JP2013083704A - Mask and mask member used for the same - Google Patents
Mask and mask member used for the same Download PDFInfo
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- JP2013083704A JP2013083704A JP2011221883A JP2011221883A JP2013083704A JP 2013083704 A JP2013083704 A JP 2013083704A JP 2011221883 A JP2011221883 A JP 2011221883A JP 2011221883 A JP2011221883 A JP 2011221883A JP 2013083704 A JP2013083704 A JP 2013083704A
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- 239000010408 film Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000010409 thin film Substances 0.000 claims abstract description 60
- 239000011347 resin Substances 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 230000004907 flux Effects 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000000696 magnetic material Substances 0.000 claims description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 25
- 230000007261 regionalization Effects 0.000 abstract description 8
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- 230000005291 magnetic effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
本発明は、基板上に一定形状の薄膜パターンを形成するためのマスクに関し、特に高精細な薄膜パターンの形成を可能にするマスク及びそれに使用するマスク用部材に係るものである。 The present invention relates to a mask for forming a thin film pattern having a fixed shape on a substrate, and particularly relates to a mask capable of forming a high-definition thin film pattern and a mask member used therefor.
従来、この種のマスクは、所定のパターンに対応した形状の開口を有するマスクであり、基板に対して位置合わせした後、該基板上に密着させ、その後上記開口を介して基板に対するパターンニング成膜をするようになっていた（例えば、特許文献１参照）。 Conventionally, this type of mask is a mask having an opening having a shape corresponding to a predetermined pattern. After aligning the substrate, the mask is brought into close contact with the substrate, and then patterned through the opening. A film was formed (for example, see Patent Document 1).
また、他のマスクは、所定の成膜パターンに対応した複数の開口が設けられた強磁性体から成るメタルマスクであり、基板の一面を覆うように基板に密着されると共に、基板の他面側に配置された磁石の磁力を利用して固定され、真空蒸着装置の真空槽内で上記開口を通して基板の一面に蒸着材料を付着させ、薄膜パターンを形成するようになっていた（例えば、特許文献２参照）。 The other mask is a metal mask made of a ferromagnetic material provided with a plurality of openings corresponding to a predetermined film formation pattern, and is in close contact with the substrate so as to cover one surface of the substrate and the other surface of the substrate. It was fixed using the magnetic force of the magnet arranged on the side, and the deposition material was attached to one surface of the substrate through the opening in the vacuum chamber of the vacuum deposition apparatus to form a thin film pattern (for example, patent Reference 2).
しかし、このような従来のマスクにおいて、上記特許文献１に記載のマスクは、一般に、薄い金属板に薄膜パターンに対応した開口を例えばエッチング等により形成して作られるので、開口を高精度に形成することが困難であり、又金属板の熱膨張による位置ずれや反り等の影響で例えば３００ｄｐｉ以上の高精細な薄膜パターンの形成が困難であった。 However, in such a conventional mask, the mask described in Patent Document 1 is generally formed by forming an opening corresponding to a thin film pattern on a thin metal plate by, for example, etching, so that the opening is formed with high accuracy. It is difficult to form a high-definition thin film pattern of, for example, 300 dpi or more due to the influence of misalignment and warpage due to thermal expansion of the metal plate.
また、上記特許文献２に記載のマスクは、上記特許文献１に記載のマスクよりも基板との密着性は改善されるものの、特許文献１に記載のマスクと同様に、薄い金属板に薄膜パターンに対応した開口を例えばエッチング等により形成して作られるので、開口を高精度に形成することが困難であり、例えば３００ｄｐｉ以上の高精細な薄膜パターンの形成が困難であった。 In addition, the mask described in Patent Document 2 has improved adhesion to the substrate as compared with the mask described in Patent Document 1, but, like the mask described in Patent Document 1, a thin metal plate has a thin film pattern. Therefore, it is difficult to form the opening with high accuracy, for example, it is difficult to form a high-definition thin film pattern of 300 dpi or more.
そこで、本発明は、このような問題点に対処し、高精細な薄膜パターンの形成を可能にするマスク及びそれに使用するマスク用部材を提供することを目的とする。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to address such problems and provide a mask capable of forming a high-definition thin film pattern and a mask member used therefor.
