JP2009164020A - Manufacturing device of organic el element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mechanism having a simple constitution, in which thickness of a vapor deposition film can be controlled at high precision over a long time. <P>SOLUTION: A manufacturing device of an organic EL element makes the element substrate for the organic EL element to be deposited with a vapor deposition material consisting of organic materials, and is equipped with a film thickness monitoring part 23 to monitor the film thickness of the vapor deposition material deposited on the element substrate. The film thickness monitoring part 23 has a measuring plate 26 having light-transmissivity, a deposition-preventive plate 27 having a vapor deposition window 30 in order to make vapor deposition materials adhere to some part of this film thickness monitoring part 23, a driving mechanism 28 to support the measuring plate 26 of rotation movably, and a reflectivity measuring instrument 29 to optically measure the thickness of the vapor deposition film adhered to the measuring plate 26 through the vapor deposition window 30. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an apparatus for manufacturing an organic EL element (EL is an abbreviation for electroluminescence), and more particularly to an apparatus for manufacturing an organic EL element used when an organic film is formed by a vacuum deposition method.

  2. Description of the Related Art In recent years, attention has been focused on flat panel display devices using organic EL elements (hereinafter referred to as “organic EL display devices”). The organic EL display device is a self-luminous display device that does not require a backlight, and has an advantage that an image display with a wide viewing angle peculiar to the self-luminous type can be realized. In addition, the organic EL display device is advantageous in comparison with the backlight type (liquid crystal display device etc.) in terms of power consumption because only necessary pixels need to be lit, and is expected to be put into practical use in the future. It is considered to have sufficient response performance for high-definition and high-speed video signals.

An organic EL element used in such an organic EL display device generally has a structure in which an organic layer made of an organic material is sandwiched between electrodes (anode and cathode) from above and below. By applying a positive voltage to the anode and a negative voltage to the cathode, holes are injected from the anode and electrons are injected from the cathode to the organic layer, and they are recombined in the organic layer. It is a mechanism that emits light. At this time, in the organic EL element, luminance of several hundred to several tens of thousands of cd / m ² can be obtained with a driving voltage of 10 V or less. In addition, by appropriately selecting an organic material (fluorescent substance), light emission of a desired color can be obtained. From the above, the organic EL element is very promising as a light emitting element for constituting a multi-color or full-color display device.

  The organic layer of the organic EL element usually has a 3 to 5 layered structure including a hole injection layer, a light emitting layer, an electron transport layer and the like. The organic material forming each layer has low water resistance and cannot use a wet process. For this reason, when forming an organic layer, each layer is formed in order on an element substrate (usually a glass substrate) of an organic EL element by a vacuum vapor deposition method using a vacuum thin film forming technique to obtain a desired laminated structure. . As an apparatus for manufacturing an organic EL element for forming an organic layer, a vacuum evaporation apparatus provided with an evaporation source of an organic material in a vacuum chamber is widely used.

  In a conventional vacuum deposition apparatus, in order to monitor a film thickness deposited on a deposition target substrate, a film thickness meter including a crystal resonator is provided in the vicinity of the deposition target substrate. This type of film thickness meter is called a “crystal oscillation type”. Quartz oscillation type film thickness meter uses the property that the resonance frequency of mechanical vibration is lowered by attaching the molecules of the vapor deposition material to the crystal unit and changing the weight of the entire unit. It is a mechanism that detects the deposited film thickness by reading the change in frequency.

  In addition, an “optical type” is also known as another type of film thickness meter. As an optical film thickness meter, there has been proposed one that obtains the deposition thickness of a material layer by detecting optical absorption intensity, fluorescence intensity, or reflection intensity (see Patent Document 1). In addition, there has also been proposed a method that enables continuous measurement of film thickness using an optical measuring means, a rotating disk for measurement, and a cleaning means for removing organic materials (see Patent Document 2). . Furthermore, a method has been proposed in which the evaporation rate is measured by irradiating the evaporated molecules of the organic material with ultraviolet rays and measuring the fluorescence intensity (see Patent Document 3).

JP 2005-281859 A JP 2003-7462 A JP 2000-294372 A

  However, when measuring the deposited film thickness using a quartz oscillation type film thickness meter, the mechanical vibration of the crystal unit becomes unstable as the amount of deposited material deposited on the substrate to be deposited increases. The period during which the deposited film thickness can be measured is limited. In addition, since the crystal oscillator of the film thickness meter does not suddenly oscillate, the lifetime of the film thickness meter cannot be read accurately, and it is difficult to accurately measure the deposited film thickness over a long period of time.

  On the other hand, as described in Patent Document 1, when calculating the film thickness deposited on the deposition target substrate from the correlation between the absorption intensity and the film thickness, the range in which the correlation can be obtained is about 500 mm. Since it is limited to the range, it is necessary to directly measure the substrate to be deposited. However, since a plurality of organic films are stacked on the substrate to be deposited by the organic EL device structure, the mechanism for preparing the measurement location for each layer on the target substrate for film thickness measurement is complicated. In addition, in order to be able to measure multilayer films and to measure film thicknesses of 500 mm or more, it is necessary to perform calculations taking into account the wavelength spectrum because it uses the characteristics of light absorption and interference, It becomes a complicated algorithm.

  Moreover, as described in Patent Document 2, even if a deposition target for film thickness measurement is separately prepared, it is similarly difficult to measure a thick film. Furthermore, considering the use over a long period of time, a cleaning means for removing the adhered material is required, but the method of performing cleaning in the same vacuum chamber as the evaporation to the evaporation target substrate is applied to the organic material to be evaporated. Problems such as damage and dust on the deposition target substrate occur, which is not preferable.

  Furthermore, as described in Patent Document 3, in the method of measuring the fluorescence intensity by irradiating the evaporated molecules with ultraviolet rays, there is a difficulty in accurately capturing the amount of fluorescent light.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a mechanism that can control the deposition film thickness with high accuracy over a long period of time with a simple configuration. .

An apparatus for manufacturing an organic EL element according to the present invention includes:
An organic EL element manufacturing apparatus comprising a film thickness monitoring unit for depositing a vapor deposition material made of an organic material on an element substrate of an organic EL element and monitoring a film thickness of the vapor deposition material deposited on the element substrate,
The film thickness monitoring unit
A measuring plate having optical transparency;
An adhesion preventing plate having a vapor deposition window for attaching the vapor deposition material to a part of the measurement plate;
Driving means for movably supporting the measurement plate;
And a measuring means for optically measuring the deposited film thickness attached to the measuring plate through the deposition window.

  In the apparatus for manufacturing an organic EL element according to the present invention, the deposited film thickness adhering to a part of the measuring plate is optically measured by the measuring means through the deposition window of the deposition preventing plate. Further, when the measuring plate is moved by the driving means, the position where the vapor deposition material adheres through the vapor deposition window of the deposition preventing plate is changed within the surface of the measurement plate.

  According to the present invention, the vapor deposition film thickness adhered to a part of the measurement plate through the vapor deposition window of the deposition preventive plate is optically measured by the measurement means, and the measurement plate is movably supported by the drive means. With a simple mechanism, the deposited film thickness can be controlled with high accuracy over a long period of time.

  Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings. It should be noted that the technical scope of the present invention is not limited to the embodiments described below, and various modifications and improvements have been made within the scope of deriving specific effects obtained by the constituent requirements of the invention and combinations thereof. Also includes form.

