JP2008274373A - Mask for vapor deposition - Google Patents

Mask for vapor deposition Download PDF

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Publication number
JP2008274373A
JP2008274373A JP2007121474A JP2007121474A JP2008274373A JP 2008274373 A JP2008274373 A JP 2008274373A JP 2007121474 A JP2007121474 A JP 2007121474A JP 2007121474 A JP2007121474 A JP 2007121474A JP 2008274373 A JP2008274373 A JP 2008274373A
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Prior art keywords
mask
vapor deposition
holding substrate
mask according
deposition mask
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Pending
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JP2007121474A
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Japanese (ja)
Inventor
Kiyoshizu Kinuta
精鎮 絹田
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Optnics Precision Co Ltd
株式会社オプトニクス精密
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Priority to JP2007121474A priority Critical patent/JP2008274373A/en
Publication of JP2008274373A publication Critical patent/JP2008274373A/en
Application status is Pending legal-status Critical

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask for vapor deposition withstanding the rise of temperature and capable of high precision masking when prescribed patterns or the like are vapor-deposited to the substrate to be vapor-deposited using a stock such as plastics, a glass substrate or the like with different thermal expansion coefficients. <P>SOLUTION: Holding substrates 2 composed of various materials are pasted to a mask 1 in which various circuit patterns or the like are formed by adhesion or the other method, so as to be integrated; thus a high precision mask for vapor deposition stabilized to thermal expansion is composed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a vapor deposition mask that can withstand a temperature increase during vapor deposition on a vapor deposition substrate made of various materials such as plastic and glass having different thermal linear expansion coefficients.

In general, a mask for vapor deposition is used during sputtering or vapor deposition, and as its application, a thermal linear expansion coefficient depending on a substrate to be vapor-deposited, a request for simplifying a combination configuration of a vapor-deposited material and a mask, and generally used. In addition to the demand for accuracy due to metal mask accuracy dissatisfaction due to etching, it can also be applied to deformed surfaces removed from masks limited to flat surfaces for faithful masking corresponding to various materials and various shapes There are mask requirements. Masks that meet all of these requirements are not known, but in part, the same material as the deposition substrate is used under the mask pattern of the nickel film as a mask support for the deposition substrate to meet the thermal linear expansion of the deposition substrate. A vapor deposition mask provided with a mask support plate made of photoceram glass is proposed in Patent Document 1 below.
Japanese Utility Model Publication No. 56-6022

  However, in Patent Document 1, although photoceram glass is used for the mask support plate, there is a risk that the nickel film is also etched when etching the photoceram glass. However, there is a problem that cannot be said to be effective in terms of accuracy assurance.

  In addition, a patterned nickel member is mounted, and then the photoceram glass substrate is etched. However, a corrosive solution that can etch the photoceram glass substrate has the property of corroding the nickel member, so the nickel film mask that is desired to maintain accuracy. Since most of them are attacked by the corrosive liquid, the vapor deposition mask produced by the method as described above has a problem that it is difficult to obtain sufficient accuracy.

  Furthermore, in order to exhibit the effect of the evaporation mask, a certain degree of nickel film thickness is required, and Patent Document 1 proposes to process the film to the thickness, but practical evaporation. The speed is extremely slow, so it is difficult to achieve the required nickel film thickness. Even if the thickness is obtained, the stress during the formation of the deposited film cannot be ignored, and the deposited film is deformed. Therefore, there is a problem that high-precision masking cannot be performed.

  In particular, the vapor deposition mask according to Patent Document 1 has thin metal (nickel) grown directly on the ceramic, so the interatomic distance between the ceramic and the metal is different, and it is prominent in the thin metal (nickel) film. There is a problem in that it is difficult to maintain flatness due to excessive stress.

  Moreover, in the process proposed in Patent Document 1, after opening the pattern of the nickel film, the photoceram glass substrate is etched from the back side, but the positioning that the hole and the hole meet at the center is as follows. In particular, the center misalignment jeopardizes the maintenance of the accuracy of the nickel film mask, so there is a problem that it is not practical to apply it to a high precision requirement such as a fine pattern. there were.

  Therefore, the present invention has been proposed in view of the above circumstances, and solves the above problems by withstanding the temperature rise during vapor deposition on a deposition substrate made of various materials such as plastic and glass having different thermal expansion coefficients. An object of the present invention is to provide a vapor deposition mask capable of high-accuracy masking.

  In order to achieve the above object, the vapor deposition mask according to the present invention is a high-accuracy vapor deposition mask having a high-precision pattern, that is, a thickness that can withstand handling during vapor deposition on the mask having a high-precision pattern. And a holding substrate having a hole that does not obstruct the mask pattern. In particular, as a holding substrate, a member made of various materials previously processed into a predetermined shape is used, and a high-accuracy mask is configured for support purposes.