上記目的を達成するために、本発明によるマスクは、基板上に一定形状の薄膜パターンを形成するためのマスクであって、可視光を透過する樹脂製のフィルムと、前記基板上に予め定められた薄膜パターン形成領域に対応して前記薄膜パターンよりも形状の大きい貫通する開口部を形成した板体で構成され、前記フィルムを保持する保持部材と、を備え、前記フィルムは、前記基板上の前記薄膜パターン形成領域に対応して前記保持部材の前記開口部内に前記薄膜パターンと同形状の開口パターンを備えている。 In order to achieve the above object, a mask according to the present invention is a mask for forming a thin film pattern having a certain shape on a substrate, and is formed in advance on a resin film that transmits visible light and on the substrate. And a holding member for holding the film, the film on the substrate, the plate having a penetrating opening having a shape larger than that of the thin film pattern corresponding to the thin film pattern forming region. Corresponding to the thin film pattern formation region, an opening pattern having the same shape as the thin film pattern is provided in the opening of the holding member.
このような構成により、基板上に予め定められた薄膜パターン形成領域に対応して薄膜パターンよりも形状の大きい貫通する開口部を形成した板体で構成された保持部材に保持されており、上記基板上の薄膜パターン形成領域に対応して保持部材の開口部内に、薄膜パターンと同形状の開口パターンを備えた可視光を透過する樹脂製のフィルムの上記開口パターンを介して成膜し、基板上に薄膜パターンを形成する。 With such a configuration, the substrate is held by a holding member formed of a plate body that has a through-opening portion having a shape larger than that of the thin film pattern corresponding to a predetermined thin film pattern formation region on the substrate. A film is formed in the opening of the holding member corresponding to the thin film pattern forming region on the substrate through the opening pattern of the resin film having an opening pattern having the same shape as the thin film pattern and transmitting visible light. A thin film pattern is formed thereon.
好ましくは、前記保持部材は、金属材料を含んで構成されているのが望ましい。
さらに好ましくは、前記フィルムは、その一部に金属膜をコーティングして備え、該金属膜と前記保持部材とをノンフラックス半田付けして前記保持部材に保持されるのが望ましい。
Preferably, the holding member is configured to include a metal material.
More preferably, the film is provided with a metal film coated on a part of the film, and the metal film and the holding member are non-flux soldered and held on the holding member.
好ましくは、前記保持部材は、磁性材料を含んで構成されているとよい。
より好ましくは、前記フィルムは、ポリイミドから成るのが望ましい。
Preferably, the holding member may include a magnetic material.
More preferably, the film is made of polyimide.
また、本発明によるマスク用部材は、基板上に一定形状の薄膜パターンを形成するマスクを作製するためのマスク用部材であって、可視光を透過する樹脂製のフィルムと、前記基板上に予め定められた薄膜パターン形成領域に対応して前記薄膜パターンよりも形状の大きい貫通する開口部を形成した板体で構成され、前記フィルムを保持する保持部材と、を備えたものである。 Further, the mask member according to the present invention is a mask member for producing a mask for forming a thin film pattern having a fixed shape on a substrate, and is made of a resin film that transmits visible light and a substrate on the substrate in advance. And a holding member for holding the film. The holding member holds the film. The holding member is formed of a plate having a penetrating opening having a shape larger than that of the thin film pattern.
このような構成により、基板上に予め定められた薄膜パターン形成領域に対応して薄膜パターンよりも形状の大きい貫通する開口部を形成した板体で構成された保持部材に可視光を透過する樹脂製のフィルムを保持し、該フィルムの保持部材の開口部内に位置する部分に上記基板上に予め定められた薄膜パターン形成領域に対応して開口パターンを形成してマスクを作製し、該マスクを使用して基板上に一定形状の薄膜パターンを形成する。 With such a configuration, a resin that transmits visible light to a holding member formed of a plate body that has a through-hole having a shape larger than that of the thin film pattern corresponding to a predetermined thin film pattern formation region on the substrate. A film is held, and an opening pattern is formed on the substrate corresponding to a predetermined thin film pattern forming region on a portion located in the opening of the holding member of the film to produce a mask. A thin film pattern having a fixed shape is formed on the substrate.