  FIG. 1 is a cross-sectional view showing a configuration example of an organic EL display device to be manufactured in the present invention. The illustrated organic EL display device 1 is configured using a plurality (large number) of organic EL elements 2. The organic EL element 2 is divided for each unit pixel by the difference in emission colors of R (red), G (green), and B (blue). However, FIG. 1 shows only one of them.

  The organic EL element 2 is configured using an element substrate 3. On the element substrate 3, a lower electrode 4, an insulating layer 5, an organic layer 6, and an upper electrode 7 are sequentially laminated together with a switching element (for example, a thin film transistor) (not shown). Further, the upper electrode 7 is covered with a protective layer 8, and a counter substrate 10 is disposed on the protective layer 8 via an adhesive layer 9. The organic EL element 2 has a structure in which an organic layer 6 made of an organic material is sandwiched between a lower electrode 4 and an upper electrode 7.

  The element substrate 3 and the counter substrate 10 are each formed of a light-transmitting substrate (preferably a transparent glass substrate). The element substrate 3 and the counter substrate 10 face each other by sandwiching the lower electrode 4, the insulating layer 5, the organic layer 6, the upper electrode 7, the protective layer 8, and the adhesive layer 9 between the two substrates. Is arranged.

  One of the lower electrode 4 and the upper electrode 7 serves as an anode electrode, and the other serves as a cathode electrode. The lower electrode 4 is made of a highly reflective material when the organic EL display device 1 is a top emission type, and is made of a transparent material when the organic EL display device 1 is a transmissive type.

  Here, as an example, it is assumed that the organic EL display device 1 is a top emission type and the lower electrode 4 is an anode electrode. In this case, the lower electrode 4 is made of, for example, silver (Ag), aluminum (Al), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), tantalum (Ta), tungsten (W), platinum (Pt), and gold (Au), such as a highly reflective conductive material or an alloy thereof.

  When the organic EL display device 1 is a top emission type and the lower electrode 4 is a cathode electrode, the lower electrode 4 is made of, for example, an aluminum (Al), indium (In), magnesium (Mg) -silver (Ag) alloy. , Such as a lithium (Li) -fluorine (F) compound and a lithium-oxygen (O) compound, which are made of a conductive material having a small work function and high light reflectance.

  When the organic EL display device 1 is a transmissive type and the lower electrode 4 is an anode electrode, the lower electrode 4 is, for example, ITO (Indium-Tin-Oxide) or IZO (Indium-Zinc-Oxide). It is composed of a conductive material with high transmittance. When the organic EL display device 1 is a transmissive type and the lower electrode 4 is a cathode electrode, the lower electrode 4 is made of a conductive material having a low work function and high light transmittance.

  The insulating layer 5 is formed on the upper surface of the element substrate 3 so as to cover the peripheral portion of the lower electrode 4. A window is formed in the insulating layer 5 for each unit pixel, and the lower electrode 4 is exposed at the opening of the window. The insulating layer 5 is formed using an organic insulating material such as polyimide or photoresist, or an inorganic insulating material such as silicon oxide.

  For example, as shown in FIG. 2, the organic layer 6 is formed by laminating a hole injection layer 61, a hole transport layer 62, a light emitting layer 63 (63 r, 63 g, 63 b), and an electron transport layer 64 in order from the element substrate 3 side. It has a four-layer laminated structure. However, the number of organic layers 6 is not limited to four, and may be five, for example.

  The hole injection layer 61 is formed of, for example, m-MTDATA [4,4,4-tris (3-methylphenylphenylamino) triphenylamine]. The hole transport layer 62 is formed of, for example, α-NPD [4,4-bis (N-1-naphthyl-N-phenylamino) biphenyl]. Note that the material is not limited to this, and hole transport materials such as a benzidine derivative, a styrylamine derivative, a triphenylmethane derivative, and a hydrazone derivative can be used. Moreover, the hole injection layer 61 and the hole transport layer 62 may each have a laminated structure including a plurality of layers.

  The light emitting layer 63 is formed of a different organic light emitting material for each RGB color component. Specifically, the red light emitting layer 63r includes, for example, 2,6≡bis [(4′≡methoxydiphenylamino) styryl] ≡1,5≡dicyanonaphthalene (BSN) as a dopant material to ADN as a host material. It is composed of a mixture of 30% by weight. The green light emitting layer 63g is composed of, for example, 5% by weight of coumarin 6 as a dopant material mixed with ADN as a host material. For example, the blue light emitting layer 63b is formed by adding 4,4′≡bis [2≡ {4≡ (N, N≡diphenylamino) phenyl} vinyl] biphenyl (DPAVBi) as a dopant material to ADN as a guest material. Consists of a mixture by weight%. The light emitting layers 63r, 63g, and 63b for each color are arranged in a matrix according to the color arrangement of the pixels.

  The electron transport layer 64 is made of, for example, 8≡hydroxyquinoline aluminum (Alq3). The organic layer 6 is not limited to the four-layer structure illustrated here, and may be any layer including at least a light emitting layer. For example, in addition to the above-described four-layer structure (hole injection layer, hole transport layer, light emitting layer, electron transport layer), a five-layer structure including an electron injection layer (not shown) may be used. It may be a structure having a smaller or larger number of layers.

  The upper electrode 7 is made of a transparent or translucent conductive material when the organic EL display device 1 is a top emission type, and is made of a highly reflective material when the organic EL display device 1 is a transmission type. Is done.

  The element substrate 3, the lower electrode 4, the insulating layer 5, the organic layer 6, and the upper electrode 7 constitute the organic EL element 2 (red organic EL element 2r, green organic EL element 2g, blue organic EL element 2b). Yes. In the organic EL display device configured using the organic EL element 2, it is possible to display a color image by selectively generating light of a predetermined wavelength in each of the organic EL elements corresponding to the RGB color components. It becomes possible. In addition, the arrangement of the organic EL elements 2 for displaying a color image can be realized by forming the organic EL elements 21 on a pixel basis by patterning film formation corresponding to each color component of R, G, B, for example. .

  Here, a schematic configuration of a vapor deposition jig used for patterning film formation will be described. As shown in FIG. 3, the evaporation jig is configured using a metal mask 18 and a magnet 19. The metal mask 18 is formed in a flat plate shape using a ferromagnetic material such as iron (Fe) or nickel (Ni). The metal mask 18 is provided with a plurality of openings corresponding to a predetermined film formation pattern. When actually using a vapor deposition jig, a metal mask 18 is brought into close contact with the element substrate 3 so as to cover one surface side of the element substrate (glass substrate) 3 which is a film formation object. A magnet 19 is disposed on the other surface side, and the metal mask 18 is fixed to the element substrate 3 using the magnetic force of the magnet 19. In the vacuum chamber of the vacuum evaporation apparatus, the element substrate 3 is arranged with the metal mask 18 facing the evaporation source (not shown), so that the vapor deposition material is applied to one surface of the element substrate 1 through the opening of the metal mask 18. Adhere. Thereby, the element substrate 3 can be formed with a predetermined film formation pattern corresponding to the opening pattern of the metal mask 18. If a plurality of types of metal masks 18 having different opening patterns are prepared, a multi-layered film having different patterns can be formed, and as a result, a plurality of organic EL elements 2 can be arranged vertically and horizontally.

  Returning to FIG. 1, the protective layer 8 is formed for the purpose of preventing moisture from reaching the upper electrode 7 and the organic layer 6. For this reason, the protective layer 8 is formed with sufficient film thickness using a material with low water permeability and water absorption. Further, since the protective layer 8 needs to transmit light emitted from the organic layer 6 when the organic EL display device 1 is a top emission type, it is made of a material having a light transmittance of about 80%, for example. Composed.