  In the above configuration, it is preferable to configure the mask having a high-precision pattern by electroforming. Note that the mask accuracy can be improved to ± 1 micrometer (μm) by using electroforming.

  In the above configuration, the thickness of the holding substrate is preferably 5 to 50 times the thickness of the mask having a high-precision pattern, and the thickness of the holding substrate is 1 to 50 micrometers. Is more preferably 50 to 500 micrometers. If the thickness of the holding substrate is less than five times the thickness of the mask, it is not preferable because the thermal expansion coefficient of the mask having a high-precision pattern cannot be made the same as the thermal expansion coefficient of the holding substrate. .

  In the above structure, the holding substrate is preferably bonded to the mask with solder, an adhesive, or a conductive adhesive.

  In the above configuration, it is preferable to deposit a metal by plating or electroforming on the entire mask and holding substrate which are bonded and integrated.

  In the above configuration, the holding substrate is preferably made of a magnetic material, and more preferably, the magnetic material is made of ferrite, alnico, samarium cobalt, nickel, nickel alloy, iron, or iron alloy.

  The holding substrate is also preferably made of an elastic material made of metal, ceramics, plastic, or rubber. In particular, it is more preferable that these materials have the same expansion coefficient as the vapor deposition material. . In the case of an elastic ceramic, plastic, or metal elastic body, it is more preferable to deform it in advance and press to make a flat surface.

  In the above configuration, the mask is preferably formed of an organic film such as plastic or rubber, and the mask material may be a photoresist, and the photoresist may be exposed and developed to form a pattern.

  In the above structure, the side of the mask in contact with the deposition target substrate is coated with gold, platinum, amorphous metal, silicon dioxide, silicon monoxide, alumina, or plastic with a thickness of 0.1 to 50 micrometers. It is preferable to do. In addition, when the thickness is less than the above, it is not preferable because the coated surface is easily scratched and unnecessary contaminants are attached to the deposition target substrate.

  In the above configuration, it is preferable that the mask is made of metal, the holding substrate is made of plastic, and the plastic is deformed by heating and pressing.

  In the vapor deposition mask according to the present invention, the holding substrate is made of a ferromagnetic material such as nickel, nickel alloy, iron, or iron alloy, and is adsorbed to the vapor deposition substrate surface side using a permanent magnet or the like from the back of the vapor deposition substrate, Furthermore, since the holding substrate has a thickness of 5 times to 50 times that of the mask and is more strongly adsorbed, the demand for a shape that follows the flatness of the holding substrate and the shape of the deposition target substrate is guaranteed. be able to. Therefore, it is possible to guarantee the most important requirement of adhesion between the mask and the substrate to be deposited, and the masking effect based on the mask pattern accuracy which is a basic requirement for the deposition mask is exhibited.

  In particular, it has been found that by attaching the holding substrate to the permanent magnet and bonding the mask and the holding substrate together, it is possible to more easily attach the evaporation mask. That is, when the mask is attached, if the jig or back surface of the substrate to be deposited is made of an alloy such as nickel and iron and is made of a material that is attracted by magnetic force, the mask can be attracted by magnetism and set with one touch. . Furthermore, after the mask and the holding substrate are bonded together, the mask and the holding substrate are combined to avoid troubles such as peeling by electrodeposition by nickel plating, nickel electroforming, etc. Can do. Further, the integration after the electrodeposition can prevent the generation of gas in the high temperature vapor deposition process.

Also, when ceramic, plastic or metal is used in selecting the material for the holding substrate, for example, when plastic is used, the plastic is bent in advance and flattened by applying pressure when affixed, and then curved after being affixed Therefore, masking with a three-dimensional shape is possible. In addition, for example, when using a holding substrate having the same coefficient of thermal expansion as that of the material to be deposited, the mask and the substrate to be deposited cause an integral expansion change according to the temperature change. Therefore, it is possible to provide a high-precision deposition mask without any influence and to perform masking that is not affected by temperature.
In addition, by coating the side of the mask that contacts the deposition substrate with a thickness of 0.1 to 50 micrometers with gold, platinum, amorphous metal, silicon dioxide, silicon monoxide, alumina, or plastic The mask can be prevented from being contaminated with unnecessary substances when contacting the deposition target substrate.

  A basic configuration of an evaporation mask according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 and FIG. 2 are cross-sectional perspective views of main parts of a vapor deposition mask according to an embodiment of the present invention, and FIG. 1 is a plurality of simple grooves in one embodiment of the vapor deposition mask according to the present invention. FIG. 2 is an explanatory view for explaining an example of a special mask structure in another embodiment of the evaporation mask according to the present invention. FIG. 3 is an explanatory process diagram showing a manufacturing process of a deposition mask according to an embodiment of the present invention corresponding to FIG. 1, and FIG. 4 is a deposition mask according to another embodiment of the present invention corresponding to FIG. It is explanatory process drawing which shows this manufacturing process.

