X direction previously formed on the TFT substrate 1 by the imaging means 17, for example, the anode electrodes 2R to 2B or
  • the moving distance of the TFT substrate 1 is calculated by the control means 19 based on the position of the TFT substrate 1 when the anode electrodes 2R to 2B are detected. The Then, when the movement distance matches a preset target value of the movement distance stored and the anode electrode 2R corresponding to R of the TFT substrate 1 reaches just below the opening 24 of the photomask 23, the control means 19 controls the movement distance.
  • the excimer laser 21 emits pulses.
  • the edge of the gate line serving as a reference for the pre-selected alignment among a plurality of gate lines, for example, parallel to the direction of the arrow X formed in advance on the TFT substrate 1 is imaged.
  • the horizontal distance between the photomask 23 and the alignment mark 29 of the photomask 23 detected at the same time is calculated by the control means 19, and the alignment means 18 is set so that the distance matches a preset target value stored.
  • the photomask 23 can be made to follow and align with the TFT substrate 1 which moves while swinging in the direction intersecting the arrow X.
  • the excimer laser 21 emits light, and the irradiation region of the photomask 23 is irradiated with the laser light L. Further, the laser light L that has passed through the opening 24 of the photomask 23 is condensed on the anode electrode 2 ⁇ / b> R corresponding to R of the TFT substrate 1 by the microlens 27. Then, the film 4 on the anode electrode 2R is ablated and removed by the laser light L, and an opening pattern 6 is formed.
  • the excimer laser 21 emits light
  • the film 4 on the anode electrode 2R is removed by the laser light L
  • the anode electrode 2R A vapor deposition mask 14 having an opening pattern 6 provided thereon is formed.
  • the excimer laser 21 emits light continuously, and a shutter is provided on the output optical axis side of the laser light L so that the shutter is opened when the R-compatible anode electrode 2R reaches just below the opening 24 of the photomask 23. Good.
  • the photomask 23 is provided with a plurality of openings 24 arranged in a line.
  • the plurality of openings 24 is an integer multiple of the pixel pitch in the same direction in the arrow X direction.
  • a plurality of rows may be provided at the pitch.
  • the film 4 on the anode electrode 2R corresponding to R is removed by multiple laser irradiations.
  • the microlenses 27 are provided corresponding to the plurality of openings 24 .
  • a cylindrical lens having a long axis across the plurality of openings 24 may be used.
  • the opening 24 may be formed as one stripe-like opening connecting the plurality of openings 24.
  • a laser beam L having an elongated light beam cross section can be generated to form a stripe-shaped opening pattern 6 in the film 4.
  • the TFT substrate 1 is placed and transported on the transport stage 20 so that the long axis of the opening 9 of the mask member 11 intersects the arrow X.
  • the strip-shaped opening pattern 6 is irradiated with the plurality of R-compatible anodes by irradiating the elongated laser beam L. It can be formed across the electrode 2R. As a result, a striped R organic EL layer 3R (thin film pattern) can be formed on a plurality of R-compatible anode electrodes 2R.
  • the laser processing apparatus has been described with respect to the case where the aperture pattern 6 is formed on the film 4 by irradiating the laser beam L while moving the TFT substrate 1 at a constant speed.
  • the processing apparatus opens the film 4 by irradiating the laser beam L while moving the TFT substrate 1 stepwise in the direction of arrow X or moving the TFT substrate 1 stepwise in a plane parallel to the substrate surface.
  • the pattern 6 may be formed, or the film 4 is opened by irradiating laser light L through a photomask 23 provided with a plurality of microlenses 27 corresponding to a plurality of anode electrodes of the TFT substrate 1.
  • the pattern 6 may be formed collectively.
  • the formation of the opening pattern 6 by the laser beam L is processed at once by irradiating the laser beam L having a relatively high energy density of, for example, 1 to 20 J / cm 2 at a constant depth, as described above.
  • the portion may be processed slowly by irradiating the laser beam L with the energy intensity lowered to 0.1 J / cm 2 or less, preferably 0.06 J / cm 2 or less.
  • the formation time of the opening pattern 6 can be shortened, and at the same time, the anode electrode can be prevented from being damaged by the laser light L.
  • an R organic EL layer is formed on the R corresponding anode electrode 2R of the TFT substrate 1 via the opening pattern 6 of the vapor deposition mask 14 using a vacuum vapor deposition apparatus.
  • 3R is vapor-deposited, and a transparent electrode layer 31 made of an ITO film is vapor-deposited on the R organic EL layer 3R using a known vapor deposition technique such as vapor deposition or sputtering.
  • the edge of the vapor deposition mask 14 is lifted upward as indicated by the arrow + Z in the figure. Then, the film 4 of the vapor deposition mask 14 is mechanically peeled from the surface of the TFT substrate 1. As a result, the R organic EL layer 3R remains on the R corresponding anode electrode 2R, and the R organic EL layer forming step is completed.
  • FIG. 6 is a cross-sectional explanatory view showing the G organic EL layer forming step.
  • the G organic EL layer forming step includes a magnetic material, and is a resin film 4 that transmits visible light to the metal member 10 in which the opening 9 having a larger shape than the pattern of the G organic EL layer 3G is formed.
  • a step of placing the metal member 10 on the TFT substrate 1 so that the anode electrode 2G corresponding to G on 1 is positioned in the opening 9 of the metal member 10 FIG. 5B
  • FIG. 7 is a cross-sectional explanatory view showing the B organic EL layer forming step.
  • This B organic EL layer forming step includes a magnetic material, and is a resin film 4 that transmits visible light to the metal member 10 in which the opening 9 having a larger size than the pattern of the B organic EL layer 3B is formed.
  • a step of placing the metal member 10 on the TFT substrate 1 so that the anode electrode 2B corresponding to B on 1 is positioned in the opening 9 of the metal member 10 FIG. 7
  • FIG. 8 is a cross-sectional explanatory view showing the cathode electrode forming step.
  • This cathode electrode forming step is for electrically connecting the transparent electrode layers on the organic EL layers 3R, 3G, 3B formed on the anode electrodes 2R, 2G, 2B of the TFT substrate 1,
  • a cathode electrode 32 transparent electrode
  • ITO IndiumInTin Oxide
  • FIG. 11 is a cross-sectional explanatory view showing a modification of the method for manufacturing a vapor deposition mask used in the organic EL layer forming step.
  • the manufacturing method of the vapor deposition mask for R organic EL layers is demonstrated as an example.
  • laser light L such as a fluorine resin or a cover glass that transmits visible light so as to cover the upper surface of the TFT substrate 1 placed on the magnetic chuck stage 13 is used.
  • a transparent member 36 that is difficult to absorb is placed.
  • the film 4 of the mask member 11 is attached.
  • the transparent member 36 is closely attached. In this state, the metal member 10 is attracted by the static magnetic field of the magnetic chuck stage 13 and the film 4 and the transparent member 36 are sandwiched between the metal member 10 and the TFT substrate 1 as shown in FIG. .
  • the film 4 corresponding to the anode electrode 2R corresponding to R on the TFT substrate 1 is irradiated with the laser light L, and the film 4 of the portion is irradiated with the R organic EL layer 3R.
  • An evaporation mask 14 is formed by providing an opening pattern 6 having the same shape and dimensions as the pattern. At this time, since the transparent member 36 does not absorb the laser light L, it is not laser processed.
  • an electrostatic chuck stage 37 configured to be able to apply a constant voltage, for example, is placed on the vapor deposition mask 14, and the film of the vapor deposition mask 14 is placed on the electrostatic chuck stage 37. 4 is electrostatically attracted and the static magnetic field of the magnetic chuck stage 13 is turned off. Then, with the vapor deposition mask 14 adsorbed to the electrostatic chuck stage 37, the electrostatic chuck stage 37 is lifted perpendicular to the arrow + Z direction shown in the figure, and the transparent member 36 is pulled out in the arrow Y direction shown in the figure.
  • the electrostatic chuck stage 37 is again lowered vertically in the direction of the arrow ⁇ Z, and the deposition mask 14 is placed on the TFT substrate 1. Then, the electrostatic chuck stage 37 is turned off and the magnetic chuck stage 13 is turned on, and the metal member 10 of the vapor deposition mask 14 is attracted by a magnetic force as shown in FIG. After the contact, the electrostatic chuck stage 37 is removed. Thereby, the manufacturing method of the vapor deposition mask 14 is complete
  • the formation of the R organic EL layer 3R is performed in the same manner as in FIGS. 4F and 4G using the vapor deposition mask 14. Furthermore, the G organic EL layer 3G and the B organic EL layer 3B can be formed using a mask formed in the same manner.
  • the transparent member 36 that transmits visible light is interposed between the film 4 and the TFT substrate 1, the laser light L is irradiated, and the film 4 is ablated to form the opening pattern 6.
  • the residue of the film 4 is generated by ablation, the residue is completely blocked by the transparent member 36 and does not adhere to the anode electrodes 2R to 2B. Therefore, the contact resistance between the anode electrodes 2R to 2B and the organic EL layers 3R to 3B is increased, or the residue damages the organic EL layers 3R to 3B, so that the light emission characteristics of the organic EL layers 3R to 3B are improved. There is no risk of lowering.
  • the transparent member 36 is a member that hardly absorbs the laser light L.
  • the present invention is not limited to this, and the transparent member 36 is sufficiently thick with respect to the thickness of the film 4. As long as it is thick, it may be a member that easily absorbs the laser beam L such as polyimide. In this case, after the laser processing on the film 4 is completed, the irradiation of the laser beam L may be stopped when the laser processing of the transparent member 36 is not completed.
  • the transparent electrode layer 31 is further formed on the organic EL layers 3R to 3B when the organic EL layers 3R to 3B are formed has been described.
  • the transparent electrode layer 31 may not be formed when the organic EL layers 3R to 3B are formed.
  • the static magnetic field generating means 12 is a permanent magnet.
  • the present invention is not limited to this, and the static magnetic field generating means 12 is an electromagnet. Also good.
  • the metal member 10 is made of a magnetic material.
  • the present invention is not limited to this, and the metal member 10 is made of a nonmagnetic material. May be.
  • an electrostatic chuck stage configured to be able to apply a constant voltage is used. After the TFT substrate 1 is placed on the electrostatic chuck stage, a voltage is applied to the stage to electrostatically attract the metal member 10 onto the TFT substrate 1 and sandwich the film 4.
  • the film 4 is attached to the metal member 10. May be applied by thermocompression bonding.
  • the opening 9 of the metal member 10 can be filled with the film 4.
  • the film 4 may be used by being sandwiched between the TFT substrate 1 and the metal member 10 without being bonded to the metal member 10.
  • FIG. 12 is a process diagram showing another manufacturing method of the second embodiment of the vapor deposition mask according to the present invention.
  • the vapor deposition mask manufacturing method includes a first step of forming the metal member 10, a second step of closely holding the resin film 4 on the metal member 10, a third step of closely contacting the film 4 on the substrate 38, A fourth step of forming a plurality of opening patterns 6 in the film 4 and a fifth step of peeling the metal member 10 and the film 4 integrally from the substrate 38 are performed, and the results are shown in FIG. 13 or FIG. A vapor deposition mask is manufactured.
  • the specific configuration of the second embodiment of the vapor deposition mask according to the present invention is to form an opening pattern 6 having the same shape and dimension as the thin film pattern corresponding to a predetermined thin film pattern formation region on the substrate.
  • a metal member 10 having an opening 9.
  • the vapor deposition mask 14 shown in FIG. 13 is provided with a plurality of elongated opening patterns 6, and the vapor deposition mask 14 shown in FIG. 14 is separated by a plurality of bridges 39 and arranged in a row. Are selected according to the shape of the thin film pattern to be formed. 13 and 14, reference numeral 40 denotes a mask side alignment mark for alignment with a substrate side alignment mark provided in advance on the substrate.
  • a plurality of openings 9 having a shape larger than that of the thin film pattern are provided in a thin plate-shaped magnetic material corresponding to the formation region of the thin film pattern. This is a step of forming the metal member 10.
  • the metal member 10 is formed into a thin plate of magnetic material made of, for example, nickel, nickel alloy, invar, or invar alloy having a thickness of about 1 ⁇ m to several mm, preferably about 30 ⁇ m to 50 ⁇ m.
  • the opening 9 is formed by dry etching such as wet etching or ion milling using a resist mask or by laser processing.
  • the opening 9 only needs to have a larger shape than the opening pattern 6 formed in the film 4 in the fourth step described later, and therefore the opening 9 is not required to be as precise as the opening pattern 6.
  • the shape of the opening part 9 is good to become narrow gradually toward the film 4 side (a longitudinal cross-sectional shape is an inverted trapezoid shape). As a result, the deposition material at the edge of the opening 9 is not squeezed during deposition, and the film thickness of the thin film pattern can be formed uniformly.
  • the second step is a step of forming a mask member by closely holding a resin film 4 that transmits visible light on one surface of the metal member 10, as shown in FIG. 12 (b).
  • the metal member 10 is thermocompression bonded to the film 4.
  • thermoplastic film 4 that transmits visible light adhered on a substrate 41 such as flat glass or the like, or a surface that is fusible.
  • the step of placing the metal member 10 on the upper surface of the processed film 4 and the metal member 10 are thermocompression bonded to the film 4 under a constant temperature and pressure as shown in FIG. And a step of peeling the film 4 from the surface of the substrate 41 as shown in FIG. In this case, since the twist and bending of the metal member 10 are regulated by the film 4, the shape and position of the opening 9 of the metal member 10 are maintained.
  • This second step may be performed in a state where a constant tension is applied to the metal member 10 by grasping the four sides of the metal member 10 and pulling them outward.
  • the magnetic member 10 made of a magnetic material may be attracted to the flat surface of a magnetic chuck having a flat surface by a magnetic force, or a combination of both may be performed.
  • the magnetic chuck may include a permanent magnet, but preferably includes an electromagnet that can control on / off of the generation of a magnetic field.
  • another magnetic chuck is placed on the metal member 10, and the metal member 10 is placed on the flat suction surface of the magnetic chuck by a magnetic force. It is good to carry out in the state which adsorbed and held. Thereby, the shape and position of the opening 9 of the metal member 10 can be maintained with high accuracy.
  • the film material used here may be a resin film that is ablated by irradiation with ultraviolet laser light L, and preferably, for example, polyimide, polyethylene terephthalate (PET), or the like.
  • the linear expansion coefficient of polyimide is about 10 ⁇ 10 ⁇ 6 to about 40 ⁇ 10 ⁇ 6 / ° C.
  • the linear expansion coefficient of metal such as nickel (about 6 ⁇ 10 ⁇ 6 to about 20 ⁇ 10 ⁇ 6 / (° C.) and within an allowable range, when used in combination with the metal member 10 made of a metal material, it is possible to suppress the occurrence of warpage in vapor deposition due to the difference in thermal expansion coefficient between the two members during vapor deposition. desirable.
  • the metal such as Invar has a very small coefficient of thermal expansion (about 2 ⁇ 10 ⁇ 6 / ° C. or less)
  • the thermal expansion of the deposition mask due to radiant heat during deposition is regulated to maintain the positional accuracy of the opening pattern 6. Can do.
  • the thin film pattern formation region on the substrate 38 placed on the first magnetic chuck 42 is positioned in the opening 9 of the metal member 10. While observing with a microscope a mask-side alignment mark 40 (see FIGS. 13 and 14) formed in advance on the metal member 10 and a substrate-side alignment mark (not shown) formed in advance on the substrate 38, both marks are at a fixed position. After the metal member 10 is aligned with the substrate 38 by adjusting the relationship, the metal member 10 is attracted by the magnetic force of the first magnetic chuck 42 and the film 4 is placed on the upper surface of the substrate 38. Adhere closely.
  • substrate 38 is a board
  • the reference pattern 43 used as the irradiation target of the laser beam L in the 3rd step mentioned later corresponds to a thin film pattern formation area.
  • a reference substrate provided.
  • the thin film pattern may be formed on the substrate 38 by vapor deposition through the opening pattern 6 following the formation of the opening pattern 6 in the fourth step described later. Thereby, a high-definition thin film pattern can also be formed with high positional accuracy.
  • the wavelength of the film 4 corresponding to the thin film pattern formation region (reference pattern 43) in the opening 9 of the metal member 10 is 400 nm or less.
  • energy density is irradiated with a laser beam L of 0.1J / cm 2 ⁇ 20J / cm 2, a thin film pattern and geometry to form an opening pattern 6 to the same through.
  • the second magnetic chuck 44 having a flat attracting surface is placed on the upper surface of the metal member 10, and the electromagnet of the second magnetic chuck 44 is installed.
  • the electromagnet of the first magnetic chuck 42 is turned off, the metal member 10 is attracted by the magnetic force of the second magnetic chuck 44, and the metal member 10 and the film 4 are integrally peeled off from the substrate 38. 2 is received on the magnetic chuck 44 side.
  • the manufacturing process of the vapor deposition mask of this invention is complete
  • the vapor deposition mask 14 is handled while the metal member 10 is attracted to the second magnetic chuck 44, the shape and position of the opening pattern 6 of the vapor deposition mask 14 are maintained, and the subsequent high-definition thin film pattern is formed. Formation can be performed easily.
  • the metal member 10 and the film 4 may be integrated by thermocompression bonding of the metal member 10 after the surface of the film 4 is modified.
  • the surface modification treatment includes a method of etching the surface of the film 4 to form hydrophilic groups such as carboxyl groups (—COOH) and carbonyl groups (—COO) on the surface.
  • hydrophilic groups such as carboxyl groups (—COOH) and carbonyl groups (—COO) on the surface.
  • a silane coupling agent or the like is applied to the interface between the film 4 and the metal member 10 to form a silanol (SiOH) group to improve wettability, and the film 4 and the metal member 10 are formed at the interface.
  • Hydrogen bonds may be further subjected to dehydration condensation. Thereby, adhesion by a more stable chemical bond becomes possible.
  • the surface of the film 4 can be modified by performing plasma treatment on the surface of the film 4 in atmospheric pressure plasma or reduced pressure plasma, or wet etching the surface of the film 4 with an alkaline solution.
  • FIG. 16 is an explanatory view showing still another example of forming the mask member.
  • a step of placing the metal member 10 on the upper surface of the film 4 adhered on the substrate 41 such as flat glass is shown in FIG.
  • the step of applying the curable resin 45 that transmits visible light into the opening 9 of the metal member 10 and curing it to integrate the metal member 10 and the film 4 as shown in FIG. it includes a step of adsorbing the metal member 10 to a flat adsorption surface of a magnetic chuck (not shown) and peeling the film 4 from the surface of the substrate 41.
  • the curable resin 45 used here is preferably, for example, a UV-free or photo-curable solventless or resin with very little solvent.
  • FIG. 17 is an explanatory view showing still another example of forming the mask member.
  • copper is deposited on one surface of a film 4 electrostatically adsorbed on an electrostatic chuck (not shown) having a flat surface by a known deposition technique such as sputtering or plating.
  • FIG. 18 is an explanatory view showing still another example of forming the mask member.
  • a resin solution 48 such as polyimide is spin-coated or dip-coated to a thickness of about 30 ⁇ m, for example, on a substrate 41 having a flat surface such as glass.
  • the step of forming the film 4 held on the metal member 10 and, as shown in FIG. 5C, for example, the metal member 10 is attracted to a flat attracting surface of a magnetic chuck (not shown) to attach the film 4 to the substrate 41. Peeling from the surface.
  • the semi-dry state of the resin solution 48 can be realized by appropriately controlling the heating temperature and the heating time, and the heating conditions are determined in advance by experiments. Furthermore, the conditions for completely drying the resin are similarly determined in advance.
  • FIG. 19 is an explanatory view showing still another example of forming the mask member.
  • a photosensitive resin solution 48 such as photoresist or photosensitive polyimide is spin-coated or dip-coated to a thickness of about 30 ⁇ m on a substrate 41 such as glass.
  • a photomask as shown in FIG. 5B
  • developing to form a protruding pattern 49 at a position corresponding to the opening 9 of the metal member 10 After the metal member 10 is pressure-bonded on the photosensitive resin in a state where the opening 9 of the metal member 10 and the protruding pattern 49 are matched, heating is performed at a predetermined temperature.
  • the step of forming the film 4 which is dried and held on the metal member 10 and the film 4 is formed by adsorbing the metal member 10 on a flat adsorption surface of a magnetic chuck (not shown), for example, as shown in FIG. Table of material 41 And it includes a step of peeling, from.
  • the protruding pattern 49 is formed in a trapezoidal shape having a narrow upper portion and a lower lower portion, the fitting of the opening 9 of the metal member 10 and the protruding pattern 49 is performed using the side surface of the protruding pattern 49 as a guide. It can be done easily.
  • the positioning of the opening 9 of the metal member 10 is regulated by the protruding pattern 49, the positional accuracy of the opening 9 of the metal member 10 can be made higher than in the case of FIG.
  • FIG. 20 is an explanatory view showing still another example of forming the mask member.
  • a step of adsorbing the metal member 10 to a flat adsorption surface of a magnetic chuck (not shown) and peeling the film 4 from the surface of the base material 41 is included.
  • the metal member 10 is placed on the attraction surface of another magnetic chuck whose attraction surface is formed flat by glass or the like. It may be performed in a state in which the metal member 10 is attracted and held by the magnetic force. Thereby, the shape and position of the opening 9 of the metal member 10 can be maintained with high accuracy.
  • FIG. 21 is an explanatory view showing still another example of forming the mask member.
  • a photosensitive resin solution 48 such as a photoresist or photosensitive polyimide is applied to the upper surface of a flat metal substrate 50 made of, for example, stainless steel.
  • the metal member 10 is attracted to a flat attracting surface of a magnetic chuck (not shown), and the metal member 10 and the island pattern 51 (film 4) are formed. Are integrally peeled off from the surface of the metal substrate 50.
  • the metal member 10 is produced by plating a magnetic film around the resin island pattern 51 (film 4) formed by using the photolithography technique, the opening 9 of the metal member 10 is formed. Can be formed with high accuracy.
  • FIG. 22A is a process diagrams showing still another manufacturing method of the vapor deposition mask (second embodiment) according to the present invention.
  • a polyimide film 4 having a thickness of about 10 ⁇ m to 30 ⁇ m for transmitting visible light, for example, electrostatically adsorbed and held on a stage (not shown) having a flat surface.
  • a base layer 52 of a metal film made of a magnetic material made of nickel or the like having a thickness of about 50 nm is deposited on the surface 4a by a known vapor deposition technique such as sputtering as shown in FIG.
  • the underlayer 52 is not limited to a metal film made of a magnetic material, and may be a metal film made of a highly conductive nonmagnetic material.
  • a resist 53 (photosensitive material) having a thickness of about 30 ⁇ m is spin-coated on the base layer 52, for example.
  • FIG. 22 (d) exposure is performed using a photomask 54, development is performed as shown in FIG. 22 (e), and a thin film pattern formation region (eg, organic) on a substrate (eg, TFT substrate) is developed.
  • a thin film pattern formation region eg, organic
  • An island pattern 51 of a resist 53 having a shape larger than that of the thin film pattern is formed in a portion corresponding to the EL layer formation region.
  • the photomask 54 to be used has an opening formed in a portion corresponding to the thin film pattern formation region on the substrate, and when the resist 53 is a positive type, the photomask 54 shields light from the portion corresponding to the thin film pattern formation region on the substrate.
  • a metal member 10 made of a magnetic material such as nickel or invar is plated to a thickness of about 30 ⁇ m in the peripheral region of the island pattern 51 of the film 4.
  • FIG. 22 (g) after the island pattern 51 is peeled off and the opening 9 corresponding to the island pattern 51 is formed in the metal member 10, as shown in FIG. 9 is removed by etching, and the mask member 11 is formed. Note that a mask-side alignment mark 40 for alignment with the substrate is formed by the metal member 10 at a predetermined position of the mask member 11.
  • the mask member 11 formed in this way is attracted and held on the metal member 10 side by the second magnetic chuck 44 having the attracting surface 44a formed on a flat surface as shown in FIG.
  • the mask member 11 is placed above the substrate 1 (for example, a TFT substrate) placed on the first magnetic chuck 42 having the attracting surface 42a formed on a flat surface. Positioning and observing with a microscope a substrate-side alignment mark (not shown) formed in advance on the substrate 1 and a mask-side alignment mark 40 formed in advance on the mask member 11 so that both marks have a certain positional relationship. After the adjustment, the substrate 1 and the mask member 11 are aligned so that the thin film pattern formation region 55 (for example, the region on the anode electrode) is positioned in the opening 9 as shown in FIG. The film 4 is brought into close contact with the substrate 1. Thereafter, as shown in FIG.
  • the electromagnet 56 of the first magnetic chuck 42 is turned on and the electromagnet 56 of the second magnetic chuck 44 is turned off, and the metal member 10 is attracted by the first magnetic chuck 42. Then, the mask member 11 is transferred from the second magnetic chuck 44 onto the substrate 1.
  • plasma processing is performed in a known plasma processing apparatus, and a thin layer at the bottom of the concave portion 5 is removed to form an opening pattern 6 penetrating therethrough. Thereby, the vapor deposition mask 14 is manufactured.
  • a second magnetic chuck 44 is placed on the vapor deposition mask 14. Then, as shown in FIG. 24C, the electromagnet 56 of the second magnetic chuck 44 is turned on and the electromagnet 56 of the first magnetic chuck 42 is turned off, and the metal member 10 is attracted by the second magnetic chuck 44. Then, the vapor deposition mask 14 is transferred to the second magnetic chuck 44. Thereafter, the vapor deposition mask 14 is stored while being held by the second magnetic chuck 44.
  • the substrate 1 is integrated with the vapor deposition mask 14 when the vapor deposition mask 14 is formed in FIG.
  • the thin film pattern may be formed by placing the first magnetic chuck 42 in a vacuum chamber of a vacuum deposition apparatus and vacuum depositing the deposition material through the opening pattern 6 of the deposition mask 14.
  • FIGS. 25 (a) and 25 (b) from a thin plate-like magnetic material provided with a plurality of through-holes 9 having a shape larger than that of the thin film pattern corresponding to the formation region of the thin film pattern.
  • a case in which an elongated opening pattern 6 as shown in FIG. 13 is formed on a mask member 11 in which a metal member 10 to be formed is formed in close contact with one surface of a resin film 4 that transmits visible light will be described. .
  • a plurality of reference patterns 43 which are the same as the thin film pattern and have the same dimensions as the thin film pattern, are formed on one surface 57a of the transparent substrate 57.
  • the reference pattern 43 of the reference substrate 38 placed on the stage of the laser processing apparatus with the reference pattern 43 on the lower side is formed at the opening 9 of the metal member 10. After the metal member 10 is aligned with the reference substrate 38 so as to be positioned inside, the film 4 is brought into close contact with the other surface 57 b of the reference substrate 38.
  • a cross-shaped substrate-side alignment mark 58 is formed at the position corresponding to the mask-side alignment mark 40 outside the formation region of the plurality of reference patterns 43 together with the reference pattern 43. ) Or the like.
  • the alignment of the metal member 10 and the reference substrate 38 is performed by observing the mask-side alignment mark 40 formed in advance on the metal member 10 and the substrate-side alignment mark 58 formed in advance on the reference substrate 38 with a microscope. The adjustment is performed so that the center of the substrate side alignment mark 58 matches the center of the mask side alignment mark 40.
  • the film 4 and the reference substrate 38 are brought into close contact with each other by attracting the metal member 10 by the magnetic force of the magnet chuck provided on the back surface of the stage, and at the same time, the metal member 10, the film 4 and the reference substrate 38 are integrated with the stage. Fixed to.
  • a laser beam L having an energy density of 0.1 J / cm 2 to 20 J / cm 2 is irradiated to form an opening pattern 6 having the same shape as the thin film pattern.
  • the mask member 11 and the reference substrate 38 are conveyed in the alignment direction of the reference patterns 43 of the reference substrate 38 (in the direction of the arrow in FIG. 25D), while the mask is applied to the irradiation position of the laser light L.
  • the reference pattern 43 is photographed by transmitted illumination by the imaging means 17 provided so as to be capable of photographing the upstream position of the member 11 and the reference substrate 38 in the transport direction, and the reference pattern 43 is detected based on the photographed image. This is executed by controlling the irradiation timing of the laser light L with reference to the time. Thereby, a vapor deposition mask as shown in FIG. 13 is completed.
  • the imaging means 17 is a line camera in which a plurality of light receiving elements are arranged in a straight line in a direction intersecting with the conveying direction of the mask member 11 and the reference substrate 38, and the reference pattern 43 is an image taken by the imaging means 17. Based on this, it is possible to detect from a change in luminance in the transport direction (for example, a change in luminance from light to dark in the case of transmitted illumination).
  • the amount of positional deviation between the center of the opening 9 of the metal member 10 and the center of the reference pattern 43 of the reference substrate 38 is within an allowable value. It is executed with confirmation. More specifically, a change in luminance that exceeds the threshold value as shown in FIG. 27 in the moving direction of the mask member 11 and the reference substrate 38 is detected based on the image taken by the imaging means 17, and the brightness changes from dark to bright. The distance D1 between the two is calculated from the position of the luminance change to the distance, and the distance D2 between the two is calculated from the position of the luminance change from light to dark adjacent to each other, and
  • a magnetic chuck (holding means) (not shown) having a flat attracting surface is placed on the upper surface of the metal member 10, and the electromagnet of the magnetic chuck is turned on. Then, the metal member 10 is attracted by the magnetic force of the magnetic chuck, and the vapor deposition mask is peeled off from the reference substrate 38 and received by the magnetic chuck side. Thereby, all the manufacturing processes of the vapor deposition mask of this invention are complete
  • the one surface side of the sheet coated with an easily peelable adhesive may be adhered to the upper surface of the metal member 10, the metal member 10 may be attached to the sheet, and the vapor deposition mask may be peeled off from the reference substrate 38.
  • the handleability of a vapor deposition mask improves more.
  • the opening pattern 6 is formed on the film 4 by irradiating the laser beam L while conveying the mask member 11 and the reference substrate 38 has been described, but the present invention is not limited to this.
  • the opening pattern 6 may be formed while stepping the laser light L side in the arrangement direction of the reference pattern 43 of the reference substrate 38.
  • the mask member 11 and the reference substrate 38 are integrally conveyed.
  • step S1 the reference substrate 38 and the mask member 11 positioned and adhered to the surface of the reference substrate 38 opposite to the surface on which the reference pattern 43 is formed are placed with the reference pattern 43 side down. Then, it is placed on the stage integrally, and the edge of the mask member 11 and the reference substrate 38 is held by a conveyance mechanism (not shown), and conveyance is started at a constant speed in the arrow Z direction shown in FIG.
  • step S2 the imaging member 17 captures the mask member 11 and the reference substrate 38 from below, and the captured image is processed by the image processing unit of the control unit 19 to change the brightness from dark to bright in the arrow Z direction. Then, a luminance change from light to dark (see FIG. 27) is detected.
  • step S3 the number of driving pulses of the pulse motor of the transport mechanism from the detection of a change in luminance from dark to light until the detection of the next change in luminance from dark to light, and the luminance from light to dark.
  • the number of drive pulses of the pulse motor from when the change is detected until the next brightness change from light to dark is detected is counted by the calculation unit of the control means 19, and from each count number to the dark to light adjacent to each other.
  • the interval D1 between the luminance change portions and the interval D2 between the brightness change portions adjacent to each other from light to dark are calculated.
  • is calculated to calculate the amount of positional deviation between the center of the opening 9 of the metal member 10 and the center of the reference pattern 43.
  • step S4 the calculation unit compares the displacement amount with an allowable value read from the memory, and determines whether the displacement amount is within an allowable range. Here, if it becomes "YES” determination, it will progress to step S5. On the other hand, if “NO” determination is made, it is determined that the alignment error between the metal member 10 and the reference substrate 38 or the formation accuracy of the opening 9 of the metal member 10 is poor, and the laser processing is terminated. Then, the transport mechanism is moved at a high speed to carry out the mask member 11 and the reference substrate 38.
  • step S5 the leading edge of the reference pattern 43 in the conveyance direction is detected based on the detection of the odd-numbered luminance change in the luminance change from light to dark in the image processing unit.
  • step S6 when the reference pattern 43 is detected in step S5, the number of driving pulses of the pulse motor of the transport mechanism is counted by the arithmetic unit based on the detection time. Then, compared with the target value of the pulse count number read from the memory, whether or not the pulse count number matches the target value, that is, the reference substrate 38 is moved by a predetermined distance integrally with the mask member 11. It is determined whether or not. Here, if it becomes "YES" determination, it will progress to step S7.
  • the pulse count number matches the target value when the reference pattern 43 of the reference substrate 38 has just reached the irradiation position of the laser light L of the laser optical unit 16.
  • step S7 an oscillation command is output from the control means 19 to the excimer laser 21, and the excimer laser 21 pulsates.
  • the laser beam L is applied to the film 4 portion on the reference pattern 43 of the reference substrate 38, and the film 4 in the portion is ablated to penetrate the opening pattern 6 having the same shape and dimension as the reference pattern 43 (or thin film pattern). Is formed.
  • the opening pattern 6 may be formed by emitting a plurality of shots of laser light L from the excimer laser 21 within a predetermined time.
  • step S8 it is determined whether or not all the opening patterns 6 corresponding to the reference pattern 43 have been formed. If “NO” is determined here, the process returns to step S2, and steps S2 to S8 are repeatedly executed until all the opening patterns 6 are formed and step S8 is determined to be "YES".
  • the opening pattern 6 corresponding to the second and subsequent reference patterns 43 from the top in the transport direction of the reference substrate 38 may be formed as follows. That is, the number of driving pulses of the pulse motor is counted in the calculation unit, and the moving distance of the transport mechanism calculated based on the counted number is compared with the arrangement pitch of the reference pattern 43 read from the memory. Alternatively, the excimer laser 21 may be oscillated.
  • steps S3 to S6 are executed in series, but in actuality, steps S3 to S4 and steps S5 to S6 are executed in parallel.
  • the opening pattern 6 may be formed by etching instead of laser processing.
  • etching instead of laser processing.
  • the opening pattern 6 is formed by etching will be described.
  • the case where the opening pattern 6 is formed with respect to the member for masks formed, for example according to the process shown in FIG. 22 is demonstrated.
  • a positive photoresist 53 for example, is dip-coated on both surfaces of the mask member 11.
  • a photomask 54 having openings corresponding to the opening pattern 6 to be formed is placed on the side opposite to the first surface 4a where the metal member 10 of the film 4 is in close contact.
  • the second photomask 54 is masked by using an alignment mark (not shown) provided on the photomask 54 and a mask side alignment mark 40 provided on the metal member 10 in a state of being opposed to the second surface 4b.
  • the photo resist 53 applied to the second surface 4b of the film 4 is exposed and developed.
  • openings having the same shape and dimensions as the thin film pattern are arranged at the same arrangement pitch as the thin film pattern to be deposited on the portion of the photoresist 53 corresponding to the opening 9. 59 is formed, and a resist mask 60 is formed.
  • the mask member 11 is immersed in a tank filled with, for example, a polyimide etching solution, and the polyimide film 4 is etched using the resist mask 60. Then, as shown in FIG. 29D, an opening pattern 6 is formed.
  • the opening pattern 6 is formed with a taper having a taper angle of about 55 ° to 60 °. be able to.
  • the etching of the film 4 is performed from the second surface 4b side of the film 4, the opening pattern 6 is opened from the second surface 4b side to the first surface 4a side due to the effect of side etching. The area gradually decreases.
  • the area of the opening pattern 6 on the first surface 4a side is the same as the area of the thin film pattern to be formed.
  • the deposition mask 14 shown in FIG. 13 or FIG. 14 is completed by washing away the photoresist 53 applied on both surfaces of the mask member 11 with an organic solvent.
  • a dry film resist may be used instead of the photoresist 53.
  • the etching process of the film 4 shown in FIG. 29D is preferably performed in a state where the metal member 10 side of the mask member 11 is the magnetic chuck side and the metal member 10 is magnetically attracted to the magnetic chuck. .
  • the vapor deposition mask 14 manufactured in this way is used as follows during vapor deposition.
  • an organic EL layer is formed by vapor deposition as a thin film pattern
  • an R organic EL layer is formed
  • the vapor deposition mask 14 that is attracted and held by the second magnetic chuck 44 is positioned above the TFT substrate 1 placed on the first magnetic chuck 42.
  • the metal member 10 of the vapor deposition mask 14 is arranged on the TFT substrate 1 side.
  • the two marks are in a certain positional relationship, for example, each mark.
  • the deposition mask 14 and the TFT substrate 1 are aligned by relatively moving the first and second magnetic chucks 42 and 44 so that the centers coincide.
  • the second magnetic chuck 44 is lowered vertically with respect to the first magnetic chuck 42 in the direction of the arrow -Z shown in FIG.
  • the metal member 10 of the vapor deposition mask 14 is brought into close contact with the TFT substrate 1.
  • each opening pattern 6 of the vapor deposition mask 14 is positioned on the R corresponding anode electrode 2 ⁇ / b> R of the TFT substrate 1.
  • the first magnetic chuck 42 is turned on, the second magnetic chuck 44 is turned off, and the metal member 10 of the vapor deposition mask 14 is magnetically applied to the first magnetic chuck 42.
  • the vapor deposition mask 14 is transferred onto the TFT substrate 1. Thereafter, the second magnetic chuck 44 is lifted and removed in the arrow + Z direction shown in FIG.
  • the vapor deposition mask 14, the TFT substrate 1 and the second magnetic chuck 44 are integrally installed at a predetermined position in the vacuum chamber of the vapor deposition apparatus with the vapor deposition mask 14 facing down and facing the vapor deposition source. .
  • vacuum evaporation is performed under preset evaporation conditions to form an R organic EL layer 3 ⁇ / b> R on the R corresponding anode electrode 2 ⁇ / b> R of the TFT substrate 1.
  • the opening pattern 6 of the vapor deposition mask 14 is formed in a shape expanding from the first surface 4a side to the second surface 4b side of the film 4, and the vapor deposition mask 14 on the side on which the vapor deposition material molecules fly. Since there is no member that becomes a shadow of vapor deposition on this surface, the R organic EL layer 3R deposited on the TFT substrate 1 through the opening pattern 6 has a uniform film thickness.
  • the vapor deposition mask 14 according to the present invention has the following advantages compared to the conventional metal mask. That is, as shown in FIG. 32A, in the case of the conventional metal mask 61, the vapor deposition material goes around and adheres to the gap 63 between the metal mask 61 and the TFT substrate 1, and deposit 64 is deposited. To do. The deposit 64 lifts the edge of the opening pattern 6 of the metal mask 61 to wave the metal mask 61. For this reason, a fine thin film pattern (for example, the R organic EL layer 3R) can be accurately formed. There was something I could't do.
  • a fine thin film pattern (R organic EL layer 3R) can be formed with high accuracy.
  • the vapor deposition mask 14 is described in which the metal member 10 provided with the opening 9 having a larger dimension than the opening pattern 6 is in close contact with the one surface 4a of the film 4.
  • the vapor deposition mask of the present invention is described. 14 is not limited thereto, and a plurality of flaky metal members 10 may be provided by being dispersed on one surface 4a or inside of the film 4 at the outer portion of the opening pattern 6.