  If the upper electrode 7 is formed of a metal thin film and the insulating protective layer 8 is formed directly on the metal thin film, an inorganic amorphous insulating material, for example, as a material for forming the protective layer 8 is used. Amorphous silicon (α-Si), amorphous silicon carbide (α-SiC), amorphous silicon nitride (α-Si1-xNx), and amorphous carbon (α-C) can be preferably used. Such an inorganic amorphous insulating material does not constitute grains, and therefore has a low water permeability and becomes a good protective layer 8.

  The adhesive layer 9 is formed of, for example, a UV (ultraviolet) curable resin. The adhesive layer 9 is for fixing the counter substrate 10.

  Although illustration is omitted here, when the organic EL display device 1 having such a configuration is provided with a combination of color filters, light emission emitted from the organic EL elements 2r, 2g, and 2b corresponding to each color of RGB. A color filter that transmits only light in the vicinity of the peak wavelength of the spectrum is provided on the light extraction surface side of each color organic EL element 2r, 2g, 2b.

<Configuration of drive circuit>
FIG. 4 is a diagram illustrating a configuration example of a drive circuit of the organic EL display device. The drive circuit of the organic EL display device 1 is formed on the element substrate 3. More specifically, a display area 11 and a peripheral area 12 are set on the element substrate 3. In the display area 11, a plurality of scanning lines 13 and a plurality of signal lines 14 are wired in a matrix form vertically and horizontally. One pixel 15 is provided at each intersection of the scanning line 13 and the signal line 14. Each pixel 15 is provided with a pixel circuit including the organic EL element 2 described above. In the peripheral region 11, a scanning line driving circuit 16 that scans and drives the scanning lines 13 and a signal line driving circuit 17 that supplies a video signal (that is, an input signal) corresponding to luminance information to the signal line 14 are arranged. Yes.

<Configuration of pixel circuit>
FIG. 5 is a diagram illustrating a configuration example of a pixel circuit. The pixel circuit includes, for example, an organic EL element 2, a driving transistor Tr1, a writing transistor (sampling transistor) Tr2, and a storage capacitor Cs. In this pixel circuit, the video signal written from the signal line 14 via the writing transistor Tr2 is held in the holding capacitor Cs by driving the scanning line driving circuit 16, and a current corresponding to the held signal amount is supplied to the driving transistor Tr1. Is supplied to the organic EL element 2, and the organic EL element 2 emits light with a luminance corresponding to the current value.

  Note that the configuration of the pixel circuit as described above is merely an example, and the pixel circuit may be configured by providing a capacitive element in the pixel circuit or further providing a plurality of transistors as necessary. Further, a necessary drive circuit may be added to the peripheral region 12 according to the change of the pixel circuit.

  FIG. 6 is a schematic perspective view showing the configuration of an organic EL element manufacturing apparatus (vacuum deposition apparatus) according to an embodiment of the present invention. The organic EL element manufacturing apparatus shown in the figure forms an organic layer by a vacuum vapor deposition method, and is roughly divided into a vacuum chamber 21, an evaporation source 22, a film thickness monitoring unit 23, and a film thickness control device 24. It is the composition provided with. The vacuum chamber 21 is for forming a low pressure space (vacuum atmosphere) for performing vacuum deposition. The evaporation target substrate 25 placed in the vacuum chamber 21 is arranged in a state of facing the evaporation source 22 and is rotated at a predetermined speed in the direction of the arrow in the figure, and vacuum evaporation is performed during this rotation. ing. In manufacturing the organic EL element, the above-described element substrate 3 is put into the vacuum chamber 21 as the deposition substrate 25.

  The evaporation source 22 is a heating source for evaporating an organic material that is a vapor deposition material (film formation material) in the vacuum vapor deposition method. In the vacuum vapor deposition method, a metal material or the like is used as the vapor deposition material in addition to the organic material. Here, an organic material is used as the vapor deposition material in order to form an organic film on the deposition target substrate 25. In the evaporation source 22, for example, a vapor deposition material (organic material, metal material, or the like) filled in a container called a crucible is evaporated by heating by a heating method such as a resistance heating method, an electron beam heating method, or an induction heating method.

  The film thickness monitoring unit 23 is a part that monitors the film thickness (vapor deposition film thickness) deposited by the deposition of the vapor deposition material evaporated from the evaporation source 22. The film thickness monitoring unit 23 includes a measurement plate 26, a deposition preventing plate 27, a drive mechanism 28, and a reflectance measuring device 29. FIG. 7 is a view of the film thickness monitoring unit 23 as viewed from the front.

  The measurement plate 26 is configured by a circular flat plate having light transmittance, such as a transparent glass plate. The deposition preventing plate 27 is for preventing unnecessary deposition material from adhering to the measurement plate 26 and is disposed so as to cover the front surface of the measurement plate 26. The deposition preventing plate 27 is formed of a square or rectangular flat plate whose one side is longer than the diameter of the measurement plate 26. The deposition preventing plate 27 is provided with a small circular deposition window (opening) 30 at a portion overlapping the measuring plate 26. The vapor deposition window 30 defines a position (deposition position) P at which the vapor deposition material is vapor-deposited in the plane of the measurement plate 26. For this reason, the vapor deposition material evaporated from the evaporation source 22 adheres to a part of the measurement plate 26 (vapor deposition position P) through the vapor deposition window 30 of the deposition preventing plate 27. As shown in FIG. 7, the vapor deposition window 30 has a vertical center among the vertical and horizontal center lines intersecting at the centers of the measurement plate 26 and the deposition preventing plate 27 when the film thickness monitoring unit 23 is viewed from the front. It is arranged on the line. The deposition preventing plate 27 is disposed in the vicinity of the evaporation target substrate 25 in the vicinity of the evaporation target substrate 25. In FIG. 6, the deposition substrate 25 is disposed horizontally, whereas the measurement plate 26 and the deposition plate 27 are disposed in a vertically standing state, but preferably for measurement. It is desirable that the plate 26 and the deposition preventing plate 27 are disposed obliquely above the evaporation source 22 and inclined obliquely so as to face the evaporation source 22.

  The drive mechanism 28 supports the measurement plate 26 so as to be rotatable. The drive mechanism 28 includes a drive motor (not shown) made of, for example, a stepping motor as a drive source for rotating the measurement plate 26. The drive mechanism 28 is provided with a rotating shaft 31. The tip of the rotating shaft 31 is fitted and fixed to the center of the measurement plate 26. For this reason, when the rotation shaft 31 of the drive mechanism 28 is rotated by the drive motor, the measurement plate 26 is rotated integrally with the rotation shaft 31.

  The reflectance measuring device 29 is arranged on the back side of the measurement plate 26 so as to face the measurement plate 26. Specifically, the reflectance measuring device 29 is disposed at a position facing the vapor deposition window 30 of the deposition preventing plate 27 with the measurement plate 26 interposed therebetween. The reflectance measuring instrument 29 has a light emitting portion and a light receiving portion at the leading end of the measuring device facing the opening window 30 of the measuring plate 26 and the adhesion preventing plate 27. The light emitting unit irradiates the measurement plate 26 with light for reflectance measurement, and the light receiving unit receives light irradiated by the light emitting unit and reflected by the measurement plate 26. The light emitting unit is configured by using, for example, a laser element (for example, a semiconductor laser element) that emits laser light perpendicular to the measurement plate 26 as a light source of the reflectance measuring device 29. The light receiving unit is configured by using a light sensing element such as a CCD (Charge Coupled Device) or a photodetector. The reflectance measuring device 29 outputs a detection signal (electric signal) corresponding to the amount of light received by the light receiving unit as a reflectance measurement signal.