好ましくは、前記フィルムは、前記基板上の前記薄膜パターン形成領域に対応して前記保持部材の前記開口部内に前記薄膜パターンと同形状の凹部を備えているとよい。
より好ましくは、前記保持部材は、金属材料を含んで構成されているのが望ましい。
Preferably, the film may include a recess having the same shape as the thin film pattern in the opening of the holding member corresponding to the thin film pattern forming region on the substrate.
More preferably, the holding member includes a metal material.
本発明によれば、薄いフィルムに開口パターンを形成するので、開口パターンの形成精度を向上することができる。また、開口パターンを形成したフィルムを基板上に設置するのでフィルムと基板との密着性が増し、薄膜パターンの形成精度を向上することができる。したがって、高精細な薄膜パターンの形成を容易に行なうことができる。さらに、フィルムを板体の保持部材に保持しているので、取り扱いが容易である。 According to the present invention, since the opening pattern is formed on the thin film, the formation accuracy of the opening pattern can be improved. Moreover, since the film in which the opening pattern is formed is placed on the substrate, the adhesion between the film and the substrate is increased, and the formation accuracy of the thin film pattern can be improved. Therefore, it is possible to easily form a high-definition thin film pattern. Furthermore, since the film is held by the holding member of the plate, handling is easy.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明によるマスクの実施形態を示す図であり、（ａ）は平面図、（ｂ）は（ａ）のＯ−Ｏ線断面矢視図である。このマスク１は、基板上に一定形状の薄膜パターンを形成するためのものであり、フィルム２と、保持部材３とを備えて構成されている。 Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. 1A and 1B are diagrams showing an embodiment of a mask according to the present invention, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line OO in FIG. The mask 1 is for forming a thin film pattern having a fixed shape on a substrate, and includes a film 2 and a holding member 3.
上記フィルム２は、可視光を透過する一定面積の樹脂製シートであり、基板上に予め定められた薄膜パターン形成領域に対応して後述の保持部材３の開口部５内に上記薄膜パターンと同形状の貫通する開口パターン４を備えている。この開口パターン４は、図１に示すように、基板上に予め設定された複数の基準パターン（例えば、有機ＥＬ表示装置の同色の複数のアノード電極）に跨るストライプ状のものであってもよく、図２に示すように上記各基準パターンに対応して夫々個別に設けられたものであってもよい。上記フィルム２は、例えば厚みが１０μｍ〜３０μｍ程度のポリイミドやポリエチレンテレフタレート（ＰＥＴ）等の樹脂製であり、特にポリイミドは耐熱性が高く、且つウェットエッチングやドライエッチングにより開口パターン４を精度よく形成することができる点で好ましい。 The film 2 is a resin sheet having a constant area that transmits visible light, and is the same as the thin film pattern in an opening 5 of a holding member 3 described later corresponding to a predetermined thin film pattern forming region on the substrate. An opening pattern 4 penetrating the shape is provided. As shown in FIG. 1, the opening pattern 4 may be in the form of a stripe that straddles a plurality of reference patterns preset on the substrate (for example, a plurality of anode electrodes of the same color of an organic EL display device). As shown in FIG. 2, it may be provided individually corresponding to each of the reference patterns. The film 2 is made of a resin such as polyimide having a thickness of about 10 μm to 30 μm, polyethylene terephthalate (PET), and the like. Particularly, polyimide has high heat resistance, and the opening pattern 4 is accurately formed by wet etching or dry etching. It is preferable in that it can be performed.
上記保持部材３は、上記フィルム２の一面に面接触して該フィルム２を保持するものであり、例えばエッチングや、レーザ加工等の公知の技術を使用して、基板上に予め定められた薄膜パターン形成領域に対応して上記薄膜パターンよりも形状の大きい貫通する開口部５を形成した板体であり、金属材料を含んで構成されている。なお、図１において、符号６は、基板に予め形成された基板側アライメントマークに対して位置合わせするためのマスク側アライメントマークである。 The holding member 3 holds the film 2 in surface contact with the one surface of the film 2, and is a thin film predetermined on a substrate using a known technique such as etching or laser processing. The plate body is formed with a through-hole 5 having a shape larger than that of the thin film pattern corresponding to the pattern formation region, and includes a metal material. In FIG. 1, reference numeral 6 denotes a mask-side alignment mark for alignment with a substrate-side alignment mark formed in advance on the substrate.