  • the metal member 10 is a thin piece will be described.
  • FIG. 33A and 33B are views showing a third embodiment of the vapor deposition mask 14 according to the present invention, wherein FIG. 33A is a plan view and FIG. 33B is a sectional view taken along the line DD of FIG.
  • a plurality of opening patterns 6 having the same shape and dimensions as the thin film pattern are formed by arranging them in parallel at the same arrangement pitch as the arrangement pitch of the striped thin film pattern to be formed on the substrate.
  • one surface 4a or the inside of the film 4 at the outer portion of the film 4 made of resin such as polyimide or polyethylene terephthalate (PET) having a thickness of, for example, about 10 ⁇ m to 30 ⁇ m and a plurality of opening patterns 6 of the film 4.
  • resin such as polyimide or polyethylene terephthalate (PET) having a thickness of, for example, about 10 ⁇ m to 30 ⁇ m and a plurality of opening patterns 6 of the film 4.
  • a flaky metal member 10 provided on the surface.
  • the thin piece is a magnetic material and the metal member 10 having a thickness of about 10 ⁇ m to 30 ⁇ m provided in close contact with the one surface 4a of the film 4 will be described.
  • the metal member 10 has a striped form in which the major axis coincides with the major axis at the outer portion parallel to the major axis of the opening pattern 6 of the film 4.
  • the difference in thermal expansion coefficient between the film 4 and the metal member 10 is shown in FIG.
  • the vapor deposition mask 14 may be warped, and the adhesion to the substrate may be deteriorated.
  • a plurality of flaky metal members 10 are provided scattered on one surface 4a of the film 4 at the outer portion of the plurality of opening patterns 6. It is a thing. Thereby, the difference of the thermal expansion coefficient between the film 4 and the metal member 10 is relieved, and the curvature of the vapor deposition mask 14 is suppressed.
  • a base layer 52 of a metal film made of a magnetic material made of nickel (Ni) or the like having a thickness of about 50 nm is deposited by a known film forming technique such as sputtering.
  • the underlayer 52 is not limited to a magnetic material, and may be a non-magnetic material with good electrical conductivity.
  • a resist 53 (photosensitive material) having a thickness of about 15 ⁇ m is spin-coated on the underlayer 52, for example.
  • the resist 53 is exposed using a photomask 54, developed as shown in FIG. 35 (e), and a plurality of layers reaching the underlayer 52 on the film surface of the resist 53.
  • the openings 59 are randomly arranged.
  • the photomask 54 shields light from portions corresponding to the plurality of openings 59.
  • the photomask 54 to be used is A portion corresponding to the plurality of openings 59 is opened.
  • a thin film of a metal member 10 such as nickel (Ni) is plated in the opening 59 to a thickness of about 15 ⁇ m.
  • FIG. 35 (g) after the resist 53 is peeled off, the underlying layer 52 around the metal member 10 is removed by etching as shown in FIG. 35 (h). Thereby, as shown in FIG. 36A, a mask member 11 in which a plurality of film-like metal members 10 are randomly scattered on one surface of the film 4 is formed.
  • the laser light L shown in FIG. 36B is irradiated to the portion of the film 4 corresponding to the reference pattern 43 of the reference substrate 38.
  • the opening pattern 6 is formed on the film 4.
  • the laser beam L is moved stepwise in the direction of the arrow relative to the mask member 11 by the same distance as the arrangement pitch of the reference patterns 43 in the same direction.
  • the film 4 is processed to form a plurality of opening patterns 6.
  • the vapor deposition mask 14 shown in FIG. 33 is completed.
  • the opening pattern 6 may be laser processed using the laser processing apparatus shown in FIG.
  • the mask member 11 is formed by randomly dispersing a plurality of flaky metal members 10 on one surface 4a of the film 4, vapor deposition with different arrangement pitches and shapes of the opening patterns 6 is performed.
  • the mask member 11 can be shared by the mask 14. Therefore, the manufacturing cost of the vapor deposition mask 14 can be reduced.
  • the present invention is not limited to this, and the plurality of metal members 10 are scattered. 37 may be provided in parallel with the long axis on the outer side of the striped opening pattern 6 of the film 4 parallel to the long axis. In this case, the plurality of metal members 10 may be arranged at a constant arrangement pitch. Thereby, the attraction
  • the mask member 11 to be formed is dedicated to a specific vapor deposition mask.
  • an R (red) organic EL layer and a G (green) organic EL are formed on the TFT substrate 1 as a plurality of types of thin film patterns having a fixed shape.
  • a method of manufacturing an organic EL display device by forming a layer and a B (blue) organic EL layer will be described.
  • the case where the R organic EL layer 3 ⁇ / b> R is formed on the TFT substrate 1 will be described with reference to FIGS. 38 and 39.
  • the vapor deposition mask 14 held by being attracted to the second magnetic chuck 44 is placed above the TFT substrate 1 placed on the first magnetic chuck 42.
  • the film 4 is brought into close contact with the TFT substrate 1. Thereby, the opening pattern 6 of the vapor deposition mask 14 is positioned on the R corresponding anode electrode 2 ⁇ / b> R of the TFT substrate 1.
  • the electromagnet 56 of the first magnetic chuck 42 is turned on and the electromagnet 56 of the second magnetic chuck 44 is turned off.
  • the member 10 is attracted to move the vapor deposition mask 14 from the second magnetic chuck 44 onto the TFT substrate 1.
  • the TFT substrate 1 and the vapor deposition mask 14 are integrally held in the first magnetic chuck 42 and placed in a vacuum chamber of a vacuum vapor deposition apparatus (not shown).
  • the R organic EL layer 3 ⁇ / b> R is vacuum-deposited on the R organic EL layer forming region on the R corresponding anode electrode 2 ⁇ / b> R of the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 14.
  • the first magnetic chuck 42 is taken out from the vacuum chamber, and the second magnetic chuck 44 is placed on the vapor deposition mask 14 as shown in FIG. 39B, and the second magnetic chuck 44 is placed as shown in FIG.
  • the electromagnet 56 of the magnetic chuck 44 is turned on and the electromagnet 56 of the first magnetic chuck 42 is turned off, and the metal member 10 of the vapor deposition mask 14 is attracted by the second magnetic chuck 44 so that the vapor deposition mask 14 is attached to the TFT substrate 1 side.
  • the R organic EL layer 3 ⁇ / b> R is formed on the R corresponding anode electrode 2 ⁇ / b> R of the TFT substrate 1.
  • the vapor deposition mask 14 that is attracted and held by the second magnetic chuck 44 is placed above the TFT substrate 1 placed on the first magnetic chuck 42. Positioning and observing the mask-side alignment mark 40 and the G substrate-side alignment mark with a microscope, as shown in FIG. After the alignment with the TFT substrate 1, the film 4 is brought into close contact with the TFT substrate 1. Thereby, the opening pattern 6 of the vapor deposition mask 14 is positioned on the G corresponding anode electrode 2G of the TFT substrate 1.
  • the electromagnet 56 of the first magnetic chuck 42 is turned on and the electromagnet 56 of the second magnetic chuck 44 is turned off.
  • the member 10 is attracted to move the vapor deposition mask 14 from the second magnetic chuck 44 onto the TFT substrate 1.
  • the TFT substrate 1 and the vapor deposition mask 14 are integrally held in the first magnetic chuck 42 and installed in the vacuum chamber of the vacuum vapor deposition apparatus.
  • the G organic EL layer 3G is vacuum-deposited on the G organic EL layer forming region on the G corresponding anode electrode 2G of the TFT substrate 1 through the opening pattern 6.
  • the first magnetic chuck 42 is taken out from the vacuum chamber, the second magnetic chuck 44 is placed on the vapor deposition mask 14 as shown in FIG. 41B, and the second magnetic chuck 44 is placed as shown in FIG.
  • the electromagnet 56 of the magnetic chuck 44 is turned on and the electromagnet 56 of the first magnetic chuck 42 is turned off, and the metal member 10 of the vapor deposition mask 14 is attracted by the second magnetic chuck 44 to bring the vapor deposition mask 14 from the TFT substrate 1 side.
  • the G organic EL layer 3G is formed on the G corresponding anode electrode 2G of the TFT substrate 1.
  • the vapor deposition mask 14 that is attracted and held by the second magnetic chuck 44 is placed above the TFT substrate 1 placed on the first magnetic chuck 42. Positioning, while observing the mask side alignment mark 40 and the B substrate side alignment mark with a microscope, as shown in FIG. After the alignment with the TFT substrate 1, the film 4 is brought into close contact with the TFT substrate 1. Thereby, the opening pattern 6 of the vapor deposition mask 14 is positioned on the B corresponding anode electrode 2 ⁇ / b> B of the TFT substrate 1.
  • the electromagnet 56 of the first magnetic chuck 42 is turned on and the electromagnet 56 of the second magnetic chuck 44 is turned off.
  • the member 10 is attracted to move the vapor deposition mask 14 from the second magnetic chuck 44 onto the TFT substrate 1.
  • the TFT substrate 1 and the vapor deposition mask 14 are integrally held in the first magnetic chuck 42 and installed in the vacuum chamber of the vacuum vapor deposition apparatus.
  • the B organic EL layer 3B is vacuum-deposited on the B organic EL layer forming region on the B corresponding anode electrode 2B of the TFT substrate 1 through the opening pattern 6.
  • the first magnetic chuck 42 is taken out of the vacuum chamber, and the second magnetic chuck 44 is placed on the vapor deposition mask 14 as shown in FIG. 11B, and the second magnetic chuck 44 is placed as shown in FIG.
  • the electromagnet 56 of the magnetic chuck 44 is turned on and the electromagnet 56 of the first magnetic chuck 42 is turned off, and the metal member 10 of the vapor deposition mask 14 is attracted by the second magnetic chuck 44 so that the vapor deposition mask 14 is placed on the TFT substrate 1.
  • the B organic EL layer 3B is formed on the B corresponding anode electrode 2B of the TFT substrate 1.
  • the vapor deposition mask 14 is transferred from the second magnetic chuck 44 side to the first magnetic chuck 42 side in the same manner as described above, and is subjected to plasma treatment in the plasma processing apparatus and adhered to the vapor deposition mask 14. Material is removed. The vapor deposition mask 14 thus cleaned is transferred again to the second magnetic chuck 44 and held on the second magnetic chuck 44, or while being held on the first magnetic chuck 42. Stored. Therefore, there is no possibility that the vapor deposition mask 14 is twisted or bent and the shape of the opening pattern 6 is lost or displaced.
  • the formation process of the said R organic EL layer 3R, G organic EL layer 3G, and B organic EL layer 3B can be performed as a series of processes using the same vapor deposition mask 14.
  • FIG. 44A and 44B are views showing a fourth embodiment of the vapor deposition mask according to the present invention, in which FIG. 44A is a plan view, FIG. 44B is a bottom view, and FIG. 44C is a sectional view taken along line EE of FIG. (D) is a partially enlarged view of (c).
  • the fourth embodiment of the vapor deposition mask according to the present invention is different from the first to third embodiments in that the film 4 is an elongated metal member 10 described later as shown in FIGS. 44 (a) and 44 (b).
  • the metal member 10 has a plurality of openings 9 separated by bridges 39 provided at predetermined portions that do not affect the formation of the organic EL layer. Is formed. Thereby, the rigidity of the metal member 10 is increased and bending can be suppressed. Therefore, the alignment accuracy between the vapor deposition mask 14 and the substrate can be further improved, and the formation accuracy of the thin film pattern can be further improved.
  • the shape of the film 4 is larger than the thin film pattern corresponding to the surface 4b opposite to the contact surface 4a with the substrate and the thin film pattern formation region of the substrate.
  • a metal member 10 made of, for example, a magnetic material and having a plurality of through-holes 9 separated by a plurality of bridges 39 is surface-bonded as indicated by arrows in the figure, and the mask shown in FIG. The member 11 is formed.
  • the surface bonding is preferably performed by using non-flux solder 47 applied on the metal film 46 using a film 4 having a part (for example, a peripheral region) coated with the metal film 46 as shown in FIG.
  • the film 4 may be non-flux soldered to the metal member 10.
  • a metal film 46 is formed in the peripheral region of the plurality of regions 66 of the film 4 corresponding to the plurality of regions on the substrate. It is preferable to use the film 4 in which the non-flux solder 47 is applied on the metal film 46 so as to surround the regions 66.
  • Reference numeral 67 shown in FIGS. 46 and 47 is an opening formed corresponding to the mask side alignment mark 40 formed on the metal member 10, and transmits the substrate side alignment mark on the substrate through the film 4. It is for making observation possible.
  • the mask member 11 is placed on a reference substrate 38 (for example, a dummy substrate of an organic EL display TFT substrate) on which the reference pattern 43 is formed, the mask side While observing the alignment mark 40 and the substrate-side alignment mark (not shown) with, for example, a microscope, the mask member 11 and the reference substrate 38 are aligned by adjusting each mark so as to form a certain positional relationship.
  • a reference substrate 38 for example, a dummy substrate of an organic EL display TFT substrate
  • the reference substrate 38 at the portion of the film 4 positioned in the opening 9 of the metal member 10 is used.
  • a hole 5 having a constant depth is formed leaving a thin layer of about 2 ⁇ m in the portion. If such an ultraviolet laser beam L is used, the carbon bond of the film 4 is broken and removed instantly by the optical energy of the laser beam L, so that clean drilling without residue can be performed. .
  • the substrate is formed with R organic EL layers 3R, G organic EL layers 3G, and B organic EL layers 3B as thin film patterns (regions on anode electrodes 2R, 2G, and 2B corresponding to the respective colors).
  • Is provided in advance with partition walls 68 made of, for example, a silicon nitride (SIN) film whose height is set so as to protrude from the surfaces of the formed organic EL layers 3R to 3B.
  • SIN silicon nitride
  • the vapor deposition mask 14 is placed on the TFT substrate 1, and the mask side alignment mark 40 formed on the vapor deposition mask 14 and the TFT substrate 1 are formed in advance. While the substrate-side alignment mark (not shown) is observed with a microscope, the vapor deposition mask 14 and the TFT substrate 1 are aligned by adjusting the two marks so as to have a predetermined positional relationship. As a result, the opening pattern 6 of the vapor deposition mask 14 coincides with the R corresponding anode electrode 2R of the TFT substrate 1 as shown in FIG.
  • the deposition mask 14 and the TFT substrate 1 are in close contact and integrated, for example, in a vacuum chamber of a vacuum deposition apparatus, and as shown in FIG.
  • the R organic EL layer 3R is formed by vapor deposition on the anode electrode 2R through the opening pattern 6 of the vapor deposition mask 14.
  • the vapor deposition mask 14 and the TFT substrate 1 that are in close contact with each other are taken out from the vacuum chamber of the vacuum vapor deposition apparatus, and the vapor deposition mask 14 is placed in each color organic EL as shown by arrows in FIG.
  • the TFT substrate 1 is slid and moved in the arrangement direction of the respective color organic EL layers 3R to 3B by the same dimension as the arrangement pitch of the layers 3R to 3B.
  • the opening pattern 6 of the vapor deposition mask 14 may be adjusted so as to coincide with the G corresponding anode electrode 2G, or the G substrate side alignment mark formed on the TFT substrate.
  • the mask side alignment mark 40 may be adjusted.
  • the mask 1 and the TFT substrate 1 are in close contact and integrated, for example, in a vacuum chamber of a vacuum evaporation apparatus, as shown in FIG. 49 (b). Then, the G organic EL layer 3G is formed by vapor deposition on the anode electrode 2G corresponding to G of the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 14.
  • the deposition mask 14 and the TFT substrate 1 that are closely integrated are taken out from the vacuum chamber of the vacuum deposition apparatus, and the deposition mask 14 is removed as shown in FIG.
  • the TFT substrate 1 is slid and moved in the arrangement direction of the color organic EL layers 3R to 3B by the same dimension as the arrangement pitch of the color organic EL layers 3R to 3B. It is made to match on B corresponding anode electrode 2B.
  • the vapor deposition mask 14 and the TFT substrate 1 are in close contact and integrated, for example, in a vacuum chamber of a vacuum vapor deposition apparatus.
  • the B organic EL layer 3B is formed by vapor deposition on the anode electrode 2G corresponding to G of the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 14.
  • the organic EL layers 3R to 3B of a plurality of colors can be sequentially formed using one mask 1, and the organic EL layer forming step can be performed efficiently.
  • the vapor deposition mask 14 when the vapor deposition mask 14 is slid in the horizontal direction, the surface 4a of the film 4 is not in contact with the organic EL layers 3R and 3G, and the protrusions 65 provided on the surface 4a of the film 4 are provided as partition walls. Since it slides on 68, the friction between the film 4 and the partition 68 can be reduced. Accordingly, the vapor deposition mask 14 can be stably slid on the TFT substrate 1.
  • the present invention is not limited to this, and any thin film pattern can be formed.
  • the present invention can be applied to anything such as formation of a color filter of a liquid crystal display device or formation of a wiring pattern of a semiconductor substrate.

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Abstract

The present invention is a vapor-deposition mask for forming, by vapor deposition, a thin-film pattern of a certain shape on a substrate, wherein in correspondence with a pre-decided forming region of the thin-film pattern on the substrate, a resin film is provided that has formed therein a through opening pattern having the same formed dimensions as the thin-film pattern and that passes visible light.

Description

蒸着マスク、蒸着マスクの製造方法及び薄膜パターン形成方法Vapor deposition mask, vapor deposition mask manufacturing method, and thin film pattern forming method
　本発明は、基板上にストライプ状の複数の薄膜パターンを一定の配列ピッチで平行に並べて蒸着形成するための蒸着マスクに関し、特に高精細な薄膜パターンの形成を可能にする蒸着マスク、蒸着マスクの製造方法及び薄膜パターン形成方法に係るものである。 The present invention relates to a vapor deposition mask for forming a plurality of striped thin film patterns on a substrate in parallel with a constant arrangement pitch, and particularly to a vapor deposition mask and vapor deposition mask capable of forming a high-definition thin film pattern. The present invention relates to a manufacturing method and a thin film pattern forming method.
　従来、この種の蒸着マスクは、所定のパターンに対応した形状の開口を有するものであり、基板に対して位置合わせした後、該基板上に密着させ、その後上記開口を介して基板に対するパターンニング蒸着をするようになっていた（例えば、特許文献１参照）。 Conventionally, this type of vapor deposition mask has an opening having a shape corresponding to a predetermined pattern. After aligning the substrate, the mask is brought into close contact with the substrate and then patterned on the substrate through the opening. Vapor deposition was performed (for example, refer to Patent Document 1).
　また、他の蒸着マスクは、所定の蒸着パターンに対応した複数の開口が設けられた強磁性材料から成るメタルマスクであり、基板の一面を覆うように基板に密着されると共に、基板の他面側に配置された磁石の磁力を利用して固定され、真空蒸着装置の真空槽内で上記開口を通して基板の一面に蒸着材料を付着させ、薄膜パターンを形成するようになっていた（例えば、特許文献２参照）。 The other vapor deposition mask is a metal mask made of a ferromagnetic material provided with a plurality of openings corresponding to a predetermined vapor deposition pattern, and is in close contact with the substrate so as to cover one surface of the substrate and the other surface of the substrate. It was fixed using the magnetic force of the magnet arranged on the side, and the deposition material was attached to one surface of the substrate through the opening in the vacuum chamber of the vacuum deposition apparatus to form a thin film pattern (for example, patent Reference 2).
特開２００３－７３８０４号公報JP 2003-73804 A 特開２００９－１６４０２０号公報JP 2009-164020 A
　しかし、このような従来の蒸着マスクにおいて、上記特許文献１に記載の蒸着マスクは、一般に、薄い金属板に薄膜パターンに対応した開口を例えばエッチング等により形成して作られるので、開口を高精度に形成することが困難であり、又金属板の熱膨張による位置ずれや反り等の影響で例えば３００ｄｐｉ以上の高精細な薄膜パターンの形成が困難であった。 However, in such a conventional vapor deposition mask, the vapor deposition mask described in Patent Document 1 is generally formed by forming an opening corresponding to a thin film pattern on a thin metal plate by, for example, etching or the like. For example, it is difficult to form a high-definition thin film pattern of 300 dpi or more due to the influence of misalignment and warpage due to thermal expansion of the metal plate.
　また、上記特許文献２に記載の蒸着マスクは、上記特許文献１に記載の蒸着マスクよりも基板との密着性は改善されるものの、特許文献１に記載の蒸着マスクと同様に、薄い金属板に薄膜パターンに対応した開口を例えばエッチング等により形成して作られるので、開口を高精度に形成することが困難であり、例えば３００ｄｐｉ以上の高精細な薄膜パターンの形成が困難であった。 Further, the vapor deposition mask described in Patent Document 2 has a thinner metal plate as in the vapor deposition mask described in Patent Document 1, although the adhesion to the substrate is improved as compared with the vapor deposition mask described in Patent Document 1. Since the opening corresponding to the thin film pattern is formed by, for example, etching or the like, it is difficult to form the opening with high accuracy. For example, it is difficult to form a high-definition thin film pattern of 300 dpi or more.
　そこで、本発明は、このような問題点に対処し、高精細な薄膜パターンの形成を可能にする蒸着マスク、蒸着マスクの製造方法及び薄膜パターン形成方法を提供することを目的とする。 Accordingly, an object of the present invention is to provide a vapor deposition mask, a vapor deposition mask manufacturing method, and a thin film pattern forming method capable of coping with such problems and forming a high-definition thin film pattern.
　上記目的を達成するために、第１の発明による蒸着マスクは、基板上に一定形状の薄膜パターンを蒸着形成するための蒸着マスクであって、前記基板上に予め定められた前記薄膜パターンの形成領域に対応して、該薄膜パターンと形状寸法の同じ貫通する開口パターンを形成した可視光を透過する樹脂製のフィルムを備えて構成されたものである。 In order to achieve the above object, a vapor deposition mask according to a first aspect of the present invention is a vapor deposition mask for vapor-depositing a thin film pattern having a predetermined shape on a substrate, and forming the predetermined thin-film pattern on the substrate. Corresponding to the region, it is configured to include a resin film that transmits visible light and has an opening pattern that penetrates the same thin film pattern and shape.
　好ましくは、前記フィルムの前記開口パターンの外側部分には、金属部材が設けられているのが望ましい。この場合、前記金属部材は、前記開口パターンに対応して該開口パターンよりも形状寸法が大きい開口部を有し、前記フィルムの一面に密接された薄板であるとよい。又は前記金属部材は、前記フィルムの一面又は内部に分散させて設けられた複数の薄片であってもよい。 Preferably, a metal member is provided on the outer side of the opening pattern of the film. In this case, the metal member may be a thin plate that has an opening having a larger size than the opening pattern corresponding to the opening pattern and is in close contact with one surface of the film. Alternatively, the metal member may be a plurality of thin pieces distributed on one surface or inside of the film.
　また、第２の発明による蒸着マスクの製造方法は、基板上に予め定められた薄膜パターンの形成領域に対応して、可視光を透過する樹脂製のフィルムに前記薄膜パターンと形状寸法の同じ貫通する開口パターンを形成して製造する蒸着マスクの製造方法であって、前記薄膜パターンを蒸着形成しようとする蒸着対象の基板上、又は前記薄膜パターンと同じ配列ピッチで並べて、該薄膜パターンと形状寸法の同じ複数の基準パターンを設けた基準基板上に前記フィルムを密着する第１ステップと、前記蒸着対象の基板上又は前記基準基板上の前記薄膜パターンの形成領域又は前記基準パターンに対応する前記フィルムの部分を加工して、前記薄膜パターンと形状寸法の同じ開口パターンを形成する第２ステップと、を含むものである。 According to a second aspect of the present invention, there is provided a method of manufacturing a vapor deposition mask, wherein a resin film that transmits visible light has the same shape and dimension as a thin film pattern corresponding to a predetermined thin film pattern formation region on a substrate. A method of manufacturing a vapor deposition mask that is produced by forming an opening pattern, wherein the thin film pattern is arranged on a substrate to be vapor deposited, or arranged at the same arrangement pitch as the thin film pattern, and the thin film pattern and shape dimensions A first step of closely contacting the film on a reference substrate provided with the same plurality of reference patterns, and a film formation region on the substrate to be deposited or on the reference substrate or the film corresponding to the reference pattern And a second step of forming an opening pattern having the same shape and dimension as the thin film pattern.
　好ましくは、前記第１ステップは、前記フィルムの一面に、前記薄膜パターンに対応して該薄膜パターンよりも形状寸法が大きい開口部を設けた金属部材を密接させてマスク用部材を形成した後、前記蒸着対象の基板上又は前記基準基板上の前記薄膜パターンの形成領域又は前記基準パターンに対応した部分が前記開口部内に位置するように位置決めして行われるのが望ましい。 Preferably, the first step includes forming a mask member on one surface of the film by closely contacting a metal member provided with an opening having a shape dimension larger than that of the thin film pattern corresponding to the thin film pattern. It is desirable that the thin film pattern formation region on the deposition target substrate or the reference substrate or a portion corresponding to the reference pattern is positioned so as to be positioned in the opening.
　さらに、前記第２ステップは、前記フィルムの部分にレーザ光を照射して実行されるのが望ましい。この場合、前記第２ステップは、一定のエネルギー密度のレーザ光を照射して前記フィルムを一定速度で加工して一定深さの穴部を形成した後、該穴部の底部にエネルギー密度を下げたレーザ光を照射して前記速度よりも遅い速度で加工して前記穴部を貫通させるのがよい。 Furthermore, it is preferable that the second step is performed by irradiating the film portion with laser light. In this case, the second step is to irradiate a laser beam with a constant energy density to process the film at a constant speed to form a hole with a constant depth, and then lower the energy density at the bottom of the hole. It is preferable that the laser beam is irradiated and processed at a speed slower than the speed to penetrate the hole.
　又は、前記第２ステップは、一定のエネルギー密度のレーザ光を照射して前記フィルムに前記穴部を形成した後、前記フィルムの炭素と反応し該炭素を気化させる反応性ガスにより、又は反応性ガスをプラズマ化して生成されたラジカルイオンにより前記穴部の底部をエッチングし、該穴部を貫通させて前記開口パターンを形成するよう実行してもよい。 Alternatively, in the second step, the hole is formed in the film by irradiating a laser beam having a constant energy density, and then the reactive gas reacts with the carbon of the film to vaporize the carbon, or is reactive. The opening portion may be formed by etching the bottom of the hole with radical ions generated by converting the gas into a plasma and penetrating the hole.
　そして、ここで使用する前記レーザ光は、波長が４００ｎｍ以下であるのが望ましい。 And, it is desirable that the laser light used here has a wavelength of 400 nm or less.
　また、第３の発明による蒸着マスクの製造方法は、基板上に予め定められた薄膜パターンの形成領域に対応して、可視光を透過する樹脂製のフィルムに前記薄膜パターンと形状寸法の同じ貫通する開口パターンを形成して製造する蒸着マスクの製造方法であって、前記フィルムの一面に前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状寸法が大きい開口部を設けた金属部材を密接してマスク用部材を形成する第１ステップと、前記開口部内の前記フィルムの部分をエッチング加工して、前記薄膜パターンと形状寸法の同じ開口パターンを形成する第２ステップと、を含むものである。 According to a third aspect of the present invention, there is provided a method of manufacturing a vapor deposition mask, wherein a resin film that transmits visible light has the same shape and dimension as the thin film pattern corresponding to a predetermined thin film pattern formation region on the substrate. A method for manufacturing a vapor deposition mask for manufacturing by forming an opening pattern, wherein a metal member provided with an opening having a shape dimension larger than that of the thin film pattern corresponding to a region where the thin film pattern is formed on one surface of the film. A first step of closely forming a mask member, and a second step of forming an opening pattern having the same shape and dimension as the thin film pattern by etching a portion of the film in the opening.
　好ましくは、前記第２ステップは、前記フィルムの他面側から該フィルムをエッチング加工して前記フィルムの一面側の開口面積が前記薄膜パターンの面積と同じで、前記フィルムの他面側の開口面積が前記一面側の開口面積よりも大きい前記開口パターンを形成するのが望ましい。 Preferably, in the second step, the film is etched from the other surface side of the film, the opening area on the one surface side of the film is the same as the area of the thin film pattern, and the opening area on the other surface side of the film It is desirable to form the opening pattern having a larger opening area on the one surface side.
　また、第４の発明による薄膜パターン形成方法は、基板上に予め定められた薄膜パターンの形成領域に対応して、可視光を透過する樹脂製のフィルムに前記薄膜パターンと形状寸法の同じ貫通する開口パターンを形成して蒸着マスクを製造し、該蒸着マスクを使用して薄膜パターンを形成する薄膜パターン形成方法であって、前記基板上に前記フィルムを密着させる第１ステップと、前記基板上の前記薄膜パターンの形成領域に対応する前記フィルムの部分にレーザ光を照射し、当該部分の前記フィルムに前記薄膜パターンと形状寸法の同じ開口パターンを設けて前記蒸着マスクを形成する第２ステップと、前記基板上の前記薄膜パターンの形成領域に対応した部分に前記蒸着マスクの前記開口を介して蒸着する第３ステップと、前記蒸着マスクを剥離する第４ステップと、を含むものである。 According to a fourth aspect of the present invention, there is provided a thin film pattern forming method that penetrates a resin film that transmits visible light and has the same shape and dimension as a predetermined thin film pattern formation region on a substrate. A thin film pattern forming method for forming a vapor deposition mask by forming an opening pattern, and forming a thin film pattern using the vapor deposition mask, the first step of closely contacting the film on the substrate, and on the substrate A second step of irradiating a portion of the film corresponding to the formation region of the thin film pattern with a laser beam, forming an opening pattern having the same shape and dimension as the thin film pattern on the film of the portion; A third step of depositing through the opening of the deposition mask on a portion of the substrate corresponding to the formation region of the thin film pattern; A fourth step of separating the disk, is intended to include.
　好ましくは、前記第１ステップにおいては、内部にチャック手段を備えたステージ上に前記基板を載置すると共に、前記フィルムの一面に、前記薄膜パターンに対応して該薄膜パターンよりも形状寸法が大きい開口部を設けた磁性材料又は非磁性材料からなる金属部材を密接させて形成されたマスク用部材を、前記基板上の前記薄膜パターンの形成領域が前記開口部内に位置するように位置決めした後、前記チャック手段により前記金属部材を前記基板上に吸着して前記フィルムを挟持するのが望ましい。 Preferably, in the first step, the substrate is placed on a stage having an internal chuck means, and a shape dimension is larger on one surface of the film than the thin film pattern corresponding to the thin film pattern. After positioning a mask member formed by closely contacting a metal member made of a magnetic material or a non-magnetic material provided with an opening so that a formation region of the thin film pattern on the substrate is located in the opening, It is preferable that the metal member is adsorbed onto the substrate by the chuck means to sandwich the film.
　さらに、第５の発明による薄膜パターン形成方法は、基板上に予め定められた薄膜パターンの形成領域に対応して、可視光を透過する樹脂製のフィルムに前記薄膜パターンと形状寸法の同じ貫通する開口パターンを形成した蒸着マスクを使用して薄膜パターンを形成する薄膜パターン形成方法であって、前記フィルムの前記開口パターンの外側部分に金属部材を設けて構成された前記蒸着マスクの前記開口パターンを、前記基板の前記薄膜パターンの形成領域に位置合わせした状態で前記基板上に載置する第１ステップと、前記蒸着マスクの前記開口パターンを介して前記基板上の前記薄膜パターンの形成領域に蒸着し、薄膜パターンを形成する第２ステップと、を行うものである。 Furthermore, the thin film pattern forming method according to the fifth aspect of the present invention penetrates through a resin film that transmits visible light and has the same shape and dimension as a predetermined thin film pattern formation region on the substrate. A thin film pattern forming method for forming a thin film pattern using a deposition mask having an opening pattern formed thereon, wherein the opening pattern of the deposition mask is configured by providing a metal member on an outer portion of the opening pattern of the film. A first step of placing the substrate on the substrate in alignment with the thin film pattern formation region of the substrate, and vapor deposition on the thin film pattern formation region on the substrate through the opening pattern of the vapor deposition mask. And a second step of forming a thin film pattern.
　好ましくは、前記第１ステップは、前記蒸着マスクの前記金属部材側を保持手段の平坦面に吸着して保持した状態で前記開口パターンを、チャック手段上に載置された前記基板の前記薄膜パターンの形成領域に位置合わせした後、前記チャック手段により前記金属部材を吸着して前記蒸着マスクを前記保持手段から前記基板上に移すように実施されるのが望ましい。 Preferably, in the first step, the thin film pattern of the substrate placed on the chuck means is placed with the opening pattern in a state where the metal member side of the vapor deposition mask is attracted to and held by the flat surface of the holding means. After the alignment with the formation region, the metal member is adsorbed by the chuck means, and the vapor deposition mask is preferably transferred from the holding means onto the substrate.
　この場合、前記薄膜パターンが複数種の薄膜パターンであり、前記フィルムに形成された開口パターンが前記複数種の薄膜パターンのうち、一の薄膜パターンに対応して形成されたものであるときには、前記第１ステップから前記第２ステップを行って前記一の薄膜パターンを形成した後、前記蒸着マスクを前記基板上から剥離するステップと、前記蒸着マスクの前記開口パターンを前記基板の他の薄膜パターンの形成領域に位置合わせした後、前記蒸着マスクを前記基板上に載置するステップと、前記蒸着マスクの開口パターンを介して前記他の薄膜パターンの形成領域に蒸着し、他の薄膜パターンを形成するステップと、を行うとよい。 In this case, when the thin film pattern is a plurality of types of thin film patterns and the opening pattern formed in the film is formed corresponding to one thin film pattern among the plurality of types of thin film patterns, After performing the second step from the first step to form the one thin film pattern, the step of peeling the vapor deposition mask from the substrate, and the opening pattern of the vapor deposition mask on the other thin film pattern of the substrate After aligning with the formation region, placing the vapor deposition mask on the substrate, and depositing on the formation region of the other thin film pattern through the opening pattern of the vapor deposition mask to form another thin film pattern And step.
　又は、前記薄膜パターンが一定の配列ピッチで並べて形成される複数種の薄膜パターンであり、前記フィルムに形成された前記開口パターンが前記複数種の薄膜パターンのうち、一の薄膜パターンに対応して形成されたものであるときには、前記第１ステップから前記第２ステップを行って前記一の薄膜パターンを形成した後、前記蒸着マスクを前記複数種の薄膜パターンの配列ピッチと同寸法だけ前記複数種の薄膜パターンの並び方向に前記基板上をスライド移動するステップと、前記基板の他の薄膜パターンの形成領域に前記蒸着マスクの前記開口パターンを介して蒸着し、他の薄膜パターンを形成するステップと、を行ってもよい。 Alternatively, the thin film patterns are a plurality of types of thin film patterns formed by arranging at a constant arrangement pitch, and the opening pattern formed in the film corresponds to one thin film pattern among the plurality of types of thin film patterns. If formed, the first step to the second step are performed to form the one thin film pattern, and then the vapor deposition mask is moved to the plurality of types by the same dimension as the arrangement pitch of the plurality of types of thin film patterns. Sliding on the substrate in the direction in which the thin film patterns are aligned, and depositing another thin film pattern on the substrate through the opening pattern of the deposition mask to form another thin film pattern; , May be performed.
　本発明によれば、蒸着材料が通過する開口パターンは、メタルマスクに比べて厚みの薄いフィルムに加工形成されるため、開口パターンの形成精度を向上することができる。したがって、高精細な薄膜パターンの形成を可能にすることができる。 According to the present invention, since the opening pattern through which the vapor deposition material passes is processed and formed into a film having a thickness smaller than that of the metal mask, the formation accuracy of the opening pattern can be improved. Therefore, it is possible to form a high-definition thin film pattern.