  The film thickness controller 24 includes a temperature controller 33, a motor controller 34, and a deposition rate measuring unit 35. The temperature controller 33 controls the heating temperature of the evaporation source 22 (hereinafter referred to as “evaporation source temperature”) based on the measurement result (deposition rate) of the evaporation rate measurement unit 35. The motor control unit 34 controls the rotation of the drive motor of the drive mechanism 28. The deposition rate measuring unit 35 measures the deposition rate (growth film thickness per unit time) based on the reflectance measurement signal output from the reflectance measuring device 29. More specifically, the vapor deposition rate measuring unit 35 calculates the vapor deposition rate of the film deposited on the measurement plate 26 based on the amount of change per hour in the reflectance obtained from the reflectance measuring device 29, and the calculation thereof. By correcting the result based on the positional relationship between the measurement plate 26 and the deposition target substrate 25, the deposition rate of the film deposited on the deposition target substrate 25 is calculated. The calculation result in the vapor deposition rate measuring unit 35 is displayed on a display (not shown) as necessary.

  In the apparatus for manufacturing an organic EL element having the above-described configuration, when an organic material (vapor deposition material) filled in the evaporation source 22 is heated to a predetermined temperature in a state where the deposition substrate 25 is disposed in the vacuum chamber 21, evaporation occurs. The organic material evaporates from the source 22. The evaporated organic material adheres to one surface of the rotating deposition target substrate 25 (a surface facing the evaporation source 22) and also adheres to a part of the measurement plate 26 through the deposition window 30 of the deposition preventing plate 27. During the film formation, the film thickness monitoring unit 23 measures the reflectivity with the reflectometer 29 in order to monitor the vapor deposition film thickness of the organic material adhering to the measurement plate 26 through the vapor deposition window 30 of the deposition preventing plate 27. To do. Further, in the film thickness controller 24, the vapor deposition rate measuring unit 35 calculates the vapor deposition rate based on the measurement result of the reflectance measuring device 29 in the film thickness monitoring unit 23, and the temperature control unit based on the vapor deposition rate calculated there. 33 controls the evaporation source temperature, thereby adjusting the evaporation amount per unit time in the evaporation source 22 and controlling the film thickness deposited on the evaporation target substrate 25 to a desired film thickness. Assuming that the deposition rate is constant, the deposition thickness is determined by a product of the deposition rate and the deposition time. For this reason, if the evaporation source temperature is controlled by the film thickness control device 24 so that the vapor deposition rate is constant, the film thickness to be deposited on the deposition target substrate 25 becomes a desired film thickness using the vapor deposition time as a parameter. Can be controlled.

  Here, how the vapor deposition rate is calculated by the vapor deposition rate measuring unit 35 will be described. In the organic EL element manufacturing apparatus according to the embodiment of the present invention, as a configuration of the reflectance measuring device 29, light is emitted from the light emitting unit 31 to the organic film formed on the measurement plate 26 by the adhesion of the organic material. In addition, the light emitting unit emits light having a single wavelength of 450 nm or more that is not optically affected by absorption. For this reason, the reflectance measured using the reflectance measuring instrument 29 has periodicity only under the influence of film interference. Accordingly, as the organic material adheres and accumulates on the measuring plate 26 and the film thickness increases, the reflectance measured by the reflectance measuring device 29 periodically changes. This periodic change in reflectance can be represented by a cosine wave (cosine wave). Further, the width of one cycle of the reflectance change is defined by the film thickness and varies depending on the wavelength of light used for the reflectance measurement. For example, when the reflectance of an organic film attached to a glass plate is measured using a single wavelength light of 450 nm, a single wavelength light of 550 nm, and a single wavelength light of 700 nm, one cycle of reflectance change is obtained. The width becomes wider as the wavelength of light becomes longer. If such a principle is used, the reflectance can be accurately measured using the reflectance measuring device 29 until a thick film of about 5 μm is formed on the measurement plate 26 due to the adhesion of the organic material. .

  FIG. 8A shows a change in reflectance obtained by using light having a wavelength of 450 nm with respect to a change in film thickness of 0 to 500 nm as an example of the reflectance measurement result, and FIG. As an example of the evaporation source temperature control, the transition of the set temperature based on the evaporation rate is shown. As shown in FIG. 8A, in the process of periodically changing the reflectivity, the region where the change amount of the reflectivity is relatively large with respect to the change of the film thickness (hereinafter referred to as “sensitive region”). ) W1 and a region (hereinafter referred to as “insensitive region”) W2 in which the amount of change in reflectance is relatively small are alternately repeated. The sensitive region W1 is a region in which the reflectance obtained from the reflectance measuring device 29 changes linearly according to the deposited film thickness of the measurement plate 26, and the insensitive region W2 is a reflectance obtained from the reflectance measuring device 29. The rate does not change linearly according to the deposited film thickness of the measuring plate 26, and the change in reflectance is a region where the trend changes from an increasing trend to a decreasing trend, or from a decreasing trend to an increasing trend.

  Among the periodicity of the reflectance change, the insensitive region W2 is defined by a width of ¼ period centering on a stage where the reflectance takes a peak value (0.19 in the illustrated example), and the reflectance is at the bottom. It is defined by a width of ¼ period centering on the stage taking the value (0.08 in the example in the figure), and all other areas are sensitive areas W1. For this reason, when one cycle of the reflectance change from the start of deposition is represented by a cosine curve, the first 1/8 cycle region is the sensitive region W1, the next 1/4 cycle region is the insensitive region W2, and the next 1 cycle. The ¼ period region is the sensitive region W1, the next ¼ cycle region is the insensitive region W2, and the last 領域 cycle region is the sensitive region W1. Therefore, there are three sensitive regions W1 and two insensitive regions W2 within one cycle of the reflectance change represented by the cosine curve. However, since the first 1/8 cycle area and the last 1/8 cycle area are substantially continuous in the repetition period of the reflectance change, it is sensitive to the reflectance change period. The region W1 and the insensitive region W2 are repeated every ¼ period.

  The sensitive area W1 includes areas T1 and T3, and the insensitive area W2 includes areas T2 and T4. Of these, the region T2 is a region that is defined with a width shorter than a quarter period centering on the step where the reflectance takes a peak value, and the region T4 is 1 centering on the step where the reflectance takes a bottom value. This is an area defined by a width shorter than / 4 period. The region T1 is a region defined with a width shorter than a quarter period centering on an intermediate stage from the stage where the reflectance takes a bottom value to the stage where the peak value is taken, and the area T3 has a reflectance of This is an area defined by a width shorter than a quarter cycle centering on an intermediate stage from the stage of taking the peak value to the stage of taking the bottom value. The width of each region T1, T2, T3, T4 is defined by, for example, a width corresponding to 10% of one period. In the region T1 and the region T3, the reflectance change amount per unit time is maximized.

  In the organic EL device manufacturing apparatus according to the embodiment of the present invention, the reflectance is measured by the reflectance measuring instrument 29 using light having a single wavelength of 450 nm or more which is not absorbed by the thin film of the organic material, while vapor deposition is performed. The velocity measuring unit 35 is configured to measure the deposition rate using the measurement result of the reflectance obtained in the sensitive region W1 including the region T1 and the region T3 while avoiding the insensitive region W2 including the region T2 and the region T4. It has become. That is, in the vapor deposition rate measurement unit 35, the amount of change in reflectance obtained in the sensitive region W1 is used for measuring the evaporation rate, and the amount of change in reflectance obtained in the insensitive region W2 is not used for measuring the evaporation rate. In the sensitive region W1 including the region T1 and the region T3, the reflectance change amount per unit time depends on the deposition rate. For this reason, the vapor deposition rate measuring unit 35 can calculate the vapor deposition rate using a correlation formula between the change amount of the reflectance obtained in the sensitive region W1 and the vapor deposition rate.