保持部材３は、非金属材料で構成されていてもよい。この場合、一定電圧を印加可能に構成された静電チャックステージ上に基板を載置した状態でステージに電圧を印加することにより、保持部材３を基板側に静電吸着させて上記フィルム２を基板面に密着させることができる。したがって、開口パターン４の形成精度を向上することができ、また薄膜パターンの形成精度も向上することができる。 The holding member 3 may be made of a nonmetallic material. In this case, the holding member 3 is electrostatically attracted to the substrate side by applying a voltage to the stage while the substrate is placed on an electrostatic chuck stage that is configured to be able to apply a constant voltage, and the film 2 is attached. It can be adhered to the substrate surface. Therefore, the formation accuracy of the opening pattern 4 can be improved, and the formation accuracy of the thin film pattern can also be improved.
又は、保持部材３は、磁性材料を含んで構成されてもよい。これにより、永久磁石や電磁石を内蔵した磁気チャックステージ上に載置された基板に上記磁石の静磁界の作用により保持部材３を吸着して、上記フィルム２を基板面に密着させることができる。したがって、この場合も、開口パターン４の形成精度を向上することができ、また薄膜パターンの形成精度も向上することができる。 Or the holding member 3 may be comprised including a magnetic material. Thereby, the holding member 3 can be attracted to the substrate placed on the magnetic chuck stage containing the permanent magnet or the electromagnet by the action of the static magnetic field of the magnet, and the film 2 can be brought into close contact with the substrate surface. Therefore, also in this case, the formation accuracy of the opening pattern 4 can be improved, and the formation accuracy of the thin film pattern can also be improved.
なお、保持部材３には、図３に示すように、薄膜パターンの形成に影響を及ぼさない予め定められた部分に開口部５を複数単位に分割するブリッジ７を設けるとよい。これにより、保持部材３の剛性が増し、撓みを抑えることができる。したがって、マスク１と基板との位置合わせ精度をより向上して薄膜パターンの形成精度をより向上することができる。 As shown in FIG. 3, the holding member 3 may be provided with a bridge 7 that divides the opening 5 into a plurality of units at a predetermined portion that does not affect the formation of the thin film pattern. Thereby, the rigidity of the holding member 3 increases and it can suppress bending. Therefore, the alignment accuracy between the mask 1 and the substrate can be further improved, and the formation accuracy of the thin film pattern can be further improved.
次に、このように構成されたマスク１の製造について図４を参照して説明する。
先ず、同図（ａ）に示すように、可視光を透過する厚みが１０μｍ〜３０μｍ程度の例えばポリイミドのフィルム２と、基板上に予め定められた薄膜パターン形成領域に対応して薄膜パターンよりも形状の大きい貫通する開口部５を形成した例えば金属板からなる保持部材３とを、同図に矢印で示すように面接合し、同図（ｂ）に示すマスク用部材８を形成する。
Next, the manufacture of the mask 1 configured as described above will be described with reference to FIG.
First, as shown in FIG. 5A, the thickness of the film that transmits visible light is, for example, polyimide film 2 having a thickness of about 10 μm to 30 μm, and a thin film pattern corresponding to a predetermined thin film pattern formation region on the substrate. The holding member 3 made of, for example, a metal plate having the opening 5 having a large shape formed thereon is surface-bonded as indicated by an arrow in the figure to form a mask member 8 shown in FIG.