本発明による蒸着マスクの第１実施形態の製造方法及び本発明による薄膜パターン形成方法の第１の実施形態を示す断面説明図である。It is sectional explanatory drawing which shows 1st Embodiment of the manufacturing method of 1st Embodiment of the vapor deposition mask by this invention, and the thin film pattern formation method by this invention. 本発明による蒸着マスクの第１実施形態の別の製造方法を示す断面図である。It is sectional drawing which shows another manufacturing method of 1st Embodiment of the vapor deposition mask by this invention. 本発明による蒸着マスクの第１実施形態の更に別の製造方法を示す断面図である。It is sectional drawing which shows another manufacturing method of 1st Embodiment of the vapor deposition mask by this invention. 本発明による薄膜パターン形成方法の第２の実施形態を示す図であり、有機ＥＬ表示装置のＲ有機ＥＬ層形成工程を示す断面説明図である。It is a figure which shows 2nd Embodiment of the thin film pattern formation method by this invention, and is cross-sectional explanatory drawing which shows the R organic electroluminescent layer formation process of an organic electroluminescence display. 上記Ｒ有機ＥＬ層形成工程において使用するマスク用部材の形成について示す説明図である。It is explanatory drawing shown about formation of the member for masks used in the said R organic electroluminescent layer formation process. 本発明による薄膜パターン形成方法の第２の実施形態を示す図であり、有機ＥＬ表示装置のＧ有機ＥＬ層形成工程を示す断面説明図である。It is a figure which shows 2nd Embodiment of the thin film pattern formation method by this invention, and is sectional explanatory drawing which shows G organic electroluminescent layer formation process of an organic electroluminescence display. 本発明による薄膜パターン形成方法の第２の実施形態を示す図であり、有機ＥＬ表示装置のＢ有機ＥＬ層形成工程を示す断面説明図である。It is a figure which shows 2nd Embodiment of the thin film pattern formation method by this invention, and is sectional explanatory drawing which shows the B organic electroluminescent layer formation process of an organic electroluminescence display. 上記有機ＥＬ表示装置のカソード電極層形成工程を示す断面説明図である。It is sectional explanatory drawing which shows the cathode electrode layer formation process of the said organic electroluminescent display apparatus. 上記有機ＥＬ層形成工程において使用する蒸着マスクを形成するためのレーザ加工装置の一構成例を示す正面図である。It is a front view which shows one structural example of the laser processing apparatus for forming the vapor deposition mask used in the said organic EL layer formation process. 本発明による蒸着マスクの第２実施形態の製造に使用するフォトマスクの一構成例を示す図であり、（ａ）は平面図、（ｂ）は（ａ）のＢ－Ｂ線断面矢視図である。It is a figure which shows one structural example of the photomask used for manufacture of 2nd Embodiment of the vapor deposition mask by this invention, (a) is a top view, (b) is the BB sectional view taken on the line of the arrow of (a). It is. 本発明による蒸着マスクの第２の実施形態の製造方法の変形例を示す断面説明図である。It is sectional explanatory drawing which shows the modification of the manufacturing method of 2nd Embodiment of the vapor deposition mask by this invention. 本発明による蒸着マスクの第２実施形態の別の製造方法を示す工程図である。It is process drawing which shows another manufacturing method of 2nd Embodiment of the vapor deposition mask by this invention. 本発明による蒸着マスクの第２実施形態を示す図であり、（ａ）は平面図、（ｂ）は（ａ）のＣ－Ｃ線断面矢視図である。It is a figure which shows 2nd Embodiment of the vapor deposition mask by this invention, (a) is a top view, (b) is the CC sectional view taken on the line of (a). 本発明による蒸着マスクの第２実施形態の変形例を示す平面図である。It is a top view which shows the modification of 2nd Embodiment of the vapor deposition mask by this invention. 図１２の製造方法におけるマスク用部材の製造の詳細を示す説明図である。It is explanatory drawing which shows the detail of manufacture of the member for masks in the manufacturing method of FIG. 上記マスク用部材の他の形成例を示す説明図である。It is explanatory drawing which shows the other example of formation of the said member for masks. 上記マスク用部材の更に他の形成例を示す説明図である。It is explanatory drawing which shows the other example of formation of the said member for masks. 上記マスク用部材の更に他の形成例を示す説明図である。It is explanatory drawing which shows the other example of formation of the said member for masks. 上記マスク用部材の更に他の形成例を示す説明図である。It is explanatory drawing which shows the other example of formation of the said member for masks. 上記マスク用部材の更に他の形成例を示す説明図である。It is explanatory drawing which shows the other example of formation of the said member for masks. 上記マスク用部材の更に他の形成例を示す説明図である。It is explanatory drawing which shows the other example of formation of the said member for masks. 本発明による蒸着マスクの第２実施形態の更に別の製造方法を示す図であり、その前半工程を示す断面図である。It is a figure which shows another manufacturing method of 2nd Embodiment of the vapor deposition mask by this invention, and is sectional drawing which shows the first half process. 本発明による蒸着マスクの第２実施形態の更に別の製造方法を示す図であり、その中間工程を示す断面図である。It is a figure which shows another manufacturing method of 2nd Embodiment of the vapor deposition mask by this invention, and is sectional drawing which shows the intermediate process. 本発明による蒸着マスクの第２実施形態の更に別の製造方法を示す図であり、その後半工程を示す断面図である。It is a figure which shows another manufacturing method of 2nd Embodiment of the vapor deposition mask by this invention, and is sectional drawing which shows the latter half process. 本発明による蒸着マスクの第２の実施形態の製造方法であって、開口パターンのレーザ加工について示す説明図である。It is a manufacturing method of 2nd Embodiment of the vapor deposition mask by this invention, Comprising: It is explanatory drawing shown about the laser processing of an opening pattern. 上記レーザ加工に使用する基準基板の一構成例を示す平面図である。It is a top view which shows one structural example of the reference | standard board | substrate used for the said laser processing. 金属部材の開口部と基準基板の基準パターンとの間の位置ずれ量が許容値内にあるか否かを検出する方法について示す説明図である。It is explanatory drawing shown about the method to detect whether the positional offset amount between the opening part of a metal member and the reference | standard pattern of a reference | standard board | substrate exists in tolerance value. 上記レーザ加工について説明するフォローチャートである。It is a follow chart explaining the said laser processing. エッチング加工により開口パターンを形成して本発明の蒸着マスクを製造する方法を説明する断面図である。It is sectional drawing explaining the method of forming an opening pattern by an etching process and manufacturing the vapor deposition mask of this invention. 図２９の方法により製造された蒸着マスクを使用する薄膜パターン形成方法を説明する図であり、前半工程を示す断面図である。It is a figure explaining the thin film pattern formation method using the vapor deposition mask manufactured by the method of FIG. 29, and is sectional drawing which shows the first half process. 図２９の方法により製造された蒸着マスクを使用する薄膜パターン形成方法を説明する図であり、後半工程を示す断面図である。It is a figure explaining the thin film pattern formation method using the vapor deposition mask manufactured by the method of FIG. 29, and is sectional drawing which shows a latter half process. エッチング加工して開口パターンを形成した本発明による蒸着マスクの利点を従来のメタルマスクと比較して示す説明図であり、（ａ）はメタルマスクを示し、（ｂ）は本発明の蒸着マスクを示す。It is explanatory drawing which shows the advantage of the vapor deposition mask by this invention which formed the opening pattern by etching compared with the conventional metal mask, (a) shows a metal mask, (b) shows the vapor deposition mask of this invention. Show. 本発明による蒸着マスクの第３実施形態を示す図であり、（ａ）は平面図、（ｂ）は（ａ）のＤ－Ｄ線断面矢視図である。It is a figure which shows 3rd Embodiment of the vapor deposition mask by this invention, (a) is a top view, (b) is the DD sectional view taken on the line of (a). 本発明の基礎となる蒸着マスクの一構成例であり、（ａ）は平面図、（ｂ）は側面図である。It is one structural example of the vapor deposition mask used as the foundation of this invention, (a) is a top view, (b) is a side view. 本発明による蒸着マスクの第３実施形態の製造方法を説明する図であって、マスク用部材を形成する工程を示す断面図である。It is a figure explaining the manufacturing method of 3rd Embodiment of the vapor deposition mask by this invention, Comprising: It is sectional drawing which shows the process of forming the member for masks. 本発明による蒸着マスクの第３実施形態の製造方法を説明する図であって、開口パターン形成工程を示す平面図である。It is a figure explaining the manufacturing method of 3rd Embodiment of the vapor deposition mask by this invention, Comprising: It is a top view which shows an opening pattern formation process. 本発明による蒸着マスクの第３実施形態の変形例を示す平面図である。It is a top view which shows the modification of 3rd Embodiment of the vapor deposition mask by this invention. 本発明による蒸着マスクの第２又は第３実施形態を使用して複数種の薄膜パターンを形成する方法を説明する図であり、赤色有機ＥＬ層の形成工程の前半工程を示す断面図である。It is a figure explaining the method to form a multiple types of thin film pattern using 2nd or 3rd embodiment of the vapor deposition mask by this invention, and is sectional drawing which shows the first half process of the formation process of a red organic electroluminescent layer. 上記赤色有機ＥＬ層の形成工程の後半工程を示す断面図である。It is sectional drawing which shows the latter half process of the formation process of the said red organic electroluminescent layer. 緑色有機ＥＬ層の形成工程の前半工程を示す断面図である。It is sectional drawing which shows the first half process of the formation process of a green organic electroluminescent layer. 上記緑色有機ＥＬ層の形成工程の後半工程を示す断面図である。It is sectional drawing which shows the latter half process of the formation process of the said green organic electroluminescent layer. 青色有機ＥＬ層の形成工程の前半工程を示す断面図である。It is sectional drawing which shows the first half process of the formation process of a blue organic electroluminescent layer. 上記青色有機ＥＬ層の形成工程の後半工程を示す断面図である。It is sectional drawing which shows the latter half process of the formation process of the said blue organic electroluminescent layer. 本発明による蒸着マスクの第４実施形態を示す図であり、（ａ）は平面図、（ｂ）は底面図、（ｃ）は（ａ）のＥ－Ｅ線断面矢視図、（ｄ）は（ｃ）の一部拡大図である。It is a figure which shows 4th Embodiment of the vapor deposition mask by this invention, (a) is a top view, (b) is a bottom view, (c) is the EE sectional view taken on the arrow of (a), (d) FIG. 4 is a partially enlarged view of (c). 本発明による蒸着マスクの第４実施形態の製造について説明する工程図である。It is process drawing explaining manufacture of 4th Embodiment of the vapor deposition mask by this invention. 本発明の蒸着マスクの第４実施形態に使用するフィルムの一構成例を示す平面図である。It is a top view which shows one structural example of the film used for 4th Embodiment of the vapor deposition mask of this invention. 本発明の蒸着マスクに使用するフィルムの他の構成例を示す平面図である。It is a top view which shows the other structural example of the film used for the vapor deposition mask of this invention. 本発明による蒸着マスクの第４実施形態を使用して薄膜パターンを形成する方法を説明する図であり、Ｒ有機ＥＬ層形成工程を示す工程図である。It is a figure explaining the method of forming a thin film pattern using 4th Embodiment of the vapor deposition mask by this invention, and is process drawing which shows R organic electroluminescent layer formation process. Ｇ有機ＥＬ層形成工程を示す工程図である。It is process drawing which shows G organic electroluminescent layer formation process. Ｂ有機ＥＬ層形成工程を示す工程図である。It is process drawing which shows B organic electroluminescent layer formation process. 図４８～図５０の薄膜パターン形成方法において使用するＴＦＴ基板の一構成例を示す断面図である。FIG. 51 is a cross-sectional view showing a configuration example of a TFT substrate used in the thin film pattern forming method of FIGS. 48 to 50.
　以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明による蒸着マスクを使用して行う薄膜パターン形成方法の第１の実施形態を示す断面説明図である。本発明による蒸着マスクは、基板上に予め定められた薄膜パターンの形成領域に対応して、該薄膜パターンと形状寸法の同じ貫通する開口パターンを形成した可視光を透過する樹脂製のフィルムを備えて構成されたもので、上記薄膜パターン形成方法の第１の実施形態の実施過程で製造されるものである。以下、基板が有機ＥＬ表示装置のＴＦＴ基板１であり、薄膜パターンが赤色（Ｒ）に対応したアノード電極２Ｒ上に形成されるＲ有機ＥＬ層３Ｒである場合に、該Ｒ有機ＥＬ層３Ｒを形成するための薄膜パターン形成方法の第１の実施形態を説明しながら、本発明による蒸着マスクの第１実施形態について説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional explanatory view showing a first embodiment of a thin film pattern forming method performed using a vapor deposition mask according to the present invention. The vapor deposition mask according to the present invention includes a resin film that transmits visible light and has an opening pattern that penetrates the thin film pattern and has the same shape and dimension as a predetermined thin film pattern formation region on the substrate. The thin film pattern forming method is manufactured in the implementation process of the first embodiment. Hereinafter, when the substrate is the TFT substrate 1 of the organic EL display device and the thin film pattern is the R organic EL layer 3R formed on the anode electrode 2R corresponding to red (R), the R organic EL layer 3R is The first embodiment of the vapor deposition mask according to the present invention will be described while explaining the first embodiment of the thin film pattern forming method for forming.
　なお、Ｒ有機ＥＬ層３Ｒは、Ｒ対応のアノード電極２Ｒ上に正孔注入層、正孔輸送層、Ｒ発光層、電子輸送層等、一般的な積層構造をとるように順次蒸着して形成されるが、ことでは、説明の便宜上Ｒ有機ＥＬ層３Ｒが１回の蒸着工程により形成されるものとして説明する。 The R organic EL layer 3R is formed by sequentially vapor-depositing on the R-compatible anode electrode 2R so as to have a general laminated structure such as a hole injection layer, a hole transport layer, an R light emitting layer, and an electron transport layer. However, for the sake of explanation, the R organic EL layer 3R will be described as being formed by a single vapor deposition step.
　上記薄膜パターン形成方法の第１の実施形態は、ＴＦＴ基板（単に「基板」とも言う）１上に可視光を透過する樹脂製のフィルム４を設置する第１ステップと、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒの部分に一定のエネルギー密度のレーザ光Ｌ１を照射して当該部分のフィルム４を一定の速度で一定深さまで掘り下げて穴部５を形成した後、該穴部５の底部にエネルギー密度を下げたレーザ光Ｌ２を照射し、穴部５の底部を上記速度よりも遅い速度でゆっくり加工して穴部５を貫通させ、Ｒ有機ＥＬ層３と形状寸法の同じ開口パターン６を有する本発明による蒸着マスク７の第１実施形態を形成する第２ステップと、Ｒ対応のアノード電極２Ｒ上に上記蒸着マスク７の開口パターン６を介してＲ有機ＥＬ層３を蒸着形成する第３ステップと、蒸着マスク７を剥離する第４ステップと、を実行するものである。 In the first embodiment of the thin film pattern forming method, a first step of installing a resin film 4 that transmits visible light on a TFT substrate (also simply referred to as “substrate”) 1 and an R on the TFT substrate 1 are described. A portion of the corresponding anode electrode 2R is irradiated with a laser beam L1 having a constant energy density, and the film 4 in the portion is dug down to a certain depth at a constant speed to form a hole portion 5. Then, the hole portion 5 is formed at the bottom of the hole portion 5. The laser beam L2 having a reduced energy density is irradiated, the bottom of the hole 5 is slowly processed at a speed slower than the above speed to penetrate the hole 5, and an opening pattern 6 having the same shape and dimension as the R organic EL layer 3 is formed. A second step of forming the first embodiment of the vapor deposition mask 7 according to the present invention, and a third step of vapor-depositing the R organic EL layer 3 on the R corresponding anode electrode 2R through the opening pattern 6 of the vapor deposition mask 7 Ste And flop, a fourth step of separating the deposition mask 7, and the execution.
　詳細には、先ず、第１ステップにおいては、ＴＦＴ基板１の各色対応のアノード電極２Ｒ～２Ｂを形成した面の上方に、例えば厚みが１０μｍ～３０μｍ程度のポリエチレンテレフタレート（ＰＥＴ）やポリイミド等の紫外線レーザアブレーションが可能なシート状のフィルム４を張設した後、図１（ａ）に示すように該フィルム４をＴＦＴ基板１面に設置する。この場合、フィルム４の上面を例えばウレタンゴムのような弾性部材で均一に押圧してフィルム４をＴＦＴ基板１面に密着させるとよい。又は、フィルム４のＴＦＴ基板１との密着面に粘着層を設け、この粘着層を介してフィルム４をＴＦＴ基板１面に密着させてもよい。或いは、自己粘着機能を付与したフィルムを利用することもできる。さらには、静電チャック等を使用してフィルム４をＴＦＴ基板１面に静電吸着させてもよい。さらには、内部に磁石のチャック手段を備えたステージ上にＴＦＴ基板１を載置した後、磁性材料を含んで構成され、有機ＥＬ層のパターンよりも形状寸法の大きい開口部を形成した金属部材を、Ｒ対応のアノード電極２Ｒが上記開口部内に位置するように位置合わせしてＴＦＴ基板１上に載置し、上記磁石の静磁界により上記金属部材をＴＦＴ基板１上に吸着してフィルム４をＴＦＴ基板１面に密着させてもよい。 Specifically, first, in the first step, ultraviolet light such as polyethylene terephthalate (PET) or polyimide having a thickness of about 10 μm to 30 μm is formed above the surface of the TFT substrate 1 where the anode electrodes 2R to 2B for each color are formed. After the sheet-like film 4 capable of laser ablation is stretched, the film 4 is placed on the surface of the TFT substrate 1 as shown in FIG. In this case, the upper surface of the film 4 is preferably pressed uniformly with an elastic member such as urethane rubber so that the film 4 is in close contact with the surface of the TFT substrate 1. Alternatively, an adhesive layer may be provided on the adhesion surface of the film 4 with the TFT substrate 1, and the film 4 may be adhered to the TFT substrate 1 surface via this adhesion layer. Or the film which provided the self-adhesion function can also be utilized. Furthermore, the film 4 may be electrostatically attracted to the surface of the TFT substrate 1 using an electrostatic chuck or the like. Furthermore, after the TFT substrate 1 is placed on a stage having a magnet chuck means inside, a metal member that is configured to include a magnetic material and that has an opening having a shape dimension larger than the pattern of the organic EL layer Is placed on the TFT substrate 1 so that the anode electrode 2R corresponding to R is positioned in the opening, and the metal member is adsorbed onto the TFT substrate 1 by the static magnetic field of the magnet to form the film 4 May be adhered to the surface of the TFT substrate 1.
　次に、第２ステップにおいては、上記フィルム４を透過して図示省略の撮像手段でＲ対応のアノード電極２Ｒの位置を検出し、該Ｒ対応のアノード電極２Ｒ上にレーザ光の照射位置を位置付ける。そして、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザを使用して、図１（ｂ）に示すように、先ず、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒに対応したフィルム４の部分にエネルギー密度が１Ｊ／ｃｍ２～２０Ｊ／ｃｍ２のレーザ光Ｌ１を照射し、下地層のアノード電極２Ｒが露出する直前の例えば２μｍ程度の厚みの層を残して穴部５を高速で形成した後、レーザ光Ｌ１の照射を一旦停止する。次に、同図（ｃ）に示すように、穴部５の底部に０．１Ｊ／ｃｍ２以下、望ましくは０．０６Ｊ／ｃｍ２以下までエネルギー密度を下げたレーザ光Ｌ２を照射し、穴部５の底部をゆっくり加工して穴部５を貫通させ、開口パターン６を有する本発明の蒸着マスク７（第１実施形態）を形成する。このような紫外線のレーザ光Ｌ１，Ｌ２の光エネルギーにより、フィルム４の炭素結合が一瞬のうちに破壊されて除去されるため、残渣の無いクリーンな穴あけ加工を行うことができる。また、一定深さまでは、エネルギー密度の高いレーザ光Ｌ１を照射して高速でフィルム４を加工し、その後、エネルギー密度を下げたレーザ光Ｌ２によりゆっくりと加工するようにしているので、加工時間を犠牲にせずに、下地層であるアノード電極２Ｒに与えるダメージを抑制してフィルム４のみを効率よく加工することができる。 Next, in the second step, the position of the anode electrode 2R corresponding to R is detected by an imaging means (not shown) through the film 4, and the irradiation position of the laser beam is positioned on the anode electrode 2R corresponding to R. . Then, using an excimer laser having a wavelength of 400 nm or less, for example, KrF248 nm, first, as shown in FIG. 1B, energy is applied to the portion of the film 4 corresponding to the anode electrode 2R corresponding to R on the TFT substrate 1. After the laser beam L1 having a density of 1 J / cm 2 to 20 J / cm 2 is irradiated and the hole 5 is formed at high speed, leaving a layer having a thickness of, for example, about 2 μm immediately before the anode electrode 2R of the underlayer is exposed, The irradiation with the laser beam L1 is temporarily stopped. Next, as shown in FIG. 3C, the bottom of the hole 5 is irradiated with laser light L2 having an energy density reduced to 0.1 J / cm 2 or less, preferably 0.06 J / cm 2 or less, The bottom part of the part 5 is slowly processed to penetrate the hole part 5 to form the vapor deposition mask 7 of the present invention having the opening pattern 6 (first embodiment). Since the carbon bonds of the film 4 are broken and removed in an instant by the light energy of the ultraviolet laser beams L1 and L2, clean drilling without residue can be performed. In addition, at a certain depth, the film 4 is processed at a high speed by irradiating the laser beam L1 having a high energy density, and thereafter, the processing is performed slowly by the laser beam L2 having a reduced energy density. Without sacrificing, it is possible to efficiently process only the film 4 while suppressing damage to the anode electrode 2R, which is the underlayer.
　上記第２ステップは、次のようにして行なうことができる。即ち、ＴＦＴ基板１を一定方向にステップ移動しながら、ＴＦＴ基板１の移動方向と交差する方向に一列に複数のマイクロレンズを並べて設けたマイクロレンズアレイを介してＲ対応のアノード電極２Ｒの部分にレーザ光Ｌ１，Ｌ２を照射し、フィルム４に開口パターン６を形成するとよい。または、ＴＦＴ基板１を基板面に平行な面内を２次元方向にステップ移動しながら、レーザ光Ｌ１，Ｌ２を照射してフィルム４に開口パターン６を形成してもよいし、ＴＦＴ基板１の複数のアノード電極２Ｒに対応して複数のマイクロレンズを設けたマイクロレンズアレイを介してレーザ光Ｌ１，Ｌ２を照射してフィルム４に開口パターン６を一括形成してもよい。さらには、シリンドリカルレンズにより細長状のレーザ光Ｌ１，Ｌ２を生成してフィルム４にストライプ状の開口パターン６を形成し、ストライプ状のＲ有機ＥＬ層３Ｒ（薄膜パターン）を形成してもよい。 The second step can be performed as follows. That is, while stepping the TFT substrate 1 in a certain direction, the anode electrode 2R corresponding to R is passed through a microlens array in which a plurality of microlenses are arranged in a row in a direction crossing the moving direction of the TFT substrate 1. The opening patterns 6 may be formed on the film 4 by irradiating the laser beams L1 and L2. Alternatively, the opening pattern 6 may be formed on the film 4 by irradiating the laser beams L1 and L2 while stepping the TFT substrate 1 in a two-dimensional direction in a plane parallel to the substrate surface. The opening patterns 6 may be formed in the film 4 by irradiating the laser beams L1 and L2 through a microlens array provided with a plurality of microlenses corresponding to the plurality of anode electrodes 2R. Further, the elongated laser beams L1 and L2 may be generated by a cylindrical lens to form the stripe-shaped opening pattern 6 in the film 4, and the stripe-shaped R organic EL layer 3R (thin film pattern) may be formed.
　図２は、上記薄膜パターン形成方法の第１の実施形態の第２ステップにおいて実施される本発明による蒸着マスクの第１実施形態の別の製造方法を示す断面図である。
　この製造方法によれば、先ず、図２（ａ）に示すように、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒの部分にエネルギー密度が１Ｊ／ｃｍ２～２０Ｊ／ｃｍ２のレーザ光Ｌ１を照射し、当該部分のフィルム４を一定深さまで掘り下げて穴部５を形成した後、同図（ｂ）に示すように、フィルム４の炭素と反応して該炭素を気化させる反応性ガス８の雰囲気下で、穴部５の底部に０．１Ｊ／ｃｍ２以下、望ましくは０．０６Ｊ／ｃｍ２以下までエネルギー密度を下げたレーザ光Ｌ２を照射し、穴部５の底部をゆっくりと加工して穴部５を貫通させ、同図（ｃ）に示すように開口パターン６を形成する。この場合、反応性ガス８としては、例えばオゾン（Ｏ３）ガスや、四フッ化メタン（ＣＦ４）とオゾンとの混合ガス等が使用できる。これにより、レーザ加工による飛散物がフィルム４の表面や開口パターン６内に付着した場合にも、反応性ガス８によるエッチングにより上記飛散物を除去して開口パターン６内のアノード電極２Ｒの表面を洗浄することができ、有機ＥＬ層３のアノード電極２Ｒ面への付着力を増強して有機ＥＬ層形成時の歩留まりを向上することができる。 FIG. 2 is a cross-sectional view showing another manufacturing method of the first embodiment of the vapor deposition mask according to the present invention, which is performed in the second step of the first embodiment of the thin film pattern forming method.
According to this manufacturing method, first, as shown in FIG. 2 (a), the laser beam L1 of the energy density in the portion of the anode electrode 2R of R corresponding on the TFT substrate 1 is 1J / cm 2 ~ 20J / cm 2 After irradiating and forming the hole 5 by digging the film 4 of the part to a certain depth, the reactive gas 8 reacts with the carbon of the film 4 to vaporize the carbon, as shown in FIG. Under the atmosphere, the bottom of the hole 5 is irradiated with laser light L2 having an energy density reduced to 0.1 J / cm 2 or less, preferably 0.06 J / cm 2 or less, and the bottom of the hole 5 is slowly processed. Then, the hole 5 is penetrated to form an opening pattern 6 as shown in FIG. In this case, as the reactive gas 8, for example, ozone (O 3 ) gas, a mixed gas of tetrafluoromethane (CF 4 ) and ozone, or the like can be used. As a result, even when the scattered material by the laser processing adheres to the surface of the film 4 or the opening pattern 6, the scattered material is removed by etching with the reactive gas 8 so that the surface of the anode electrode 2 </ b> R in the opening pattern 6 is removed. The organic EL layer 3 can be washed and the adhesion of the organic EL layer 3 to the surface of the anode electrode 2R can be enhanced to improve the yield when forming the organic EL layer.
　図３は、上記薄膜パターン形成方法の第１の実施形態の第２ステップにおいて実施される本発明による蒸着マスクの第１実施形態の更に別の製造方法を示す断面図である。
　この製造方法によれば、先ず、図３（ａ）に示すようにＴＦＴ基板１上の例えばＲ対応のアノード電極２Ｒの部分に、例えば１Ｊ／ｃｍ２～２０Ｊ／ｃｍ２のエネルギー密度のレーザ光Ｌ１を照射して当該部分のフィルム４を一定速度で一定深さまで掘り下げて穴部５を形成した後、レーザ光Ｌ１の照射を停止し、次いで、同図（ｂ）に示すようにフィルム４の炭素と反応して該炭素を気化させる、例えばオゾン（Ｏ３）ガスや、四フッ化炭素（ＣＦ４）とオゾンとの混合ガス等の反応性ガス８によりフィルム４をエッチングし、同図（ｃ）に示すようにフィルム４の穴部５を貫通させて一定形状の開口パターン６を形成するように実行される。 FIG. 3 is a cross-sectional view showing still another manufacturing method of the first embodiment of the vapor deposition mask according to the present invention, which is performed in the second step of the first embodiment of the thin film pattern forming method.
According to this manufacturing method, first, 3 to a portion of the anode electrode 2R e.g. R corresponding on the TFT substrate 1 (a), the example 1 J / cm 2 ~ laser beam energy density of 20 J / cm 2 After irradiating L1 and digging up the film 4 of the part to a certain depth at a constant speed to form the hole 5, the irradiation of the laser beam L1 is stopped, and then the film 4 as shown in FIG. The film 4 is etched by a reactive gas 8 such as ozone (O 3 ) gas or a mixed gas of carbon tetrafluoride (CF 4 ) and ozone, which reacts with carbon to vaporize the carbon. As shown in c), it is carried out so as to penetrate the hole 5 of the film 4 to form an opening pattern 6 having a fixed shape.
　この場合、反応性ガス８のフィルム４とアノード電極２Ｒ～２Ｂとの間のエッチング選択比を利用してアノード電極２Ｒ～２Ｂにダメージを与えることなくフィルム４のみを効率よくエッチングし、開口パターン６を形成することができる。さらに、反応性ガス８によるエッチングにより、開口パターン６内のアノード電極２Ｒ～２Ｂの表面を洗浄することができ、アノード電極２Ｒ～２Ｂに対する有機ＥＬ層の付着力を増強して有機ＥＬ層形成時の歩留まりを向上することができる。さらにまた、最初は、高いエネルギー密度のレーザ光Ｌ１により高速で穴部５を加工した後、エッチングにより穴部５の底部をゆっくり加工して穴部５を貫通させているので、加工時間を犠牲にせずに、下地層であるアノード電極２Ｒ～２Ｂに与えるダメージを抑制してフィルム４のみを効率よく加工することができる。 In this case, only the film 4 is efficiently etched using the etching selectivity between the film 4 of the reactive gas 8 and the anode electrodes 2R to 2B without damaging the anode electrodes 2R to 2B. Can be formed. Furthermore, the surface of the anode electrodes 2R to 2B in the opening pattern 6 can be cleaned by etching with the reactive gas 8, and the adhesion of the organic EL layer to the anode electrodes 2R to 2B can be enhanced to form the organic EL layer. The yield can be improved. Furthermore, at first, after processing the hole 5 at high speed with the laser beam L1 having a high energy density, the bottom of the hole 5 is slowly processed by etching to penetrate the hole 5, so that the processing time is sacrificed. Without damaging, it is possible to efficiently process only the film 4 while suppressing damage to the anode electrodes 2R to 2B as the underlayer.
　なお、フィルム４は、上記反応性ガス８に替えて酸素（Ｏ２）ガスや、四フッ化炭素（ＣＦ４）と酸素との混合ガス等をプラズマ化し、生成されたラジカルイオンによりエッチングしてもよい。 The film 4 is plasmatized with oxygen (O 2 ) gas or a mixed gas of carbon tetrafluoride (CF 4 ) and oxygen, etc. instead of the reactive gas 8 and is etched with the generated radical ions. Also good.
　このようにして製造される本発明による蒸着マスクの第１実施形態は、基板上に予め定められた薄膜パターンの形成領域に対応して、該薄膜パターンと形状寸法の同じ貫通する開口パターン６を形成した可視光を透過する樹脂製のフィルム４のみで備えて構成されたものである。 In the first embodiment of the vapor deposition mask according to the present invention thus manufactured, an opening pattern 6 having the same shape and dimension as the thin film pattern is formed corresponding to a predetermined thin film pattern formation region on the substrate. The resin film 4 is composed of only the resin film 4 that transmits visible light.
　第３ステップにおいては、図１（ｄ）に示すように、例えば真空蒸着装置を使用してＴＦＴ基板１のＲ対応のアノード電極２Ｒ上に蒸着マスク７の開口パターン６を介してＲ有機ＥＬ層３Ｒを蒸着形成する。このとき、Ｇ対応及びＢ対応のアノード電極２Ｇ，２Ｂに通電して各アノード電極２Ｇ，２Ｂに一定電圧を印加した状態で真空蒸着を行えば、フィルム状の蒸着マスク７がＧ対応及びＢ対応のアノード電極２Ｇ，２Ｂに静電吸着されて固定されるため、蒸着マスク７が動いて蒸着マスク７の開口パターン６とＴＦＴ基板１のＲ対応のアノード電極２Ｒとの位置ずれが生ずるおそれが無い。また、蒸着マスク７がＴＦＴ基板１面に密着して蒸着マスク７の下面とＴＦＴ基板１の上面との間に隙間が生じるおそれが無いため、該隙間に蒸着分子が回り込んで付着し薄膜パターンの形成精度を悪くするという問題も回避することができる。 In the third step, as shown in FIG. 1D, for example, an R organic EL layer is formed on the R corresponding anode electrode 2R of the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 7 using a vacuum vapor deposition apparatus. 3R is formed by vapor deposition. At this time, if the vacuum deposition is performed in a state where the anode electrodes 2G and 2B for G and B are energized and a constant voltage is applied to each of the anode electrodes 2G and 2B, the film-like deposition mask 7 is adapted for G and B. Since the deposition mask 7 moves and the opening pattern 6 of the deposition mask 7 and the R corresponding anode electrode 2R of the TFT substrate 1 are not displaced, there is no possibility that the anode electrode 2G, 2B is electrostatically attracted and fixed. . In addition, since there is no possibility that the vapor deposition mask 7 is in close contact with the surface of the TFT substrate 1 and a gap is formed between the lower surface of the vapor deposition mask 7 and the upper surface of the TFT substrate 1, the vapor deposition molecules wrap around and adhere to the gap. The problem of deteriorating the formation accuracy of the film can also be avoided.
　上記第３ステップにおいては、Ｒ有機ＥＬ層３Ｒを形成する前に、Ｒ対応のアノード電極２Ｒの不純物を除去するとよい。ここでいう不純物には、例えば上記第２ステップにおいてアブレーションされたフィルム４等の残渣が含まれる。このような不純物がＲ対応のアノード電極２Ｒの表面に付着した状態でＲ有機ＥＬ層３Ｒが蒸着されると、Ｒ対応のアノード電極２Ｒの電気抵抗が上昇し、Ｒ有機ＥＬ層３Ｒの駆動に障害が生じるおそれがある。また、このような不純物には有機ＥＬ層を腐食するものもあり、有機ＥＬ層の耐用年数を縮めるおそれがある。 In the third step, before the R organic EL layer 3R is formed, it is preferable to remove impurities from the anode electrode 2R corresponding to R. The impurities here include, for example, residues such as the film 4 ablated in the second step. When the R organic EL layer 3R is deposited with such impurities attached to the surface of the R-compatible anode electrode 2R, the electrical resistance of the R-compatible anode electrode 2R increases, and the R organic EL layer 3R is driven. Failure may occur. In addition, some of these impurities corrode the organic EL layer, which may shorten the useful life of the organic EL layer.
　このような不純物を除去するために、エッチングやレーザが使用される。エッチングを行う場合には、Ｏ２（酸素）、Ｏ２とＡｒ（アルゴン）との混合気、又はＯ２とＡｒとＣＦ４（四フッ化炭素）との混合気等をエッチングガスとして使用したドライエッチングにより不純物を除去するのが好ましい。また、レーザを使用する場合には、エネルギー密度が０．５Ｊ／ｃｍ２程度で波長が５３２ｎｍのグリーンレーザ，３５５ｎｍのＵＶレーザ，２６６ｎｍのＤＵＶレーザ等を使用することができる。この際、Ｏ２、Ｏ２とＡｒとの混合気、Ｏ２とＡｒとＣＦ４との混合気、又はＯ３（オゾン）等をアシストガスとして併用するのが好ましい。 In order to remove such impurities, etching or laser is used. In the case of performing etching, a mixed gas of O 2 (oxygen), O 2 and Ar (argon), or a mixed gas of O 2 , Ar and CF 4 (carbon tetrafluoride) was used as an etching gas. It is preferable to remove impurities by dry etching. When a laser is used, a green laser having an energy density of about 0.5 J / cm 2 and a wavelength of 532 nm, a 355 nm UV laser, a 266 nm DUV laser, or the like can be used. In this case, O 2, a mixed gas of O 2 and Ar, the gas mixture of O 2 and Ar and CF 4, or O 3 (ozone) is preferably used in combination as the assist gas and the like.
　さらに、不純物が除去されたＲ対応のアノード電極２Ｒ上に電極材料を蒸着するとよい。ここでいう電極材料とは、アノード電極を形成する材料を意味し、例えばＡｌ（アルミニウム）やＭｇ（マグネシウム）等が含まれる。電極材料は、スパッタリング、真空蒸着、及びイオンプレーティング等の方法により、フィルム４に形成された開口パターン６を介してＲ対応のアノード電極２Ｒの表面に蒸着される。 Furthermore, an electrode material may be deposited on the R-compatible anode electrode 2R from which impurities have been removed. An electrode material here means the material which forms an anode electrode, for example, Al (aluminum), Mg (magnesium), etc. are contained. The electrode material is deposited on the surface of the anode electrode 2R corresponding to R through the opening pattern 6 formed in the film 4 by a method such as sputtering, vacuum deposition, and ion plating.
　第４ステップにおいては、図１（ｅ）に示すように、蒸着マスク７の縁部を上方に持ち上げて蒸着マスク７をＴＦＴ基板１面から機械的に剥離する。これにより、Ｒ対応のアノード電極２Ｒ上にＲ有機ＥＬ層３Ｒが残りＲ有機ＥＬ層形成工程が終了する。この場合、蒸着マスク７の厚みが約１０μｍ～３０μｍであるのに対してＲ有機ＥＬ層３Ｒの厚みは１００ｎｍ程度であるので、蒸着マスク７の開口パターン６の側壁に付着するＲ有機ＥＬ層３Ｒの厚みは極薄いため蒸着マスク７を剥離する際に、蒸着マスク７とＲ対応のアノード電極２Ｒ上のＲ有機ＥＬ層３Ｒとが容易に分離する。したがって、蒸着マスク７を剥離する際にＲ対応のアノード電極２Ｒ上のＲ有機ＥＬ層３Ｒが剥離するおそれがない。なお、Ｇ対応及びＢ対応のアノード電極２Ｇ，２Ｂに電圧を印加させて蒸着マスク７をＴＦＴ基板１面に静電吸着させた場合には、蒸着マスク７を剥離する際に、各アノード電極２Ｇ，２Ｂの印加電圧をオフするか、又は逆極性の電圧を印加してやるとよい。これにより、蒸着マスク７の剥離を容易に行うことができる。また、粘着剤を使用してフィルム４をＴＦＴ基板１面に貼り付けた場合には、上記粘着剤の粘着力よりも大きな力を蒸着マスク７に加えて機械的に剥離するとよい。さらに、上記粘着剤が紫外線照射により硬化するものであるときには、紫外線を照射して粘着剤を硬化させ、蒸着マスク７とＴＦＴ基板１面との界面の粘着力を低下させてから蒸着マスク７を剥離するとよい。 In the fourth step, as shown in FIG. 1E, the edge of the vapor deposition mask 7 is lifted upward to mechanically peel the vapor deposition mask 7 from the surface of the TFT substrate 1. As a result, the R organic EL layer 3R remains on the R corresponding anode electrode 2R, and the R organic EL layer forming step is completed. In this case, the thickness of the vapor deposition mask 7 is about 10 μm to 30 μm, whereas the thickness of the R organic EL layer 3R is about 100 nm. Therefore, the R organic EL layer 3R attached to the sidewall of the opening pattern 6 of the vapor deposition mask 7 Since the thickness of is very thin, when the vapor deposition mask 7 is peeled off, the vapor deposition mask 7 and the R organic EL layer 3R on the anode electrode 2R corresponding to R are easily separated. Therefore, there is no possibility that the R organic EL layer 3R on the R-compatible anode electrode 2R is peeled off when the vapor deposition mask 7 is peeled off. In addition, when a voltage is applied to the anode electrodes 2G and 2B for G and B and the deposition mask 7 is electrostatically adsorbed on the surface of the TFT substrate 1, each anode electrode 2G is removed when the deposition mask 7 is peeled off. , 2B may be turned off or a reverse polarity voltage may be applied. Thereby, peeling of the vapor deposition mask 7 can be performed easily. Further, when the film 4 is attached to the surface of the TFT substrate 1 using an adhesive, a force larger than the adhesive force of the adhesive may be applied to the vapor deposition mask 7 and mechanically peeled off. Further, when the pressure-sensitive adhesive is cured by irradiation with ultraviolet rays, the pressure-sensitive adhesive is cured by irradiating with ultraviolet rays to reduce the adhesive force at the interface between the vapor deposition mask 7 and the TFT substrate 1 surface. It is good to peel.
　以降、上述と同様にして、Ｇ対応及びＢ対応のアノード電極２Ｇ，２Ｂ上に対応色の有機ＥＬ層３Ｇ，３Ｂを夫々形成する。その後、ＴＦＴ基板１上にＩＴＯ(Indium Tin Oxide)の透明導電膜を形成し、さらにその上に透明な保護基板を接着して有機ＥＬ表示装置が形成される。 Thereafter, in the same manner as described above, organic EL layers 3G and 3B of corresponding colors are formed on the anode electrodes 2G and 2B for G and B, respectively. Thereafter, a transparent conductive film of ITO (Indium Tin Oxide) is formed on the TFT substrate 1, and a transparent protective substrate is further bonded thereon to form an organic EL display device.
　なお、上記薄膜パターン形成方法の第１の実施形態においては、フィルム４がシート状の形態を成すものである場合について説明したが、本発明はこれに限られず、紫外線レーザアブレーションが可能な材料であれば、液状のものであってもよい。この場合は、フィルム４は、液状材料をＴＦＴ基板１面にスピンコート又はディップコートした後、それを乾燥させて形成される。 In the first embodiment of the thin film pattern forming method, the case where the film 4 is in the form of a sheet has been described. However, the present invention is not limited to this and is a material capable of ultraviolet laser ablation. If it exists, it may be liquid. In this case, the film 4 is formed by spin-coating or dip-coating a liquid material on the surface of the TFT substrate 1 and then drying it.
　また、上記薄膜パターン形成方法の第１の実施形態においては、第３ステップの有機ＥＬ層３Ｒの形成時に、有機ＥＬ層３Ｒ上にさらに透明電極層を形成してもよい。この場合、フィルム４が液状のものであるときには、透明電極層がバリア層として機能し、液状のフィルム４によって有機ＥＬ層３Ｒが溶解されるのを防止することができる。 In the first embodiment of the thin film pattern forming method, a transparent electrode layer may be further formed on the organic EL layer 3R when the organic EL layer 3R is formed in the third step. In this case, when the film 4 is liquid, the transparent electrode layer functions as a barrier layer, and it is possible to prevent the organic EL layer 3R from being dissolved by the liquid film 4.