  In the film thickness control method of the present invention, the purpose is only to calculate the deposition rate, so it is only necessary to focus on the amount of change in reflectivity per unit time. There is no need to find out how many values there are. For this reason, the calculation for obtaining the deposition rate is simplified. Furthermore, since the deposition rate does not take a negative value, when the reflectance decreases as in the above-described region T3, it can be handled by simply inverting the sign of the measured value. In addition, the peak value of the reflectance in the region T2 and the bottom value of the reflectance in the region T4 are theoretically the same value in each period as long as the light emission amount in the reflectance measuring device 29 is the same. . For this reason, if the peak value of the reflectance is measured in the region T2, the bottom value of the reflectance is measured in the region T4, or the peak value and bottom value of the reflectance are measured in the regions T2 and T4, For example, even when there is a change in the amount of light emitted by the reflectance measuring device 29, the reflectance is measured in the regions T1 and T3 based on at least one of the peak value and the bottom value of the reflectance. By correcting the value (absolute value), it is possible to avoid the influence of the change in the light emission amount.

  When a transparent glass substrate is used for the measurement plate 26, the peak value of the reflectance is regulated by the reflectance of the glass substrate and the reflectance of the film formed thereon, but the bottom value of the reflectance is glass. It is defined only by the reflectance of the substrate. For this reason, in correcting the measurement value of the reflectance, it is desirable to use the bottom value of the reflectance obtained in the region T4. Further, the correction of the measured value of the reflectance is, for example, in the sensitive region W1 when the bottom value of the reflectance is decreased from the specified value = 0.08 obtained in the previous experiment to the actually measured value = 0.078. What is necessary is just to multiply the measured value of the obtained reflectance by a coefficient≈1.0256 (0.08 ÷ 0.078). The processing for correcting the measured value of the reflectance may be performed by the vapor deposition rate measuring unit 35 that receives the reflectance measurement signal output from the reflectance measuring device 29.

  In the vapor deposition rate measuring unit 35, the vapor deposition rate of the vapor deposition film deposited on the measurement plate 26 is obtained from the reflectance change amount per unit time obtained from the measurement result of the reflectometer 29 in the sensitive region W1. At the same time, the obtained deposition rate is multiplied by a coefficient set from the relationship between the deposition position of the measurement plate 26 (position of the deposition window 30 of the deposition preventing plate 27) and the deposition position of the deposition target substrate 25. Thus, the vapor deposition rate of the vapor deposition film deposited on the vapor deposition substrate 25 is obtained. In this case, the measurement (calculation) of the vapor deposition rate in the vapor deposition rate measuring unit 35 corresponds to the sensitive region W1 and the insensitive region W2 that appear alternately in a quarter cycle in the periodicity of the reflectance change. It will be performed intermittently at time intervals.

  On the other hand, in the temperature control unit 33, based on the vapor deposition rate obtained by the calculation in the vapor deposition rate measuring unit 35, as shown in FIG. 8B, the evaporation source temperature (the heating set temperature of the evaporation source 22). The amount of the organic material evaporated from the evaporation source 22 is controlled so that the deposition rate is maintained at a constant rate. As described above, the deposition film thickness is intermittently measured, and based on the deposition rate obtained from the measurement result, the technique for controlling the evaporation source temperature so that the deposition rate matches the target deposition rate, It is possible to employ a known method (for example, a method described in Japanese Patent Application Laid-Open No. 2007-39762 that uses a temperature detecting means of the evaporation source in combination).

  In the organic EL element manufacturing apparatus according to the embodiment of the present invention, as an example, when a light source with an emission wavelength of 450 nm is used, one cycle of reflectance change is about 110 nm in terms of film thickness, and the deposition rate is 0.2 nm / In the case of seconds, one cycle of the reflectance change is 550 seconds in terms of time. In addition, the interval from the calculation of the deposition rate from the reflectance change amount measured in the region T1 to the calculation of the deposition rate from the reflectance change amount measured in the region T3 is ½ period, that is, time conversion Is 275 seconds. For this reason, the time frequency with which the deposition rate measuring unit 35 can calculate the deposition rate is once every 275 seconds. In the vacuum deposition method in which the deposition rate changes slowly, the deposition rate measurement result is obtained at sufficient time intervals. Will be obtained.

  Further, as described above, when the “rotary vapor deposition method” in which the vapor deposition substrate 25 is rotated in the vacuum chamber 21 is adopted, the vapor deposition time is adjusted based on the vapor deposition rate measured as described above. Thus, the film thickness deposited on the deposition target substrate 25 can be controlled. In addition, when the “in-line vapor deposition method” is adopted in which the vapor deposition substrate is conveyed so as to pass over a long evaporation source in a line shape, the vapor deposition substrate is measured based on the vapor deposition rate measured as described above. By adjusting the transport speed, the film thickness deposited on the deposition target substrate can be controlled.

  In addition, in the organic EL element manufacturing apparatus according to the embodiment of the present invention, the allowable limit value of the film thickness capable of accurately measuring the reflectance using the reflectance measuring device 29 is experimentally obtained in advance, The required vapor deposition time until the vapor deposition film thickness formed on the measurement plate 26 reaches the allowable limit value is set (understood) in advance as the allowable critical vapor deposition time, and measured from the start of measurement of reflectivity (deposition start). When the vapor deposition time (hereinafter referred to as “actual vapor deposition time”) reaches the allowable limit vapor deposition time, the motor control unit 34 drives the drive motor of the drive mechanism 28, so that the measurement plate 26 has a predetermined angle. It has a mechanism to rotate (pitch feed). The motor control unit 34 determines the actual deposition time and determines whether the actual deposition time has reached the allowable limit deposition time. When it is determined that the actual vapor deposition time has reached the allowable limit vapor deposition time, the motor control unit 34 outputs a drive signal (drive pulse) to the drive motor of the drive mechanism 28, thereby causing the measurement plate 26 to move at a predetermined angle. Just rotate. At this time, the motor control unit 34 rotates the measurement plate 26 by driving the drive mechanism 28 and then resets the actual deposition time to zero, and then restarts the measurement of the actual deposition time.

  The rotation angle of the measurement plate 26 is set so that the portion where the organic material has been deposited (deposition position P shown in FIG. 7) deviates from the position facing the deposition window 30 of the deposition preventing plate 27 (in other words, It is set in such a manner that the portion where the organic material is not deposited in the plane of the measuring plate 26 faces the deposition window 30. For this reason, when the measuring plate 26 is rotated by the drive mechanism 28, the deposition position of the vapor deposition material is changed through the vapor deposition window 30 of the deposition preventing plate 27 within the surface of the measurement plate 26. Therefore, for example, if it is assumed that the rotation angle of the measurement plate 26 is set to 15 °, the motor control unit 34 sets the measurement plate 26 to 15 each time the actual deposition time reaches the allowable deposition time. By rotating each degree, the measurement of the reflectance can be repeated 24 times in total using a new surface of the measurement plate 26. In the reflectance measuring instrument 29, the reflectance can be measured over the allowable limit deposition time using the measurement plate 26 that stops at each rotation angle. As a result, the film thickness monitoring unit 23 can accurately measure the reflectance over a long period of time. For this reason, it will be able to withstand long-time use.