上記面接合は、好ましくは、図５に示すように、一部（例えば周縁領域）に金属膜９をコーティングしたフィルム２を使用して、該金属膜９上に塗布されたノンフラックス半田１０によりフィルム２を保持部材３にノンフラックス半田付けするとよい。また、大面積の基板上の複数領域に薄膜パターン群を形成する場合には、図６に示すように、基板上の上記複数領域に対応したフィルム２の複数領域１１の周縁部に金属膜９をコーティングし、該金属膜９上に上記各領域１１を囲んでノンフラックス半田１０を塗布したフィルム２を使用するとよい。このようなフィルム２と保持部材３とをノンフラックス半田付けして形成したマスク１を使用すれば、例えば薄膜パターンを真空蒸着して形成する際に半田からアウトガスが発生せず、例えば有機ＥＬ表示用基板の製造時に、アウトガスの不純物により有機ＥＬ層がダメージを受けるおそれがない。なお、図５及び図６に示す符号１２は、保持部材３に形成されたマスク側アライメントマークに対応して形成された開口であり、フィルム２を通して基板上の基板側アライメントマークを観察可能にするためのものである。 As shown in FIG. 5, the surface bonding is preferably performed by using non-flux solder 10 applied on the metal film 9 using a film 2 having a part (for example, a peripheral region) coated with the metal film 9. The film 2 may be non-flux soldered to the holding member 3. When forming a thin film pattern group in a plurality of regions on a large-area substrate, as shown in FIG. 6, the metal film 9 is formed on the peripheral portion of the plurality of regions 11 of the film 2 corresponding to the plurality of regions on the substrate. It is preferable to use a film 2 in which a non-flux solder 10 is applied on the metal film 9 so as to surround the regions 11. If the mask 1 formed by non-flux soldering the film 2 and the holding member 3 is used, no outgas is generated from the solder when the thin film pattern is formed by vacuum deposition, for example, an organic EL display. There is no possibility that the organic EL layer is damaged by the outgas impurities during the production of the substrate. Reference numerals 12 shown in FIGS. 5 and 6 are openings formed corresponding to the mask-side alignment marks formed on the holding member 3 so that the substrate-side alignment marks on the substrate can be observed through the film 2. Is for.
上記面接合には、保持部材３にフィルム状の樹脂を圧着させる方法、保持部材３にフィルム状の樹脂を接着させる方法、半乾燥状態の樹脂溶液に保持部材３を圧着する方法、又は保持部材３に溶液状の樹脂をコーティングする方法等が含まれる。 For the surface bonding, a method of pressure-bonding a film-like resin to the holding member 3, a method of bonding a film-like resin to the holding member 3, a method of pressure-bonding the holding member 3 to a semi-dried resin solution, or a holding member 3 includes a method of coating a solution-like resin.
詳細には、上記フィルム状の樹脂を圧着させる方法には、熱可塑性のフィルム２や表面に融着性処理が施されたフィルム２に保持部材３を熱圧着する方法や、フィルム２の表面を改質処理して保持部材３を熱圧着する方法がある。この場合、フィルム２の表面にカルボキシル基（−ＣＯＯＨ）やカルボニル基（−ＣＯＯ）等を形成して表面の改質を行えば、金属製の保持部材３との界面における化学結合により接着が可能となる。又は、フィルム２の表面を大気圧プラズマ又は減圧プラズマ中でプラズマ処理したり、アルカリ溶液でフィルム２の表面をウェットエッチングしたりしてフィルム２の表面を改質してもよい。 In detail, the method of press-bonding the film-like resin includes a method of thermo-compressing the holding member 3 to the thermoplastic film 2 or the film 2 whose surface has been subjected to a fusion process, There is a method in which the holding member 3 is thermocompression-bonded by a modification treatment. In this case, if the surface of the film 2 is modified by forming a carboxyl group (—COOH), a carbonyl group (—COO) or the like on the surface of the film 2, adhesion is possible by chemical bonding at the interface with the metal holding member 3. It becomes. Alternatively, the surface of the film 2 may be modified by subjecting the surface of the film 2 to plasma treatment in atmospheric pressure plasma or reduced pressure plasma, or wet etching the surface of the film 2 with an alkaline solution.
また、保持部材３にフィルム状の樹脂を接着させる方法には、溶剤を含まない、又は溶剤を極めて少ない量だけ含む硬化性樹脂により接着する方法があり、前述のノンフラックス半田による接着方法もこれに含まれる。 Further, as a method of adhering the film-like resin to the holding member 3, there is a method of adhering with a curable resin that does not contain a solvent or contains an extremely small amount of a solvent, and the adhering method using the non-flux solder described above is also used. include.
次いで、図４（ｃ）に示すように、マスク用部材８を基準パターン１２を形成した基板１３（例えば、有機ＥＬ表示用ＴＦＴ基板のダミー基板）上に載置した後、マスク側アライメントマーク６と図示省略の基板側アライメントマークとを例えば顕微鏡により観察しながら、各マークが一定の位置関係を成すように調整してマスク用部材８と基板１３との位置合わせを行う。 Next, as shown in FIG. 4C, after the mask member 8 is placed on the substrate 13 on which the reference pattern 12 is formed (for example, a dummy substrate of the organic EL display TFT substrate), the mask side alignment mark 6 is placed. While aligning the substrate-side alignment marks (not shown) with a microscope, for example, the mask member 8 and the substrate 13 are aligned by adjusting the marks so as to form a certain positional relationship.