　図４～図８は本発明による蒸着マスクの第２実施形態を使用して行う薄膜パターン形成方法の第２の実施形態を示す工程図である。ここでは、前述と同様に、薄膜パターンが有機ＥＬ層であり、上記第２の実施形態により有機ＥＬ表示装置を製造する方法について説明する。この有機ＥＬ表示装置の製造方法は、ＴＦＴ基板上のアノード電極上に対応色の有機ＥＬ層を形成して有機ＥＬ表示装置を製造する方法であり、赤色（Ｒ）有機ＥＬ層形成工程と、緑色（Ｇ）有機ＥＬ層形成工程と、青色（Ｂ）有機ＥＬ層形成工程と、カソード電極形成工程とからなる。 FIGS. 4 to 8 are process diagrams showing a second embodiment of a thin film pattern forming method performed using the second embodiment of the vapor deposition mask according to the present invention. Here, as described above, a method of manufacturing an organic EL display device according to the second embodiment will be described in which the thin film pattern is an organic EL layer. This organic EL display device manufacturing method is a method of manufacturing an organic EL display device by forming an organic EL layer of a corresponding color on an anode electrode on a TFT substrate, and a red (R) organic EL layer forming step, It consists of a green (G) organic EL layer forming step, a blue (B) organic EL layer forming step, and a cathode electrode forming step.
　図４は、Ｒ有機ＥＬ層形成工程を示す断面説明図である。このＲ有機ＥＬ層形成工程は、有機材料を真空中で加熱してＴＦＴ基板１のＲ対応のアノード電極２Ｒ上にＲ有機ＥＬ層３Ｒを蒸着形成する工程であり、磁性材料からなる薄板に、Ｒ有機ＥＬ層３Ｒのパターンよりも形状寸法の大きい開口部９を形成した金属部材１０に可視光を透過する樹脂製のフィルム４を保持してマスク用部材１１を形成する第１ステップ（同図（ａ）参照）と、内部にチャック手段としての静磁界発生手段１２を備えた磁気チャックステージ１３上にＴＦＴ基板１を載置する第２ステップ（同図（ｂ）参照）と、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒが金属部材１０の上記開口部９内に位置するように位置合わせしてマスク用部材１１をＴＦＴ基板１上に載置する第３ステップ（同図（ｃ）参照）と、上記静磁界発生手段１２の静磁界により金属部材１０をＴＦＴ基板１上に吸着し、フィルム４をＴＦＴ基板１面に密着させる第４ステップ（同図（ｄ）参照）と、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒに対応したフィルム４部分にレーザ光Ｌを照射し、当該部分のフィルム４にＲ有機ＥＬ層３Ｒのパターンと形状寸法の同じ開口パターン６を設けて本発明による蒸着マスクの第２実施形態（以下「蒸着マスク１４」という）を形成する第５ステップ（同図（ｅ）参照）と、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒ上に蒸着マスク１４の開口パターン６を介してＲ有機ＥＬ層３Ｒを蒸着形成する第６ステップ（同図（ｆ）参照）と、上記蒸着マスク１４を同図に示す矢印＋Ｚ方向に持ち上げて剥離する第７ステップ（同図（ｇ）参照）と、を実行するものである。 FIG. 4 is a cross-sectional explanatory view showing the R organic EL layer forming step. This R organic EL layer forming step is a step in which an organic material is heated in a vacuum to form an R organic EL layer 3R on the R-compatible anode electrode 2R of the TFT substrate 1, and is formed on a thin plate made of a magnetic material. A first step of forming a mask member 11 by holding a resin film 4 that transmits visible light on a metal member 10 in which an opening 9 having a larger dimension than the pattern of the R organic EL layer 3R is formed. (See (a)), a second step of placing the TFT substrate 1 on a magnetic chuck stage 13 provided with a static magnetic field generating means 12 as a chuck means (see (b) in the figure), and the TFT substrate 1 The third step of positioning the mask member 11 on the TFT substrate 1 so that the upper R-compatible anode electrode 2R is positioned in the opening 9 of the metal member 10 (see FIG. 3C). ) And the above static magnetism A fourth step (see FIG. 4D) in which the metal member 10 is adsorbed on the TFT substrate 1 by the static magnetic field of the generating means 12 and the film 4 is in close contact with the surface of the TFT substrate 1; The second embodiment of the vapor deposition mask according to the present invention is formed by irradiating the film 4 corresponding to the anode electrode 2R with the laser beam L and providing the opening 4 with the same shape and dimension as the pattern of the R organic EL layer 3R on the film 4 of the portion. A fifth step (see (e) in the figure) for forming a form (hereinafter referred to as “evaporation mask 14”) and an R pattern corresponding to the R electrode on the TFT substrate 1 through the opening pattern 6 of the deposition mask 14 R A sixth step (see (f) in the figure) for forming the organic EL layer 3R by vapor deposition, and a seventh step (see (g) in the same figure) for lifting the vapor deposition mask 14 in the arrow + Z direction shown in the figure and peeling it off. The It is intended to row.
　より詳細には、先ず、第１ステップにおいては、例えばニッケル、ニッケル合金、インバー又はインバー合金等の磁性材料からなる１５μｍ～５０μｍ程度の厚みの金属部材１０に、ＴＦＴ基板１の複数列のＲ対応のアノード電極２Ｒの配列ピッチと同ピッチで、図５（ａ）に示すように１列に並んだ複数のＲ対応のアノード電極２Ｒが内部に完全に収まる十分な大きさの、複数列の細長状の開口部９をエッチングや打ちぬき等により形成した後、同図（ｂ）に同図（ａ）のＡ－Ａ線断面で示すように金属部材１０の一面に例えば粘着剤を介して例えば厚みが１０μｍ～３０μｍ程度のポリエチレンテレフタレート（ＰＥＴ）やポリイミド等の紫外線レーザアブレーションが可能なフィルム４を貼り付け、次いで、同図（ｃ）に一部拡大して示すように金属部材１０側から上記フィルム４を例えばドライエッチングし、上記開口部９に対応した部分のフィルム４の厚みを例えば数μｍ程度まで薄くしてマスク用部材１１を形成する。これにより、微細な開口パターンも精度よく形成することが可能となる。なお、フィルム４のエッチングは、金属部材１０とは反対側から行ってもよく、又は両側から行ってもよい。また、フィルム４のエッチングは、ドライエッチングではなく、ウエットエッチングであってもよい。さらに、上記金属部材１０は、フィルム４の一面の上記開口部９に対応した部分の外側領域にメッキ形成されたものであってもよい。 More specifically, first, in the first step, a plurality of rows R of the TFT substrate 1 are applied to a metal member 10 having a thickness of about 15 μm to 50 μm made of a magnetic material such as nickel, nickel alloy, invar or invar alloy. A plurality of elongated strips having a size sufficient to accommodate a plurality of R-compatible anode electrodes 2R arranged in a single row as shown in FIG. 5A at the same pitch as the arrangement pitch of the anode electrodes 2R. After the opening 9 is formed by etching, punching, or the like, for example, an adhesive is provided on one surface of the metal member 10 as shown in FIG. A film 4 capable of ultraviolet laser ablation such as polyethylene terephthalate (PET) or polyimide having a thickness of about 10 μm to 30 μm is pasted, and then partially enlarged in FIG. And the film 4, for example, dry etching the metal member 10 side Suyo, a mask member 11 is thinned to a few μm, for example, about the thickness of the film 4 of the portion corresponding to the opening 9. This makes it possible to form a fine opening pattern with high accuracy. The etching of the film 4 may be performed from the side opposite to the metal member 10 or from both sides. Further, the etching of the film 4 may be wet etching instead of dry etching. Further, the metal member 10 may be formed by plating in an outer region of a portion corresponding to the opening 9 on one surface of the film 4.
　次に、第２ステップにおいては、図４（ｂ）に示すように、内部に静磁界発生手段１２として例えば永久磁石を備えた磁気チャックステージ１３上にＴＦＴ基板１のアノード電極２Ｒ，２Ｇ，２Ｂを形成した面を上側にして載置する。この場合、上記磁気チャックステージ１３は、例えば吸着面が平滑に形成されたものである。なお、上記静磁界発生手段１２は、図示省略の昇降手段により昇降するようになっており、上記第２ステップにおいては、静磁界発生手段１２は、磁気チャックステージ１３の底部に下降している。 Next, in the second step, as shown in FIG. 4B, the anode electrodes 2R, 2G, 2B of the TFT substrate 1 are placed on a magnetic chuck stage 13 provided with, for example, a permanent magnet as the static magnetic field generating means 12 inside. It is placed with the surface on which is formed facing upward. In this case, the magnetic chuck stage 13 has, for example, a smooth attracting surface. The static magnetic field generating means 12 is moved up and down by a lifting means (not shown). In the second step, the static magnetic field generating means 12 is lowered to the bottom of the magnetic chuck stage 13.
　続いて、第３ステップにおいては、図４（ｃ）に示すように、マスク用部材１１のフィルム４側をＴＦＴ基板１側としてＴＦＴ基板１上に載置した後、例えば顕微鏡下でＴＦＴ基板１のＲ対応のアノード電極２Ｒと金属部材１０の開口部９とを観察しながら、複数のＲ対応のアノード電極２Ｒが金属部材１０の開口部９内に完全に収まるようにマスク用部材１１を磁気チャックステージ１３の上面に平行な面内で２次元方向に移動及び回転して位置合わせする。この場合、静磁界発生手段１２は、磁気チャックステージ１３の底部に下降しているので、金属部材１０に作用する静磁界強度は小さい。したがって、マスク用部材１１は、ＴＦＴ基板１面上を自由に移動することができる。なお、磁気チャックステージ１３の上面にＴＦＴ基板１を位置決めして載置可能に凹部を形成し、該凹部の外側に位置決めピンを設けると共に、該位置決めピンに対応して金属部材１０に位置決め孔を形成すれば、上記位置決めピンに上記位置決め孔を嵌合するだけでＴＦＴ基板１とマスク用部材１１との位置合わせをすることができる。 Subsequently, in the third step, as shown in FIG. 4C, after the film member 4 side of the mask member 11 is placed on the TFT substrate 1 with the TFT substrate 1 side, for example, under the microscope, the TFT substrate 1 While observing the R-compatible anode electrode 2 </ b> R and the opening 9 of the metal member 10, the mask member 11 is magnetically arranged so that the plurality of R-compatible anode electrodes 2 </ b> R completely fit within the opening 9 of the metal member 10. Positioning is performed by moving and rotating in a two-dimensional direction within a plane parallel to the upper surface of the chuck stage 13. In this case, since the static magnetic field generating means 12 is lowered to the bottom of the magnetic chuck stage 13, the static magnetic field strength acting on the metal member 10 is small. Therefore, the mask member 11 can freely move on the surface of the TFT substrate 1. The TFT substrate 1 is positioned on the top surface of the magnetic chuck stage 13 to form a recess so that the TFT substrate 1 can be placed. A positioning pin is provided outside the recess, and a positioning hole is formed in the metal member 10 corresponding to the positioning pin. If formed, the TFT substrate 1 and the mask member 11 can be aligned only by fitting the positioning hole into the positioning pin.
　次いで、第４ステップにおいては、図４（ｄ）に示すように、静磁界発生手段１２を磁気チャックステージ１３の上部まで上昇させて静磁界を金属部材１０に作用させ、金属部材１０をＴＦＴ基板１側に吸着してフィルム４をＴＦＴ基板１の上面に密着させる。 Next, in the fourth step, as shown in FIG. 4D, the static magnetic field generating means 12 is raised to the top of the magnetic chuck stage 13 to cause the static magnetic field to act on the metal member 10, and the metal member 10 is moved to the TFT substrate. The film 4 is adhered to the upper surface of the TFT substrate 1 by adsorbing to the 1 side.
　次に、第５ステップにおいては、図４（ｅ）に示すように、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒ上にレーザ光Ｌを照射し、当該アノード電極２Ｒ上のフィルム４にＲ対応のアノード電極２Ｒと形状寸法が略同じ開口パターン６を設けて本発明による蒸着マスク１４（第２実施形態）を形成する。ここで使用するレーザは、波長が４００ｎｍ以下のエキシマレーザであり、例えばＫｒＦ２４８ｎｍのレーザである。このような紫外線のレーザ光Ｌの光エネルギーにより、ポリエチレンテレフタレート（ＰＥＴ）やポリイミド等のフィルム４の炭素結合が一瞬のうちに破壊されて除去されるため、残渣の発生を抑制したクリーンな穴あけ加工を行うことができる。この場合、レーザ光Ｌの照射による熱的過程を使用しないため、レーザ光Ｌの光束断面と形状寸法が略同じ貫通パターンを加工することができ、縮小結像手段を用いれば、数μｍ程度の開口パターン６を有する蒸着マスク１４の形成も可能である。したがって、従来よりも増してより高精細な薄膜パターンを形成することができる。 Next, in the fifth step, as shown in FIG. 4 (e), the R-compatible anode electrode 2R on the TFT substrate 1 is irradiated with the laser light L, and the film 4 on the anode electrode 2R is R-compatible. An opening pattern 6 having substantially the same shape and dimension as the anode electrode 2R is provided to form a vapor deposition mask 14 (second embodiment) according to the present invention. The laser used here is an excimer laser having a wavelength of 400 nm or less, for example, a KrF248 nm laser. Because of the light energy of the ultraviolet laser beam L, the carbon bonds of the film 4 such as polyethylene terephthalate (PET) or polyimide are broken and removed in an instant, so a clean drilling process that suppresses the generation of residues It can be performed. In this case, since the thermal process by the irradiation of the laser beam L is not used, a penetration pattern having substantially the same cross-sectional shape and shape as the beam of the laser beam L can be processed. It is also possible to form the vapor deposition mask 14 having the opening pattern 6. Therefore, it is possible to form a thin film pattern with higher definition than before.
　図９は、上記第５ステップにおいて使用するレーザ加工装置の一構成例を示す正面図である。
　このレーザ加工装置は、ＴＦＴ基板１を同図に矢印Ｘで示す方向に一定速度で搬送しながら、ＴＦＴ基板１上のマスク用部材１１にレーザ光Ｌを照射してアノード電極２Ｒ～２Ｂ上に有機ＥＬ層３Ｒ～３Ｂのパターンと形状寸法が略同じ開口パターン６を設けて蒸着マスク１４を形成するためのものであり、搬送手段１５と、レーザ光学ユニット１６と、撮像手段１７と、アライメント手段１８と、制御手段１９と、を備えて構成されている。 FIG. 9 is a front view showing a configuration example of the laser processing apparatus used in the fifth step.
This laser processing apparatus irradiates the mask member 11 on the TFT substrate 1 with the laser light L while conveying the TFT substrate 1 at a constant speed in the direction indicated by the arrow X in FIG. This is for forming the vapor deposition mask 14 by providing the opening pattern 6 having substantially the same shape and dimensions as the patterns of the organic EL layers 3R to 3B. The transport means 15, the laser optical unit 16, the imaging means 17, and the alignment means 18 and a control means 19.
　上記搬送手段１５は、上面に複数のエア噴出孔及びエア吸引孔を形成した搬送ステージ２０上に一体化されたＴＦＴ基板１と磁気チャックステージ１３とを載置し、エアの噴出力と吸引力とをバランスさせてＴＦＴ基板１及び磁気チャックステージ１３を上記搬送ステージ２０上に一定量だけ浮上させた状態で、磁気チャックステージ１３の矢印Ｘ方向に平行な縁部を図示省略の搬送機構により保持して搬送するものである。 The transfer means 15 mounts the TFT substrate 1 and the magnetic chuck stage 13 integrated on a transfer stage 20 having a plurality of air ejection holes and air suction holes formed on the upper surface thereof. And the edge parallel to the arrow X direction of the magnetic chuck stage 13 is held by a transport mechanism (not shown) while the TFT substrate 1 and the magnetic chuck stage 13 are floated on the transport stage 20 by a certain amount. And transport it.
　上記搬送手段１５の上方には、レーザ光学ユニット１６が設けられている。このレーザ光学ユニット１６は、紫外線のレーザ光ＬをＴＦＴ基板１上の選択されたアノード電極２Ｒ～２Ｂ上に照射させるものであり、例えばＫｒＦ２４８ｎｍのレーザ光Ｌを放射するエキシマレーザ２１と、レーザ光Ｌの光束径を拡大すると共に、強度分布を均一化して平行光を後述のフォトマスク２３に照射させるカップリング光学ユニット２２と、上記搬送ステージ２０の上面に対向して配置され、搬送ステージ２０の上面に平行な面内にて、矢印Ｘ方向と交差する方向に複数の開口２４（図１０参照）を形成したフォトマスク２３とを備えて構成されている。 A laser optical unit 16 is provided above the conveying means 15. The laser optical unit 16 irradiates selected laser electrodes L on the TFT substrate 1 with ultraviolet laser light L. For example, an excimer laser 21 that emits laser light L of KrF 248 nm, and laser light A coupling optical unit 22 for enlarging the L beam diameter and making the intensity distribution uniform to irradiate parallel light onto a photomask 23 (described later) and an upper surface of the transfer stage 20 are disposed opposite to the transfer stage 20. A photomask 23 having a plurality of openings 24 (see FIG. 10) formed in a direction crossing the arrow X direction in a plane parallel to the upper surface is provided.
　ここで、上記フォトマスク２３について詳細に説明すると、フォトマスク２３は、例えば図１０に示すように、透明な基板２５の一面に設けたクロム（Ｃｒ）等の遮光膜２６に、ＴＦＴ基板１の矢印Ｘ方向と交差する方向のアノード電極２Ｒ～２Ｂの配列ピッチＰの３倍の配列ピッチ３Ｐで一列に並べて開口２４を形成し、他面には、各開口２４の中心と中心軸を合致されて複数のマイクロレンズ２７を形成したものであり、マイクロレンズ２７により開口２４をＴＦＴ基板１上に縮小投影するようになっている。この場合、開口２４の大きさは、マイクロレンズ２７の縮小倍率をＭとすると、有機ＥＬ層３Ｒ～３ＢのパターンサイズのＭ倍の大きさに形成される。なお、同図（ａ）において、斜線を付した領域は、レーザ光Ｌが照射される領域である。 Here, the photomask 23 will be described in detail. For example, as shown in FIG. 10, the photomask 23 is formed on a light shielding film 26 such as chromium (Cr) provided on one surface of a transparent substrate 25 with the TFT substrate 1. The openings 24 are formed in a row at an arrangement pitch 3P that is three times the arrangement pitch P of the anode electrodes 2R to 2B in the direction crossing the arrow X direction, and the center and the central axis of each opening 24 are matched on the other surface. A plurality of microlenses 27 are formed, and the opening 24 is reduced and projected onto the TFT substrate 1 by the microlens 27. In this case, the size of the opening 24 is M times the pattern size of the organic EL layers 3R to 3B, where M is the reduction magnification of the microlens 27. In addition, in the figure (a), the area | region which attached the oblique line is an area | region to which the laser beam L is irradiated.
　また、上記複数の開口２４の中心に対して矢印Ｘと反対方向に一定距離だけ離れた位置に、矢印Ｘ方向と交差する長手中心軸を有する細長状の覗き窓２８が形成されている。この覗き窓２８は、フォトマスク２３の下側を通過するＴＦＴ基板１の表面をフォトマスク２３の上方から後述の撮像手段１７により撮影可能にするためのものであり、覗き窓２８内には、いずれかの開口２４の中心と長手中心軸を合致させて矢印Ｘ方向に平行な細線状の少なくとも一本のアライメントマーク２９（ここでは、一本のアライメントマークで示す）が設けられている。 Also, an elongated viewing window 28 having a longitudinal central axis intersecting the arrow X direction is formed at a position away from the center of the plurality of openings 24 by a certain distance in the direction opposite to the arrow X. This viewing window 28 is for enabling the surface of the TFT substrate 1 passing under the photomask 23 to be photographed by the imaging means 17 described later from above the photomask 23. In the viewing window 28, There is provided at least one alignment mark 29 (in this case, indicated by one alignment mark) in the form of a thin line parallel to the arrow X direction so that the center of one of the openings 24 coincides with the longitudinal central axis.
　上記搬送手段１５の上方には、撮像手段１７が設けられている。この撮像手段１７は、上記フォトマスク２３の覗き窓２８を通してＴＦＴ基板１の表面を撮影するものであり、矢印Ｘ方向と交差する方向に複数の受光エレメントを一直線に並べて有するラインカメラである。そして、複数の受光エレメントの並び方向の中心軸が上記フォトマスク２３の覗き窓２８の長手中心軸と合致するように配設されている。さらに、撮像手段１７の撮影領域をＴＦＴ基板１の上方側から照明可能に図示省略の照明手段が設けられている。なお、図９において符号３０は、撮像系の光路を折り曲げる反射ミラーである。 The imaging means 17 is provided above the conveying means 15. This imaging means 17 is for photographing the surface of the TFT substrate 1 through the viewing window 28 of the photomask 23 and is a line camera having a plurality of light receiving elements arranged in a straight line in a direction crossing the arrow X direction. The central axis in the direction in which the plurality of light receiving elements are arranged is arranged to coincide with the longitudinal central axis of the viewing window 28 of the photomask 23. Further, illumination means (not shown) is provided so that the imaging region of the imaging means 17 can be illuminated from above the TFT substrate 1. In FIG. 9, reference numeral 30 denotes a reflection mirror that bends the optical path of the imaging system.
　上記フォトマスク２３を搬送ステージ２０の上面に平行な面内にて、矢印Ｘと交差する方向に移動可能にアライメント手段１８が設けられている。このアライメント手段１８は、フォトマスク２３を移動中のＴＦＴ基板１に対して位置合わせするものであり、電磁アクチュエータやモータ等を含んで構成された搬送機構によりフォトマスク２３を矢印Ｘと交差する方向に移動させることができるようになっている。 Alignment means 18 is provided so that the photomask 23 can be moved in a direction crossing the arrow X in a plane parallel to the upper surface of the transfer stage 20. The alignment means 18 aligns the photomask 23 with respect to the moving TFT substrate 1, and a direction in which the photomask 23 intersects the arrow X by a transport mechanism including an electromagnetic actuator, a motor, and the like. It can be moved to.
　上記搬送手段１５と、エキシマレーザ２１と、撮像手段１７と、アライメント手段１８とに電気的に接続して制御手段１９が設けられている。この制御手段１９は、搬送手段１５を制御してＴＦＴ基板１を矢印Ｘ方向に一定速度で搬送させ、エキシマレーザ２１を一定間隔で発光させるように制御し、撮像手段１７から入力する画像を処理して、ＴＦＴ基板１に予め設定された基準位置を検出すると共に、該基準位置とフォトマスク２３のアライメントマーク２９との間の水平距離を演算し、該水平距離が予め定められた距離となるようにアライメント手段１８を制御してフォトマスク２３を移動させるものである。 A control means 19 is provided in electrical connection with the transport means 15, the excimer laser 21, the imaging means 17, and the alignment means 18. The control unit 19 controls the transport unit 15 to transport the TFT substrate 1 at a constant speed in the direction of the arrow X, and controls the excimer laser 21 to emit light at regular intervals, and processes an image input from the imaging unit 17. Then, a reference position preset on the TFT substrate 1 is detected, and a horizontal distance between the reference position and the alignment mark 29 of the photomask 23 is calculated, and the horizontal distance becomes a predetermined distance. Thus, the alignment means 18 is controlled to move the photomask 23.
　このように構成されたレーザ加工装置を使用して、上記第５ステップは次のようにして実行される。
　先ず、搬送手段１５の搬送ステージ２０上面に磁気チャックステージ１３と一体化されたＴＦＴ基板１を、金属部材１０の開口部９の長軸が矢印Ｘ方向と平行となるように位置決めして載置する。次に、搬送手段１５は、磁気チャックステージ１３とＴＦＴ基板１とを一体的に搬送ステージ２０上に一定量だけ浮上させた状態で制御手段１９により制御されて矢印Ｘ方向に一定速度で搬送を開始する。 Using the thus configured laser processing apparatus, the fifth step is executed as follows.
First, the TFT substrate 1 integrated with the magnetic chuck stage 13 is positioned and placed on the upper surface of the transfer stage 20 of the transfer means 15 so that the long axis of the opening 9 of the metal member 10 is parallel to the arrow X direction. To do. Next, the transport unit 15 is controlled by the control unit 19 in a state where the magnetic chuck stage 13 and the TFT substrate 1 are integrally floated on the transport stage 20 and transported at a constant speed in the arrow X direction. Start.
　ＴＦＴ基板１が搬送されて、フォトマスク２３の下側に達し、フォトマスク２３の覗き窓２８を通して撮像手段１７によりＴＦＴ基板１に予め形成された矢印Ｘ方向と交差する例えばアノード電極２Ｒ～２Ｂ或いは所定の箇所に設けたラインパターン等が検出されると、該アノード電極２Ｒ～２Ｂ等が検出された時のＴＦＴ基板１の位置を基準にして制御手段１９によりＴＦＴ基板１の移動距離が演算される。そして、該移動距離が予め設定して保存された移動距離の目標値に合致し、ＴＦＴ基板１のＲ対応のアノード電極２Ｒがフォトマスク２３の開口２４の真下に達すると制御手段１９に制御されてエキシマレーザ２１がパルス発光する。 The TFT substrate 1 is transported, reaches the lower side of the photomask 23, passes through the viewing window 28 of the photomask 23, and intersects with the arrow X direction previously formed on the TFT substrate 1 by the imaging means 17, for example, the anode electrodes 2R to 2B or When a line pattern or the like provided at a predetermined location is detected, the moving distance of the TFT substrate 1 is calculated by the control means 19 based on the position of the TFT substrate 1 when the anode electrodes 2R to 2B are detected. The Then, when the movement distance matches a preset target value of the movement distance stored and the anode electrode 2R corresponding to R of the TFT substrate 1 reaches just below the opening 24 of the photomask 23, the control means 19 controls the movement distance. The excimer laser 21 emits pulses.
　一方、ＴＦＴ基板１の移動中は、ＴＦＴ基板１に予め形成された矢印Ｘ方向に平行な例えば複数のゲート線のうち、予め選択されたアライメントの基準となるゲート線の縁部を撮像手段１７により検出し、同時に検出したフォトマスク２３のアライメントマーク２９との間の水平距離を制御手段１９により演算し、該距離が予め設定して保存されたアライメントの目標値と合致するようにアライメント手段１８を制御してフォトマスク２３を矢印Ｘと交差する方向に移動させる。これにより、矢印Ｘと交差する方向に振れながら移動するＴＦＴ基板１にフォトマスク２３を追従させて位置合わせすることができる。 On the other hand, during the movement of the TFT substrate 1, the edge of the gate line serving as a reference for the pre-selected alignment among a plurality of gate lines, for example, parallel to the direction of the arrow X formed in advance on the TFT substrate 1 is imaged. The horizontal distance between the photomask 23 and the alignment mark 29 of the photomask 23 detected at the same time is calculated by the control means 19, and the alignment means 18 is set so that the distance matches a preset target value stored. To move the photomask 23 in the direction intersecting the arrow X. Thereby, the photomask 23 can be made to follow and align with the TFT substrate 1 which moves while swinging in the direction intersecting the arrow X.
　上述したように、ＴＦＴ基板１のＲ対応のアノード電極２Ｒがフォトマスク２３の開口２４の真下に達するとエキシマレーザ２１が発光し、レーザ光Ｌがフォトマスク２３の照射領域に照射される。さらに、フォトマスク２３の開口２４を通過したレーザ光Ｌは、マイクロレンズ２７によりＴＦＴ基板１のＲ対応のアノード電極２Ｒ上に集光される。そして、該アノード電極２Ｒ上のフィルム４がレーザ光Ｌによってアブレーションされて除去され、開口パターン６が形成される。以後、搬送方向後続のＲ対応のアノード電極２Ｒがフォトマスク２３の開口２４の真下に達する毎にエキシマレーザ２１が発光し、アノード電極２Ｒ上のフィルム４がレーザ光Ｌによって除去され、アノード電極２Ｒ上に開口パターン６を設けた蒸着マスク１４が形成される。なお、エキシマレーザ２１を連続発光させ、レーザ光Ｌの出力光軸側にシャッタを設けてＲ対応のアノード電極２Ｒがフォトマスク２３の開口２４の真下に達したときにシャッタを開くようにしてもよい。 As described above, when the anode electrode 2R corresponding to R of the TFT substrate 1 reaches just below the opening 24 of the photomask 23, the excimer laser 21 emits light, and the irradiation region of the photomask 23 is irradiated with the laser light L. Further, the laser light L that has passed through the opening 24 of the photomask 23 is condensed on the anode electrode 2 </ b> R corresponding to R of the TFT substrate 1 by the microlens 27. Then, the film 4 on the anode electrode 2R is ablated and removed by the laser light L, and an opening pattern 6 is formed. Thereafter, every time the anode electrode 2R corresponding to R following in the transport direction reaches directly below the opening 24 of the photomask 23, the excimer laser 21 emits light, the film 4 on the anode electrode 2R is removed by the laser light L, and the anode electrode 2R A vapor deposition mask 14 having an opening pattern 6 provided thereon is formed. Note that the excimer laser 21 emits light continuously, and a shutter is provided on the output optical axis side of the laser light L so that the shutter is opened when the R-compatible anode electrode 2R reaches just below the opening 24 of the photomask 23. Good.
　なお、以上の説明においては、フォトマスク２３に複数の開口２４が１列に並べて設けられている場合について述べたが、上記複数の開口２４を矢印Ｘ方向に、同方向の画素ピッチの整数倍のピッチで複数列設けてもよい。この場合、Ｒ対応のアノード電極２Ｒ上のフィルム４が複数回のレーザ照射により除去されることになる。 In the above description, the case where the photomask 23 is provided with a plurality of openings 24 arranged in a line has been described. However, the plurality of openings 24 is an integer multiple of the pixel pitch in the same direction in the arrow X direction. A plurality of rows may be provided at the pitch. In this case, the film 4 on the anode electrode 2R corresponding to R is removed by multiple laser irradiations.
　また、以上の説明においては、複数の開口２４に対応してマイクロレンズ２７が設けられている場合について述べたが、複数の開口２４に跨って長軸を有するシリンドリカルレンズであってもよい。この場合、開口２４は、上記複数の開口２４を連結した一つのストライプ状の開口として形成されるとよい。これにより、光束断面が細長状のレーザ光Ｌを生成してフィルム４にストライプ状の開口パターン６を形成することができる。なお、この場合は、ＴＦＴ基板１は、マスク用部材１１の開口９の長軸が矢印Ｘと交差するように搬送ステージ２０上に載置されて搬送される。そして、複数のＲ対応のアノード電極２Ｒが上記ストライプ状の開口２４の真下に達する毎に、細長状のレーザ光Ｌを照射することにより、上記ストライプ状の開口パターン６を複数のＲ対応のアノード電極２Ｒを跨って形成することができる。その結果、複数のＲ対応のアノード電極２Ｒを跨って、その上にストライプ状のＲ有機ＥＬ層３Ｒ（薄膜パターン）を形成することができる。 In the above description, the case where the microlenses 27 are provided corresponding to the plurality of openings 24 has been described. However, a cylindrical lens having a long axis across the plurality of openings 24 may be used. In this case, the opening 24 may be formed as one stripe-like opening connecting the plurality of openings 24. As a result, a laser beam L having an elongated light beam cross section can be generated to form a stripe-shaped opening pattern 6 in the film 4. In this case, the TFT substrate 1 is placed and transported on the transport stage 20 so that the long axis of the opening 9 of the mask member 11 intersects the arrow X. Each time the plurality of R-compatible anode electrodes 2R reach just below the stripe-shaped openings 24, the strip-shaped opening pattern 6 is irradiated with the plurality of R-compatible anodes by irradiating the elongated laser beam L. It can be formed across the electrode 2R. As a result, a striped R organic EL layer 3R (thin film pattern) can be formed on a plurality of R-compatible anode electrodes 2R.
　さらに、上記レーザ加工装置は、ＴＦＴ基板１を一定速度で移動しながら、レーザ光Ｌを照射してフィルム４に開口パターン６を形成する場合について説明したが、本発明はこれに限られず、レーザ加工装置は、ＴＦＴ基板１を矢印Ｘ方向にステップ移動しながら、又はＴＦＴ基板１を基板面に平行な面内を２次元方向にステップ移動しながら、レーザ光Ｌを照射してフィルム４に開口パターン６を形成するものであってもよいし、ＴＦＴ基板１の複数のアノード電極に対応して複数のマイクロレンズ２７を設けたフォトマスク２３を介してレーザ光Ｌを照射してフィルム４に開口パターン６を一括形成するものであってもよい。 Further, the laser processing apparatus has been described with respect to the case where the aperture pattern 6 is formed on the film 4 by irradiating the laser beam L while moving the TFT substrate 1 at a constant speed. The processing apparatus opens the film 4 by irradiating the laser beam L while moving the TFT substrate 1 stepwise in the direction of arrow X or moving the TFT substrate 1 stepwise in a plane parallel to the substrate surface. The pattern 6 may be formed, or the film 4 is opened by irradiating laser light L through a photomask 23 provided with a plurality of microlenses 27 corresponding to a plurality of anode electrodes of the TFT substrate 1. The pattern 6 may be formed collectively.
　さらにまた、レーザ光Ｌによる開口パターン６の形成は、前述と同様に、一定深さまでは例えば１～２０Ｊ／ｃｍ２と比較的高いエネルギー密度のレーザ光Ｌを照射して一気に加工し、残りの部分はエネルギー強度を０．１Ｊ／ｃｍ２以下、望ましくは０．０６Ｊ／ｃｍ２以下に下げたレーザ光Ｌを照射してゆっくり加工するようにするとよい。これにより、開口パターン６の形成時間を短縮するのと同時に、アノード電極がレーザ光Ｌによってダメージを受けるのを抑制することができる。 Furthermore, the formation of the opening pattern 6 by the laser beam L is processed at once by irradiating the laser beam L having a relatively high energy density of, for example, 1 to 20 J / cm 2 at a constant depth, as described above. The portion may be processed slowly by irradiating the laser beam L with the energy intensity lowered to 0.1 J / cm 2 or less, preferably 0.06 J / cm 2 or less. Thereby, the formation time of the opening pattern 6 can be shortened, and at the same time, the anode electrode can be prevented from being damaged by the laser light L.
　第６ステップにおいては、図４（ｆ）に示すように、例えば真空蒸着装置を使用してＴＦＴ基板１のＲ対応のアノード電極２Ｒ上に蒸着マスク１４の開口パターン６を介してＲ有機ＥＬ層３Ｒを蒸着形成し、さらに、該Ｒ有機ＥＬ層３Ｒ上にＩＴＯ膜からなる透明電極層３１を蒸着又はスパッタリング等の公知の蒸着技術を使用して蒸着形成する。 In the sixth step, as shown in FIG. 4F, for example, an R organic EL layer is formed on the R corresponding anode electrode 2R of the TFT substrate 1 via the opening pattern 6 of the vapor deposition mask 14 using a vacuum vapor deposition apparatus. 3R is vapor-deposited, and a transparent electrode layer 31 made of an ITO film is vapor-deposited on the R organic EL layer 3R using a known vapor deposition technique such as vapor deposition or sputtering.
　第７ステップにおいては、図４（ｇ）に示すように、磁気チャックステージ１３の静磁界発生手段１２を下降させた状態で、蒸着マスク１４の縁部を同図に矢印＋Ｚで示す上方に持ち上げて蒸着マスク１４のフィルム４をＴＦＴ基板１面から機械的に剥離する。これにより、Ｒ対応のアノード電極２Ｒ上にＲ有機ＥＬ層３Ｒが残りＲ有機ＥＬ層形成工程が終了する。 In the seventh step, as shown in FIG. 4G, with the static magnetic field generating means 12 of the magnetic chuck stage 13 lowered, the edge of the vapor deposition mask 14 is lifted upward as indicated by the arrow + Z in the figure. Then, the film 4 of the vapor deposition mask 14 is mechanically peeled from the surface of the TFT substrate 1. As a result, the R organic EL layer 3R remains on the R corresponding anode electrode 2R, and the R organic EL layer forming step is completed.
　図６は、Ｇ有機ＥＬ層形成工程を示す断面説明図である。このＧ有機ＥＬ層形成工程は、磁性材料を含んで構成され、Ｇ有機ＥＬ層３Ｇのパターンよりも形状寸法の大きい開口部９を形成した金属部材１０に可視光を透過する樹脂製のフィルム４を保持するステップ（同図（ａ）参照）と、内部に静磁界発生手段１２を備えた磁気チャックステージ１３上にＴＦＴ基板１を載置するステップ（同図（ｂ）参照）と、ＴＦＴ基板１上のＧ対応のアノード電極２Ｇが金属部材１０の上記開口部９内に位置するように位置合わせして金属部材１０をＴＦＴ基板１上に載置するステップ（同図（ｃ））と、上記静磁界発生手段１２の静磁界により金属部材１０をＴＦＴ基板１上に吸着し、フィルム４をＴＦＴ基板１の上面に密着させるステップ（同図（ｄ））と、ＴＦＴ基板１上のＧ対応のアノード電極２Ｇに対応したフィルム４部分にレーザ光Ｌを照射し、当該部分のフィルム４にＧ有機ＥＬ層３Ｇのパターンと形状寸法の同じ開口パターン６を設けて蒸着マスク１４を形成するステップ（同図（ｅ））と、ＴＦＴ基板１上のＧ対応のアノード電極２Ｇ上に蒸着マスク１４の開口パターン６を介してＧ有機ＥＬ層３Ｇを蒸着形成するステップ（同図（ｆ））と、上記蒸着マスク１４を同図に示す矢印＋Ｚ方向に持ち上げて剥離するステップ（同図（ｇ））と、を実行するもので、Ｒ有機ＥＬ層形成工程と同様にして行われる。 FIG. 6 is a cross-sectional explanatory view showing the G organic EL layer forming step. The G organic EL layer forming step includes a magnetic material, and is a resin film 4 that transmits visible light to the metal member 10 in which the opening 9 having a larger shape than the pattern of the G organic EL layer 3G is formed. Holding the TFT substrate 1 on the magnetic chuck stage 13 having the static magnetic field generating means 12 (see FIG. 5B), and the TFT substrate. A step of placing the metal member 10 on the TFT substrate 1 so that the anode electrode 2G corresponding to G on 1 is positioned in the opening 9 of the metal member 10 (FIG. 3C); The step of adsorbing the metal member 10 on the TFT substrate 1 by the static magnetic field of the static magnetic field generating means 12 and closely adhering the film 4 to the upper surface of the TFT substrate 1 (FIG. 4D) and the G corresponding to the TFT substrate 1 Anode electrode 2G A step of irradiating the corresponding film 4 part with laser light L, providing an opening pattern 6 having the same shape and dimension as the pattern of the G organic EL layer 3G on the film 4 of the part, and forming a vapor deposition mask 14 ((e) in the figure) ), Forming a G organic EL layer 3G on the anode electrode 2G corresponding to G on the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 14 (FIG. 5F), and forming the vapor deposition mask 14 The step of lifting and peeling in the arrow + Z direction shown in the figure (FIG. 5G) is performed, and is performed in the same manner as the R organic EL layer forming step.