  FIG. 9 is a front view showing the configuration of the film thickness monitoring unit 23 provided in the organic EL element manufacturing apparatus (vacuum deposition apparatus) according to another embodiment of the present invention. In FIG. 9, the measurement plate 26 is provided so as to be rotatable in both the clockwise and counterclockwise directions (arrow directions). Further, three deposition windows 30a, 30b, and 30c are provided on the deposition preventing plate 27 that covers the measurement plate 26. These three vapor deposition windows 30a, 30b, and 30c are formed in a circle with the same size (diameter). Further, the three vapor deposition windows 30a to 30c are arranged next to each other on the same circumference around the rotation center (rotation shaft 31) of the measurement plate 26. In the following description, the deposition window 30a is referred to as a first deposition window 30a, the deposition window 30b is referred to as a second deposition window 30b, and the deposition window 30c is referred to as a third deposition window 30c.

  In the arrangement direction (circumferential direction) of the three vapor deposition windows 30a to 30c, the second vapor deposition window 30b is disposed in the center (middle), and the first vapor deposition window 30a is on one side of the second vapor deposition window 30b. The third deposition window 30c is disposed on the other side of the second deposition window 30b. That is, the second vapor deposition window 30b is provided at a position sandwiched between the first vapor deposition window 30a and the third vapor deposition window 30c. Further, in the arrangement direction (circumferential direction) of the vapor deposition windows 30a to 30c, the arrangement interval between the first vapor deposition window 30a and the second vapor deposition window 30b, and the arrangement of the second vapor deposition window 30b and the third vapor deposition window 30c. The intervals are set equal to each other. The reflectance measuring device 29 is arranged in a state of facing the second vapor deposition window 30b of the deposition preventing plate 27.

  Two shutter members 36 and 37 are provided on the front surface side of the adhesion preventing plate 27 (the side opposite to the measurement plate 26). One shutter member 36 is provided to open and close the first vapor deposition window 30a. The other shutter member 37 is provided to open and close the third vapor deposition window 30c. The first deposition window 30a is opened and closed by moving the shutter member 36 in the left-right direction (arrow direction), and the third deposition window 30c is opened and closed by moving the shutter member 37 in the left-right direction (arrow direction). It is done by letting. The opening / closing operations of the shutter members 36 and 37 are controlled by an opening / closing operation unit (not shown).

  Here, the procedure in the case of measuring the reflectance using the film thickness monitoring unit 23 having the above configuration will be described. First, as an initial state at the start of measurement, as shown in FIG. 10 (A), the first vapor deposition window 30a and the third vapor deposition window 30c are closed by the shutter members 36 and 37 corresponding thereto, respectively. By opening only the second vapor deposition window 30b, the vapor deposition material is attached to the first vapor deposition position P1 of the measurement plate 26 through the second vapor deposition window 30b, and the first vapor deposition position P1 is measured. The reflectance measurement is started by the reflectance measuring device 29.

  Next, as shown in FIG. 10B, the first vapor deposition window 30a and the second vapor deposition window 30b are moved by the movement of the shutter member 36 at a quarter cycle from the start of reflectance measurement (deposition start). Are opened and the third vapor deposition window 30c is closed, so that the first vapor deposition position P1 and the second vapor deposition of the measurement plate 26 are passed through the first vapor deposition window 30a and the second vapor deposition window 30b. The deposition material is attached to the position P2, and the reflectance measurement using the first deposition position P1 as the measurement object is continued by the reflectance measuring device 29. Thereby, in the periodicity of the reflectance change, the step of starting the vapor deposition at the first vapor deposition position P1 and the step of starting the vapor deposition at the second vapor deposition position P2 are shifted by ¼ period. Become.

  Next, as shown in FIG. 10C, the first deposition window 30a is closed by moving the shutter members 36 and 37 at the 3/8 cycle from the start of the reflectance measurement, and the second deposition is performed. The window 30b and the third deposition window 30c are both opened, while the first deposition position P1 faces the second deposition window 30b and the second deposition position P2 faces the third deposition window 30c. When the measurement plate 26 is rotated clockwise, the vapor deposition is performed on the first vapor deposition position P1 and the second vapor deposition position P2 of the measurement plate 26 through the second vapor deposition window 30b and the third vapor deposition window 30c, respectively. While the material is attached, the reflectance measurement device 29 starts measuring the reflectance with the second vapor deposition position P2 as the measurement object. In this case, the rotation operation of the measurement plate 26 is performed in order to switch the reflectance measurement target from the first vapor deposition position P1 to the second vapor deposition position P2.

  Next, as shown in FIG. 10B, the first vapor deposition window 30a and the second vapor deposition window 30b are moved by the movement of the shutter members 36 and 37 at a period of 5/8 from the start of the reflectance measurement. Both are opened and the third vapor deposition window 30c is closed, while the first vapor deposition position P1 faces the first vapor deposition window 30a and the second vapor deposition position P2 faces the second vapor deposition window 30b. By rotating the measurement plate 26 in the counterclockwise direction as described above, the first vapor deposition position P1 and the second vapor deposition position P2 of the measurement plate 26 are passed through the first vapor deposition window 30a and the second vapor deposition window 30b. While depositing the vapor deposition material, the reflectance measurement device 29 starts measuring the reflectance with the first vapor deposition position P1 as the measurement object. In this case, the rotation operation of the measurement plate 26 is performed in order to switch the reflectance measurement object from the second vapor deposition position P2 to the first vapor deposition position P1.

  Thereafter, by repeating the movement of the shutter members 36 and 37 and the rotating operation of the measurement plate 26 every 1/4 cycle, the measurement target of the reflectance within the surface of the measurement plate 26 is set to the first deposition position P1. The reflectance measurement is continued by the reflectance measuring device 29 while alternately switching between the second deposition position P2 and the second deposition position P2. Thereafter, when the film thickness value on the measurement plate 26 reaches an allowable limit value, the measurement plate 26 is rotated by a predetermined angle, thereby using the new surface within the plane of the measurement plate 26. The reflectance is measured in the same procedure.

  By measuring the reflectance by the above procedure, the measurement results as shown in FIGS. 11A and 11B are obtained. FIG. 11A shows the measurement result of the reflectance obtained with the first vapor deposition position P1 as the measurement object, and FIG. 11B shows the measurement result of the reflectance obtained with the second vapor deposition position P2 as the measurement object. Show. As described above, when the reflectivity is measured by switching the measurement target of the reflectivity between the first vapor deposition position P1 and the second vapor deposition position P2 every ¼ period, the measurement is started from the measurement start (deposition start) to 1 / In the stage after the 8th cycle, the first vapor deposition position P1 is avoided while avoiding the insensitive area W2 when the first vapor deposition position P1 is the measurement object and the insensitive area W2 when the second vapor deposition position P2 is the measurement object. The reflectance is measured in the sensitive region W1 when the measurement object is the measurement object and the sensitive region W1 when the second deposition position P2 is the measurement object. Thereby, since the reflectance is measured in the form of mutually compensating for the insensitive area W2, the reflectance measurement signal output from the reflectance measuring instrument 29 is excluding the stage from the measurement start to 1/8 period. All are obtained in the sensitive area W1. Therefore, the vapor deposition rate measuring unit 35 can continuously measure the vapor deposition rate.

  In the other embodiments described above, the film thickness monitoring unit 23 is configured by using one reflectance measuring device 29. However, the present invention is not limited to this, and the film thickness monitoring unit is configured by using a plurality of reflectance measuring devices 29. 23 may be configured.