First, in FIG. 1 or FIG. 2, 1 is a mask having a high-precision pattern, 2 is a holding substrate, and 5 is a mask bridge.
The mask 1 having a high-precision pattern is formed with a fine pattern using various materials including plastic, glass, rubber and the like, and is configured using, for example, nickel. The mask 1 is processed using electroforming, etching, laser processing, or electric discharge processing.
The holding substrate 2 is made of various materials including glass, silicon, ceramics, plastic, rubber, metal or the like, and is configured in a predetermined shape and size. Note that the holding substrate 2 is processed using electroforming, etching, laser processing, electric discharge processing, or other appropriate methods, like the mask 1.

  The holding substrate 2 is bonded to the mask 1 with an adhesive, for example, and integrated. The mask 1 may be integrated by bonding the holding substrate 2 by soldering, conductive adhesive or the like.

In addition, the holding substrate 2 is bonded to the mask 1 and the integrated substrate can be used as it is as a vapor deposition mask according to the present invention.
Further, the mask 1 and the holding substrate 2 are integrated, and the mask 1 and the holding substrate 2 are more integrated by covering them with a film having a predetermined thickness by electroforming or plating at the same time. It can be.

  For example, when the thickness of the mask 1 is set to 10 to 15 micrometers (μm), the thickness of the holding substrate 2 is set to 50 to 250 micrometers (μm). Thereby, the accuracy of the mask 1 is sufficiently exhibited and the mask 1 is sufficiently supported, so that the thermal expansion coefficient can be made dependent on the holding substrate 2. Note that this effect is achieved when the thickness of the holding substrate 2 is sufficiently thick compared to the thickness of the mask 1, that is, when the thickness is set to 5 times or more and 50 times or less.

An adhesive can be used when the holding substrate 2 is bonded to the mask 1. In addition, welding by soldering is also possible, and an appropriate method may be selected for each integration method. For example, the electrodeposition, that is, the one integrated by electroforming metal can be used as the vapor deposition mask according to the present invention.
Further, when a magnetic material such as nickel or a nickel alloy is used as the holding substrate 2, the magnetism can be utilized when it is necessary to attract the vapor deposition mask according to the present invention.

  Further, for example, when the holding substrate 2 is made of plastic, the shape and size of the plastic can be freely formed. Therefore, the high accuracy of the mask 1 can be held by being bonded to the mask 1. Furthermore, since the holding substrate 2 made of plastic can be not only a flat surface but also a curved surface, a deposition mask having a curved surface can be manufactured.

  In this embodiment, for example, the mask 1 made of a metal such as nickel and the holding substrate 2 made of plastic are deformed by heating and pressing, and the holding substrate 2 is bonded to the mask 1. It is integrated.

  Here, if an elastic material is used as the plastic constituting the holding substrate 2, the holding substrate 2 can be deformed in advance and made flat by pressure (pressurization), and this is bonded to the mask 1. This makes it possible to manufacture high-precision deposition masks having various shapes.

Below, the manufacturing process of the mask for vapor deposition which concerns on this invention is demonstrated.
FIG. 3 and FIG. 4 are explanatory process diagrams showing a manufacturing process in which a mask is manufactured by nickel electroforming, and then a holding substrate using various materials is bonded together, and the deposition mask is shown. A partial cut is shown as a schematic cross-sectional view. FIG. 3 is an explanatory process diagram showing a manufacturing process of a deposition mask according to the present invention corresponding to FIG. 1 and FIG. 4 corresponding to FIG.

  3 or 4, 3 is a resist (photoresist), 4 is nickel electroforming, 5 is a mask bridge, 6 is an adhesive, 7 is an electrodeposition coating by additional processing, and 10 is a vapor deposition mask frame.

  First, as shown in FIGS. 3A and 4A, a resist 3 is coated on a substrate (SUS), and a high-precision pattern is exposed after exposure or development. Nickel electroforming 4 is deposited with a thickness of 15 micrometers to obtain a vapor deposition mask frame 10.

Subsequently, in one embodiment according to the present invention, the resist 3 is removed from the vapor deposition mask frame 10 in FIG. 3A to obtain a state as shown in FIG. On the other hand, in another embodiment according to the present invention, the surface of the vapor deposition mask frame 10 formed as shown in FIG. 4A is ground while the resist 3 and the nickel electroforming 4 coexist, and the entire surface is ground. A mask bridge 5 is formed on the surface to obtain a state as shown in FIG.
Further, the holding substrate 2 is bonded to the surface of the nickel electroforming 4 shown in FIG. 3B with an adhesive 6 (not shown) to obtain a state as shown in FIG.