　図７は、Ｂ有機ＥＬ層形成工程を示す断面説明図である。このＢ有機ＥＬ層形成工程は、磁性材料を含んで構成され、Ｂ有機ＥＬ層３Ｂのパターンよりも形状寸法の大きい開口部９を形成した金属部材１０に可視光を透過する樹脂製のフィルム４を保持するステップ（同図（ａ）参照）と、内部に静磁界発生手段１２を備えた磁気チャックステージ１３上にＴＦＴ基板１を載置するステップ（同図（ｂ）参照）と、ＴＦＴ基板１上のＢ対応のアノード電極２Ｂが金属部材１０の上記開口部９内に位置するように位置合わせして金属部材１０をＴＦＴ基板１上に載置するステップ（同図（ｃ））と、上記静磁界発生手段１２の静磁界により金属部材１０をＴＦＴ基板１上に吸着し、フィルム４をＴＦＴ基板１の上面に密着させるステップ（同図（ｄ））と、ＴＦＴ基板１上のＢ対応のアノード電極２Ｂに対応したフィルム４部分にレーザ光Ｌを照射し、当該部分のフィルム４にＢ有機ＥＬ層３Ｂのパターンと形状寸法の同じ開口パターン６を設けて蒸着マスク１４を形成するステップ（同図（ｅ））と、ＴＦＴ基板１上のＢ対応のアノード電極２Ｂ上に蒸着マスク１４の開口パターン６を介してＢ有機ＥＬ層３Ｂを蒸着形成するステップ（同図（ｆ））と、上記蒸着マスク１４を同図に示す矢印＋Ｚ方向に持ち上げて剥離するステップ（同図（ｇ））と、を実行するもので、Ｒ有機ＥＬ層又はＧ有機ＥＬ層形成工程と同様にして行われる。 FIG. 7 is a cross-sectional explanatory view showing the B organic EL layer forming step. This B organic EL layer forming step includes a magnetic material, and is a resin film 4 that transmits visible light to the metal member 10 in which the opening 9 having a larger size than the pattern of the B organic EL layer 3B is formed. Holding the TFT substrate 1 on the magnetic chuck stage 13 having the static magnetic field generating means 12 (see FIG. 5B), and the TFT substrate. A step of placing the metal member 10 on the TFT substrate 1 so that the anode electrode 2B corresponding to B on 1 is positioned in the opening 9 of the metal member 10 (FIG. 3C); The step of adsorbing the metal member 10 on the TFT substrate 1 by the static magnetic field of the static magnetic field generating means 12 and bringing the film 4 into close contact with the upper surface of the TFT substrate 1 (FIG. 4D) and the B corresponding to the TFT substrate 1 Anode electrode 2B A step of irradiating the corresponding film 4 part with the laser beam L, providing an opening pattern 6 having the same shape and pattern as the pattern of the B organic EL layer 3B on the film 4 of the part, and forming a vapor deposition mask 14 (FIG. 4E) ), Forming a B organic EL layer 3B on the anode electrode 2B corresponding to B on the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 14 (FIG. 5F), and forming the vapor deposition mask 14 The step of lifting and peeling in the arrow + Z direction shown in the figure (FIG. 5G) is performed, and is performed in the same manner as the R organic EL layer or G organic EL layer forming step.
　図８は、カソード電極形成工程を示す断面説明図である。このカソード電極形成工程は、ＴＦＴ基板１の各アノード電極２Ｒ，２Ｇ，２Ｂ上に形成された有機ＥＬ層３Ｒ，３Ｇ，３Ｂ上の透明電極層を電気的に接続するためのものであり、図８に示すように、先ず、公知の蒸着技術を使用してＴＦＴ基板１上面を覆ってＩＴＯ(Indium Tin Oxide)膜からなるカソード電極３２（透明電極）を形成する（同図（ａ）参照）。続いて、同様にしてカソード電極３２を覆って絶縁性の保護層３３を蒸着形成し（同図（ｂ）参照）、さらにその上に例えばＵＶ硬化性の樹脂を例えばスピンコート又はスプレー塗布して接着層３４を形成する（同図（ｃ）参照）。そして、上記接着層３４上に透明な対向基板３５を密着させた後、対向基板３５側から紫外線を照射して接着層３４を硬化させ、対向基板３５をＴＦＴ基板１に接合する（同図（ｄ）参照）。これにより、有機ＥＬ表示装置が完成する。 FIG. 8 is a cross-sectional explanatory view showing the cathode electrode forming step. This cathode electrode forming step is for electrically connecting the transparent electrode layers on the organic EL layers 3R, 3G, 3B formed on the anode electrodes 2R, 2G, 2B of the TFT substrate 1, As shown in FIG. 8, first, a cathode electrode 32 (transparent electrode) made of an ITO (IndiumInTin Oxide) film is formed by covering the upper surface of the TFT substrate 1 using a known vapor deposition technique (see FIG. 8A). . Subsequently, an insulating protective layer 33 is formed by vapor deposition so as to cover the cathode electrode 32 (see FIG. 5B), and a UV curable resin is applied thereon, for example, by spin coating or spraying. An adhesive layer 34 is formed (see FIG. 3C). Then, after the transparent counter substrate 35 is brought into close contact with the adhesive layer 34, the adhesive layer 34 is cured by irradiating ultraviolet rays from the counter substrate 35 side, and the counter substrate 35 is bonded to the TFT substrate 1 (see FIG. d)). Thereby, an organic EL display device is completed.
　図１１は、有機ＥＬ層形成工程において使用する蒸着マスクの製造方法の変形例を示す断面説明図である。ここでは、１例として、Ｒ有機ＥＬ層用の蒸着マスクの製造方法を説明する。
　先ず、同図（ａ）に示すように、磁気チャックステージ１３上に載置されたＴＦＴ基板１の上面を覆うように可視光を透過する、例えばフッ素系樹脂やカバーガラス等のレーザ光Ｌを吸収し難い透明部材３６を置く。 FIG. 11 is a cross-sectional explanatory view showing a modification of the method for manufacturing a vapor deposition mask used in the organic EL layer forming step. Here, the manufacturing method of the vapor deposition mask for R organic EL layers is demonstrated as an example.
First, as shown in FIG. 3A, laser light L such as a fluorine resin or a cover glass that transmits visible light so as to cover the upper surface of the TFT substrate 1 placed on the magnetic chuck stage 13 is used. A transparent member 36 that is difficult to absorb is placed.
　次に、図１１（ｂ）に示すように、金属部材１０の開口部９内にＴＦＴ基板１のＲ対応のアノード電極２Ｒが位置するように位置合わせした後、マスク用部材１１のフィルム４を上記透明部材３６上に密着させる。そして、その状態で、同図（ｃ）に示すように磁気チャックステージ１３の静磁界により金属部材１０を吸着してフィルム４及び透明部材３６を金属部材１０とＴＦＴ基板１との間に挟持する。 Next, as shown in FIG. 11 (b), after aligning so that the anode electrode 2 R corresponding to R of the TFT substrate 1 is positioned in the opening 9 of the metal member 10, the film 4 of the mask member 11 is attached. The transparent member 36 is closely attached. In this state, the metal member 10 is attracted by the static magnetic field of the magnetic chuck stage 13 and the film 4 and the transparent member 36 are sandwiched between the metal member 10 and the TFT substrate 1 as shown in FIG. .
　続いて、図１１（ｄ）に示すように、ＴＦＴ基板１上のＲ対応のアノード電極２Ｒに対応したフィルム４部分にレーザ光Ｌを照射し、当該部分のフィルム４にＲ有機ＥＬ層３Ｒのパターンと形状寸法の同じ開口パターン６を設けて蒸着マスク１４を形成する。このとき、透明部材３６は、レーザ光Ｌを吸収しないためレーザ加工されない。 Subsequently, as shown in FIG. 11 (d), the film 4 corresponding to the anode electrode 2R corresponding to R on the TFT substrate 1 is irradiated with the laser light L, and the film 4 of the portion is irradiated with the R organic EL layer 3R. An evaporation mask 14 is formed by providing an opening pattern 6 having the same shape and dimensions as the pattern. At this time, since the transparent member 36 does not absorb the laser light L, it is not laser processed.
　次いで、図１１（ｅ）に示すように、蒸着マスク１４上に例えば一定の電圧を印加可能に構成された静電チャックステージ３７を載置し、該静電チャックステージ３７により蒸着マスク１４のフィルム４を静電吸着すると共に、磁気チャックステージ１３の静磁界をオフする。そして、静電チャックステージ３７に蒸着マスク１４を吸着した状態で、同図に示す矢印＋Ｚ方向に垂直に静電チャックステージ３７を持ち上げ、同図に示す矢印Ｙ方向に透明部材３６を引き抜く。 Next, as shown in FIG. 11 (e), an electrostatic chuck stage 37 configured to be able to apply a constant voltage, for example, is placed on the vapor deposition mask 14, and the film of the vapor deposition mask 14 is placed on the electrostatic chuck stage 37. 4 is electrostatically attracted and the static magnetic field of the magnetic chuck stage 13 is turned off. Then, with the vapor deposition mask 14 adsorbed to the electrostatic chuck stage 37, the electrostatic chuck stage 37 is lifted perpendicular to the arrow + Z direction shown in the figure, and the transparent member 36 is pulled out in the arrow Y direction shown in the figure.
　その後、図１１（ｆ）に示すように、再び、静電チャックステージ３７を矢印－Ｚ方向に垂直に降ろして蒸着マスク１４をＴＦＴ基板１上に置く。そして、静電チャックステージ３７をオフすると共に磁気チャックステージ１３をオンし、同図（ｇ）に示すように磁力により蒸着マスク１４の金属部材１０を吸着してフィルム４をＴＦＴ基板１の上面に密着させた後、静電チャックステージ３７を取り除く。これにより、蒸着マスク１４の製造方法は終了する。 Thereafter, as shown in FIG. 11 (f), the electrostatic chuck stage 37 is again lowered vertically in the direction of the arrow −Z, and the deposition mask 14 is placed on the TFT substrate 1. Then, the electrostatic chuck stage 37 is turned off and the magnetic chuck stage 13 is turned on, and the metal member 10 of the vapor deposition mask 14 is attracted by a magnetic force as shown in FIG. After the contact, the electrostatic chuck stage 37 is removed. Thereby, the manufacturing method of the vapor deposition mask 14 is complete | finished.
　以降、Ｒ有機ＥＬ層３Ｒの形成は、上記蒸着マスク１４を使用して、図４（ｆ），（ｇ）と同様にして行われる。さらに、Ｇ有機ＥＬ層３Ｇ及びＢ有機ＥＬ層３Ｂの形成も同様にして形成されたマスクを使用して行うことができる。 Thereafter, the formation of the R organic EL layer 3R is performed in the same manner as in FIGS. 4F and 4G using the vapor deposition mask 14. Furthermore, the G organic EL layer 3G and the B organic EL layer 3B can be formed using a mask formed in the same manner.
　上述のように、フィルム４とＴＦＴ基板１との間に可視光を透過する透明部材３６を介在させた状態でレーザ光Ｌを照射し、フィルム４をアブレーションして開口パターン６を形成すれば、アブレーションによりフィルム４の残渣が発生した場合でも、残渣が透明部材３６によって完全にブロックされてアノード電極２Ｒ～２Ｂ上に付着することがない。したがって、アノード電極２Ｒ～２Ｂと有機ＥＬ層３Ｒ～３Ｂとの間の接触抵抗が上昇したり、残渣が有機ＥＬ層３Ｒ～３Ｂにダメージを与えたりして有機ＥＬ層３Ｒ～３Ｂの発光特性を低下させるおそれがない。 As described above, if the transparent member 36 that transmits visible light is interposed between the film 4 and the TFT substrate 1, the laser light L is irradiated, and the film 4 is ablated to form the opening pattern 6. Even when the residue of the film 4 is generated by ablation, the residue is completely blocked by the transparent member 36 and does not adhere to the anode electrodes 2R to 2B. Therefore, the contact resistance between the anode electrodes 2R to 2B and the organic EL layers 3R to 3B is increased, or the residue damages the organic EL layers 3R to 3B, so that the light emission characteristics of the organic EL layers 3R to 3B are improved. There is no risk of lowering.
　なお、以上の説明においては、透明部材３６がレーザ光Ｌを吸収し難い部材である場合について述べたが、本発明はこれに限られず、透明部材３６は、フィルム４の厚みに対して十分に厚いものであれば、ポリイミド等のレーザ光Ｌを吸収し易い部材であってもよい。この場合は、フィルム４に対するレーザ加工が完了した後、透明部材３６のレーザ加工が未終了の段階でレーザ光Ｌの照射を停止すればよい。 In the above description, the case where the transparent member 36 is a member that hardly absorbs the laser light L has been described. However, the present invention is not limited to this, and the transparent member 36 is sufficiently thick with respect to the thickness of the film 4. As long as it is thick, it may be a member that easily absorbs the laser beam L such as polyimide. In this case, after the laser processing on the film 4 is completed, the irradiation of the laser beam L may be stopped when the laser processing of the transparent member 36 is not completed.
　また、上記薄膜パターン形成方法の第２の実施形態においては、各有機ＥＬ層３Ｒ～３Ｂ形成時に、有機ＥＬ層３Ｒ～３Ｂ上にさらに透明電極層３１を形成する場合について説明したが、本発明はこれに限られず、有機ＥＬ層３Ｒ～３Ｂ形成時には透明電極層３１を形成しなくてもよい。 Further, in the second embodiment of the thin film pattern forming method, the case where the transparent electrode layer 31 is further formed on the organic EL layers 3R to 3B when the organic EL layers 3R to 3B are formed has been described. However, the transparent electrode layer 31 may not be formed when the organic EL layers 3R to 3B are formed.
　さらに、上記薄膜パターン形成方法の第２の実施形態においては、静磁界発生手段１２が永久磁石である場合について説明したが、本発明はこれに限られず、静磁界発生手段１２は電磁石であってもよい。 Furthermore, in the second embodiment of the thin film pattern forming method, the case where the static magnetic field generating means 12 is a permanent magnet has been described. However, the present invention is not limited to this, and the static magnetic field generating means 12 is an electromagnet. Also good.
　また、上記薄膜パターン形成方法の第２の実施形態においては、金属部材１０が磁性材料で構成されている場合について説明したが、本発明はこれに限られず、金属部材１０は非磁性材料であってもよい。この場合、フィルム４をＴＦＴ基板１と金属部材１０との間に挟持するためには、磁気チャックステージ１３に替えて、一定の電圧を印加可能に構成された静電チャックステージを使用し、該静電チャックステージ上にＴＦＴ基板１を載置した後、該ステージに電圧を印加して金属部材１０をＴＦＴ基板１上に静電吸着しフィルム４を挟持するとよい。 In the second embodiment of the thin film pattern forming method, the case where the metal member 10 is made of a magnetic material has been described. However, the present invention is not limited to this, and the metal member 10 is made of a nonmagnetic material. May be. In this case, in order to sandwich the film 4 between the TFT substrate 1 and the metal member 10, instead of the magnetic chuck stage 13, an electrostatic chuck stage configured to be able to apply a constant voltage is used. After the TFT substrate 1 is placed on the electrostatic chuck stage, a voltage is applied to the stage to electrostatically attract the metal member 10 onto the TFT substrate 1 and sandwich the film 4.
　さらに、上記薄膜パターン形成方法の第２の実施形態においては、金属部材１０に粘着剤を介してフィルム４を保持する場合について説明したが、本発明はこれに限られず、金属部材１０にフィルム４を熱圧着により被着させてもよい。この場合、フィルム４が熱可塑性樹脂であるときには、金属部材１０の開口部９をフィルム４で埋めることができる。又は、フィルム４を金属部材１０には接着せず、ＴＦＴ基板１と金属部材１０との間に挟み込んで使用してもよい。 Furthermore, in 2nd Embodiment of the said thin film pattern formation method, although the case where the film 4 was hold | maintained via the adhesive on the metal member 10 was demonstrated, this invention is not limited to this, The film 4 is attached to the metal member 10. May be applied by thermocompression bonding. In this case, when the film 4 is a thermoplastic resin, the opening 9 of the metal member 10 can be filled with the film 4. Alternatively, the film 4 may be used by being sandwiched between the TFT substrate 1 and the metal member 10 without being bonded to the metal member 10.
　以上の説明においては、本発明による蒸着マスクの第２実施形態が薄膜パターン形成過程で製造される場合について述べたが、蒸着マスクの第２実施形態は、薄膜パターンの形成とは別工程で製造されたものであってもよい。
　図１２は、本発明による蒸着マスクの第２実施形態の別の製造方法を示す工程図である。この蒸着マスクの製造方法は、金属部材１０を形成する第１ステップと、金属部材１０に樹脂製フィルム４を密着保持する第２ステップと、基板３８上にフィルム４を密着させる第３ステップと、フィルム４に複数の開口パターン６を形成する第４ステップと、金属部材１０とフィルム４とを一体的に基板３８上から剥離する第５ステップと、を行って、図１３、又は図１４に示す蒸着マスクを製造するものである。 In the above description, the case where the second embodiment of the vapor deposition mask according to the present invention is manufactured in the process of forming a thin film pattern has been described, but the second embodiment of the vapor deposition mask is manufactured in a separate process from the formation of the thin film pattern. It may be what was done.
FIG. 12 is a process diagram showing another manufacturing method of the second embodiment of the vapor deposition mask according to the present invention. The vapor deposition mask manufacturing method includes a first step of forming the metal member 10, a second step of closely holding the resin film 4 on the metal member 10, a third step of closely contacting the film 4 on the substrate 38, A fourth step of forming a plurality of opening patterns 6 in the film 4 and a fifth step of peeling the metal member 10 and the film 4 integrally from the substrate 38 are performed, and the results are shown in FIG. 13 or FIG. A vapor deposition mask is manufactured.
　なお、本発明による蒸着マスクの第２実施形態の具体的構成は、基板上に予め定められた薄膜パターンの形成領域に対応して、該薄膜パターンと形状寸法の同じ貫通する開口パターン６を形成した可視光を透過する例えばポリイミドやポリエチレンテレフタレート（ＰＥＴ）等の樹脂製のフィルム４と、該フィルム４の一面に密接され、上記開口パターン６に対応して該開口パターン６よりも形状寸法が大きい開口部９を有する金属部材１０とを含んで構成されている。図１３に示す蒸着マスク１４は、細長状の開口パターン６を複数列備えたものであり、図１４に示す蒸着マスク１４は、複数のブリッジ３９によって分離されて一列に並んだ複数の開口パターン６を複数列備えたもので、形成しようとする薄膜パターンの形状に合わせて適宜選択される。図１３，１４において、符号４０は、基板に予め設けられた基板側アライメントマークに対して位置合わせするためのマスク側アライメントマークである。 The specific configuration of the second embodiment of the vapor deposition mask according to the present invention is to form an opening pattern 6 having the same shape and dimension as the thin film pattern corresponding to a predetermined thin film pattern formation region on the substrate. A film 4 made of a resin such as polyimide or polyethylene terephthalate (PET) that transmits visible light, and is in close contact with one surface of the film 4 and has a shape dimension larger than that of the opening pattern 6 corresponding to the opening pattern 6. And a metal member 10 having an opening 9. The vapor deposition mask 14 shown in FIG. 13 is provided with a plurality of elongated opening patterns 6, and the vapor deposition mask 14 shown in FIG. 14 is separated by a plurality of bridges 39 and arranged in a row. Are selected according to the shape of the thin film pattern to be formed. 13 and 14, reference numeral 40 denotes a mask side alignment mark for alignment with a substrate side alignment mark provided in advance on the substrate.
　上記第１ステップは、図１２（ａ）に示すように、薄板状の磁性材料に、薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部９を設けて金属部材１０を形成する工程である。 In the first step, as shown in FIG. 12 (a), a plurality of openings 9 having a shape larger than that of the thin film pattern are provided in a thin plate-shaped magnetic material corresponding to the formation region of the thin film pattern. This is a step of forming the metal member 10.
　より詳細には、第１ステップにおいて、金属部材１０は、例えば１μｍ～数ｍｍ程度、好ましくは３０μｍ～５０μｍ程度の厚みを有する例えばニッケル、ニッケル合金、インバー、又はインバー合金からなる磁性材料の薄板にレジストマスクを使用して上記開口部９をウェットエッチング又はイオンミーリング等のドライエッチングにより、又はレーザ加工して形成される。この場合、開口部９は、後述の第４ステップにおいてフィルム４に形成される開口パターン６よりも形状が大きければよいので、開口部９の形成精度は開口パターン６程の高精度は要求されない。なお、開口部９の形状は、フィルム４側に向かって徐々に狭くなっている（縦断面形状が逆台形状）のがよい。これにより、蒸着時に開口部９の縁部における蒸着材料のけられがなくなり、薄膜パターンの膜厚を均一に形成することができる。 More specifically, in the first step, the metal member 10 is formed into a thin plate of magnetic material made of, for example, nickel, nickel alloy, invar, or invar alloy having a thickness of about 1 μm to several mm, preferably about 30 μm to 50 μm. The opening 9 is formed by dry etching such as wet etching or ion milling using a resist mask or by laser processing. In this case, the opening 9 only needs to have a larger shape than the opening pattern 6 formed in the film 4 in the fourth step described later, and therefore the opening 9 is not required to be as precise as the opening pattern 6. In addition, the shape of the opening part 9 is good to become narrow gradually toward the film 4 side (a longitudinal cross-sectional shape is an inverted trapezoid shape). As a result, the deposition material at the edge of the opening 9 is not squeezed during deposition, and the film thickness of the thin film pattern can be formed uniformly.
　上記第２ステップは、図１２（ｂ）に示すように、金属部材１０の一面に、可視光を透過する樹脂製のフィルム４を密接して保持し、マスク用部材を形成する工程であり、この実施例においては、フィルム４に金属部材１０を熱圧着して行われる。 The second step is a step of forming a mask member by closely holding a resin film 4 that transmits visible light on one surface of the metal member 10, as shown in FIG. 12 (b). In this embodiment, the metal member 10 is thermocompression bonded to the film 4.
　第２ステップは、より詳細には、図１５（ａ）に示すように平板状のガラス等の基材４１上に密着された可視光を透過する熱可塑性のフィルム４、又は表面に融着性処理が施されたフィルム４の上面に金属部材１０を載置するステップと、同図（ｂ）に示すように一定温度及び圧力の下で金属部材１０をフィルム４に熱圧着して一体化するステップと、同図（ｃ）に示すようにフィルム４を基材４１の表面から剥離するステップと、を含んでいる。この場合、フィルム４によって金属部材１０のねじれや撓みが規制されるので、金属部材１０の開口部９の形状及び位置が維持される。 More specifically, in the second step, as shown in FIG. 15 (a), a thermoplastic film 4 that transmits visible light adhered on a substrate 41 such as flat glass or the like, or a surface that is fusible. The step of placing the metal member 10 on the upper surface of the processed film 4 and the metal member 10 are thermocompression bonded to the film 4 under a constant temperature and pressure as shown in FIG. And a step of peeling the film 4 from the surface of the substrate 41 as shown in FIG. In this case, since the twist and bending of the metal member 10 are regulated by the film 4, the shape and position of the opening 9 of the metal member 10 are maintained.
　この第２ステップは、金属部材１０の四辺を掴んで夫々外方に引っ張って金属部材１０に一定のテンションを掛けた状態で実施するとよい。又は、平坦な面を有する磁気チャックの該平坦面に、磁性材料からなる金属部材１０を磁力により吸着した状態で行ってもよく、両方を適宜組合せて行ってもよい。なお、上記磁気チャックは、永久磁石を備えて構成されたものであってもよいが、磁界の発生をオン／オフ制御できる電磁石を備えて構成されたものがよい。さらに、図１５（ｃ）に示すフィルム４を基材４１の表面から剥離するステップは、別の磁気チャックを金属部材１０上に設置し、磁力により該磁気チャックの平坦な吸着面に金属部材１０を吸着保持した状態で行うとよい。これにより、金属部材１０の開口部９の形状及び位置を高精度に維持することができる。 This second step may be performed in a state where a constant tension is applied to the metal member 10 by grasping the four sides of the metal member 10 and pulling them outward. Alternatively, the magnetic member 10 made of a magnetic material may be attracted to the flat surface of a magnetic chuck having a flat surface by a magnetic force, or a combination of both may be performed. The magnetic chuck may include a permanent magnet, but preferably includes an electromagnet that can control on / off of the generation of a magnetic field. Further, in the step of peeling the film 4 from the surface of the base material 41 shown in FIG. 15 (c), another magnetic chuck is placed on the metal member 10, and the metal member 10 is placed on the flat suction surface of the magnetic chuck by a magnetic force. It is good to carry out in the state which adsorbed and held. Thereby, the shape and position of the opening 9 of the metal member 10 can be maintained with high accuracy.
　ここで使用するフィルム材料は、紫外線のレーザ光Ｌの照射によりアブレーションする樹脂製フィルムがよく、好ましくは、例えばポリイミドやポリエチレンテレフタレート（ＰＥＴ）等がよい。特に、ポリイミドは、線膨張係数が約１０×１０－６～約４０×１０－６／℃であり、ニッケル等の金属の線膨張係数（約６×１０－６～約２０×１０－６／℃）と許容範囲内で等しいため、金属材料からなる金属部材１０と組合せて使用する場合、蒸着時に両部材の熱膨張係数の違いにより蒸着に反りが発生するのを抑制することができるのでより望ましい。また、インバー等の金属は熱膨張係数が極めて小さい（約２×１０－６／℃以下）ため、蒸着時の輻射熱による蒸着マスクの熱膨張を規制して開口パターン６の位置精度を維持することができる。 The film material used here may be a resin film that is ablated by irradiation with ultraviolet laser light L, and preferably, for example, polyimide, polyethylene terephthalate (PET), or the like. In particular, the linear expansion coefficient of polyimide is about 10 × 10 −6 to about 40 × 10 −6 / ° C., and the linear expansion coefficient of metal such as nickel (about 6 × 10 −6 to about 20 × 10 −6 / (° C.) and within an allowable range, when used in combination with the metal member 10 made of a metal material, it is possible to suppress the occurrence of warpage in vapor deposition due to the difference in thermal expansion coefficient between the two members during vapor deposition. desirable. Further, since the metal such as Invar has a very small coefficient of thermal expansion (about 2 × 10 −6 / ° C. or less), the thermal expansion of the deposition mask due to radiant heat during deposition is regulated to maintain the positional accuracy of the opening pattern 6. Can do.
　上記第３ステップにおいては、図１２（ｃ）に示すように、第１の磁気チャック４２上に載置された基板３８上の薄膜パターン形成領域が金属部材１０の開口部９内に位置するように金属部材１０に予め形成されたマスク側アライメントマーク４０（図１３，１４参照）と基板３８に予め形成された図示省略の基板側アライメントマークとを顕微鏡により観察しながら、両マークが一定の位置関係を成すように調整して金属部材１０を基板３８に位置合わせした後、基板３８上に設置し、第１の磁気チャック４２の磁力により金属部材１０を吸着してフィルム４を基板３８上面に密着させる。 In the third step, as shown in FIG. 12C, the thin film pattern formation region on the substrate 38 placed on the first magnetic chuck 42 is positioned in the opening 9 of the metal member 10. While observing with a microscope a mask-side alignment mark 40 (see FIGS. 13 and 14) formed in advance on the metal member 10 and a substrate-side alignment mark (not shown) formed in advance on the substrate 38, both marks are at a fixed position. After the metal member 10 is aligned with the substrate 38 by adjusting the relationship, the metal member 10 is attracted by the magnetic force of the first magnetic chuck 42 and the film 4 is placed on the upper surface of the substrate 38. Adhere closely.
　この場合、上記基板３８は、薄膜パターンを形成しようとする蒸着対象の基板であっても、又は後述の第３ステップにおいてレーザ光Ｌの照射目標となる基準パターン４３を薄膜パターン形成領域に対応して設けた基準基板であってもよい。上記基板３８が蒸着対象の基板であるときには、後述の第４ステップにおける開口パターン６の形成に続けて該開口パターン６を介して蒸着し、基板３８上に薄膜パターンを形成してもよい。これにより、高精細な薄膜パターンも位置精度よく形成することができる。 In this case, even if the said board | substrate 38 is a board | substrate of the vapor deposition object which is going to form a thin film pattern, or the reference pattern 43 used as the irradiation target of the laser beam L in the 3rd step mentioned later corresponds to a thin film pattern formation area. Or a reference substrate provided. When the substrate 38 is a substrate to be deposited, the thin film pattern may be formed on the substrate 38 by vapor deposition through the opening pattern 6 following the formation of the opening pattern 6 in the fourth step described later. Thereby, a high-definition thin film pattern can also be formed with high positional accuracy.
　上記第４ステップにおいては、図１２（ｄ）に示すように、金属部材１０の開口部９内の薄膜パターン形成領域（基準パターン４３）に対応したフィルム４の部分に、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザを使用して、エネルギー密度が０．１Ｊ／ｃｍ２～２０Ｊ／ｃｍ２のレーザ光Ｌを照射し、薄膜パターンと形状寸法が同じ貫通する開口パターン６を形成する。 In the fourth step, as shown in FIG. 12D, the wavelength of the film 4 corresponding to the thin film pattern formation region (reference pattern 43) in the opening 9 of the metal member 10 is 400 nm or less. for example, using an excimer laser of KrF248nm, energy density is irradiated with a laser beam L of 0.1J / cm 2 ~ 20J / cm 2, a thin film pattern and geometry to form an opening pattern 6 to the same through.
　上記第５ステップにおいては、図１２（ｅ）に示すように、吸着面が平坦に形成された第２の磁気チャック４４を金属部材１０の上面に設置し、第２の磁気チャック４４の電磁石をオンすると共に第１の磁気チャック４２の電磁石をオフし、第２の磁気チャック４４の磁力により金属部材１０を吸着して該金属部材１０及びフィルム４を一体的に基板３８上から剥離し、第２の磁気チャック４４側に受け取る。これにより、本発明の蒸着マスクの製造工程が終了し、図１３，１４に示すような蒸着マスクが完成する。以後、この第２の磁気チャック４４に金属部材１０を吸着した状態で蒸着マスク１４のハンドリングを行えば、蒸着マスク１４の開口パターン６の形状及び位置が維持され、その後の高精細な薄膜パターンの形成を容易に行うことができる。 In the fifth step, as shown in FIG. 12E, the second magnetic chuck 44 having a flat attracting surface is placed on the upper surface of the metal member 10, and the electromagnet of the second magnetic chuck 44 is installed. The electromagnet of the first magnetic chuck 42 is turned off, the metal member 10 is attracted by the magnetic force of the second magnetic chuck 44, and the metal member 10 and the film 4 are integrally peeled off from the substrate 38. 2 is received on the magnetic chuck 44 side. Thereby, the manufacturing process of the vapor deposition mask of this invention is complete | finished, and a vapor deposition mask as shown in FIG. Thereafter, if the vapor deposition mask 14 is handled while the metal member 10 is attracted to the second magnetic chuck 44, the shape and position of the opening pattern 6 of the vapor deposition mask 14 are maintained, and the subsequent high-definition thin film pattern is formed. Formation can be performed easily.
　上記マスク用部材の他の形成例として、フィルム４の表面を改質処理した後、金属部材１０を熱圧着して金属部材１０とフィルム４とを一体化してもよい。上記表面改質処理には、フィルム４の表面をエッチングして、表面にカルボキシル基（－ＣＯＯＨ）やカルボニル基（－ＣＯＯ）等の親水基を形成する方法がある。これにより、フィルム４と金属部材１０との界面における化学結合により両部材の接着が可能となる。又は、例えばシランカップリング剤等をフィルム４と金属部材１０との界面に塗布し、シラノール（ＳｉＯＨ）基を形成させて濡れ性を改善すると共に、フィルム４と金属部材１０の界面に形成された水素結合を、さらに脱水縮合させてもよい。これにより、より安定な化学結合による接着が可能となる。他に、フィルム４の表面を大気圧プラズマ又は減圧プラズマ中でプラズマ処理したり、アルカリ溶液でフィルム４の表面をウェットエッチングしたりしてフィルム４の表面を改質することも可能である。 As another example of forming the mask member, the metal member 10 and the film 4 may be integrated by thermocompression bonding of the metal member 10 after the surface of the film 4 is modified. The surface modification treatment includes a method of etching the surface of the film 4 to form hydrophilic groups such as carboxyl groups (—COOH) and carbonyl groups (—COO) on the surface. Thereby, both members can be bonded by chemical bonding at the interface between the film 4 and the metal member 10. Alternatively, for example, a silane coupling agent or the like is applied to the interface between the film 4 and the metal member 10 to form a silanol (SiOH) group to improve wettability, and the film 4 and the metal member 10 are formed at the interface. Hydrogen bonds may be further subjected to dehydration condensation. Thereby, adhesion by a more stable chemical bond becomes possible. In addition, the surface of the film 4 can be modified by performing plasma treatment on the surface of the film 4 in atmospheric pressure plasma or reduced pressure plasma, or wet etching the surface of the film 4 with an alkaline solution.
　図１６は、上記マスク用部材の更に他の形成例を示す説明図である。
　この形成例は、図１６（ａ）に示すように平板状のガラス等の基材４１上に密着されたフィルム４の上面に金属部材１０を載置するステップと、同図（ｂ）に示すように金属部材１０の開口部９内に可視光を透過する硬化性樹脂４５を塗布して硬化させ、金属部材１０とフィルム４とを一体化するステップと、同図（ｃ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に金属部材１０を吸着してフィルム４を基材４１の表面から剥離するステップと、を含んでいる。ここで使用する硬化性樹脂４５は、例えば紫外線硬化又は光硬化性の無溶剤又は溶剤が極めて少ない樹脂がよい。 FIG. 16 is an explanatory view showing still another example of forming the mask member.
In this example, as shown in FIG. 16A, a step of placing the metal member 10 on the upper surface of the film 4 adhered on the substrate 41 such as flat glass is shown in FIG. In this way, the step of applying the curable resin 45 that transmits visible light into the opening 9 of the metal member 10 and curing it to integrate the metal member 10 and the film 4 as shown in FIG. For example, it includes a step of adsorbing the metal member 10 to a flat adsorption surface of a magnetic chuck (not shown) and peeling the film 4 from the surface of the substrate 41. The curable resin 45 used here is preferably, for example, a UV-free or photo-curable solventless or resin with very little solvent.
　図１７は、上記マスク用部材の更に他の形成例を示す説明図である。
　この形成例は、図１７（ａ）に示すように、例えば平坦な面を有する図示省略の静電チャック上に静電吸着されたフィルム４の一面にスパッタリングやメッキ等の公知の蒸着技術により銅等の金属膜４６を蒸着するステップと、同図（ｂ）に示すように金属膜４６上にノンフラックス半田４７を塗布するステップと、同図（ｃ）に示すようにノンフラックス半田４７により金属膜４６を金属部材１０に半田付けしてフィルム４を金属部材１０に接着するステップと、を含むものである。ノンフラックス半田４７により接着する場合には、蒸着時に不純物ガスが発生するおそれがない。したがって、例えば有機ＥＬ発光層を蒸着形成する際に、不純物ガスにより有機ＥＬ発光層がダメージを受けるという問題を解消することができる。 FIG. 17 is an explanatory view showing still another example of forming the mask member.
In this example, as shown in FIG. 17A, for example, copper is deposited on one surface of a film 4 electrostatically adsorbed on an electrostatic chuck (not shown) having a flat surface by a known deposition technique such as sputtering or plating. The step of depositing a metal film 46, etc., the step of applying non-flux solder 47 on the metal film 46 as shown in FIG. 5 (b), and the non-flux solder 47 as shown in FIG. Soldering the film 46 to the metal member 10 and bonding the film 4 to the metal member 10. In the case of bonding with the non-flux solder 47, there is no possibility that impurity gas is generated during vapor deposition. Therefore, for example, when the organic EL light emitting layer is formed by vapor deposition, the problem that the organic EL light emitting layer is damaged by the impurity gas can be solved.
　図１８は、上記マスク用部材の更に他の形成例を示す説明図である。
　この形成例は、図１８（ａ）に示すように、ガラス等の平坦面を有する基材４１上に例えばポリイミド等の樹脂溶液４８を例えば約３０μｍの厚みにスピンコート又はディップコートした後、この樹脂溶液４８を加熱乾燥して半乾燥状態にするステップと、同図（ｂ）に示すように半乾燥状態の樹脂上に金属部材１０を圧着した後、この半乾燥状態の樹脂を乾燥して金属部材１０に保持されたフィルム４を形成するステップと、同図（ｃ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に金属部材１０を吸着してフィルム４を基材４１の表面から剥離するステップと、を含んでいる。 FIG. 18 is an explanatory view showing still another example of forming the mask member.
In this example, as shown in FIG. 18A, a resin solution 48 such as polyimide is spin-coated or dip-coated to a thickness of about 30 μm, for example, on a substrate 41 having a flat surface such as glass. A step of heating and drying the resin solution 48 to a semi-dry state, and after pressing the metal member 10 on the semi-dry resin as shown in FIG. 5B, the semi-dry resin is dried. The step of forming the film 4 held on the metal member 10 and, as shown in FIG. 5C, for example, the metal member 10 is attracted to a flat attracting surface of a magnetic chuck (not shown) to attach the film 4 to the substrate 41. Peeling from the surface.
　なお、上記樹脂溶液４８の半乾燥状態は、加熱温度及び加熱時間を適宜制御して実現することができ、予め実験により加熱条件が決められる。さらに、同様にして樹脂を完全乾燥させるための条件も事前に決定される。 In addition, the semi-dry state of the resin solution 48 can be realized by appropriately controlling the heating temperature and the heating time, and the heating conditions are determined in advance by experiments. Furthermore, the conditions for completely drying the resin are similarly determined in advance.
　図１９は、上記マスク用部材の更に他の形成例を示す説明図である。
　この形成例は、先ず、図１９（ａ）に示すようにガラス等の基材４１上にフォトレジストや感光性ポリイミド等の感光性の樹脂溶液４８を約３０μｍの厚みにスピンコート又はディップコートするステップと、同図（ｂ）に示すようにフォトマスクを使用して上記感光性樹脂を露光した後、現像して金属部材１０の開口部９に対応した位置に突状パターン４９を形成するステップと、同図（ｃ）に示すように金属部材１０の開口部９と突状パターン４９とを合致させた状態で金属部材１０を感光性樹脂上に圧着した後、予め定められた温度で加熱乾燥して金属部材１０に保持されたフィルム４を形成するステップと、同図（ｄ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に金属部材１０を吸着してフィルム４を基材４１の表面から剥離するステップと、を含んでいる。 FIG. 19 is an explanatory view showing still another example of forming the mask member.