  FIG. 12 is a schematic diagram showing the configuration of the film thickness monitoring unit 23 using two reflectance measuring devices 29. As shown in the figure, the deposition plate 27 is provided with a first vapor deposition window 30a and a second vapor deposition window 30b. These two vapor deposition windows 30a and 30b are formed in a circular shape with the same size (diameter), and are arranged next to each other on the same circumference around the rotation center of the measurement plate 26.

  Further, a shutter member 38 is provided on the front side of the deposition preventing plate 27 (the side opposite to the measurement plate 26). The shutter member 38 is provided to open and close the first vapor deposition window 30a. The first vapor deposition window 30a is opened and closed by moving the shutter member 38. The opening / closing operation of the shutter member 38 is controlled by an opening / closing operation unit (not shown).

  On the other hand, two reflectance measuring devices 29a and 29b are provided side by side on the back side of the measuring plate 26 (on the side opposite to the deposition preventing plate 27). The first reflectance measuring device 29 a is arranged in a state of facing the first vapor deposition window 30 a of the deposition preventing plate 27, and the second reflectance measuring instrument 29 is a second deposition window 30 b of the deposition preventing plate 27. It is arrange | positioned in the state which opposes.

  Next, a procedure for measuring the reflectance using the film thickness monitoring unit 23 having the above configuration will be described. First, as an initial state at the start of measurement, as shown in FIG. 12A, the second deposition window 30b is closed by a shutter member 38, whereby the measurement plate 26 is passed through the first deposition window 30a. The vapor deposition material is adhered to the first vapor deposition position P1. The first reflectance measuring device 29a starts measuring the reflectance with the first vapor deposition position P1 as a measurement object, and the second reflectance measurement device 29b uses the second vapor deposition position P2 as a measurement object. Measurement of the reflectance is started. However, at this stage, since the first vapor deposition window 30a is opened and the second vapor deposition window 30b is closed by the shutter member 38, the vapor deposition material is deposited at the first vapor deposition position P1, but the second vapor deposition window 30b is closed. No vapor deposition material is deposited at the vapor deposition position P2.

  Next, as shown in FIG. 12B, the first vapor deposition window 30a and the second vapor deposition window 30b are moved by the movement of the shutter member 38 at a quarter cycle from the start of reflectance measurement (deposition start). By opening the two together, the vapor deposition material is attached to the first vapor deposition position P1 and the second vapor deposition position P2 of the measurement plate 26 through the first vapor deposition window 30a and the second vapor deposition window 30b. The first reflectance measuring device 29a continues to measure the reflectance with the first vapor deposition position P1 as a measurement object, and the second reflectance measurement device 29b uses the second vapor deposition position P2 as a measurement object. Continue to measure the reflectivity. At this stage, since both the first vapor deposition window 30a and the second vapor deposition window 30b are opened, the vapor deposition material is deposited at both the first vapor deposition position P1 and the second vapor deposition position P2.

  Thereafter, while the second vapor deposition window 30b is kept open by the shutter member 38, the measurement of the reflectance by the first reflectance measuring device 29a with the first vapor deposition position P1 as the measurement object, and the second vapor deposition position The measurement of the reflectance by the second reflectance measuring device 29b with P2 as the measurement object is continued. Further, when the film thickness value on the measurement plate 26 reaches the allowable limit value, the measurement plate 26 is rotated by a predetermined angle to use the new surface within the surface of the measurement plate 26. The reflectance is measured in the same procedure.

  By measuring the reflectance by the above procedure, the measurement results as shown in FIGS. 13A and 13B are obtained. FIG. 13A shows the measurement result of the reflectance by the first reflectance measuring device 29a obtained using the first deposition position P1 as a measurement object, and FIG. 13B shows the second deposition position P2. The measurement result of the reflectance by the 2nd reflectance measuring device 29b obtained as an object is shown. As described above, when the reflectance is measured by switching the second deposition window 30b from the closed state to the opened state by the movement of the shutter member 38 at a quarter cycle from the start of reflectance measurement (deposition start), The period of the reflectance change measured by the first reflectance measuring instrument 29a and the period of the reflectance change measured by the second reflectance measuring instrument 29b are shifted from each other by ¼ period. For this reason, when the vapor deposition rate is measured by the vapor deposition rate measuring unit 35, the reflectance detection signal output from the first reflectance measuring device 29 a and the second reflectance measuring device 29 b are output. By alternately taking in the detection signal of the reflectance every quarter period, it is possible to fetch only the measurement signal of the reflectance obtained in each sensitive region. Therefore, the vapor deposition rate measuring unit 35 can continuously measure the vapor deposition rate.

  Further, when two reflectance measuring devices 29a and 29b are used, the required number of shutter members can be reduced as compared with the case where one reflectance measuring device 29 is used. Further, when the reflectance of the sensitive region is measured by one reflectance measuring device (for example, the first reflectance measuring device 29a), the other reflectance measuring device (for example, the second reflectance measuring device) is measured. The reflectivity of the insensitive area can be measured with the instrument 29b). For this reason, the measured value (absolute intensity) of the reflectance obtained in the sensitive region can be corrected based on at least one of the peak value and the bottom value of the reflectance measured in the insensitive region.

  On the other hand, when one reflectance measuring device 29 is used, the film thickness monitoring unit 23 can be configured at a lower cost than when two reflectance measuring devices 29a and 29b are used. Further, it is not necessary to correct an error in the measurement result due to individual differences between the reflectance measuring devices.

  The movement of the measurement plate 26 with respect to the deposition preventing plate 27 is not a rotational movement about the rotation shaft 31 but a parallel movement (vertical movement, left / right movement, etc.) in the surface direction of the deposition preventing plate 27. Good. Further, the planar shape of the measurement plate 26 may not be a circle but may be a quadrangle, for example. However, if the measurement plate 26 is rotatably supported by the drive mechanism 28 as in the above embodiment, the measurement plate 26 and the deposition plate when the film thickness monitoring unit 23 is viewed from the front direction. Since the positional relationship of 27 does not change due to the rotational movement of the measuring plate 26, it is suitable for space saving.

  FIG. 14 is a schematic diagram showing a configuration example of an organic EL element manufacturing apparatus (vacuum vapor deposition apparatus) employing an “in-line vapor deposition method”. In this organic EL element manufacturing apparatus, an evaporation source 42, a substrate transfer device 43, a limiting member 44, and a film thickness monitoring unit 45 are provided inside a vacuum chamber 41. The evaporation source 42 is a linear evaporation source that is long in the depth direction in the figure. The substrate transport device 43 transports the deposition target substrate, and includes a transport motor 46 serving as a driving source and a conveyor 47 driven by the rotation of the transport motor 46. The substrate transport device 43 transports the deposition target substrate 48 in the direction of the arrow by the rotation of each roller while supporting the corresponding two sides of the deposition target substrate 48 with a plurality of rollers.

  The limiting member 44 is provided corresponding to the evaporation source 42 in order to limit the scattering range of the vapor deposition material (organic material, metal material, etc.) evaporated from the evaporation source 42. The limiting member 44 includes two limiting plates 44a and 44b arranged on both sides of the evaporation source 42 so as to sandwich the evaporation source 42 in the substrate transport direction. Each of the limiting plates 44a and 44b is arranged so as to sandwich the evaporation source 42 in the substrate transport direction over the entire area of the evaporation source 42 in the line longitudinal direction. One restriction plate 42 a is provided with one or a plurality of openings 49. And the film thickness monitoring part 45 is provided in the outer side of the restriction | limiting board 44a by the correspondence of the opening 49 and 1: 1.