続いて、波長が４００ｎｍ以下の、例えばＫｒＦ２４８ｎｍのエキシマレーザを使用して、図４（ｄ）に示すように、保持部材３の開口部５内に位置するフィルム２の部分で、上記基板１３の基準パターン１２上の薄膜パターン形成領域に対応したフィルム２の部分にエネルギー密度が１Ｊ／ｃｍ２〜２０Ｊ／ｃｍ２のレーザ光Ｌを照射し、図７に拡大して示すように当該部分に２μｍ程度の薄い層を残して一定深さの凹部１４を形成する。このような紫外線のレーザ光Ｌを使用すれば、レーザ光Ｌの光エネルギーによりフィルム２の炭素結合が一瞬のうちに破壊されて除去されるため、残渣の無いクリーンな穴あけ加工を行うことができる。 Subsequently, using an excimer laser having a wavelength of 400 nm or less, for example, KrF 248 nm, as shown in FIG. 4D, the film 13 is positioned in the opening 5 of the holding member 3. energy density irradiated with laser light L of 1J / cm 2 ~20J / cm 2 to the thin film pattern forming region portion of the film 2 corresponding to on the reference pattern 12, 2 [mu] m in the portion as shown in the enlarged view of FIG. 7 The recess 14 having a certain depth is formed while leaving a thin layer. If such an ultraviolet laser beam L is used, the carbon bond of the film 2 is broken and removed instantly by the optical energy of the laser beam L, so that clean drilling without residue can be performed. .
その後、図４（ｅ）に示すように、公知の技術を使用してフィルム２面をウェットエッチング又はドライエッチングし、上記凹部１４を貫通させて開口パターン４を形成する。これにより、本発明のマスク１が完成する。 Thereafter, as shown in FIG. 4E, the surface of the film 2 is wet-etched or dry-etched using a known technique, and the opening pattern 4 is formed through the concave portion 14. Thereby, the mask 1 of the present invention is completed.
なお、上記実施形態においては、フィルム２の開口パターン４の形成をレーザ光Ｌを使用して行う場合について説明したが、本発明はこれに限られず、公知のフォトリソグラフィー技術を使用して行ってもよい。即ち、フィルム２面にフォトレジストを塗布し、フォトマスクを使用してこのフォトレジストを露光することによりレジストマスクを形成し、該レジストマスクを使用して上記フィルム２をウェットエッチング又はドライエッチングして開口パターン４を形成してもよい。 In addition, in the said embodiment, although the case where formation of the opening pattern 4 of the film 2 was performed using the laser beam L was demonstrated, this invention is not restricted to this, It performs using a well-known photolithography technique. Also good. That is, a photoresist is applied to the surface of the film 2, and a photoresist mask is formed by exposing the photoresist using a photomask. The film 2 is wet etched or dry etched using the resist mask. The opening pattern 4 may be formed.
次に、本発明のマスク１を使用して行う有機ＥＬ表示用基板の製造について、図８を参照して説明する。ここでは、Ｒ（赤色）有機ＥＬ層を形成する場合について説明する。
先ず、第１ステップにおいては、図８（ａ）に示すようにＴＦＴ基板１５上にマスク１を載置し、マスク１に形成されたマスク側アライメントマーク６とＴＦＴ基板１５に予め形成された図示省略の基板側アライメントマークとを顕微鏡により観察しながら、両マークが予め定められた位置関係となるように調整してマスク１とＴＦＴ基板１５とを位置合わせする。これにより、同図（ａ）に示すように、マスク１の開口パターン４がＴＦＴ基板１５のＲ対応のアノード電極１６Ｒ上に合致することになる。
Next, manufacturing of an organic EL display substrate using the mask 1 of the present invention will be described with reference to FIG. Here, a case where an R (red) organic EL layer is formed will be described.