In this formation example, first, as shown in FIG. 19A, a photosensitive resin solution 48 such as photoresist or photosensitive polyimide is spin-coated or dip-coated to a thickness of about 30 μm on a substrate 41 such as glass. And, after exposing the photosensitive resin using a photomask as shown in FIG. 5B, developing to form a protruding pattern 49 at a position corresponding to the opening 9 of the metal member 10 Then, as shown in FIG. 5C, after the metal member 10 is pressure-bonded on the photosensitive resin in a state where the opening 9 of the metal member 10 and the protruding pattern 49 are matched, heating is performed at a predetermined temperature. The step of forming the film 4 which is dried and held on the metal member 10 and the film 4 is formed by adsorbing the metal member 10 on a flat adsorption surface of a magnetic chuck (not shown), for example, as shown in FIG. Table of material 41 And it includes a step of peeling, from.
　この場合、上記突状パターン４９を上部が狭く下部が広い縦断面台形状に形成すれば、金属部材１０の開口部９と突状パターン４９との嵌合を突状パターン４９の側面をガイドとして容易に行うことができる。また、金属部材１０の開口部９は、突状パターン４９により位置決め規制されるため、金属部材１０の開口部９の位置精度を図１７における場合よりも高くすることができる。 In this case, if the protruding pattern 49 is formed in a trapezoidal shape having a narrow upper portion and a lower lower portion, the fitting of the opening 9 of the metal member 10 and the protruding pattern 49 is performed using the side surface of the protruding pattern 49 as a guide. It can be done easily. In addition, since the positioning of the opening 9 of the metal member 10 is regulated by the protruding pattern 49, the positional accuracy of the opening 9 of the metal member 10 can be made higher than in the case of FIG.
　図２０は、上記マスク用部材の更に他の形成例を示す説明図である。
　この形成例は、図２０（ａ）に示すように、平板状の基材４１の上面に金属部材１０を載置するステップと、同図（ｂ）に示すように金属部材１０の上面にポリイミド等の樹脂溶液４８を金属部材１０の厚み以上の厚みに塗布した後、これを予め定められた温度で加熱乾燥して金属部材１０に保持されたフィルム４を形成するステップと、同図（ｃ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に金属部材１０を吸着してフィルム４を基材４１の表面から剥離するステップと、を含んでいる。 FIG. 20 is an explanatory view showing still another example of forming the mask member.
In this example, as shown in FIG. 20A, a step of placing the metal member 10 on the upper surface of the flat substrate 41 and a polyimide on the upper surface of the metal member 10 as shown in FIG. (C) applying a resin solution 48 such as a thickness equal to or greater than the thickness of the metal member 10 to heat and dry it at a predetermined temperature to form the film 4 held on the metal member 10; ), For example, a step of adsorbing the metal member 10 to a flat adsorption surface of a magnetic chuck (not shown) and peeling the film 4 from the surface of the base material 41 is included.
　この場合、図２０（ａ），（ｂ）に示す各ステップは、金属部材１０を吸着面がガラス等により平坦に形成された別の磁気チャックの上記吸着面上に載置し、該磁気チャックの磁力により金属部材１０を吸着保持した状態で行うとよい。これにより、金属部材１０の開口部９の形状及び位置を高精度に保つことができる。 In this case, in each step shown in FIGS. 20A and 20B, the metal member 10 is placed on the attraction surface of another magnetic chuck whose attraction surface is formed flat by glass or the like. It may be performed in a state in which the metal member 10 is attracted and held by the magnetic force. Thereby, the shape and position of the opening 9 of the metal member 10 can be maintained with high accuracy.
　図２１は、上記マスク用部材の更に他の形成例を示す説明図である。
　この形成例は、図２１（ａ）に示すように、例えばステンレス鋼等からなる平板状の金属製基材５０の上面にフォトレジストや感光性ポリイミド等の感光性の樹脂溶液４８を約３０μｍの厚みにスピンコート又はディップコートするステップと、同図（ｂ）に示すようにフォトマスクを使用して感光性樹脂を露光した後、現像して金属部材１０の開口部９に対応した位置に島パターン５１（フィルム４に相当）を形成するステップと、同図（ｃ）に示すように島パターン５１の周囲領域にニッケル又はニッケル合金等の磁性膜を約３０μｍの厚みにメッキして金属部材１０を形成するステップと、同図（ｄ）に示すように例えば図示省略の磁気チャックの平坦な吸着面に金属部材１０を吸着して金属部材１０と島パターン５１（フィルム４）とを一体的に金属製基材５０の表面から剥離するステップと、含んでいる。 FIG. 21 is an explanatory view showing still another example of forming the mask member.
In this example, as shown in FIG. 21A, a photosensitive resin solution 48 such as a photoresist or photosensitive polyimide is applied to the upper surface of a flat metal substrate 50 made of, for example, stainless steel. A step of spin coating or dip coating on the thickness, and exposing the photosensitive resin using a photomask as shown in FIG. 5B, developing, and developing the island at a position corresponding to the opening 9 of the metal member 10. A step of forming a pattern 51 (corresponding to the film 4), and a metal film 10 by plating a magnetic film such as nickel or a nickel alloy to a thickness of about 30 μm around the island pattern 51 as shown in FIG. As shown in FIG. 4D, for example, the metal member 10 is attracted to a flat attracting surface of a magnetic chuck (not shown), and the metal member 10 and the island pattern 51 (film 4) are formed. Are integrally peeled off from the surface of the metal substrate 50.
　この場合、フォトリソグラフィー技術を使用して形成した樹脂製の島パターン５１（フィルム４）の周囲領域に磁性膜をメッキ形成して金属部材１０を作製しているので、金属部材１０の開口部９を高精度に形成することができる。 In this case, since the metal member 10 is produced by plating a magnetic film around the resin island pattern 51 (film 4) formed by using the photolithography technique, the opening 9 of the metal member 10 is formed. Can be formed with high accuracy.
　図２２～２４は本発明による蒸着マスク（第２実施形態）の更に別の製造方法を示す工程図である。以下、図を参照して詳細に説明する。
　先ず、図２２（ａ）に示すように、平坦面を有する図示省略のステージ上に例えば静電吸着して保持された可視光を透過する厚みが１０μｍ～３０μｍ程度の、例えばポリイミドのフィルム４の一面４ａに、同図（ｂ）に示すようにスパッタリング等の公知の蒸着技術により５０ｎｍ程度の厚みの例えばニッケル等からなる磁性材料の金属膜の下地層５２を被着する。この場合、下地層５２は、磁性材料の金属膜に限られず、良電導性の非磁性材料の金属膜であってもよい。 22 to 24 are process diagrams showing still another manufacturing method of the vapor deposition mask (second embodiment) according to the present invention. Hereinafter, it will be described in detail with reference to the drawings.
First, as shown in FIG. 22A, for example, a polyimide film 4 having a thickness of about 10 μm to 30 μm for transmitting visible light, for example, electrostatically adsorbed and held on a stage (not shown) having a flat surface. A base layer 52 of a metal film made of a magnetic material made of nickel or the like having a thickness of about 50 nm is deposited on the surface 4a by a known vapor deposition technique such as sputtering as shown in FIG. In this case, the underlayer 52 is not limited to a metal film made of a magnetic material, and may be a metal film made of a highly conductive nonmagnetic material.
　次に、図２２（ｃ）に示すように、下地層５２上に３０μｍ程度の厚みのレジスト５３（感光性材料）を例えばスピンコートする。 Next, as shown in FIG. 22C, a resist 53 (photosensitive material) having a thickness of about 30 μm is spin-coated on the base layer 52, for example.
　次いで、図２２（ｄ）に示すように、フォトマスク５４を使用して露光し、同図（ｅ）に示すように現像して、基板（例えばＴＦＴ基板）上の薄膜パターン形成領域（例えば有機ＥＬ層形成領域）に対応した部分に薄膜パターンよりも形状の大きいレジスト５３の島パターン５１を形成する。この場合、レジスト５３がネガ型であるときには、使用するフォトマスク５４は、基板上の薄膜パターン形成領域に対応した部分に開口を形成したものであり、レジスト５３がポジ型であるときには、フォトマスク５４は、基板上の薄膜パターン形成領域に対応した部分を遮光するものである。 Next, as shown in FIG. 22 (d), exposure is performed using a photomask 54, development is performed as shown in FIG. 22 (e), and a thin film pattern formation region (eg, organic) on a substrate (eg, TFT substrate) is developed. An island pattern 51 of a resist 53 having a shape larger than that of the thin film pattern is formed in a portion corresponding to the EL layer formation region. In this case, when the resist 53 is a negative type, the photomask 54 to be used has an opening formed in a portion corresponding to the thin film pattern formation region on the substrate, and when the resist 53 is a positive type, the photomask 54 shields light from the portion corresponding to the thin film pattern formation region on the substrate.
　続いて、図２２（ｆ）に示すように、フィルム４の上記島パターン５１の周辺領域にニッケル又はインバー等の磁性材料からなる金属部材１０を３０μｍ程度の厚みにメッキ形成する。 Subsequently, as shown in FIG. 22 (f), a metal member 10 made of a magnetic material such as nickel or invar is plated to a thickness of about 30 μm in the peripheral region of the island pattern 51 of the film 4.
　さらに、図２２（ｇ）に示すように、上記島パターン５１を剥離して金属部材１０に島パターン５１に対応する開口部９を形成した後、同図（ｈ）に示すように、開口部９内の下地層５２をエッチングして除去し、マスク用部材１１を形成する。なお、マスク用部材１１の予め定められた位置には、金属部材１０により基板との位置合わせをするためのマスク側アライメントマーク４０が形成される。 Further, as shown in FIG. 22 (g), after the island pattern 51 is peeled off and the opening 9 corresponding to the island pattern 51 is formed in the metal member 10, as shown in FIG. 9 is removed by etching, and the mask member 11 is formed. Note that a mask-side alignment mark 40 for alignment with the substrate is formed by the metal member 10 at a predetermined position of the mask member 11.
　このように形成されたマスク用部材１１は、図２３（ａ）に示すように吸着面４４ａが平坦面に形成された第２の磁気チャック４４によって金属部材１０側を吸着して保持される。 The mask member 11 formed in this way is attracted and held on the metal member 10 side by the second magnetic chuck 44 having the attracting surface 44a formed on a flat surface as shown in FIG.
　次に、図２３（ｂ）に示すように、吸着面４２ａが平坦面に形成された第１の磁気チャック４２上に載置された基板１（例えばＴＦＴ基板）の上方にマスク用部材１１を位置付け、基板１に予め形成された図示省略の基板側アライメントマークとマスク用部材１１に予め形成されたマスク側アライメントマーク４０とを顕微鏡により観察しながら、両マークが一定の位置関係となるように調整して、同図（ｃ）に示すように薄膜パターン形成領域５５（例えばアノード電極上の領域）が上記開口部９内に位置するように基板１とマスク用部材１１とを位置合わせした後、基板１上にフィルム４を密着させる。その後、同図（ｄ）に示すように、第１の磁気チャック４２の電磁石５６をオンすると共に第２の磁気チャック４４の電磁石５６をオフし、第１の磁気チャック４２により金属部材１０を吸着してマスク用部材１１を第２の磁気チャック４４から基板１上に移す。 Next, as shown in FIG. 23B, the mask member 11 is placed above the substrate 1 (for example, a TFT substrate) placed on the first magnetic chuck 42 having the attracting surface 42a formed on a flat surface. Positioning and observing with a microscope a substrate-side alignment mark (not shown) formed in advance on the substrate 1 and a mask-side alignment mark 40 formed in advance on the mask member 11 so that both marks have a certain positional relationship. After the adjustment, the substrate 1 and the mask member 11 are aligned so that the thin film pattern formation region 55 (for example, the region on the anode electrode) is positioned in the opening 9 as shown in FIG. The film 4 is brought into close contact with the substrate 1. Thereafter, as shown in FIG. 4D, the electromagnet 56 of the first magnetic chuck 42 is turned on and the electromagnet 56 of the second magnetic chuck 44 is turned off, and the metal member 10 is attracted by the first magnetic chuck 42. Then, the mask member 11 is transferred from the second magnetic chuck 44 onto the substrate 1.
　続いて、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザを使用して、図２４（ａ）に示すように、マスク用部材１１の開口部９内の薄膜パターン形成領域に対応したフィルム４の部分にエネルギー密度が０．１Ｊ／ｃｍ２～２０Ｊ／ｃｍ２のレーザ光Ｌを照射し、底に薄い層を残して一定深さの凹部５を形成する。次いで、同図（ｂ）に示すように、公知のプラズマ処理装置内でプラズマ処理し、上記凹部５の底の薄い層を除去して貫通する開口パターン６を形成する。これにより、蒸着マスク１４が製造される。 Subsequently, using an excimer laser having a wavelength of 400 nm or less, for example, KrF248 nm, a portion of the film 4 corresponding to the thin film pattern forming region in the opening 9 of the mask member 11 as shown in FIG. Is irradiated with a laser beam L having an energy density of 0.1 J / cm 2 to 20 J / cm 2 to form a recess 5 having a constant depth, leaving a thin layer at the bottom. Next, as shown in FIG. 2B, plasma processing is performed in a known plasma processing apparatus, and a thin layer at the bottom of the concave portion 5 is removed to form an opening pattern 6 penetrating therethrough. Thereby, the vapor deposition mask 14 is manufactured.
　次に、上記蒸着マスク１４上に第２の磁気チャック４４が置かれる。そして、図２４（ｃ）に示すように、第２の磁気チャック４４の電磁石５６をオンすると共に第１の磁気チャック４２の電磁石５６をオフし、第２の磁気チャック４４により金属部材１０を吸着して蒸着マスク１４を第２の磁気チャック４４に移す。以後、蒸着マスク１４は第２の磁気チャック４４に保持された状態で保管される。 Next, a second magnetic chuck 44 is placed on the vapor deposition mask 14. Then, as shown in FIG. 24C, the electromagnet 56 of the second magnetic chuck 44 is turned on and the electromagnet 56 of the first magnetic chuck 42 is turned off, and the metal member 10 is attracted by the second magnetic chuck 44. Then, the vapor deposition mask 14 is transferred to the second magnetic chuck 44. Thereafter, the vapor deposition mask 14 is stored while being held by the second magnetic chuck 44.
　なお、続けて、基板１上に薄膜パターン（例えば有機ＥＬ層）を蒸着形成する場合には、図２４（ｂ）において蒸着マスク１４が形成されると、基板１を蒸着マスク１４と一体的に第１の磁気チャック４２に保持した状態で例えば真空蒸着装置の真空槽内に設置し、蒸着マスク１４の開口パターン６を介して蒸着材料を真空蒸着し、薄膜パターンを形成してもよい。 When a thin film pattern (for example, an organic EL layer) is formed on the substrate 1 by vapor deposition, the substrate 1 is integrated with the vapor deposition mask 14 when the vapor deposition mask 14 is formed in FIG. For example, the thin film pattern may be formed by placing the first magnetic chuck 42 in a vacuum chamber of a vacuum deposition apparatus and vacuum depositing the deposition material through the opening pattern 6 of the deposition mask 14.
　次に、フィルム４に開口パターンをレーザ加工して形成する方法について、より詳細に説明する。
　ここでは、図２５（ａ），（ｂ）に示すように、薄膜パターンの形成領域に対応して該薄膜パターンよりも形状が大きい貫通する複数の開口部９を設けた薄板状の磁性材料からなる金属部材１０を、可視光を透過する樹脂製のフィルム４の一面に密接して形成したマスク用部材１１に、例えば図１３に示すような細長状の開口パターン６を形成する場合について説明する。 Next, a method for forming an opening pattern on the film 4 by laser processing will be described in more detail.
Here, as shown in FIGS. 25 (a) and 25 (b), from a thin plate-like magnetic material provided with a plurality of through-holes 9 having a shape larger than that of the thin film pattern corresponding to the formation region of the thin film pattern. For example, a case in which an elongated opening pattern 6 as shown in FIG. 13 is formed on a mask member 11 in which a metal member 10 to be formed is formed in close contact with one surface of a resin film 4 that transmits visible light will be described. .
　この場合は、図２５（ｃ）に示すように、透明基板５７の一面５７ａに薄膜パターンと形状寸法の同じ、後述のレーザ光Ｌの照射目標となる複数の基準パターン４３を薄膜パターンの配列ピッチと同じ配列ピッチで並べて形成し、該基準パターン４３を下側にしてレーザ加工装置のステージ上に載置された基準基板３８（図２６参照）の上記基準パターン４３が金属部材１０の開口部９内に位置するように金属部材１０を基準基板３８に対して位置合わせした後、フィルム４を基準基板３８の他面５７ｂに密着させる。なお、基準基板３８には、上記複数の基準パターン４３の形成領域外にてマスク側アライメントマーク４０に対応した位置に、例えば十字状の基板側アライメントマーク５８が上記基準パターン４３と同時にクロム（Ｃｒ）等の薄膜により形成されている。 In this case, as shown in FIG. 25 (c), a plurality of reference patterns 43, which are the same as the thin film pattern and have the same dimensions as the thin film pattern, are formed on one surface 57a of the transparent substrate 57. The reference pattern 43 of the reference substrate 38 (see FIG. 26) placed on the stage of the laser processing apparatus with the reference pattern 43 on the lower side is formed at the opening 9 of the metal member 10. After the metal member 10 is aligned with the reference substrate 38 so as to be positioned inside, the film 4 is brought into close contact with the other surface 57 b of the reference substrate 38. In addition, on the reference substrate 38, for example, a cross-shaped substrate-side alignment mark 58 is formed at the position corresponding to the mask-side alignment mark 40 outside the formation region of the plurality of reference patterns 43 together with the reference pattern 43. ) Or the like.
　上記金属部材１０と基準基板３８との位置合わせは、金属部材１０に予め形成されたマスク側アライメントマーク４０と、基準基板３８に予め形成された基板側アライメントマーク５８とを顕微鏡により観察しながら、基板側アライメントマーク５８の中心がマスク側アライメントマーク４０の中心に合致するように調整して行われる。 The alignment of the metal member 10 and the reference substrate 38 is performed by observing the mask-side alignment mark 40 formed in advance on the metal member 10 and the substrate-side alignment mark 58 formed in advance on the reference substrate 38 with a microscope. The adjustment is performed so that the center of the substrate side alignment mark 58 matches the center of the mask side alignment mark 40.
　また、フィルム４と基準基板３８との密着は、ステージの裏面に備えたマグネットチャックの磁力により金属部材１０を吸着して行われ、同時に金属部材１０、フィルム４及び基準基板３８が一体的にステージに固定される。 Further, the film 4 and the reference substrate 38 are brought into close contact with each other by attracting the metal member 10 by the magnetic force of the magnet chuck provided on the back surface of the stage, and at the same time, the metal member 10, the film 4 and the reference substrate 38 are integrated with the stage. Fixed to.
　次に、図２５（ｄ）に示すように、金属部材１０の開口部９内の基準パターン４３に対応したフィルム４の部分に、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザを使用して、エネルギー密度が０．１Ｊ／ｃｍ２～２０Ｊ／ｃｍ２のレーザ光Ｌを照射し、薄膜パターンと同形状の貫通する開口パターン６を形成する。 Next, as shown in FIG. 25D, an excimer laser having a wavelength of 400 nm or less, for example, KrF248 nm, is used for the portion of the film 4 corresponding to the reference pattern 43 in the opening 9 of the metal member 10. A laser beam L having an energy density of 0.1 J / cm 2 to 20 J / cm 2 is irradiated to form an opening pattern 6 having the same shape as the thin film pattern.
　このレーザ加工は、マスク用部材１１と基準基板３８とを基準基板３８の基準パターン４３の並び方向（図２５（ｄ）の矢印方向）に搬送しながら、レーザ光Ｌの照射位置に対してマスク用部材１１及び基準基板３８の搬送方向上流側の位置を撮影可能に設けられた撮像手段１７で透過照明により基準パターン４３を撮影し、該撮影画像に基づいて基準パターン４３を検出し、該検出時刻を基準にしてレーザ光Ｌの照射タイミングを制御して実行される。これにより、図１３に示すような蒸着マスクが完成する。 In this laser processing, the mask member 11 and the reference substrate 38 are conveyed in the alignment direction of the reference patterns 43 of the reference substrate 38 (in the direction of the arrow in FIG. 25D), while the mask is applied to the irradiation position of the laser light L. The reference pattern 43 is photographed by transmitted illumination by the imaging means 17 provided so as to be capable of photographing the upstream position of the member 11 and the reference substrate 38 in the transport direction, and the reference pattern 43 is detected based on the photographed image. This is executed by controlling the irradiation timing of the laser light L with reference to the time. Thereby, a vapor deposition mask as shown in FIG. 13 is completed.
　上記撮像手段１７は、マスク用部材１１及び基準基板３８の搬送方向と交差する方向に複数の受光エレメントを一直線に並べて設けたラインカメラであり、上記基準パターン４３は、撮像手段１７の撮影画像に基づいて上記搬送方向における輝度変化（例えば、透過照明の場合は明から暗への輝度変化）から検出することができる。 The imaging means 17 is a line camera in which a plurality of light receiving elements are arranged in a straight line in a direction intersecting with the conveying direction of the mask member 11 and the reference substrate 38, and the reference pattern 43 is an image taken by the imaging means 17. Based on this, it is possible to detect from a change in luminance in the transport direction (for example, a change in luminance from light to dark in the case of transmitted illumination).
　さらに、レーザ加工は、撮像手段１７の撮影画像に基づいて、金属部材１０の開口部９の中心と基準基板３８の基準パターン４３の中心との間の位置ずれ量が許容値内であることを確認しながら実行される。より詳細には、撮像手段１７の撮影画像に基づいてマスク用部材１１及び基準基板３８の移動方向における図２７に示すような閾値を超えて変化する輝度変化を検出し、互いに隣接する暗から明への輝度変化の位置から両者間の距離Ｄ１を算出し、さらに互いに隣接する明から暗への輝度変化の位置から両者間の距離Ｄ２を算出し、｜Ｄ１－Ｄ２｜を演算して該演算結果が予め定められた許容値内にあるか否かが判定される。この場合、上記演算結果が許容値外のときには、金属部材１０と基準基板３８とのアライメントミス、又は金属部材１０の開口部９の形成精度不良と判断して、レーザ光の照射は行なわれず、レーザ加工の工程は直ちに終了される。 Further, in the laser processing, based on the photographed image of the imaging means 17, the amount of positional deviation between the center of the opening 9 of the metal member 10 and the center of the reference pattern 43 of the reference substrate 38 is within an allowable value. It is executed with confirmation. More specifically, a change in luminance that exceeds the threshold value as shown in FIG. 27 in the moving direction of the mask member 11 and the reference substrate 38 is detected based on the image taken by the imaging means 17, and the brightness changes from dark to bright. The distance D1 between the two is calculated from the position of the luminance change to the distance, and the distance D2 between the two is calculated from the position of the luminance change from light to dark adjacent to each other, and | D1-D2 | It is determined whether the result is within a predetermined tolerance. In this case, when the calculation result is outside the allowable value, it is determined that the alignment error between the metal member 10 and the reference substrate 38 or the formation accuracy of the opening 9 of the metal member 10 is poor, and laser light irradiation is not performed. The laser processing process is immediately terminated.
　レーザ加工が終了すると、図２５（ｅ）に示すように、吸着面が平坦に形成された図示省略の磁気チャック（保持手段）を金属部材１０の上面に設置し、磁気チャックの電磁石をオンして磁気チャックの磁力により金属部材１０を吸着して蒸着マスクを基準基板３８上から剥離し、磁気チャック側に受け取る。これにより、本発明の蒸着マスクの製造工程が全て終了する。以後、この磁気チャックに金属部材１０を吸着した状態で蒸着マスクのハンドリングを行えば、蒸着マスクの開口パターン６の形状及び位置が維持され、その後の高精細な薄膜パターンの形成を容易に行うことができる。 When the laser processing is completed, as shown in FIG. 25E, a magnetic chuck (holding means) (not shown) having a flat attracting surface is placed on the upper surface of the metal member 10, and the electromagnet of the magnetic chuck is turned on. Then, the metal member 10 is attracted by the magnetic force of the magnetic chuck, and the vapor deposition mask is peeled off from the reference substrate 38 and received by the magnetic chuck side. Thereby, all the manufacturing processes of the vapor deposition mask of this invention are complete | finished. Thereafter, if the vapor deposition mask is handled while the metal member 10 is attracted to the magnetic chuck, the shape and position of the opening pattern 6 of the vapor deposition mask can be maintained, and subsequent high-definition thin film patterns can be easily formed. Can do.
　又は、一面に剥離容易な粘着剤を塗布したシートの前記一面側を金属部材１０の上面に密着し、シートに金属部材１０を貼り付けて蒸着マスクを基準基板３８上から剥離してもよい。これにより、蒸着マスクのハンドリング性がより向上する。 Alternatively, the one surface side of the sheet coated with an easily peelable adhesive may be adhered to the upper surface of the metal member 10, the metal member 10 may be attached to the sheet, and the vapor deposition mask may be peeled off from the reference substrate 38. Thereby, the handleability of a vapor deposition mask improves more.
　なお、以上の説明においては、マスク用部材１１及び基準基板３８を搬送しながらレーザ光Ｌを照射してフィルム４に開口パターン６を形成する場合について述べたが、本発明はこれに限られず、レーザ光Ｌ側を基準基板３８の基準パターン４３の配列方向にステップ移動しながら開口パターン６を形成してもよい。 In the above description, the case where the opening pattern 6 is formed on the film 4 by irradiating the laser beam L while conveying the mask member 11 and the reference substrate 38 has been described, but the present invention is not limited to this. The opening pattern 6 may be formed while stepping the laser light L side in the arrangement direction of the reference pattern 43 of the reference substrate 38.
　フィルム４に開口パターン６を加工するためには図９に示すレーザ加工装置を使用して行うことができる。この場合、マスク用部材１１と基準基板３８が一体的に搬送されることになる。 In order to process the opening pattern 6 on the film 4, it can be performed using a laser processing apparatus shown in FIG. In this case, the mask member 11 and the reference substrate 38 are integrally conveyed.
　以下、上記レーザ加工装置を使用して行う開口パターン６の形成について、図２８のフローチャートを参照して説明する。
　先ず、ステップＳ１においては、基準基板３８と、該基準基板３８の基準パターン４３を形成した面とは反対側の面に位置決めして密着されたマスク用部材１１とを上記基準パターン４３側を下にして一体的にステージ上に載置し、図示省略の搬送機構によりマスク用部材１１及び基準基板３８の縁部を保持して図９に示す矢印Ｚ方向に一定速度で搬送を開始する。 Hereinafter, the formation of the opening pattern 6 performed using the laser processing apparatus will be described with reference to the flowchart of FIG.
First, in step S1, the reference substrate 38 and the mask member 11 positioned and adhered to the surface of the reference substrate 38 opposite to the surface on which the reference pattern 43 is formed are placed with the reference pattern 43 side down. Then, it is placed on the stage integrally, and the edge of the mask member 11 and the reference substrate 38 is held by a conveyance mechanism (not shown), and conveyance is started at a constant speed in the arrow Z direction shown in FIG.
　ステップＳ２においては、撮像手段１７によりマスク用部材１１及び基準基板３８を下側から撮影し、その撮影画像を制御手段１９の画像処理部で処理して矢印Ｚ方向の暗から明への輝度変化及び明から暗への輝度変化（図２７参照）を検出する。 In step S2, the imaging member 17 captures the mask member 11 and the reference substrate 38 from below, and the captured image is processed by the image processing unit of the control unit 19 to change the brightness from dark to bright in the arrow Z direction. Then, a luminance change from light to dark (see FIG. 27) is detected.
　ステップＳ３においては、暗から明への輝度変化が検出されてから次の暗から明への輝度変化が検出されるまでの上記搬送機構のパルスモータの駆動パルス数、及び明から暗への輝度変化が検出されてから次の明から暗への輝度変化が検出されるまでの上記パルスモータの駆動パルス数を制御手段１９の演算部でカウントし、各カウント数から互いに隣接する暗から明への輝度変化部の間隔Ｄ１、及び互いに隣接する明から暗への輝度変化部の間隔Ｄ２を算出する。そして、｜Ｄ１－Ｄ２｜を演算して金属部材１０の開口部９の中心と基準パターン４３の中心との間の位置ずれ量を算出する。 In step S3, the number of driving pulses of the pulse motor of the transport mechanism from the detection of a change in luminance from dark to light until the detection of the next change in luminance from dark to light, and the luminance from light to dark. The number of drive pulses of the pulse motor from when the change is detected until the next brightness change from light to dark is detected is counted by the calculation unit of the control means 19, and from each count number to the dark to light adjacent to each other. The interval D1 between the luminance change portions and the interval D2 between the brightness change portions adjacent to each other from light to dark are calculated. Then, | D1-D2 | is calculated to calculate the amount of positional deviation between the center of the opening 9 of the metal member 10 and the center of the reference pattern 43.
　ステップＳ４においては、上記演算部で上記位置ずれ量とメモリから読み出した許容値とを比較し、上記位置ずれ量が許容範囲内にあるか否かを判定する。ここで、“ＹＥＳ”判定となるとステップＳ５に進む。一方、“ＮＯ”判定となった場合には、金属部材１０と基準基板３８とのアライメントミス、又は金属部材１０の開口部９の形成精度不良と判断してレーザ加工を終了する。そして、搬送機構を高速で移動させてマスク用部材１１及び基準基板３８を搬出する。 In step S4, the calculation unit compares the displacement amount with an allowable value read from the memory, and determines whether the displacement amount is within an allowable range. Here, if it becomes "YES" determination, it will progress to step S5. On the other hand, if “NO” determination is made, it is determined that the alignment error between the metal member 10 and the reference substrate 38 or the formation accuracy of the opening 9 of the metal member 10 is poor, and the laser processing is terminated. Then, the transport mechanism is moved at a high speed to carry out the mask member 11 and the reference substrate 38.
　ステップＳ５においては、画像処理部において明から暗への輝度変化にて奇数番目の輝度変化の検出に基づいて基準パターン４３の搬送方向先頭側の縁部が検出される。 In step S5, the leading edge of the reference pattern 43 in the conveyance direction is detected based on the detection of the odd-numbered luminance change in the luminance change from light to dark in the image processing unit.
　ステップＳ６においては、ステップＳ５で基準パターン４３が検出されると、該検出時刻を基準にして演算部で搬送機構のパルスモータの駆動パルス数をカウントする。そして、メモリから読み出したパルスカウント数の目標値と比較し、パルスカウント数が目標値と合致したか否か、即ちマスク用部材１１と一体的に基準基板３８が予め定められた所定距離移動したか否かが判定される。ここで、“ＹＥＳ”判定となるとステップＳ７に進む。なお、パルスカウント数が目標値に合致したときは、基準基板３８の基準パターン４３がレーザ光学ユニット１６のレーザ光Ｌの照射位置に丁度達したときである。 In step S6, when the reference pattern 43 is detected in step S5, the number of driving pulses of the pulse motor of the transport mechanism is counted by the arithmetic unit based on the detection time. Then, compared with the target value of the pulse count number read from the memory, whether or not the pulse count number matches the target value, that is, the reference substrate 38 is moved by a predetermined distance integrally with the mask member 11. It is determined whether or not. Here, if it becomes "YES" determination, it will progress to step S7. The pulse count number matches the target value when the reference pattern 43 of the reference substrate 38 has just reached the irradiation position of the laser light L of the laser optical unit 16.
　ステップＳ７においては、制御手段１９からエキシマレーザ２１に発振指令が出力され、エキシマレーザ２１はパルス発振する。これにより、レーザ光Ｌが基準基板３８の基準パターン４３上のフィルム４部分に照射し、当該部分のフィルム４をアブレーションして基準パターン４３（又は薄膜パターン）と形状寸法の同じ貫通する開口パターン６が形成される。なお、開口パターン６の形成は、エキシマレーザ２１から一定時間内に複数ショットのレーザ光Ｌを放射して行ってもよい。 In step S7, an oscillation command is output from the control means 19 to the excimer laser 21, and the excimer laser 21 pulsates. Thereby, the laser beam L is applied to the film 4 portion on the reference pattern 43 of the reference substrate 38, and the film 4 in the portion is ablated to penetrate the opening pattern 6 having the same shape and dimension as the reference pattern 43 (or thin film pattern). Is formed. The opening pattern 6 may be formed by emitting a plurality of shots of laser light L from the excimer laser 21 within a predetermined time.
　続いて、ステップＳ８に進んで基準パターン４３に対応した全ての開口パターン６が形成されたか否かが判定される。ここで、“ＮＯ”判定となると、ステップＳ２に戻って、全ての開口パターン６が形成されてステップＳ８が“ＹＥＳ”判定となるまで、ステップＳ２～Ｓ８が繰り返し実行される。 Subsequently, the process proceeds to step S8, where it is determined whether or not all the opening patterns 6 corresponding to the reference pattern 43 have been formed. If "NO" is determined here, the process returns to step S2, and steps S2 to S8 are repeatedly executed until all the opening patterns 6 are formed and step S8 is determined to be "YES".
　なお、ステップＳ７は、基準基板３８の搬送方向の先頭から２番目以降の基準パターン４３に対応する開口パターン６の形成を次のようにして行ってもよい。即ち、演算部において上記パルスモータの駆動パルス数をカウントし、該カウント数に基づいて算出した搬送機構の移動距離とメモリから読み出した基準パターン４３の配列ピッチとを比較し、両者が合致する度にエキシマレーザ２１を発振させて行ってもよい。 In step S7, the opening pattern 6 corresponding to the second and subsequent reference patterns 43 from the top in the transport direction of the reference substrate 38 may be formed as follows. That is, the number of driving pulses of the pulse motor is counted in the calculation unit, and the moving distance of the transport mechanism calculated based on the counted number is compared with the arrangement pitch of the reference pattern 43 read from the memory. Alternatively, the excimer laser 21 may be oscillated.
　また、以上の説明においては、ステップＳ３～Ｓ６がシリースに実行されるように述べたが、実際は、ステップＳ３～Ｓ４とステップＳ５～Ｓ６とはパラレルに実行される。 In the above description, it has been described that steps S3 to S6 are executed in series, but in actuality, steps S3 to S4 and steps S5 to S6 are executed in parallel.
　上記開口パターン６はレーザ加工ではなく、エッチングにより形成されてもよい。
　以下、開口パターン６をエッチングにより形成する場合について説明する。ここでは、例えば図２２に示す工程に従って形成されたマスク用部材に対して開口パターン６を形成する場合について説明する。 The opening pattern 6 may be formed by etching instead of laser processing.
Hereinafter, a case where the opening pattern 6 is formed by etching will be described. Here, the case where the opening pattern 6 is formed with respect to the member for masks formed, for example according to the process shown in FIG. 22 is demonstrated.
　先ず、図２９（ａ）に示すように、マスク用部材１１の両面に例えばポジ型のフォトレジスト５３を例えばディップ塗布する。 First, as shown in FIG. 29A, for example, a positive photoresist 53, for example, is dip-coated on both surfaces of the mask member 11.
　次いで、図２９（ｂ）に示すように、形成しようとする開口パターン６に対応して開口を設けたフォトマスク５４をフィルム４の金属部材１０を密接した第１の面４ａとは反対側の第２の面４ｂに近接対向させた状態で、フォトマスク５４に設けられた図示省略のアライメントマークと金属部材１０に設けられたマスク側アライメントマーク４０とを用いて第２のフォトマスク５４をマスク用部材１１に対して位置決めして配置し、フィルム４の第２の面４ｂに塗布されたフォトレジスト５３を露光現像する。これにより、同図（ｃ）に示すように上記開口部９に対応したフォトレジスト５３の部分に蒸着形成しようとする薄膜パターンの配列ピッチと同じ配列ピッチで並べて該薄膜パターンと同じ形状寸法の開口５９が形成され、レジストマスク６０が形成される。 Next, as shown in FIG. 29B, a photomask 54 having openings corresponding to the opening pattern 6 to be formed is placed on the side opposite to the first surface 4a where the metal member 10 of the film 4 is in close contact. The second photomask 54 is masked by using an alignment mark (not shown) provided on the photomask 54 and a mask side alignment mark 40 provided on the metal member 10 in a state of being opposed to the second surface 4b. The photo resist 53 applied to the second surface 4b of the film 4 is exposed and developed. As a result, as shown in FIG. 5C, openings having the same shape and dimensions as the thin film pattern are arranged at the same arrangement pitch as the thin film pattern to be deposited on the portion of the photoresist 53 corresponding to the opening 9. 59 is formed, and a resist mask 60 is formed.
　さらに、上記マスク用部材１１を、例えばポリイミド用エッチング液を満たした槽内に浸漬し、上記レジストマスク６０を使用してポリイミドのフィルム４をエッチングする。そして、図２９（ｄ）に示すように、開口パターン６を形成する。この場合、フォトレジスト５３の塗布条件、露光条件、現像条件、さらにエッチング条件等の諸条件を実験により適切に設定すれば、開口パターン６をテーパー角が５５°～６０°程度のテーパーに形成することができる。また、フィルム４のエッチングは、フィルム４の第２の面４ｂ側から行われるため、サイドエッチングの効果により、開口パターン６は、第２の面４ｂ側から第１の面４ａ側に向かって開口面積が徐々に小さくなる。そして、第１の面４ａ側の開口パターン６の面積が形成しようとする薄膜パターンの面積と同じになる。 Further, the mask member 11 is immersed in a tank filled with, for example, a polyimide etching solution, and the polyimide film 4 is etched using the resist mask 60. Then, as shown in FIG. 29D, an opening pattern 6 is formed. In this case, if various conditions such as the coating conditions, the exposure conditions, the development conditions, and the etching conditions of the photoresist 53 are appropriately set by experiments, the opening pattern 6 is formed with a taper having a taper angle of about 55 ° to 60 °. be able to. Moreover, since the etching of the film 4 is performed from the second surface 4b side of the film 4, the opening pattern 6 is opened from the second surface 4b side to the first surface 4a side due to the effect of side etching. The area gradually decreases. The area of the opening pattern 6 on the first surface 4a side is the same as the area of the thin film pattern to be formed.
　最後に、マスク用部材１１の両面に塗布されたフォトレジスト５３を有機溶剤で洗い流すことにより、図１３又は図１４に示す蒸着マスク１４が完成する。なお、フォトレジスト５３の代わりにドライフィルムレジストを使用してもよい。 Finally, the deposition mask 14 shown in FIG. 13 or FIG. 14 is completed by washing away the photoresist 53 applied on both surfaces of the mask member 11 with an organic solvent. A dry film resist may be used instead of the photoresist 53.
　ここで、上記図２９（ｄ）に示すフィルム４のエッチング工程は、マスク用部材１１の金属部材１０側を磁気チャック側として、金属部材１０を磁気チャックに磁気的に吸着した状態で行うとよい。 Here, the etching process of the film 4 shown in FIG. 29D is preferably performed in a state where the metal member 10 side of the mask member 11 is the magnetic chuck side and the metal member 10 is magnetically attracted to the magnetic chuck. .
　このようにして製造された蒸着マスク１４は、蒸着に際して、次のように使用される。以下、薄膜パターンとして有機ＥＬ層を蒸着形成する場合について、図３０，３１を参照して説明する。ここでは、一例として、Ｒ有機ＥＬ層を形成する場合について説明する。
　先ず、図３０（ａ）に示すように、第１の磁気チャック４２上に載置されたＴＦＴ基板１の上方に第２の磁気チャック４４に吸着して保持された蒸着マスク１４を位置付ける。この場合、蒸着マスク１４の金属部材１０がＴＦＴ基板１側となるようにする。 The vapor deposition mask 14 manufactured in this way is used as follows during vapor deposition. Hereinafter, the case where an organic EL layer is formed by vapor deposition as a thin film pattern will be described with reference to FIGS. Here, the case where an R organic EL layer is formed will be described as an example.