  The film thickness control device 50 adjusts the heating temperature of the evaporation source 42 so as to adjust the evaporation amount per unit time from the evaporation source 42 based on the measurement result in the film thickness monitoring unit 45, so that the evaporation target substrate is adjusted. 48 to control the film thickness to be deposited.

  In this “in-line vapor deposition” organic EL device manufacturing apparatus, the same effect as that of the above-described embodiment can be obtained by applying the configuration of the film thickness monitoring unit 23 described above as the configuration of the film thickness monitoring unit 45. Can do. Moreover, in the said embodiment, although the case where an organic EL element was formed on a plate-shaped glass substrate was described as an example, even if it is a roll-shaped substrate such as a film material made of a resin material, The same can be applied.

<Application example>
The organic EL display device 1 to be manufactured in the present invention includes various electronic devices shown in FIGS. 15 to 19, for example, electronic devices such as a digital camera, a notebook personal computer, a mobile terminal device such as a mobile phone, and a video camera. The present invention can be applied to electronic devices in various fields that display a video signal input to the video signal or a video signal generated in the electronic device as an image or video.

  FIG. 15 is a perspective view showing a television as a first application example. The television according to this application example includes a video display screen unit 101 including a front panel 102, a filter glass 103, and the like, and the organic EL display device 1 can be applied to the video display screen unit 101.

  16A and 16B are diagrams showing a digital camera as a second application example, in which FIG. 16A is a perspective view seen from the front side, and FIG. 16B is a perspective view seen from the back side. The digital camera according to this application example includes a light emitting unit 111 for flash, a display unit 112, a menu switch 113, a shutter button 114, and the like, and the organic EL display device 1 can be applied to the display unit 112.

  FIG. 17 is a perspective view showing a notebook personal computer as a third application example. The notebook personal computer according to this application example includes a main body 121 that includes a keyboard 122 that is operated when characters and the like are input, a display unit 123 that displays an image, and the like. The display unit 123 includes the organic EL display device 1 described above. Is applicable.

  FIG. 18 is a perspective view showing a video camera as a fourth application example. The video camera according to this application example includes a main body 131, a lens 132 for shooting an object on a side facing forward, a start / stop switch 133 at the time of shooting, a display unit 134, and the like. The EL display device 1 can be applied.

  FIG. 19 is a diagram showing a mobile terminal device, for example, a mobile phone, as a fifth application example, where (A) is a front view in an open state, (B) is a side view thereof, and (C) is in a closed state. (D) is a left side view, (E) is a right side view, (F) is a top view, and (G) is a bottom view. The mobile phone according to this application example includes an upper housing 141, a lower housing 142, a connecting portion (here, a hinge portion) 143, a display 144, a sub-display 145, a picture light 146, a camera 147, and the like. In addition, the organic EL display device 1 described above can be applied to the sub display 145.

It is sectional drawing which shows the structural example of the organic electroluminescent display apparatus made into manufacture object by this invention. It is sectional drawing which shows an example of the laminated structure of an organic EL element. It is a figure which shows schematic structure of the jig | tool for vapor deposition. It is a figure which shows the structural example of the drive circuit of an organic electroluminescent display apparatus. It is a figure which shows the structural example of a pixel circuit. It is a schematic perspective view which shows the structure of the manufacturing apparatus (vacuum vapor deposition apparatus) of the organic EL element which concerns on embodiment of this invention. It is the figure which looked at the film thickness monitoring part from the front direction. It is a figure which shows an example of a reflectance measurement result, and an example of evaporation source temperature control. It is a front view which shows the structure of the film thickness monitoring part with which the manufacturing apparatus (vacuum vapor deposition apparatus) of the organic EL element which concerns on other embodiment of this invention is provided. It is a figure explaining the measurement procedure of the reflectance using the film thickness monitoring part which concerns on other embodiment of this invention. It is a figure which shows an example of the reflectance measurement result using one reflectance measuring device. It is the schematic which shows the structure of the film thickness monitoring part using two reflectance measuring devices. It is a figure which shows an example of the reflectance measurement result using two reflectance measuring devices. It is a figure explaining application to the manufacturing apparatus of an in-line vapor deposition system. It is a perspective view which shows the television used as the 1st application example. It is a figure which shows the digital camera used as the 2nd application example. It is a perspective view which shows the notebook personal computer used as the 3rd application example. It is a perspective view which shows the video camera used as the 4th application example. It is a figure which shows the portable terminal device used as the 5th application example.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Organic EL display apparatus, 2 ... Organic EL element, 6 ... Organic film | membrane, 21 ... Vacuum chamber, 22 ... Evaporation source, 23 ... Film thickness monitoring part, 24 ... Film thickness control apparatus, 25 ... Deposition substrate, 26 ... Measuring plate, 27 ... deposition plate, 28 ... drive mechanism, 29 ... reflectance measuring device, 30 ... vapor deposition window, 31 ... rotating shaft, 33 ... temperature control unit, 34 ... motor control unit, 35 ... vapor deposition rate measuring unit

Claims (7)

An organic EL element manufacturing apparatus comprising a film thickness monitoring unit for depositing a vapor deposition material made of an organic material on an element substrate of an organic EL element and monitoring a film thickness of the vapor deposition material deposited on the element substrate,
The film thickness monitoring unit
A measuring plate having optical transparency;
An adhesion preventing plate having a vapor deposition window for attaching the vapor deposition material to a part of the measurement plate;
Driving means for movably supporting the measurement plate;
An organic EL element manufacturing apparatus, comprising: a measuring unit that optically measures a deposited film thickness attached to the measurement plate through the deposition window. The said drive means supports the said board for a measurement so that rotation is possible. The manufacturing apparatus of the organic EL element of Claim 1 characterized by the above-mentioned. The measurement means irradiates the measurement plate with light having a single wavelength and receives light reflected from the measurement plate, thereby having a reflectivity having periodicity with respect to the change in the deposited film thickness. It consists of a reflectance measuring device which outputs a measurement signal. The manufacturing apparatus of the organic EL element of Claim 1 characterized by the above-mentioned. Among the periodicity of the reflectance change obtained by the reflectance measuring instrument, the sensitive region has a relatively large amount of change in the reflectance with respect to the change in the deposited film thickness and the change in the deposited film thickness. 4. A deposition rate measuring means for measuring a deposition rate based on a reflectance measurement signal obtained in the sensitive region among the insensitive regions having a relatively small amount of change in reflectance. The manufacturing apparatus of the organic EL element of description. The measurement plate has a plurality of vapor deposition windows,
A shutter member provided to open and close at least one of the plurality of vapor deposition windows;
Of the plurality of deposition windows, a first stage of starting deposition on the measurement plate through one deposition window and a second stage of starting deposition on the measurement plate through another deposition window, the reflection The organic EL element manufacturing apparatus according to claim 3, further comprising: an opening / closing operation unit that controls an opening / closing operation of the shutter member so as to be shifted by a quarter of the periodicity of the rate change. Based on at least one of the peak value and the bottom value of the reflectance obtained in the insensitive area in the periodicity of the reflectance change, the measured value of the reflectance obtained in the sensitive area. The apparatus for manufacturing an organic EL element according to claim 4, wherein: The reflectance measuring object is measured between the first deposition position where deposition is started in the first stage and the second deposition position where deposition is started in the second stage. The apparatus for manufacturing an organic EL element according to claim 5, wherein the reflectance is measured by switching every quarter cycle.

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