First, in the first step, as shown in FIG. 8A, the mask 1 is placed on the TFT substrate 15, and the mask side alignment mark 6 formed on the mask 1 and the TFT substrate 15 are formed in advance. While observing the omitted substrate-side alignment mark with a microscope, the mask 1 and the TFT substrate 15 are aligned by adjusting the two marks so as to have a predetermined positional relationship. As a result, the opening pattern 4 of the mask 1 is matched with the R corresponding anode electrode 16R of the TFT substrate 15 as shown in FIG.
第２ステップにおいては、マスク１とＴＦＴ基板１５とを密着させた状態で例えば真空蒸着装置の真空槽内に設置し、図８（ｂ）に示すように、ＴＦＴ基板１５のＲ対応のアノード電極１６Ｒ上にマスク１の開口パターン４を介して正孔注入層、正孔輸送層、Ｒ発光層、電子輸送層等の積層構造となるように順次成膜してＲ有機ＥＬ層１７を蒸着形成する。このとき、Ｇ対応及びＢ対応のアノード電極１６Ｇ，１６Ｂに通電して各アノード電極１６Ｇ，１６Ｂに一定電圧を印加した状態で真空蒸着を行えば、マスク１のフィルム２がＧ対応及びＢ対応のアノード電極１６Ｇ，１６Ｂに静電吸着されて固定されるため、マスク１が動いてマスク１の開口パターン４とＴＦＴ基板１５のＲ対応のアノード電極１６Ｒとの位置ずれが生ずるおそれが無い。また、マスク１のフィルム２がＴＦＴ基板１５面に密着してフィルム２の下面とＴＦＴ基板１５の上面との間に隙間が生じるおそれが無いため、該隙間に蒸着分子が回り込んで付着し薄膜パターンの形成精度を悪くするという問題も回避することができる。 In the second step, the mask 1 and the TFT substrate 15 are placed in close contact with each other, for example, in a vacuum chamber of a vacuum vapor deposition apparatus, and as shown in FIG. The R organic EL layer 17 is deposited on the 16R through the opening pattern 4 of the mask 1 in order to form a stacked structure of a hole injection layer, a hole transport layer, an R light emitting layer, an electron transport layer, and the like. To do. At this time, if the vacuum deposition is performed in a state in which the anode electrodes 16G and 16B for G and B are energized and a constant voltage is applied to each of the anode electrodes 16G and 16B, the film 2 of the mask 1 can be used for G and B. Since it is electrostatically adsorbed and fixed to the anode electrodes 16G and 16B, there is no possibility that the mask 1 moves and a positional shift between the opening pattern 4 of the mask 1 and the R corresponding anode electrode 16R of the TFT substrate 15 occurs. In addition, since the film 2 of the mask 1 is in close contact with the surface of the TFT substrate 15 and there is no possibility of forming a gap between the lower surface of the film 2 and the upper surface of the TFT substrate 15, vapor deposition molecules wrap around and adhere to the gap. The problem of poor pattern formation accuracy can also be avoided.
第３ステップにおいては、図８（ｃ）に示すように、マスク１の縁部を同図に矢印で示すように上方に持ち上げてマスク１をＴＦＴ基板１５面から機械的に剥離する。これにより、Ｒ対応のアノード電極１６Ｒ上にＲ有機ＥＬ層１７が残りＲ有機ＥＬ層１７の形成工程が終了する。この場合、フィルム２の厚みが約１０μｍ〜３０μｍであるのに対してＲ有機ＥＬ層１７の厚みは１００ｎｍ程度であるので、フィルム２の開口パターン４の側壁に付着するＲ有機ＥＬ層１７の厚みは極薄いため、マスク１を剥離する際にフィルム２とＲ対応のアノード電極１６Ｒ上のＲ有機ＥＬ層１７とが容易に分離する。したがって、マスク１を剥離する際にＲ対応のアノード電極１６Ｒ上のＲ有機ＥＬ層１７が剥離するおそれがない。なお、Ｇ対応及びＢ対応のアノード電極１６Ｇ，１６Ｂに電圧を印加させてマスク１をＴＦＴ基板１５面に静電吸着させた場合には、マスク１を剥離する際に、各アノード電極１６Ｇ，１６Ｂの印加電圧をオフするか、又は逆極性の電圧を印加してやるとよい。これにより、マスク１の剥離を容易に行うことができる。 In the third step, as shown in FIG. 8C, the edge of the mask 1 is lifted upward as indicated by an arrow in the drawing to mechanically peel the mask 1 from the surface of the TFT substrate 15. Thereby, the R organic EL layer 17 remains on the R-compatible anode electrode 16R, and the step of forming the R organic EL layer 17 is completed. In this case, since the thickness of the film 2 is about 10 μm to 30 μm and the thickness of the R organic EL layer 17 is about 100 nm, the thickness of the R organic EL layer 17 attached to the side wall of the opening pattern 4 of the film 2. Since the mask 1 is peeled off, the film 2 and the R organic EL layer 17 on the R corresponding anode electrode 16R are easily separated. Therefore, there is no possibility that the R organic EL layer 17 on the R-compatible anode electrode 16R is peeled off when the mask 1 is peeled off. In addition, when a voltage is applied to the anode electrodes 16G and 16B corresponding to G and B and the mask 1 is electrostatically attracted to the surface of the TFT substrate 15, each of the anode electrodes 16G and 16B is removed when the mask 1 is peeled off. The applied voltage may be turned off, or a reverse polarity voltage may be applied. Thereby, peeling of the mask 1 can be performed easily.