First, as shown in FIG. 30A, the vapor deposition mask 14 that is attracted and held by the second magnetic chuck 44 is positioned above the TFT substrate 1 placed on the first magnetic chuck 42. In this case, the metal member 10 of the vapor deposition mask 14 is arranged on the TFT substrate 1 side.
　そして、蒸着マスク１４のマスク側アライメントマーク４０とＴＦＴ基板１に予め形成された図示省略の基板側アライメントマークとを図示省略のカメラで観察しながら、両マークが一定の位置関係、例えば各マークの中心が合致するように、第１及び第２の磁気チャック４２，４４を相対移動して蒸着マスク１４とＴＦＴ基板１との位置合わせをする。 Then, while observing the mask side alignment mark 40 of the vapor deposition mask 14 and the substrate side alignment mark (not shown) formed in advance on the TFT substrate 1 with a camera (not shown), the two marks are in a certain positional relationship, for example, each mark. The deposition mask 14 and the TFT substrate 1 are aligned by relatively moving the first and second magnetic chucks 42 and 44 so that the centers coincide.
　蒸着マスク１４とＴＦＴ基板１との位置合わせが終了すると、第２の磁気チャック４４を第１の磁気チャック４２に対して、図３０（ａ）に示す矢印－Ｚ方向に垂直に下降し、同図（ｂ）に示すように蒸着マスク１４の金属部材１０をＴＦＴ基板１上に密接する。これにより、蒸着マスク１４の各開口パターン６がＴＦＴ基板１のＲ対応アノード電極２Ｒ上に位置付けられる。 When the alignment between the vapor deposition mask 14 and the TFT substrate 1 is completed, the second magnetic chuck 44 is lowered vertically with respect to the first magnetic chuck 42 in the direction of the arrow -Z shown in FIG. As shown in FIG. 2B, the metal member 10 of the vapor deposition mask 14 is brought into close contact with the TFT substrate 1. Thereby, each opening pattern 6 of the vapor deposition mask 14 is positioned on the R corresponding anode electrode 2 </ b> R of the TFT substrate 1.
　続いて、図３０（ｃ）に示すように、第１の磁気チャック４２をオンし、第２の磁気チャック４４をオフして蒸着マスク１４の金属部材１０を第１の磁気チャック４２に磁気的に吸着し、蒸着マスク１４をＴＦＴ基板１上に移す。その後、第２の磁気チャック４４を同図に示す矢印＋Ｚ方向に上昇して取除く。 Subsequently, as shown in FIG. 30C, the first magnetic chuck 42 is turned on, the second magnetic chuck 44 is turned off, and the metal member 10 of the vapor deposition mask 14 is magnetically applied to the first magnetic chuck 42. The vapor deposition mask 14 is transferred onto the TFT substrate 1. Thereafter, the second magnetic chuck 44 is lifted and removed in the arrow + Z direction shown in FIG.
　次に、蒸着マスク１４、ＴＦＴ基板１及び第２の磁気チャック４４を一体的に蒸着装置の真空槽内の所定位置に、蒸着マスク１４を下側にして蒸着源に対峙させた状態で設置する。そして、図３１（ａ）に示すように、予め設定された蒸着条件の下で真空蒸着を行い、ＴＦＴ基板１のＲ対応アノード電極２Ｒ上にＲ有機ＥＬ層３Ｒを形成する。 Next, the vapor deposition mask 14, the TFT substrate 1 and the second magnetic chuck 44 are integrally installed at a predetermined position in the vacuum chamber of the vapor deposition apparatus with the vapor deposition mask 14 facing down and facing the vapor deposition source. . Then, as shown in FIG. 31A, vacuum evaporation is performed under preset evaporation conditions to form an R organic EL layer 3 </ b> R on the R corresponding anode electrode 2 </ b> R of the TFT substrate 1.
　この場合、蒸着マスク１４の開口パターン６は、フィルム４の第１の面４ａ側から第２の面４ｂ側に向かって拡がった形状に形成され、且つ蒸着材料分子が飛来する側の蒸着マスク１４の面には、蒸着の影となるような部材が存在しないため、開口パターン６を介してＴＦＴ基板１上に蒸着されるＲ有機ＥＬ層３Ｒは、膜厚が均一になる。 In this case, the opening pattern 6 of the vapor deposition mask 14 is formed in a shape expanding from the first surface 4a side to the second surface 4b side of the film 4, and the vapor deposition mask 14 on the side on which the vapor deposition material molecules fly. Since there is no member that becomes a shadow of vapor deposition on this surface, the R organic EL layer 3R deposited on the TFT substrate 1 through the opening pattern 6 has a uniform film thickness.
　また、本発明による蒸着マスク１４は、従来のメタルマスクと比較して次のような利点がある。即ち、図３２（ａ）に示すように、従来のメタルマスク６１の場合には、メタルマスク６１とＴＦＴ基板１との間の隙間６３に蒸着材料が回り込んで付着して堆積物６４が堆積する。そして、この堆積物６４により、メタルマスク６１の開口パターン６の縁部が持ち上げられてメタルマスク６１が波打ち、そのために微細な薄膜パターン（例えば、Ｒ有機ＥＬ層３Ｒ）を精度よく形成することができないことがあった。しかしながら、本発明による蒸着マスク１４の場合には、フィルム４とＴＦＴ基板１との間には、金属部材１０の厚みに等しい、例えば３０μｍ程度の大きな隙間６３が存在し、且つ金属部材１０が開口パターン６の第１の面４ａ側の縁部から開口パターン６の外側に後退して位置しているために、同図（ｂ）に示すように、蒸着材料がフィルム４の第１の面４ａ側の開口パターン６の縁部に回り込んで付着しても、蒸着材料の堆積物６４により開口パターン６の縁部が持ち上げられるおそれがない。また、回り込んだ蒸着材料が金属部材１０とＴＦＴ基板１との隙間に侵入して付着するおそれもないため、蒸着マスク１４が波打つおそれもない。したがって、本発明の蒸着マスク１４によれば、微細な薄膜パターン（Ｒ有機ＥＬ層３Ｒ）も精度よく形成することができる。 Further, the vapor deposition mask 14 according to the present invention has the following advantages compared to the conventional metal mask. That is, as shown in FIG. 32A, in the case of the conventional metal mask 61, the vapor deposition material goes around and adheres to the gap 63 between the metal mask 61 and the TFT substrate 1, and deposit 64 is deposited. To do. The deposit 64 lifts the edge of the opening pattern 6 of the metal mask 61 to wave the metal mask 61. For this reason, a fine thin film pattern (for example, the R organic EL layer 3R) can be accurately formed. There was something I couldn't do. However, in the case of the vapor deposition mask 14 according to the present invention, a large gap 63 equal to the thickness of the metal member 10, for example, about 30 μm, exists between the film 4 and the TFT substrate 1, and the metal member 10 is opened. Since the pattern 6 is positioned so as to recede from the edge on the first surface 4a side of the pattern 6 to the outside of the opening pattern 6, the deposition material is formed on the first surface 4a of the film 4 as shown in FIG. Even if it goes around and adheres to the edge of the opening pattern 6 on the side, the edge of the opening pattern 6 is not lifted by the deposit 64 of the vapor deposition material. Further, since the deposited vapor deposition material does not enter the gap between the metal member 10 and the TFT substrate 1 and adhere to it, there is no possibility that the vapor deposition mask 14 will wave. Therefore, according to the vapor deposition mask 14 of the present invention, a fine thin film pattern (R organic EL layer 3R) can be formed with high accuracy.
　以上の説明においては、開口パターン６よりも形状寸法の大きい開口部９を設けた金属部材１０をフィルム４の一面４ａに密接させて構成された蒸着マスク１４について述べたが、本発明の蒸着マスク１４はこれに限られず、開口パターン６の外側部分にてフィルム４の一面４ａ又は内部に分散させて複数の薄片状の金属部材１０を設けたものであってもよい。以下、金属部材１０が薄片である場合について説明する。 In the above description, the vapor deposition mask 14 is described in which the metal member 10 provided with the opening 9 having a larger dimension than the opening pattern 6 is in close contact with the one surface 4a of the film 4. However, the vapor deposition mask of the present invention is described. 14 is not limited thereto, and a plurality of flaky metal members 10 may be provided by being dispersed on one surface 4a or inside of the film 4 at the outer portion of the opening pattern 6. Hereinafter, the case where the metal member 10 is a thin piece will be described.
　図３３は、本発明による蒸着マスク１４の第３実施形態を示す図であり、（ａ）は平面図、（ｂ）は（ａ）のＤ－Ｄ線断面矢視図である。この第３実施形態は、基板上に成膜形成しようとするストライプ状の薄膜パターンの配列ピッチと同じ配列ピッチで平行に並べて、該薄膜パターンと形状寸法の同じ複数の開口パターン６を形成した可視光を透過する、例えば厚みが１０μｍ～３０μｍ程度のポリイミドやポリエチレンテレフタレート（ＰＥＴ）等の樹脂製のフィルム４と、フィルム４の複数の開口パターン６の外側部分にて、フィルム４の一面４ａ又は内部に設けられた薄片状の金属部材１０とを備えて構成されている。以下、薄片が磁性材料であり、フィルム４の一面４ａに密接して設けられた厚みが１０μｍ～３０μｍ程度の金属部材１０である場合について説明する。 33A and 33B are views showing a third embodiment of the vapor deposition mask 14 according to the present invention, wherein FIG. 33A is a plan view and FIG. 33B is a sectional view taken along the line DD of FIG. In the third embodiment, a plurality of opening patterns 6 having the same shape and dimensions as the thin film pattern are formed by arranging them in parallel at the same arrangement pitch as the arrangement pitch of the striped thin film pattern to be formed on the substrate. For example, one surface 4a or the inside of the film 4 at the outer portion of the film 4 made of resin such as polyimide or polyethylene terephthalate (PET) having a thickness of, for example, about 10 μm to 30 μm and a plurality of opening patterns 6 of the film 4. And a flaky metal member 10 provided on the surface. Hereinafter, a case where the thin piece is a magnetic material and the metal member 10 having a thickness of about 10 μm to 30 μm provided in close contact with the one surface 4a of the film 4 will be described.
　この場合、金属部材１０は、図３４（ａ）に示すように、フィルム４の開口パターン６の長軸に平行な外側部分に該長軸に長軸を合致させたストライプ状の形態を有するものであってもよいが、このようなストライプ状の金属部材１０をフィルム４上にメッキ形成すると、フィルム４と金属部材１０との間の熱膨張率の違いから、同図（ｂ）に示すように蒸着マスク１４に反りが生じることがあり、基板との密着性が悪くなるおそれがある。 In this case, as shown in FIG. 34 (a), the metal member 10 has a striped form in which the major axis coincides with the major axis at the outer portion parallel to the major axis of the opening pattern 6 of the film 4. However, when such a stripe-shaped metal member 10 is formed on the film 4 by plating, the difference in thermal expansion coefficient between the film 4 and the metal member 10 is shown in FIG. In some cases, the vapor deposition mask 14 may be warped, and the adhesion to the substrate may be deteriorated.
　そこで、本発明の蒸着マスク１４の第３実施形態は、前述したように、薄片状の複数の金属部材１０を複数の開口パターン６の外側部分にて、フィルム４の一面４ａに散在させて設けたものである。これにより、フィルム４と金属部材１０との間の熱膨張率の差が緩和されて蒸着マスク１４の反りが抑制される。 Therefore, in the third embodiment of the vapor deposition mask 14 of the present invention, as described above, a plurality of flaky metal members 10 are provided scattered on one surface 4a of the film 4 at the outer portion of the plurality of opening patterns 6. It is a thing. Thereby, the difference of the thermal expansion coefficient between the film 4 and the metal member 10 is relieved, and the curvature of the vapor deposition mask 14 is suppressed.
　次に、上記蒸着マスク１４の第３実施形態の製造方法について説明する。
　先ず、図３５（ａ）に示すように、平坦面を有する図示省略のステージ上に例えば静電吸着して保持された可視光を透過する厚みが１５μｍ程度の、例えばポリイミドのフィルム４の一面４ａに、同図（ｂ）に示すようにスパッタリング等の公知の成膜技術により５０ｎｍ程度の厚みの例えばニッケル（Ｎｉ）等からなる磁性材料の金属膜の下地層５２を被着する。この場合、下地層５２は、磁性材料に限られず、良電導性の非磁性材料であってもよい。 Next, a manufacturing method of the third embodiment of the vapor deposition mask 14 will be described.
First, as shown in FIG. 35 (a), one surface 4a of, for example, a polyimide film 4 having a thickness of about 15 μm that transmits visible light, for example, electrostatically attracted and held on a stage (not shown) having a flat surface. Further, as shown in FIG. 2B, a base layer 52 of a metal film made of a magnetic material made of nickel (Ni) or the like having a thickness of about 50 nm is deposited by a known film forming technique such as sputtering. In this case, the underlayer 52 is not limited to a magnetic material, and may be a non-magnetic material with good electrical conductivity.
　次に、図３５（ｃ）に示すように、下地層５２上に１５μｍ程度の厚みのレジスト５３（感光性材料）を例えばスピンコートする。 Next, as shown in FIG. 35C, a resist 53 (photosensitive material) having a thickness of about 15 μm is spin-coated on the underlayer 52, for example.
　次いで、図３５（ｄ）に示すように、フォトマスク５４を使用してレジスト５３を露光し、同図（ｅ）に示すように現像して、レジスト５３の膜面に下地層５２に達する複数の開口５９をランダムに配置して形成する。この場合、レジスト５３がポジ型であるときには、フォトマスク５４は、上記複数の開口５９に対応した部分を遮光するものであり、レジスト５３がネガ型であるときには、使用するフォトマスク５４は、上記複数の開口５９に対応した部分を開口したものである。 Next, as shown in FIG. 35 (d), the resist 53 is exposed using a photomask 54, developed as shown in FIG. 35 (e), and a plurality of layers reaching the underlayer 52 on the film surface of the resist 53. The openings 59 are randomly arranged. In this case, when the resist 53 is a positive type, the photomask 54 shields light from portions corresponding to the plurality of openings 59. When the resist 53 is a negative type, the photomask 54 to be used is A portion corresponding to the plurality of openings 59 is opened.
　続いて、図３５（ｆ）に示すように、開口５９内にニッケル（Ｎｉ）等の金属部材１０の薄膜を１５μｍ程度の厚みにメッキ形成する。 Subsequently, as shown in FIG. 35 (f), a thin film of a metal member 10 such as nickel (Ni) is plated in the opening 59 to a thickness of about 15 μm.
　さらに、図３５（ｇ）に示すように、レジスト５３を剥離した後、同図（ｈ）に示すように、該金属部材１０周囲の下地層５２をエッチングして除去する。これにより、図３６（ａ）に示すように、フィルム４の一面に膜片状の複数の金属部材１０がランダムに散在したマスク用部材１１が形成される。 Further, as shown in FIG. 35 (g), after the resist 53 is peeled off, the underlying layer 52 around the metal member 10 is removed by etching as shown in FIG. 35 (h). Thereby, as shown in FIG. 36A, a mask member 11 in which a plurality of film-like metal members 10 are randomly scattered on one surface of the film 4 is formed.
　その後、マスク用部材１１のフィルム４を基準基板３８上に密着させた状態で、例えば図３６（ｂ）に示すレーザ光Ｌを上記基準基板３８の基準パターン４３に対応したフィルム４の部分に照射し、フィルム４に開口パターン６を形成する。さらに、同図（ｃ）に示すようにレーザ光Ｌをマスク用部材１１に対して相対的に同図中の矢印方向に上記基準パターン４３の同方向の配列ピッチと同じ距離だけステップ移動しながらフィルム４を加工し、複数の開口パターン６を形成する。これにより、図３３に示す蒸着マスク１４が完成する。この場合、図９に示すレーザ加工装置を使用して開口パターン６をレーザ加工するとよい。 Thereafter, with the film 4 of the mask member 11 in close contact with the reference substrate 38, for example, the laser light L shown in FIG. 36B is irradiated to the portion of the film 4 corresponding to the reference pattern 43 of the reference substrate 38. Then, the opening pattern 6 is formed on the film 4. Further, as shown in FIG. 6C, the laser beam L is moved stepwise in the direction of the arrow relative to the mask member 11 by the same distance as the arrangement pitch of the reference patterns 43 in the same direction. The film 4 is processed to form a plurality of opening patterns 6. Thereby, the vapor deposition mask 14 shown in FIG. 33 is completed. In this case, the opening pattern 6 may be laser processed using the laser processing apparatus shown in FIG.
　上記第３実施形態においては、フィルム４の一面４ａに薄片状の複数の金属部材１０をランダムに散在させてマスク用部材１１を形成しているので、開口パターン６の配列ピッチや形状の異なる蒸着マスク１４に対してもマスク用部材１１を共通化することができる。したがって、蒸着マスク１４の製造コストを低減することができる。 In the third embodiment, since the mask member 11 is formed by randomly dispersing a plurality of flaky metal members 10 on one surface 4a of the film 4, vapor deposition with different arrangement pitches and shapes of the opening patterns 6 is performed. The mask member 11 can be shared by the mask 14. Therefore, the manufacturing cost of the vapor deposition mask 14 can be reduced.
　なお、上記第３実施形態においては、フィルム４の一面４ａに薄片状の複数の金属部材１０がランダムに散在している場合について説明したが、本発明はこれに限られず、複数の金属部材１０は、図３７に示すように、フィルム４のストライプ状の開口パターン６の長軸に平行な外側部分に長軸に平行に並べて設けられてもよい。この場合、複数の金属部材１０は、一定の配列ピッチで配置されてもよい。これにより、第１の磁気チャック４２に対する吸着力を増してフィルム４と基板１との密着性をより向上することができる。ただし、この場合、形成されるマスク用部材１１は、特定の蒸着マスク専用となる。 In the third embodiment, the case has been described where a plurality of thin metal members 10 are randomly scattered on one surface 4a of the film 4. However, the present invention is not limited to this, and the plurality of metal members 10 are scattered. 37 may be provided in parallel with the long axis on the outer side of the striped opening pattern 6 of the film 4 parallel to the long axis. In this case, the plurality of metal members 10 may be arranged at a constant arrangement pitch. Thereby, the attraction | suction force with respect to the 1st magnetic chuck | zipper 42 can be increased, and the adhesiveness of the film 4 and the board | substrate 1 can be improved more. However, in this case, the mask member 11 to be formed is dedicated to a specific vapor deposition mask.
　次に、本発明による蒸着マスク１４の第２又は第３実施形態を使用して、ＴＦＴ基板１上に一定形状の複数種の薄膜パターンとしてＲ（赤色）有機ＥＬ層、Ｇ（緑色）有機ＥＬ層及びＢ（青色）有機ＥＬ層を形成して有機ＥＬ表示装置を製造する方法について説明する。
　最初に、図３８及び図３９を参照してＴＦＴ基板１上にＲ有機ＥＬ層３Ｒを形成する場合について説明する。この場合、先ず、図３８（ａ）に示すように、第２の磁気チャック４４に吸着して保持された蒸着マスク１４を第１の磁気チャック４２上に載置されたＴＦＴ基板１の上方に位置付け、同図（ｂ）に示すように、マスク側アライメントマーク４０とＲ用基板側アライメントマークとを顕微鏡により観察しながら、両マークが一定の位置関係となるように調整して蒸着マスク１４とＴＦＴ基板１とを位置合わせした後、ＴＦＴ基板１上にフィルム４を密着させる。これにより、蒸着マスク１４の開口パターン６がＴＦＴ基板１のＲ対応アノード電極２Ｒ上に位置付けられることになる。 Next, using the second or third embodiment of the vapor deposition mask 14 according to the present invention, an R (red) organic EL layer and a G (green) organic EL are formed on the TFT substrate 1 as a plurality of types of thin film patterns having a fixed shape. A method of manufacturing an organic EL display device by forming a layer and a B (blue) organic EL layer will be described.
First, the case where the R organic EL layer 3 </ b> R is formed on the TFT substrate 1 will be described with reference to FIGS. 38 and 39. In this case, first, as shown in FIG. 38A, the vapor deposition mask 14 held by being attracted to the second magnetic chuck 44 is placed above the TFT substrate 1 placed on the first magnetic chuck 42. Positioning and observing the mask-side alignment mark 40 and the R substrate-side alignment mark with a microscope, as shown in FIG. After the alignment with the TFT substrate 1, the film 4 is brought into close contact with the TFT substrate 1. Thereby, the opening pattern 6 of the vapor deposition mask 14 is positioned on the R corresponding anode electrode 2 </ b> R of the TFT substrate 1.
　その後、図３８（ｃ）に示すように、第１の磁気チャック４２の電磁石５６をオンすると共に第２の磁気チャック４４の電磁石５６をオフし、第１の磁気チャック４２により蒸着マスク１４の金属部材１０を吸着して蒸着マスク１４を第２の磁気チャック４４からＴＦＴ基板１上に移す。 Thereafter, as shown in FIG. 38C, the electromagnet 56 of the first magnetic chuck 42 is turned on and the electromagnet 56 of the second magnetic chuck 44 is turned off. The member 10 is attracted to move the vapor deposition mask 14 from the second magnetic chuck 44 onto the TFT substrate 1.
　次に、図３９（ａ）に示すように、ＴＦＴ基板１と蒸着マスク１４とを一体的に第１の磁気チャック４２に保持した状態で図示省略の真空蒸着装置の真空槽内に設置し、蒸着マスク１４の開口パターン６を介してＴＦＴ基板１のＲ対応アノード電極２Ｒ上のＲ有機ＥＬ層形成領域にＲ有機ＥＬ層３Ｒを真空蒸着する。 Next, as shown in FIG. 39A, the TFT substrate 1 and the vapor deposition mask 14 are integrally held in the first magnetic chuck 42 and placed in a vacuum chamber of a vacuum vapor deposition apparatus (not shown). The R organic EL layer 3 </ b> R is vacuum-deposited on the R organic EL layer forming region on the R corresponding anode electrode 2 </ b> R of the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 14.
　次いで、真空槽内から第１の磁気チャック４２を取り出し、図３９（ｂ）に示すように、蒸着マスク１４上に第２の磁気チャック４４を置き、同図（ｃ）に示すように第２の磁気チャック４４の電磁石５６をオンすると共に第１の磁気チャック４２の電磁石５６をオフし、蒸着マスク１４の金属部材１０を第２の磁気チャック４４により吸着して蒸着マスク１４をＴＦＴ基板１側から第２の磁気チャック４４側に移す。これにより、ＴＦＴ基板１のＲ対応アノード電極２Ｒ上にＲ有機ＥＬ層３Ｒが形成される。 Next, the first magnetic chuck 42 is taken out from the vacuum chamber, and the second magnetic chuck 44 is placed on the vapor deposition mask 14 as shown in FIG. 39B, and the second magnetic chuck 44 is placed as shown in FIG. The electromagnet 56 of the magnetic chuck 44 is turned on and the electromagnet 56 of the first magnetic chuck 42 is turned off, and the metal member 10 of the vapor deposition mask 14 is attracted by the second magnetic chuck 44 so that the vapor deposition mask 14 is attached to the TFT substrate 1 side. To the second magnetic chuck 44 side. Thereby, the R organic EL layer 3 </ b> R is formed on the R corresponding anode electrode 2 </ b> R of the TFT substrate 1.
　次に、図４０及び図４１を参照してＴＦＴ基板１上にＧ有機ＥＬ層を形成する場合について説明する。この場合、先ず、図４０（ａ）に示すように、第２の磁気チャック４４に吸着して保持された蒸着マスク１４を第１の磁気チャック４２上に載置されたＴＦＴ基板１の上方に位置付け、同図（ｂ）に示すように、マスク側アライメントマーク４０とＧ用基板側アライメントマークとを顕微鏡により観察しながら、両マークが一定の位置関係となるように調整して蒸着マスク１４とＴＦＴ基板１とを位置合わせした後、ＴＦＴ基板１上にフィルム４を密着させる。これにより、蒸着マスク１４の開口パターン６がＴＦＴ基板１のＧ対応アノード電極２Ｇ上に位置付けられることになる。 Next, the case where the G organic EL layer is formed on the TFT substrate 1 will be described with reference to FIGS. In this case, first, as shown in FIG. 40A, the vapor deposition mask 14 that is attracted and held by the second magnetic chuck 44 is placed above the TFT substrate 1 placed on the first magnetic chuck 42. Positioning and observing the mask-side alignment mark 40 and the G substrate-side alignment mark with a microscope, as shown in FIG. After the alignment with the TFT substrate 1, the film 4 is brought into close contact with the TFT substrate 1. Thereby, the opening pattern 6 of the vapor deposition mask 14 is positioned on the G corresponding anode electrode 2G of the TFT substrate 1.
　その後、図４０（ｃ）に示すように、第１の磁気チャック４２の電磁石５６をオンすると共に第２の磁気チャック４４の電磁石５６をオフし、第１の磁気チャック４２により蒸着マスク１４の金属部材１０を吸着して蒸着マスク１４を第２の磁気チャック４４からＴＦＴ基板１上に移す。 Thereafter, as shown in FIG. 40C, the electromagnet 56 of the first magnetic chuck 42 is turned on and the electromagnet 56 of the second magnetic chuck 44 is turned off. The member 10 is attracted to move the vapor deposition mask 14 from the second magnetic chuck 44 onto the TFT substrate 1.
　次に、図４１（ａ）に示すように、ＴＦＴ基板１と蒸着マスク１４とを一体的に第１の磁気チャック４２に保持した状態で真空蒸着装置の真空槽内に設置し、蒸着マスク１４の開口パターン６を介してＴＦＴ基板１のＧ対応アノード電極２Ｇ上のＧ有機ＥＬ層形成領域にＧ有機ＥＬ層３Ｇを真空蒸着する。 Next, as shown in FIG. 41A, the TFT substrate 1 and the vapor deposition mask 14 are integrally held in the first magnetic chuck 42 and installed in the vacuum chamber of the vacuum vapor deposition apparatus. The G organic EL layer 3G is vacuum-deposited on the G organic EL layer forming region on the G corresponding anode electrode 2G of the TFT substrate 1 through the opening pattern 6.
　次いで、真空槽内から第１の磁気チャック４２を取り出し、図４１（ｂ）に示すように蒸着マスク１４上に第２の磁気チャック４４を置き、同図（ｃ）に示すように第２の磁気チャック４４の電磁石５６をオンすると共に第１の磁気チャック４２の電磁石５６をオフし、蒸着マスク１４の金属部材１０を第２の磁気チャック４４により吸着して蒸着マスク１４をＴＦＴ基板１側から第２の磁気チャック４４側に移す。これにより、ＴＦＴ基板１のＧ対応アノード電極２Ｇ上にＧ有機ＥＬ層３Ｇが形成される。 Next, the first magnetic chuck 42 is taken out from the vacuum chamber, the second magnetic chuck 44 is placed on the vapor deposition mask 14 as shown in FIG. 41B, and the second magnetic chuck 44 is placed as shown in FIG. The electromagnet 56 of the magnetic chuck 44 is turned on and the electromagnet 56 of the first magnetic chuck 42 is turned off, and the metal member 10 of the vapor deposition mask 14 is attracted by the second magnetic chuck 44 to bring the vapor deposition mask 14 from the TFT substrate 1 side. Move to the second magnetic chuck 44 side. Thereby, the G organic EL layer 3G is formed on the G corresponding anode electrode 2G of the TFT substrate 1.
　次に、図４２及び図４３を参照してＴＦＴ基板１上にＢ有機ＥＬ層を形成する場合について説明する。この場合、先ず、図４２（ａ）に示すように、第２の磁気チャック４４に吸着して保持された蒸着マスク１４を第１の磁気チャック４２上に載置されたＴＦＴ基板１の上方に位置付け、同図（ｂ）に示すように、マスク側アライメントマーク４０とＢ用基板側アライメントマークとを顕微鏡により観察しながら、両マークが一定の位置関係となるように調整して蒸着マスク１４とＴＦＴ基板１とを位置合わせした後、ＴＦＴ基板１上にフィルム４を密着させる。これにより、蒸着マスク１４の開口パターン６がＴＦＴ基板１のＢ対応アノード電極２Ｂ上に位置付けられることになる。 Next, the case where the B organic EL layer is formed on the TFT substrate 1 will be described with reference to FIGS. In this case, first, as shown in FIG. 42A, the vapor deposition mask 14 that is attracted and held by the second magnetic chuck 44 is placed above the TFT substrate 1 placed on the first magnetic chuck 42. Positioning, while observing the mask side alignment mark 40 and the B substrate side alignment mark with a microscope, as shown in FIG. After the alignment with the TFT substrate 1, the film 4 is brought into close contact with the TFT substrate 1. Thereby, the opening pattern 6 of the vapor deposition mask 14 is positioned on the B corresponding anode electrode 2 </ b> B of the TFT substrate 1.
　その後、図４２（ｃ）に示すように、第１の磁気チャック４２の電磁石５６をオンすると共に第２の磁気チャック４４の電磁石５６をオフし、第１の磁気チャック４２により蒸着マスク１４の金属部材１０を吸着して蒸着マスク１４を第２の磁気チャック４４からＴＦＴ基板１上に移す。 After that, as shown in FIG. 42C, the electromagnet 56 of the first magnetic chuck 42 is turned on and the electromagnet 56 of the second magnetic chuck 44 is turned off. The member 10 is attracted to move the vapor deposition mask 14 from the second magnetic chuck 44 onto the TFT substrate 1.
　次に、図４３（ａ）に示すように、ＴＦＴ基板１と蒸着マスク１４とを一体的に第１の磁気チャック４２に保持した状態で真空蒸着装置の真空槽内に設置し、蒸着マスク１４の開口パターン６を介してＴＦＴ基板１のＢ対応アノード電極２Ｂ上のＢ有機ＥＬ層形成領域にＢ有機ＥＬ層３Ｂを真空蒸着する。 Next, as shown in FIG. 43A, the TFT substrate 1 and the vapor deposition mask 14 are integrally held in the first magnetic chuck 42 and installed in the vacuum chamber of the vacuum vapor deposition apparatus. The B organic EL layer 3B is vacuum-deposited on the B organic EL layer forming region on the B corresponding anode electrode 2B of the TFT substrate 1 through the opening pattern 6.
　次いで、真空槽内から第１の磁気チャック４２を取り出し、図１１（ｂ）に示すように、蒸着マスク１４上に第２の磁気チャック４４を置き、同図（ｃ）に示すように第２の磁気チャック４４の電磁石５６をオンすると共に第１の磁気チャック４２の電磁石５６をオフし、蒸着マスク１４の金属部材１０を第２の磁気チャック４４により吸着して蒸着マスク１４をＴＦＴ基板１上から第２の磁気チャック４４側に移す。これにより、ＴＦＴ基板１のＢ対応アノード電極２Ｂ上にＢ有機ＥＬ層３Ｂが形成される。 Next, the first magnetic chuck 42 is taken out of the vacuum chamber, and the second magnetic chuck 44 is placed on the vapor deposition mask 14 as shown in FIG. 11B, and the second magnetic chuck 44 is placed as shown in FIG. The electromagnet 56 of the magnetic chuck 44 is turned on and the electromagnet 56 of the first magnetic chuck 42 is turned off, and the metal member 10 of the vapor deposition mask 14 is attracted by the second magnetic chuck 44 so that the vapor deposition mask 14 is placed on the TFT substrate 1. To the second magnetic chuck 44 side. Thereby, the B organic EL layer 3B is formed on the B corresponding anode electrode 2B of the TFT substrate 1.
　また、蒸着マスク１４は、上述と同様にして第２の磁気チャック４４側から第１の磁気チャック４２側に移され、プラズマ処理装置内でプラズマ処理して蒸着マスク１４上に付着した有機ＥＬ蒸着材料が除去される。そして、このようにして洗浄された蒸着マスク１４は、再び第２の磁気チャック４４に移されて第２の磁気チャック４４に保持された状態で、又は第１の磁気チャック４２に保持されたままで保管される。したがって、蒸着マスク１４がよじれたり撓んだりして開口パターン６の形状が崩れたり位置がずれたりするおそれがない。 Further, the vapor deposition mask 14 is transferred from the second magnetic chuck 44 side to the first magnetic chuck 42 side in the same manner as described above, and is subjected to plasma treatment in the plasma processing apparatus and adhered to the vapor deposition mask 14. Material is removed. The vapor deposition mask 14 thus cleaned is transferred again to the second magnetic chuck 44 and held on the second magnetic chuck 44, or while being held on the first magnetic chuck 42. Stored. Therefore, there is no possibility that the vapor deposition mask 14 is twisted or bent and the shape of the opening pattern 6 is lost or displaced.
　なお、上記Ｒ有機ＥＬ層３Ｒ、Ｇ有機ＥＬ層３Ｇ及びＢ有機ＥＬ層３Ｂの形成工程は、同一の蒸着マスク１４を使用して一連の工程として実行することができる。 In addition, the formation process of the said R organic EL layer 3R, G organic EL layer 3G, and B organic EL layer 3B can be performed as a series of processes using the same vapor deposition mask 14.
　図４４は本発明による蒸着マスクの第４実施形態を示す図であり、（ａ）は平面図、（ｂ）は底面図、（ｃ）は（ａ）のＥ－Ｅ線断面矢視図、（ｄ）は（ｃ）の一部拡大図である。ここで、本発明による蒸着マスクの上記第４実施形態が第１～第３実施形態と異なる点は、フィルム４が図４４（ａ），（ｂ）に示すように後述の金属部材１０の細長状のブリッジ３９に対応した位置で分離された複数の開口パターン６を備え、図４４（ｃ）に示すように、基板との接触面４ａに、金属部材１０の細長状のブリッジ３９の形成位置に対応して該ブリッジ３９の長軸に平行な突条部６５が設けられている点である。 44A and 44B are views showing a fourth embodiment of the vapor deposition mask according to the present invention, in which FIG. 44A is a plan view, FIG. 44B is a bottom view, and FIG. 44C is a sectional view taken along line EE of FIG. (D) is a partially enlarged view of (c). Here, the fourth embodiment of the vapor deposition mask according to the present invention is different from the first to third embodiments in that the film 4 is an elongated metal member 10 described later as shown in FIGS. 44 (a) and 44 (b). A plurality of opening patterns 6 separated at a position corresponding to the bridge 39, and as shown in FIG. 44 (c), the formation position of the elongated bridge 39 of the metal member 10 on the contact surface 4a with the substrate Corresponding to this, a ridge 65 parallel to the long axis of the bridge 39 is provided.
　また、上記金属部材１０には、図４４（ａ）に示すように、有機ＥＬ層の形成に影響を及ぼさない予め定められた部分に設けられたブリッジ３９により分離された複数の開口部９が形成されている。これにより、金属部材１０の剛性が増し、撓みを抑えることができる。したがって、蒸着マスク１４と基板との位置合わせ精度をより向上して薄膜パターンの形成精度をより向上することができる。 Further, as shown in FIG. 44A, the metal member 10 has a plurality of openings 9 separated by bridges 39 provided at predetermined portions that do not affect the formation of the organic EL layer. Is formed. Thereby, the rigidity of the metal member 10 is increased and bending can be suppressed. Therefore, the alignment accuracy between the vapor deposition mask 14 and the substrate can be further improved, and the formation accuracy of the thin film pattern can be further improved.
　次に、このように構成された蒸着マスク１４の第４実施形態の製造について図４５を参照して説明する。
　先ず、図４５（ａ）に示すように、フィルム４の基板との接触面４ａとは反対側の面４ｂと、基板の薄膜パターン形成領域に対応して薄膜パターンよりも形状が大きく、細長状の複数のブリッジ３９により分離された貫通する複数の開口部９を形成した例えば磁性材料からなる金属部材１０とを、同図に矢印で示すように面接合し、同図（ｂ）に示すマスク用部材１１を形成する。 Next, manufacture of 4th Embodiment of the vapor deposition mask 14 comprised in this way is demonstrated with reference to FIG.
First, as shown in FIG. 45 (a), the shape of the film 4 is larger than the thin film pattern corresponding to the surface 4b opposite to the contact surface 4a with the substrate and the thin film pattern formation region of the substrate. A metal member 10 made of, for example, a magnetic material and having a plurality of through-holes 9 separated by a plurality of bridges 39 is surface-bonded as indicated by arrows in the figure, and the mask shown in FIG. The member 11 is formed.
　上記面接合は、好ましくは、図４６に示すように、一部（例えば周縁領域）に金属膜４６をコーティングしたフィルム４を使用して、該金属膜４６上に塗布されたノンフラックス半田４７によりフィルム４を金属部材１０にノンフラックス半田付けするとよい。また、大面積の基板上の複数領域に薄膜パターン群を形成する場合には、図４７に示すように、基板上の上記複数領域に対応したフィルム４の複数領域６６の周縁領域に金属膜４６をコーティングし、該金属膜４６上に上記各領域６６を囲んでノンフラックス半田４７を塗布したフィルム４を使用するとよい。このようなフィルム４と金属部材１０とをノンフラックス半田付けして形成した蒸着マスク１４を使用すれば、例えば薄膜パターンとしての有機ＥＬ層を真空蒸着して形成する際に半田からアウトガスが発生せず、アウトガスの不純物により有機ＥＬ層がダメージを受けるおそれがない。なお、図４６及び図４７に示す符号６７は、金属部材１０に形成されたマスク側アライメントマーク４０に対応して形成された開口であり、フィルム４を透過して基板上の基板側アライメントマークを観察可能にするためのものである。 The surface bonding is preferably performed by using non-flux solder 47 applied on the metal film 46 using a film 4 having a part (for example, a peripheral region) coated with the metal film 46 as shown in FIG. The film 4 may be non-flux soldered to the metal member 10. Further, when forming a thin film pattern group in a plurality of regions on a large-area substrate, as shown in FIG. 47, a metal film 46 is formed in the peripheral region of the plurality of regions 66 of the film 4 corresponding to the plurality of regions on the substrate. It is preferable to use the film 4 in which the non-flux solder 47 is applied on the metal film 46 so as to surround the regions 66. If the deposition mask 14 formed by non-flux soldering the film 4 and the metal member 10 is used, outgas is generated from the solder when the organic EL layer as a thin film pattern is formed by vacuum deposition, for example. In addition, the organic EL layer is not damaged by the outgas impurities. Reference numeral 67 shown in FIGS. 46 and 47 is an opening formed corresponding to the mask side alignment mark 40 formed on the metal member 10, and transmits the substrate side alignment mark on the substrate through the film 4. It is for making observation possible.
　上記面接合には、前述したような金属部材１０にフィルム状の樹脂を圧着させる方法、金属部材１０にフィルム状の樹脂を接着させる方法、半乾燥状態の樹脂溶液に金属部材１０を圧着する方法、又は金属部材１０に溶液状の樹脂をコーティングする方法等が含まれる。 For the above-described surface bonding, a method of pressure-bonding a film-like resin to the metal member 10 as described above, a method of bonding a film-like resin to the metal member 10, and a method of pressure-bonding the metal member 10 to a semi-dried resin solution Or a method of coating the metal member 10 with a solution-like resin.