  On the other hand, in another embodiment according to the present invention, the holding substrate 2 is bonded to the surface of the mask bridge 5 shown in FIG. 4B by the adhesive 6 to obtain a state as shown in FIG. Incidentally, in this step, for example, the step described in Japanese Patent Laid-Open No. 2001-254169 previously proposed by the present applicant is adopted. In this method, a first mask pattern is provided on the vapor deposition mask frame, and fine ribs are installed so as to straddle the fine width of the first mask pattern, and the position is fixed by the second mask pattern and the vapor deposition mask frame.

  And the film | membrane of the nickel electroforming 4 shown in FIG.3 (C) and FIG.4 (C) is peeled from a board | substrate (SUS), and a state as shown in FIG.3 (D) and FIG.4 (D) is obtained, respectively. . In addition, in the vapor deposition mask shown in FIG. 3D and FIG. 4D, additional processing may be performed by electrodeposition of nickel or the like to obtain a state as shown in FIG. 5 and FIG. It is done as needed.

  As described above, the vapor deposition mask according to the present invention can be applied to a mask for forming a circuit pattern of an element used in a semiconductor device or various electronic devices. The present invention is not limited to this, and various design changes can be made without departing from the matters described in the claims.

It is a principal part section perspective view showing one embodiment of a mask for vapor deposition concerning the present invention. It is a principal part cross-sectional perspective view which shows other embodiment of the mask for vapor deposition which concerns on this invention. (A)-(D) are principal part sectional drawings which show the manufacturing process in one Embodiment of the mask for vapor deposition which concerns on this invention. (A)-(D) are principal part sectional drawings which show the manufacturing process in other embodiment of the mask for vapor deposition which concerns on this invention. It is principal part sectional drawing which shows the manufacturing process of the form which developed one Embodiment of the mask for vapor deposition which concerns on this invention. It is principal part sectional drawing which shows the manufacturing process of the form which developed other embodiment of the vapor deposition mask which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Mask 2 Holding substrate 3 Resist 4 Nickel electroforming 5 Mask bridge 6 Adhesive 7 Electrodeposition coating 10 by additional processing Deposition mask frame

Claims (14)

  1. To a mask having a predetermined pattern, a holding substrate having a thickness that can withstand the handling in the vapor deposition process is bonded so as not to disturb the mask function while ensuring the accuracy of the pattern,
    A vapor deposition mask characterized by that.
  2. The pattern was configured by electroforming,
    The vapor deposition mask according to claim 1.
  3. The thickness of the holding substrate was 5 to 50 times the thickness of the mask,
    The vapor deposition mask according to claim 1.
  4. The thickness of the mask is 1 to 50 micrometers,
    The thickness of the holding substrate was 50 to 500 micrometers,
    The vapor deposition mask according to claim 3.
  5. The holding substrate was bonded to the mask with solder, an adhesive, or a conductive adhesive,
    The vapor deposition mask according to claim 1.
  6. The metal was deposited by plating or electroforming on the whole of the mask and the holding substrate bonded and integrated,
    The vapor deposition mask according to claim 1.
  7. The holding substrate is made of a magnetic material,
    The vapor deposition mask according to claim 1.
  8. The magnetic material was ferrite, alnico, samarium cobalt, nickel, nickel alloy, iron, or iron alloy,
    The evaporation mask according to claim 7.
  9. The holding substrate is made of an elastic material made of metal, ceramics, plastic, or rubber,
    The material is a material having the same expansion coefficient as the vapor deposition material,
    The vapor deposition mask according to claim 1.
  10. The mask is made of an organic film such as plastic or rubber.
    The vapor deposition mask according to claim 1.
  11. The mask material is a photoresist, and the photoresist is exposed and developed to form a pattern.
    The vapor deposition mask according to claim 1.
  12. The side of the mask that is in contact with the deposition substrate is coated with gold, platinum, amorphous metal, silicon dioxide, silicon monoxide, alumina, or plastic with a thickness of 0.1 micrometers to 50 micrometers.
    The vapor deposition mask according to claim 1.
  13. The mask is made of metal;
    The holding substrate is made of plastic,
    The plastic was deformed by heating and pressing,
    The vapor deposition mask according to claim 1.
  14. The holding substrate is made of elastic ceramic, plastic, or metal elastic body, deformed in advance, and then flattened by pressing,
    The vapor deposition mask according to claim 1.
JP2007121474A 2007-05-02 2007-05-02 Mask for vapor deposition Pending JP2008274373A (en)

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US10160000B2 (en) 2012-01-12 2018-12-25 Dai Nippon Printing Co., Ltd. Vapor deposition mask with metal plate
JP2013173968A (en) * 2012-02-24 2013-09-05 V Technology Co Ltd Vapor-deposition mask, and method for manufacturing vapor-deposition mask
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