以降、上述と同様にして、Ｇ対応及びＢ対応のアノード電極１６Ｇ，１６Ｂ上に対応色の有機ＥＬ層１７を夫々形成する。その後、ＴＦＴ基板１５上にＩＴＯ（Indium Tin Oxide）の透明導電膜を形成し、さらにその上に透明な保護基板を接着して有機ＥＬ表示装置が形成される。 Thereafter, in the same manner as described above, organic EL layers 17 of corresponding colors are formed on the anode electrodes 16G and 16B for G and B, respectively. Thereafter, an ITO (Indium Tin Oxide) transparent conductive film is formed on the TFT substrate 15, and a transparent protective substrate is further adhered thereon to form an organic EL display device.
なお、本発明のマスク１は、有機ＥＬ層１７の形成に限られず、高精細な薄膜パターンを形成しようとするものであれば、液晶表示装置のカラーフィルターの形成、又は半導体基板の配線パターンの形成等、如何なるものにも適用することができる。 Note that the mask 1 of the present invention is not limited to the formation of the organic EL layer 17, but can form a color filter of a liquid crystal display device or a wiring pattern of a semiconductor substrate as long as it is intended to form a high-definition thin film pattern. It can be applied to anything such as formation.
１…マスク
２…フィルム
３…保持部材
４…開口パターン
５…開口部
８…マスク用部材
９…金属膜
１０…ノンフラックス半田
１４…凹部
DESCRIPTION OF SYMBOLS 1 ... Mask 2 ... Film 3 ... Holding member 4 ... Opening pattern 5 ... Opening part 8 ... Member for mask 9 ... Metal film 10 ... Non-flux solder 14 ... Concave part
Claims (8)
可視光を透過する樹脂製のフィルムと、
前記基板上に予め定められた薄膜パターン形成領域に対応して前記薄膜パターンよりも形状の大きい貫通する開口部を形成した板体で構成され、前記フィルムを保持する保持部材と、
を備え、
前記フィルムは、前記基板上の前記薄膜パターン形成領域に対応して前記保持部材の前記開口部内に前記薄膜パターンと同形状の開口パターンを備えていることを特徴とするマスク。 A mask for forming a thin film pattern of a certain shape on a substrate,
A resin film that transmits visible light;
A holding member for holding the film, which is configured by a plate body formed with an opening that penetrates larger than the thin film pattern corresponding to a predetermined thin film pattern forming region on the substrate,
With
The film is provided with an opening pattern having the same shape as the thin film pattern in the opening of the holding member corresponding to the thin film pattern forming region on the substrate.
可視光を透過する樹脂製のフィルムと、
前記基板上に予め定められた薄膜パターン形成領域に対応して前記薄膜パターンよりも形状の大きい貫通する開口部を形成した板体で構成され、前記フィルムを保持する保持部材と、
を備えたことを特徴とするマスク用部材。 A mask member for producing a mask for forming a thin film pattern having a fixed shape on a substrate,
A resin film that transmits visible light;
A holding member for holding the film, which is configured by a plate body formed with an opening that penetrates larger than the thin film pattern corresponding to a predetermined thin film pattern forming region on the substrate,
A mask member comprising:
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