　次いで、図４５（ｃ）に示すように、マスク用部材１１を基準パターン４３を形成した基準基板３８（例えば、有機ＥＬ表示用ＴＦＴ基板のダミー基板でもよい）上に載置した後、マスク側アライメントマーク４０と図示省略の基板側アライメントマークとを例えば顕微鏡により観察しながら、各マークが一定の位置関係を成すように調整してマスク用部材１１と基準基板３８との位置合わせを行う。 Next, as shown in FIG. 45C, after the mask member 11 is placed on a reference substrate 38 (for example, a dummy substrate of an organic EL display TFT substrate) on which the reference pattern 43 is formed, the mask side While observing the alignment mark 40 and the substrate-side alignment mark (not shown) with, for example, a microscope, the mask member 11 and the reference substrate 38 are aligned by adjusting each mark so as to form a certain positional relationship.
　続いて、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザを使用して、図４５（ｄ）に示すように、金属部材１０の開口部９内に位置するフィルム４の部分で、上記基準基板３８の基準パターン４３上の薄膜パターン形成領域に対応したフィルム４の部分にエネルギー密度が０．１Ｊ／ｃｍ２～２０Ｊ／ｃｍ２のレーザ光Ｌを照射し、同図（ｅ）に示すように当該部分に２μｍ程度の薄い層を残して一定深さの穴部５を形成する。このような紫外線のレーザ光Ｌを使用すれば、レーザ光Ｌの光エネルギーによりフィルム４の炭素結合が一瞬のうちに破壊されて除去されるため、残渣の無いクリーンな穴あけ加工を行うことができる。 Subsequently, by using an excimer laser having a wavelength of 400 nm or less, for example, KrF248 nm, as shown in FIG. 45 (d), the reference substrate 38 at the portion of the film 4 positioned in the opening 9 of the metal member 10 is used. energy density irradiated with laser light L of 0.1J / cm 2 ~ 20J / cm 2 in the portion of the film 4 corresponding to the thin film pattern forming region on the reference pattern 43, the as shown in FIG. (e) A hole 5 having a constant depth is formed leaving a thin layer of about 2 μm in the portion. If such an ultraviolet laser beam L is used, the carbon bond of the film 4 is broken and removed instantly by the optical energy of the laser beam L, so that clean drilling without residue can be performed. .
　その後、図４５（ｆ）に示すように、フィルム４の基準基板３８との接触面４ａの突条部６５を形成しようとする部分をマスキングして、フィルム４の材料に応じて露光、現像及びエッチングすることにより一定深さの溝を形成し、金属部材１０のブリッジ３９の形成位置に対応した上記接触面４ａにブリッジ３９の長軸に平行な突条部６５を形成する。このとき同時に、上記穴部５が貫通して開口パターン６が形成される。これにより、本発明の蒸着マスク１４の第４実施形態が完成する。 Thereafter, as shown in FIG. 45 (f), a portion of the contact surface 4a of the contact surface 4a with the reference substrate 38 of the film 4 is masked to be exposed, developed and developed according to the material of the film 4. A groove having a certain depth is formed by etching, and a ridge 65 parallel to the long axis of the bridge 39 is formed on the contact surface 4a corresponding to the position where the bridge 39 of the metal member 10 is formed. At the same time, the hole 5 penetrates and an opening pattern 6 is formed. Thereby, 4th Embodiment of the vapor deposition mask 14 of this invention is completed.
　次に、本発明の蒸着マスク１４の第４実施形態を使用して行う薄膜パターン形成方法について、図４８～図５０を参照して説明する。ここでは、基板が、図５１に示すように薄膜パターンとしてのＲ有機ＥＬ層３Ｒ、Ｇ有機ＥＬ層３Ｇ及びＢ有機ＥＬ層３Ｂの形成領域（各色対応のアノード電極２Ｒ，２Ｇ，２Ｂ上の領域）の各境界部に、成膜された各色有機ＥＬ層３Ｒ～３Ｂの面よりも突出するように高さが設定された例えば窒化シリコン（ＳＩＮ）膜から成る隔壁６８が予め設けられた有機ＥＬ表示装置用のＴＦＴ基板１である場合について説明する。 Next, a thin film pattern forming method performed using the fourth embodiment of the vapor deposition mask 14 of the present invention will be described with reference to FIGS. Here, as shown in FIG. 51, the substrate is formed with R organic EL layers 3R, G organic EL layers 3G, and B organic EL layers 3B as thin film patterns (regions on anode electrodes 2R, 2G, and 2B corresponding to the respective colors). ) Is provided in advance with partition walls 68 made of, for example, a silicon nitride (SIN) film whose height is set so as to protrude from the surfaces of the formed organic EL layers 3R to 3B. The case of the TFT substrate 1 for a display device will be described.
　先ず、第１ステップにおいては、図４８（ａ）に示すようにＴＦＴ基板１上に蒸着マスク１４を載置し、蒸着マスク１４に形成されたマスク側アライメントマーク４０とＴＦＴ基板１に予め形成された図示省略の基板側アライメントマークとを顕微鏡により観察しながら、両マークが予め定められた位置関係となるように調整して蒸着マスク１４とＴＦＴ基板１とを位置合わせする。これにより、同図（ａ）に示すように、蒸着マスク１４の開口パターン６がＴＦＴ基板１のＲ対応のアノード電極２Ｒ上に合致することになる。 First, in the first step, as shown in FIG. 48A, the vapor deposition mask 14 is placed on the TFT substrate 1, and the mask side alignment mark 40 formed on the vapor deposition mask 14 and the TFT substrate 1 are formed in advance. While the substrate-side alignment mark (not shown) is observed with a microscope, the vapor deposition mask 14 and the TFT substrate 1 are aligned by adjusting the two marks so as to have a predetermined positional relationship. As a result, the opening pattern 6 of the vapor deposition mask 14 coincides with the R corresponding anode electrode 2R of the TFT substrate 1 as shown in FIG.
　第２ステップにおいては、蒸着マスク１４とＴＦＴ基板１とを密着一体化させた状態で例えば真空蒸着装置の真空槽内に設置し、図４８（ｂ）に示すように、ＴＦＴ基板１のＲ対応のアノード電極２Ｒ上に蒸着マスク１４の開口パターン６を介してＲ有機ＥＬ層３Ｒを蒸着形成する。 In the second step, the deposition mask 14 and the TFT substrate 1 are in close contact and integrated, for example, in a vacuum chamber of a vacuum deposition apparatus, and as shown in FIG. The R organic EL layer 3R is formed by vapor deposition on the anode electrode 2R through the opening pattern 6 of the vapor deposition mask 14.
　第３ステップにおいては、蒸着マスク１４とＴＦＴ基板１とを密着一体化したものを真空蒸着装置の真空槽内から取り出し、蒸着マスク１４を、図４９（ａ）に矢印で示すように各色有機ＥＬ層３Ｒ～３Ｂの配列ピッチと同寸法だけ各色有機ＥＬ層３Ｒ～３Ｂの並び方向にＴＦＴ基板１上をスライドさせて移動する。この場合、顕微鏡下でマスク面を観察しながら、蒸着マスク１４の開口パターン６がＧ対応アノード電極２Ｇ上に合致するように調整してもよく、又はＴＦＴ基板に形成したＧ用基板側アライメントマークとマスク側アライメントマーク４０とが合致するように調整してもよい。 In the third step, the vapor deposition mask 14 and the TFT substrate 1 that are in close contact with each other are taken out from the vacuum chamber of the vacuum vapor deposition apparatus, and the vapor deposition mask 14 is placed in each color organic EL as shown by arrows in FIG. The TFT substrate 1 is slid and moved in the arrangement direction of the respective color organic EL layers 3R to 3B by the same dimension as the arrangement pitch of the layers 3R to 3B. In this case, while observing the mask surface under a microscope, the opening pattern 6 of the vapor deposition mask 14 may be adjusted so as to coincide with the G corresponding anode electrode 2G, or the G substrate side alignment mark formed on the TFT substrate. And the mask side alignment mark 40 may be adjusted.
　第４ステップにおいては、上記第２ステップと同様にして、マスク１とＴＦＴ基板１とを密着一体化させた状態で例えば真空蒸着装置の真空槽内に設置し、図４９（ｂ）に示すように、ＴＦＴ基板１のＧ対応のアノード電極２Ｇ上に蒸着マスク１４の開口パターン６を介してＧ有機ＥＬ層３Ｇを蒸着形成する。 In the fourth step, as in the second step, the mask 1 and the TFT substrate 1 are in close contact and integrated, for example, in a vacuum chamber of a vacuum evaporation apparatus, as shown in FIG. 49 (b). Then, the G organic EL layer 3G is formed by vapor deposition on the anode electrode 2G corresponding to G of the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 14.
　第５ステップにおいては、上記第３ステップと同様にして、蒸着マスク１４とＴＦＴ基板１とを密着一体化したものを真空蒸着装置の真空槽内から取り出し、蒸着マスク１４を、図５０（ａ）に矢印で示すように各色有機ＥＬ層３Ｒ～３Ｂの配列ピッチと同寸法だけ各色有機ＥＬ層３Ｒ～３Ｂの並び方向にＴＦＴ基板１上をスライドさせて移動し、蒸着マスク１４の開口パターン６をＢ対応アノード電極２Ｂ上に合致させる。 In the fifth step, in the same manner as in the third step, the deposition mask 14 and the TFT substrate 1 that are closely integrated are taken out from the vacuum chamber of the vacuum deposition apparatus, and the deposition mask 14 is removed as shown in FIG. As shown by the arrows in FIG. 4, the TFT substrate 1 is slid and moved in the arrangement direction of the color organic EL layers 3R to 3B by the same dimension as the arrangement pitch of the color organic EL layers 3R to 3B. It is made to match on B corresponding anode electrode 2B.
　第６ステップにおいては、上記第２又は第４ステップと同様にして、蒸着マスク１４とＴＦＴ基板１とを密着一体化させた状態で例えば真空蒸着装置の真空槽内に設置し、図５０（ｂ）に示すように、ＴＦＴ基板１のＧ対応のアノード電極２Ｇ上に蒸着マスク１４の開口パターン６を介してＢ有機ＥＬ層３Ｂを蒸着形成する。これにより、一枚のマスク１を使用して複数色の有機ＥＬ層３Ｒ～３Ｂを順次形成することができ、有機ＥＬ層形成工程を効率よく行なうことができる。 In the sixth step, in the same manner as in the second or fourth step, the vapor deposition mask 14 and the TFT substrate 1 are in close contact and integrated, for example, in a vacuum chamber of a vacuum vapor deposition apparatus. As shown in FIG. 5B, the B organic EL layer 3B is formed by vapor deposition on the anode electrode 2G corresponding to G of the TFT substrate 1 through the opening pattern 6 of the vapor deposition mask 14. As a result, the organic EL layers 3R to 3B of a plurality of colors can be sequentially formed using one mask 1, and the organic EL layer forming step can be performed efficiently.
　この場合、蒸着マスク１４を横方向にスライド移動する際には、フィルム４の面４ａが有機ＥＬ層３Ｒ，３Ｇに接触せず、且つフィルム４の面４ａに設けられた突条部６５が隔壁６８上を滑るので、フィルム４と隔壁６８との間の摩擦を低減することができる。したがって、蒸着マスク１４を安定してＴＦＴ基板１上をスライド移動させることができる。 In this case, when the vapor deposition mask 14 is slid in the horizontal direction, the surface 4a of the film 4 is not in contact with the organic EL layers 3R and 3G, and the protrusions 65 provided on the surface 4a of the film 4 are provided as partition walls. Since it slides on 68, the friction between the film 4 and the partition 68 can be reduced. Accordingly, the vapor deposition mask 14 can be stably slid on the TFT substrate 1.
　なお、以上の説明においては、薄膜パターンとして有機ＥＬ表示装置の有機ＥＬ層を形成方法について述べたが、本発明はこれに限られず、高精細な薄膜パターンを形成しようとするものであれば、液晶表示装置のカラーフィルターの形成、又は半導体基板の配線パターンの形成等、如何なるものにも適用することができる。 In the above description, the method for forming the organic EL layer of the organic EL display device as the thin film pattern has been described. However, the present invention is not limited to this, and any thin film pattern can be formed. The present invention can be applied to anything such as formation of a color filter of a liquid crystal display device or formation of a wiring pattern of a semiconductor substrate.
　１…基板
　４…フィルム
　６…開口パターン
　７，１４…蒸着マスク
　９…開口部
　１０…金属部材
　１１…マスク用部材
　３８…基準基板
　３９…ブリッジ
　４２…第１の磁気チャック
　４３…基準パターン
　４４…第２の磁気チャック
　６８…突条部 DESCRIPTION OF SYMBOLS 1 ... Board | substrate 4 ... Film 6 ... Opening pattern 7, 14 ... Evaporation mask 9 ... Opening part 10 ... Metal member 11 ... Mask member 38 ... Reference board 39 ... Bridge 42 ... 1st magnetic chuck 43 ... Reference pattern 44 ... 1st 2 magnetic chuck 68 ... ridge

Claims (43)

  1. 　基板上に一定形状の薄膜パターンを蒸着形成するための蒸着マスクであって、
    　前記基板上に予め定められた前記薄膜パターンの形成領域に対応して、該薄膜パターンと形状寸法の同じ貫通する開口パターンを形成した可視光を透過する樹脂製のフィルムを備えて構成されたことを特徴とする蒸着マスク。     A vapor deposition mask for vapor-depositing a thin film pattern having a fixed shape on a substrate,
    Corresponding to a predetermined formation region of the thin film pattern on the substrate, the substrate is configured to include a resin film that transmits visible light and has an opening pattern having the same shape and dimension as the thin film pattern. Evaporation mask characterized by.
  2. 　前記フィルムの前記開口パターンの外側部分には、金属部材が設けられていることを特徴とする請求項１記載の蒸着マスク。 The vapor deposition mask according to claim 1, wherein a metal member is provided on an outer portion of the opening pattern of the film.
  3. 　前記金属部材は、前記開口パターンに対応して該開口パターンよりも形状寸法が大きい開口部を有し、前記フィルムの一面に密接された薄板であることを特徴とする請求項２記載の蒸着マスク。 3. The vapor deposition mask according to claim 2, wherein the metal member is a thin plate having an opening having a larger size than the opening pattern corresponding to the opening pattern, and being in close contact with one surface of the film. .
  4. 　前記金属部材は、前記フィルムの一面又は内部に分散させて設けられた複数の薄片であることを特徴とする請求項２記載の蒸着マスク。 3. The vapor deposition mask according to claim 2, wherein the metal member is a plurality of thin pieces dispersed on one surface or inside of the film.
  5. 　前記金属部材は、磁性材料からなることを特徴とする請求項２記載の蒸着マスク。 3. The vapor deposition mask according to claim 2, wherein the metal member is made of a magnetic material.
  6. 　前記磁性材料は、インバー又はインバー合金であることを特徴とする請求項５記載の蒸着マスク。 The vapor deposition mask according to claim 5, wherein the magnetic material is Invar or Invar alloy.
  7. 　前記金属部材は、非磁性材料からなることを特徴とする請求項２記載の蒸着マスク。 3. The vapor deposition mask according to claim 2, wherein the metal member is made of a nonmagnetic material.
  8. 　前記開口パターンは、前記フィルムの前記一面側の開口面積が前記薄膜パターンの面積と同じで、前記一面とは反対側の他面側の開口面積が前記一面側の開口面積よりも大きいことを特徴とする請求項２記載の蒸着マスク。 In the opening pattern, the opening area on the one surface side of the film is the same as the area of the thin film pattern, and the opening area on the other surface side opposite to the one surface is larger than the opening area on the one surface side. The vapor deposition mask according to claim 2.
  9. 　前記フィルムの前記一面側に備えられた前記金属部材を前記基板上に密着させて使用されることを特徴とする請求項８記載の蒸着マスク。 The vapor deposition mask according to claim 8, wherein the metal member provided on the one surface side of the film is used in close contact with the substrate.
  10. 　前記金属部材は、細長状の複数のブリッジにより分離された複数の前記開口部を備え、
    　前記フィルムは、前記複数の開口部に対応して複数の前記開口パターンを形成すると共に、前記基板に接触する他面側に、前記金属部材の前記ブリッジの形成位置に対応して該ブリッジの長軸に平行な突条部を備えたことを特徴とする請求項３記載の蒸着マスク。     The metal member includes a plurality of the openings separated by a plurality of elongated bridges,
    The film forms a plurality of the opening patterns corresponding to the plurality of openings, and has a length of the bridge corresponding to a position where the bridge of the metal member is formed on the other surface side in contact with the substrate. The vapor deposition mask according to claim 3, further comprising a protrusion parallel to the axis.
  11. 　前記フィルムは、ポリイミドであることを特徴とする請求項１～１０のいずれか１項に記載の蒸着マスク。 The evaporation mask according to any one of claims 1 to 10, wherein the film is polyimide.
  12. 　基板上に予め定められた薄膜パターンの形成領域に対応して、可視光を透過する樹脂製のフィルムに前記薄膜パターンと形状寸法の同じ貫通する開口パターンを形成して製造する蒸着マスクの製造方法であって、
    　前記薄膜パターンを成膜形成しようとする成膜対象の基板上、又は前記薄膜パターンと同じ配列ピッチで並べて、該薄膜パターンと形状寸法の同じ複数の基準パターンを設けた基準基板上に前記フィルムを密着する第１ステップと、
    　前記成膜対象の基板上又は前記基準基板上の前記薄膜パターンの形成領域又は前記基準パターンに対応する前記フィルムの部分を加工して、前記薄膜パターンと形状寸法の同じ開口パターンを形成する第２ステップと、
    を含むことを特徴とする蒸着マスクの製造方法。     Corresponding to a predetermined thin film pattern formation region on a substrate, a deposition mask manufacturing method for forming a through-hole pattern having the same shape and dimension as a thin film pattern on a resin film that transmits visible light. Because
    The thin film pattern is formed on the substrate to be formed, or arranged on the same arrangement pitch as the thin film pattern, and the film is placed on a reference substrate provided with a plurality of reference patterns having the same shape and dimensions as the thin film pattern. A first step to adhere,
    Forming an opening pattern having the same shape and dimension as the thin film pattern by processing a region of the thin film pattern on the film formation target substrate or the reference substrate or a portion of the film corresponding to the reference pattern; Steps,
    The manufacturing method of the vapor deposition mask characterized by including.
  13. 　前記第１ステップは、前記フィルムの一面に、前記薄膜パターンに対応して該薄膜パターンよりも形状寸法が大きい開口部を設けた金属部材を密接させてマスク用部材を形成した後、前記成膜対象の基板上又は前記基準基板上の前記薄膜パターンの形成領域又は前記基準パターンに対応した部分が前記開口部内に位置するように位置決めして行われることを特徴とする請求項１２記載の蒸着マスクの製造方法。 In the first step, a mask member is formed on one surface of the film by closely contacting a metal member provided with an opening having a shape dimension larger than that of the thin film pattern corresponding to the thin film pattern. 13. The vapor deposition mask according to claim 12, wherein the deposition mask is formed by positioning so that a thin film pattern formation region on the target substrate or the reference substrate or a portion corresponding to the reference pattern is located in the opening. Manufacturing method.
  14. 　前記マスク用部材は、一定の温度及び圧力の下で前記金属部材と前記フィルムとを熱圧着して形成されることを特徴とする請求項１３記載の蒸着マスクの製造方法。 The method for manufacturing a vapor deposition mask according to claim 13, wherein the mask member is formed by thermocompression bonding the metal member and the film under a constant temperature and pressure.
  15. 　前記マスク用部材は、前記金属部材に前記フィルムを接着させて形成されることを特徴とする請求項１３記載の蒸着マスクの製造方法。 14. The method of manufacturing a vapor deposition mask according to claim 13, wherein the mask member is formed by adhering the film to the metal member.
  16. 　前記マスク用部材は、平板状の基材の上面に塗布され、半乾燥状態にされたフィルム用樹脂に前記金属部材を圧着した後、前記樹脂を完全乾燥させて形成されることを特徴とする請求項１３記載の蒸着マスクの製造方法。 The mask member is formed by press-bonding the metal member to a film resin which is applied to the upper surface of a flat substrate and is semi-dried, and then completely drying the resin. The manufacturing method of the vapor deposition mask of Claim 13.
  17. 　前記マスク用部材は、平板状の基材の上面に載置された前記金属部材の上面にフィルム用樹脂溶液を塗布した後、乾燥してフィルム化することによって形成されることを特徴とする請求項１３記載の蒸着マスクの製造方法。 The mask member is formed by coating a resin solution for a film on an upper surface of the metal member placed on an upper surface of a flat substrate and then drying to form a film. Item 14. A method for producing a vapor deposition mask according to Item 13.
  18. 　前記マスク用部材は、前記フィルムの一面に前記金属部材をメッキ形成することにより形成されることを特徴とする請求項１３記載の蒸着マスクの製造方法。 14. The method of manufacturing a vapor deposition mask according to claim 13, wherein the mask member is formed by plating the metal member on one surface of the film.
  19. 　前記フィルムは、平坦面を有するステージ上に静電吸着して保持されたものであることを特徴とする請求項１８記載の蒸着マスクの製造方法。 The method for manufacturing a vapor deposition mask according to claim 18, wherein the film is held by electrostatic adsorption on a stage having a flat surface.
  20. 　前記フィルムは、平板な基材上に可視光を透過する樹脂を塗布した後、乾燥させて形成されたものであることを特徴とする請求項１８記載の蒸着マスクの製造方法。 19. The method of manufacturing a vapor deposition mask according to claim 18, wherein the film is formed by applying a resin that transmits visible light on a flat substrate and then drying the film.
  21. 　前記第１ステップは、前記マスク用部材の前記フィルムの面をエッチングして、少なくとも前記金属部材の前記開口部に対応した部分の前記フィルムの厚みを薄くした後に、前記成膜対象の基板又は前記基準基板に対する位置合わせが実施されることを特徴とする請求項１３記載の蒸着マスクの製造方法。 In the first step, the surface of the film of the mask member is etched to reduce the thickness of the film at least in a portion corresponding to the opening of the metal member, and then the substrate to be deposited or the The method of manufacturing a vapor deposition mask according to claim 13, wherein alignment with respect to a reference substrate is performed.
  22. 　前記金属部材は、磁性材料又は非磁性材料からなり、
    　前記第１ステップは、内部にチャック手段を備えたステージ上に前記成膜対象の基板又は前記基準基板を載置した後、前記チャック手段により前記金属部材を前記成膜対象の基板上又は前記基準基板上に吸着して前記フィルムを挟持することを特徴とする請求項１３記載の蒸着マスクの製造方法。     The metal member is made of a magnetic material or a non-magnetic material,
    In the first step, after the substrate to be deposited or the reference substrate is placed on a stage having a chuck means inside, the metal member is placed on the substrate to be deposited or the reference by the chuck means. The method of manufacturing a vapor deposition mask according to claim 13, wherein the film is sandwiched by being adsorbed on a substrate.
  23. 　前記第２ステップは、前記フィルムの部分にレーザ光を照射して実行されることを特徴とする請求項１２記載の蒸着マスクの製造方法。 13. The method of manufacturing a vapor deposition mask according to claim 12, wherein the second step is performed by irradiating the film portion with a laser beam.
  24. 　前記第２ステップは、一定のエネルギー密度のレーザ光を照射して前記フィルムを一定速度で加工して一定深さの穴部を形成した後、該穴部の底部にエネルギー密度を下げたレーザ光を照射して前記速度よりも遅い速度で加工して前記穴部を貫通させることを特徴とする請求項２３記載の蒸着マスクの製造方法。 In the second step, the laser beam is irradiated with a laser beam having a constant energy density to form a hole portion having a constant depth by processing the film at a constant speed, and then the laser beam having a reduced energy density at the bottom portion of the hole portion. 24. The method of manufacturing a vapor deposition mask according to claim 23, wherein the hole portion is penetrated by being processed at a speed slower than the speed by irradiating the film.
  25. 　前記エネルギー密度を下げたレーザ光の照射は、前記フィルムの炭素と反応し該炭素を気化させる反応性ガス雰囲気下で行われることを特徴とする請求項２４記載の蒸着マスクの製造方法。 25. The method of manufacturing a vapor deposition mask according to claim 24, wherein the irradiation with the laser beam with the energy density lowered is performed in a reactive gas atmosphere that reacts with carbon of the film and vaporizes the carbon.
  26. 　前記第２ステップは、一定のエネルギー密度のレーザ光を照射して前記フィルムに前記穴部を形成した後、前記フィルムの炭素と反応し該炭素を気化させる反応性ガスにより、又は反応性ガスをプラズマ化して生成されたラジカルイオンにより前記穴部の底部をエッチングし、該穴部を貫通させて前記開口パターンを形成することを特徴とする請求項１２記載の蒸着マスクの製造方法。 In the second step, after forming the hole in the film by irradiating a laser beam having a constant energy density, the reactive gas reacts with carbon of the film and vaporizes the carbon, or reactive gas is used. 13. The method of manufacturing a vapor deposition mask according to claim 12, wherein the opening pattern is formed by etching the bottom of the hole with radical ions generated by plasma, and penetrating the hole.
  27. 　前記基準基板は、透明基板の一面に前記基準パターンを設けたものであり、
    　前記第２ステップは、前記基準パターンを下側にしてステージ上に載置された前記基準基板の前記基準パターンが前記金属部材の前記開口部内に位置するように前記金属部材を前記基準基板に対して位置合わせした後、前記フィルムを前記基準基板の他面に密着させ、前記金属部材の前記開口部内の前記基準パターンに対応した前記フィルムの部分にレーザ光を照射して、前記開口パターンを形成することを特徴とする請求項１３記載の蒸着マスクの製造方法。     The reference substrate is provided with the reference pattern on one surface of a transparent substrate,
    In the second step, the metal member is placed on the reference substrate so that the reference pattern of the reference substrate placed on the stage with the reference pattern on the lower side is positioned in the opening of the metal member. After the alignment, the film is brought into close contact with the other surface of the reference substrate, and the portion of the film corresponding to the reference pattern in the opening of the metal member is irradiated with laser light to form the opening pattern. The method of manufacturing a vapor deposition mask according to claim 13, wherein:
  28. 　前記第２ステップは、前記金属部材、前記フィルム及び前記基準基板を一体的に前記基準パターンの並び方向に搬送しながら、前記レーザ光の照射位置に対して前記搬送方向上流側の位置を撮影可能に設けられた撮像手段で前記基準パターンを撮影し、該撮影画像に基づいて前記基準パターンを検出し、該検出時刻を基準にして前記レーザ光の照射タイミングを制御して実行されることを特徴とする請求項２７記載の蒸着マスクの製造方法。 In the second step, it is possible to photograph the position upstream in the transport direction with respect to the irradiation position of the laser beam while transporting the metal member, the film and the reference substrate integrally in the alignment direction of the reference pattern. The reference pattern is imaged by an imaging means provided in the image, the reference pattern is detected based on the captured image, and the laser light irradiation timing is controlled based on the detection time. The method for manufacturing a vapor deposition mask according to claim 27.
  29. 　前記第２ステップは、前記撮像手段の撮影画像に基づいて、前記金属部材の前記開口部の中心と前記基準基板の前記基準パターンの中心との間の位置ずれ量が許容値内であることを確認しながら実行されることを特徴とする請求項２８記載の蒸着マスクの製造方法。 In the second step, based on a photographed image of the imaging means, a positional deviation amount between the center of the opening of the metal member and the center of the reference pattern of the reference substrate is within an allowable value. The method for manufacturing a vapor deposition mask according to claim 28, wherein the method is performed while checking.
  30. 　前記第２ステップの後に、前記フィルムを前記基準基板から剥離することを特徴とする請求項２７記載の蒸着マスクの製造方法。 The method for manufacturing a vapor deposition mask according to claim 27, wherein the film is peeled off from the reference substrate after the second step.
  31. 　前記レーザ光は、波長が４００ｎｍ以下であることを特徴とする請求項２３～２８のいずれか１項に記載の蒸着マスクの製造方法。 The method of manufacturing a vapor deposition mask according to any one of claims 23 to 28, wherein the laser beam has a wavelength of 400 nm or less.
  32. 　基板上に予め定められた薄膜パターンの形成領域に対応して、可視光を透過する樹脂製のフィルムに前記薄膜パターンと形状寸法の同じ貫通する開口パターンを形成して製造する蒸着マスクの製造方法であって、
    　前記フィルムの一面に前記薄膜パターンの形成領域に対応して該薄膜パターンよりも形状寸法が大きい開口部を設けた金属部材を密接してマスク用部材を形成する第１ステップと、
    　前記開口部内の前記フィルムの部分をエッチング加工して、前記薄膜パターンと形状寸法の同じ開口パターンを形成する第２ステップと、
    を含むことを特徴とする蒸着マスクの製造方法。     Corresponding to a predetermined thin film pattern formation region on a substrate, a deposition mask manufacturing method for forming a through-hole pattern having the same shape and dimension as a thin film pattern on a resin film that transmits visible light. Because
    A first step of forming a mask member by closely contacting a metal member provided with an opening having a shape dimension larger than that of the thin film pattern corresponding to the formation region of the thin film pattern on one surface of the film;
    Etching a portion of the film in the opening to form an opening pattern having the same shape and dimension as the thin film pattern;
    The manufacturing method of the vapor deposition mask characterized by including.
  33. 　前記第２ステップは、前記フィルムの他面側から該フィルムをエッチング加工して前記フィルムの一面側の開口面積が前記薄膜パターンの面積と同じで、前記フィルムの他面側の開口面積が前記一面側の開口面積よりも大きい前記開口パターンを形成することを特徴とする請求項３２記載の蒸着マスクの製造方法。 In the second step, the film is etched from the other surface side of the film, the opening area on the one surface side of the film is the same as the area of the thin film pattern, and the opening area on the other surface side of the film is the one surface. 33. The method of manufacturing a vapor deposition mask according to claim 32, wherein the opening pattern larger than the opening area on the side is formed.
  34. 　基板上に予め定められた薄膜パターンの形成領域に対応して、可視光を透過する樹脂製のフィルムに前記薄膜パターンと形状寸法の同じ貫通する開口パターンを形成して蒸着マスクを製造し、該蒸着マスクを使用して薄膜パターンを形成する薄膜パターン形成方法であって、
    　前記基板上に前記フィルムを密着させる第１ステップと、
    　前記基板上の前記薄膜パターンの形成領域に対応する前記フィルムの部分にレーザ光を照射し、当該部分の前記フィルムに前記薄膜パターンと形状寸法の同じ開口パターンを設けて前記蒸着マスクを形成する第２ステップと、
    　前記基板上の前記薄膜パターンの形成領域に対応した部分に前記蒸着マスクの前記開口を介して成膜する第３ステップと、
    　前記蒸着マスクを剥離する第４ステップと、
    を含むことを特徴とする薄膜パターン形成方法。     Corresponding to a predetermined thin film pattern formation region on the substrate, a vapor deposition mask is formed by forming an opening pattern having the same shape and dimension as the thin film pattern in a resin film that transmits visible light, A thin film pattern forming method for forming a thin film pattern using a vapor deposition mask,
    A first step of closely contacting the film on the substrate;
    A portion of the film corresponding to a region where the thin film pattern is formed on the substrate is irradiated with laser light, and an opening pattern having the same shape and dimension as the thin film pattern is provided on the film of the portion to form the deposition mask. Two steps,
    A third step of forming a film on the substrate corresponding to the formation region of the thin film pattern through the opening of the vapor deposition mask;
    A fourth step of peeling the vapor deposition mask;
    A thin film pattern forming method comprising:
  35. 　前記第１ステップにおいては、内部にチャック手段を備えたステージ上に前記基板を載置すると共に、前記フィルムの一面に、前記薄膜パターンに対応して該薄膜パターンよりも形状寸法が大きい開口部を設けた磁性材料又は非磁性材料からなる金属部材を密接させて形成されたマスク用部材を、前記基板上の前記薄膜パターンの形成領域が前記開口部内に位置するように位置決めした後、前記チャック手段により前記金属部材を前記基板上に吸着して前記フィルムを挟持することを特徴とする請求項３４記載の薄膜パターン形成方法。 In the first step, the substrate is placed on a stage having a chuck means inside, and an opening having a larger dimension than the thin film pattern is formed on one surface of the film corresponding to the thin film pattern. The chuck member is formed by positioning a mask member formed by bringing a metal member made of a magnetic material or a non-magnetic material into close contact with each other so that a formation region of the thin film pattern on the substrate is located in the opening. 35. The method of forming a thin film pattern according to claim 34, wherein the metal member is adsorbed on the substrate and the film is held therebetween.
  36. 　前記第２ステップと第３ステップとの間において、前記薄膜パターンの形成領域の表面から不純物を除去することを特徴とする請求項３４記載の薄膜パターン形成方法。 35. The thin film pattern forming method according to claim 34, wherein impurities are removed from the surface of the thin film pattern forming region between the second step and the third step.
  37. 　基板上に予め定められた薄膜パターンの形成領域に対応して、可視光を透過する樹脂製のフィルムに前記薄膜パターンと形状寸法の同じ貫通する開口パターンを形成した蒸着マスクを使用して薄膜パターンを形成する薄膜パターン形成方法であって、
    　前記フィルムの前記開口パターンの外側部分に金属部材を設けて構成された前記蒸着マスクの前記開口パターンを、前記基板の前記薄膜パターンの形成領域に位置合わせした状態で前記基板上に載置する第１ステップと、
    　前記蒸着マスクの前記開口パターンを介して前記基板上の前記薄膜パターンの形成領域に成膜し、薄膜パターンを形成する第２ステップと、
    を行うことを特徴とする薄膜パターン形成方法。     A thin film pattern corresponding to a predetermined thin film pattern formation region on a substrate using a vapor deposition mask in which an opening pattern having the same shape and dimension as the thin film pattern is formed on a resin film that transmits visible light. A thin film pattern forming method for forming
    The opening pattern of the vapor deposition mask configured by providing a metal member on the outer portion of the opening pattern of the film is placed on the substrate in a state in which the opening pattern is aligned with the formation region of the thin film pattern of the substrate. One step,
    A second step of forming a thin film pattern by forming a film on a formation region of the thin film pattern on the substrate through the opening pattern of the vapor deposition mask;
    A thin film pattern forming method comprising:
  38. 　前記金属部材は、前記開口パターンに対応して該開口パターンよりも形状寸法が大きい開口部を有し、前記フィルムの一面に密接された薄板あることを特徴とする請求項３７記載の薄膜パターン形成方法。 38. The thin film pattern formation according to claim 37, wherein the metal member is a thin plate having an opening having a larger size than the opening pattern corresponding to the opening pattern, and being in close contact with one surface of the film. Method.
  39. 　前記金属部材は、前記フィルムの一面又は内部に分散させて設けられた複数の薄片であることを特徴とする請求項３７記載の薄膜パターン形成方法。 38. The method of forming a thin film pattern according to claim 37, wherein the metal member is a plurality of thin pieces dispersed on one surface or inside of the film.
  40. 　前記第１ステップは、前記蒸着マスクの前記金属部材側を保持手段の平坦面に吸着して保持した状態で前記開口パターンを、チャック手段上に載置された前記基板の前記薄膜パターンの形成領域に位置合わせした後、前記チャック手段により前記金属部材を吸着して前記蒸着マスクを前記保持手段から前記基板上に移すように実施されることを特徴とする請求項３７記載の薄膜パターン形成方法。 In the first step, the thin film pattern forming region of the substrate placed on the chuck means in a state where the metal member side of the vapor deposition mask is held by being attracted and held on the flat surface of the holding means. 38. The thin film pattern forming method according to claim 37, wherein after the alignment, the metal member is adsorbed by the chuck means and the vapor deposition mask is transferred from the holding means onto the substrate.
  41. 　前記薄膜パターンは、複数種の薄膜パターンであり、
    　前記フィルムに形成された開口パターンは、前記複数種の薄膜パターンのうち、一の薄膜パターンに対応して形成されたもので、
    　前記第１ステップから前記第２ステップを行って前記一の薄膜パターンを形成した後、前記蒸着マスクを前記基板上から剥離するステップと、
    　前記蒸着マスクの前記開口パターンを前記基板の他の薄膜パターンの形成領域に位置合わせした後、前記蒸着マスクを前記基板上に載置するステップと、
    　前記蒸着マスクの開口パターンを介して前記他の薄膜パターンの形成領域に成膜し、他の薄膜パターンを形成するステップと、
    を行うことを特徴とする請求項３７記載の薄膜パターン形成方法。     The thin film pattern is a plurality of types of thin film patterns,
    The opening pattern formed in the film is formed corresponding to one thin film pattern among the plurality of types of thin film patterns,
    Performing the second step from the first step to form the one thin film pattern, and then peeling the deposition mask from the substrate;
    Placing the deposition mask on the substrate after aligning the opening pattern of the deposition mask with a formation region of another thin film pattern of the substrate;
    Forming a film in the formation region of the other thin film pattern through the opening pattern of the vapor deposition mask, and forming another thin film pattern;
    38. The thin film pattern forming method according to claim 37, wherein:
  42. 　前記薄膜パターンは、一定の配列ピッチで並べて形成される複数種の薄膜パターンであり、
    　前記フィルムに形成された前記開口パターンは、前記複数種の薄膜パターンのうち、一の薄膜パターンに対応して形成されたもので、
    　前記第１ステップから前記第２ステップを行って前記一の薄膜パターンを形成した後、前記蒸着マスクを前記複数種の薄膜パターンの配列ピッチと同寸法だけ前記複数種の薄膜パターンの並び方向に前記基板上をスライド移動するステップと、
    　前記基板の他の薄膜パターンの形成領域に前記蒸着マスクの前記開口パターンを介して成膜し、他の薄膜パターンを形成するステップと、
    を行うことを特徴とする請求項３７記載の薄膜パターン形成方法。     The thin film pattern is a plurality of types of thin film patterns formed with a constant arrangement pitch,
    The opening pattern formed in the film is formed corresponding to one thin film pattern among the plurality of types of thin film patterns,
    After the first step to the second step to form the one thin film pattern, the vapor deposition mask is arranged in the arrangement direction of the plurality of types of thin film patterns by the same dimension as the arrangement pitch of the plurality of types of thin film patterns. Sliding on the substrate;
    Forming a film through the opening pattern of the vapor deposition mask in another thin film pattern formation region of the substrate, and forming another thin film pattern;
    38. The thin film pattern forming method according to claim 37, wherein:
  43. 　前記基板は、有機ＥＬ表示用のＴＦＴ基板であり、前記複数種の薄膜パターンは、３色対応の有機ＥＬ層であることを特徴とする請求項４１又は４２記載の薄膜パターン形成方法。 43. The thin film pattern forming method according to claim 41, wherein the substrate is a TFT substrate for organic EL display, and the plurality of types of thin film patterns are organic EL layers corresponding to three colors.
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